Abstract: A belt sander is disclosed that may include a sanding assembly having a first roller and a second roller, the sanding assembly being configured to receive a sanding belt around the first roller and the second roller to define a sanding surface therebetween. The belt sander may include a motor operationally coupled to the sanding assembly and opposite the sanding surface, the motor being configured to rotate at least the first roller and thereby rotate the sanding belt around the first roller and the second roller, as well as a handgrip formed around at least a portion of the motor and substantially encasing the motor.

Abstract: A retaining ring for a chemical mechanical polishing tool comprises a pad side surface. The pad side surface has an edge portion adjacent its outer circumference. A surface normal of the edge portion and a surface normal of the pad side surface include an acute angle. Additionally, or alternatively, the retaining ring may comprise at least one groove extending from an inner circumference of the pad side surface to the outer circumference of the pad side surface. The groove comprises at least one edge portion adjacent the pad side surface. A surface normal of the at least one edge portion and a surface normal of the pad side surface include an acute angle.

Abstract: A polishing pad for use in chemically mechanically polishing a semiconductor substrate enhances the uniformity of the rate at which material is removed from the surface of the semiconductor substrate, thereby ensuring the reproducibility of the chemical mechanical polishing process. The polishing pad has main grooves that divide an upper portion of the pad into a plurality of cells. At least one of the cells includes a land portion and a grooved portion substantially enclosed by the land portion. A respective slurry hole extends through the pad to the grooved portion such that slurry supplied through the slurry hole feeds into the grooved portion but is impeded by the land portion from flowing outwardly of the cell.

Abstract: A polishing method can automatically reset polishing conditions according to a state of a polishing member based on data on a polishing profile changing with time, thereby extending life of the polishing member and obtaining flatness of a polished surface with higher accuracy. The polishing method, includes steps of: independently applying a desired pressure by each of pressing portions of a top ring on a polishing object; estimating a polishing profile of the polishing object based on set pressure values, and calculating a recommended polishing pressure value so that a difference between the polishing profile of the polishing object after it is polished under certain polishing conditions and a desired polishing profile becomes smaller; and polishing the polishing object with the recommended polishing pressure value.

Abstract: The edge effect or variation in polishing edge profile on a substrate undergoing CMP is reduced by structuring a retaining ring, housed in a carrier head for retaining the substrate, such that the polishing edge profile shifts back and forth with respect to the center of the substrate. Embodiments include structuring the retaining ring such that the width between inner and outer surfaces varies by an amount sufficient to compensate for polishing edge profile variation. Embodiments also include structuring the retaining ring such that the distance from the outer surface to the geometric inner surface varies. Embodiments further include structuring the retaining ring such that the distance between the outer surface to the perimeter of the substrate retained by the inner surface of the retaining ring varies.

Abstract: A technique of the present invention utilizes qualification characteristics from a single wafer for qualifying a semiconductor manufacturing tool. Generally speaking, the technique commences with the processing of a wafer by the manufacturing tool. During processing, one or more qualification characteristics required to properly qualify the tool are measured using an in situ sensor or metrology device. Subsequently, the manufacturing tool is qualified by adjusting one or more parameters of a recipe in accordance with the qualification characteristics measured from the wafer to target one or more manufacturing tool specifications. In some embodiments, the tool to be qualified includes a bulk removal polishing platen, a copper clearing platen and a barrier removal polishing platen.

Abstract: A method and apparatus for planarizing a microelectronic substrate. In one embodiment, one surface of the microelectronic substrate is engaged with a planarizing pad and the opposite surface of the microelectronic substrate is positioned proximate to a substrate support. A bearing liquid, such as a planarizing liquid, is directed toward the second surface of the microelectronic substrate to form a liquid bearing between the substrate and substrate support. The microelectronic substrate can precess relative the substrate support as the substrate support moves relative to the planarizing pad. The substrate support can include a sensor to determine a characteristic, such as a thickness, of the liquid bearing. In another embodiment, a portion of the liquid bearing can be removed from the second surface of the microelectronic substrate to control the thickness of the liquid bearing and/or to remove particulate matter from the liquid bearing.

Abstract: A carrier head for chemical mechanical polishing that has a base having at least a portion formed of a polymer, a mounting assembly connected to the base having a surface for contacting a substrate, a retainer secured to the portion of the base to prevent the substrate from moving along the surface, and a dampening material secured between the retainer and the base.

Abstract: Method and apparatus are provided for polishing substrates comprising conductive and low k dielectric materials with reduced or minimum substrate surface damage and delamination. In one aspect, a method is provided for processing a substrate including positioning a substrate having a conductive material form thereon in a polishing apparatus having a rotational carrier head and a rotatable platen, wherein the substrate is disposed in the rotational carrier head and the platen has a polishing article disposed thereon, rotating the first carrier head at a first carrier head rotational rate and rotating a platen at a first platen rotational rate, contacting the substrate and the polishing article, accelerating the first carrier head rotational rate to a second carrier head rotational rate and accelerating the first platen rotational rate to a second platen rotational rate, and polishing the substrate at the second carrier head rotational rate and at the second platen rotational rate.

Abstract: The method of sucking water is capable of easily removing excess water included in a backing member adhered on a plate of a polishing apparatus. In the method, the excess water is removed from the backing member by the steps of: pressing a water absorbing member onto a holding surface of the backing member, on which the work piece is adhered and held, so as to absorb the excess water from the backing member; and sucking the excess water absorbed by the water absorbing member.

Abstract: A method and apparatus for chemical mechanical polishing includes a platen supports a polishing article, a robot located proximate the platen, a carrier head having a retaining ring, and a carrier heads support mechanism. The robot is configured to position a substrate on the polishing article, and the carrier heads support mechanism is configured to move the carrier head into a position that the retaining ring surrounds the substrate.

Abstract: A polishing apparatus can detect completion of initialization of a polishing pad quantitatively. The polishing apparatus has a polishing table having a polishing pad attached thereto and a substrate holder configured to bring a surface of a substrate into contact with the polishing pad and press the substrate against the polishing pad. The polishing apparatus also has a drive mechanism operable to drive at least one of the polishing table and the substrate holder so as to provide a relative movement between the polishing pad and the substrate. The polishing apparatus includes a current sensor operable to detect a drive current supplied to the driving mechanism. The polishing apparatus also includes a polishing pad condition detector operable to detect a condition of the polishing pad based on the drive current detected by the current sensor when the dummy substrate is polished by a relative movement between the polishing pad and a dummy substrate held by the substrate holder.

Abstract: A method and apparatus for polishing a thin film on a semiconductor substrate is described. A polishing pad is rotated and a wafer to be polished is placed on the rotating polishing pad. The polishing pad has grooves that channels slurry between the wafer and polishing pad and rids excess material from the wafer, allowing an efficient polishing of the surface of the wafer. The polishing pad smoothes out due to the polishing of the wafer and must be conditioned to restore effectiveness. A conditioning assembly with a plurality of diamonds is provided. The diamonds have predetermined angles that provide strength to the diamond. This allows for an optimal rotation speed and downward force in effective conditioning of the polishing pad, while reducing diamond fracture rate.

Abstract: There is provided a substrate polishing machine which comprises a polishing surface and a substrate carrier for holding a substrate and bringing it into contact with the polishing surface. The substrate carrier comprises a carrier body, a substrate holding member for holding a substrate with a surface of the substrate to be polished being directed towards the polishing surface. The substrate holding member is mounted on the carrier body in such a manner that the substrate holding member is movable both towards and away from the polishing surface. The substrate polishing machine further comprises a substrate holding member positioning device provided on a side of the substrate holding member opposite to that used for holding the substrate. The substrate holding member positioning device has a flexible member which defines a chamber, and which, upon introduction of a non-compressible fluid, is expanded in a direction towards the polishing surface.

Abstract: The carrier head has a base and a substrate backing structure for holding a substrate against a polishing surface during polishing. The substrate backing structure is connected to the base and includes an external surface that contacts a backside of the substrate during polishing. The substrate backing structure also includes a resistive heating system to distribute heat over an area of the external surface and at least one thermally conductive membrane. The external surface is a first surface of the at least one thermally conductive membrane, and the resistive heating system is integrated within one of the at least one thermally conductive membrane.

Abstract: A chemical mechanical polishing apparatus and method can use an eddy current monitoring system and an optical monitoring system. Signals from the monitoring systems can be combined on an output line and extracted by a computer. The eddy current monitoring system or the optical monitoring system can be used to determine the substrate edge. A focusing optic can be used to improve the accuracy of the optical monitoring system in detecting the edge of the substrate.

Abstract: An apparatus for planarizing a work piece includes an easily assembled work carrier. The carrier includes a carrier insert having a work piece bladder clamped to a carrier backing plate with a plurality of clamps to form a plurality of web plenums. The outer edge of the bladder is supported by a rib that is coupled to a carrier plenum. By adjusting the pressure in the carrier plenum, the pressure exerted on the edge of a work piece during a planarization operation can be adjusted. The carrier also includes a floating wear ring that surrounds the work piece bladder and a work piece mounted on that bladder. By adjusting the force exerted by the wear ring on a polishing pad, independently of the pressure exerted by the rib at the edge of the bladder, the material removal rate near the edge of the work piece can be controlled.

Abstract: A wafer polishing apparatus for polishing a semiconductor wafer. The polisher comprises a base (23), a turntable (27), a polishing pad (29) and a drive mechanism (45) for driven rotation of a polishing head (63). The polishing head is adapted to hold at least one wafer (35) for engaging a front surface of the wafer with a work surface of the polishing pad. A spherical bearing assembly (75) mounts the polishing head (63) on the drive mechanism for pivoting of the polishing head about a gimbal point (p) lying no higher than the work surface when the polishing head holds the wafer in engagement with the polishing pad. This pivoting allowing the plane of the front surface of the wafer to continuously align itself to equalize polishing pressure over the front surface of the wafer, while rotation of the polishing head is driven by the driving mechanism.

Abstract: A planarization method includes providing a Group VIII metal-containing surface (preferably, a platinum-containing surface) and positioning it for contact with a fixed abrasive article in the presence of a planarization composition, wherein the fixed abrasive article comprises a plurality of abrasive particles having a hardness of no greater than about 6.5 Mohs dispersed within a binder adhered to at least one surface of a backing material.

Abstract: The invention relates to a method for machining a workpiece surface, wherein an area to be machined of the workpiece surface is machined under the influence of a polishing operation and wherein, during the machining, the displacement of the area to be machined relative to a reference area rigidly coupled to the workpiece surface is monitored by means of interferometry. The invention further relates to a machining apparatus, comprising a polishing tool and a measuring tool, while the measuring tool comprises an interferometer. Preferably, the polishing tool comprises a fluid jet polishing device.

Abstract: It is provided a polishing pad of novel construction capable of controlling actively and efficiently a slurry flow during polishing a surface of a semiconductor substrate, such as a wafer, thus making it possible to precisely and stably performing a desired polishing process. Onto a surface of a pad substrate 12 of synthetic resin material, formed is a groove 16 extending approximately circumferentially. An inner circumferential wall surface 20 and an outer circumferential wall surface 22 are made parallel to each other and slant with respect to a center axis 18 of the pad substrate 12.

Abstract: A wafer polishing head utilizes a wafer backing member having a wafer facing pocket which is sealed against the wafer and is pressurized with air or other fluid to provide a uniform force distribution pattern across the width of the wafer inside an edge seal feature at the perimeter of the wafer to urge (or press) the wafer uniformly toward a polishing pad. Wafer polishing is carried out uniformly without variations in the amount of wafer material across the usable area of the wafer. A frictional force between the seal feature of the backing member and the surface of the wafer transfers rotational movement of the head to the wafer during polishing. A pressure controlled bellows supports and presses the wafer backing member toward the polishing pad and accommodates any dimensional variation between the polishing head and the polishing pad as the polishing head is moved relative to the polishing pad.

Abstract: This invention pertains to a polishing apparatus for polishing a semiconductor wafer. The apparatus comprises a storage section that is capable of receiving a workpiece to be polished and a polished workpiece. The polishing unit that polishes the workpiece includes a primary polishing table and a secondary polishing table, wherein the polishing surface of the secondary polishing table is constructed to be arranged such that at least a portion of a surface of the workpiece being polished by the polishing surface of the secondary polishing table extends beyond an edge of the polishing surface of the secondary polishing table. Also provided is a film thickness measuring device, which measures the thickness of a film formed on a polished workpiece while the polished workpiece is held by a top ring above a pusher.

Abstract: A system includes a measuring station for positioning an eddy current probe proximate to a substrate in a substrate holder. The probe can produce a time-varying magnetic field, in order to induce eddy currents in one or more conductive regions of a substrate either prior to or subsequent to polishing. The eddy current signals are detected, and may be used to update one or more polishing parameters for a chemical mechanical polishing system. The substrate holder may be located in a number places; for example, in a substrate transfer system, a factory interface module, a cleaner, or in a portion of the chemical mechanical polishing system away from the polishing stations. Additional probes may be used.

Abstract: A chemical mechanical polishing apparatus and method can use an in-situ monitoring system. A measurement of a position of a carrier head and a sinusoidal first function can be used to define a second function that associates measurements from the series with positions on the substrate. For each measurement in a series from the in-situ monitoring system, the second function can be used to determine a position on the substrate where the measurement was taken. In addition, a measurement of the position of the carrier head, a time when the measurement of the substrate property is made, and a phase correction representing lag resulting from a processing delay in generating the measurement of the position of the carrier head can be used in determining a position on the substrate where a measurement of a substrate property was taken.

Abstract: When a wafer is pressed on a rotating polishing pad and its surface is polished, a retainer retains the periphery of the wafer to prevent the wafer from being detached from the polishing pad. The retainer includes a first ring which surrounds the wafer and contacts the polishing pad and a second ring which is provided outside the first ring in the radial direction of the wafer and contacts the polishing pad. The second ring has wear resistance that is higher than that of the first ring.

Abstract: A chemical mechanical polishing apparatus includes a platen, a polishing pad affixed to a surface of the platen, and a polishing head configured to retain and rotate a wafer while pressing a surface of the rotating wafer against the polishing pad. A first portion of the polishing pad that engages the polishing head proximate the edge of the wafer provides less rigidity than a second portion of the polishing pad that engages a portion of the surface of the wafer. For example, the polishing pad and/or the platen may have a recess or other cushioning structure positioned proximate a locus of movement of a portion of the polishing head that supports the edge of the wafer.

Abstract: A system, method, and computer program product for chemical mechanical polishing a substrate in which initially a plurality of predetermined pressures are applied to a plurality of regions of the substrate. A plurality of portions of the substrate are monitored during polishing with an in-situ monitoring system. If the difference in thickness between two portions of the substrate exceeds a predetermined threshold, a plurality of adjusted pressures are calculated in a closed-loop control system, and the plurality of adjusted pressures are applied to the plurality of regions of the substrate. The predetermined threshold includes an initial threshold for the start of the polishing process and a second threshold for a period of polishing after the start of the polishing process.

Abstract: A long-lasting retaining ring for wafer carriers used in chemical mechanical planarization. A groove is disposed around the retaining ring, with the groove opening facing the mounting plate. A ridge is disposed in the groove. A bladder is disposed in the groove and is pressed between the ridge and the mounting plate. Pressure in the bladder can be maintained or adjusted to deform the bladder and thereby force the retaining ring onto the polishing pad as the retaining ring is worn. Prior to adding pressure to the bladder, the ridge forces the bladder to very closely conform to the dimensions of the groove. Thus, during use, bladder deformation is not wasted on conforming the bladder to the groove shape, but instead can be used to force the retaining ring further in the direction of the pad. The ridge thereby increases the distance the retaining ring can move towards the pad.

Abstract: A carrier head for a chemical mechanical polishing apparatus is described. The carrier head has a base, a rigid body, a membrane and a pressurizing structure. The rigid body is movable relative to the base and includes a downwardly-extending projection. The membrane has a mounting surface for a substrate. The membrane extends below the base to provide a chamber between the base and the membrane. The pressurizing structure applies a downward pressure on the rigid body to cause a lower surface of the rigid body to press on an inner surface of the membrane.

Abstract: Method and apparatus are provided for polishing substrates comprising conductive and low k dielectric materials with reduced or minimum substrate surface damage and delamination. In one aspect, a method is provided for processing a substrate including positioning a substrate having a conductive material form thereon in a polishing apparatus having a rotational carrier head and a rotatable platen, wherein the substrate is disposed in the rotational carrier head and the platen has a polishing article disposed thereon, rotating the first carrier head at a first carrier head rotational rate and rotating a platen at a first platen rotational rate, contacting the substrate and the polishing article, accelerating the first carrier head rotational rate to a second carrier head rotational rate and accelerating the first platen rotational rate to a second platen rotational rate, and polishing the substrate at the second carrier head rotational rate and at the second platen rotational rate.

Abstract: An apparatus for planarizing a work piece includes an easily assembled work carrier. The carrier includes a carrier insert having a work piece bladder clamped to a carrier backing plate with a plurality of clamps to form a plurality of web plenums. The outer edge of the bladder is supported by a rib that is coupled to a carrier plenum. By adjusting the pressure in the carrier plenum, the pressure exerted on the edge of a work piece during a planarization operation can be adjusted. The carrier also includes a floating wear ring that surrounds the work piece bladder and a work piece mounted on that bladder. By adjusting the force exerted by the wear ring on a polishing pad, independently of the pressure exerted by the rib at the edge of the bladder, the material removal rate near the edge of the work piece can be controlled.

Abstract: Techniques for polishing a wafer (10) include closed-loop control. The wafer can be held by a carrier head (100) having at least one chamber whose pressure is controlled to apply a downward force on the wafer. Thickness-related measurements of the wafer can be obtained during polishing and a thickness profile for the wafer is calculated based on the thickness-related measurements. The calculated thickness profile is compared to a target thickness profile. The pressure in at least one carrier head chamber is adjusted based on results of the comparison. The carrier head chamber pressures can be adjusted to control the amount of downward force applied to the wafer during polishing and/or to control the size of a loading area on the wafer against which the downward force is applied.

Abstract: A carrier head for chemical mechanical polishing, includes a base, a support structure attached to the base having a surface for contacting a substrate, and a retaining structure attached to the base to prevent the substrate from moving along the surface. The retaining structure and the surface define a cavity for receiving the substrate. The retaining structure includes an upper portion in contact with the base, a lower portion, and a vibration damper separating the upper portion and the lower portion. The vibration damper, the vibration damper includes a material that does not rebound to its original shape when subjected to a deformation.

Abstract: Planarizing machines, carrier heads for planarizing machines and methods for planarizing microelectronic-device substrate assemblies in mechanical or chemical-mechanical planarizing processes. In one embodiment of the invention, a carrier head includes a backing plate, a bladder attached to the backing plate, and a retaining ring extending around the backing plate. The backing plate has a perimeter edge, a first surface, and a second surface opposite the first surface. The second surface of the backing plate can have a perimeter region extending inwardly from the perimeter edge and an interior region extending inwardly from the perimeter region. The perimeter region, for example, can have a curved section extending inwardly from the perimeter edge of the backing plate or from a flat rim at the perimeter edge. The curved section can curve toward and/or away from the first surface to influence the edge pressure exerted against the substrate assembly during planarization.

Abstract: A liquid suspension for planarizing an outer surface of a material comprises a liquid suspension medium of a specific liquid density; and a plurality of solid, contact-sensitive abrasive particles of a constant solid density and suspended in the liquid suspension medium. The liquid and solid densities are approximately the same so that the abrasive particles freely and stably suspend in the liquid suspension medium, without gravitational separation by settling down or floating up. In this way, damaging contacts of the solid abrasive particles with one another are minimized.

Abstract: A scheme for filling plugs through chemical mechanical polishing comprises depositing a malleable conductive layer over a dielectric layer having openings formed therein. The malleable conductive layer is deposited such that a liner is formed within the openings, however the openings are not completely filled. A chemical mechanical polishing process using an alumina based slurry at a neutral or slightly basic pH and no oxidizer is used to smear the malleable conductive layer sufficiently to fill the remainder of the openings in the dielectric layer forming filled or substantially filled plugs.

Abstract: A polishing apparatus for polishing a substrate comprises a turntable having a polishing surface, a substrate holder for holding a substrate and bringing the substrate into contact under pressure with the polishing surface, a dresser including a dresser tool adapted to be brought into contact under a pressure with the polishing surface to dress or condition the polishing surface and a pressure device connected to the dresser for moving the dresser between a raised position where the dresser is spaced away from the polishing surface and a dressing position where the dresser rests on the polishing surface such that the dresser tool is in contact with the polishing surface under a pressure exerted by the weight of the dresser itself, the dresser comprising a follow-up mechanism allowing each one of dressing element to move up and down relative to a flange portion so as to follow a contour of the polishing surface of the turntable.

Abstract: The invention is directed to chemical-mechanical polishing pads comprising a transparent window. In one embodiment, the transparent window comprises an inorganic material and an organic material, wherein the inorganic material comprises about 20 wt. % or more of the transparent window. In another embodiment, the transparent window comprises an inorganic material and an organic material, wherein the inorganic material is dispersed throughout the organic material and has a dimension of about 5 to 1000 nm, and wherein the transparent window has a total light transmittance of about 30% or more at at least one wavelength in the range of about 200 to 10,000 nm. In yet another embodiment, the transparent window comprises an inorganic/organic hybrid sol-gel material. In an additional embodiment, the transparent window comprises a polymer resin and a clarifying material, wherein the transparent window has a total light transmittance that is substantially higher than a window comprising only the polymeric resin.

Abstract: A method and apparatus for cleaning a web-based chemical-mechanical planarization (CMP) system. Specifically, a fluid spray bar is coupled to a frame assembly which may be mounted on a CMP system. The fluid spray bar will move along the frame assembly. As the fluid spray bar traverses the length of the frame assembly, a cleaning fluid is sprayed onto the web in order to clean the web between planarization cycles.

Abstract: A method of predicting the lapping property of a charged lapping plate uses samples with a known lap surface. The samples are lapped on the plate and a non-invasive sensor is used to determine the lapping rate under a fixed load and rotation speed. The total frictional force of the samples is measured during the lapping to calculate the friction and Preston coefficients of the plate. The samples are held in place while the plate rotates and the sensor measures the distance to the plate. The plate rotates for a specific time so that adequate removal of the pad material has occurred. The lapping rate is determined from a change in the gap distance over a time interval. The lapping rate and friction are then assessed to determine if the plate is lapping worthy.

Abstract: The present invention provides a wafer carrier that includes a plurality of concentric sealing members that provide a seal, with the outer seal independently movable to allow cleaning of a peripheral backside of the wafer to occur while the wafer is still attached to the wafer carrier, and a plurality of vacuum openings that a re disposed only adjacent to an inner side of the inner seal at a location corresponding to the backside periphery of the wafer.

Abstract: A reliable, inexpensive “back side” thinning process and apparatus therefor, capable of globally thinning an integrated circuit die to a target thickness of 10 microns, and maintaining a yield of at least 80%, for chip repair and/or failure analysis of the packaged die. The flip-chip packaged die is exposed at its backside and mounted on a lapping machine with the backside exposed. The thickness of the die is measured at at least five locations on the die. The lapping machine grinds the exposed surface of the die to a thickness somewhat greater than the target thickness. The exposed surface of the die is polished. The thickness of the die is again measured optically with high accuracy. Based on the thickness data collected, appropriate machine operating parameters for further grinding and polishing of the exposed surface are determined. Further grinding and polishing are performed. These steps are repeated until the target thickness is reached.

Abstract: Methods and systems for generating a two-dimensional map of a characteristic at relative or absolute locations of measurement spots on a specimen during polishing are provided. One method includes scanning a specimen with a measurement device during polishing to generate output signals at measurement spots on the specimen. The method may also include determining a characteristic of polishing at the measurement spots from the output signals. In addition, the method may include determining relative or absolute locations of the measurement spots on the specimen. The method may further include generating a two-dimensional map of the characteristic at the relative or absolute locations of the measurement spots on the specimen. In some embodiments, the relative locations of the measurement spots may be determined from a representative scan path of the measurement device and an average spacing between starting points on individual scans.

Abstract: Polishing pads, planarizing machines and methods for mechanical and/or chemical-mechanical planarization of microelectronic-device substrate assemblies. The polishing pads, for example, can be web-format pads, and the planarizing machines can be web-format machines. In a typical application, the web-format machines have a pad advancing mechanism and stationary table with a first dimension extending along a pad travel path, a second dimension transverse to the first dimension, and an illumination site from which a laser beam can emanate from the table. The pad advancing mechanism moves the pad along the pad travel path to replace worn portions of the pad with fresh portions. In one embodiment of the invention, a web-format polishing pad includes a planarizing medium and an optical pass-through system having a plurality of view sites through which a light beam can pass through the pad.

Abstract: The present invention relates to methods and apparatus that allow for chemical mechanical polishing using a flexible pad and variable fluid flow for variable polishing.

Abstract: A polishing apparatus for polishing a workpiece has a polishing unit and a cleaning unit. The polishing unit has a polishing table having a polishing surface thereon, and a top ring for pressing the workpiece against the polishing surface. The cleaning unit has a rotatable shaft configured to be vertically movable, a holding mechanism mounted to the rotatable shaft for detachably holding the workpiece, and a plurality of cleaning devices disposed around the rotatable shaft for cleaning the workpiece which has been polished in the polishing unit.

Abstract: A method and apparatus for improving uniformity of the rate of removal of material from the surface of a workpiece, such as semiconductor substrate, by polishing. In accordance with the invention, the workpiece is subjected to a vibratory polishing method, and optionally at least one additional polishing motion selected from rotational, oscillating, sweeping, orbital and linear polishing motions. As a result, polished workpieces, such as semiconductor wafers, have reduced surface defects, improved planarity, and are polished more uniformly over a wider area.

Abstract: A polishing apparatus for polishing a workpiece such as a semiconductor wafer has a turntable with a polishing surface, and a top ring for holding a workpiece and pressing the workpiece against the polishing surface under a first pressing. The polishing apparatus has a pressurized fluid source for supplying pressurized fluid, and a plurality of openings provided in the holding surface of the top ring for ejecting the pressurized fluid supplied from the pressurized fluid source. A plurality of areas each having the openings are defined on the holding surface so that the pressurized fluid is selectively ejectable from the openings in the respective areas.

Abstract: A polishing apparatus for polishing a workpiece such as a semiconductor wafer has a turntable with a polishing surface, and a top ring for holding a workpiece and pressing the workpiece against the polishing surface under a first pressing. The polishing apparatus has a pressurized fluid source for supplying pressurized fluid, and a plurality of openings provided in the holding surface of the top ring for ejecting the pressurized fluid supplied from the pressurized fluid source. A plurality of areas each having the openings are defined on the holding surface so that the pressurized fluid is selectively ejectable from the openings in the respective areas.