Abstract: A method for manufacturing a radiation detection apparatus is provided. The method comprising: forming a set of columnar crystals capable of converting radiation into visible light on a base; forming a supporting layer that supports the set of columnar crystals; separating the set of columnar crystals supported by the supporting layer from the base; preparing a sensor panel having a photoelectric conversion unit; and adhering a surface of the set of columnar crystals, that surface having been in contact with the base, to the sensor panel using an adhesive material, such that the set of columnar crystals covers the photoelectric conversion unit.

Abstract: A method for manufacturing a wafer level packaged focal plane array, in accordance with certain embodiments, includes forming a detector wafer, which may include forming detector arrays and read-out circuits. The method may also include forming a lid wafer. Forming the lid wafer may include polishing a surface of a magnetically confined Czochralski (MCZ) wafer, bonding a Czochralski wafer to the MCZ wafer, and forming pockets in the Czochralski wafer. Each pocked may expose a portion of the polished surface of the MCZ wafer. The method may further include bonding the lid wafer and the detector wafer together such that the each detector array and read-out circuit are sealed within a different pocket, thereby forming a plurality of wafer level packaged focal plane arrays. The method may additionally include separating at least one wafer level packaged focal plan array from the plurality of wafer level packaged focal plane arrays.

Abstract: A package structure of solar photovoltaic module and method of manufacturing the same are provided. The package structure of solar photovoltaic module includes a transparent substrate, a backsheet disposed opposite to the transparent substrate, a plurality of solar cells between the transparent substrate and the backsheet, and several encapsulants sandwiched in between the transparent substrate and the backsheet, wherein the encapsulants encapsulate the solar cells. There is at least one embossing interface between the encapsulants, and the encapsulant having the embossing interface is a thermosetting material.

Abstract: A back side illumination image sensor according to an embodiment includes: a photosensitive device and a readout circuit on the front side of a first substrate; an interlayer dielectric layer on the front side of the first substrate; a metal line on the interlayer dielectric layer; a pad having a step on the interlayer dielectric layer; and a second substrate bonded with the front side of the first substrate over the interlayer dielectric layer, metal line, and pad.

Abstract: A method of producing a semiconductor optical sensor element includes the steps of: forming an oxide film on a silicon carbide substrate; forming a gate electrode layer on the oxide film; patterning the gate electrode layer to form a gate electrode; and processing thermally the gate electrode layer or the gate electrode under an oxidation environment. Further, the gate electrode layer or the gate electrode is thermally processed under the oxidation environment at a temperature between 750° C. and 900° C.

Abstract: Provided are a photomask, an image sensor, and a method of manufacturing the image sensor. The image sensor can include photodiode structures, color filters, a planarization layer, and microlenses. The photodiode structures can be disposed on a semiconductor substrate according to unit pixel. The color filters can be disposed on the semiconductor substrate in a matrix arrangement above the photodiode structures. The planarization layer can cover the entire semiconductor substrate and includes cavities in regions of the planarization layer corresponding to boundaries between the color filters. The cavities may be arranged at boundaries between unit pixels. The microlenses can be disposed on the planarization layer such that portions of the microlenses are arranged in the cavities of the planarization layer.

Abstract: A method for manufacturing a solid-state imaging device including: forming photo sensor portions in a silicon substrate; forming a wiring portion above said silicon substrate; bonding another substrate onto said wiring portion; removing said substrate in response to performing the bonding of the another substrate onto the wiring portion; and sequentially forming an anti-reflective coating on the silicon substrate, a color filter on the anti-reflective coating, and an on-chip lens.

Abstract: The present invention relates to a composite system for photovoltaic (PV) modules. The composite system consists of a carrier foil, a metal foil applied onto the carrier foil, and an insulating layer applied onto the metal foil. Using different connecting techniques, different photovoltaic (PV) cells can be fastened to the composite system and electrically interconnected thereby. In addition, the invention relates to a method for producing the composite system for PV modules, and to the use of the composite system for the back side contacting of wafer cells that have both contacts on the same side and that are placed, with the contacts, onto conductor structures that interconnect them into a module, and to the use of the composite system for modules of internally interconnected thin-film cells.

Abstract: The internal propagation of radiation between a radiation source and radiation detector mounted within a sensor package is prevented by the use of an optical isolator. The optical isolator is formed by the combination of a baffle mounted between the source and detector and a groove formed in an upper surface of the sensor package between the source and detector. A bottom of the groove is positioned adjacent to an upper edge of the baffle.

Abstract: A solid-state imaging device according to an embodiment includes: a plurality of pixels arranged on a first face of a first semiconductor layer, each of the pixels including a photoelectric conversion element converting light entering through a second face of the first semiconductor layer on the opposite side from the first face into a signal charge, the photoelectric conversion element having a pn junction formed with a first semiconductor region formed on the first face and a second semiconductor region formed on a surface of the first semiconductor region; pixel separating regions separating the pixels from one another and formed between the pixels, each of the pixel separating regions including a second semiconductor layer covering faces in contact with the photoelectric conversion elements, and an insulating film with a lower refractive index than a refractive index of the second semiconductor layer to cover the second semiconductor layer.

Abstract: A method is provided for producing an electro-optic device having at least one optically transparent conducting layer with low electrical resistance. The method includes providing a composite substrate that includes an optically transparent and electrically insulating base substrate and an electrically conducting grid disposed in grooves located in the base substrate. Also provided is an electro-optical module having at least one transparent conducting layer. The composite substrate is attached onto the electro-optic module such that electrical contact is established between the grid and the transparent conducting layer of the electro-optic module.

Abstract: An electronics module has a wavy substrate having ridges and creases, and an array of functional components on the substrate, the functional components including solar components and arranged on the substrate so at least one of the components lies between the creases. A method of manufacturing an electronics module includes providing functional components, at least one of the functional components being a portion of a solar cell, mounting the functional components on a flexible substrate, and forming creases and ridges in the flexible substrate, such that the functional components are arranged to reside between the creases.

Abstract: An imaging device package includes: an imaging device chip; a substrate on which the imaging device chip is mounted; a wire that electrically connects the imaging device chip and the substrate at a peripheral edge of the substrate around the imaging device chip; a supporting body that supports an optical member with respect to the substrate; and a bonding section that bonds the supporting body to the substrate while sealing the wire and a bonding terminal of the wire at the peripheral edge of the substrate.

Abstract: An optical sensor package structure includes a substrate, a metal plate, an optical sensing chip, a plurality of bonding wires and a lens module. The substrate includes a top surface, a bottom surface and a hole penetrating the top surface and the bottom surface. The metal plate covers the hole from the bottom surface of the substrate. The optical sensing chip is received in the hole and mounted on the metal plate. The bonding wires interconnect the optical sensing chip and the top surface of substrate. The lens module is covering on the hole and mounting on the top surface of the substrate to enclose the optical sensing chip and the bonding wires. Because the optical sensing chip is received in the hole of the substrate, the height of the optical sensor package structure can be reduced to adapt to a compact size electrical device.

Abstract: The invention pertains to a new type of standing wave filter in which the detector is located within the cavity, rather than outside the cavity and methods of manufacturing such a filter.

Abstract: A package structure of a concentrated photovoltaic cell includes a ceramic baseplate whereon a cavity is formed, the cavity having two opposite internal walls respectively having staircase structures, each having an upper step and a lower step; a photovoltaic chip disposed on a bottom surface of the cavity; a first electrode circuit penetrating the ceramic baseplate and with a top end electrically connected to the photovoltaic chip; a second electrode circuit penetrating the lower steps on the two sides of the ceramic baseplate and connecting with the photovoltaic cell through bonded wires; and a transparent cover disposed on the upper steps for covering the cavity and the photovoltaic chip. A fabrication method for the aforementioned package structure is also provided. The aforementioned package structure has the advantages of being more efficient in heat dissipation and effective in protecting the photovoltaic chip.

Abstract: A wafer stack that is diced to produce a multitude of micro-optoelectronic devices includes a first wafer including a semiconductor material; a second wafer including an optically transparent material; a multitude of light sensor arrangements in the semiconductor material of the first wafer for each of the micro-optical devices; the second wafer structured to form a multitude of micro-optical elements therein for each of the micro-optoelectronic devices; and a wafer stack produced wafer bonding, the wafer stack including the first wafer and the second wafer arranged above same, each of the micro-optical elements arranged and structured such that different portions of light incident on the micro-optical element are directed onto different light sensor elements of a light sensor arrangement at least partly arranged below the micro-optical element.

Abstract: In a method of manufacturing a solar cell, an emitter layer is formed on a front surface of a substrate, a rear surface protective layer is formed on the emitter layer, and a plurality of recesses is formed in the rear surface protective layer. Then, a front electrode is formed on the emitter layer, and a rear surface electrode layer is formed on the rear surface protective layer. A substrate is heated to form a rear surface electric field layer. Since a portion of the rear surface protective layer is removed when the recesses are formed, the substrate may be prevented from being damaged, and thus photoelectric conversion efficiency of the solar cell may be improved.

Abstract: Image sensing devices and methods for fabricating the same are provided. An exemplary image sensing device comprises a first substrate having a first side and a second side opposing each other. A plurality of image sensing elements is formed in the first substrate at the first side. A conductive via is formed through the first substrate, having a first surface exposed by the first substrate at the first side and a second surface exposed by the first substrate at the second side. A conductive pad overlies the conductive via at the first side and is electrically connecting the image sensing elements. A conductive layer overlies the conductive via at the second side and electrically connects with the conductive pad. A conductive bump is formed over a portion of the conductive layer. A second substrate is bonded with the first substrate at the first side.

Abstract: An image sensing device for receiving an incident light having an incident angle and photo signals formed thereby is provided. The image sensing device includes a micro prism and a micro lens for adjusting the incident angle and converging the incident light, respectively, a photo sensor for converting the photo signals into electronic signals, and an IC stacking layer for processing the electronic signals.

Abstract: An image sensor unit includes a fixed substrate, a movable substrate, an actuate section including an actuator for moving the movable substrate against the fixed substrate, an image sensor having an imaging surface on a front surface of the image sensor, and at least, a part of a rear surface of the image sensor being directly fixed onto the movable substrate, an external electrical connecting member for conducting a transmission and reception of signals between the actuate section and the image sensor and an outside of the image sensor unit, and an internal electrical connecting member electrically connects the actuate section, the image sensor and the external connection wiring, wherein the actuate section, the image sensor, the internal connection wiring and a part of the external connection wiring are sealed into the same space.

Abstract: In a solid-state image pick up device, a first conduction type semiconductor layer which has a first surface side. A second surface side which is located the opposite side of the first surface side and an image sensor area. A photo-conversion area which is configured in the first surface side and charges electron by photoelectric conversion. A first diffusion area of second conduction type for isolation, wherein the first diffusion area surrounds the photo-conversion area and extends from the first surface side to the middle part of the semiconductor layer and a second diffusion area of second conduction type for isolation, wherein the second diffusion area extends from the second surface side to the bottom of the first diffusion layer.

Abstract: A method for forming an image sensor chip package includes: providing a substrate having predetermined scribe lines defined thereon, wherein the predetermined scribe lines define device regions and each of the device regions has at least a device formed therein; disposing a support substrate on a first surface of the substrate; forming at least a spacer layer between the support substrate and the substrate, wherein the spacer layer covers the predetermined scribe lines; forming a package layer on a second surface of the substrate; forming conducting structures on the second surface of the substrate, wherein the conducting structures are electrically connected to the corresponding device in corresponding one of the device regions, respectively; and dicing along the predetermined scribe lines such that the support substrate is removed from the substrate and the substrate is separated into a plurality of individual image sensor chip packages.

Abstract: A method for making an optical device with integrated optoelectronic components, including a) making a protective structure including a support in which at least one blind hole is made, an optical element being positioned in the blind hole, b) attaching the support to a substrate including the integrated optoelectronic components, the blind hole forming a cavity in which the optical element faces one of the optoelectronic components, c) achieving thinning of the substrate and making electric connections through the substrate, and d) making an aperture through the bottom wall of the blind hole, uncovering at least one portion of the optical field of the optical element.

Abstract: A backside illuminated image sensor comprises a sensor layer having a plurality of photosensitive elements of a pixel array, an oxide layer adjacent a backside surface of the sensor layer, and at least one dielectric layer adjacent a frontside surface of the sensor layer. A color filter array is formed on a backside surface of the oxide layer, and a transparent cover is attached to the backside surface of the oxide layer overlying the color filter array. Redistribution metal conductors are in electrical contact with respective bond pad conductors through respective openings in the dielectric layer. A redistribution passivation layer is formed over the redistribution metal conductors, and contact metallizations are in electrical contact with respective ones of the respective redistribution metal conductors through respective openings in the redistribution passivation layer. The image sensor may be implemented in a digital camera or other type of digital imaging device.

Abstract: An imaging system includes a macro organic photodiode array with rows and columns of printed photodiodes. The array may be bendable for easy manufacture and assembly on a curved support within an imaging system. Two or more layers of photodiodes may be provided for use in a spectral CT imaging system or as slices.

Abstract: According to one aspect of the present invention, a film for a resin spacer (10) comprises an adhesive layer (12) made of a resin composition and a cover film (14) covering a surface of the adhesive layer (12). In the above-described film for a resin spacer (10), an adhesion force C1 between the adhesive layer (12) and the cover film (14) and an adhesion force D between the adhesive layer (12) and a silicone resin are set so as to satisfy the condition C1>D. Consequently, it is possible to reduce resin adherence to a cutting table at the time of cutting the film for a resin spacer (10).

Abstract: Nanoscale high-aspect-ratio metallic structures and methods are presented. Such structures may form transparent electrode to enhance the performance of solar cells and light-emitting diodes. These structures can be used as infrared control filters because they reflect high amounts of infrared radiation. A grating structure of polymeric bars affixed to a transparent substrate is used. The sides of the bars are coated with metal forming nanowires. Electrodes may be configured to couple to a subset of the rails forming interdigitated electrodes. Encapsulation is used to improve transparency and transparency at high angles. The structure may be inverted to facilitate fabrication of a solar cell or other device on the back-side of the structure. Multiple layered electrodes having an active layer sandwiched between two conductive layers may be used. Layered electro-active layers may be used to form a smart window where the structure is encapsulated between glass to modify the incoming light.

Abstract: The invention provides a solar package structure and a method for fabricating the same. A solar package structure includes a carrier wafer. A conductive pattern layer is disposed on the carrier wafer. A solar cell chip array is disposed on the conductive pattern layer, wherein the solar cell chip array electrically connects to the conductive pattern layer. A first spacer dam is disposed on the carrier wafer, surrounding the solar cell chip array. A first optical element array is disposed over the carrier wafer to concentrate sunbeams onto the solar cell chip array, wherein the first optical element array is spaced apart from the carrier wafer by the first spacer dam.

Abstract: Method for producing back contacts on silicon solar cells and an interconnection between silicon solar cells where the front surface has been fully treated and the back surface has been processed to the point where the said solar cells can be contacted on the back surface. The method further includes: a) attaching the solar cells onto a transparent superstrate, thereby forming a structure, b) depositing a passivating layer onto the back surface of the structure, c) depositing a silicon material layer onto the back surface of the structure, d) separating the silicon material layer by first areas, e) providing contact sites in areas, f) depositing a metal layer onto the back surface of the structure, g) heating the structure to form silicide, h) optionally opening the metal layer in areas, and i) depositing metal onto the silicide. Device includes solar cells with back contacts and interconnections produced by the method.

Abstract: An optimized color filter array is formed in, above or below one or more damascene layers. The color filter array includes filter regions which are configured to optimize the combined optical properties of the layers of the device to maximize the intensity of the particular wavelength of light incident to a respective underlying photodiode.

Abstract: A method of formation of nanowires at a surface of a substrate attached to a solid immersion lens. The method includes formation of a catalyst element at the surface of the substrate and growth of nanowires from the catalyst element formed at the surface of the substrate. The catalyst element is a metal nanoparticle and the formation of the catalyst element at the surface of the substrate deposits the metal nanoparticle using a light beam focused by the solid immersion lens at the surface of the substrate.

Abstract: A semiconductor device includes a plurality of semiconductor integrated circuits bonded to a structure body in which a fibrous body is impregnated with an organic resin. The plurality of semiconductor integrated circuits are provided at openings formed in the structure body and each include a photoelectric conversion element, a light-transmitting substrate which has stepped sides and in which the width of the projected section on a first surface side is smaller than that of a second surface, a semiconductor integrated circuit portion provided on the second surface of the light-transmitting substrate, and a chromatic color light-transmitting resin layer which covers the first surface and part of side surfaces of the light-transmitting substrate. The plurality of semiconductor integrated circuits include the chromatic color light-transmitting resin layers of different colors.

Abstract: An image sensor with an enlarged outward appearance of a microlens and a method for fabricating the same are provided. The image sensor includes: a plurality of microlenses formed on a semiconductor substrate with a certain spacing distance; and a protection layer formed over the microlenses, wherein the protection layer includes a first oxide layer which is formed by a plasma enhanced chemical vapor deposition (PECVD) method and a second oxide layer which is formed by a spin on glass (SOG) method over the first oxide layer to maintain sufficient step coverage over chasms between the microlenses.

Abstract: An asymmetric compound parabolic concentrator (ACPC) coupled with a photovoltaic cell is disclosed according to some embodiments. The disclosed ACPC can concentrate solar light from a large full acceptance angle toward the photovoltaic cell. In some embodiments, the ACPC can be submerged within a liquid (e.g., water). The liquid can increase the full acceptance angle, provide temperature damping, and provide structural inertia to the system. In some embodiments, the ACPC can be constructed from acrylic or other resins.

Abstract: In this method for producing an anti-reflective film, pores are formed on a surface of a polymer molding material to continuously change a refractive index and then reduce reflectance, in which anodic oxidized porous alumina, in which pores having a tapered shape and whose pore diameter continuously changes, are formed by repeating anodic oxidation at about the same formation voltage and pore diameter enlargement treatment, is used as a mold, or a stamper, which is produced by using the anodic oxidized porous aluminum as a mold, is used as a mold.

Abstract: A method of manufacturing a solid state image pickup device including photoelectric conversion elements which are two-dimensionally arranged in a semiconductor substrate, and a color filter having a plurality of color filter patterns differing in color from each other and disposed on a surface of the semiconductor substrate according to the photoelectric conversion elements. The method including the steps of successively subjecting a plurality of filter layers differing in color from each other to a patterning process to form the plurality of color filter patterns. At least one color filter pattern to be formed at first among the plurality of color filter patterns is formed by means of dry etching, and the rest of the plurality of the color filter pattern is formed by means of photolithography.

Abstract: In a package process of backside illumination image sensor, a wafer including a plurality of pads is provided. A first carrier is processed to form a plurality of blind vias therein. The first carrier is adhered to the wafer so that the blind vias face to the pads correspondingly. A spacing layer is formed and a plurality of sensing components are disposed. A second carrier is adhered on the spacing layer. Subsequently, a carrier thinning process is performed so that the blind vias become the through holes. An insulating layer is formed on the first carrier. An electrically conductive layer is formed on the insulating layer and filled in the though holes to electrically connect to the pads. The package process can achieve the exact alignment of the through holes and the pads, thereby increasing the package efficiency and improving the package quality.

Abstract: A solid-state image pickup device includes: a light-transmitting substrate including a terminal electrode for external connection, an inside electrode for bonding a solid-state image pickup element, and a trace that connects the terminal electrode to the corresponding inside electrode; and the solid-state image pickup element which is placed such that a light receiving area opposes the light-transmitting substrate and which is connected to the inside electrode. The trace is made of a light-transmitting conductive film at least in a region opposing the light receiving area of the solid-state image pickup element.

Abstract: A manufacturing method for molding an image sensor package structure and the image sensor package structure thereof are disclosed. The manufacturing method includes following steps of providing a half-finished image sensor for packaging, arranging a dam on the peripheral of a transparent lid of the half-finished image sensor, positioning the half-finished image sensor within a mold, and injecting a mold compound into the mold cavity of the mold. The dam is arranged on the top surface of the transparent lid and the inner surface of the mold can exactly contact with the top surface of dam so that the mold compound injected into the mold cavity is prevented from overflowing to the transparent lid by the dam. Furthermore, the arrangement of the dam and the mold compound can increase packaged areas and extend blockage to invasive moisture so as to enhance the reliability of the image sensor package structure.

Abstract: A method for forming a semiconductor structure having a transistor region and an optical device region includes forming a transistor in and on a first semiconductor layer of the semiconductor structure, wherein the first semiconductor layer is over a first insulating layer, the first insulating layer is over a second semiconductor layer, and the second semiconductor layer is over a second insulating layer, wherein a gate dielectric of the transistor is in physical contact with a top surface of the first semiconductor layer, and wherein the transistor is formed in the transistor region of the semiconductor structure. The method also includes forming a waveguide device in the optical device region, wherein forming the waveguide device includes exposing a portion of the second semiconductor layer in the optical device region; and epitaxially growing a third semiconductor layer over the exposed portion of the second semiconductor layer.

Abstract: The invention, in various exemplary embodiments, incorporates a photonic crystal lens element into an image sensor. The photonic crystal lens element comprises a substrate and a plurality of pillars forming a photonic crystal structure over the substrate. The pillars are spaced apart from each other. Each pillar has a height and a horizontal cross sectional shape. A material with a different dielectric constant than the pillars is provided within the spacing between the pillars. The photonic crystal element can be a lens configured to focus electromagnetic radiation onto an underlying pixel cell.

Abstract: Embodiments of the invention provide a thin single crystalline silicon film solar cell and methods of forming the same. The method includes forming a thin single crystalline silicon layer on a silicon growth substrate, followed by forming front or rear solar cell structures on and/or in the thin single crystalline silicon film. The method also includes attaching the thin single crystalline silicon film to a mechanical carrier and then separating the growth substrate from the thin single crystalline silicon film along a cleavage plane formed between the growth substrate and the thin single crystalline silicon film. Front or rear solar cell structures are then formed on and/or in the thin single crystalline silicon film opposite the mechanical carrier to complete formation of the solar cell.

Abstract: Techniques and architectures for providing a reflective target area of an integrated circuit die assembly. In an embodiment, a reflective bevel surface of a die allows an optical signal to be received from the direction of a side surface of a die assembly for reflection into a photodetector. In another embodiment, one or more grooves in a coupling surface of the die provide respective leverage points for aligning a target area of the bevel surface with a detecting surface of the photodetector.

Abstract: A complementary metal oxide semiconductor (CMOS) device and a method for fabricating the same are provided. The CMOS image sensor includes: a first conductive type substrate including a trench; a channel stop layer formed by using a first conductive type epitaxial layer over an inner surface of the trench; a device isolation layer formed on the channel stop layer to fill the trench; a second conductive type photodiode formed in a portion of the substrate in one side of the channel stop layer; and a transfer gate structure formed on the substrate adjacent to the photodiode to transfer photo-electrons generated from the photodiode.

Abstract: A solar cell module with a hermetic chamber in the cover plate is provided. The hermetic chamber is disposed on the non-cell region of the solar cell module to direct light toward the cell region through totally reflection. The hermetic chamber includes a V-shaped groove embedded in the cover plate of the solar cell module, and the V-shaped groove is sealed with a sealing layer so as to make the hermetic chamber as an empty space which does not allow unwanted substances get in or out.

Abstract: An image sensor according to embodiments may include a semiconductor substrate, photodiodes disposed over the semiconductor substrate, a dielectric layer formed over the photodiodes, a color filter layer formed over the dielectric layer, a planarization layer formed over the color filter layer, a phase change material formed over the planarization layer, and a plurality of microlenses formed over the planarization layer, wherein the phase change material is positioned in the microlens. Further, a method for manufacturing an image sensor according to embodiments may include forming a dielectric layer over a semiconductor substrate with a plurality of photodiodes, sequentially forming a color filter layer and a planarization layer over the dielectric layer, forming a phase change material over the planarization layer, forming a patterned phase change material by partially etching the phase change material, and forming microlenses over the planarization layer and the phase change material.

Abstract: A photosensitizing chip package construction and manufacturing method thereof is comprised of photosensitizing chips constructed on one side of a wafer using a bonding layer; a color attachment array being disposed over those photosensitizing chips; a glass substrate provided with weir and covered up over the color attachment array; a proper gap being defined between the glass substrate and the color attachment array to promote permeability of stream of light by direct receiving stream of light from those photosensitizing chips constructed over the wafer.

Abstract: In this method for producing an anti-reflective film, pores are formed on a surface of a polymer molding material to continuously change a refractive index and then reduce reflectance, in which anodic oxidized porous alumina, in which pores having a tapered shape and whose pore diameter continuously changes, are formed by repeating anodic oxidation at about the same formation voltage and pore diameter enlargement treatment, is used as a mold, or a stamper, which is produced by using the anodic oxidized porous aluminum as a mold, is used as a mold.

Abstract: A camera module is disclosed. The camera module includes an imager sensor device comprising a microlens array. A lens set overlies the imager sensor device. A dry film type photoresist spacer is interposed between the imager sensor device and the lens set, wherein the dry film type photoresist spacer has an opening above the microlens array. A fabrication method of the camera module is also disclosed.