Abstract: The present invention embraces a construction unit comprising a light detector and mountable to a carrier, such as a printed circuit card, and where said construction unit is adapted to be includable in a gas sensor-related arrangement. Said construction unit is assigned a plurality of first connection devices, which connection devices are adapted and distributed along a first surface portion of said construction unit for an electric connection facility to second connection devices related to said carrier. Said construction unit is adapted attachable to or placeable in the vicinity of a translucent recess formed in said carrier for the formation of an aperture. An optoelectric sensor is tightly placed against one side surface of said carrier while a first light-generating means is orientable, preferably as an individual unit, at an adapted distance from or along the other and opposite side surface of the carrier.

Abstract: In this method for producing an anti-reflective film, pores are formed on a surface of a polymer molding material to continuously change a refractive index and then reduce reflectance, in which anodic oxidized porous alumina, in which pores having a tapered shape and whose pore diameter continuously changes, are formed by repeating anodic oxidation at about the same formation voltage and pore diameter enlargement treatment, is used as a mold, or a stamper, which is produced by using the anodic oxidized porous aluminum as a mold, is used as a mold.

Abstract: A solar cell module 100 comprises a light reflection member 12 placed on the light receiving surface of a n-type semiconductor substrate 11 and having a light reflecting surface 12A facing the light receiving surface protection member 2. The light reflection member 12 is positioned on an opposite side to the n-side connecting electrode 14n across the n-type semiconductor substrate 11.

Abstract: This present invention discloses a manufacturing method and structure for a wafer level image sensor module with fixed focal length. The method includes the following steps. First, a silicon wafer comprising several image sensor chips having a photosensitive area and a lens module array wafer comprising several wafer level lens modules with fixed focal length are provided. Next, the image sensor chips and the wafer level lens modules are sorted in grades according to the different quality grades. According to the sorting results, each of the wafer level lens modules is assigned to be situated above the image sensor chip that has the same grade. At the same time, each of the wafer level lens modules is directed to face the photosensitive area of each image sensor chip. Finally, in the packaging process, the wafer level lens module is surrounded by an encapsulation material.

Abstract: Methods are disclosed including applying a layer of binder material onto an LED structure. A luminescent solution including an optical material suspended in a solution is atomized using a flow of pressurized gas, and the atomized luminescent solution is sprayed onto the LED structure including the layer of binder material using the flow of pressurized gas.

Abstract: An infrared light detector has a first substrate having a sensor chip thereon that has an exposure surface that can be irradiated with infrared light, the sensor chip converting the incident infrared light into an electrical signal. The infrared light detector also has a second substrate having a window therein that is located adjacent to the exposure surface of the sensor chip, the window masking infrared light of a predetermined wavelength. The size (dimensions) of the window and the distance of the window with respect to the exposure surface are dimensioned to cause infrared light passing through the window to completely strike the exposure area of the sensor chip.

Abstract: Devices and methods for collecting solar energy using photovoltaic material are disclosed.

Abstract: Pixel-level monolithic optical element configurations for uncooled infrared detectors and focal plane arrays in which a monolithically integrated or fabricated optical element may be suspended over a microbolometer pixel membrane structure of an uncooled infrared detector element A monolithic optical element may be, for example, a polarizing or spectral filter element, an optically active filter element, or a microlens element that is structurally attached by an insulating interconnect to the existing metal interconnects such that the installation of the optical element substantially does not impact the thermal mass or thermal time constant of the microbolometer pixel structure, and such that it requires little if any additional device real estate area beyond the area originally consumed by the microbolometer pixel structure interconnects.

Abstract: Optically transitioning pixel-level filtering using a multi-level structure that includes an isolated optically transitioning filter element that is suspended over a corresponding radiation detector element in a one-to-one relationship to provide, for example, one or more features such as spectral detection and/or selective radiation immunity.

Abstract: A photoelectric conversion device according to the present invention has a plurality of photoreceiving portions provided in a substrate, an interlayer film overlying the photoreceiving portion, a large refractive index region which is provided so as to correspond to the photoreceiving portion and has a higher refractive index than the interlayer film, and a layer which is provided in between the photoreceiving portion and the large refractive index region, and has a lower etching rate than the interlayer film, wherein the layer of the lower etching rate is formed so as to cover at least the whole surface of the photoreceiving portion. In addition, the layer of the lower etching rate has a refractive index in between the refractive indices of the large refractive index region and the substrate. Such a configuration can provide the photoelectric conversion device which inhibits the lowering of the sensitivity and the variation of the sensitivity among picture elements.

Abstract: A semiconductor apparatus according to the present invention includes one or a plurality of pairs of a standard pattern and an offset pattern formed therein with respect to the standard pattern as manufacturing information and other information at an information writing position, which is visible from the outside, of each semiconductor chip on a wafer.

Abstract: In a semiconductor device in which a glass substrate is attached to a surface of a semiconductor die with an adhesive layer being interposed therebetween, it is an object to fill a recess portion of an insulation film formed on a photodiode with the adhesive layer without bubbles therein. In a semiconductor die in which an optical semiconductor integrated circuit including a photodiode having a recess portion of an interlayer insulation film in the upper portion, an NPN bipolar transistor, and so on are formed, generally, a light shield film covers a portion except the recess portion region on the photodiode and except a dicing region. In the invention, an opening slit is further formed in the light shield film, extending from the recess portion to the outside of the recess portion, so as to attain the object.

Abstract: Certain example embodiments of this invention relate to patterned glass that can be used as a cylindrical lens array in a concentrated photovoltaic application, and/or methods of making the same. In certain example embodiments, the lens arrays may be used in combination with strip solar cells and/or single-axis tracking systems. That is, in certain example embodiments, lenses in the lens array may be arranged so as to concentrate incident light onto respective strip solar cells, and the entire assembly may be connected to a single-axis tracking system that is programmed to follow the East-West movement of the sun. A low-iron glass may be used in connection with certain example embodiments. Such techniques may advantageously help to reduce cost per watt related, in part, to the potentially reduced amount of semiconductor material to be used for such example embodiments.

Abstract: Solar cell modules for converting solar energy into electrical energy. The modules includes a housing formed from three separate members that are attached together to form an interior space. A top member extends across an open side of the housing and includes one or more lenses. One or more solar cell receivers are positioned within the interior space of the house and are aligned with one or more of the lenses to receive and convert the solar energy into electrical energy.

Abstract: Provided is a solid-state imaging device that realizes sensitivity improvement while maintaining flare prevention effect even when miniaturization of cell is advanced. The solid-state imaging device according to the present invention includes: light receiving units formed on a semiconductor substrate; an antireflection film arranged above the semiconductor substrate, except above the light receiving units; and microlenses arranged above the light receiving units, in which the antireflection film is formed at a position equal to or higher than a position of the microlenses.

Abstract: Protuberances, having vertical and lateral dimensions less than the wavelength range of lights detectable by a photodiode, are formed at an optical interface between two layers having different refractive indices. The protuberances may be formed by employing self-assembling block copolymers that form an array of sublithographic features of a first polymeric block component within a matrix of a second polymeric block component. The pattern of the polymeric block component is transferred into a first optical layer to form an array of nanoscale protuberances. Alternately, conventional lithography may be employed to form protuberances having dimensions less than the wavelength of light. A second optical layer is formed directly on the protuberances of the first optical layer. The interface between the first and second optical layers has a graded refractive index, and provides high transmission of light with little reflection.

Abstract: An image sensor module having a light gathering region and a light non-gathering region includes an image sensor, a light blocking spacer, a lens layer and a fixing shell. The light blocking spacer is disposed on the image sensor and located in the light non-gathering region. The light blocking spacer has a through hole exposing a portion of the image sensor in the light gathering region. The lens layer is disposed on the light blocking spacer and covers the through hole. The lens layer includes a transparent substrate and a lens disposed on the transparent substrate and located in the light gathering region. The fixing shell located in the light non-gathering region wraps the sidewalls of the image sensor, the light blocking spacer and the lens layer continuously. The material of the fixing shell includes a thermosetting material. A method for manufacturing the image sensor module is also provided.

Abstract: A PET scanner (8) includes a ring of detector modules (10) encircling an imaging region (12). Each of the detector modules includes at least one detector pixel (24,34). Each detector pixel includes a scintillator (20, 30) optically coupled to one or more sensor APDs (54) that are biased in a breakdown region in a Geiger mode. The sensor APDs output a pulse in response to the light from the scintillator corresponding to a single incident radiation photon. A reference APD (26, 36) also biased in a break-down down region in a Geiger mode is optically shielded from light and outputs a temperature dependent signal. At least one temperature compensation circuit (40) adjusts a bias voltage applied to the sensor APDs based on the temperature dependent signal.

Abstract: Disclosed is a method for manufacturing a solar cell module in which a wiring substrate having a base material and a wiring formed on the base material, and a plurality of solar cells electrically connected by being placed on the wiring of the wiring substrates are sealed with a sealant, including a first step of placing at least one of the solar cells on the wiring of the wiring substrate, and a second step of sealing the wiring substrate and the solar cells with the sealant, the method including the step of conducting an inspection of the solar cells after the first step and before the second step.

Abstract: The present invention discloses a manufacturing method and structure of a wafer level image sensor module with package structure. The structure of the wafer level image sensor module with package structure includes a semi-finished product, a plurality of solder balls, and an encapsulant. The semi-finished product includes an image sensing chip and a wafer level lens assembly. The encapsulant is disposed on lateral sides of the image sensing chip and the wafer level lens assembly. Also, the manufacturing method includes the steps of: providing a silicon wafer, dicing the silicon wafer, providing a lens assembly wafer, fabricating a plurality of semi-finished products, performing a packaging process, mounting the solder balls, and cutting the encapsulant. Accordingly, the encapsulant encapsulates each of the semi-finished products by being disposed on the lateral sides thereof.

Abstract: The invention relates to a method for producing an infrared radiation sensor, said sensor comprising an infrared photodiode array formed in a first material and a reading circuit formed in a second material, said method comprising the steps of: sticking, through molecular adhesion, a first material side surface onto an optically transparent crystalline material side surface having infrared radiation and a coefficient of thermal expansion similar to that of the second material, give or take 20%; thinning the body of the first material side surface so that the latter is less that 25 ?m; producing infrared-sensitive photodiodes onto the thus-thinned first material side surface; depositing contact ball bearings onto the infrared photodiodes; and mounting the reading circuit onto the first material side surface through flip chip technology.

Abstract: A solar cell module includes a substrate having a thin-film layer patterned in a manner to form with a split window and a solar cell disposed on the substrate. The solar cell includes plurality of material layers and a plurality of split ways corresponding to the material layers. The scope of the split window is constituted by at least one of the split ways.

Abstract: There are provided a circuit board; a semiconductor substrate bonded to a light-incidence-side surface of the circuit board; a photoelectric conversion film stacked on a layer that is disposed on the light incidence side of the semiconductor substrate; an imaging device chip having signal reading means which is formed in a surface portion of the semiconductor substrate, for reading out, as shot image signals, signals corresponding to signal charge amounts detected by the photoelectric conversion film according to incident light quantities; a transparent substrate bonded to a layer that is disposed on the light incidence side of the photoelectric conversion film with a transparent resin adhesive; and bonding wires which connect connection pads formed on a peripheral portion, not covered with the transparent substrate, of the semiconductor substrate to connection terminals on the circuit board.

Abstract: A semiconductor device includes: an insulating base; a semiconductor element provided on the insulating base; a protector provided on the semiconductor element; and a frame provided on a periphery of the insulating base and surrounding the semiconductor element. A region inside the frame is filled with a sealing resin, and at least one groove is provided in an upper corner portion of the frame on the semiconductor element side of the frame.

Abstract: Disclosed is a method for making a silicon quantum dot planar concentrating solar cell. At first, silicon nitride or silicon oxide mixed with silicon quantum dots is provided on a transparent substrate. By piling, there is formed a planar optical waveguide for concentrating sunlit into a small dot cast on a small solar cell.

Abstract: The invention relates to a method of manufacturing a photovoltaic module comprising the following steps: a) assembling a front end part (10) comprising a front cover element and a photovoltaic cell, b) assembling a back end part (12) comprising a back reflector, a junction box and a back cover element, and c) connecting the assembled front end part (10) with the assembled back end part (12). Further, the invention relates to an assembled back end part (12) and to an interlayer foil (14).

Abstract: A process for assembling a camera module is provided. Firstly, a first conductive bump and a second conductive bump are placed on a signal terminal of a substrate and a contact pad of an image sensing chip, respectively. Then, the substrate and the image sensing chip are laminated, so that the first conductive bump and the second conductive bump are combined together and the signal terminal of the substrate and the contact pad of the image sensing chip are electrically connected with each other. Then, an underfill is applied to a region between the substrate and the image sensing chip. Since the two conductive bumps are connected with each other by the assembling process, the quality of the camera module of the present invention is enhanced.

Abstract: Methods of manufacturing an imaging device package are provided. In accordance with an embodiment a sensor die may be coupled to bond pads on a transparent substrate. Electrically conductive paths comprising bond wires are formed through the bond pads from the sensor die to an outer surface of the imaging device package.

Abstract: An imaging device includes a lens (3), an optical filter (5), a semiconductor imaging element (4) having a light receiving section, and a tridimensional substrate (2) on which the semiconductor imaging element (4) and the optical filter (5) are mounted, wherein the tridimensional substrate (2) has an opening (14) corresponding to the light receiving section of the semiconductor imaging element (4), the semiconductor imaging element (4) and the optical filter (5) are located on one side of the opening (14), the lens (3) is located on the other side of the opening (14), and the semiconductor imaging element (4) and the optical filter (5) are fixed to the tridimensional substrate (2) under the condition that the semiconductor imaging element (4) and the optical filter (5) are curved, and have respective centers moved in a direction away from the lens (3).

Abstract: A method of manufacturing an electronic device (10) provides a substrate (20) that has a plastic material and has a metallic coating on one surface. A portion of the metallic coating is etched to form a patterned metallic coating. A particulate material (16) is embedded in at least one surface of the substrate. A layer of thin-film semiconductor material is deposited onto the substrate (20).

Abstract: Protuberances, having vertical and lateral dimensions less than the wavelength range of lights detectable by a photodiode, are formed at an optical interface between two layers having different refractive indices. The protuberances may be formed by employing self-assembling block copolymers that form an array of sublithographic features of a first polymeric block component within a matrix of a second polymeric block component. The pattern of the polymeric block component is transferred into a first optical layer to form an array of nanoscale protuberances. Alternately, conventional lithography may be employed to form protuberances having dimensions less than the wavelength of light. A second optical layer is formed directly on the protuberances of the first optical layer. The interface between the first and second optical layers has a graded refractive index, and provides high transmission of light with little reflection.

Abstract: A package structure of optical devices has a chip, a sealant, a cover, a substrate, a plurality of bonding wires, and a transparent encapsulant. The chip has at least an optical device and a plurality of chip connection pads. The sealant is disposed around the optical elements. The cover is disposed on the sealant. The substrate supports the chip and has a plurality of connection pads. The bonding wires are used for electrically connecting the chip connection pads of the chip to the connection pads of the substrate. The transparent encapsulant is formed over the substrate and the cover, and encapsulates the bonding wires.

Abstract: A solid-state imaging device includes: a solid-state imaging element having a light-receiving area; a transparent member disposed so as to oppose the light-receiving area; a supporting member configured to support the transparent member; a first mark disposed at either an upper surface of the transparent member or an upper surface of the supporting member; and a second mark disposed at an outer side of the light-receiving area, at an upper surface of the solid-state imaging element.

Abstract: The invention relates to the fabrication of thinned substrate image sensors, and notably color image sensors. After the fabrication steps carried out from the front face of a silicon substrate the front face is transferred onto a substrate. The silicon is thinned, and the connection terminals are produced by the rear face. A multiplicity of localized contact holes are opened through the thinning silicon, in the location of a connection terminal. The holes exposing a first conductive layer (24) are formed during the front face steps. Aluminum (42) is deposited on the rear face, in contact with the silicon, with the aluminum penetrating into the openings and coming into contact with the first layer. The aluminum is etched to delimit the connection terminal. Finally, a peripheral trench is opened through the entire thickness of the silicon layer, and this trench completely surrounds the connection terminal.

Abstract: A method of manufacturing a semiconductor device includes: forming a first resin layer on a wafer having a light receiving portion; patterning the first resin layer into a predetermined shape and forming a first resin film on the light receiving portion; dividing the wafer into light receiving elements; mounting the light receiving elements on an upper surface of a lead frame; a sealing step of forming a sealing resin layer around the first resin film; and removing the first resin film such that a portion of the light receiving element is exposed to the outside, and in the sealing step, the upper surface of the first resin film is flush with the upper surface of the sealing resin layer, or the upper surface of the first resin film is higher than the upper surface of the sealing resin layer.

Abstract: A first light-blocking member and a second light-blocking member are adhered to each other by forming a light-transmitting layer having a light-transmitting composition serving as a base material and a light-transmitting filler different in index of refraction from this light-transmitting composition on a front surface of the first light-blocking member. A liquid light curing adhesive is applied to a front surface of the light-transmitting layer. The second light-blocking member is arranged on the front surface of the light-transmitting layer to which the liquid light curing adhesive has been applied. The liquid light curing adhesive is cured by irradiating the light-transmitting layer with light having a prescribed wavelength laterally from a side of the light-transmitting layer so as to adhere the light-transmitting layer and the second light-blocking member to each other.

Abstract: This electrical connection assembly is used for a photovoltaic cell (4) having rear electrical contacts. The assembly comprises at least one spacer-plate (10) of electrically insulating material suitable for having the rear face of the cell bearing against a first side (116) thereof in a position in which the connection terminals (46, 48) of the cell (4) are in register with through orifices (120, 122) in the spacer-plate (10). The assembly also includes at least two ribbons (20) of electrically conductive material arranged on a second side of the spacer-plate (10), opposite from the first side (116), and provided with contact elements (210, 212) suitable for making electrical contact with the connection terminals (46, 48) of the cell (4) through the orifices (120, 122) in the spacer-plate. Electrical contact between the contact elements (210, 212) and the connection terminals (46, 48) is established without soldering, under the effect of a resilient force.

Abstract: A method for fabricating a photoelectric array device with an optical micro lens array (10) using a plurality of photovoltaic dies (12) so a lens (14) is aligned to each die (12) in the array device. A back surface (16) of a lens array substrate (10) is metallized with electrical conducting lines and interconnects (18). Fabricated photovoltaic dies are aligned to an alignment substrate using a fluidic capillary-driven alignment process. The plurality of aligned dies (12) is attached mechanically and electrically to the metallized lens array substrate (10), so the each die (12) aligns with a lens (14) in the lens array substrate (10). The alignment substrate is removed from the dies (12) attached to the lens array substrate (10). A back panel substrate (22) is coupled mechanically and electrically to the plurality of dies (12) attached to the lens array substrate (10).

Abstract: A photovoltaic solar cell including an upper electrode, a layer with light scattering and/or reflection properties, and a lower electrode. The layer with light scattering and/or reflection properties is located between the upper electrode and the lower electrode.

Abstract: A solar cell capable of improving cell efficiency, and a method for manufacturing the same is disclosed, the solar cell comprising a substrate; a first electrode on the substrate; a photoelectric conversion portion on the first electrode; a second electrode on the photoelectric conversion portion; and plural beads on the second electrode.

Abstract: A method of manufacturing a back side illumination image sensor is provided. The method can include forming an ion implantation layer in a front side of a first substrate, forming a photodetector and a readout circuit on the first substrate, forming an interlayer dielectric layer and a metal line on the front side of the first substrate, bonding a second substrate with the front side of the first substrate, removing a lower portion of the first substrate on the basis of the ion implantation layer, performing an annealing process with respect on a back side of the first substrate, and forming a microlens over the photodetector.

Abstract: A system may include a solar cell, a support defining an opening over the solar cell and comprising a retention feature, and an optical element disposed within the opening. The optical element may include a location feature engaged with the retention feature of the support. In some aspects, the optical element includes an upper surface to receive concentrated light and a lower surface through which light passes to the solar cell, and the location feature is disposed between the upper surface and the lower surface. The retention feature may be a lip defining the opening over the solar cell, and/or the location feature may consist of a notch defined by an edge of the optical element.

Abstract: An optical sensor package structure includes a substrate, a metal plate, an optical sensing chip, a plurality of bonding wires and a lens module. The substrate includes a top surface, a bottom surface and a hole penetrating the top surface and the bottom surface. The metal plate covers the hole from the bottom surface of the substrate. The optical sensing chip is received in the hole and mounted on the metal plate. The bonding wires interconnect the optical sensing chip and the top surface of substrate. The lens module is covering on the hole and mounting on the top surface of the substrate to enclose the optical sensing chip and the bonding wires. Because the optical sensing chip is received in the hole of the substrate, the height of the optical sensor package structure can be reduced to adapt to a compact size electrical device.

Abstract: The invention provides a solid-state imaging device and a method of manufacturing a solid-state imaging device capable of reducing a variation in the shape of an in-layer lens and deeply forming a lens portion. Disclosed is a method of manufacturing a solid-state imaging device including a photoelectric conversion unit and a light shielding film. The method includes: forming the light shielding film; forming a first insulating film and performing a reflow process on the first insulating film; etching the first insulating film such that the first insulating film remains only in a side portion of the light shielding film; forming a second insulating film; and forming another insulating film. A lens portion is formed on another insulating film so as to protrude toward the photoelectric conversion unit, and the lens portion has a shape corresponding to the surface shape of the second insulating film.

Abstract: Disclosed herein is a wafer level packaging image sensor module, including a wafer including an image sensor, a circuit portion and a lower electrode on one side thereof, a lens actuator disposed on the lower electrode and made of electroactive polymer, an upper electrode disposed on the lens actuator, and a lens unit disposed on the upper electrode to allow light to be transmitted to the image sensor therethrough. The wafer level packaging image sensor module includes the lens actuator made of electroactive polymer, and thus it enables realization of the autofocusing of the wafer level packaging image sensor module.

Abstract: A lead frame thermoplastic package for a solar cell, and a method of manufacturing the same. The lead frame being either a single-lead frame design or a dual-lead frame design. The single-lead frame design being made up of a single-lead metal frame. The dual-lead frame design being made up of a die pad lead frame, a wire bond lead frame, and being encapsulated in a thermoplastic resin. Optionally, the single lead frame or at least one of the dual-lead frames is coated with a dielectric material. The lead frame providing connections for a semiconductor die, a diode, and the associated electrical connections. The lead frame also providing a large surface area metal pad for cooling, and mounting tabs for securing various optics systems to the package. Optionally, the lead frame is incorporated into a solar cell including the lead frame, a semiconductor die, a diode, an optics system, and an integrated electrical connection system.

Abstract: Hybrid integration of vertical cavity surface emitting lasers (VCSELs) and/or other optical device components with silicon-based integrated circuits. A multitude of individual VCSELs or optical devices are processed on the surface of a compound semiconductor wafer and then transferred to a silicon-based integrated circuit. A specific sacrificial or removable separation layer is employed between the optical components and the mother semiconductor substrate. The transfer of the optical components to a carrier substrate is followed by the elimination of the sacrificial or separation layer and simultaneous removal of the mother substrate. This is followed by the attachment and interconnection of the optical components to the surface of, or embedded within the upper layers of, an integrated circuit, followed by the release of the components from the carrier substrate.

Abstract: A method and device is disclosed for reducing noise in CMOS image sensors. An improved CMOS image sensor includes a light sensing structure surrounded by a support feature section. An active section of the light sensing structure is covered by no more than optically transparent materials. A light blocking portion includes a black light filter layer and an opaque layer covering the support feature section. The light blocking portion may also cover a peripheral portion of the light sensing structure. The method for forming the CMOS image sensors includes using film patterning and etching processes to selectively form the opaque layer where the light blocking portion is desired but not over the active section.

Abstract: A concentrator photovoltaic module (1) according to an embodiment includes a concentrating lens (50) configured to concentrate sunlight (Ls), a photovoltaic cell element (11) configured to convert the concentrated sunlight (Ls) into electricity, a receiver baseboard (20) on which the photovoltaic cell element (11) is mounted, a heat sink (60) configured to dissipate heat coming from the receiver baseboard (20), a module plate (70) to which the heat sink (60) is attached, and an opening (70w) that is formed in the module plate (70) and in which the photovoltaic cell element (11) and the receiver baseboard (20) are provided. The receiver baseboard (20) is fastened to the heat sink (60), and the heat sink (60) is fastened to the module plate (70) around the opening (70w).

Abstract: Example embodiments may provide a camera module including a high-resolution lens member and/or an image sensor chip that may be integrally formed, and a method of fabricating a camera module. Example embodiment camera modules may include a semiconductor package including an image sensor chip. A transparent substrate may include an upper plate portion and/or a supporting portion defined by a cavity under the upper plate portion, and the supporting portion may be attached on the semiconductor package. The upper plate portion may be spaced from the semiconductor package by the supporting portion. A lens member may be attached to the upper plate portion of the transparent substrate. A stop member may be formed on a top side of the transparent substrate and may expose a portion of the lens member.