Abstract: Cutting machining is performed on a workpiece by making a cutting tool travel relative to the workpiece while rotating the cutting tool such that a peripheral speed of the cutting tool becomes equal to or more than a cutting speed of the cutting tool, while an outer peripheral surface and an end surface of the cutting tool function as a rake surface and a relief surface, respectively.

Abstract: A polishing pad includes a first region having a first geometric property and a first material property. The polishing pad further includes a second region having a second geometric property and a second material property, wherein the second region is closer to an edge of the polishing pad than the first region. The first geometric property is different from the second geometric property; or the first material property is different from the second material property.

Abstract: An apparatus for chemical-mechanical polishing is provided, including: a plurality of polishing sections spaced apart from one another, each polishing section including: a bracket, a carrier head and a platen, the carrier head being disposed on the bracket and configured to move between a polishing position and a conveying position, in which when the carrier head is located at the polishing position, the carrier head is located above the platen; and a conveying assembly, the conveying assembly including: a rotating plate and a plurality of loading and unloading tables, the plurality of loading and unloading tables being spaced apart from one another, disposed on the rotating plate and configured to rotate along with the rotating plate, in which when the carrier head is located at the conveying position, the carrier head is corresponding to one of the plurality of loading and unloading tables.

Abstract: A polishing method capable of polishing a substrate, such as a wafer, with low running costs is disclosed. A polishing method includes: rotating a substrate while holding a back-side surface of the substrate with a vacuum suction stage; rotating a polishing head holding a plurality of polishing tools; and polishing a front-side surface of the substrate by pressing the plurality of polishing tools, which are rotating, against the front-side surface of the substrate. The front-side surface is a surface on which interconnect patterns are to be formed.

Abstract: A method includes depositing a slurry onto a polishing pad of a chemical mechanical polishing (CMP) station. A workpiece is polished and polishing by-products and slurry are removed from the polishing pad by a vacuum head. A CMP apparatus includes a polishing pad configured to rotate during a CMP process. The apparatus also includes a slurry dispenser configured to deposit a slurry onto a polishing surface of the polishing pad. The apparatus further includes a momentum vacuum assembly including a slotted opening facing the polishing surface of the polishing pad. The apparatus also includes a first suction line coupled to an upper portion of the momentum vacuum assembly and leading to a first vacuum source, the first suction line configured to transport polishing products which have been removed from the polishing pad through the slotted opening.

Abstract: The present invention provides a wafer polishing pad, the wafer polishing pad includes a polishing material layer, a plurality of recesses are formed on the top surface of the polishing material layer, and a warning element disposed within the polishing material layer, the warning element and the polishing material layer have different colors. The feature of the invention is that forming a warning element in the polishing material layer, when the visible state of the warning element is changed, for example, when the warning element appears, disappears or changes the shapes, it means that the wafer polishing pad needs to be replaced. In this way, the user can confirm the destroying situation of the wafer polishing pad easily, and also improving the manufacturing process efficiency.

Abstract: A semiconductor device and method of including peripheral devices into a package is disclosed. In one example, a peripheral device includes a passive device such as a capacitor or an inductor. Examples are shown that include a peripheral device that is substantially the same thickness as a die or a die assembly. Examples are further shown that use this configuration in a fan out process to form semiconductor devices.

Abstract: A system may include an inflatable assembly having a plurality of members. The system may also include a plurality of sensors disposed at a plurality of positions inside or around the inflatable assembly, such that the plurality of sensors may acquire data related to a shape of the inflatable assembly. The system also includes one or more valves, each configured to direct a fluid into a corresponding member of the plurality of members of the inflatable assembly. The system also includes a processor that adjusts positions of the one or more valves to cause the fluid to be directed into the corresponding member of the plurality of members of the inflatable assembly based on the data and a desired shape of the inflatable assembly.

Abstract: A stopper includes a head portion sized and configured to be coupled to an upper platen of a chemical-mechanical planarization system and a stopper leg sized and configured to direct a flow of liquid slurry applied to an upper planar surface of the upper platen substantially away from a lower surface of the upper platen.

Abstract: A method for measuring a template includes: preparing a measurement wafer and measuring a thickness of the measurement wafer; mounting the template on a reference plane; housing the measurement wafer in the concave portion of the template; measuring heights of the annular member and the measurement wafer from the reference plane in a state where a load is applied to the annular member of the template and the measurement wafer by using a pressing jig; and calculating a depth of the concave portion of the template in the state where the load is applied by using the pressing jig from the measured thickness of the measurement wafer and the heights of the annular member and the measurement wafer. Consequently, it is possible to measure the depth of the concave portion of the template in a state closer to a state during polishing than that realized by a conventional measuring method.

Abstract: Embodiments of substrate carriers which enable active/passive bonding and de-bonding of a substrate are provided herein. In some embodiments, a substrate carrier for holding a substrate comprises a disk formed of a porous material, the disk being formed symmetrically about a central axis and defining a substantially planar upper surface. In some embodiments, the porous material is silicon carbide and the substrate carrier includes a semi-porous surface coating formed atop the upper surface of the disk.

Abstract: A platen rotation apparatus includes a rotator assembly coupled with a platen. The rotator assembly operates in a first mode to increase a rotational kinetic energy of the platen based on an electrical energy input, and, in a second mode, to decrease the rotational kinetic energy of the platen and generate an electrical energy output based on the decreased rotational kinetic energy of the platen. An energy storage device electrically coupled with the rotator assembly provides the electrical energy input when the rotator assembly is in the first mode and receives the electrical energy output when the rotator assembly is in the second mode.

Abstract: A wafer level packaging method includes the following steps. A first wafer is bonded over a second wafer. A first grinding process on the first wafer is performed, to remove an upper chamfered edge of the first wafer and reduce a thickness of the first wafer. A trimming process is performed on the first wafer, to remove a lower chamfered edge of the first wafer to form a trimmed first wafer. A second grinding process is performed on the trimmed first wafer, to reduce a thickness of the trimmed first wafer.

Abstract: A method of fabricating a polishing pad using an additive manufacturing system includes receiving data indicative of a desired shape of the polishing pad to be fabricated by droplet ejection. The desired shape defines a profile including a polishing surface and one or more grooves on the polishing pad. Data indicative of a modified pattern of dispensing feed material is generated to at least partially compensate for distortions of the profile caused by the additive manufacturing system, and a plurality of layers of the feed material are dispensed by droplet ejection in accordance to the modified pattern.

Abstract: A robotic platform is configured to transport a cup. The robotic platform includes a rack housing that has a top side and a bottom side. The top side has a plurality of cup slots configured to accommodate the cup. At least one drop detection sensor and at least one obstacle avoidance sensor are mechanically coupled to the rack housing. An integrated circuit is electrically coupled to a battery, the at least one drop detection sensor, and the at least one obstacle avoidance sensor, a first geared motor and a second geared motor. The geared motors are attached to wheels. The integrated circuit is programmed to determine if a sensor has a data above set point, and then executing a move path.

Abstract: A tape film lamination apparatus may include a housing, a substrate holder disposed in the housing and positioned to receive a substrate, a film holder disposed on the housing and positioned to support a tape film, and an air removal unit connected to a portion of the housing below the film holder to remove and/or exhaust air from the housing resulting to attach the tape film to the substrate.

Abstract: A method and an apparatus for processing a peripheral portion of a substrate, such as a wafer, are disclosed. The substrate processing method includes: holding a substrate on a substrate stage; rotating the substrate stage and the substrate about an axis of the substrate stage; directing a laser beam to an edge portion of the rotating substrate to form an annular crack in the substrate; and pressing a polishing tool against the edge portion of the rotating substrate to form a stepped recess in a peripheral portion of the substrate.

Abstract: Provided is a disclosure for embodiments for a brush with communication capabilities, which is configured to clean a surface of, for example, a semiconductor wafer, as well as an offline brush conditioning system and a CMP system that can communicate with the brush.

Abstract: A polishing system includes a wafer support that holds a wafer, the wafer having a first diameter. The polishing system further includes a first polishing pad that polishes a first region of the wafer, the first polishing pad having a second diameter greater than the first diameter. The polishing system further includes an auxiliary polishing system comprising at least one second polishing pad that polishes a second region of the wafer, wherein the second polishing pad has a third diameter less than the first diameter, and the wafer support is configured to support the wafer during use of the first polishing pad and the auxiliary polishing system.

Abstract: There is disclosed a polishing cleaning mechanism configured to be in contact with a rear surface of a substrate which is held in a substrate holding unit for holding the rear surface of the substrate and perform a polishing process and a cleaning process on the rear surface of the substrate, including a cleaning member configured to clean the rear surface of the substrate, a polishing member configured to polish the rear surface of the substrate, and a support member configured to support the polishing member and the cleaning member to face the rear surface of the substrate held in the substrate holding unit, wherein a surface of the polishing member facing the substrate and a surface of the cleaning member facing the substrate differ in relative height from each other.

Abstract: A retaining ring includes a generally annular body having an inner surface to constrain a substrate and a bottom surface, the bottom surface having a plurality of channels extending from an outer surface to the inner surface, and a plurality of islands separated by the channels and providing a contact area to contact a polishing pad, wherein the contact area is about 15-40% of a plan area of the bottom surface.

Abstract: A system includes a CMP carrier that includes a resilient flexible membrane upon which a wafer is mounted, at least three ports for supplying air to the resilient flexible membrane to pneumatically pushing on the wafer through pressure applied throughout the surface area of the resilient flexible membrane to have more uniform pressure. Each port provides pressure to different components of the carrier to adjust pressure or vary pressure during processing of the wafer. Further, the system includes a processor and software program for implementing the CMP carrier with existing CMP machines. The software application converts the air pressure applied to the carrier into units that allow the CMP machine to receive expected data and operate in accordance with the existing commands.

Abstract: An electroplating apparatus that promotes uniform electroplating on the substrates having thin seed layers includes a convex anisotropic high resistance ionic current source (AHRICS), such as an electrolyte-permeable resistive domed plate. The AHRICS is positioned in close proximity of the substrate, so that a distance from the central portion of the AHRICS to the substrate is smaller than the distance from the edge portion of the AHRICS to the substrate. The apparatus further includes a plating chamber configured to hold the electrolyte and an anode. The apparatus further includes a substrate holder configured to hold the substrate. In some embodiments, the apparatus further includes a secondary (thief) cathode configured to divert ionic current from the near-edge region of the substrate.

Abstract: A polishing pad is provided. The polishing pad includes a base layer, a top layer, and multiple grooves. The top layer is located over the base layer and has a polishing surface and a bottom surface opposite to each other. The bottom surface is connected to the base layer. The grooves are formed on the bottom surface of the top layer.

Abstract: Provided is a polishing pad which is capable of providing a high flatness to a polishing workpiece and suppressing the formation of scratches, and a method therefor. The polishing pad comprises a foamed urethane sheet on the surface which includes closed cells and open cells and which satisfies the following requirements: (1) an open cell ratio is 20-80 vol % where the total volume of closed cells and open cells is taken as 100 vol %, (2) the ratio [tan ? (wet/dry) ratio] of a loss factor tan ? in a water-absorption state to that in a dry state is 1.3-1.7, the loss factors being measured according to JIS K7244-4 with an initial load of 20 g at a measuring frequency of 1 Hz at a temperature of 26° C. in a tensile mode over a strain range from 0.01 to 0.1%, and (3) the Shore DO hardness according to ASTM D2240 is 60-80.

Abstract: A polishing pad for a chemical-mechanical polishing apparatus includes a first support layer and a polishing layer. The polishing layer is present on the first support layer. The polishing layer has a top surface that faces away from the first support layer and at least one first cavity that is buried at least beneath the top surface of the polishing layer.

Abstract: An apparatus for performing chemical mechanical polish on a wafer includes a polishing head that includes a retaining ring. The polishing head is configured to hold the wafer in the retaining ring. The retaining ring includes a first ring having a first hardness, and a second ring encircled by the first ring, wherein the second ring has a second hardness smaller than the first hardness.

Abstract: To provide improved planarization, techniques in accordance with this disclosure include a CMP station that includes a support plate having a plurality of apertures. An aperture of the plurality of apertures has a first opening and a second opening connected by a slot. Other systems and methods are also disclosed.

Abstract: A buffing apparatus for buffing a substrate is provided. The apparatus includes: a buff table for holding the substrate, the buff table being rotatable; a buff head to which a buff pad for buffing the substrate is attachable, the buff head being rotatable and movable in a direction approaching the buff table and a direction away from the buff table, and an internal supply line for supplying process liquid for the buffing to the substrate being formed inside the buff head; and an external nozzle provided separately through the internal supply line in order to supply the process liquid to the substrate.

Abstract: A polishing apparatus which can allow easy replacement of a retainer ring and can allow the retainer ring to be secured to a drive ring without causing deformation of the retainer ring is disclosed. The polishing head includes a head body having a substrate contact surface, a drive ring coupled to the head body, and a retainer ring surrounding the substrate contact surface and coupled to the drive ring. A first screw thread is formed on the drive ring, a second screw thread, which engages with the first screw thread, is formed on the retainer ring. The second screw thread extends in a circumferential direction of the retainer ring.

Abstract: A gettering property evaluating method for a wafer includes: a gettering layer forming step of polishing a back surface opposite to a front surface of a semiconductor wafer by use of a polishing wheel to form polishing marks on the back surface and to form a gettering layer inside the semiconductor wafer and beneath the polishing marks; an imaging step of imaging at least a unit region of the back surface formed with the polishing marks by imaging means; a counting step of counting the number of the polishing marks having a width of 10 to 500 nm present in the unit region imaged; and a comparing step of comparing the number of the polishing marks counted by the counting step with a predetermined value to determine whether or not the counted number is not less than the predetermined value.

Abstract: A polishing apparatus which can allow easy replacement of a retainer ring and can allow the retainer ring to be secured to a drive ring without causing deformation of the retainer ring is disclosed. The polishing head includes a head body having a substrate contact surface, a drive ring coupled to the head body, and a retainer ring surrounding the substrate contact surface and coupled to the drive ring. A first screw thread is formed on the drive ring, a second screw thread, which engages with the first screw thread, is formed on the retainer ring. The second screw thread extends in a circumferential direction of the retainer ring.

Abstract: A method for equalizing the thickness variation of a substrate stack which is comprised of a product substrate and a carrier substrate and which is connected in particular by means of an interconnect layer, by local application of local thickness peaks by means of an application apparatus which has at least one application unit. Furthermore this invention relates to a corresponding device.

Abstract: A polishing apparatus according to an embodiment includes a first polishing part, a second polishing part, and an annular part. The second polishing part includes a mounting surface for a semiconductor substrate, and rubs the semiconductor substrate mounted on the mounting surface while pressing the semiconductor substrate against the first polishing part. The annular part includes a support part provided in the second polishing part, and a plurality of convex portions that project from the support part toward the first polishing part, are arranged in a circumferential direction around the mounting surface while being supported by the support part, and are movable in a radial direction of the semiconductor substrate.

Abstract: Polishing pads with grooved foundation layers and polishing surface layers are described. In an example, a polishing pad for polishing a substrate includes a foundation layer having a pattern of grooves disposed therein. A continuous polishing surface layer is attached to the pattern of grooves of the foundation layer. In another example, a polishing pad for polishing a substrate includes a foundation layer with a surface having a pattern of protrusions disposed thereon. Each protrusion has a top surface and sidewalls. A non-continuous polishing surface layer is attached to the foundation layer and includes discrete portions. Each discrete portion is attached to the top surface of a corresponding one of the protrusions of the foundation layer. Methods of fabricating polishing pads with a polishing surface layer bonded to a grooved foundation layer are also described.

Abstract: In a wafer processing method by which, by using, as a reference surface, a flat surface obtained by applying a curable material to the whole of one surface of a wafer obtained by slicing a semiconductor single-crystal ingot by using a wire saw apparatus, surface grinding is performed on the other surface of the wafer and surface grinding is performed on the one surface of the wafer by using the other surface of the wafer subjected to surface grinding as a reference surface, both surfaces of the wafer are planarized at the same time immediately after the wafer is obtained by slicing.

Abstract: A tool for assembly of an inner enclosure of a generator or a machine comprises a first part and a second part. The first part comprises a plate with one edge constructed to form a first half-ring. The second part comprises a second half-ring corresponding to the first half-ring of the first part. Upon assembly of the first part and the second part, the first half-ring and the second half-ring form a full-ring to encompass a shaft of the generator or the machine and to connect to an inner enclosure of the generator or the machine.

Abstract: A polishing apparatus capable of preventing wear of rollers which are to transmit a load to a retainer ring and capable of preventing wear particles from escaping outside is disclosed. The polishing apparatus includes: a retainer ring disposed so as to surround the substrate and configured to press the polishing surface while rotating together with a head body; a rotary ring secured to the retainer ring and configured to rotate together with the retainer ring; a stationary ring disposed on the rotary ring; and a local-load exerting device configured to apply a local load to a part of the retainer ring through the rotary ring and the stationary ring. The rotary ring has rollers which are in contact with the stationary ring.

Abstract: A polishing system configured to polish a lap includes a lap configured to contact a workpiece for polishing the workpiece; and a septum configured to contact the lap. The septum has an aperture formed therein. The radius of the aperture and radius the workpiece are substantially the same. The aperture and the workpiece have centers disposed at substantially the same radial distance from a center of the lap. The aperture is disposed along a first radial direction from the center of the lap, and the workpiece is disposed along a second radial direction from the center of the lap. The first and second radial directions may be opposite directions.

Abstract: A method includes performing a chemical-mechanical planarization (CMP) on an article, providing a polishing fluid capable of transferring charges to the article, and detecting a current generated in response to the charges transferred to the article. An apparatus that is capable of performing the method and a system that includes the apparatus are also disclosed.

Abstract: A polishing device includes a housing, a flexible base coupled to the housing, and a contact region disposed on a first side of the flexible base, wherein the flexible base expands and contracts based on pressure contained within the housing and a second side of the flexible base to form a contact area on the first side that is less than a surface area of the flexible base.

Abstract: The invention provides a polishing pad and a method of using the polishing pad for chemically-mechanically polishing a substrate. The polishing pad comprises a plurality of grooves composed of at least a first plurality of concentric grooves having a first center of concentricity, and a second plurality of concentric grooves having a second center of concentricity. The first center of concentricity is not coincident with the second center of concentricity, the axis of rotation of the polishing pad is not coincident with at least one of the first center of concentricity and the second center of concentricity, the plurality of grooves does not consist of a continuous spiral groove, and the polishing surface does not comprise a mosaic groove pattern.

Abstract: A carrier head includes a housing configured to enclose a wafer and a retainer ring attached to the housing. The retainer ring includes a body and an abrasive structure. The body includes an inner periphery configured to surround the wafer, an outer periphery, and a surface connecting the inner periphery and the outer periphery. The abrasive structure is attached to the surface of the body.

Abstract: Polishing pads with a polishing surface layer having an aperture or opening above a transparent foundation layer are described. In an example, a polishing pad for polishing a substrate includes a foundation layer having a global top surface and a transparent region. A polishing surface layer is attached to the global top surface of the foundation layer. The polishing surface layer has a polishing surface and a back surface. An aperture is disposed in the polishing pad from the back surface through to the polishing surface of the polishing surface layer, and aligned with the transparent region of the foundation layer. The foundation layer provides an impermeable seal for the aperture at the back surface of the polishing surface layer. Methods of fabricating such polishing pads are also described.

Abstract: A substrate holding apparatus and a polishing apparatus which can reduce vibrations of a top ring in its entirety by damping vibrations transmitted from a retaining ring to a top ring body is disclosed. The substrate holding apparatus includes a top ring body having a substrate holding surface configured to hold and press a substrate against a polishing surface, a retaining ring configured to surround the substrate and to contact the polishing surface, and a drive ring comprising a ring member configured to hold the retaining ring on a lower surface thereof, a central member disposed at a central part of the top ring body and supported by the top ring body, and a connecting portion configured to connect the ring member and the central member. The drive ring includes a first material and a second material having a modulus of longitudinal elasticity smaller than the first material.

Abstract: A polishing method and a polishing apparatus for performing a measurement of a film thickness of a substrate, such as a wafer, if an error has occurred during polishing of the substrate. The polishing method includes polishing a plurality of substrates, measuring a film thickness of at least one substrate, which has been designated in advance, of the plurality of substrates that have been polished, and if a polishing error has occurred during polishing of any one of the plurality of substrates, measuring a film thickness of that substrate.

Abstract: A sapphire pad conditioner includes a sapphire substrate having multiple protrusions on a surface and a holder arranged to hold the sapphire substrate. The sapphire substrate is used for conditioning a chemical mechanical planarization (CMP) pad.

Abstract: An adapter plate configured to be attachable to a universal platen of a cleaning unit for cleaning upper electrodes from a plasma processing chamber is disclosed, the adapter plate includes a support surface and a mounting surface configured to be fastened to the universal platen of the cleaning unit. The support surface is configured to support an inner electrode or an outer electrode of a showerhead electrode assembly for cleaning upper or lower surfaces thereof. The support surface having a first set of holes configured to receive pins engaged in an upper surface of the inner electrode, a second set of holes configured to receive pins surrounding an outer periphery of the inner electrode, a third set of holes configured to receive pins engaged in an upper surface of the outer electrode, and a fourth set of holes configured to receive pins surrounding an outer periphery of the outer electrode.

Abstract: A pressure regulator capable of improving both stability of pressure and responsiveness to an input signal is disclosed. A PID controller is configured to stop producing a corrective command value from a point in time when a pressure command value has changed until a PID control starting point and to produce the corrective command value after the PID control starting point. A regulator controller is configured to control operation of a pressure regulation valve so as to eliminate a difference between the pressure command value and a first pressure value from the point in time when the pressure command value has changed until the PID control starting point, and to control the operation of the pressure regulation valve so as to eliminate a difference between the corrective command value and the first pressure value after the PID control starting point.

Abstract: A polishing head including, below a polishing head body, a rubber film held by a disk-shaped mid plate and an annular guide ring disposed around the rubber film holding the back surface of the workpiece on a lower face portion of the rubber film. The polishing head also includes a base member that is coupled to a polishing head body through an elastic film and holds the guide ring and the mid plate such that the lower surface of the guide ring does not contact the polishing pad during polishing. The polishing head and polishing apparatus, are operable in both of the rough polishing process and final polishing process, that can stably achieve predetermined high flatness and high polishing stock removal uniformity in polishing of a workpiece and can obtain a workpiece with fewer fine particles having a diameter of 45 nm or more.