Abstract: A finger sensor assembly may include a circuit board and an integrated circuit (IC) finger sensor grid array package including a grid array on a lower end thereof mounted to the circuit board, and a finger sensing area on an upper end thereof. The finger sensor assembly may further include at least one visible light source carried by the circuit board and a visible light guide optically coupled to the at least one visible light source. The at least one visible light source may at least partially laterally surround the upper end of the IC finger sensor grid array package to provide visual light indications. The IC finger sensor grid array package may also include circuitry for controlling the at least one visible light source.

Abstract: A wafer of integrated circuits may be bonded to a carrier wafer using a layer of bonding material. The thickness of the wafer of integrated circuits may then be reduced using a series of grinding operations. After grinding, backside processing operations may be performed to form scribe channels that separate the die from each other and to form through-wafer vias. The scribe channels may be formed by dry etching and may have rectangular shapes, circular shapes, or other shapes. A pick and place tool may have a heated head. The bonding layer material may be based on a thermoplastic or other material that can be released by application of heat by the heated head of the pick and place tool. The pick and place tool may individually debond each of the integrated circuits from the carrier wafer and may mount the debonded circuits in packages.

Abstract: Disclosed is a method of making solar collector assemblies for photovoltaic conversion. The method comprises providing a mold for receiving encapsulant, the mold having serially arranged, alternating peaks and valleys. A respective PV solar cell is placed into each of a series of the valleys such that the light-receiving surfaces of the PV solar cells face upwards. Uncured encapsulant is delivered into the mold and onto the light-receiving surfaces, and from the light-receiving surfaces to a level at least as high as the peaks so as to form, above the light-receiving surfaces, optical concentrators for concentrating light received by the optical concentrators and directing the light to the light-receiving surfaces. The encapsulant is then cured.

Abstract: A camera module includes: a lens unit including a casing portion and a lens; and a substrate portion on which an image pick-up element is mounted. The camera module is assembled in combination of the lens unit and the substrate portion in an arrangement in which the lens and the image pick-up element are opposed to each other. The substrate portion includes: a first substrate including one of surfaces on which the image pick-up element is mounted; an infrared filter supported on a light receiving face of the image pick-up element; and a second substrate supported on a surface of the infrared filter which is opposed to the lens. The second substrate includes an opening portion disposed in alignment with the infrared filter so as not to intercept an incident light. A circuit component is mounted on the second substrate.

Abstract: The invention relates to a photovoltaic concentration submodule (1) for photovoltaic concentration modules, including solar energy concentrators which are used to capture solar radiation and which comprise Fresnel lenses (15) and secondary optical elements. The inventive submodule is formed by a laminar body (2) comprising a central section and two essentially-perpendicular lateral flanges, such as to define an essentially U-shaped element which is made from aluminium. According to the invention, fixing means are used to fix photovoltaic cells to the central section, which are supplied to each of the concentrators. The aforementioned laminar body (2) serves as a support structure for the concentrators and as a heat-dissipating element for the photovoltaic cells. Moreover, the Fresnel lenses are disposed on a front mount (3) which is joined with the laminar body (2), said lenses being disposed in a row.

Abstract: An optical module includes: an optical semiconductor section including a first lead, a second lead with one end portion opposed to one end portion of the first lead, an optical semiconductor element bonded onto the first lead, and a first molded body in which the optical semiconductor element, the one end portion of the first lead, and the one end portion of the second lead are embedded; and an optical element section including a third lead, a fourth lead with one end portion opposed to one end portion of the third lead, and a second molded body in which the one end portion of the third lead and the one end portion of the fourth lead are embedded and which can change the optical path of at least one of emitted light from the optical semiconductor element and incident light on the optical semiconductor element. The other end portion of the first lead and the other end portion of the second lead protrude from the first molded body in directions opposite to each other.

Abstract: Microelectronic imagers with integrated optical devices and methods for manufacturing imagers. The imagers, for example, typically have an imaging unit including a first substrate and an image sensor on and/or in the first substrate. An embodiment of an optical device includes a stand-off having a compartment configured to contain the image sensor. The stand-off has a coefficient of thermal expansion at least substantially the same as that of the first substrate. The optical device can further include an optics element in alignment with the compartment of the stand-off. The stand-off can be formed by etching a compartment into a silicon wafer or a wafer of another material having a coefficient of thermal expansion at least substantially the same as that of the substrate upon which the image sensor is formed. The optics elements can be formed integrally with the stand-offs or separately attached to a cover supported by the stand-offs.

Abstract: An optical element manufacturing method wherein change in optical characteristics before and after the reflow process is suppressed, while maintaining excellent transmittance as an optical element. The method is applicable to reflow process wherein an optical apparatus, including an electronic component such as a CCD image sensor (11), is mounted on an electronic apparatus. The method is provided with a step of molding a thermosetting resin, and a step of annealing the molded material in vacuum atmosphere or inert gas atmosphere.

Abstract: An image capture unit and its manufacturing method. The image capture unit includes a thinned-down integrated circuit chip having an image sensor on its upper surface side. A wall extends above a peripheral upper surface ring-shaped area, and a lens rests on the high portion of the wall.

Abstract: A solar concentrator including a substantially-transparent optical element, a reflective material disposed on a convex surface of the optical element, an insulator layer on the reflective material, a conductive material that is thermal sprayed onto the insulator layer, and a solar cell mounted in a central region of the convex surface and electrically coupled to the conductive material. The optical element includes a flat surface disposed opposite to the convex surface and a concave surface defined in the flat surface. The convex surface and concave surface are arranged and the reflective material is deposited such that light passing through the flat surface is reflected by the reflective material toward the concave surface, and is re-reflected by the reflective material disposed on the concave surface onto an active surface of the solar cell. Thermal spraying the conductive material may include spraying a molten metal powder onto the insulator layer.

Abstract: A radiation detector module for use in nuclear medical imagers employing radiation transmission or radiopharmaceuticals includes a rigid, optically opaque grid defined around a plurality of scintillator crystals. The grid defines a plurality of cells in which each scintillator crystal is completely disposed within in such a manner that an air layer exists between the scintillator crystal and the walls of the grid. A plurality of photoelectric detectors, each of which is associated with a corresponding scintillator crystal, are optically coupled to corresponding scintillator crystals by an optical coupling layer disposed within the cell.

Abstract: A variety of arrangements and methods relating to solar energy collectors and/or solar receivers are described. In one aspect of the invention, a solar receiver includes a photovoltaic cell and a conductive bar that is mounted on the photovoltaic cell. One or more protective covers are positioned over the conductive bar and the cell. Each of the protective covers includes a top and an opposing bottom surface and a side beveled surface. The top and bottom surfaces of the protective covers are substantially parallel to the face of the photovoltaic cell. The side beveled surface is positioned over the conductive bar and is arranged to reflect incoming sunlight towards a portion of the cell that is not covered by the conductive bar.

Abstract: A solar module includes a substrate member, a plurality of photovoltaic strips arranged in an array configuration overlying the substrate member, and a concentrator structure comprising extruded glass material operably coupled to the plurality of photovoltaic strips. A plurality of elongated convex regions are configured within the concentrator structure. The plurality of elongated convex regions are respectively coupled to the plurality of photovoltaic strips. Each of the plurality of elongated convex regions includes a length and a convex surface region characterized by a radius of curvature, each of the elongated convex regions being configured to have a magnification ranging from about 1.5 to about 5. A coating material rendering the glass self-cleaning overlies the plurality of elongated convex regions.

Abstract: A connector of connecting a light sensor and a substrate is utilized for rotating the light sensor so that the light-receiving direction of the light sensor is parallel with the substrate. When the connector is utilized in an optical touch system, the light sensor can be disposed on the substrate of the optical touch system by means of general manufacturing facilities of flat display panels. Meanwhile, the light-receiving direction of the light sensor is parallel with the substrate of the optical touch system.

Abstract: The present invention relates to a photodiode of an image sensor using a three-dimensional multi-layer substrate, and more particularly, to a method of implementing a buried type photodiode and a structure thereof, and a trench contact method for connecting a photodiode in a multi-layer substrate and a transistor for signal detection.

Abstract: A method for producing a nitride semiconductor laser light source is provided. The nitride semiconductor laser light source has a nitride semiconductor laser chip, a stem for mounting the laser chip thereon, and a cap for covering the laser chip. The laser chip is encapsulated in a sealed container composed of the stem and the cap. The method for producing this nitride semiconductor laser light source has a cleaning step of cleaning the surface of the laser chip, the stem, or the cap. In the cleaning step, the laser chip, the stem, or the cap is exposed with ozone or an excited oxygen atom, or baked by heat. The method also has, after the cleaning step, a capping step of encapsulating the laser chip in the sealed container composed of the stem and the cap. During the capping step, the cleaned surface of the laser chip, the stem, or the cap is kept clean.

Abstract: A wafer-scale array of optical packages and a method for fabricating the same. The wafer-scale array of optical packages includes at least one wafer-scale array of lens structures, including a wafer-scale array of first barrel structures and a wafer-scale array of lenses directly formed on the wafer-scale array of first barrel structures such that the wafer-scale array of lenses is integrally combined with the wafer-scale array of first barrel structures, the wafer-scale array of first barrel structures being made of a material different from a material of the lens of the wafer-scale array of lenses; and at least one wafer-scale array of second barrel structures stacked on and combined with the at least one wafer-scale array of lens structures.

Abstract: An image sensor including an interlayer dielectric layer formed over a semiconductor substrate, a color filter layer formed over the interlayer dielectric layer, a planarization layer formed over the color filter, and a microlens array having a gapless, continuous shape and a multilayered structure formed over the planarization layer.

Abstract: Some embodiments include methods of forming openings in which a metal-containing structure is formed over a region of a semiconductor substrate. A patterned metal-containing material is formed over the metal-containing structure, with the metal-containing material having a gap extending therethrough. An entirety of the metal-containing structure is removed through the gap to leave an opening over the region of the semiconductor substrate. The region of the semiconductor substrate may comprise CMOS sensors, and one or both of filter material and microlens material may be formed within the opening.

Abstract: Image sensor having a large number of image sensor units in an essentially array-like arrangement, the light-sensitive surfaces of the image sensor units being node points at a spacing relative to each other and these, together with the horizontal and vertical connection lines which connect the node points, spanning a two-dimensional network, and the array-like arrangement having a central region and an edge region, the central region and the edge region being connected to each other along at least connection line, characterised in that the spacing respectively of two adjacent node points of the array-like arrangement is different along the at least one connection line in the central region and in the edge region. Furthermore, a camera system with an image sensor according to the invention and an additionally disposed lens system is disclosed.

Abstract: In fabrication of a semiconductor device mounted on a wiring board, a semiconductor circuit portion is formed over a glass substrate. Then, an interposer having connection terminals are bonded to the semiconductor circuit portion. After that, the glass substrate is peeled off from the semiconductor circuit portion, and a mold resin is poured to cover the periphery of the semiconductor circuit portion from a direction of the separation plane. Then, the mold resin is heated under predetermined conditions to be hardened.

Abstract: Various embodiments include interconnects for semiconductor structures that can include a first conductive structure, a second conductive structure and a non-hardening liquid conductive material in contact with the first and second structure. Other embodiments include semiconductor components and imager devices using the interconnects. Further embodiments include methods of forming a semiconductor structure and focusing methods for an imager device.

Abstract: According to one described embodiment, a light emitting device structure includes an epitaxial contact layer disposed on an active region of the light emitting device structure, a multi-layer reflector disposed at least partially on the epitaxial contact layer, and conductive contacts abutting the epitaxial contact layer, the multi-layer reflector enclosing the conductive contacts.

Abstract: A semiconductor device includes a pair of power chips, an IC chip, a plurality of leads one of which having a die pad on which the power chips are mounted and another one having a die attach portion on which the IC chip is mounted, a resin sheet firmly adhered to one side of the die pad, and a resin casing made by molding operation to encapsulate the power chips, the IC chip and the resin sheet by a resin in such a manner that one surface of the resin sheet opposite the die pad is exposed to the exterior of the resin casing. The resin casing has a groove formed in one surface opposite the exposed surface of the resin sheet, the groove extending parallel to the resin sheet and perpendicular to a runner through which the resin was supplied in the molding operation.

Abstract: A vertically-integrated active pixel sensor includes a sensor wafer connected to a support circuit wafer. Inter-wafer connectors or connector wires transfer signals between the sensor wafer and the support circuit wafer. The active pixel sensor can be fabricated by attaching the sensor wafer to a handle wafer using a removable interface layer. Once the sensor wafer is attached to the handle wafer, the sensor wafer is backside thinned to a given thickness. The support circuit wafer is then attached to the sensor wafer and the handle wafer separated from the sensor wafer.

Abstract: A multilayer wiring substrate has a through hole that passes from a first surface through to a second surface. The multilayer wiring substrate includes an electrical connection terminal formed in at least one of an inner edge portion which is a periphery of the through hole, an outer edge portion which is an outer periphery of the substrate, and a non-edge portion, on at least one of the first surface and the second surface. The electrical connection terminal has a castellation structure that does not pass through to a surface opposite to a formation surface.

Abstract: The present disclosure provides an image sensor semiconductor device. The semiconductor device includes a sensor element disposed in a semiconductor substrate; an inter-level dielectric (ILD) disposed on the semiconductor substrate; and a trench disposed in the ILD, overlying and enclosing the sensor element, and filled with a first dielectric material.

Abstract: A portable optical detection chip comprises a substrate, a plurality of avalanche-type photosensitive device modules and a plurality of plane mirrors. The plurality of avalanche-type photosensitive device modules are formed on the substrate, and each of them comprises a plurality of avalanche-type photosensitive devices and a plurality of lenses. Each of the lenses is stacked on one of the avalanche-type photosensitive devices. The plurality of plane mirrors are disposed between the avalanche-type photosensitive device modules. That is, the avalanche-type photosensitive device modules are separated from each other by the plane mirrors.

Abstract: A solar cell includes a solar cell element that converts sunlight concentrated by a concentrating lens into electricity, a receiver substrate on which the solar cell element is placed, and a resin sealing portion that resin-seals the solar cell element. The solar cell further includes a reflecting member that has an irradiation window that is disposed facing the solar cell element and through which sunlight is directed to the solar cell element, a light introducing window that is formed larger than the irradiation window and disposed facing the concentrating lens and through which sunlight is introduced, and a reflecting face that is formed between the irradiation window and the light introducing window and that reflects and guides sunlight toward the solar cell element.

Abstract: A device and method to provide an optical guide of a pixel to guide incoming light onto a photosensor of the pixel and to improve the optical crosstalk immunity of an image sensor. The optical guide consists of an optically reflecting barrier formed as a trench that mitigates against optical crosstalk. The optical guide is made of an air-filled ring of spaced slots. In another embodiment, the optical guide structure can be filled with a low dielectric material with an index of refraction that is less than the index of refraction of the material used for the surrounding layers.

Abstract: A pixel array is provided in which cells are arranged in a matrix. Each cell includes a photodiode, an FD, a transfer transistor, a reset transistor, an amplifying transistor having a gate electrode connected to the FD, a drain connected to a power supply line, and a source connected to a vertical signal line, and an FD wire. The FD wire is provided in a first wiring line, and the vertical signal line is provided in a second wiring line positioned over the first wiring layer. Since the potential of the FD wire follows the potential of the vertical signal line, it is possible to suppress a variation in capacitance occurring in the FD when a position of the vertical signal is shifted, depending on a position of the cell.

Abstract: A method for making lens modules includes the steps of: a) providing a wafer including an array of sensor chips; b) mounting a plurality of lens assemblies on the sensor chips, respectively, thereby defining a plurality of intersecting spacing grooves among the lens assemblies; c) forming substrate layer by filling in the spacing grooves with a resin material; and d) cutting the wafer and the substrate layer along intersecting cutting lines each extending along one of the spacing grooves and each intervening the lens assemblies, the substrate layer being divided into a plurality of barrels respectively surrounding the lens assemblies. A lens module made by the method is also disclosed.

Abstract: The present invention provides a front-illuminated avalanche photodiode (APD) with improved intrinsic responsivity, as well as a method of fabricating such a front-illuminated APD. The front-illuminated APD comprises an APD body of semiconductor material, which includes a substrate and a layer stack disposed on a front surface of the substrate. The layer stack includes an absorption layer, a multiplication layer, and a field-control layer. Advantageously, a back surface of the APD body is mechanically and chemically polished, and a reflector having a reflectance of greater than 90% at the absorption wavelength band is disposed on the back surface of the APD body. Thus, incident light that is not absorbed in a first pass through the absorption layer is reflected by the reflector for a second pass through the absorption layer, increasing the intrinsic responsivity of the front-illuminated APD.

Abstract: An improved photodiode detector shielding apparatus and method are provided which shield a photodiode detector from electromagnetic interference and ambient light, without affecting the wavelengths of light that reach the photodiode. The improved photodiode detector shield has two layers. A bottom layer is substantially made from an electrically conducting material and is fixed over a photodiode in order to shield it from EMI and ambient light. A top layer is substantially made from a lustrous, shiny, reflective material that reflects an equal amount of light across a band of wavelengths. Both layers have areas with optically transmissive openings, which are aligned to allow for the unobstructed passage of light of a band of wavelengths to the photodiode. Light within a band of wavelengths is evenly reflected off the top of the first surface and also reaches the photodiode.

Abstract: A method for manufacturing a laser device includes fixing a laser chip to a holder via a metal having a low melting point by melting the metal at a temperature higher than the melting point, heating the holder to which the laser chip is fixed at a heat treatment temperature that is lower than the melting point and, thereafter, sealing the laser chip by covering the holder to which the laser chip is fixed with a cap. The heating step may be performed in an atmosphere in which ozone is generated or an atmosphere in which oxygen plasma is generated. Furthermore, the holder to which the laser chip is fixed is covered with a cap to make a hermetically sealed package in dry air or an inert gas, and then an ultraviolet ray is irradiated into the package while it is heated.

Abstract: A substrate assembly (100) for a photovoltaic device, the assembly including an array of elongate semiconductor substrates (101), each of the elongate substrates (101) having opposite faces bounded by longitudinal edges, the elongate substrates being electrically interconnected and maintained in a longitudinally parallel arrangement by an electrically conductive material (102) disposed between the opposing longitudinal edges of adjacent ones of said elongate substrates (101) such that the opposite faces of each elongate substrate remain substantially entirely exposed.

Abstract: A light emitting device package and a lighting system are provided. According to one embodiment, a functional substrate; at least one light emitting element bonded onto the functional substrate; and at least one design-in thermal detection unit built onto the functional substrate are provided, wherein the design-in thermal detection unit is proximate to the light emitting element, and wherein the design-in thermal detection unit is configured to detect the temperature and transmit a temperature signal. The design-in thermal detection unit may be an NTC thermistor based on a semiconductor substrate. A control system may be included to detect temperature and make any necessary current adjustments in order to maintain consistent performance of the light emitting element.

Abstract: A semiconductor-based optoelectronic device such as a solar cell has an n-type layer and a p-type layer, together forming a p-n junction. Contact regions are formed on the device, with light-receiving regions between contact regions. A window layer is formed over the n-type layer or the p-type layer at the light-receiving region, the window layer promoting reduced carrier recombination at the surface of the n-type or p-type layer, and/or reflection of minority carriers in the n-type or p-type layer towards the p-n junction. The device has a window protection layer formed over the window layer, the window protection layer providing protection from degradation of the window layer during manufacture and/or operation of the device. For GaAs-based devices the window layer may be Al0.9Ga0.1As and the window protection layer may be GaAs. Additionally, an AlAs etch stop layer may be provided over the window protection layer.

Abstract: An imaging optical module is designed to be placed in front of an optical image sensor of a semiconductor component. The module includes at least one element which has a refractive index that varies between its optical axis and its periphery, over at least an annular part and/or over its central part. The element may be a tablet in front of the semiconductor sensor or a lens in front of the semiconductor sensor. The direction of variation in refractive index may be oppositely oriented with respect to the table and lens.

Abstract: A photosensitizing chip package construction and manufacturing method thereof is comprised of photosensitizing chips constructed on one side of a wafer using a bonding layer; a color attachment array being disposed over those photosensitizing chips; a glass substrate provided with weir and covered up over the color attachment array; a proper gap being defined between the glass substrate and the color attachment array to promote permeability of stream of light by direct receiving stream of light from those photosensitizing chips constructed over the wafer.

Abstract: An image sensor and method of manufacturing thereof are provided. In an embodiment, an image sensor can include a photodiode on a substrate, an interlayer dielectric formed on the substrate, an insulating layer micro-lens on the interlayer dielectric, and an organic micro-lens on the insulating layer micro-lens.

Abstract: A solid state imaging device having a back-illuminated type structure in which a lens is formed on the back side of a silicon layer with a light-receiving sensor portion being formed thereon. Insulating layers are buried into the silicon layer around an image pickup region, with the insulating layer being buried around a contact layer that connects an electrode layer of a pad portion and an interconnection layer of the surface side. A method of manufacturing such a solid-state imaging device is also provided.

Abstract: Embodiments relate to a dual image sensor which includes a first device including a first wafer having a first inclined step, a first reflective face on an inclined plane on the first inclined step, at least one first microlens over a lower end surface adjacent the first inclined step, and a first via-hole filled with metal on an upper end face adjacent the first inclined step. A second device in the dual image sensor includes a second wafer having a second inclined step, a second reflective face on an inclined plane on the second inclined step, and at least one second microlens over a first portion of an upper end face adjacent the second inclined step. A dual image sensor is formed by connecting the metal in the first via-hole and the metal in the second via-hole together. The dual image sensor is capable of imaging light incident from one or both sides as well as light incident in front or rear of the image sensor.

Abstract: A small-sized and low-height camera module is provided. A camera module 100 includes a solid-state imaging device 1 and an imaging lens which is joined so as to have a gap between the lens and the solid-state imaging device 1. The imaging lens is configured to form a refractive index distribution 3 of a concentric circle structure so as to converge light on the image pickup area of the solid-state imaging device 1.

Abstract: A solid-state image pickup apparatus includes: a substrate in which a charge generation portion that generates a signal charge is formed on a surface layer; a layer covering an upper surface of the substrate; a waveguide formed on the layer covering the upper surface of the substrate at a position corresponding to the charge generation portion; a hollow portion formed on the layer covering the upper surface of the substrate at a position on an outer side of the waveguide; and an optically-transparent layer formed on the layer covering the upper surface of the substrate such that at least the hollow portion becomes airtight.

Abstract: An integrally packaged optronic integrated circuit device (310) including an integrated circuit die (322) containing at least one of a radiation emitter and radiation receiver and having top and bottom surfaces formed of electrically insulative and mechanically protective material, at least one of the surfaces (317) being transparent to radiation, and electrically insulative edge surfaces (314) having pads.

Abstract: A method for packaging LED device comprises following steps: (1) A substrate with a cavity is provided; (2) A electrode layer is formed and located on the cavity and the surface of the substrate; (3) A opening through the cavity is formed, whereby a anode and a cathode are separated by the opening; (4) A LED chip is disposed on the bottom of the cavity and the opening, where the led chip is electrically connected to the anode and the cathode; (5) The cavity with the opening is filled with packaging material; (6) The packaging material is hardened, thereby the hardened packaging material with a recess that corresponding to the top of the chip; and (7) The LED device is formed by performing a cutting process along a cutting line in the cavity.

Abstract: An optical element package includes: an optical element in a form of a chip, and a lens resin having a convex lens surface covering an optical functional surface of the optical element. The convex lens surface is formed as a rough surface having a plurality of minute convex curved surfaces having a vertex in a direction perpendicular to a plane in contact with each part of the convex lens surface.

Abstract: An interconnect layer is formed on a lower face of a silicon wafer, a support substrate is adhered over a lower face of the interconnect layer, and a thickness reduction of the silicon wafer is performed from an upper face side. Next, a photodiode is formed in an upper face of the silicon wafer, and a microlens is formed at a position corresponding to the photodiode. An adhesive layer is formed on the silicon wafer in a region not covering the microlens, a low refractive index layer having a lower refractive index than the microlens is formed in a region covering the microlens, and a glass substrate is adhered to the silicon wafer by the adhesive layer. The support substrate is removed from the interconnect layer, and a solder ball is bonded to a lower face of the interconnect layer. Thereafter, a CMOS image sensor is manufactured by dicing the silicon wafer.

Abstract: A semiconductor image sensor includes: a semiconductor imaging element including an imaging area, a peripheral circuit area, and an electrode area; cylindrical electrodes provided on electrode terminals so as to be electrically connected with an external device; and a transparent resin layer provided on the upper surface of the semiconductor imaging element. The upper surface of each cylindrical electrode and the upper surface of the transparent resin layer are substantially of the same height.