Abstract: The present invention provides a photodetector which solves the problem of low sensitivity of a photodetector, an optical communication device equipped with the same, and a method for making the photodetector, and a method for making the optical communication device. The photodetector includes a substrate, a lower cladding layer arranged on the substrate, an optical waveguide arranged on the lower cladding layer, an intermediate layer arranged on the optical waveguide, a optical absorption layer arranged on the intermediate layer, a pair of electrodes arranged on the optical absorption layer, and wherein the optical absorption layer includes a IV-group or III-V-group single-crystal semiconductor, and the optical absorption layer absorbs an optical signal propagating through the optical waveguide.

Abstract: A method for manufacturing semiconductor light-emitting devices comprising the steps of: providing a multi-layer semiconductor film comprising a surface; roughening the surface of the multi-layer semiconductor film to form a scattering surface; re-growing a semiconductor layer on the scattering surface; and roughening the semiconductor layer to form a sub-scattering portion on the scattering surface; wherein the sub-scattering portion is structurally smaller than the scattering surface.

Abstract: A wafer-level method of fabricating an opto-electronic component package, in which the opto-electronic component is mounted to a semiconductor wafer having first and second surfaces on opposite sides of the wafer. The method includes etching vias in the first surface of the semiconductor wafer. The first surface and surfaces in the vias are metallized, and the metal is structured to define a thermal pad and to define the anode and cathode contact pads. A carrier wafer is attached on the side of the semiconductor wafer having the first surface, and the semiconductor wafer is thinned from its second surface to expose the metallization in the vias. Metal is provided on the second surface, and the metal is structured to define a die attach pad and additional anode and cathode pads for the opto-electronic component. The opto-electronic component is mounted on the die attach pad and a protective cover is formed over the opto-electronic component.

Abstract: A method of manufacturing an image pickup device includes a step of forming a filling member such that the filling member covers a light guiding part and a peripheral part provided in a film. The light guiding part is positioned on an image pickup region of the image pickup device and has openings that correspond to respective photoelectric conversion portions. The peripheral part is positioned on a peripheral region of the image pickup device. The filling member fills in the openings. The method includes a step of processing the filling member. The method includes a step of forming light guiding members, which is performed after the step of processing filling member has been performed, by a polishing process performed on the filling member so that the light guiding part is exposed. The light guiding members are part of the filling member and disposed in the openings.

Abstract: A method of manufacturing a buffer layer for a thin film solar cell includes preparing a reaction solution including an ammonia compound, a zinc source, and a sulfur source at a temperature below 70° C.; and immersing a substrate on which an optical absorption layer is formed in the reaction solution. The concentration of the zinc source in the reaction solution is in the range of about 0.01M to about 0.09M.

Abstract: The invention relates to quantum dot and photodetector technology, and more particularly, to quantum dot infrared photodetectors (QDIPs) and focal plane array. The invention further relates to devices and methods for the enhancement of the photocurrent of quantum dot infrared photodetectors in focal plane arrays.

Abstract: The invention relates to a device for industrially producing photovoltaic concentrator modules which consist of a module frame, a lens pane comprising a plurality of Fresnel lenses, a sensor-carrier pane, and an electric line guide, said device comprising the following features: a) a carriage (30) for retaining a module frame (1) in a tension-free manner by means of clamping elements (31) on the two longitudinal sides and stop elements (37) on the two transverse sides, these clamping elements (31) being adjusted by displacing and rotating a shift rod (32), b) a device (47) for punctually applying acrylic and linearly applying silicone (48) onto the support surfaces of the module frame (1), c) one device for laying the sensor-carrier pane (3) and one for laying the lens pane (2), these panes being conveyed in a tension-free manner using special suction devices (39) and being set down with a centrally-positioned, predetermined contact pressure, d) a device for measuring the position of each pane and for positio

Abstract: A method for manufacturing a spectroscopic sensor includes: (a) forming a light receiving element on a semiconductor substrate; (b) forming an angle restricting filter on the semiconductor substrate; and (c) forming a spectroscopic filter on the angle restricting filter. The step (c) of forming a spectroscopic filter includes: (c1) forming a first light transmitting film having a peripheral edge that overlaps a light blocking portion in plan view ox the semiconductor substrate by a lift-off method; and (c2) forming a second light transmitting film at a position spaced apart from the first light transmitting film in plan view of the semiconductor substrate by the lift-off method, the second light transmitting film having a peripheral edge that overlaps the light blocking portion in plan view of the semiconductor substrate.

Abstract: An organic light-emitting diode includes an anode on a substrate; a first hole transporting layer on the anode; a second hole transporting layer on the first hole transporting layer and corresponding to the red and green pixel areas; a first emitting material pattern of a first thickness on the second hole transporting layer and corresponding to the red pixel area; a second emitting material pattern of a second thickness on the second hole transporting layer and corresponding to the green pixel area; a third emitting material pattern of a third thickness on the first hole transporting layer and corresponding to the blue pixel area; an electron transporting layer on the first, second and third emitting material patterns; and a cathode on the electron transporting layer, wherein the second thickness is less than the first thickness and greater than the third thickness.

Abstract: The invention relates to an organic electroluminescent device (1) comprising a substrate (2), at least one electroluminescent layer stack on top of the substrate (2) with at least a substrate electrode (3), a counter electrode (5) and at least one organic electroluminescent layer (4) arranged between substrate electrode (2) and counter electrode (5), and a short prevention layer (6) covering the counter electrode (5) establishing a double layer (DL) with a tensile stress (TS) induced by the short prevention layer (5), and an electrically isolating layer (8) at least partly covering the short prevention layer (6), wherein the electrically isolating layer (8) is suitable to partially dissolve the organic layer (4) in the vicinity of a defect (7) within the electroluminescent layer stack and the tensile stress (TS) induced by the short prevention layer (6) is suitable to roll up (10) the double layer (DL) adjacent to the defect (7) after deposition of the electrically isolating layer (8).

Abstract: An integrated die-level camera system and method of making the camera system include a first die-level camera formed at least partially in a die. A second die level camera is also formed at least partially in the die. Baffling is formed to block stray light between the first and second die-level cameras.

Abstract: A method for manufacturing a micromorph tandem cell is disclosed. The micromorph tandem cell comprises a ?c-Si:H bottom cell and an a-Si:H top cell, an LPCVD ZnO front contact layer and a ZnO back contact in combination with a white reflector. The method comprises the steps of applying an AR—Anti-Reflecting—concept to the micromorph tandem cell; implementing an intermediate reflector in the micromorph tandem cell. The micromorph tandem cell can achieve a stabilized efficiency of 10.6%.

Abstract: A solid-state image pick-up device is provided which includes a semiconductor substrate main body which has an element forming layer and a gettering layer provided on an upper layer thereof; photoelectric conversion elements, each of which includes a first conductive type region, provided in the element forming layer; and a dielectric film which is provided on an upper layer of the gettering layer and which induces a second conductive type region in a surface of the gettering layer.

Abstract: A host substrate assembly includes a first substrate with opposing first and second surfaces, an aperture extending therethrough, circuit layers, and first contact pads electrically coupled to the circuit layers. A sensor chip includes a second substrate with opposing first and second surfaces, a plurality of photo detectors formed on or in the second substrate and configured to receive light incident on the second substrate first surface, and a plurality of second contact pads formed at the second substrate first or second surfaces and are electrically coupled to the photo detectors. A spacer is mounted to the second substrate first surface. A protective substrate is mounted to the spacer and disposed over the photo detectors. Electrically conductive conduits each extend through the spacer and are in electrical contact with one of the second contact pads. Electrical connectors electrically connect the first contact pads and the conduits.

Abstract: A system and method for blocking light from regions around a photodiode in a pixel of an image sensor is provided. In an embodiment a first optical block layer is formed on a first glue layer and a second glue layer is formed on the first optical block layer. The formation of the first optical block layer and the second glue layer is repeated one or more times to form multiple optical block layers and multiple glue layers. As such, if voids open up in the optical block layers during further processing, there is another optical block layer to block any light that may have penetrated through the void.

Abstract: Among other things, one or more image sensors and techniques for forming such image sensors are provided. An image sensor comprises a photodiode array configured to detect light. The image sensor comprises a calibration region configured to detect a color level for image reproduction, such as a black calibration region configured to detect a black level for an image detected by the photodiode array. The image sensor comprises a dielectric film that is formed over the photodiode array and the calibration region. The dielectric film is configured to balance stress between the photodiode and the calibration region in order to improve accuracy of the calibration region.

Abstract: In accordance with one implementation, a photodiode may be integrated by thin film processing within a slider. In accordance with another implementation, an apparatus can be configured to include a slider, a first layer of a metal disposed within the slider, a layer of amorphous silicon disposed adjacent the first layer of metal, a second layer of metal disposed adjacent the layer of amorphous silicon, and wherein the first layer of metal, the layer of amorphous silicon, and the second layer of metal are operable as a photodiode.

Abstract: Among other things, one or more image sensors and techniques for guiding light towards a photodiode are provided. An image sensor comprises a metal grid configured to direct light towards a corresponding photodiode and away from other photodiodes. The image sensor also comprises a dielectric grid and a filler grid over the metal grid to direct light towards the corresponding photodiode and away from other photodiodes, where the filler grid has a different refractive index than the dielectric grid. In this way, crosstalk, otherwise resulting from detection of light by incorrect photodiodes, is mitigated.

Abstract: A memory chip package includes memory chips stacked, electrically connected one another, and configured to input and output an optical signal through an optical line formed by a via penetrating the memory chips. The memory chips input and output optical signals with different wavelengths, and each of the memory chips has an optical-electrical converter configured to convert an optical signal with a corresponding wavelength into an electrical signal and to convert an electrical signal into an optical signal with the corresponding wavelength.

Abstract: Under one aspect of the present invention, a monolithic sun sensor includes a photosensor; a spacer material disposed over the photosensor; and a patterned mask disposed over the spacer material and defining an aperture over the photosensor. The spacer material has a thickness selected such that the patterned mask casts a shadow onto the photosensor that varies as a function of the monolithic sun sensor's angle relative to the sun. The sun sensor may further include a substrate in which the photosensor is embedded or on which the photosensor is disposed. The spacer material may be transparent, and may include a layer of inorganic oxide, or a plurality of layers of inorganic oxide. The patterned mask may include a conductive material, such as a metal. The aperture may be lithographically defined, and may be square. The sun sensor may further include a transparent overlayer disposed over the patterned mask.

Abstract: A concentrator-type photovoltaic module includes a backplane substrate, a plurality of concentrator photovoltaic (CPV) receivers on a surface of the backplane substrate, and concentrating optics positioned over the surface of the backplane substrate and configured to focus on-axis incident light onto the CPV receivers. A plurality of non-concentrator photovoltaic (PV) cells are provided on the surface of the backplane substrate. The PV cells are positioned to receive light that passes off-axis through the concentrating optics. Related devices and methods are also discussed.

Abstract: When forming sophisticated semiconductor devices including complementary transistors having a reduced gate length, the individual transistor characteristics may be adjusted on the basis of individually provided semiconductor alloys, such as a silicon/germanium alloy for P-channel transistors and a silicon/phosphorous semiconductor alloy for N-channel transistors. To this end, a superior hard mask patterning regime may be applied in order to provide compatibility with sophisticated replacement gate approaches, while avoiding undue process non-uniformities, in particular with respect to the removal of a dielectric cap layer.

Abstract: An organic light emitting diode (OLED) display and a method for manufacturing the same are provided. The OLED display includes a substrate, an active layer and a capacitor lower electrode positioned on the substrate, a gate insulating layer positioned on the active layer and the capacitor lower electrode, a gate electrode positioned on the gate insulating layer at a location corresponding to the active layer, a capacitor upper electrode positioned on the gate insulating layer at a location corresponding to the capacitor lower electrode, a first electrode positioned to be separated from the gate electrode and the capacitor upper electrode, an interlayer insulating layer positioned on the gate electrode, the capacitor upper electrode, and the first electrode, a source electrode and a drain electrode positioned on the interlayer insulating layer, and a bank layer positioned on the source and drain electrodes.

Abstract: A semiconductor light-emitting element (1) is provided which includes a semiconductor layer (10), an n-type electrode (18) which is provided on an exposed surface (12a) of an n-type semiconductor layer, wherein an exposed surface is exposed by removing a part of the semiconductor layer (10), a transparent conductive film which is provided on the semiconductor layer (10) and a p-type electrode (17) which is provided on the transparent conductive film; a light-reflecting layer (39) is provided between the semiconductor layer (10) and the transparent conductive film, wherein at least part of the light-reflecting layer overlaps with the p-type electrode (17) in the planar view; the p-type electrode (17) comprises a pad portion (P) and a linear portion (L) which linearly extends from the pad portion (P) and has an annular structure in the planar view; the n-type electrode (18) exists in an inner area which is surrounded by the linear portion (L) and exists on a straight line (L1) which goes through a center (17a)

Abstract: Provided is a semiconductor image sensor device. The image sensor device includes a semiconductor substrate having a first side and a second side opposite the first side. The semiconductor substrate contains a radiation-sensing region configured to sense radiation projected toward the substrate from the second side. A first layer is disposed over the second side of the semiconductor substrate. The first layer has a first energy band gap. A second layer is disposed over the first layer. The second layer has a second energy band gap. A third layer is disposed over the second layer. The third layer has a third energy band gap. The second energy band gap is smaller than the first energy band gap and the third energy band gap.

Abstract: According to one embodiment, a method for manufacturing a semiconductor light emitting device is disclosed. The method can include applying a resin liquid onto a first major surface of a workpiece. The workpiece has the first major surface and includes a plurality of element units and a resin layer holding the plurality of element units. The method causes the particles in the resin liquid to sink and forms a first region on a surface side of the resin liquid and a second region provided between the first region and the workpiece. The method raises a temperature of the workpiece to a second temperature higher than the first temperature to cure the resin liquid to form an optical layer including a first portion and a second portion. In addition, the method divides the optical layer and the resin layer for the plurality of element units.

Abstract: A low voltage APD is disposed at an end of a waveguide extending laterally within a silicon device layer of a PIC chip. The APD is disposed over an inverted re-entrant mirror co-located at the end of the waveguide to couple light by internal reflection from the waveguide to an under side of the APD. In exemplary embodiments, a 45°-55° facet is formed in the silicon device layer by crystallographic etch. In embodiments, the APD includes a silicon multiplication layer, a germanium absorption layer over the multiplication layer, and a plurality of ohmic contacts disposed over the absorption layer. An overlying optically reflective metal film interconnects the plurality of ohmic contacts and returns light transmitted around the ohmic contacts to the absorption layer for greater detector responsivity.

Abstract: A semiconductor optical waveguide device includes a substrate having a first area and a second area, and first, second, and semiconductor mesas on the substrate. The first semiconductor mesa includes a cladding layer and a first mesa portion on the second area, the first mesa portion including first and second portions. The second semiconductor mesa includes an intermediate layer, a first core layer, and first and second mesa portions on the first and second area, respectively. The third semiconductor mesa includes a second core layer, and first and second mesa portions having a greater width than that of the second semiconductor mesa. The first portion of the first semiconductor mesa has a substantially the same width as the second mesa portion of the second semiconductor mesa. The first core layer is optically coupled to the second core layer through the intermediate layer disposed between the first and second core layers.

Abstract: A backside illumination (BSI) CMOS image sensing process includes the following steps. A substrate having an active side is provided. A curving process is performed to curve the active side. A reflective layer is formed on the active side, so that at least a curved mirror is formed on the active side.

Abstract: The present invention provides a method for manufacturing a highly reliable display device at a low cost with high yield. According to the present invention, a step due to an opening in a contact is covered with an insulating layer to reduce the step, and is processed into a gentle shape. A wiring or the like is formed to be in contact with the insulating layer and thus the coverage of the wiring or the like is enhanced. In addition, deterioration of a light-emitting element due to contaminants such as water can be prevented by sealing a layer including an organic material that has water permeability in a display device with a sealing material. Since the sealing material is formed in a portion of a driver circuit region in the display device, the frame margin of the display device can be narrowed.

Abstract: A solar cell module according to the embodiment includes a back electrode layer formed on a top surface of a support substrate and including a first groove; a light absorbing layer formed on the back electrode layer and including a third groove; a front electrode layer formed on the light absorbing layer and including the third groove; and a wavelength conversion material formed in at least one of the first and third grooves.

Abstract: An image sensor and method of manufacturing the same are provided. The image sensor can include a pixel array region having an active pixel area and a dark pixel area surrounding the active pixel area. A dark shield can be formed in the dark pixel area to inhibit light. Dark pixels can be provided under the dark shield. The dark shield can include a thin film including silicon chromium (SiCr).

Abstract: An organic light emitting display device includes a substrate, a plurality of sub-pixels on the substrate, each sub-pixel including a first region configured to emit light and a second region configured to transmit external light, a plurality of thin film transistors disposed in the first region of the each sub-pixel, a plurality of first electrodes disposed in the first region of each sub-pixel and electrically connected to the thin film transistors, a first insulating layer on at least a portion of the first region of each sub-pixel to cover a portion of the first electrode, an organic emission layer on the first electrode, a second insulating layer on at least a portion of the second region of each sub-pixel, the second insulating layer including a plurality of openings therein, and a second electrode covering the organic emission layer, the first insulating layer, and the second insulating layer.

Abstract: The present invention provides a method for manufacturing a highly reliable display device at a low cost with high yield. According to the present invention, a step due to an opening in a contact is covered with an insulating layer to reduce the step, and is processed into a gentle shape. A wiring or the like is formed to be in contact with the insulating layer and thus the coverage of the wiring or the like is enhanced. In addition, deterioration of a light-emitting element due to contaminants such as water can be prevented by sealing a layer including an organic material that has water permeability in a display device with a sealing material. Since the sealing material is formed in a portion of a driver circuit region in the display device, the frame margin of the display device can be narrowed.

Abstract: An entry slit panel for a push-broom hyperspectral camera is formed at least partly from a silicon wafer on which at least one companion sensor is fabricated, whereby the companion sensor is co-planar with the slit and detects light imaged on the panel but not on the slit. In embodiments, the companion sensor is a panchromatic sensor or a sensor that detects light outside the wavelength range of the camera. At least a region of the wafer is back-thinned to a thickness appropriate for a diffraction slit. The slit can be etched or laser cut through the thinned region, or formed between the wafer and another wafer or a conventional blade. The wafer can be back-coated or metalized to ensure its opacity across the camera's wavelength range. The companion sensor can be located relative to the slit to detect scene features immediately before or after the hyperspectral camera.

Abstract: An optical communication module includes an optical semiconductor element. The element includes an optical functional region having a light receiving function or a light emitting function, a first transmission layer transmissive to light emitted from the optical functional region or light received by the optical functional region, and a wiring layer stacked on the first transmission layer and constituting a conduction path to the optical functional region. The communication module also includes a second transmission layer transmissive to the light and disposed to cover the optical semiconductor element, and a first resin member stacked on the second transmission layer. The communication module is formed with a fixing hole for fixing an optical fiber. The fixing hole includes a bottom face provided by the second transmission layer, and an opening formed in an outer surface of the first resin member.

Abstract: Back side illumination (BSI) sensors, manufacturing methods thereof, and semiconductor device manufacturing methods are disclosed. In some embodiments, a method of manufacturing a semiconductor device includes providing a workpiece having a front side and a back side opposite the front side. An integrated circuit is formed on the workpiece, and a first insulating material is formed on the back side of the workpiece. A second insulating material is formed over the first insulating material. The second insulating material is patterned to form a grid on the back side of the workpiece.

Abstract: A method of manufacturing an optical reflector including an alternating stack of at least one first layer of complex refraction index n1 and at least one second layer of complex refraction index n2, in which the first layer includes semiconductor nanocrystals, including the following steps: calculation of the total number of layers of the stack, of the thicknesses of each of the layers and of the values of complex refraction indices n1 and n2 on the basis of the characteristics of a desired spectral reflectivity window of the optical reflector, including the use of an optical transfer matrices calculation method; calculation of deposition and annealing parameters of the layers on the basis of the total number of layers and of the values of previously calculated complex refraction indices n1 and n2; deposition and annealing of the layers in accordance with the previously calculated parameters.

Abstract: Disclosed are a solar cell and a method of fabricating the same. The solar cell includes a back electrode layer, a light absorbing layer on the back electrode layer, a front electrode layer on the light absorbing layer, and a plurality of light path changing particles in the front electrode layer or between the light absorbing layer and the front electrode layer.

Abstract: According to one embodiment, a semiconductor light emitting device includes: first and second semiconductor layers, a light emitting part, and an In-containing layer. The first semiconductor layer is formed on a silicon substrate via a foundation layer. The light emitting part is provided on the first semiconductor layer, and includes barrier layers and a well layer provided between the barrier layers including Ga1?z1Inz1N (0<z1?1). The second semiconductor layer is provided on the light emitting part. The In-containing layer is provided at at least one of first and second positions. The first position is between the first semiconductor layer and the light emitting part. The second position is between the second semiconductor layer and the light emitting part. The In-containing layer includes In with a composition ratio different from the In composition ratio z1 and has a thickness 10 nm to 1000 nm.

Abstract: A thin film solar cell includes a first substrate, a transparent conductive layer on an inner surface of the first substrate, the transparent conductive layer having an uneven top surface and including through-holes, a light-absorbing layer on the transparent conductive layer, a reflection electrode on the light-absorbing layer, a second substrate facing and attached with the first substrate, and a polymeric material layer on an inner surface of the second substrate.

Abstract: An electroluminescence element includes an electroluminescence substrate including a thin film transistor substrate, and a light-emitting layer provided over the thin film transistor substrate and divided by picture-element separating portions so as to correspond to unit picture elements; and a sealing substrate arranged to hermetically seal the light-emitting layer of the electroluminescence substrate. At least one of the electroluminescence substrate and the sealing substrate is a flexible substrate. Spacers are provided between the electroluminescence substrate and the sealing substrate.

Abstract: Apparatuses capable of and techniques for detecting the visible light spectrum are provided.

Abstract: A method for producing a film, the method comprising melting a layer of precursor particles on a substrate until at least a portion of the melted particles are planarized and merged to produce the film. The invention is also directed to a method for producing a photovoltaic film, the method comprising depositing particles having a photovoltaic or other property onto a substrate, and affixing the particles to the substrate, wherein the particles may or may not be subsequently melted. Also described herein are films produced by these methods, methods for producing a patterned film on a substrate, and methods for producing a multilayer structure.

Abstract: There is provided a back-illuminated type solid-state image pickup unit, in which a pad wiring line is provided on a light reception surface, capable of improving light reception characteristics in a photoelectric conversion section by thinning an insulating film in the back-illuminated type solid-state image pickup unit. A solid-state image pickup unit according to the present technology to accomplish such a purpose includes a sensor substrate having a pixel region in which photoelectric conversion sections are formed in an array, and a drive circuit is provided on a surface opposed to a light reception surface for the photoelectric conversion sections of the sensor substrate. Moreover, a through hole via reaching the drive circuit from the light reception surface of the sensor substrate is provided in a peripheral region located outside the pixel region. Further, a pad wiring line directly laminated on the through hole via is provided on the light reception surface in the peripheral region.

Abstract: An integrated die-level camera system and method of making the camera system include a first die-level camera formed at least partially in a die. A second die level camera is also formed at least partially in the die. Baffling is formed to block stray light between the first and second die-level cameras.

Abstract: An image sensor includes: a substrate having a plurality of unit pixel region; a light receiving element formed in the substrate at the unit pixel region; an interlayer dielectric layer formed over the substrate; a lightguide formed in the interlayer dielectric layer for the light receiving element; a light focusing pattern formed over the interlayer dielectric layer at the pixel region; a planarization layer formed over the substrate and covering the light focusing pattern; and a lens formed over the planarization layer at the pixel region.

Abstract: There is provided a phosphor blend for an LED light source comprising from about 25 to about 35 weight percent of a cerium-activated yttrium aluminum garnet phosphor, from about 5 to about 10 weight percent of a europium-activated strontium calcium silicon nitride phosphor, and from about 50 to about 75 weight percent of a europium-activated calcium magnesium chlorosilicate phosphor. An LED light source in accordance with this invention has a B:G:R ratio for a 5500 K daylight balanced color film of X:Y:Z when directly exposed through a nominal photographic lens, wherein X, Y and Z each have a value from 0.90 to 1.10.

Abstract: A tunable metamaterial has a two dimensional array of resonant annular ring elements; and a plurality of voltage controllable electrical tuning elements disposed in or adjacent openings in each of said ring elements, each of said voltage controllable electrical tuning element ohmically contacting portions of only one of said ring elements. The voltage controllable electrical tuning elements may comprise highly doped semiconductor tunnel diodes, or the charge accumulation layer at the semiconductor/insulator interface of a metal-insulator-semiconductor structure, or nanoelectromechanical (NEMs) capacitors. The tunable metamaterial may be used, for example, in an optical beam steering device using the aforementioned tunable optical metamaterial in which a free-space optical beam is coupled into a receiving portion of a plane of the optical metamaterial and is steered out of a transmitter portion of the plane of the optical metamaterial in controllable azimuthal and elevational directions.

Abstract: A photoelectric conversion device includes a plurality of photoelectric conversion regions disposed over a substrate, and a colored region disposed among the photoelectric conversion regions over the substrate, the colored region forming an image over the substrate.