Abstract: There is provided an apparatus for polishing, comprising a polishing table configured to support and rotate a polishing pad; a holder configured to hold an object and press the object against the polishing pad; a polishing solution supply device provided with a contact member and configured to supply a polishing solution to an opening in a bottom face of the contact member in a state that the contact member comes into contact with or is adjacent to the polishing pad, thereby spreading the polishing solution on the polishing pad, the polishing solution supply device causing at least part of used polishing solution returned by rotation of the polishing pad to be dammed up by the contact member and setting the contact member either in a direction of keeping the dammed up polishing solution on the polishing pad or in a direction of discharging the dammed up polishing solution, according to an angle of the polishing solution supply device with respect to a radial direction of the polishing pad; an arm linked with

Abstract: A semiconductor device manufacturing jig for electroplating a substrate includes a conductive member. The substrate includes an inner part including a first surface, and an outer rim part surrounding the inner part. The outer rim part has a ring shape that protrudes further than the first surface in a direction perpendicular to the first surface. The conductive member causes a current to flow in the inner part by contacting a portion of the first surface of the inner part without contacting the outer rim part.

Abstract: A polishing apparatus includes a rotatable head body having a pressing surface, a retainer ring configured to press a polishing surface while rotating together with the head body, a stationary ring, local load applying devices configured to apply a local load to the stationary ring, and a controller. The local load applying devices include a first pressing member and a second pressing member connected to the stationary ring. The first pressing member is disposed in the upstream side of the retainer ring in the traveling direction of the polishing surface, and the second pressing member is disposed in the downstream side. The controller calculates the inclination angle of the stationary ring based on a measured value of the height of at least one of the first pressing member and the second pressing member.

Abstract: Provided is a top ring that ensures uniformly pressing a substrate against a polishing pad. A top ring 302 for holding a substrate WF includes a base member 301 coupled to a top ring shaft 18, an elastic film 320 that is mounted to the base member 301 and forms a pressurization chamber 322 for pressurizing the substrate WF between the base member 301 and the elastic film 320, a substrate suction member 330 that includes a porous member 334 including a substrate suction surface 334a for suctioning the substrate WF and a pressure reducing portion 334b communicating with a pressure reducing unit 31. The substrate suction member 330 is held to the elastic film 320.

Abstract: A retaining ring includes a generally annular body having an inner surface to constrain a substrate, an outer surface, and a bottom surface. The bottom surface has a plurality of channels extending from the outer surface to the inner surface and a plurality of islands separated by the channels and providing a contact area to contact a polishing pad. Each channel includes a recessed region adjacent the outer surface such that the channel is deeper in the recessed region than in a remainder of the channel. The recessed region and the remainder of the channel each have substantially uniform depth.

Abstract: Some embodiments relate to a carrier head. The carrier head includes a housing configured to enclose a wafer, wherein the housing includes a retaining ring recess configured to circumferentially surround the wafer. A retaining ring, which includes a first ring-shaped layer and a second ring-shaped layer, is disposed in the retaining ring recess. The second ring-shaped layer is disposed deeper in the retaining ring recess than the first ring-shaped layer and separates the first ring-shaped layer from a bottom of the retaining ring recess. A hardness of the second ring-shaped layer is less than a hardness of the first ring-shaped layer.

Abstract: A method of fabricating a connection structure is disclosed. The method includes providing a substrate that has a top surface and includes a set of pads for soldering, each of which has a pad surface exposed from the top surface of the substrate. The method also includes applying a surface treatment to a part of the top surface of the substrate close to the pads and the pad surface of each pad so as to make at least the part of the top surface and the pad surfaces of the pads rougher. The surface treatment includes sandblasting.

Abstract: A substrate processing apparatus for processing a substrate includes a setting device that sets a plurality of recipe items including operation conditions of the substrate processing apparatus and a recipe generating device that acquires a plurality of recipe models obtained by changing values of the plurality of recipe items and experimenting or simulating a processing result of the substrate and analyzes the plurality of recipe models to generate a recipe, the recipe generating device combining a part or all of the plurality of recipe models to generate the recipe such that a calculation value of a processing result of the substrate by the recipe satisfies a predetermined condition.

Abstract: An apparatus for processing a substrate is disclosed. The apparatus includes a polishing section configured to polish a substrate, a transfer mechanism configured to transfer the substrate, and a cleaning section configured to clean and dry the polished substrate. The cleaning section has plural cleaning lines for cleaning plural substrates. The plural cleaning lines have plural cleaning modules and plural transfer robots for transferring the substrates.

Abstract: A polishing system is provided, including a carrier with an offset distance. The offset distance allows a shifted carrier head to cover more surface area of the polishing surface. The offset distance effectively provides an additional rotation of the carrier head about the axis, which allows for a greater area traversed on the polishing surface, improving chemical mechanical polishing uniformity on the substrate.

Abstract: Methods and systems are provided for a sensor assembly for a differential apparatus. In one example, the sensor assembly includes a microcontroller and an eddy current sensor communicatively coupled to the microcontroller and configured to detect a distance between an axially slidable and an axially stationary component of a differential apparatus.

Abstract: A retaining ring can be shaped by machining or lapping the bottom surface of the ring to form a shaped profile in the bottom surface. The bottom surface of the retaining ring can include flat, sloped and curved portions. The lapping can be performed using a machine that dedicated for use in lapping the bottom surface of retaining rings. During the lapping the ring can be permitted to rotate freely about an axis of the ring. The bottom surface of the retaining ring can have curved or flat portions.

Abstract: Some embodiments relate to a method of using a polishing system. In this method, a wafer is secured in a carrier head. The carrier head includes a housing, which includes a retaining ring recess, enclosing the wafer. A retaining ring is positioned in the retaining ring recess. The retaining ring surrounds the wafer, and has a hardness ranging from about 5 shore A to about 80 shore D. The wafer is pressed against a polishing pad, and at least one of the carrier head or the polishing pad is moved relative to the other.

Abstract: A carrier head includes a housing configured to enclose a wafer, wherein the housing includes a retaining ring recess. The carrier head includes a retaining ring positioned in the retaining ring recess, the retaining ring configured to surround the wafer. The retaining ring has a hardness ranging from about 5 shore A to about 80 shore D. A method of using a polishing system includes securing a wafer in a carrier head. The carrier head includes a housing enclosing the wafer, wherein the housing includes a retaining ring recess. The carrier head includes a retaining ring in the retaining ring recess. The retaining ring has a hardness ranging from about 5 shore A to about 80 shore D. The method includes pressing the wafer against a polishing pad, and moving at least one of the carrier head or the polishing pad relative to the other.

Abstract: A polishing head assembly for single side polishing of silicon wafers is provided. The polishing head assembly includes a polishing head and a cap. The polishing head has a recess along a bottom portion, the recess having a recessed surface. The cap is positioned within the recess, and has an annular wall and a floor extending across the annular wall. The floor is spaced from the recessed surface to form a chamber therebetween. The chamber is configured to be pressurized for deflecting the floor. The annular wall is attached to the polishing head with an adhesive.

Abstract: A retainer ring for chemical-mechanical polishing or other processes includes an outside ring and an inside ring that is attached to the outside ring. The inside ring is softer than the outside ring in hardness.

Abstract: Systems and methods for correcting slider parallelism error using compensation lapping are described. One such system includes a lapping support including at least one mounting surface having a preselected mounting angle such that a line normal to the at least one mounting surface is not parallel to a centerline of the lapping support, a rowbar including a plurality of magnetic transducers spaced apart along a length of the rowbar, and a lapping plate configured to lap the rowbar, where the rowbar is mounted to the at least one mounting surface, and where the rowbar is configured to be brought into contact with the lapping plate.

Abstract: Flat-surfaced workpieces such as semiconductor wafers are attached to a rotatable floating workpiece holder carrier rotor that is supported by and rotationally driven by a bellows. The rotating wafer carrier rotor is restrained by a set of idlers that are attached to a stationary housing to provide rigid support against abrading forces. The idlers allow low-friction operation of the abrading system to be provided at the very high abrading speeds used in high speed flat lapping with raised-island abrasive disks. The carrier rotor is also restrained by a rigid rotating housing to allow a limited lateral motion and also a limited angular motion. Air pressure within a sealed bellows chamber provides controlled abrading pressure for wafers or other workpieces. Vacuum can also be applied to the bellows chamber to quickly move the wafer away from the abrading surface. Wafers can be quickly attached to the workpiece carrier with vacuum.

Abstract: The present invention provides methods and apparatus for a pre-CMP semiconductor substrate buffing module. The invention includes a polishing pad assembly adapted to be rotated against a major surface of a substrate; a chuck adapted to hold the substrate and to rotate the substrate against the polishing pad assembly as the polishing pad assembly is rotated; and a lateral motion motor adapted to oscillate the polishing pad assembly laterally across the major surface of the substrate while the polishing pad assembly is rotated against the rotating substrate. Numerous additional features are disclosed.

Abstract: The present invention provides a polishing head including: an annular rigid ring; an elastic film bonded to the rigid ring; and an upward and downward movable mid-plate, the mid-plate defining a first sealed space together with the rigid ring and the elastic film; an incompressible fluid enclosed in a sealed space; and a mid-plate positioning device for adjusting vertical position of the mid-plate, to hold a back surface of a workpiece on a lower surface of the elastic film and polish a front surface by bringing the front surface into contact with a polishing pad attached to a turn table, wherein the mid-plate can adjust a shape of the lower surface of the elastic film by adjusting the vertical position of the mid-plate. The polishing head polishes a workpiece without generating surface defects on the workpiece surface and easy detachment of the workpiece from a polishing pad after polishing.

Abstract: A polishing pad used in conjunction with a carrier ring to polish a substrate and has a motion direction when polishing is provided. The carrier ring has at least one carrier groove, and the substrate has a substrate radius. The polishing pad has a polishing layer and a surface pattern. The surface pattern has traversing grooves, and an angle between the tangent line of each traversing groove and the tangent line of the motion direction is not equal to 0 degree. Each traversing groove respectively has a traversing groove trajectory corresponding to the motion direction, and the traversing groove trajectory of the traversing groove has a trajectory width smaller than the substrate radius. At leading region of the carrier ring corresponding to the motion direction, the traversing grooves have at least one carrier compatible groove which aligns with the at least one carrier groove of the carrier ring.

Abstract: A two-piece locking nut assembly for securing a mantle to a head assembly of a cone crusher. The two-piece locking nut assembly includes an inner nut and an outer nut. The inner nut includes a set of axial bores that each receive a jackscrew. Once the locking nut assembly is in position on the head assembly, the series of jackscrews are tightened to exert a force on the mantle that is counteracted by forces through the inner nut and into the head to create a locking force between the locking nut assembly and the head assembly. The outer nut is turned along the inner nut to hold the locking nut assembly in place. Once the outer nut is moved into position, the jackscrews are removed such that the outer nut continues to apply the locking force between the mantle and the head through the locking nut assembly.

Abstract: A polishing head of a chemical mechanical polishing apparatus includes a housing moving up and down, a base assembly connected to a bottom of the housing to support the housing, a membrane on a bottom of the base assembly and a retainer ring surrounding the membrane and connected to the bottom of the base assembly, the membrane including a pressing portion to adsorb and press a substrate, a first partition on the pressing portion and extending from an edge of the pressing portion along a height direction, a first horizontal extending portion extending from an upper end portion of the first partition toward a center of the membrane, and a second horizontal extending portion from the upper end portion of the first partition toward the center of the membrane, the second horizontal extending portion being above the first horizontal extending portion and including a curved portion expanding by pneumatic pressure.

Abstract: A chemical mechanical polishing apparatus includes a platen configured to support and rotate a wafer, and a polishing pad facing the platen. The polishing pad includes a body having a groove with a rotational symmetric pattern.

Abstract: A retainer ring for chemical-mechanical polishing or other processes includes an outside ring and an inside ring that is attached to the outside ring. The inside ring is softer than the outside ring in hardness.

Abstract: A polishing system for polishing a flat face of a rock comprises a polishing surface, a fence system, and a drive system. The polishing surface is supported for rotation about a primary rotation axis. The fence system is supported above the polishing surface. The drive system causes the polishing surface to rotate about the primary rotation axis and displace a driven portion of the fence system along a path relative to the primary rotation axis. The fence system engages the rock to prevent the polishing surface from causing the rock to move about the primary rotation axis and to cause the rock to move towards and away from the primary rotation axis.

Abstract: A retainer ring is provided for use in conjunction with Chemical Mechanical Polishing apparatus which polishing is used to polish a substrate. Particularly, the retainer ring includes an inner surface defining a retainer area, an outer surface, a front surface extending between the inner and outer surface, the front surface being in contact with the polishing pad during polishing and a transition region between the outer surface and the front surface. A CMP apparatus which includes at least a ring having the above features is also provided for.

Abstract: Embodiments of the present invention relate to apparatus and method for improve uniformity of a polishing process. Embodiments of the present invention provide a heating mechanism configured to apply thermal energy to a perimeter of a substrate during polishing, or a cooling mechanism configured to cool a central region of the substrate during polishing, or a biased heating mechanism configured to create a temperature step differential on a given radius of a polishing pad.

Abstract: Disclosed is a wafer support member including a base substrate, a support adhered at a predetermined width to the edge of the base substrate, the support having a round outermost part, and a coating layer provided on the outermost edge of the support.

Abstract: An improved retaining ring used for chemical mechanical polishing of substrates, such as semiconductor wafers, to hold a substrate in place during the polishing process. The retaining rings are configured with inserts through which fasteners are positioned to securely affix the retaining ring to the polishing head. The inserts assist in dissipating the force of the fasteners, thereby allowing a more uniform polishing surface. The opening through which the fastener is positioned may be configured with concave or convex side walls to assist in dissipating the force of the fasteners during installation of the retaining ring or the polishing process.

Abstract: A carrier head for chemical mechanical polishing that has a base, a mounting assembly connected to the base having a surface for contacting a substrate, and a retaining ring secured to the base. The retaining ring can include perfluoroalkoxy, polyetherketoneketone, polybenzimidazole, a semi-crystalline thermoplastic polyester, or a long molecular chain molecule produced from poly-paraphenylene terephthalamide.

Abstract: An improved retaining ring used for chemical mechanical polishing of substrates, such as semiconductor wafers, to hold a substrate in place during the polishing process. The retaining rings are configured with inserts through which fasteners are positioned to securely affix the retaining ring to the polishing head. The inserts assist in dissipating the force of the fasteners, thereby allowing a more uniform polishing surface. The opening through which the fastener is positioned may be configured with concave or convex side walls to assist in dissipating the force of the fasteners during installation of the retaining ring or the polishing process.

Abstract: A template for polishing Silicon Carbide, Sapphire, Germanium, Silicon and pattern wafers having a slurry inlet, channels, outlets and pockets for holding said wafers terminating in peripheral vacuum ports in order to facilitate an efficient flow of slurry over the semiconductor wafers during a polishing process.

Abstract: A method of polishing a substrate includes rotating a polishing table having a polishing surface, holding the substrate by a top ring, bringing the substrate into contact with the polishing surface while swinging and rotating the top ring to polish the substrate, and monitoring a surface condition of the substrate by a monitoring sensor. A rotational speed of the polishing table and conditions of swing motion of the top ring are determined such that a position of the monitoring sensor, a position of a center of rotation of the top ring, and a direction of the swing motion of the top ring at a point of time when a predetermined period of time has elapsed after polishing of the substrate is started approximately coincide with their previous values at a point of time before the predetermined period of time has elapsed.

Abstract: A polishing apparatus is used for polishing a substrate such as a semiconductor wafer to a flat mirror finish. The polishing apparatus includes a polishing table (100) having a polishing surface (101a), a top ring body (2) configured to hold and press a substrate against the polishing surface (101a), and a retainer ring (3) provided at an outer peripheral portion of the top ring body (2) and configured to press the polishing surface (101a). A fulcrum for receiving a lateral force applied from the substrate to the retainer ring (3) during polishing of the substrate is located above a central portion of the substrate.

Abstract: Retaining rings are presented with specially designed inserts that increase rigidity and improve heat dissipation. Inserts that are more rigid, and that have better ability to conduct heat, are inserted into pockets positioned along the outer portion of the rings. The pockets do not compromise the upper, lower or inner portion of the rings. Because the inserts are more rigid than the material used in the body of the ring, they absorb the deforming forces resulting from fastening the ring to the carrier head. Because they are better conductors than the material used in the body of the ring, the ring is better able to dissipate heat generated during polishing. Moreover, because the inserts are positioned in the outer portion of the ring, the inserts are not exposed to the polishing surface during polishing and therefore are less likely to react undesirably with the chemicals used during polishing.

Abstract: A polishing apparatus detects the escape of a substrate from a top ring during polishing. The polishing apparatus includes a polishing table having a polishing pad, a top ring, and a substrate escape detection section for detecting escape of the substrate from the top ring. The detection section includes a light irradiation member for irradiating an area of the upper surface of the polishing pad with light, a controller for controlling the light irradiation of the light irradiation member, an image-taking member for taking an image of the area irradiated with the light, and an information processing member for processing information outputted from the image-taking member. The controller controls the light irradiation member in such a manner that it performs light irradiation at least for a period of time during which the substrate is regarded as being in contact with the polishing pad.

Abstract: A polishing apparatus is used for polishing a substrate such as a semiconductor wafer to a flat mirror finish. The polishing apparatus includes a polishing table having a polishing surface, a top ring body configured to hold and press a substrate against the polishing surface, a retainer ring provided at an outer peripheral portion of the top ring body and configured to press the polishing surface, and a retainer ring guide fixed to the top ring body and configured to be brought into sliding contact with a ring member of the retainer ring to guide a movement of said ring member. Either one of sliding contact surfaces of the ring member and the retainer ring guide which are brought into sliding contact with each other comprises a low friction material.

Abstract: A polishing apparatus is used for polishing a substrate such as a semiconductor wafer to a flat mirror finish. The polishing apparatus includes a polishing table having a polishing surface, a polishing head having at least one elastic membrane configured to form a plurality of pressure chambers for being supplied with a pressurized fluid, and a controller configured to control supply of the pressurized fluid to the pressure chambers. The controller controls supply of the pressurized fluid so that the pressurized fluid is supplied first to the pressure chamber located at a central portion of the substrate when the substrate is brought into contact with the polishing surface, and then the pressurized fluid is supplied to the pressure chamber located at a radially outer side of the pressure chamber located at the central portion of the substrate.

Abstract: Retaining rings with curved surfaces are described. The curved surfaces prevent damage to a fixed abrasive polishing pad when the retaining ring is used in a polishing process. The curved surfaces are on the bottom surface of the ring, such as along the outer diameter and/or along the sidewalls of channels formed in the bottom of the ring.

Abstract: A carrier head for a chemical mechanical polishing apparatus includes a retaining ring having a flexible lower portion and a rigid upper portion.

Abstract: An improved chemical mechanical polishing retaining ring. A representative embodiment comprises a base portion made from a wear-resistant plastic material, and an upper portion, or backbone portion, made from a stiffer and more wear resistant material. One of the base or backbone portion is preferably overmolded onto the other. The base portion can be generally defined by a flat pad-contacting surface, an outer surface, and an inner surface. The base portion can additionally include channels extending from the outer surface to the inner surface to facilitate transfer of slurry to and from the substrate to be polished during the process. One or both of the base portion or backbone portion further includes a plurality of circular ribs that serve to create additional bonding surface with the overmolded material. The retaining ring may additionally includes a plurality of bosses with threaded insert holes by which the retaining ring is attached to a chemical mechanical polishing system.

Abstract: An improved chemical mechanical polishing retaining ring. A representative embodiment comprises a base portion made from a wear-resistant plastic material, and an upper portion, or backbone portion, made from a stiffer and more wear resistant material. One of the base or backbone portion is preferably overmolded onto the other. The base portion can be generally defined by a flat pad-contacting surface, an outer surface, and an inner surface. The base portion can additionally include channels extending from the outer surface to the inner surface to facilitate transfer of slurry to and from the substrate to be polished during the process. One or both of the base portion or backbone portion further includes a plurality of circular ribs that serve to create additional bonding surface with the overmolded material. The retaining ring may additionally includes a plurality of bosses with threaded insert holes by which the retaining ring is attached to a chemical mechanical polishing system.

Abstract: One embodiment provides a retaining ring assembly. The retaining ring assembly comprises a retaining ring configured to circumferentially surround and retain the substrate within an inner surface of the retaining ring, and a flexure coupled to the retaining ring. The flexure is configured to maintain a gap between an inner surface of a carrier ring and an outer surface of the retaining ring, and the carrier ring is circumferentially surrounding the retaining ring.

Abstract: An apparatus and method for polishing objects, such as semiconductor wafers, uses at least one object cleaner, which may be a movable object cleaner. The movable object cleaner allows access to different parts of the apparatus for maintenance.

Abstract: A polishing apparatus comprises a polishing plate (24), an abrasive cloth (25) attached to the surface of the polishing plate (24), a chuck (19) for holding and pressing one surface of a wafer (39) against the abrasive cloth (25), and a circular retaining ring (23) concentrically arranged on the periphery of the chuck (19). The retaining ring (23) is rotatable and vertically movable with respect to the chuck (19), and is pressed against the abrasive cloth (25) during the lapping step. The retaining ring (23) is lifted upward during the final polishing step, thereby preventing lapping grains from being brought into the final polishing stage. Accordingly, lapping and final polishing can be successively conducted using the same polishing head. With this structure, cost cutting of the apparatus can be realized, since lapping and final polishing are successively conducted using the same polishing head without bringing the lapping grains used for lapping into the final polishing stage.

Abstract: Semiconductor wafers have a front surface, a back surface, a notch, and an edge. A method of polishing a wafer includes polishing at least one of the surfaces and the notch of the wafer using a polishing pad and slurry. At least one surface of the wafer is cleaned of residual slurry. The cleaned surface is grasped by applying a vacuum to the cleaned surface of the wafer using a vacuum chuck. Edge of the wafer is polished using a pad and slurry while the wafer is grasped by the vacuum chuck.

Abstract: The present invention offers a device for rendering CMP polishing pads easily and temporarily removable from and replaceable upon the platen of a CMP polishing apparatus comprising two sheets, the upper sheet attached to the said CMP polishing pad and the lower attached to the said platen, the said two sheets held together by pegs, pins or protrusions fitted to matching holes in the upper surface of the lower sheet and the lower surface of the upper sheet, said pegs or pins attached to either the upper or lower sheet and able to enter the hold on the adjoining sheet when the sheets are brought together and hold the sheets together by means of the sliding friction attendant upon a tight fit with the said holes. The device allows far easier metrology and storage of CMP polishing pads at different stages of use with no damage to the CMP pad, which may be put back into service at any time.

Abstract: A carrier head for a chemical mechanical polishing apparatus includes a retaining ring having a flexible lower portion and a rigid upper portion.

Abstract: A polishing apparatus comprises a polishing plate (24), an abrasive cloth (25) attached to the surface of the polishing plate (24), a chuck (19) for holding and pressing one surface of a wafer (39) against the abrasive cloth (25), and a circular retaining ring (23) concentrically arranged on the periphery of the chuck (19). The retaining ring (23) is rotatable and vertically movable with respect to the chuck (19), and is pressed against the abrasive cloth (25) during the lapping step. The retaining ring (23) is lifted upward during the final polishing step, thereby preventing lapping grains from being brought into the final polishing stage. Accordingly, lapping and final polishing can be successively conducted using the same polishing head. With this structure, cost cutting of the apparatus can be realized, since lapping and final polishing are successively conducted using the same polishing head without bringing the lapping grains used for lapping into the final polishing stage.