Abstract: An apparatus, as well as a method, determines an endpoint of chemical mechanical polishing a metal layer on a substrate. The method of the apparatus includes bringing a surface of a substrate into contact with a polishing pad that has a window; causing relative motion between the substrate and the polishing pad; directing a light beam through the window, the motion of the polishing pad relative to the substrate causing the light beam to move in a path across the substrate; detecting light beam reflections from the substrate and a retaining ring; generating reflection data associated with the light beam reflections; dividing the reflection data into a plurality of radial ranges; and identifying the predetermined pattern from the reflection data in the plurality of radial ranges to establish the endpoint.

Abstract: The polishing pad for a chemical mechanical polishing apparatus, and a method of making the same. The polishing pad has a covering layer with a polishing surface and a backing layer which is adjacent to the platen. A first opening in the covering layer with a first cross-sectional area and a second opening in the backing layer with a second, different cross-sectional area form an aperture through the polishing pad. A substantially transparent polyurethane plug is positioned in the aperture, and an adhesive material fixes the plug in the aperture.

Abstract: A polishing cloth mounted on a turntable is dressed by bringing a dresser in contact with the polishing cloth for restoring the polishing capability of the polishing cloth. The dressing is performed by measuring heights of a surface of the polishing cloth at radial positions of the polishing cloth in a radial direction thereof determining a rotational speed of the dresser with respect to a rotational speed of the turntable on the basis of the measured heights, and dressing the polishing cloth by pressing the dresser are rotating. The dresser has an annular diamond grain layer or an annular SiC layer.

Abstract: In a polishing apparatus having a cover body with fluid pressing mechanism, during polishing, vibration and migration of sticking portion between a retainer and a membrane generated in downstream of rotation of a polishing platen is prevented by reducing sticking force between the retainer and the membrane to less than force needed to wafer polishing with rotation of the cover body.

Abstract: In a polishing apparatus, a polishing tool including abrasive particles and a binder for bonding together the abrasive particles is pressed against a substrate to polish the substrate. The polishing apparatus has a light source for irradiating a polishing surface with light rays for weakening a bond force of the binder for bonding together the abrasive particles, and a waste matter removing mechanism for forcefully removing waste matter produced by polishing or waste matter produced by irradiation. By irradiating the polishing surface with the light rays, dressing of the polishing surface is performed, and products resulting from dressing and the like are removed. The polishing apparatus supplies abrasive particles to the polishing surface stably by dressing and allows high-speed polishing of the substrate.

Abstract: A conductive polishing pad that includes one or more anodes and one or more cathodes formed at or near the polishing surface of a polishing pad. The anodes and cathodes are connected to a wiring network that is part of an electrical connector system that allows for a current source to be connected to the polishing pad and provide a current to the anodes and cathodes even if the polishing pad is moving relative to the current source. An electrolytic polishing fluid introduced between the polishing surface and the metal layer of a wafer forms an electrical circuit between the anode, cathode and the metal layer. The conductive polishing pad allows for electrochemical mechanical polishing (ECMP) to be performed on a conventional chemical mechanical polishing (CMP) tool.

Abstract: A polishing pad conditioner for a chemical-mechanical polishing apparatus includes a conditioning plate having a first recess and a holder having a second recess. The first recess is formed on the upper face of the conditioning plate, and the second recess is formed on the bottom face of the holder. A first filling member having a specific gravity smaller than that of the conditioning plate fills up the first recess, and a second filling member having a specific gravity smaller than that of the holder fills up the second recess. Therefore, the weight of the polishing pad conditioner can be reduced, and the durability and service life of an air bladder that adjusts the height of the polishing pad conditioner can be improved.

Abstract: A carrier head for chemical mechanical polishing of a substrate having a front surface, a back surface and an edge. The carrier head has a base, an inner retaining ring positioned beneath the base, and an outer retaining ring surrounding the inner retaining ring to retain the inner retaining ring. The inner retaining ring has a main portion with a first surface to apply a load to a perimeter portion of the back surface of the substrate and an annular lower projection protruding downwardly from the main portion with a second surface to circumferentially surround the edge of the substrate to retain the substrate.

Abstract: Systems and methods for characterizing a polishing process are provided. One method includes scanning a specimen with two or more measurement devices during polishing. In one embodiment, the two or more measurement devices may include a reflectometer and a capacitance probe. In another embodiment, the two or more measurement devices may include an optical device and an eddy current device. An additional embodiment relates to a measurement device for scanning a specimen during polishing. The device includes a light source and a scanning assembly. The scanning assembly is configured to scan light from the light source across the specimen during polishing. Another measurement device includes a laser light source coupled to a first fiber optic bundle and a detector coupled to a second fiber optic bundle. An additional method includes scanning a specimen with different measurement devices during different steps of a polishing process.

Abstract: A method and apparatus for planarizing a microelectronic substrate. In one embodiment, the apparatus can include a membrane formed from a compressible, flexible material, such as neoprene or silicone, and having a first portion with a thickness greater than that of a second portion. The membrane can be aligned with the microelectronic substrate to bias the microelectronic substrate against a planarizing medium such that the first portion of the membrane biases the microelectronic substrate with a greater downward force than does the second portion of the membrane. Accordingly, the membrane can compensate for effects, such as varying linear velocities across the face of the substrate that would otherwise cause the substrate to planarize in a non-uniform fashion or, alternatively, the membrane can be used to selectively planarize portions of the microelectronic substrate at varying rates.

Abstract: A carrier head for a chemical mechanical polishing apparatus. The carrier head includes a housing, a base, a loading mechanism, a gimbal mechanism, and a substrate backing assembly. The substrate backing assembly includes a support structure positioned below the base, a substantially horizontal, annular flexure connecting the support structure to the base, and a flexible membrane connected to the support structure. The flexible membrane has a mounting surface for a substrate, and extends beneath the base to define a chamber.

Abstract: An objective of the present invention is to provide a polishing pad for a semiconductor wafer and a laminated body for polishing of a semiconductor wafer equipped with the same which can perform optical endpoint detection without lowering the polishing performance as well as methods for polishing of a semiconductor wafer using them. The polishing pad of the invention comprises a water-insoluble matrix material such as crosslinked 1,2-polybutadiene, and a water-soluble particle such as ?-cyclodextrin dispersed in this water-insoluble matrix material, and has a light transmitting properties so that a polishing endpoint can be detected with a light.

Abstract: A diaphragm flexure for a polishing head on a chemical mechanical polisher, particularly a Titan (TM) polishing head. The diaphragm flexure includes an annular flexure body having at least one bulge or protrusion formed in the upper surface thereof and at least one bulge or protrusion formed in the lower surface thereof. In assembly of the polishing head, each of the at least one inner and outer bulge or protrusion is inserted in a corresponding groove provided in a surface of an adjacent element of the polishing head. The elements in the polishing head are secured together with the flexure body typically by extending screws through respective screw openings in the elements and the flexure body.

Abstract: An apparatus for polishing a wafer includes a polishing station having a platen on which a polishing pad is installed, a polishing head having a membrane that contacts a surface of the wafer, the membrane securing the wafer and pressuring the wafer against the polishing pad, wherein the polishing station includes a transfer stage for loading the wafer on or unloading the wafer from the polishing head, and wherein the transfer stage includes a pedestal on which the wafer is placed and a fluid supply part for supplying a fluid into a boundary region between the wafer and the membrane to reduce a surface tension between the wafer and the membrane. Preferably, the apparatus further includes a stopper for preventing the wafer placed on the pedestal from being lifted up along with the membrane when the wafer is unloaded from the polishing head onto the pedestal.

Abstract: A chemical mechanical polishing apparatus has a substrate holder, a polishing belt, and a backing member positioned on a side of the polishing belt opposite the substrate holder. The polishing belt has a polishing surface to contact at least a portion of the substrate held by the substrate holder. The polishing belt is movable in a first direction in a generally linear path relative to the substrate. The polishing belt has a plurality of grooves formed therein.

Abstract: A linear chemical mechanical polishing apparatus that is equipped with a programmable pneumatic support platen and a method for controlling the polishing profile on a wafer surface during a linear CMP process are disclosed. The programmable pneumatic support platen is positioned juxtaposed to a bottom surface of a continuous belt for the linear CMP apparatus and positioned corresponding to a position of the wafer carrier so as to force the polishing pad against the wafer surface to be polished. The support platen has a predetermined thickness, a plurality of apertures through the thickness and a plurality of openings in a top surface in fluid communication with a gas source through the plurality of apertures.

Abstract: A retaining ring has an inner core of a first material and an outer layer of a second, different material that is deposited on the first material. The outer layer can be deposited by spraying, e.g., by powder coating, and can be a polymer, e.g., polyetheretherketone.

Abstract: The invention is directed to chemical-mechanical polishing pads comprising a transparent window comprising a polymer resin having a first index of refraction and an inorganic material having a second index of refraction. The transparent window has a light transmittance of about 10% or more at a wavelength of about 200 nm to about 10,000 nm. The difference between the first index of refraction and the second index of refraction is about 0.3 or less at the wavelength.

Abstract: Polishing pads with a window, systems containing such polishing pads, and processes that use such polishing pads are disclosed. In embodiments, a polishing pad includes a backing layer having an opening, a polishing layer having an opening aligned with the opening in the backing layer, a solid window of a first material in the opening of the polishing layer, a layer of a first adhesive material between the backing layer and the solid window, and a layer of a second adhesive material between the layer of the first adhesive material and the window.

Abstract: A method and apparatus for the wireless transfer of measurements made during chemical-mechanical planarization of semiconductor wafers with a planarizing machine. The apparatus includes a sensor connected to the semiconductor substrate or a movable portion of the planarizing machine. The apparatus further comprises a display spaced apart from the sensor and a wireless communication link coupled between the sensor and the display to transmit a signal from the sensor to the display. The wireless communication link may include an infrared link, a radio link, an acoustic link, or an inductive link. The sensor may measure force, pressure, temperature, pH, electrical resistance or other planarizing parameters. The sensor may also detect light reflected from a reflective surface of a substrate that is used to calibrate the planarizing machine.

Abstract: A polishing pad for a chemical mechanical polishing apparatus. The polishing pad includes a plurality of concentric circular grooves. The polishing pad may include multiple regions with grooves of different widths and spacings.

Abstract: A chemical mechanical polishing to polish a substrate having a layer to be polished thereon is described. A pre-polishing process is performed using a softer polishing pad to remove partially raised parts of the layer to be polished before conducting a polishing process using a harder polishing pad. Since the first polishing pad is flexible, porous and with low density, the first polishing pad can be deformed to increase contact areas between the first polishing pad and the raised part of the layer to be polished, and the abrasives are embedded easily in holes of the surface of the first polishing pad. Ultimately, the layer to be polished can be polished directly during the pre-polishing process. Therefore, the processing time is reduced, the consumption of the slurry is decreased and the process cost can be cut down substantially.

Abstract: A system includes a measuring station for positioning an eddy current probe proximate to a substrate in a substrate holder. The probe can produce a time-varying magnetic field, in order to induce eddy currents in one or more conductive regions of a substrate either prior to or subsequent to polishing. The eddy current signals are detected, and may be used to update one or more polishing parameters for a chemical mechanical polishing system. The substrate holder may be located in a number places; for example, in a substrate transfer system, a factory interface module, a cleaner, or in a portion of the chemical mechanical polishing system away from the polishing stations. Additional probes may be used.

Abstract: A process for machining a wafer-like workpiece between two plates, in which material is abraded from the workpiece under the influence of an auxiliary substance supplied and of a pressure acting on the workpiece. In this process, the pressure on the workpiece is significantly reduced and then increased again at least once during the machining of the workpiece, and the supply of the auxiliary substance is reduced as the pressure is increased.

Abstract: A wear ring assembly is provided for use in a workpiece (e.g. a semiconductor wafer) polishing apparatus. The wear ring assembly comprises a wear element and a backing ring. The backing ring includes a fulcrum and is configured to transfer a component of pressure applied to the backing ring to the wear element via the fulcrum. In this manner, a substantially uniform vertical displacement of the wear ring is achieved.

Abstract: A method and apparatus for planarizing a microelectronic substrate. In one embodiment, the apparatus can include an elongated, non-continuous polishing pad oriented at an angle relative to the horizontal to allow planarizing liquids and materials removed from the microelectronic substrate to flow off the polishing pad under the force of gravity. Two such polishing pads can be positioned opposite each other in a vertical orientation and can share either a common platen or a common substrate carrier. The polishing pads can be pre-attached to both a supply roll and a take-up roll to form a cartridge which can be easily removed from the apparatus and replaced with another cartridge.

Abstract: A method for preparing a semiconductor die for analysis comprises providing a semiconductor die having a connector on one side and an opposite, backside surface to be analyzed, providing a polishing pad for polishing the backside surface of a semiconductor die, providing a rotatable spindle for securing the polishing pad, and providing a constant force actuator on the spindle, the constant force actuator being adapted to provide constant force between the polishing pad and the backside surface of the die. The method then includes contacting the backside die surface with the polishing pad, rotating the spindle and polishing pad, and polishing the backside surface of the die while maintaining the substantially constant force of the polishing pad on the die backside surface with the constant force actuator.

Abstract: A CMP system, a wafer carrier, and components of a wafer carrier are provided for processing a semiconductor topography. In particular, a CMP system, a wafer carrier, and components of a wafer carrier are provided in which a greater pressure may be applied in a first portion of a semiconductor topography than in a second portion of the topography. The first portion may, for example, be adjacent to an outer edge of the topography, while the second portion may include the center of the topography. Alternatively, the first portion and second portion of the semiconductor topography may include any region of the topography. The wafer carrier components may include a carrier plate and/or a carrier backing film adapted to apply a greater pressure in a first portion of the semiconductor topography than in a second portion of the semiconductor topography.

Abstract: A method and apparatus for the wireless transfer of measurements made during chemical-mechanical planarization of semiconductor wafers with a planarizing machine. The apparatus includes a sensor connected to the semiconductor substrate or a movable portion of the planarizing machine. The apparatus further comprises a display spaced apart from the sensor and a wireless communication link coupled between the sensor and the display to transmit a signal from the sensor to the display. The wireless communication link may include an infrared link, a radio link, an acoustic link, or an inductive link. The sensor may measure force, pressure, temperature, pH, electrical resistance or other planarizing parameters. The sensor may also detect light reflected from a reflective surface of a substrate that is used to calibrate the planarizing machine.

Abstract: A method and apparatus for planarizing a microelectronic substrate. In one embodiment, the apparatus can include an elongated, non-continuous polishing pad oriented at an angle relative to the horizontal to allow planarizing liquids and materials removed from the microelectronic substrate to flow off the polishing pad under the force of gravity. Two such polishing pads can be positioned opposite each other in a vertical orientation and can share either a common platen or a common substrate carrier. The polishing pads can be pre-attached to both a supply roll and a take-up roll to form a cartridge which can be easily removed from the apparatus and replaced with another cartridge.

Abstract: A method and apparatus for the wireless transfer of measurements made during chemical-mechanical planarization of semiconductor wafers with a planarizing machine. The apparatus includes a sensor connected to the semiconductor substrate or a movable portion of the planarizing machine. The apparatus further comprises a display spaced apart from the sensor and a wireless communication link coupled between the sensor and the display to transmit a signal from the sensor to the display. The wireless communication link may include an infrared link, a radio link, an acoustic link, or an inductive link. The sensor may measure force, pressure, temperature, pH, electrical resistance or other planarizing parameters. The sensor may also detect light reflected from a reflective surface of a substrate that is used to calibrate the planarizing machine.

Abstract: A method and apparatus are provided for polishing a substrate surface. In one aspect, an apparatus for polishing a substrate includes a basin and a polishing head. A carrier is disposed in the basin and has a substrate supporting surface. A retaining ring is disposed on the carrier and at least partially circumscribes the substrate supporting surface. The polishing head is supported above the basin and includes a conductive polishing pad. Embodiments may further include a vent to allow gas to escape through the polishing head. Embodiments may further include an electrolyte supply that flows electrolyte into the polishing head and out through a permeable electrode and the conductive pad to the substrate. Embodiments may also be configured with a polishing head diameter smaller than the substrate supported by the carrier.

Abstract: A continuous CMP process for polishing multiple conductive and non-conductive layers on a semiconductor substrate. The continuous process comprises the steps of: (a) disposing a substrate on a platen; (b) polishing a first layer using both a mechanical means and a chemical means; and (c) polishing a second layer upon adjusting at least one parameter in either the mechanical means, chemical means, or both.

Abstract: Techniques for polishing a wafer (10) include closed-loop control. The wafer can be held by a carrier head (100) having at least one chamber whose pressure is controlled to apply a downward force on the wafer. Thickness-related measurements of the wafer can be obtained during polishing and a thickness profile for the wafer is calculated based on the thickness-related measurements. The calculated thickness profile is compared to a target thickness profile. The pressure in at least one carrier head chamber is adjusted based on results of the comparison. The carrier head chamber pressures can be adjusted to control the amount of downward force applied to the wafer during polishing and/or to control the size of a loading area on the wafer against which the downward force is applied.

Abstract: A CMP pad conditioning unit having a new and improved drive transmission for transmitting rotation from a drive motor to a conditioning disk on the pad conditioning unit. The drive transmission includes a rotatable transmission shaft that is drivingly engaged by the drive motor and drivingly engages the conditioning disk. In operation, rotation is transmitted from the drive motor to the conditioning disk through the transmission shaft. The drive transmission is characterized by reliability, longevity and enhanced efficiency in the conditioning of substrate polishing pads.

Abstract: An apparatus and method for chemical mechanical polishing in which a substrate is pressed against a polishing pad by a carrier head having a plurality of chambers. A common pressure is applied by the plurality of chambers in the carrier head using a common regulator, but a duration of application of the first pressure to each chamber from the plurality of chambers is controlled independently from other chambers.

Abstract: The present invention is directed to an apparatus and method for flow regulation of planarization fluids to a semiconductor wafer planarization machine. In one embodiment, the regulating system includes a fluid storage tank with an acoustic fluid level sensor. The storage tank is connected to a fluid delivery line that delivers planarization fluid to the storage tank through a flow control valve and delivers a regulated flow of planarization fluid to a planarization machine through a flow sensor. A gas supply system is connected to the storage tank to provide system pressurization. Regulation of the fluid flow is achieved by a control system in which the flow sensor and the acoustic fluid level sensor comprise feedback elements in a closed feedback system to independently control the pressure in the storage tank and the fluid admitted by the control valve. In an alternate embodiment, the fluid level sensor is comprised of capacitive proximity sensors located outside the wall of the storage tank.

Abstract: A lapping method includes a step of moving a substantially bar-shaped workpiece in a radial direction of a surface of a rotary lapping plate while simultaneously oscillating the workpiece pivotally about a central point in a longitudinal direction of the workpiece in a plane parallel to the surface of the rotary lapping plate.

Abstract: A chemical mechanical polishing (CMP) apparatus with temperature control. The apparatus controls circular zone temperature of the wafer. The CMP apparatus comprises a platen; a carrier holding a wafer against the platen; a guide ring disposed at the rim of the carrier to mount the wafer on the carrier; and a heater disposed in the guide ring, in the carrier, or used to heat the slurry. The temperature of the heater is set between 20° C. and 60° C. Thus, the polishing rate at the edge is improved, and the polishing difference between the edge and the center of the wafer is reduced.

Abstract: Methods and apparatuses for planarizing a microelectronic substrate. In one embodiment, a planarizing pad for mechanical or chemical-mechanical planarization includes a base section and a plurality of embedded sections. The base section has a planarizing surface, and the base section is composed of a first material. The embedded sections are arranged in a desired pattern of voids, and each embedded section has a top surface below the planarizing surface to define a plurality of voids in the base section. The embedded sections are composed of a second material that is selectively removable from the first material. A planarizing pad in accordance with an embodiment of the invention can be made by constructing the embedded sections in the base section and then removing a portion of the embedded sections from the base section. By removing only a portion of the embedded sections, this procedure creates the plurality of voids in the base section and leaves the remaining portions of the embedded sections.

Abstract: A polishing head assembly for use in a chemical mechanical planarization apparatus is provided. The polishing head assembly includes a carrier head shaped substantially like a disk having a circumference, a top surface, a bottom surface, and an outer wall, the outer wall having a groove therein, the groove extending into the carrier head from the bottom surface of the carrier head, and the groove running the entire circumference of the carrier head; and a retainer ring having an interior wall and an exterior wall, the interior wall of the retainer ring being in contact with the outer wall of the carrier head, the interior wall having a slot therein, the slot defining a lower portion of the interior wall as a flexible leg, the flexible leg having a receiving end that is adapted to secure an object having a surface to be polished, the slot having a first terminal end adjacent to the groove in the carrier head and a second terminal end, opposite the first terminal end, in the body of the retainer ring.

Abstract: A method and apparatus for the wireless transfer of measurements made during chemical-mechanical planarization of semiconductor wafers with a planarizing machine. The apparatus includes a sensor connected to the semiconductor substrate or a movable portion of the planarizing machine. The apparatus further comprises a display spaced apart from the sensor and a wireless communication link coupled between the sensor and the display to transmit a signal from the sensor to the display. The wireless communication link may include an infrared link, a radio link, an acoustic link, or an inductive link. The sensor may measure force, pressure, temperature, pH, electrical resistance or other planarizing parameters. The sensor may also detect light reflected from a reflective surface of a substrate that is used to calibrate the planarizing machine.

Abstract: The invention shows a workpiece template and a number of additional elements for forming wafers of varying thicknesses=. The template is formed of a main disk including a plurality of cavities extending through a main plate with either a frictionless material or a backing plate forming the cavity base. The template shows additional elements to aid in the lapping/polishing abrasive fluid movement in the form of spiraling channels moving across the top surface of the template. The channels can extend through the template cavity walls. Also shown are the improvement previously stated applied to a template having notched gear-like teeth for another type of lapping/polishing machine.

Abstract: A system and method for polishing semiconductor wafers includes a rotatable polishing pad movably positionable in a plurality of partially overlapping configurations with respect to a semiconductor wafer. A pad dressing assembly positioned coplanar, and adjacent, to the wafer provides in-situ pad conditioning to a portion of the polishing pad not in contact with the wafer. The method includes the step of radially moving the polishing pad with respect to the wafer.

Abstract: In a polishing apparatus having a cover body with fluid pressing mechanism, during polishing, vibration and migration of sticking portion between a retainer and a membrane generated in downstream of rotation of a polishing platen is prevented by reducing sticking force between the retainer and the membrane to less than force needed to wafer polishing with rotation of the cover body.

Abstract: A system and method for polishing semiconductor wafers includes a variable partial pad-wafer overlap polisher having a reduced surface area, fixed-abrasive polishing pad and a polisher having a non-abrasive polishing pad for use with an abrasive slurry. The method includes first polishing a wafer with the variable partial pad-wafer overlap polisher and the fixed abrasive polishing pad and then polishing the wafer in a dispersed-abrasive process until a desired wafer thickness is achieved.

Abstract: An endpoint detection system in a CMP apparatus has a polishing platen, a polishing pad covering the polishing platen, a chamber located in the polishing platen, and a gas flow system arranged in a periphery of the chamber. The gas flow system has a gas inlet used to flow dry gas into the chamber and a gas outlet used to evacuate water vapor in the chamber. Since the gas flow system can evacuate the water vapor in the chamber, the problem of contaminants such as water droplets has been solved. The endpoint detection can thus be precisely controlled.

Abstract: Grooves are formed in a CMP pad by positioning the pad on a supporting surface with a working surface of the pad in spaced relation opposite to a router bit and at least one projecting stop member adjacent to the router bit, an outer end portion of the bit projecting beyond the stop. When the bit is rotated, relative axial movement between the bit and the pad causes the outer end portion of the bit to cut an initial recess in the pad. Relative lateral movement between the rotating bit and the pad then forms a groove which extends laterally away from the recess and has a depth substantially the same as that of the recess. The depths of the initial recess and the groove are limited by applying a vacuum to the working surface of the pad to keep it in contact with the stop member(s). Different lateral movements between the bit and the pad are used to form a variety of groove patterns, the depths of which are precisely controlled by the stop member(s).

Abstract: A wafer carrier structure for a chemical-mechanical polishing device. The wafer carrier structure includes a holder and a slurry supply pipeline. The slurry supply pipeline is attached to the side of the holder such that a portion of the supply pipeline near the outlet end is either parallel or perpendicular to the sidewall of the holder.

Abstract: A wafer processing module is provided. In one example, the wafer processing module includes a sub-aperture CMP processing system and a pad exchange system including a pad magazine for storing CMP processing pads and a pad exchange robot for transferring CMP processing pads between the sub-aperture CMP processing system and the pad magazine. The wafer processing module includes a module frame that integrates the sub-aperture CMP processing system including the pad exchange system, with a wafer scrubber unit and a wafer SRD unit.