Abstract: A carrier head for chemical mechanical polishing, includes a base, a support structure attached to the base having a surface for contacting a substrate, and a retaining structure attached to the base to prevent the substrate from moving along the surface. The retaining structure and the surface define a cavity for receiving the substrate. The retaining structure includes an upper portion in contact with the base, a lower portion, and a vibration damper separating the upper portion and the lower portion. The vibration damper, the vibration damper includes a material that does not rebound to its original shape when subjected to a deformation.

Abstract: An invention is provided for removing a top wafer layer during a CMP process. Time series data is collected based on a reflected wavelength from a top layer of a wafer. A Fourier Transform is applied to the time series data, and a frequency of peak intensities in the Fourier Transform of the time series data is analyzed to determine a peak magnitude in the frequency. A first removal rate of the top layer is determined based on the peak magnitude in the frequency, and a current thickness of top layer is calculated based on the first removal rate. The CMP process is discontinued when the current thickness of the top layer is equal to or less than a target thickness, and a separate polishing process is performed to remove an additional portion of the top layer. In one aspect, the separate polishing process can be based on a soft endpoint detection process having second removal rate that is lower than the first removal rate.

Abstract: Chemical-mechanical planarizing machines and methods to maintain processing pads and other planarizing media used in planarizing microelectronic workpieces. In one embodiment, a planarizing machine can include a surfacing device attached to one of a carrier or a support member. The surfacing device is positioned to transmit a non-abrasive energy, such as ultrasonic waves, against the planarizing medium. The planarizing machine can include a controller that is operatively coupled to the surfacing device for activating the surfacing device at appropriate moments either before or during a planarizing cycle of a microelectronic workpiece. In another embodiment the controller can be a computer having a database containing instructions for causing the surfacing device to transmit the non-abrasive energy against the planarizing pad.

Abstract: An apparatus for planarizing a work piece includes an easily assembled work carrier. The carrier includes a carrier insert having a work piece bladder clamped to a carrier backing plate with a plurality of clamps to form a plurality of web plenums. The outer edge of the bladder is supported by a rib that is coupled to a carrier plenum. By adjusting the pressure in the carrier plenum, the pressure exerted on the edge of a work piece during a planarization operation can be adjusted. The carrier also includes a floating wear ring that surrounds the work piece bladder and a work piece mounted on that bladder. By adjusting the force exerted by the wear ring on a polishing pad, independently of the pressure exerted by the rib at the edge of the bladder, the material removal rate near the edge of the work piece can be controlled.

Abstract: In the wafer polishing apparatus for pressing a wafer against a polishing pad with an air bag, which is provided to a carrier, pressing area regulating members are attached to the bottom face of the carrier, whereby areas for pressing the wafer with the air bag are regulated. The pressing area regulating members are prepared in order to regulate different areas to be pressed. The areas for pressing the wafer with the air bag can be changed by replacing the pressing area regulating members when suitable.

Abstract: A wafer polishing head utilizes a wafer backing member having a wafer facing pocket which is sealed against the wafer and is pressurized with air or other fluid to provide a uniform force distribution pattern across the width of the wafer inside an edge seal feature at the perimeter of the wafer to urge (or press) the wafer uniformly toward a polishing pad. A pressure controlled bellows supports and presses the wafer backing member toward the polishing pad and accommodates any dimensional variation between the polishing head and the polishing pad as the polishing head is moved relative to the polishing pad. An integral, but independently retractable and extendable retaining ring assembly is provided around the wafer backing member and wafer to uniformly and independently control the pressure of a wafer perimeter retaining ring on the polishing ad of a wafer polishing bed.

Abstract: A carrier head with a flexible member connected to a base to define a first chamber, a second chamber and a third chamber. A lower surface of the flexible member provides a substrate receiving surface with an inner portion associated with the first chamber, a substantially annular middle portion surrounding the inner portion and associated with the second chamber, and a substantially annular outer portion surrounding the middle portion and associated with the third chamber. The width of the outer portion may be significantly less than the width of the middle portion. The carrier head may also include a flange connected to a drive shaft and a gimbal pivotally connecting the flange to the base.

Abstract: A step part is formed on a face of a retainer ring that contacts with a polishing pad so that a wavily deformed part of the polishing pad enters the step part. The step part is formed like a ring at the inside of the face which actually contacts with the polishing pad. Moreover, a height of the step part is smaller than a thickness of a wafer so that a top face of the step part does not contact with the polishing pad and the wafer does not enter the step part. Further, a width of the step part is set so that the wavily deformed part of the polishing pad can enter the step part.

Abstract: A semiconductor wafer is cleaned while a sponge or brush is pressed against the wafer with a constant forced applied utilizing a bias in a constant force pencil. The wafer is cleaned in the state wherein a collapsing portion of the constant force pencil with respect to the cleaning sponge cloth is set in such a way that the cleaning pressure, which is applied from the cleaning sponge to the wafer, can be constant and is adjustable. A method for cleaning wafers using a constant force pencil is also described.

Abstract: A polishing apparatus has a turntable with a polishing cloth attached thereto and a top ring for holding and pressing a workpiece to be polished against the polishing cloth under a certain pressure. The polishing apparatus also has a first dressing unit having a contact-type dresser for dressing the polishing cloth by bringing the contact-type dresser in contact with the polishing cloth, and a second dressing unit having a noncontact-type dresser for dressing the polishing cloth with a fluid jet applied therefrom to the polishing cloth. The contact-type dresser comprises a diamond dresser or an SiC dresser.

Abstract: An method and apparatus for forming wafers of varying thickness'. The apparatus includes a template. The template is formed of a main disk including a plurality of cavities extending into a first side thereof. Each cavity has notches cut in the walls thereof and a pattern etched in the base thereof. Holding disks are moistened and positioned within respective cavities for releasably securing a wafer in the cavity. A moistening liquid is dispensed and diffuses into the cavities via the notches cut in the walls and collects in the pattern etched on the base of the cavity thereby increasing the suctional force used to secure the holding disk. When the template is releasably secured within a cavity, rotatably connected to a rotating head and positioned such that the first side faces a lapping and polishing surface, wafers received by the cavities are lapped and polished upon rotation of the rotating head.

Abstract: New, versatile finishing surfaces are described. Unitary finishing elements having discrete finishing members attached to unitary resilient body are disclosed for finishing microdevices such as semiconductor wafers. Finishing surfaces such as discrete finishing members can be comprised of a multiphase polymeric composition. The new unitary finishing elements have lower cost to manufacture and high precision. The unitary finishing elements and finishing surfaces can reduce unwanted surface defect creation on the semiconductor wafers during finishing.

Abstract: The present invention is a polishing pad conditioning head for a CMP and similar types of apparatus that is especially useful in conditioning the surface of fixed-abrasive CMP polishing pads to maintain optimal process conditions for the planarization process on dielectric and metal films on semiconductor wafers, as well as wafers and disks used in computer hard disk drives. The polishing pad conditioning head comprises a substrate and a layer of fine-grain chemical vapor deposited polycrystalline diamond that is bonded onto the substrate. Alternatively, a thin sheet of polycrystalline diamond may be deposited on a preferred growth substrate by a chemical vapor deposition process, then removed from the growth substrate and then bonded to the CMP conditioning disk substrate.

Abstract: The present invention provides a precise polishing apparatus and method in which a polished body is polished by rotating a polishing pad having a diameter greater than that of the polished body while urging the polishing pad against the polished body in conditions that a center of the polished body is deviated from a rotation axis of the polishing pad and that the polishing pad is contacted with the entire polished surface of the polished body. The polished body may be a semi-conductor wafer.

Abstract: An apparatus and method are disclosed for planarizing a wafer in a carrier with adjustable pressure zones and adjustable barriers between zones. The carrier has an independently controlled central zone and concentric surrounding zones for distributing the pressure on the backside of a wafer while the wafer is being pressed against an abrasive surface in a chemical-mechanical polishing tool. The pressure zones may be created by mounting an elastic web diaphragm to a carrier housing that has a plurality of recesses. A corresponding plurality of elastic ring shaped ribs may extend from the web diaphragm opposite the recesses. The plurality of ring shaped ribs thereby defines a central zone surrounded by one or more concentric surrounding zones. The zones and barriers may be individually pressurized by utilizing corresponding fluid communication paths during the planarization process.

Abstract: A method and apparatus for forming wafers of varying thickness'. The apparatus includes a template. The template is formed of a main disk including a plurality of cavities extending into a first side thereof and a backing plate positioned on a side of the main disk opposite the first side. Holding disks are moistened and positioned within respective cavities for releasably securing a wafer in the cavity. When the template is releasably secured to and rotatable with a rotating head and positioned such that the first side faces a lapping and polishing surface, wafers received by the cavities are lapped and polished upon rotation of the rotating head. A plurality of shims are selectively received within respective cavities between a base of the cavity and the holding disk for adjusting a depth of the cavity thereby adjusting an amount of a wafer to be lapped and polished. The shims have varying thickness' and are color coated, each color being representative of a predetermined thickness for the shim.

Abstract: A method and apparatus for the wireless transfer of measurements made during chemical-mechanical planarization of semiconductor wafers with a planarizing machine. The apparatus includes a sensor connected to the semiconductor substrate or a movable portion of the planarizing machine. The apparatus further comprises a display spaced apart from the sensor and a wireless communication link coupled between the sensor and the display to transmit a signal from the sensor to the display. The wireless communication link may include an infrared link, a radio link, an acoustic link, or an inductive link. The sensor may measure force, pressure, temperature, pH, electrical resistance or other planarizing parameters. The sensor may also detect light reflected from a reflective surface of a substrate that is used to calibrate the planarizing machine.

Abstract: A work piece carrier head can carry a semiconductor wafer during both plating and polishing operations. The carrier head includes a first component secured to a shaft by which the carrier head can be rotated, translated, and moved up and down, a second component connected to the first component and movable by fluid pressure relative to the first component between retracted and extended positions, and a third component connected to the first and second components for up and down movement between wafer loading or unloading and wafer plating or polishing positions. The third carrier head component includes a contact element by which electrical contact with the wafer is provided to permit wafer plating.

Abstract: A material with a mesh of fibers and a binder material holding the fibers in the mesh can be used on a carrier head or a polishing pad. A polishing apparatus can include a pad cleaner with nozzles to direct jets of cleaning fluid onto the polishing pad and a brush to agitate a surface of the polishing pad.

Abstract: The invention provides a method of polishing a nickel-containing substrate comprising (i) contacting the substrate with a chemical-mechanical polishing system comprising an abrasive, a polishing pad, or both an abrasive and a polishing pad, a silver salt comprising a silver ion, and a liquid carrier, and (ii) abrading at least a portion of the substrate to polish the substrate. The invention further provides a chemical-mechanical polishing system comprising (a) an abrasive, a polishing pad, or both an abrasive and a polishing pad, (b) a liquid carrier, (c) a silver salt comprising a silver ion, and (d) a secondary oxidizing agent, wherein the amount of the silver ion is about 0.1 wt. % to about 3 wt. % and the wt. % amount of the secondary oxidizing agent is about 3 times or less than the wt. % amount of the silver ion, based on the weight of the liquid carrier and anything dissolved or suspended therein.

Abstract: A carrier head for a chemical mechanical polishing apparatus includes a retaining ring having a flexible lower portion and a rigid upper portion. A shim can be inserted between the retaining ring and a base of the carrier head to improve the retaining ring lifetime. A seal may be inserted between the retaining ring and a flexible membrane to seal the chamber between the flexible membrane and the base.

Abstract: The present invention relates to a method and an apparatus for machining a join surface of a workpiece, and solves the problem of the leakage attributable to the streaks formed by the abrasive grains thereby to provide the join surface having a high hermetic property.

Abstract: A wafer polishing apparatus 19 comprising a polishing head 3 having a retainer ring 20 provided around the periphery of a wafer W for suppressing movement of the wafer W in the radial direction during polishing. The retainer ring 20 comprises an attachment plate 21 affixed to the polishing head 3, a ceramic friction ring 22 brought into contact with a polishing pad 2, and a resin spacer 23 provided between the attachment plate 21 and the friction ring 22.

Abstract: A chemical mechanical polishing (CMP) system is provided. A carrier has a top surface and a bottom region. The top surface of the carrier is designed to hold and rotate a wafer having a one or more formed layers to be prepared. A preparation head is also included and is designed to be applied to at least a portion of the wafer that is less than an entire portion of the surface of the wafer. Preferably, the preparation head and the carrier are configured to rotate in opposite directions. In addition, the preparation head is further configured to oscillate while linearly moving from one of the direction of a center of the wafer to an edge of the wafer and from the edge of the wafer to the center of the wafer so as to facilitate precision controlled removal of material from the formed layers of the wafer.

Abstract: A method for controlling a process in a multi-zonal processing apparatus and specifically for determining the optimum values to set for processing parameters J(Zi) in each of the zones of that apparatus includes processing a test work piece in the apparatus with initial values Jl(Zi) of the parameters in each zone i to achieve a process result Ql(x). Then a process result Qf(x) to be expected from incremental changes in the parameters to values Jf(x) is calculated. The expected process results Qf(x) are related to the initial process results Ql(x) by the relationship: Qf(x)=Ql(x)*Jf(x)/Jl(x). After determining optimum values of J(Zi) to reduce the difference between the expected process result and a target process result, a work piece is processed through the process apparatus using those optimum values of J(Zi).

Abstract: A method for smoothing a surface of a polishing pad previously used in planarizing a surface of a substrate in a chemical mechanical planarization (CMP) system is provided. The method starts by conditioning the surface of the polishing pad so as to create a post-conditioned surface having a plurality of asperities. The post-conditioned surface of the polishing pad is then ironed, thus compressing the plurality of asperities onto the post-conditioned surface of the polishing pad such that the plurality of asperities lay substantially flat against the post-conditioned surface of the polishing pad.

Abstract: A polishing apparatus is used for polishing a surface of a workpiece such as a semiconductor wafer or a glass substrate. The polishing apparatus comprises a polishing table having a polishing surface thereon, a plurality of workpiece holders each for holding a workpiece and pressing the workpiece against the polishing surface, and a controller for controlling the workpiece holders individually so that polishing operations of the workpiece holders are controlled independently of each other.

Abstract: The present invention provides an improved planarization or polishing apparatus for chemical mechanical planarization and other types of polishing such as metal polishing and optical polishing. In an exemplary embodiment, an apparatus for polishing an object comprises a pad having a polishing surface to be placed on a target surface of the object to be polished. A pad drive member is connected to the pad to move the pad relative to the object to change a position of the polishing surface of the pad on the target surface of the object. The pad comprises a backing material having a modulus of elasticity of at least about 300,000 psi. In specific embodiments, the pad includes grooves on the polishing surface. The pad has a thickness between about 0.05 and about 0.1 inch. The pad back material comprises a ceramic material. A compliant layer may be disposed between the pad and the pad drive member. The compliant layer comprises an elastomeric material.

Abstract: A method and apparatus for the wireless transfer of measurements made during chemical-mechanical planarization of semiconductor wafers with a planarizing machine. The apparatus includes a sensor connected to the semiconductor substrate or a movable portion of the planarizing machine. The apparatus further comprises a display spaced apart from the sensor and a wireless communication link coupled between the sensor and the display to transmit a signal from the sensor to the display. The wireless communication link may include an infrared link, a radio link, an acoustic link, or an inductive link. The sensor may measure force, pressure, temperature, pH, electrical resistance or other planarizing parameters. The sensor may also detect light reflected from a reflective surface of a substrate that is used to calibrate the planarizing machine.

Abstract: A carrier head of a chemical mechanical polishing apparatus to apply and distribute a polishing slurry to a polishing pad. The retaining ring includes a trough and one or more channels to channel the polishing slurry to the polishing pad.

Abstract: An polishing apparatus consists of a piston which is fixed to the rotation axis, a ceramic plate which is oppositely arranged against the piston via a silicone gel, and a cylinder which houses these components. The wafer is attached on the bottom surface of a backing pad, and will be pressed and rotated by the piston in order to polish the surface thereof.

Abstract: A carrier head for a chemical mechanical polishing apparatus includes a flexible membrane with a lip portion to engage a substrate to form a seal for improved vacuum-chucking.

Abstract: The present invention provides a polishing pad alignment device having an alignment member positionable against a side wall of a platen. The height of the alignment member is sufficient to extend above a top surface of the platen when positioned against the wall of the platen. In one embodiment, the alignment member is an arcuate member having an arc substantially equal to an arc of the platen. In another embodiment, the alignment member is removably attachable to the wall of the platen and the polishing pad alignment member further includes an attachment device configured to attach the alignment member to the platen.

Abstract: A wafer-polishing head which has an increased flexible membrane life and improved wafer polishing accuracy has a principal head 106 having a lower opening portion 106a with an approximately circular shape. A flexible membrane 2 which is positioned in the opening portion 106a of the principal heal head 106 for closing the opening portion 106a and for holding a wafer W at the underside of an inward peripheral portion 2a of the flexible membrane. A sealed pressurizing chamber 107 is formed by closing the opening portion 106a with the flexible membrane. A pressure regulator is provided for controlling the internal pressure of the pressurizing chamber 107. The flexible membrane 2 is thicker in an outer peripheral portion 2b thereof than in the inward peripheral portion 2a which holds the wafer.

Abstract: A carrier head with a flexible member connected to a base to define a first chamber, a second chamber and a third chamber. A lower surface of the flexible member provides a substrate receiving surface with an inner portion associated with the first chamber, a substantially annular middle portion surrounding the inner portion and associated with the second chamber, and a substantially annular outer portion surrounding the middle portion and associated with the third chamber. The width of the cuter portion may be significantly less than the width of the middle portion. The carrier head may also include a flange connected to a drive shaft and a gimbal pivotally connecting the flange to the base.

Abstract: A polishing apparatus for polishing a surface of a workpiece includes a housing unit, a partition wall partitioning an interior of the housing unit into a first chamber and a second chamber, a polishing section disposed in the first chamber and having a turntable with an abrasive cloth mounted on an upper surface thereof and a top ring positioned above the turntable for supporting the workpiece to be polished and pressing the workpiece against the abrasive cloth, and a cleaning section disposed in the second chamber and cleaning the workpiece which has been polished. The polishing apparatus further includes a transferring device for transferring the workpiece which has been polished from the polishing section to the cleaning section through an opening and an exhaust system for exhausting ambient air from each of the polishing section and cleaning section separately and independently.

Abstract: A method and apparatus for improving uniformity of the rate of removal of material from the surface of a semiconductor substrate by chemical mechanical polishing. In accordance with the invention, the semiconductor substrate is subjected to a combination of polishing motions, including orbital motion, and at least one additional polishing motion selected from rotational, oscillating, sweeping, and linear polishing motions. The invention also provides an improved method for conditioning polishing pads to provide more uniform conditioning and to extend their useful life span.

Abstract: A wafer carrier structure for a chemical-mechanical polishing device. The wafer carrier structure includes a holder and a slurry supply pipeline. The slurry supply pipeline is attached to the side of the holder such that a portion of the supply pipeline near the outlet end is either parallel or perpendicular to the sidewall of the holder.

Abstract: A retaining ring structure of a carrier head designed for use in a chemical mechanical polishing system (CMP) is provided. The retaining ring includes a retaining ring support and a sacrificial retaining ring, which is designed to confine a substrate to be polished. The included sacrificial retaining ring has an upper surface and a contact surface. The upper surface of the sacrificial retaining ring is configured to be attached to the retaining ring support, such that the retaining ring support holds the sacrificial retaining ring. Preferably, the contact surface of the sacrificial retaining ring is configured to be substantially planer with a top surface of the substrate being polished. In a preferred example, the sacrificial retaining ring can include a plurality of capillary tubes and is constructed from a material having substantially the same characteristics as the surface of the substrate to be polished.

Abstract: Tungsten CMP is conducted with improved alignment mark integrity and reduced edge residue by employing a retaining ring having a mechanical hardness greater than about 85 durometer and a relatively soft polishing pad. Embodiments of the present invention include conducting CMP employing a carrier comprising a retaining ring additionally having a wear rate during CMP of less than about 1 mil per hour and a polishing pad having a hardness less than about 60 durometer. Suitable retaining ring materials include ceramics, quartz, polymers and fiber reinforced polymers.

Abstract: A polishing apparatus is used for polishing a surface of a workpiece such as a semiconductor wafer or a glass substrate. The polishing apparatus comprises a polishing table having a polishing surface thereon, a plurality of workpiece holders each for holding a workpiece and pressing the workpiece against the polishing surface, and a controller for controlling the workpiece holders individually so that polishing operations of the workpiece holders are controlled independently of each other.

Abstract: A polishing method uses a dry particulate solids composition that is reconstituted into an aqueous composition for delivery to a polishing apparatus. In one aspect of the invention, the dry particulate solids composition is provided in a package size that is just substantially sufficient to make a reconstituted slurry for completing the polishing of a predetermined number of work pieces. The quantity of dry particulate solids delivered to a reconstitution apparatus can be an amount appropriate for polishing one work piece or a small number of work pieces, or the system can operate in larger batches or a continuous flow mode. The reconstituted aqueous polishing solution can be monitored for physical or chemical properties, filtered, blended with other chemical mixtures, or modified in other ways prior to being used in the polishing apparatus.

Abstract: A workpiece carrier holds a workpiece such as a semiconductor wafer and presses the workpiece against a polishing surface on a polishing table. The workpiece carrier has a top ring body for holding the workpiece, and a retainer ring for holding an outer circumferential edge of the workpiece. A fluid chamber which is supplied with a pressurized fluid such as a compressed air is provided in the top ring body and covered by a resilient membrane. A plurality of pressing members are fixed to the resilient membrane for applying a pressing force through the resilient membrane to the workpiece under the pressure of the fluid in the fluid chamber.

Abstract: A fixture for holding a workpiece in a machining apparatus comprises at least one opening having at least one flexible side for elastically holding the workpiece and a slot adjacent each of the at least one side for allowing the side to flex.

Abstract: A wafer polishing head utilizes a wafer backing member having a wafer facing pocket which is sealed against the wafer and is pressurized with air or other fluid to provide a uniform force distribution pattern across the width of the wafer inside an edge seal feature at the perimeter of the wafer to urge (or press) the wafer uniformly toward a polishing pad. Wafer polishing is carried out uniformly without variations in the amount of wafer material across the usable area of the wafer. A frictional force between the seal feature of the backing member and the surface of the wafer transfers rotational movement of the head to the wafer during polishing. A pressure controlled bellows supports and presses the wafer backing member toward the polishing pad and accommodates any dimensional variation between the polishing head and the polishing pad as the polishing head is moved relative to the polishing pad.

Abstract: The abrasive machine is capable of preventing deformation and bad abrasion of an abrasive cloth, maintaining flatness of an abrasive face of an abrasive plate and improving abrading accuracy. The abrasive machine comprises the abrasive plate and a holding unit for holding a work piece. In the holding unit, an inner head has a first concave section. An outer head has a second concave section. A holding plate is provided in the first concave section. An elastic holding member forms a first chamber. An outer enclosing member is provided to the outer head. An inner enclosing member is provided between the outer enclosing member and the inner head. A pressing member presses the abrasive face of the abrasive plate and encloses the holding plate. An elastic ring member a second chamber. A pressurizing unit pressurizes the chambers so as to press the work piece and the pressing member onto the abrasive face.

Abstract: A polishing apparatus has a guide (5) to be pressed against a polishing cloth (7) when polishing an object (1). Within the guide, a ring (3) is arranged between a backing plate (4) and a backing film (2). When the guide and polishing cloth are rotated to rub with each other, force of the periphery of the object of pressing the polishing cloth drops. The ring prevents such a force drop, thereby equalizing polishing rates over a surface of the object. Also provided is a polishing method applied to the polishing apparatus.

Abstract: A semiconductor substrate processing system for polishing a substrate that generally includes a platen and a web of polishing material disposed thereon. Embodiments of the system include a disposable cartridge for housing the web of polishing material, a shield member disposed proximate the web for preventing contamination of the unused portion of the web, a fluid delivery for fixing and freeing the web from the platen, apparatus for controlling the lateral movement of the web, and an apparatus for providing more linear feet of polishing material per height of a roll.

Abstract: A polishing apparatus is used for polishing a workpiece such as a semiconductor wafer to a flat mirror finish by a combination of chemical polishing and mechanical polishing. The polishing apparatus includes a turntable with a polishing cloth mounted on an upper surface thereof, a top ring for supporting the workpiece to be polished and pressing the workpiece against the polishing cloth, and a dressing tool for dressing the polishing cloth on the turntable. The polishing apparatus further includes a cover which covers an upper surface of the turntable for preventing liquid on the turntable from being scattered, and inserting holes formed in an upper wall of the cover for inserting the top ring and the dressing tool therethrough.

Abstract: A polishing apparatus is used for polishing a workpiece such as a semiconductor wafer to a flat mirror finish. The polishing apparatus includes a polishing section for polishing a surface of a workpiece, a cleaning section for cleaning the workpiece which has been polished, a first liquid leakage sensor provided in the polishing section for detecting a liquid leakage which occurs in the polishing section, and a second liquid leakage sensor provided in the cleaning section for detecting a liquid leakage which occurs in the cleaning section. The polishing apparatus further includes a controlling device for stopping the supply of liquid to the polishing section or the cleaning section in which the liquid leakage occurs when either one of the first and second liquid leakage sensors detects the liquid leakage.