Combined Mechanical And Chemical Material Removal Patents (Class 438/691)
  • Patent number: 10792783
    Abstract: A system, a control method and an apparatus for chemical mechanical polishing (CMP) are introduced in the present application. The CMP apparatus may include a polishing pad, a first sensor, a polishing head and a condition. The polishing pad has a plurality of groves arranged randomly or in a specific pattern. The first sensor is configured to measure the pad profile of the polishing pad, where the pad profile includes the depth of each of the grooves on the polishing pad. The polishing head and the conditioner are operated according to at least one polishing condition, and the at least one polishing condition is tuned according to the pad profile.
    Type: Grant
    Filed: January 12, 2018
    Date of Patent: October 6, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hsiang-Chu Hu, Chun-Hai Huang, Mu-Han Cheng, Yu-Chin Tseng, Chien-Chih Chen, Tzu-Shin Chen
  • Patent number: 10711159
    Abstract: The present disclosure provides chemical mechanical polishing compositions that achieve minimal dishing at reduced dishing reducer (DR) levels when compared to known CMP compositions. The compositions of the disclosure include a dynamic surface tension reducer (DSTR) which allows for lower levels of dishing reducer in the compositions. Indeed, the compositions of the disclosure allow for lower levels of dishing reducer to achieve the same dishing as known compositions having higher levels of dishing reducer. Deleterious effects of high DR levels are thereby avoided or minimized when employing the compositions of the disclosure.
    Type: Grant
    Filed: December 27, 2017
    Date of Patent: July 14, 2020
    Assignee: FUJIFILM ELECTRONIC MATERIALS U.S.A., INC.
    Inventor: James McDonough
  • Patent number: 10647900
    Abstract: A chemical-mechanical polishing (CMP) composition is provided comprising (A) one or more compounds selected from the group of benzotriazole derivatives which act as corrosion inhibitors and (B) inorganic particles, organic particles, or a composite or mixture thereof. The invention also relates to the use of certain compounds selected from the group of benzotriazole derivatives as corrosion inhibitors, especially for increasing the selectivity of a chemical mechanical polishing (CMP) composition for the removal of tantalum or tantalum nitride from a substrate for the manufacture of a semiconductor device in the presence of copper on said substrate.
    Type: Grant
    Filed: July 1, 2014
    Date of Patent: May 12, 2020
    Assignee: BASF SE
    Inventors: Robert Reichardt, Martin Kaller, Michael Lauter, Yuzhuo Li, Andreas Klipp
  • Patent number: 10566204
    Abstract: In some embodiments, a method of forming an integrated circuit includes providing a semiconductor substrate having an electronic circuit formed on a front side, and having a first material layer located over a second side of the substrate and a second material layer located between the first material layer and the second side. At least a portion of the first material layer is removed using a first chemical etching process, thereby exposing the second material layer. At least a portion of the second material layer is removed using a second chemical etching process. A portion of the substrate is then mechanically removed from the second side.
    Type: Grant
    Filed: February 22, 2019
    Date of Patent: February 18, 2020
    Assignee: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Jian Jun Kong, She Yu Tang, Tian Yi Zhang, Qin Xu Yu, Sheng Pin Yang
  • Patent number: 10483084
    Abstract: The system described herein relates to an object preparation device for preparing an object in a particle beam apparatus. By way of example, the particle beam apparatus is an electron beam apparatus and/or an ion beam apparatus. The system described herein moreover relates to a particle beam apparatus having such an object preparation device and to a method for operating the particle beam apparatus. The object preparation device may have an object receptacle device for receiving the object, a cutting device and a cutting bevel for cutting the object, wherein the cutting bevel may be arranged at the cutting device. The cutting bevel may lay in a cutting plane. Further, an axis of rotation may lay in the cutting plane. The cutting bevel may be embodied to be rotatable about the axis of rotation.
    Type: Grant
    Filed: February 27, 2018
    Date of Patent: November 19, 2019
    Assignee: Carl Zeiss Microscopy GmbH
    Inventor: Josef Biberger
  • Patent number: 10468266
    Abstract: A dry etching method includes performing at least two etching steps, and further includes injecting protective gas into an etch chamber for processing between any two successive etching steps, wherein the protective gas generates plasma to neutralize electrons accumulated on a side wall of an etching trench. According to the present disclosure, hydrogen plasma is added in an etching process to remove the electrons accumulated on the side wall of the etching trench so as to reduce the microetching effect in multiple etching. In this way, process stability and reliability of a display substrate are improved.
    Type: Grant
    Filed: April 7, 2016
    Date of Patent: November 5, 2019
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Yinghai Ma, Liangjian Li, Yueping Zuo
  • Patent number: 10392531
    Abstract: A process for removing a bulk material layer from a substrate and planarizing the exposed surface by CMP by (1) providing an CMP agent exhibiting at the end of the chemical mechanical polishing, without the addition of supplementary materials, the same SER as at its start and a lower MRR than at its start, —an SER which is lower than the initial SER and an MRR which is the same or essentially the same as the initial MRR or a lower SER and a lower MRR than at its start; (2) contacting the surface of the bulk material layer with the CMP agent; (3) the CMP of the bulk material layer with the CMP agent; and (4) continuing the CMP until all material residuals are removed from the exposed surface; and a CMP agent and their use for manufacturing electrical and optical devices.
    Type: Grant
    Filed: November 25, 2010
    Date of Patent: August 27, 2019
    Assignee: BASF SE
    Inventors: Vijay Immanuel Raman, Sophia Ebert, Mario Brands, Yongqing Lan, Philipp Zacharias, Ilshat Gubaydullin, Yuzhuo Li
  • Patent number: 10332787
    Abstract: Formation methods of a semiconductor device structure are provided. A method includes forming a dielectric layer over a first conductive feature and a second conductive feature. The method also includes depositing a conformal layer in a first via hole and a second via hole in the dielectric layer. The method further includes removing the conformal layer in the second via hole. The dielectric layer remains covered by the conformal layer in the first via hole. In addition, the method includes etching the conformal layer in the first via hole and the dielectric layer until the first conductive feature and the second conductive feature become exposed through the first via hole and the second via hole, respectively. The method also includes forming a third conductive feature in the first via hole and a fourth conductive feature in the second via hole.
    Type: Grant
    Filed: June 27, 2017
    Date of Patent: June 25, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chung-Wen Wu, Chien-Wen Chiu, Chien-Chung Chen, Shiu-Ko Jangjian
  • Patent number: 10312107
    Abstract: A method includes forming a metal hard mask over a low-k dielectric layer. The step of forming the metal hard mask includes depositing a sub-layer of the metal hard mask, and performing a plasma treatment on the sub-layer of the metal hard mask. The metal hard mask is patterned to form an opening. The low-k dielectric layer is etched to form a trench, wherein the step of etching is performed using the metal hard mask as an etching mask.
    Type: Grant
    Filed: September 8, 2011
    Date of Patent: June 4, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chung-Chi Ko, Chia-Cheng Chou, Shing-Chyang Pan, Keng-Chu Lin, Shwang-Ming Jeng
  • Patent number: 10269538
    Abstract: An example film forming device is provided with: a chamber for forming a film on a substrate; a supply tube for supplying a cleaning gas to the chamber; and a plasma generating unit, which is provided to the supply tube, and which generates plasma from the cleaning gas. The film forming device is characterized by being provided with: a temperature control unit that controls the temperature of the supply tube to temperature equal to or higher than a predetermined temperature; and a supply unit which supplies, each time when a previously set time equal to or shorter than 36 hours elapses, the chamber with the plasma thus generated by the plasma generating unit.
    Type: Grant
    Filed: March 27, 2015
    Date of Patent: April 23, 2019
    Assignee: Sakai Display Products Corporation
    Inventor: Atsushi Shoji
  • Patent number: 10249504
    Abstract: In some embodiments, a method includes wet-etching a first film layer of a plurality of film layers stacked on a semiconductor substrate, the wet-etching of the first film layer performed using a first chemical, where the first film layer is an outermost film layer stacked on the semiconductor substrate. The method further includes wet-etching a second film layer of the plurality of film layers using a second chemical. The method also includes using a mechanical grinding wheel to grind the semiconductor substrate to reduce a thickness of the semiconductor substrate.
    Type: Grant
    Filed: January 8, 2018
    Date of Patent: April 2, 2019
    Assignee: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Jian Jun Kong, She Yu Tang, Tian Yi Zhang, Qin Xu Yu, Sheng Pin Yang
  • Patent number: 10179870
    Abstract: Provided herein are abrasive compositions that use surfactants containing block copolymers of both propylene oxide and ethylene oxide moieties. Abrasive compositions derived from these copolymers were capable of providing both superior levels of cut rate while preserving a high quality surface finish on gelcoat surfaces comparable to those achieved using conventional rubbing compounds.
    Type: Grant
    Filed: November 24, 2015
    Date of Patent: January 15, 2019
    Assignee: 3M Innovative Properties Company
    Inventors: Richard S. Smith, Douglas A. Davis
  • Patent number: 10170354
    Abstract: A method for partially filling an open feature on a substrate includes receiving a substrate having a layer with at least one open feature formed therein, wherein the open feature penetrates into the layer from an upper surface and includes sidewalls extending to a bottom of the open feature. The open feature is overfilled with an organic coating that covers the upper surface of the layer and extends to the bottom of the open feature. The method further includes removing a portion of the organic coating to expose the upper surface of the layer and recessing the organic coating to a pre-determined depth from the upper surface to create an organic coating plug of pre-determined thickness at the bottom of the open feature, and converting the chemical composition of the organic coating plug to create an inorganic plug.
    Type: Grant
    Filed: April 12, 2016
    Date of Patent: January 1, 2019
    Assignee: Tokyo Electron Limited
    Inventors: Mark H. Somervell, Benjamen M. Rathsack
  • Patent number: 10170335
    Abstract: A process for chemical mechanical polishing a substrate containing cobalt and TiN to at least improve cobalt: TiN removal rate selectivity. The process includes providing a substrate containing cobalt and TiN; providing a polishing composition, containing, as initial components: water; an oxidizing agent; alanine or salts thereof; and, colloidal silica abrasives with diameters of ?25 nm; and, providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the cobalt is polished away such that there is an improvement in the cobalt: TiN removal rate selectivity.
    Type: Grant
    Filed: September 21, 2017
    Date of Patent: January 1, 2019
    Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
    Inventors: Murali G. Theivanayagam, Hongyu Wang, Matthew Van Hanehem
  • Patent number: 10157781
    Abstract: Methods for forming semiconductor structures are provided. The method for forming a semiconductor structure includes forming a conductive material in the trench and over a top surface of the material layer and polishing the conductive material with a slurry to expose the top surface of the material layer and to form a conductive structure in the trench. The method for forming a semiconductor structure further includes forming a material layer over a substrate and forming a trench in the material layer. The method for forming a semiconductor structure further includes removing the slurry with a reducing solution. In addition, the reducing solution includes a reducing agent, and a standard electrode voltage of the conductive material is greater than a standard electrode voltage of the reducing agent.
    Type: Grant
    Filed: January 9, 2017
    Date of Patent: December 18, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chun-Wei Hsu, Chi-Jen Liu, Cheng-Chun Chang, Yi-Sheng Lin, Pinlei Edmund Chu, Liang-Guang Chen
  • Patent number: 9995003
    Abstract: Disclosed herein is a wet paper friction material for vehicles. The wet paper friction material comprises: a matrix containing a hardwood pulp in an amount of about 40 to 50% by weight; a spherical silica in an amount of about 16 to 21% by weight; a friction modifier in an amount of about 5% by weight or less but greater than 0% by weight; and a filler constituting the remaining balance of the wet paper friction material, and all the % by weights are based on the total weight of the wet paper friction material.
    Type: Grant
    Filed: August 2, 2016
    Date of Patent: June 12, 2018
    Assignees: Hyundai Motor Company, Jinmyung Frictech Co., Ltd.
    Inventors: Yoon Cheol Kim, Seong Jin Kim, Eun Pa Cho, Young Taek Oh, Sung Jin Hong
  • Patent number: 9882007
    Abstract: Methods for mounting and dismounting thin and/or bowed semiconductor-on-diamond wafers (401) to a carrier (407) are disclosed that flatten said wafers and provide mechanical support to enable efficient semiconductor device processing on said semiconductor-on-diamond wafers.
    Type: Grant
    Filed: July 2, 2013
    Date of Patent: January 30, 2018
    Assignee: RFHIC Corporation
    Inventors: Quentin Diduck, Daniel Francis, Frank Yantis Lowe, Felix Ejeckham
  • Patent number: 9859125
    Abstract: Methodologies and a device for SRAM patterning are provided. Embodiments include forming a spacer layer over a fin channel, the fin channel being formed in four different device regions; forming a bottom mandrel over the spacer layer; forming a top mandrel directly over the bottom mandrel, wherein the top and bottom mandrels including different materials; forming a buffer oxide layer over the top mandrel; forming an anti-reflective coating (ARC) over the first OPL; forming a photoresist (PR) over the ARC and patterning the PR; and etching the first OPL, ARC, buffer oxide, and top mandrel with the pattern of the PR, wherein a pitch of the PR as patterned is different in each of the four device regions.
    Type: Grant
    Filed: March 17, 2016
    Date of Patent: January 2, 2018
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Min Gyu Sung, Ruilong Xie, Chanro Park, Hoon Kim, Kwan-Yong Lim
  • Patent number: 9733546
    Abstract: An optical component includes an optical device comprising a bonding face and an optically polished end face, and a metal film formed on the bonding face of the optical device and for bonding the optical device onto a substrate. The metal film includes a main covering portion covering a region except an end part of the bonding face on the side of the end face and an end part-covering portion covering the bonding face in the end part. A non-covered part, which is not covered by the metal film, is provided between the main covering portion and end part-covering portion.
    Type: Grant
    Filed: March 23, 2016
    Date of Patent: August 15, 2017
    Assignee: NGK INSULATORS, LTD.
    Inventors: Shoichiro Yamaguchi, Naotake Okada, Keiichiro Asai
  • Patent number: 9677002
    Abstract: An etching composition includes about 1 wt % to about 7 wt % of hydrogen peroxide, about 20 wt % to about 80 wt % of phosphoric acid, about 0.001 wt % to about 1 wt % of an amine or amide polymer, 0 wt % to about 55 wt % of sulfuric acid, and about 10 wt % to about 45 wt % of deionized water.
    Type: Grant
    Filed: October 9, 2015
    Date of Patent: June 13, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sang Won Bae, Yongsun Ko, Byoungho Kwon, Bo yun Kim, Hongjin Kim, Sungoh Park, Kuntack Lee, Hyosan Lee, Sol Han
  • Patent number: 9579769
    Abstract: Provided is a polishing composition, which comprises abrasive grains, a water-soluble polymer, an aggregation inhibitor and water. The ratio R1/R2 is 1.3 or less, where R1 represents the average particle diameter of the particles present in the polishing composition and R2 represents the average particle diameter of the abrasive grains when the abrasive grains are dispersed in water at the same concentration as that of the abrasive grains in the polishing composition. The polishing composition can be used mainly for polishing the surface of a silicon substrate.
    Type: Grant
    Filed: October 9, 2012
    Date of Patent: February 28, 2017
    Assignee: FUJIMI INCORPORATED
    Inventors: Kohsuke Tsuchiya, Yoshio Mori, Shinichiro Takami, Shuhei Takahashi
  • Patent number: 9564337
    Abstract: Provided is a polishing liquid including cerium oxide particles, an organic acid A, a polymer compound B having a carboxyl acid group or a carboxylate group, and water, wherein the organic acid A has at least one group selected from the group consisting of —COOM group, -Ph-OM group, —SO3M group and —PO3M2 group, pKa of the organic acid A is less than 9, a content of the organic acid A is 0.001 to 1 mass % with respect to the total mass of the polishing liquid, and a content of the polymer compound B is 0.01 to 0.50 mass % with respect to the total mass of the polishing liquid, and pH is in the range of 4.0 to 7.0.
    Type: Grant
    Filed: December 22, 2011
    Date of Patent: February 7, 2017
    Assignee: HITACHI CHEMICAL CO., LTD.
    Inventors: Munehiro Oota, Takaaki Tanaka, Toshio Takizawa, Shigeru Yoshikawa, Takaaki Matsumoto, Takahiro Yoshikawa, Takashi Shinoda
  • Patent number: 9556015
    Abstract: The present disclosure provides a substrate structure for a micro electro mechanical system (MEMS) device. The substrate structure includes a cap and a micro electro mechanical system (MEMS) substrate. The cap has a cavity, and the MEMS substrate is disposed on the cap. The MEMS substrate has a plurality of through holes exposing the cavity, and an aspect ratio of the through hole is greater than 30.
    Type: Grant
    Filed: October 28, 2015
    Date of Patent: January 31, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Tsai-Hao Hung, Shih-Chi Kuo, Tsung-Hsien Lee, Tao-Cheng Liu
  • Patent number: 9534147
    Abstract: The invention provides a polishing composition that contains (a) ?-alumina particles that have an average particle size of about 250 nm to about 300 nm, (b) a per-type oxidizing agent, (c) a complexing agent, wherein the complexing agent is an amino acid or an organic acid, and (d) water. The invention also provides a method of polishing a substrate, especially a nickel-phosphorous substrate, with the polishing composition.
    Type: Grant
    Filed: October 16, 2014
    Date of Patent: January 3, 2017
    Assignee: Cabot Microelectronics Corporation
    Inventors: Hon Wu Lau, Selvaraj Palanisamy Chinnathambi, Ke Zhang
  • Patent number: 9502318
    Abstract: A polish apparatus including a rotatable table configured to receive a polish pad having a polish surface; a polish head configured to hold a polish object and configured to be capable of placing the polish object in contact with the polish surface while holding the polish object; at least one contact portion being provided with a contact surface and configured to be capable of contacting the polish surface when the table is in rotation; and a measurement portion configured to measure a state of the contact surface of the contact portion being configured to contact the polish surface of the polish pad.
    Type: Grant
    Filed: March 9, 2015
    Date of Patent: November 22, 2016
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Dai Fukushima, Jun Takayasu, Takashi Watanabe
  • Patent number: 9333619
    Abstract: The present disclosure provides a chemical mechanical polishing (CMP) system. The CMP system includes a pad designed for wafer polishing, a motor driver coupled with the pad and designed to drive the pad during the wafer polishing, and a controller coupled with the motor driver and designed to control the motor driver. The CMP system further includes an in-situ rate monitor designed to collect polishing data from a wafer on the pad, determine CMP endpoint based on a life stage of the pad, and provide the CMP endpoint to the controller.
    Type: Grant
    Filed: February 4, 2013
    Date of Patent: May 10, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chu-An Lee, Hui-Chi Huang, Peng-Chung Jangjian
  • Patent number: 9245765
    Abstract: Implementations and techniques for applying a film to a semiconductor wafer and for processing a semiconductor wafer are generally disclosed.
    Type: Grant
    Filed: October 14, 2010
    Date of Patent: January 26, 2016
    Assignee: EMPIRE TECHNOLOGY DEVELOPMENT LLC
    Inventor: Florian Bieck
  • Patent number: 9238288
    Abstract: In a method for processing a plate object, etching is performed for a flat plate object by a predetermined etching method and the shape of the plate object after the etching is grasped in advance. In a grinding step, the plate object is ground into a grinding-finished shape that is a non-flat shape obtained by inverting the shape of the plate object after the etching to the reverse shape. When subsequent etching by the predetermined etching method is performed for a grinding-target surface, the plate object is formed into a flat shape with a uniform thickness.
    Type: Grant
    Filed: December 12, 2013
    Date of Patent: January 19, 2016
    Assignee: Disco Corporation
    Inventors: Tetsukazu Sugiya, Susumu Hayakawa
  • Patent number: 9222009
    Abstract: Provided are fine abrasive particles which have a high rate of polishing and generate few polishing flaws. A process for producing then abrasive particles is also provided in which the fine abrasive particles have a reduced coefficient of fluctuation in particle diameter, the production steps are simple, and the production cost is low. The fine abrasive particles comprise cerium oxide, at least one element selected from La, Pr, Nd, Sm, and Eu, and one or more element selected from Y, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and are characterized in that the cerium oxide has a Ce content of 20 mol % or higher and that the sum (mol %) of the content of the at least one element selected from La, Pr, Nd, Sm, Nd Eu and the content of Ce in the cerium oxide is greater than the sum (mol %) of the contents of the one or more elements selected from Y, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu.
    Type: Grant
    Filed: October 7, 2011
    Date of Patent: December 29, 2015
    Assignee: Konica Minolta, Inc.
    Inventors: Akihiro Maezawa, Atsushi Takahashi, Yuuki Nagai
  • Patent number: 9200180
    Abstract: A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition contains an abrasive, benzenesulfonic acid compound, a per-compound oxidizing agent, and water. The composition affords tunability of removal rates for metal, barrier layer materials, and dielectric layer materials in metal CMP processes. The composition is particularly useful in conjunction with the associated method for metal CMP applications (e.g., step 2 copper CMP processes).
    Type: Grant
    Filed: April 7, 2009
    Date of Patent: December 1, 2015
    Assignee: Air Products and Chemicals, Inc.
    Inventors: Gautam Banerjee, Timothy Frederick Compton, Junaid Ahmed Siddiqui, Ajoy Zutshi
  • Patent number: 9190286
    Abstract: The present disclosure is directed to a highly dilutable chemical mechanical polishing concentrate comprising an abrasive, an acid, a stabilizer, and water with a point-of-use pH ranging from 2.2-3.5 for planarizing current and next generation semiconductor integrated circuit FEOL/BEOL substrates.
    Type: Grant
    Filed: January 16, 2015
    Date of Patent: November 17, 2015
    Assignee: Fujifilm Planar Solutions, LLC
    Inventors: Bin Hu, Abhiskek Singh, Gert Moyaerts, Deepak Mahulikar, Richard Wen
  • Patent number: 9169126
    Abstract: The present invention has an object to provide a method for producing particulate barium carbonate having desired properties such as high purity, fineness, and has a spherical shape. The present invention relates to a method of producing substantially spherical barium carbonate, including (A) mixing, in an aqueous medium, a barium compound with at least one first ingredient selected from the group consisting of gluconic acid or salts thereof, gluconolactone, glucoheptonic acid or salts thereof, and glucoheptonolactone, to prepare a mixture; and (B) reacting the barium compound with carbon dioxide or a water-soluble carbonate in the mixture, to produce substantially spherical barium carbonate.
    Type: Grant
    Filed: March 25, 2010
    Date of Patent: October 27, 2015
    Assignee: Sakai Chemical Industry Co., Ltd.
    Inventors: Yusuke Shimizu, Hiroyuki Izumikawa
  • Patent number: 9165803
    Abstract: A bonding method according to an exemplary embodiment of the present disclosure includes a first holding processing, a second holding processing, a temporary bonding processing, a temperature increasing processing and a main bonding processing. In the first holding processing, a target substrate is held. In the second holding processing, a glass substrate held by electrostatic adsorption. In the temporary bonding processing, the target substrate and the glass substrate are temporarily bonded with a pressing force lower than a predetermined pressing force at a temperature lower than a predetermined temperature. In the temperature increasing processing, while releasing the electrostatic adsorption of the glass substrate at the same time as or after the temporary bonding, the temperature is increased to the predetermined temperature. In the main bonding processing, a main bonding of the target substrate and the glass substrate is performed with the predetermined pressing force.
    Type: Grant
    Filed: April 17, 2014
    Date of Patent: October 20, 2015
    Assignee: Tokyo Electron Limited
    Inventors: Goro Furutani, Norio Wada, Satoshi Ookawa
  • Patent number: 9142411
    Abstract: A method for producing a semiconductor device includes: an arranging process of arranging a plurality of silicon carbide wafers having opposed first and surfaces so that the first surface and the second surface of adjacent silicon carbide wafers face each other and are separated in parallel; and a heat treatment process of heating the arranged plurality of silicon carbide wafers so that the first surface of each silicon carbide wafer becomes higher in temperature than the second surface thereof, and, in the adjacent silicon carbide wafers, the second surface of one silicon carbide wafer becomes higher in temperature than the first surface of the other silicon carbide wafer that faces the second surface.
    Type: Grant
    Filed: November 26, 2013
    Date of Patent: September 22, 2015
    Assignee: Toyota Jidosha Kabushiki Kaisha
    Inventors: Masatoshi Tsujimura, Hirokazu Fujiwara, Tomoo Morino, Narumasa Soejima
  • Patent number: 9101965
    Abstract: A high-pressure washing liquid ejecting washing apparatus comprises a bar-shaped holder; and a plurality of high-pressure washing liquid ejecting nozzles arranged at constant intervals along a longitudinal direction of the bar-shaped holder, the holder being supported at both sides in a longitudinal direction thereof such that the holder is rotatable around its longitudinal axis, the holder being reciprocatingly rotated around the longitudinal axis within a predetermined rotational angle and the ejecting nozzles ejecting a high-pressure washing liquid to a washed surface of an object in a single straight-line shape to wash the object while the object is conveyed at a constant speed with respect to the holder, wherein the holder has a length which is not less than a length across the object and is disposed such that the holder is orthogonal to a direction in which the object is conveyed or is tilted with respect to the direction in which the object is conveyed, when viewed from a normal line direction of the w
    Type: Grant
    Filed: July 17, 2009
    Date of Patent: August 11, 2015
    Assignee: KAWASAKI JUKOGYO KABUSHIKI KAISHA
    Inventors: Yoshiaki Aoki, Morimasa Kuge, Keiji Tsujita, Hideyuki Tanaka, Mitsuru Nomura
  • Patent number: 9070399
    Abstract: There is provided a polishing composition for a magnetic disk substrate that can reduce scratches, nanoprotrusion defects, and substrate surface waviness after polishing. The polishing composition for a magnetic disk substrate that contains: a copolymer that has a constituent unit derived from a monomer having a solubility of 2 g or less in 100 g of water at 20° C. and a constituent unit having a sulfonic acid group, and has a saturated hydrocarbon chain as the main chain thereof, or a salt of the copolymer; an abrasive; and water.
    Type: Grant
    Filed: December 18, 2009
    Date of Patent: June 30, 2015
    Assignee: Kao Corporation
    Inventors: Takeshi Hamaguchi, Haruhiko Doi
  • Patent number: 9048283
    Abstract: Hybrid bonding systems and methods for semiconductor wafers are disclosed. In one embodiment, a hybrid bonding system for semiconductor wafers includes a chamber and a plurality of sub-chambers disposed within the chamber. A robotics handler is disposed within the chamber that is adapted to move a plurality of semiconductor wafers within the chamber between the plurality of sub-chambers. The plurality of sub-chambers includes a first sub-chamber adapted to remove a protection layer from the plurality of semiconductor wafers, and a second sub-chamber adapted to activate top surfaces of the plurality of semiconductor wafers prior to hybrid bonding the plurality of semiconductor wafers together. The plurality of sub-chambers also includes a third sub-chamber adapted to align the plurality of semiconductor wafers and hybrid bond the plurality of semiconductor wafers together.
    Type: Grant
    Filed: July 5, 2012
    Date of Patent: June 2, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ping-Yin Liu, Shih-Wei Lin, Xin-Hua Huang, Lan-Lin Chao, Chia-Shiung Tsai
  • Patent number: 9039925
    Abstract: Provided is a polishing slurry composition, including a non-ionic surfactant represented by the following formula (1) R—(OCH2CH2)x—OH??formula (1) wherein x is an integer from 1 to 50, and R is selected from a group consisting of a C3-C50 alkyl group, a C6-C55 benzylalkyl group and a C6-C55 phenylalkyl group.
    Type: Grant
    Filed: August 7, 2012
    Date of Patent: May 26, 2015
    Assignee: UWIZ Technology Co., Ltd.
    Inventors: Wei-Jung Chen, Wen-Tsai Tsai, Ho-Ying Wu, Song-Yuan Chang, Ming-Hui Lu
  • Patent number: 9034708
    Abstract: There is provided a method of fabricating a semiconductor device, the method including: forming a first semiconductor region at a front surface of a substrate, the first semiconductor region including an active element that regulates current flowing in a thickness direction of the substrate; grinding a rear surface of the substrate; after the grinding, performing a first etching that etches the rear surface of the substrate with a chemical solution including phosphorus; after the first etching, performing a second etching that etches the rear surface with an etching method with a lower etching rate than the first etching; and after the second etching, forming a second semiconductor region through which the current is to flow, by implanting impurities from the rear surface of the substrate.
    Type: Grant
    Filed: December 10, 2013
    Date of Patent: May 19, 2015
    Assignee: LAPIS SEMICONDUCTOR CO., LTD.
    Inventor: Masataka Yoshinari
  • Patent number: 9029269
    Abstract: A method of treating the surface of a semiconductor wafer through the formation of a bonding system is provided in order to enhance the handling of the wafer during subsequent processing operations. The method generally comprises the steps of applying a release layer and an adhesive to different wafers; bonding the wafers together to form a bonded wafer system; performing at least one wafer processing operation (e.g., wafer grinding, etc.) to form a thin processed wafer; debonding the wafers; and then cleaning the surface of the processed wafer with an organic solvent that is capable of dissolving the release layer or any residue thereof. The adhesive includes a vinyl-functionalized polysiloxane oligomeric resin, a Si—H functional polysiloxane oligomeric resin, a catalyst, and optionally an inhibitor, while the release layer is comprised of either a silsesquioxane-based resin or a thermoplastic resin.
    Type: Grant
    Filed: February 24, 2012
    Date of Patent: May 12, 2015
    Assignee: Dow Corning Corporation
    Inventors: Michael Bourbina, Jeffrey N. Bremmer, Eric S. Moyer, Sheng Wang, Craig R. Yeakle
  • Patent number: 9005472
    Abstract: An aqueous polishing agent, comprising, as the abrasive, at least one kind of polymer particles (A) finely dispersed in the aqueous phase and having at their surface a plurality of at least one kind of functional groups (a1) capable of interacting with the metals and/or the metal oxides on top of the surfaces to be polished and forming complexes with the said metals and metal cations, the said polymer particles (A) being preparable by the emulsion or suspension polymerization of at least one monomer containing at least one radically polymerizable double bond in the presence of at least one oligomer or polymer containing a plurality of functional groups (a1); graft copolymers preparable by the emulsion or suspension polymerization of at least one monomer containing at least one radically polymerizable double bond in the presence of at least one oligomeric or polymeric aminotriazine-polyamine condensate; and a process for the chemical and mechanical polishing of patterned and unstructured metal surfaces making
    Type: Grant
    Filed: January 19, 2011
    Date of Patent: April 14, 2015
    Assignee: BASF SE
    Inventors: Vijay Immanuel Raman, Ilshat Gubaydullin, Mario Brands, Yuzhuo Li, Maxim Peretolchin
  • Patent number: 9000567
    Abstract: An object is to provide a compound semiconductor substrate and a surface-treatment method thereof, in which, even after the treated substrate is stored for a long period of time, resistance-value defects do not occur. Even when the compound semiconductor substrate is stored for a long period of time and an epitaxial film is then formed thereon, electrical-characteristic defects do not occur. The semiconductor substrate according to the present invention is a compound semiconductor substrate at least one major surface of which is mirror-polished, the mirror-polished surface being covered with an organic substance containing hydrogen (H), carbon (C), and oxygen (O) and alternatively a compound semiconductor substrate at least one major surface of which is mirror-finished, wherein a silicon (Si) peak concentration at an interface between an epitaxial film grown at a growth temperature of 550° C. and the compound semiconductor substrate is 2×1017 cm?3 or less.
    Type: Grant
    Filed: May 16, 2012
    Date of Patent: April 7, 2015
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Kenichi Miyahara, Takayuki Nishiura, Mitsutaka Tsubokura, Shinya Fujiwara
  • Publication number: 20150076520
    Abstract: In a fabrication method of a silicon carbide semiconductor element including a drift layer playing a role of retaining a high withstand voltage on a front side of a semiconductor substrate of silicon carbide and including an ohmic electrode on a backside, dicing is added to form at least one dicing line in an element active region on a surface of the semiconductor substrate on a side opposite of the drift layer before forming the ohmic electrode on the backside of the semiconductor substrate. Thus, a silicon carbide semiconductor element and fabrication method thereof is provided such that even if the semiconductor substrate is made thinner to reduce the on-resistance, the strength of the substrate can be maintained and cracking of the wafer during wafer processing can be reduced.
    Type: Application
    Filed: March 18, 2013
    Publication date: March 19, 2015
    Applicants: FUJI ELECTRIC CO., LTD., NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
    Inventors: Takashi Tsuji, Akimasa Kinoshita, Kenji Fukuda
  • Patent number: 8980748
    Abstract: A substrate polishing method, a semiconductor device and a fabrication method for a semiconductor device are disclosed by which high planarization polishing can be achieved. In the substrate polishing method, two or more different slurries formed from ceria abrasive grains having different BET values from each other are used to carry out two or more stages of chemical-mechanical polishing processing of a polishing object oxide film on a substrate to flatten the polishing object film.
    Type: Grant
    Filed: January 3, 2008
    Date of Patent: March 17, 2015
    Assignee: Sony Corporation
    Inventors: Hiroko Nakamura, Takaaki Kozuki, Takayuki Enomoto, Yuichi Yamamoto
  • Patent number: 8980113
    Abstract: A method for chemical mechanical polishing of a substrate includes polishing the substrate at a stock removal rate of greater than about 2.5 ?/min to achieve a Ra of not greater than about 5.0 ?. The substrate can be a III-V substrate or a SiC substrate. The polishing utilizes a chemical mechanical polishing slurry comprising ultra-dispersed diamonds and at least 80 wt % water.
    Type: Grant
    Filed: March 12, 2010
    Date of Patent: March 17, 2015
    Assignee: Saint-Gobain Ceramics & Plastics, Inc.
    Inventors: Jun Wang, Ronald W. Laconto, Andrew G. Haerle
  • Patent number: 8980750
    Abstract: A chemical mechanical polishing (CMP) composition (Q) comprising (A) Inorganic particles, organic particles, or a mixture or composite thereof, wherein the particles are cocoon-shaped (B) a non-ionic surfactant, (C) a carbonate or hydrogen carbonate salt, (D) an alcohol, and (M) an aqueous medium.
    Type: Grant
    Filed: July 2, 2013
    Date of Patent: March 17, 2015
    Assignee: BASF SE
    Inventors: Robert Reichardt, Yuzhuo Li, Michael Lauter, Wei Lan William Chiu
  • Patent number: 8974692
    Abstract: Provided are novel chemical mechanical polishing (CMP) slurry compositions for polishing copper substrates and method of using the CMP compositions. The CMP slurry compositions deliver superior planarization with high and tunable removal rates and low defects when polishing bulk copper layers of the nanostructures of IC chips. The CMP slurry compositions also offer the high selectivity for polishing copper relative to the other materials (such as Ti, TiN, Ta, TaN, and Si), suitable for through-silicon via (TSV) CMP process which demands high copper film removal rates.
    Type: Grant
    Filed: June 27, 2013
    Date of Patent: March 10, 2015
    Assignee: Air Products and Chemicals, Inc.
    Inventors: Xiaobo Shi, Krishna Murella, James Allen Schlueter, Jae Ouk Choo
  • Patent number: 8974680
    Abstract: A pattern forming method includes forming a coating film containing a hydrophilic first homopolymer having a first bonding group and a hydrophobic second homopolymer having a second bonding group capable of bonding with the first bonding group, forming a bond between the first and second bonding group to produce a block copolymer of the first and second homopolymers, and heating the coating film to microphase-separating the copolymer into a hydrophilic domain and a hydrophobic domain. The hydrophilic and hydrophobic domains are arranged alternately. The bond is broken, then selectively dissolving-removing either domain by a solvent to provide a polymer pattern of a remainder domain.
    Type: Grant
    Filed: March 21, 2012
    Date of Patent: March 10, 2015
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hiroki Tanaka, Ryosuke Yamamoto, Naoko Kihara
  • Patent number: 8974561
    Abstract: A manufacturing method of a glass substrate for a magnetic disk is provided whereby nano pits and/or nano scratches cannot be easily produced in polishing a principal face of a glass substrate using a slurry containing zirconium oxide as an abrasive. The manufacturing method of a glass substrate for a magnetic disk includes, for instance, a polishing step of polishing a principal face of a glass substrate using a slurry containing, as an abrasive, zirconium oxide abrasive grains having monoclinic crystalline structures (M) and tetragonal crystalline structures (T).
    Type: Grant
    Filed: September 26, 2012
    Date of Patent: March 10, 2015
    Assignee: Hoya Corporation
    Inventors: Masanori Tamaki, Hiroki Nakagawa, Yoshihiro Tawara
  • Patent number: 8969204
    Abstract: The present invention relates to a CMP slurry that is able to reduce dishing generation, when it is applied to polishing or planarization of silicon oxide layer, for example, and a polishing method. The CMP slurry includes a polishing abrasive, a linear anionic polymer, a compound including a phosphoric acid group, and water, and the ratio of CMP polishing speed to a silicon oxide layer: CMP polishing speed to a silicon nitride layer is 30:1 to 50:1.
    Type: Grant
    Filed: March 3, 2009
    Date of Patent: March 3, 2015
    Assignee: LG Chem, Ltd.
    Inventors: Jong-Pil Kim, Seung-Beom Cho, Jun-Seok Noh, Jang-Yul Kim