Abstract: This invention pertains to a polishing apparatus for polishing a semiconductor wafer. The apparatus comprises a storage section that is capable of receiving a workpiece to be polished and a polished workpiece. The polishing unit that polishes the workpiece includes a primary polishing table and a secondary polishing table, wherein the polishing surface of the secondary polishing table is constructed to be arranged such that at least a portion of a surface of the workpiece being polished by the polishing surface of the secondary polishing table extends beyond an edge of the polishing surface of the secondary polishing table. Also provided is a film thickness measuring device, which measures the thickness of a film formed on a polished workpiece while the polished workpiece is held by a top ring above a pusher.

Abstract: Methods and systems to detect defects in an end effector for conditioning polishing pads used in polishing micro-device workpieces are disclosed herein. In one embodiment, a method of detecting defects in an end effector includes applying energy to a contact element of the end effector and determining a natural frequency of the contact element. Applying energy can include transmitting ultrasonic energy from a transducer to the contact element. The method can further include comparing the natural frequency of the contact element to a predetermined frequency limit to detect a defect. In another embodiment, a system to detect defects includes a conditioner having an end effector with a contact element, a transducer for applying energy to the contact element, and a controller operatively coupled to the conditioner and the transducer. The controller has a computer-readable medium containing instructions to perform the above-mentioned method.

Abstract: The end portion on the side of the second end surface of the first optical fiber 62 is inserted into the inner race in the central part of the roll-bearing type bearing 36, and is fastened to this inner race. The fastening position of this end surface on the side of the second end surface is adjusted to match a specified position on the axis of rotation 11 in order to emit probe light and allow the incidence of the reflected signal light. The probe light emitted from the second end surface of the second optical fiber 61 passes through the transparent window 23 and is caused to illuminate the polished surface of the substrate 42. The reflected signal light that is reflected from this point again passes through the transparent window 23 in the opposite direction, and is incident on the second end surface of the second optical fiber 61.

Abstract: A triangular pad of the type shown in FIG. 5(a) which has circular tip ends is used as the polishing pad. This shape corresponds to the concept of partially cutting the outer edge of the polishing pad in order to shorten the contact time of the polishing pad and wafer at the outer circumference of the wafer regardless of the swing speed. As shown in the figure, a circular bored part with a diameter of 50 mm is provided in the center of such a polishing pad. By using this polishing pad and dividing the swing width into ten, it is possible to keep the product of the integrated value of the relative linear velocity, the integrated value of the pressure, and the integrated value of the contact time at various points within the wafer surface within ±30% of the mean value in each swing width under feasible swing conditions. Thus, the use of such a polishing pad makes it possible to perform uniform polishing.

Abstract: An apparatus, as well as a method, determines an endpoint of chemical mechanical polishing a metal layer on a substrate. The method of the apparatus includes bringing a surface of a substrate into contact with a polishing pad that has a window; causing relative motion between the substrate and the polishing pad; directing a light beam through the window, the motion of the polishing pad relative to the substrate causing the light beam to move in a path across the substrate; detecting light beam reflections from the substrate and a retaining ring; generating reflection data associated with the light beam reflections; dividing the reflection data into a plurality of radial ranges; and identifying the predetermined pattern from the reflection data in the plurality of radial ranges to establish the endpoint.

Abstract: A method and apparatus for improving uniformity of the rate of removal of material from the surface of a workpiece, such as semiconductor substrate, by polishing. In accordance with the invention, the workpiece is subjected to a vibratory polishing method, and optionally at least one additional polishing motion selected from rotational, oscillating, sweeping, orbital and linear polishing motions. As a result, polished workpieces, such as semiconductor wafers, have reduced surface defects, improved planarity, and are polished more uniformly over a wider area.

Abstract: A computer-controlled slurry supplying apparatus for providing abrasive slurry to a chemical mechanical polishing (CMP) machine in a semiconductor manufacturing process preferably comprises a storage portion for accepting and storing a quantity of undiluted slurry, a mixing portion for accepting undiluted slurry from the storage portion and mixing with a diluting solution to created a diluted slurry, a supply portion for holding the diluted slurry, and at least one point-of-use mixing unit for mixing at least one chemical additive to the diluted slurry at or near a dispensing nozzle at the point of application. Each of the above portions of the slurry supplying apparatus further includes a re-circulation means for keep solutions in a mixed and agitated state. A method for using the slurry supplying apparatus comprises steps of controllably operating various valves, pumps, and sensors to maintain a desired slurry composition and flow rate.

Abstract: A polishing stage is mounted on a body provided with a rough grinding stage and a fine grinding stage so that a wafer can be roughly ground, finely ground and polished in one planarization apparatus. The planarization apparatus also has a cleaning stage for cleaning a polishing pad of the polishing stage to thereby clean the dirty cleaning pad. The planarization apparatus is also provided with an etching unit to thereby perform a sequence of planarization from the rough grinding to the etching.

Abstract: A polishing head for use in an apparatus for chemically-mechanically polishing semiconductor wafers is provided. The polishing head includes a first side having at least a portion thereof operably connectable with a spindle on the apparatus; and a second side opposite the first side, the second side having a substantially spherical cap shape comprising an outer region adapted to apply a first force onto a semiconductor wafer against a polishing pad, and an inner region adapted to apply a second force onto the semiconductor wafer against the polishing pad, the second force being different from the first force, whereby the first force and the second force cause the polishing pad to planarize the semiconductor wafer substantially uniformly. A method of polishing semiconductor wafers is also provided.

Abstract: The polishing pad for a chemical mechanical polishing apparatus, and a method of making the same. The polishing pad has a covering layer with a polishing surface and a backing layer which is adjacent to the platen. A first opening in the covering layer with a first cross-sectional area and a second opening in the backing layer with a second, different cross-sectional area form an aperture through the polishing pad. A substantially transparent polyurethane plug is positioned in the aperture, and an adhesive material fixes the plug in the aperture.

Abstract: A chemical mechanical polishing apparatus is described, which includes a platen, a polishing pad that is attached to the platen, and a means for adjusting the temperature of the polishing pad.

Abstract: A polishing cloth mounted on a turntable is dressed by bringing a dresser in contact with the polishing cloth for restoring the polishing capability of the polishing cloth. The dressing is performed by measuring heights of a surface of the polishing cloth at radial positions of the polishing cloth in a radial direction thereof determining a rotational speed of the dresser with respect to a rotational speed of the turntable on the basis of the measured heights, and dressing the polishing cloth by pressing the dresser are rotating. The dresser has an annular diamond grain layer or an annular SiC layer.

Abstract: In a polishing apparatus, a polishing tool including abrasive particles and a binder for bonding together the abrasive particles is pressed against a substrate to polish the substrate. The polishing apparatus has a light source for irradiating a polishing surface with light rays for weakening a bond force of the binder for bonding together the abrasive particles, and a waste matter removing mechanism for forcefully removing waste matter produced by polishing or waste matter produced by irradiation. By irradiating the polishing surface with the light rays, dressing of the polishing surface is performed, and products resulting from dressing and the like are removed. The polishing apparatus supplies abrasive particles to the polishing surface stably by dressing and allows high-speed polishing of the substrate.

Abstract: Chemical mechanical polishing (CMP) equipment for use in planarizing a semiconductor wafer prevents slurry from being deposited on the surfaces of respective components of the equipment. The CMP equipment includes a turntable, a polishing pad mounted to the table so as to rotate with the table, a slurry supply unit for dispensing slurry onto the polishing pad, a polishing head unit for pressing a wafer downward atop the polishing pad, a conditioning unit for scoring the pad to maintain the surface of the polishing pad uniform, and a cleaning fluid supply unit. The cleaning solution supply unit has at least one spray nozzle by which cleaning solution is sprayed onto the polishing pad and respective components of the CMP equipment.

Abstract: A novel retaining ring having a wear pad of such construction, design and material such that it provides improved resistance to wear and/or degradation as compared to currently available products for use in the chemical mechanical planarization (CMP) of semiconductor wafers and similar materials. The retaining ring with wear pad of the invention is able to withstand increased operating temperatures and pressures at the polishing surface of the wafer with less wear than would normally be encountered with currently used materials and designs. The ability to operate at increased temperature and pressure can accelerate the rate of removal of material from a semiconductor wafer in some processes.

Abstract: The invention provides a polishing composition comprising (i) an abrasive comprising (a) about 5 to about 45 wt. % of first abrasive particles having a Mohs' hardness of about 8 or more, (b) about 1 to about 45 wt. % of second abrasive particles having a three-dimensional structure comprising aggregates of smaller primary particles, and (c) about 10 to about 90 wt. % of third abrasive particles comprising silica, and (ii) a liquid carrier. The invention also provides a method of polishing a substrate, which method comprises the steps of (i) providing the above-described polishing composition, (ii) providing a substrate having a surface, and (iii) abrading at least a portion of the substrate surface with the polishing composition to polish the substrate.

Abstract: A gimbal assembly that can be used in conjunction with semiconductor fabrication tools, such as chemical-mechanical polishing (CMP) tools, as well as other types of tools, is disclosed. A gimbal assembly may include a gimbal hub, a pivot head plate, a gimbal sleeve, and a gimbal post. The gimbal hub has an interior cavity. The pivot head plate has a ball head, a base, and an outer edge, where the base is situated in the bottom of the interior cavity. The gimbal sleeve is situated in the bottom of the interior cavity over the outer edge of the pivot head plate, securing the pivot head plate in place within the interior cavity. The gimbal post is situated over the ball head of the pivot head plate. The ball head of the pivot head plate preferably has dual diameters.

Abstract: A polishing pad conditioner for a chemical-mechanical polishing apparatus includes a conditioning plate having a first recess and a holder having a second recess. The first recess is formed on the upper face of the conditioning plate, and the second recess is formed on the bottom face of the holder. A first filling member having a specific gravity smaller than that of the conditioning plate fills up the first recess, and a second filling member having a specific gravity smaller than that of the holder fills up the second recess. Therefore, the weight of the polishing pad conditioner can be reduced, and the durability and service life of an air bladder that adjusts the height of the polishing pad conditioner can be improved.

Abstract: A conductive polishing pad that includes one or more anodes and one or more cathodes formed at or near the polishing surface of a polishing pad. The anodes and cathodes are connected to a wiring network that is part of an electrical connector system that allows for a current source to be connected to the polishing pad and provide a current to the anodes and cathodes even if the polishing pad is moving relative to the current source. An electrolytic polishing fluid introduced between the polishing surface and the metal layer of a wafer forms an electrical circuit between the anode, cathode and the metal layer. The conductive polishing pad allows for electrochemical mechanical polishing (ECMP) to be performed on a conventional chemical mechanical polishing (CMP) tool.

Abstract: A carrier head for chemical mechanical polishing of a substrate having a front surface, a back surface and an edge. The carrier head has a base, an inner retaining ring positioned beneath the base, and an outer retaining ring surrounding the inner retaining ring to retain the inner retaining ring. The inner retaining ring has a main portion with a first surface to apply a load to a perimeter portion of the back surface of the substrate and an annular lower projection protruding downwardly from the main portion with a second surface to circumferentially surround the edge of the substrate to retain the substrate.

Abstract: A polishing pad for polishing semiconductors and other planar substrates in the presence of a slurry comprising abrasive particles and a dispersive agent is disclosed. The polishing pad includes a soluble component within a polymer matrix component. The soluble component includes particles soluble in the slurry sufficiently to provide a void structure in the polishing surface of the pad. The void structure enhances the polishing rate and uniformity by increasing the mobility of the abrasive particles while reducing scratching of the polished surface. Additives that further enhance polishing and/or assist in the removal of residues generated during polishing, such as surfactants and removers, are optionally incorporated in the soluble particles or topographically coated on the soluble particles.

Abstract: A polishing apparatus (100) is provided for polishing a substrate (102) that has slurry distributor (125) which improves planarization uniformity. Generally, the apparatus (100) includes: (i) a platen (106) with a polishing surface (110); (ii) a head (116) adapted to hold the substrate (102) against the polishing surface; (iii) a mechanism to rotate the platen (106) during polishing; (iv) a dispenser (124) having nozzles (126, 128) to dispense slurry on the surface (110); and (v) a distributor (125) between the nozzles (126, 128) and the head (116). In one embodiment, the apparatus (100) further includes a wiper (180) between the head (116) and the distributor (125) to remove used slurry and polishing byproducts from the surface (110), thereby reducing agglomerations or deposits that can damage the substrate (102) and improving yield.

Abstract: Apparatuses and methods for conditioning polishing pads used in polishing micro-device workpieces are disclosed herein. In one embodiment, an end effector for conditioning a polishing pad includes a member having a first surface and a plurality of contact elements projecting from the first surface. The member also includes a plurality of apertures configured to flow conditioning solution to the polishing pad. The apertures can extend from the first surface to a second surface opposite the first surface. The member can further include a manifold that is in fluid communication with the apertures. In another embodiment, a conditioner for conditioning the polishing pad includes an arm having at least one spray nozzle configured to spray conditioning solution onto the polishing pad and an end effector coupled to the arm. The end effector includes a first surface and a plurality of contact elements projecting from the first surface.

Abstract: Systems and methods for characterizing a polishing process are provided. One method includes scanning a specimen with two or more measurement devices during polishing. In one embodiment, the two or more measurement devices may include a reflectometer and a capacitance probe. In another embodiment, the two or more measurement devices may include an optical device and an eddy current device. An additional embodiment relates to a measurement device for scanning a specimen during polishing. The device includes a light source and a scanning assembly. The scanning assembly is configured to scan light from the light source across the specimen during polishing. Another measurement device includes a laser light source coupled to a first fiber optic bundle and a detector coupled to a second fiber optic bundle. An additional method includes scanning a specimen with different measurement devices during different steps of a polishing process.

Abstract: A polishing pad assembly for use in a chemical-mechanical polishing apparatus comprises a polishing pad having at least a first aperture therethrough and a platen for supporting the polishing pad having a second aperture therethrough at least a portion of which is larger than the first aperture. A substantially transparent plug includes at least a first section having a first dimension for positioning substantially within the first aperture and at least a second section having a second dimension larger than the first dimension for positioning substantially within the second aperture. The optical plug is made of a polymeric material which may be press-fit through the platen into polishing pad.

Abstract: The present invention discloses a repair apparatus for compact disks comprising a casing unit having a top housing and a bottom housing openably fastened to the top housing; a transmission module disposed within the bottom housing, including a motor, a disk supporting pedestal for supporting the compact disk and being connected with the motor, and a repair base adjacent the disk supporting pedestal; a repair member disposed within the repair base, including a grinding element or a cleaning element at the upper surface thereof for operable rotational contact with the repair area; and a disk-depressing mechanism including an upper cover connected to the top housing, a disk-depressing member operably contacted with the compact disk, and a plurality of spherical bodies rotatably and movably disposed between the upper cover and the disk-depressing member.

Abstract: A method and apparatus for planarizing a microelectronic substrate. In one embodiment, the apparatus can include a membrane formed from a compressible, flexible material, such as neoprene or silicone, and having a first portion with a thickness greater than that of a second portion. The membrane can be aligned with the microelectronic substrate to bias the microelectronic substrate against a planarizing medium such that the first portion of the membrane biases the microelectronic substrate with a greater downward force than does the second portion of the membrane. Accordingly, the membrane can compensate for effects, such as varying linear velocities across the face of the substrate that would otherwise cause the substrate to planarize in a non-uniform fashion or, alternatively, the membrane can be used to selectively planarize portions of the microelectronic substrate at varying rates.

Abstract: A carrier head for chemical mechanical polishing of a substrate has a base and a retaining ring positioned beneath the base. The retaining ring includes a main portion with a first surface to apply a load to a perimeter portion of the back surface of the substrate and an annular projection with a second surface to retain the substrate. A bottom surface of the projection is separated from a top surface of a polishing pad by a gap.

Abstract: A semiconductor wafer processing apparatus, more specifically, an edge contact loadcup for locating a semiconductor workpiece or wafer into a chemical mechanical retaining ring utilizing a cone, wafer chuck and flexure. The cone aligns the wafer concentrically to the retaining ring. The wafer chuck, inside the cone, is restrained from moving laterally in respect to the cone by the flexure. The wafer, which is supported by the wafer chuck, is moved into the retaining ring by the wafer chuck after the cone has become aligned with the retaining ring. An adjustment mechanism is provided to ensure the co-planar orientation of the wafer and fixture. Other embodiments include a sensor for detecting the presence of the wafer on the chuck, and in the cone, and minimizes particulate contamination to the wafer.

Abstract: A long-lasting retaining ring for wafer carriers used in chemical mechanical planarization. A groove is disposed around the retaining ring, with the groove opening facing the mounting plate. A ridge is disposed in the groove. A bladder is disposed in the groove and is pressed between the ridge and the mounting plate. Pressure in the bladder can be maintained or adjusted to deform the bladder and thereby force the retaining ring onto the polishing pad as the retaining ring is worn. Prior to adding pressure to the bladder, the ridge forces the bladder to very closely conform to the dimensions of the groove. Thus, during use, bladder deformation is not wasted on conforming the bladder to the groove shape, but instead can be used to force the retaining ring further in the direction of the pad. The ridge thereby increases the distance the retaining ring can move towards the pad.

Abstract: The present invention relates to a polishing apparatus for restoring an optical disk. The objects of the present invention are as follows: to obtain an equal pressure appropriately required for polishing; to correct the accuracy of parallelism between the rotation planes of an optical disk and a polishing sheet; to remove roundness formed on the outer edge of an optical disk and unevenness in polishing; and to prevent clogging of the surface of a polishing sheet by the active elimination of abrasive filings and an occurrence of scratches on the surface of an optical disk due to the clogging. For the purpose of achieving the above objects, in an apparatus for polishing an optical disk composed of a disk rotator A and a polishing mechanism B, the polishing mechanism B has an elastic mechanism D for elastically holding a polishing pad C, a polishing sheet of the polishing pad C has such an elasticity that the deformation amount ?x is 0.005 mm to 0.

Abstract: A method for thinning (such as in grinding and polishing) a material surface using an instrument means for moving an article with a discontinuous surface with an abrasive material dispersed between the material surface and the discontinuous surface where the discontinuous surface of the moving article provides an efficient means for maintaining contact of the abrasive with the material surface. When used to dimple specimens for microscopy analysis, a wheel with a surface that has been modified to produce a uniform or random discontinuous surface significantly improves the speed of the dimpling process without loss of quality of finish.

Abstract: The wafer planarization apparatus comprises a processing part which holds a wafer through a protective sheet adhering to the obverse of the wafer and processes the reverse of the wafer, an inspecting device which inspects the wafer having been processed by the processing part, a frame adhering part which adheres a frame through a sheet to the reverse of the wafer having been inspected by the inspecting device, a peeling part which peels the protective sheet from the wafer to which the frame has been adhered, and a transporting device which transports the wafer between the processing part, the inspecting device, the frame adhering part, and the peeling part, so that the series of processing for the wafer can be systematized in line.

Abstract: An apparatus is provided for supporting semiconductor wafer in a wafer processing system. The apparatus comprises at least two wafer support assemblies, defining respectively at least two wafer support levels and being mounted between opposing support beams; one or more supporting bases connected to or integral with each of the wafer support assemblies; and a motion unit coupled to the support beams.

Abstract: A carrier head has a base, a flexible membrane, and a valve in the carrier head that forms part of a substrate detection system. The valve includes a valve stem that contacts an upper surface of the flexible membrane so that if a substrate is attached to the lower surface of the flexible membrane when the first chamber is evacuated, the valve is actuated to generate a signal to the substrate detection system.

Abstract: A carrier head for a chemical mechanical polishing apparatus. The carrier head includes a housing, a base, a loading mechanism, a gimbal mechanism, and a substrate backing assembly. The substrate backing assembly includes a support structure positioned below the base, a substantially horizontal, annular flexure connecting the support structure to the base, and a flexible membrane connected to the support structure. The flexible membrane has a mounting surface for a substrate, and extends beneath the base to define a chamber.

Abstract: One embodiment disclosed relates to a chemical-mechanical polishing process. The process includes performing chemical-mechanical polishing on an entire wafer lot without look ahead polishing of a first article wafer. A normalized polish rate is determined, and a process time for a next wafer lot is predicted using the normalized polish rate. Another embodiment of the invention relates to a polishing apparatus for chemical-mechanical planarization of semiconductor wafers.

Abstract: The apparatus and method for producing a substrate having a substrate surface by polishing the substrate surface, which includes a metallic wire. A polishing liquid is supplied a clearance between the substrate surface and the surface of a polishing pad. The polishing liquid includes an acid which dissolves the oxidized part of the substrate surface and is substantially free of solid abrasive powder. A relative movement is generated between the substrate surface and the polishing pad surface while the substrate surface is pressed against the polishing pad surface while the polishing liquid is supplied so that the dissolved oxidized part of the substrate surface can be removed from the substrate.

Abstract: An objective of the present invention is to provide a polishing pad for a semiconductor wafer and a laminated body for polishing of a semiconductor wafer equipped with the same which can perform optical endpoint detection without lowering the polishing performance as well as methods for polishing of a semiconductor wafer using them. The polishing pad of the invention comprises a water-insoluble matrix material such as crosslinked 1,2-polybutadiene, and a water-soluble particle such as ?-cyclodextrin dispersed in this water-insoluble matrix material, and has a light transmitting properties so that a polishing endpoint can be detected with a light.

Abstract: An object of the present invention is to provide a polishing pad for a semiconductor wafer which can perform a stable polishing while preventing a polishing layer from floating up from a supporting layer and a surface of a polishing pad from bending during polishing using a polishing pad having a multi-layered structure of a polishing layer and a supporting layer, and a polishing process using thereof. The polishing pad of the present invention is characterized in that it is comprising a supporting layer which is a non-porous elastic body and a polishing layer which is laminated on one surface of the supporting layer, and a polishing process using thereof. Shore D hardness of the polishing layer is preferably 35 or more, and hardness of the supporting layer is preferably lower than that of the polishing layer.

Abstract: The present invention provides a polishing pad for electrochemical mechanical polishing of conductive substrate. The pad comprises a plurality of grooves formed in a polishing surface of the polishing pad, the grooves being adapted to facilitate the flow of polishing fluid over the polishing pad. The conductive layers are respectively formed in the grooves and are in electrical communication with each other.

Abstract: A method of polishing a surface (120) of an article, e.g., a semiconductor wafer (112, 212), using a polishing layer (108, 208) in the presence of a polishing medium, such as a slurry (116). The method includes selecting the rotational rate of the article or the velocity of the polishing layer, or both, so as to control either removal rate uniformity or the occurrence of defects on the polished surface, or both.

Abstract: An apparatus for polishing a wafer includes a polishing station having a platen on which a polishing pad is installed, a polishing head having a membrane that contacts a surface of the wafer, the membrane securing the wafer and pressuring the wafer against the polishing pad, wherein the polishing station includes a transfer stage for loading the wafer on or unloading the wafer from the polishing head, and wherein the transfer stage includes a pedestal on which the wafer is placed and a fluid supply part for supplying a fluid into a boundary region between the wafer and the membrane to reduce a surface tension between the wafer and the membrane. Preferably, the apparatus further includes a stopper for preventing the wafer placed on the pedestal from being lifted up along with the membrane when the wafer is unloaded from the polishing head onto the pedestal.

Abstract: A device for polishing digital storage discs including a polishing plate rotatably driven about a vertical axis, the upper side of which has a polishing cloth, wherein the polishing cloth is interrupted by a ring-shaped recess concentric with the axis of the polishing plate, at least one circular load-applying plate from the planar lower side of which a projection centrally protrudes to appropriately engage the central hole of the storage disk, a roller holder which has at least one idling roller and one driven roller against which the circumference of said load-applying plate gets into engagement when said plate is carried along while lying on said polishing plate, a drive for said driven roller, and mechanism for feeding a polishing medium to said polishing cloth.

Abstract: A flat-object holder can hold a flat object-and-frame assembly, and the holder has the flat object fixed to the frame with protection tape. The flat-object holder includes at least a flat object supporting area for fixedly holding the flat object via the protection tape by applying a suction force, and a frame fixing area for fastening the frame. The flat-object holder bearing the flat object-and-frame assembly can be fixedly held by a selected chuck table by applying a negative pressure to the flat object supporting area. The flat-object holder can transfer and put the flat object-and-frame assembly in a container. Thus, no matter how thin the flat object may be, it can be handled without the fear of breaking.

Abstract: A chemical mechanical polishing apparatus has a substrate holder, a polishing belt, and a backing member positioned on a side of the polishing belt opposite the substrate holder. The polishing belt has a polishing surface to contact at least a portion of the substrate held by the substrate holder. The polishing belt is movable in a first direction in a generally linear path relative to the substrate. The polishing belt has a plurality of grooves formed therein.

Abstract: A linear chemical mechanical polishing apparatus that is equipped with a programmable pneumatic support platen and a method for controlling the polishing profile on a wafer surface during a linear CMP process are disclosed. The programmable pneumatic support platen is positioned juxtaposed to a bottom surface of a continuous belt for the linear CMP apparatus and positioned corresponding to a position of the wafer carrier so as to force the polishing pad against the wafer surface to be polished. The support platen has a predetermined thickness, a plurality of apertures through the thickness and a plurality of openings in a top surface in fluid communication with a gas source through the plurality of apertures.

Abstract: The invention concerns a polishing or lapping device comprising a surface whereon parts to be polished are to be applied, with an interposed abrasive suspension, and with a certain pressure. The invention is characterized in that said surface comprises a plurality of recessed parts (1, 16, 17) forming reservoirs for the abrasive suspension independent of one another and said recessed parts (1, 6, 17) are defined by partitions (2, 26, 27) whereof the top walls (20), co-operating with said abrasive suspension, form active zones for lapping or polishing, said partitions (2, 26, 27) having a substantially constant height over the whole surface of the device, before it is used. The invention is useful for polishing or lapping metal parts.

Abstract: A polishing apparatus includes a belt-type surface plate stretched between two rollers each having a rotation shaft arranged in parallel to that of the other roller, a plurality of sheet-type polishing pads stuck on the surface plate, and a dresser for activating the polishing pads. Part of an upper end portion of each of the polishing pads facing an adjacent one of the polishing pads has an obtuse angle. Thus, the dresser is not caught by the upper end portion of each of the polishing pads, so that the generation of a scratch in the polishing pads. Therefore, a semiconductor wafer can be polished without causing a scratch thereon.

Abstract: A retaining ring has an inner core of a first material and an outer layer of a second, different material that is deposited on the first material. The outer layer can be deposited by spraying, e.g., by powder coating, and can be a polymer, e.g., polyetheretherketone.