Abstract: A method and apparatus for forming wafers of varying thickness'. The apparatus includes a template. The template is formed of a main disk including a plurality of cavities extending into a first side thereof and a backing plate positioned on a side of the main disk opposite the first side. Holding disks are moistened and positioned within respective cavities for releasably securing a wafer in the cavity. When the template is releasably secured to and rotatable with a rotating head and positioned such that the first side faces a lapping and polishing surface, wafers received by the cavities are lapped and polished upon rotation of the rotating head. A plurality of shims are selectively received within respective cavities between a base of the cavity and the holding disk for adjusting a depth of the cavity thereby adjusting an amount of a wafer to be lapped and polished. The shims have varying thickness' and are color coated, each color being representative of a predetermined thickness for the shim.

Abstract: A method for fabricating a semiconductor device includes grindstone surface activation treatment by means of a brush or ultrasonic wave carried out when a concave/convex pattern of a semiconductor wafer is planarized by polishing a semiconductor wafer held by a wafer holder by using a grindstone constituted of abrasive grains and material for holding the abrasive grains onto which the semiconductor wafer is pressed with relative motion. The semiconductor wafer is processed with high removal rate and the polishing thickness is controlled accurately.

Abstract: In a method for determining an endpoint in a chemical mechanical planarization (CMP) operation, the concentration of an oxidizing agent in the slurry byproduct generated during the CMP operation is monitored. The endpoint of the CMP operation is determined based on the concentration of the oxidizing agent in the slurry byproduct. The concentration of the oxidizing agent in the slurry byproduct may be monitored by diverting the slurry byproduct from a surface of a polishing pad, and measuring an optical property of the slurry byproduct diverted from the surface of the polishing pad. A CMP system configured to implement the method for determining an endpoint also is described.

Abstract: A system for controlling a mechanical or chemical-mechanical planarizing machine comprises a light system, a sensor, and a computer. The light system can have at least a first emitter that generates a first light pulse having a first color and a second emitter that generates a second light pulse having a second color different than the first color. The first and second light pulses reflect from a microelectronic substrate in a manner that creates a first return light pulse corresponding to a reflectance of the first light pulse and a second return light pulse corresponding to a reflectance of the second light pulse. The sensor receives the first return light pulse and the second return light pulse, and the sensor generates a first measured intensity of the first return light pulse and a second measured intensity of the second return light pulse. The computer has a database and a computer readable medium.

Abstract: A material with a mesh of fibers and a binder material holding the fibers in the mesh can be used on a carrier head or a polishing pad. A polishing apparatus can include a pad cleaner with nozzles to direct jets of cleaning fluid onto the polishing pad and a brush to agitate a surface of the polishing pad.

Abstract: The invention provides a method of polishing a nickel-containing substrate comprising (i) contacting the substrate with a chemical-mechanical polishing system comprising an abrasive, a polishing pad, or both an abrasive and a polishing pad, a silver salt comprising a silver ion, and a liquid carrier, and (ii) abrading at least a portion of the substrate to polish the substrate. The invention further provides a chemical-mechanical polishing system comprising (a) an abrasive, a polishing pad, or both an abrasive and a polishing pad, (b) a liquid carrier, (c) a silver salt comprising a silver ion, and (d) a secondary oxidizing agent, wherein the amount of the silver ion is about 0.1 wt. % to about 3 wt. % and the wt. % amount of the secondary oxidizing agent is about 3 times or less than the wt. % amount of the silver ion, based on the weight of the liquid carrier and anything dissolved or suspended therein.

Abstract: A polishing apparatus includes an arrangement of a plurality of units to deal with various operations and a robot having at least one arm. The plurality of units are disposed around the robot and include a loading unit for receiving thereon a, e.g. dry, workpiece to be polished, a polishing system including at least one polishing unit for polishing the workpiece, a washing system and a drying system at least including one washing unit for washing and drying the polished workpiece, and an unloading unit for receiving thereon a resultant clean and dry polished workpiece.

Abstract: A system for chemical mechanical planarization comprises a platen assembly for holding an object to be planarized and a polishing head comprising a puck holder assembly for coupling to a substrate for holding a polishing pad. The polishing pad is smaller in surface area than the object. The polishing head is movable from a first region overlying the platen assembly to a second region. The puck holder assembly comprises a backing surface for positioning the substrate, and a clamp ring positioned proximate to the backing surface for supplying mechanical force to the substrate to hold the substrate in place during a polishing operation. A spring mechanism is disposed in the housing for resiliently biasing the clamp ring toward the substrate.

Abstract: A method includes providing at least one wafer having a process layer formed thereon. A surface of the process layer is polished using a first polishing process that is comprised of a slurry and a first polishing pad. The slurry is removed from the surface of the process layer. The surface of the process layer is planarized using a substantially slurryless second polishing process that is comprised of a second polishing pad that is more abrasive than the first polishing pad. A system includes a polishing tool and a process controller. The polishing tool is adapted to receive at least one wafer having a process layer formed thereon. The polishing tool is a adapted to polish a surface of the process layer using a first polishing process that is comprised of a slurry and a first polishing pad and remove the slurry from the surface of the process layer.

Abstract: A fluid delivery system is provided for delivering a fluid to a polishing surface of a chemical mechanical polishing tool. The system includes a polishing pad having a plurality of apertures, a plurality of layers having a network of grooves and a platen having an aperture. A fluid may be communicated to the aperture in the platen, through the grooves in the plurality of layers and finally through the plurality of apertures in the polishing pad. The size, position and number of apertures in the platen and the polishing pad and the size, position and number of grooves in each of the layers may be varied to control the distribution of fluid across the top surface of the polishing pad. Preferably, the distance a fluid must travel from the platen aperture through the grooves to any of the apertures in the polishing pad is substantially the same.

Abstract: A calibration device for a pad conditioner head of a CMP machine includes a lower first horizontal member defining an arcuate reference surface having a shape complementary to that of the outer peripheral edge of the platen of the machine, an upper second horizontal member spaced vertically from the first member and having a reference mark thereon lying in the projected plane of the reference surface, and a connecting member interconnecting the first member and second member. When the reference surface of the first horizontal member of the calibration device is be butted against the outer peripheral edge of the platen adjacent the head of the pad conditioner, the location of the outermost portion of the head of the pad conditioner relative to the reference mark is readily observable. Thus, the extent to which the outermost portion of the head of the pad conditioner is vertically aligned relative to the outer peripheral edge of the platen can be easily and accurately determined.

Abstract: A polishing surface is conditioned by pressing a diamond dresser against the polishing surface to thinly shave a surface of the polishing surface. Foreign matter clogging concavities formed in the polishing surface is scraped by pressing a brush dresser against the polishing surface in a state such that a polishing liquid is not supplied to the polishing table. A liquid composed of a mixture of a liquid or inert gas with pure water or a chemical liquid is ejected onto the polishing surface to clean the polishing surface.

Abstract: One aspect of the present invention relates to an in-line system for monitoring and optimizing an on-going CMP process in order to determine a CMP process endpoint comprising a wafer, wherein the wafer is subjected to the CMP process; a CMP process monitoring system for generating a signature related to wafer dimensions for the wafer subjected to the CMP process; and a signature library to which the generated signature is compared to determine a state of the wafer. Another aspect relates to an in-line method for monitoring and optimizing an on-going CMP process involving providing a wafer, wherein the wafer is subjected to a CMP process; generating a signature associated with the wafer; comparing the generated signature to a signature library to determine a state of the wafer; and using a closed-loop feedback control system for modifying the on-going CMP process according to the determined state of the wafer.

Abstract: A chemical mechanical polishing system is provided having one more polishing stations. The polishing stations include a platen and pad mounted to an upper surface of the platen. The upper surface of the platen is patterned to define a raised area and a recessed area. The raised area provides a rigid mounting surface for the pad and the recessed area provides the pad a desired degree of flexibility and compliance of the pad when brought into contact with a substrate.

Abstract: A method and apparatus for releasably attaching a planarizing medium, such as a polishing pad, to the platen of a chemical-mechanical planarization machine. In one embodiment, the apparatus can include several apertures in the upper surface of the platen that are coupled to a vacuum source. When a vacuum is drawn through the apertures in the platen, the polishing pad is drawn tightly against the platen and may therefore be less likely to wrinkle when a semiconductor substrate is engaged with the polishing pad during planarization. When the vacuum is released, the polishing pad can be easily separated from the platen. The apparatus can further include a liquid trap to separate liquid from the fluid drawn by the vacuum source through the apertures, and can also include a releasable stop to prevent the polishing pad from separating from the platen should the vacuum source be deactivated while the platen is in motion.

Abstract: A method for controlling a process in a multi-zonal processing apparatus and specifically for determining the optimum values to set for processing parameters J(Zi) in each of the zones of that apparatus includes processing a test work piece in the apparatus with initial values Jl(Zi) of the parameters in each zone i to achieve a process result Ql(x). Then a process result Qf(x) to be expected from incremental changes in the parameters to values Jf(x) is calculated. The expected process results Qf(x) are related to the initial process results Ql(x) by the relationship: Qf(x)=Ql(x)*Jf(x)/Jl(x). After determining optimum values of J(Zi) to reduce the difference between the expected process result and a target process result, a work piece is processed through the process apparatus using those optimum values of J(Zi).

Abstract: A processing machine including a movable support which can mount either one of a processing part and a workpiece and which can reciprocate between a first position and a second position, and a reciprocating part for reciprocating the movable support. A protective part is provided on the upstream side and/or downstream side of the movable support. The protective part includes at least one protective member with a synthetic resin sheet or a film that can be kept rolled in a free state when tensile force is not applied to the protection member and unrolled when tensile force is applied to the member. The protective member is rolled and unrolled by forward and backward movement of the movable support.

Abstract: A diaphragm for a chemical mechanical polisher is composed of a rubber layer and a fiber layer. The size and shape of the diaphragm are suitably designed according to a gap and relative shifting between the rotary unit and holder to prevent creasing of the diaphragm and thereby decrease friction with a sidewall of the rotary unit and holder. The fibrous layer can improve the strength of the diaphragm in order to improve the lifetime of the diaphragm, reduce the frequency of maintenance of the polisher, and increase throughput.

Abstract: The invention includes a semiconductive processing method of electrochemical-mechanical removing at least some of a conductive material from over a surface of a semiconductor substrate. A cathode is provided at a first location of the wafer, and an anode is provided at a second location of the wafer. The conductive material is polished with the polishing pad polishing surface. The polishing occurs at a region of the conductive material and not at another region. The region where the polishing occurs is defined as a polishing operation location. The polishing operation location is displaced across the surface of the substrate from said second location of the substrate toward said first location of the substrate. The polishing operation location is not displaced from said first location toward said second location when the polishing operation location is between the first and second locations.

Abstract: A polishing apparatus is used for polishing a surface of a workpiece such as a semiconductor wafer or a glass substrate. The polishing apparatus comprises a polishing table having a polishing surface thereon, a plurality of workpiece holders each for holding a workpiece and pressing the workpiece against the polishing surface, and a controller for controlling the workpiece holders individually so that polishing operations of the workpiece holders are controlled independently of each other.

Abstract: A polishing head for holding a wafer during a polishing process without the edge-effect or the edge peeling defect and a method for improving edge profile on a wafer during a polishing process are described. The polishing head is constructed by a carrier head, a retaining ring, and at least three piezoelectric actuator/sensors mounted in-between a recessed peripheral edge portion of the carrier head and a top surface of the retaining ring.

Abstract: The polishing pad for a chemical mechanical polishing apparatus and method of making the same has a polishing pad with a bottom layer, a polishing surface on a top layer and a transparent sheet of material interposed between the two layers. Slurry from the chemical mechanical polishing process is prevented from penetrating the impermeable transparent sheet to the bottom layer of the polishing pad.

Abstract: The present invention includes a platen having a plurality of concentric fluid-tight plenums for receiving fluids. One or more fluid delivery systems may be used to control the flow rate and composition of fluids communicated to the plenums. The top surface of the platen may have holes for allowing the fluids, once inside the plenums, to travel to the top surface of a polishing pad. By controlling the flow rate and composition of fluids, the material removal rate on the front surface of the wafer may also be controlled. The polishing pad is preferably orbited during the planarization process. A metrology instrument may be used for measuring the front surface of the wafer. Data regarding the measurements may be used by a computer to determine if different flow rates and/or composition of fluids should be used to compensate for nonuniform polishing of the wafer.

Abstract: An apparatus for conditioning the polishing pads of a chemical-mechanical polishing system includes a tool having a cutting tip and positioned almost perpendicular to the surface of the polishing pad arranged on a rotary surface table of the system. The apparatus also has a horizontal moving unit for moving the tool in a direction almost parallel to the surface of the polishing pad, a base unit positioned at a side of the rotary surface table and supporting the horizontal moving unit, and a vertical moving unit for adjusting a vertical position of the tool relative to the surface of the polishing pad. The conditioning apparatus precisely determines a target depth of cut in a polishing pad by moving the tool in a vertical direction, thus allowing the tool to precisely flatten the surface of the polishing pad during a conditioning process.

Abstract: A wafer carrier assembly (51) places a semiconductor wafer in angular compliance with a polishing media. The wafer carrier assembly (51) includes a first assembly and a second assembly. The second assembly inclines freely in any direction for providing angular compliance.

Abstract: Apparatus and methods of automated wafer-grinding using grinding surface position monitoring. In one embodiment, an apparatus for grinding a working surface includes a grinding surface engageable with at least a portion of the working surface, and a feed mechanism that controllably adjusts a position of the grinding surface. The apparatus further includes a position sensor that senses a position of the grinding surface along an axis approximately normal to the working surface and a controller that receives a position signal from the position sensor and transmits a control signal to the feed mechanism in response to the position signal. In alternate embodiments, the position sensor may be an acoustic sensor, an optical sensor, or another type of sensor. The grinding surface may include a grinding material suspended in a binder, the grinding material being worn during grinding.

Abstract: A method and apparatus for planarizing a microelectronic substrate. The apparatus can include a planarizing medium having a relatively hard polishing pad and a planarizing liquid disposed on a generally non-porous planarizing surface of the polishing pad. The planarizing liquid can include a colloidal suspension of colloidal particles having generally smooth external surfaces. The colloidal particles can have a variety of shapes, including a spherical shape, a cylindrical shape, a cubic shape, and a hexagonal shape, among others. The colloidal particles can be formed from a variety of materials, including silicon dioxide, manganese oxide, and cerium oxide.

Abstract: A polishing apparatus includes a table on which a polishing target member is placed, and at least one nozzle which sprays a polishing solution to a surface of the polishing target member so as to form, by polishing, the surface of the polishing target member. The nozzle and the polishing target member move relative to each other, and an angle of the nozzle is changeable.

Abstract: The invention provides a process apparatus including a wafer holder, and a process method, in which high planarization performance, scratch free process, narrow edge exclusion and high uniformity can be maintained for more than 10,000 processed wafers. The invention is achieved by providing a unit for keeping a retainer and surface of a polishing wheel non-contact with each other and controlling the gap within a certain range and by setting compression strength of the retainer at more than 3,000 kg/cm2.

Abstract: The apparatus and method for producing a substrate whose surface includes a metallic wire by polishing the substrate surface. A polishing liquid is supplied to a clearance between the substrate and the surface of a polishing pad. The polishing liquid includes an acid which dissolves the oxidized part of the substrate surface and is substantially free of solid abrasive powder. A relative movement is generated between the substrate surface and the polishing pad surface while the substrate surface is pressed against the polishing pad surface while the polishing liquid is supplied so that the dissolved oxidized part of the substrates surface can be removed from the substrate.

Abstract: A linear drive mechanism for chemical mechanical polishing includes a substrate carrier and support system which employs at least one linear motor to drive the substrate carrier through polishing motions. An additional driver for driving at least a portion of the carrier in directions perpendicular to the motions supplied by the linear motor(s) is also included. A clamping flexure is provided to selectively lock the substrate carrier in a vertical position. The substrate carrier, in one embodiment is mounted to a vertical driver via a column. The column is guided by spiral flexures to prevent motion in directions normal to vertical. An air mount is provided to support the majority of the mass of the substrate carrier, so that only a small force need be applied by the additional driver for movements in the vertical direction. Another, linear drive mechanism is described as using a “Sawyer motor” for both polishing motions as well as vertical force application.

Abstract: The present invention provides a polishing slurry reclamation system. In one embodiment, the polishing slurry reclamation system comprises a polishing apparatus having a polishing platen and a fluid delivery system positioned to deliver a slurry or a rinse to the polishing platen, a recovery drain adjacent the polishing platen, and a fluid diverter associated with the platen and configured to deflect a selected one of a slurry or rinse emanating from the polishing platen to the recovery drain.

Abstract: Provided are a wafer polishing method in which, in single side polishing, covering a wafer holding surface (one side surface) with a protective film, a wafer polishing surface (the other side surface) is polished, so that the wafer holding surface can be prevented from being etched and contaminated by a polishing agent; a wafer cleaning method in which the protective film that remains behind on the wafer holding surface after polishing can be efficiently removed, and a waste cleaning solution is easily treated; and a wafer protective film that sufficiently covers the wafer holding surface in polishing but is effectively removed in cleaning.

Abstract: There is disclosed a method for polishing a work wherein polishing liquid is supplied to a polishing pad, and a relative movement is carried out between the work and the polishing pad with pressing the work on the polishing pad, wherein the work of which press pressure was set to 0 to terminate polishing is released from the polishing pad within 45 seconds after the termination of polishing. When plural works are simultaneously polished, preferably only the work to which press pressure was set to 0 to terminate polishing is released from the polishing pad, and polishing of the other works is continued, which are released from the polishing pad after press pressure thereto is set 0 one by one.

Abstract: In order to measure a thickness of a surface to be polished of a material to be polished for a short time, two-dimensional images are obtained from a light reflected from the surface to be polished of the material to be polished, a location at which a thickness is to be observed is specified by the obtained two-dimensional images, and thickness measurement is carried out.

Abstract: A method and apparatus for the wireless transfer of measurements made during chemical-mechanical planarization of semiconductor wafers with a planarizing machine. The apparatus includes a sensor connected to the semiconductor substrate or a movable portion of the planarizing machine. The apparatus further comprises a display spaced apart from the sensor and a wireless communication link coupled between the sensor and the display to transmit a signal from the sensor to the display. The wireless communication link may include an infrared link, a radio link, an acoustic link, or an inductive link. The sensor may measure force, pressure, temperature, pH, electrical resistance or other planarizing parameters. The sensor may also detect light reflected from a reflective surface of a substrate that is used to calibrate the planarizing machine.

Abstract: Planarizing machines and methods for endpointing or otherwise controlling mechanical and/or chemical-mechanical planarization of microelectronic-device substrates. In one embodiment of the invention, a method for planarizing a microelectronic substrate assembly includes removing material from the substrate assembly during a planarizing cycle by contacting the substrate assembly with a planarizing medium and moving the substrate assembly and/or the planarizing medium relative to each other. The method can also include controlling the planarizing cycle by predicting a thickness of an outer film over a first region on the substrate assembly and providing an estimate of an erosion rate ratio between the first region and a second region.

Abstract: A polishing apparatus includes an arrangement of a plurality of units to deal with various operations and a robot having at least one arm. The plurality of units are disposed around the robot and include a loading unit for receiving thereon a, e.g. dry, workpiece to be polished, a polishing system including at least one polishing unit for polishing the workpiece, a washing system and a drying system at least including one washing unit for washing and drying the polished workpiece, and an unloading unit for receiving thereon a resultant clean and dry polished workpiece.

Abstract: A polishing apparatus includes an electrode constituted as a plurality of electrode elements, a device of driving the electrode, and dielectric abrasive particles disposed between the electrode and a workpiece. Polishing pressure is applied to the particles by a Coulomb force generated when an alternating-current voltage is applied to the electrode.

Abstract: A fluid delivery line is configured to provide slurry to a planarization process, e.g., of a planarization machine. Slurry within the delivery line is provided successive forward and reverse flows. Preferably, the flow reversals are performed on a supply side of a metering pump which is used for dispensing slurry from the delivery line to a planarization pad of the planarization machine. In another embodiment, a slurry distribution system comprises a pump configured to flow slurry from a slurry reservoir to a forward delivery line. A plurality of drop lines tap into the forward line along its length. A return line returns slurry from the forward line to the slurry reservoir. A variable volume cavity is coupled in fluid communication with the return line, and is operated with plus/minus volume displacements. Additionally, a passive or active mixer may be disposed in-line with the return line and at a location between the slurry reservoir and the variable volume cavity.

Abstract: A window member (11) having an intentionally designed distribution of refractive index is used, as a transparent window member in a light transmission area of a polishing pad for detecting the end point of polishing by a CMP method. This window member (11) has areas (11a) having a high refractive index and areas (11b) having a low refractive index in its window face. In a cross section normal to the window face, the high-refractive index areas (11a) and the low-refractive index areas (11b) are alternately arranged in stripes. These areas (11a and 11b) in the window face are in a Fresnel zone plate arrangement in which the first area (center circle) is a bright one (area having a high refractive index). A plurality of such Fresnel zone plates (F) are arrayed in a matrix in the window face of the window member (11).

Abstract: A chemical mechanical polishing apparatus has a rotatable platen, a generally linear polishing sheet having an exposed portion extending over a top surface of the platen for polishing the substrate, and a drive mechanism to incrementally advance the polishing sheet in a linear direction across a top surface of the platen. The apparatus includes a hydrophobic layer for substantially preventing aqueous liquid which penetrates under the polishing sheet from wetting a lower surface of the polishing sheet. The polishing sheet is releasably secured to the platen to rotate with the platen, and it has a width greater than a diameter of the substrate.

Abstract: A chemical mechanical planarization system and methods for implementing infrared detection of process state and substrate surface composition are provided. In one example, the chemical mechanical planarization system includes a substrate chuck to hold and rotate a substrate, a preparation head mounted on a preparation carrier, and a conditioning head mounted on a conditioning carrier. The preparation head is configured to be applied against the substrate, overlapping at least a portion of the substrate of an area smaller than the entire surface area of the substrate. The system further includes an infrared sensor positioned over the substrate to sense infrared emissions from the surface of the substrate. Several examples of infrared sensors are provided including single point, scanning, and array infrared sensors. In another example, a method of determining process state and surface composition of a substrate using infrared sensing is provided.

Abstract: A method for polishing wafers includes providing a wafer having a process layer formed thereon; providing a polishing tool having a plurality of control zones and being adapted to polish the process layer based on an operating recipe, the operating recipe having a control variable corresponding to each of the control zones; measuring a pre-polish thickness profile of the process layer; comparing the pre-polish thickness profile to a target thickness profile to determine a desired removal profile; determining values for the control variables associated with the control zones based on the desired removal profile; and modifying the operating recipe of the polishing tool based on the values determined for the control variables. A processing line includes a polishing tool, a metrology tool, and a process controller. The polishing tool is adapted to polish a wafer having a process layer formed thereon based on an operating recipe.

Abstract: The present invention relates to an apparatus and method for polishing substrate surfaces. The method can include the steps of holding a substrate against a polishing surface and depositing slurry on the polishing surface. The method can further include the step of moving the holding device in a substantially curvilinear path relative to the polishing surface, or the step of moving the polishing surface in a substantially curvilinear path relative to the holding device. The apparatus comprises a polishing surface, a holding device for holding a substrate against the polishing surface, and a slurry supply system for depositing slurry on the polishing surface. The apparatus further includes a moving structure for moving the holding device in a substantially curvilinear path along the polishing surface, or a moving structure for moving the polishing surface in a substantially curvilinear path relative to the holding device. The substantially curvilinear path is preferably substantially a figure eight path.

Abstract: A process for the surface polishing of a silicon wafer, includes the successive polishing of the silicon wafer on at least two different polishing plates covered with polishing cloth, with a continuous supply of alkaline polishing abrasive with SiO2 constituents, an amount of silicon removed during the polishing on a first polishing plate being significantly higher than on a second polishing plate, with the overall amount of silicon removed not exceeding 1.5 &mgr;m. A polishing abrasive (1a), then a mixture of a polishing abrasive (1b) and at least one alcohol, and finally ultrapure water (1c) are added to the first polishing plate, and a mixture of a polishing abrasive (2a) and at least one alcohol and then ultrapure water (2b) are added to the second plate.

Abstract: A carrier head of a chemical mechanical polishing apparatus to apply and distribute a polishing slurry to a polishing pad. The retaining ring includes a trough and one or more channels to channel the polishing slurry to the polishing pad.

Abstract: An apparatus for manufacturing a semiconductor device includes a rotatable spindle, a head detachably connected to the spindle, and a clamp for clamping outer circumferential surfaces of the spindle and the head to one another so that the head may be driven by the spindle. The clamp has an annular clamping frame sized to encircle the outer circumferential surfaces of the spindle and the head, a projection disposed on one end of the clamping frame, a lever pivotally connected to the other end of the clamping frame, and a fastener pivotally connected to the lever and configured to hook over the projection. Once the fastener is hooked over the projection, the lever is pivoted to force the ends of the annular clamping frame together and thereby produce a clamping force that secures the spindle and head to one another. The clamp can be manipulated easily and with a simple motion to clamp the head to the spindle. Also, the parts of the clamp generate little mechanical friction.

Abstract: A polishing pad has a first layer, a second layer, a hole and a plug. The hole is formed in the polishing pad and has a first section in the first layer of the polishing pad and a second section in a second layer of the polishing pad. The plug is embedded in the hole and has an upper portion and a lower portion. The upper portion of the plug fits into the first section of the hole, and the lower portion of the plug fits into the second section of the hole. Since the plug has a height of the polishing pad, the problem of depositions, such as water droplets, has been solved. The endpoint detection can thus be precisely controlled.

Abstract: A polishing apparatus comprises a polishing member that has a wide stable polishing range to perform effective polishing, even if a rotation axis moves away from the edge of a workpiece. A polishing member holder holds the polishing member, and a workpiece holder holds the workpiece to be polished. A drive device produces a relative sliding motion between the polishing member and the workpiece. At least one holder of either the polishing member holder or the workpiece holder is rotatable about a rotation axis and is tiltable with respect to other holder. Such one holder is provided with a pressing mechanism to stabilize orientation or desired posture of the one holder by applying an adjusting pressure to the one holder at a location away from the rotation axis.