Abstract: A grinding machine includes at least a turntable, rotary chuck tables for holding workpieces to be machined, a first grinding device for grinding the workpiece held on the chuck table and a second grinding device for grinding the first-ground workpiece held on the chuck table. The first grinding device comprises at least a first grinding wheel having pieces of grindstone set so as to define together a first grinding plane, and a first spindle fixed to the first grinding wheel. Likewise, the second grinding device comprises a second grinding wheel having pieces of grindstone set so as to define together a second grinding plane and a second spindle fixed to the second grinding wheel.

Abstract: A wafer polisher, wherein a retainer ring (28) is installed in a wafer holding head (14), a protective sheet material (52) is disposed inside the retainer ring (28), and a wafer (W) is pressed against a polishing pad (20) through the protective sheet material (52) for polishing, whereby the protective sheet material (52) can be disposed without causing wrinkles on the inner peripheral part of the retainer ring (28).

Abstract: A wafer carrier structure for a chemical-mechanical polishing device. The wafer carrier structure includes a holder and a slurry supply pipeline. The slurry supply pipeline is attached to the side of the holder such that a portion of the supply pipeline near the outlet end is either parallel or perpendicular to the sidewall of the holder.

Abstract: A polishing apparatus is used for polishing a workpiece such as a semiconductor wafer to a flat mirror finish. The polishing apparatus comprises a turntable having a polishing surface, a top ring for holding a workpiece and pressing the workpiece against the polishing surface to polish the workpiece, at least three cleaning apparatuses for cleaning polished workpieces, and a transfer structure for transferring the polished workpieces between at least three cleaning apparatuses. The polishing apparatus further includes a rotary transporter disposed in a position which can be accessed by said top rings and having a plurality of portions positioned on a predetermined circumference from a center of rotation of the rotary transporter for holding the workpieces.

Abstract: A method for controlling a polishing characteristic of a polishing pad used in the planarization of a substrate is disclosed. The method includes controlling the temperature of a planarizing surface of the polishing pad so that waste matter accumulations on the planarizing surface are softened and/or be come soluble. The planarizing surface is heated by directing a flow of heated planarizing liquid or a heated gas onto the surface so that the material comprising the planarization surface attains approximately its glass transition temperature. Alternatively, the planarizing surface may be heated by heating a support surface beneath the polishing pad or by heating the air proximate to the polishing pad.

Abstract: A slurry supply system disposed above the rotating platen of a chemical mechanical polishing apparatus. The slurry supply system includes a wafer carrier configured to hold a semiconductor wafer to be polished; a supporting arm to support the wafer carrier; a slurry supplier connected to the supporting arm and located on the front edge of the rotating direction of the rotating platen so that the slurry supplier is positioned opposite the wafer carrier; and a plurality of openings formed on the slurry supplier to feed chemical mechanical polishing fluids, each of the openings individually supplied with individual control of the chemical mechanical polishing fluids.

Abstract: A lapping method of a magnetic head slider provided with an element-forming surface, an ABS and an MR element formed on the element-forming surface, including a step of setting the magnetic head slider to be lapped on a lapping means, and a step of lapping by the lapping means the ABS of the magnetic head slider with while keeping an angle between the element-forming surface of the magnetic head slider and a lapping direction in a range greater than 0 degrees and equal to or less than 30 degrees.

Abstract: An anti-scattering layer for polishing pad windows as used in chemical-mechanical planarization (CMP) systems is disclosed. The invention finds particular use in circumstances where the windows have a roughened lower surface. The anti-scattering layer is formed over the roughened lower surface of the window in a manner that significantly reduces light scattering while making optical in-situ measurements of a wafer undergoing a CMP process. The reduced light scattering results in an increased signal strength, which makes for more robust optical in-situ measurement capability.

Abstract: A method for processing semiconductor wafers, which provides planarized surface in a well controllable manner and with high accuracy by processing a film with uneven surface, formed over a semiconductor wafer, within the area of a working surface with a diameter larger than that of said semiconductor wafer by not more than two times, and by processing the film with a polishing liquid supplied from a supply unit disposed on a vertically arranged working surface is disclosed. Additionally, high quality dressing of the working surface can be easily performed by virtue of the smaller diameter of the working surface. Furthermore, the vertical arrangement of the working surface makes possible ready compatibility with semiconductor wafers of enlarged diameters.

Abstract: A wafer processing module is provided. In one example, the wafer processing module includes a sub-aperture CMP processing system and a pad exchange system including a pad magazine for storing CMP processing pads and a pad exchange robot for transferring CMP processing pads between the sub-aperture CMP processing system and the pad magazine. The wafer processing module includes a module frame that integrates the sub-aperture CMP processing system including the pad exchange system, with a wafer scrubber unit and a wafer SRD unit.

Abstract: The present invention provides exemplary methods, systems and apparatus that provide improved substrate characteristics after grinding operations by avoiding or reducing overgrind damage to the wafers. In one embodiment, a grinding apparatus (100) includes a first spindle (110) having an eccentric-shaped abrasive matrix (112) coupled thereto and a second spindle (116) adapted to hold a substrate (118) to be ground. The second spindle is offset from said first spindle such that the abrasive matrix passes through the substrate surface center (134) for only a portion of the time during grinding operations.

Abstract: A chemical-mechanical polishing apparatus is provided with a downstream device for conditioning a web-shaped polishing pad. The device may be used to condition a glazed portion of the pad, and then the conditioned pad portion may be used again for polishing. The conditioning device is preferably arranged to apply different conditioning treatments to different portions of the glazed pad. The conditioning device may have roller segments that rotate at different speeds. Alternatively, the device may have non-cylindrical rollers that provide different rotational speeds at the pad surface, or the device may apply different pressures at different portions of the pad. The device may be arranged to provide uniform conditioning across the width of the pad. The invention is applicable to methods of planarizing semiconductor wafers. The invention may be used to condition circular pads in addition to web-shaped pads.

Abstract: An invention is provided for removing a top wafer layer during a CMP process. Time series data is collected based on a reflected wavelength from a top layer of a wafer. A Fourier Transform is applied to the time series data, and a frequency of peak intensities in the Fourier Transform of the time series data is analyzed to determine a peak magnitude in the frequency. A first removal rate of the top layer is determined based on the peak magnitude in the frequency, and a current thickness of top layer is calculated based on the first removal rate. The CMP process is discontinued when the current thickness of the top layer is equal to or less than a target thickness, and a separate polishing process is performed to remove an additional portion of the top layer. In one aspect, the separate polishing process can be based on a soft endpoint detection process having second removal rate that is lower than the first removal rate.

Abstract: Chemical-mechanical planarizing machines and methods to maintain processing pads and other planarizing media used in planarizing microelectronic workpieces. In one embodiment, a planarizing machine can include a surfacing device attached to one of a carrier or a support member. The surfacing device is positioned to transmit a non-abrasive energy, such as ultrasonic waves, against the planarizing medium. The planarizing machine can include a controller that is operatively coupled to the surfacing device for activating the surfacing device at appropriate moments either before or during a planarizing cycle of a microelectronic workpiece. In another embodiment the controller can be a computer having a database containing instructions for causing the surfacing device to transmit the non-abrasive energy against the planarizing pad.

Abstract: A wafer carrier head assembly for holding a wafer in chemical mechanical planarization applications is dis;losed that includes a downwardly protruding wafer retaining ring that moves independent of the wafer carrier head and retains an edge of the wafer on said polishing surface. An adjustable wafer holding mechanism that applies one of a uniform downward force and a uniform upward force to the wafer is also included. Application of the upward force allows the wafer holding mechanism to retain and transport the wafer to a polishing surface. Application of the downward force allows the wafer holding mechanism to retain the wafer on the polishing surface and allows the wafer to be uniformly polished. The wafer carrier head assembly herein disclosed is also configured to pivotally accommodate changes in parallelism between the wafer and the polishing surface when the wafer is being polished.

Abstract: The present invention provides a deformable pad useful for chemical mechanical polishing (“CMP”), a CMP apparatus incorporating the deformable pad of the present invention, and methods for using the deformable pad and CMP apparatus of the present invention. The deformable pad of the present invention includes a plurality of solid supports which substantially eliminate the nonuniform polishing rates in known CMP processes and may be tailored to optimize a wide array of CMP processes. The CMP apparatus of the present invention incorporates a deformable pad of the present invention and may include several other known features, such as a polishing pad, a substrate carrier, mechanical assemblies for agitating the polishing pad or substrate carrier, etc.

Abstract: The problem of non-uniform polishing properties of a circumferential surface area of a substrate, so-called edge sagging phenomenon, is solved. When a thin film formed on a top surface of the substrate is polished while holding a back surface of the substrate, local stress at a circumferential end of the substrate is reduced by a guide installed so as to surround the substrate. Also, a deformation of the outer circumferential end portion of the substrate is reduced by a recessed groove provided on the guide. Since a thin film formed on the surface can be polished to be flat throughout the surface of the substrate without an occurrence of non-uniform polishing properties of the outer circumferential surface area of the substrate, so-called edge sagging phenomenon, a high-performance semiconductor device can be manufactured at a high yield and low costs.

Abstract: A carrier head has a base, a flexible membrane, and a valve in the carrier head that forms part of a substrate detection system. The valve includes a valve stem that contacts an upper surface of the flexible membrane so that if a substrate is attached to the lower surface of the flexible membrane when the first chamber is evacuated, the valve is actuated to generate a signal to the substrate detection system.

Abstract: The present invention is directed to an apparatus and method for flow regulation of planarization fluids to a semiconductor wafer planarization machine. In one embodiment, the regulating system includes a fluid storage tank with an acoustic fluid level sensor. The storage tank is connected to a fluid delivery line that delivers planarization fluid to the storage tank through a flow control valve and delivers a regulated flow of planarization fluid to a planarization machine through a flow sensor. A gas supply system is connected to the storage tank to provide system pressurization. Regulation of the fluid flow is achieved by a control system in which the flow sensor and the acoustic fluid level sensor comprise feedback elements in a closed feedback system to independently control the pressure in the storage tank and the fluid admitted by the control valve. In an alternate embodiment, the fluid level sensor is comprised of capacitive proximity sensors located outside the wall of the storage tank.

Abstract: In the wafer polishing apparatus for pressing a wafer against a polishing pad with an air bag, which is provided to a carrier, pressing area regulating members are attached to the bottom face of the carrier, whereby areas for pressing the wafer with the air bag are regulated. The pressing area regulating members are prepared in order to regulate different areas to be pressed. The areas for pressing the wafer with the air bag can be changed by replacing the pressing area regulating members when suitable.

Abstract: The invention is a slurry distribution system for controlling the distribution of slurry across a top surface of a polishing pad. The polishing pad may be supported by a platen and be part of a polishing station in a chemical mechanical polishing tool. Two juxtaposed perforated manifolds below the polishing pads are used as the primary means of controlling the distribution of slurry. A motor is used to rotate at least one of the perforated manifolds until a desired pattern of aligned perforations below the polishing pad has been achieved. By initially creating the perforations in each manifold in a particular pattern, many different patterns of aligned perforations may be obtained. Patterns may advantageously be made possible that have concentrations of aligned perforations in the center, middle and/or periphery of the manifolds. The polishing pad will have a slurry distribution corresponding to the concentration of aligned perforations in the manifolds.

Abstract: A method and apparatus for planarizing a microelectronic substrate. The apparatus can include a planarizing medium having a relatively hard polishing pad and a planarizing liquid disposed on a generally non-porous planarizing surface of the polishing pad. The planarizing liquid can include a colloidal suspension of colloidal particles having generally smooth external surfaces. The colloidal particles can have a variety of shapes, including a spherical shape, a cylindrical shape, a cubic shape, and a hexagonal shape, among others. The colloidal particles can be formed from a variety of materials, including silicon dioxide, manganese oxide, and cerium oxide.

Abstract: An apparatus, as well as a method, determines an endpoint of chemical mechanical polishing a metal layer on a substrate. The method of the apparatus includes bringing a surface of a substrate into contact with a polishing pad that has a window; causing relative motion between the substrate and the polishing pad; directing a light beam through the window, the motion of the polishing pad relative to the substrate causing the light beam to move in a path across the substrate; detecting light beam reflections from the substrate and a retaining ring; generating reflection data associated with the light beam reflections; dividing the reflection data into a plurality of radial ranges; and identifying the predetermined pattern from the reflection data in the plurality of radial ranges to establish the endpoint.

Abstract: A grinding device includes a rotary grinding wheel having an annular grinding surface, a first grinding seat located in front of the grinding wheel, a sleeve disposed rotatably within a through hole in the first grinding seat, an abrasion measuring device for measuring amount of flank portions of a drill bit to be ground, and a tubular holding unit for holding releaseably the drill bit therein. The holding unit is sleeved on the drill bit, is disposed initially in the abrasion measuring device so as to fix position of the drill bit within the holding unit, and is then transferred into the first grinding seat for grinding the flank portions of the drill bit.

Abstract: Planarizing machines, carrier heads for planarizing machines and methods for planarizing microelectronic-device substrate assemblies in mechanical or chemical-mechanical planarizing processes. In one embodiment of the invention, a carrier head includes a backing plate, a bladder attached to the backing plate, and a retaining ring extending around the backing plate. The backing plate has a perimeter edge, a first surface, and a second surface opposite the first surface. The second surface of the backing plate can have a perimeter region extending inwardly from the perimeter edge and an interior region extending inwardly from the perimeter region. The perimeter region, for example, can have a curved section extending inwardly from the perimeter edge of the backing plate or from a flat rim at the perimeter edge. The curved section can curve toward and/or away from the first surface to influence the edge pressure exerted against the substrate assembly during planarization.

Abstract: A semiconductor wafer is cleaned while a sponge or brush is pressed against the wafer with a constant forced applied utilizing a bias in a constant force pencil. The wafer is cleaned in the state wherein a collapsing portion of the constant force pencil with respect to the cleaning sponge cloth is set in such a way that the cleaning pressure, which is applied from the cleaning sponge to the wafer, can be constant and is adjustable. A method for cleaning wafers using a constant force pencil is also described.

Abstract: A polishing pad conditioning apparatus in a chemical mechanical polishing apparatus, wherein the conditioning apparatus includes a conditioning plate which maintains a predetermined relative velocity with respect to the polishing pad, extends from a center region near a rotation center of the polishing pad to a peripheral region near an edge of the polishing pad, and has a polishing portion with polishing particles embedded into its bottom surface, a force generating portion for applying a force to the conditioning plate so that the conditioning plate presses against the polishing pad with pressure that varies according to position on the polishing pad, and conditions the polishing pad by relative linear velocity and pressure with respect to the polishing pad, and a supporting portion for supporting the force generating portion. Therefore, fast and uniform conditioning of a polishing pad can be achieved.

Abstract: The present invention aims at make automatic real-time measurement of the removal rate in during polishing. For achieving the aim, a polishing system is provided with a sensor 1 for measuring a friction generated between a polishing pad and a workpiece during the polishing. The information processor of the polishing system evaluates the polishing efficiency of the polishing pad 5 on the basis of a fluctuation in the removal rate which is successively obtained from a friction successively detected by the sensor and a predetermined function. The result of the evaluation is used for the determination of the execution timing of a dressing process for the polishing pad, the calculation of the removal from the workpiece, and the like.

Abstract: A controlled pressure regulation system generates the wafer-pressing pressures during a polishing operation. A wafer carrier head holds a wafer to be polished against a platen. A first and second pressure regulators respectively generate a first and second pressure onto the platen and the wafer carrier head to press the wafer to be polished. A first and second controllers are respectively connected to the first and second pressure regulators in control feedback loops to control the generation of the first and second pressures. The first and second pressures are controlled to obtain a desired difference of pressure between the first and second pressure.

Abstract: The present invention provides a polishing head, for use with a polishing apparatus. In one embodiment, the polishing head includes a carrier head assembly, and a retaining ring having a surface positionable adjacent a polishing pad and couplable to the carrier head assembly and configured to retain a semiconductor wafer therein, the retaining ring having a slurry conduit located therethrough to provide a flow of slurry to the polishing pad.

Abstract: A step part is formed on a face of a retainer ring that contacts with a polishing pad so that a wavily deformed part of the polishing pad enters the step part. The step part is formed like a ring at the inside of the face which actually contacts with the polishing pad. Moreover, a height of the step part is smaller than a thickness of a wafer so that a top face of the step part does not contact with the polishing pad and the wafer does not enter the step part. Further, a width of the step part is set so that the wavily deformed part of the polishing pad can enter the step part.

Abstract: An method and apparatus for forming wafers of varying thickness'. The apparatus includes a template. The template is formed of a main disk including a plurality of cavities extending into a first side thereof. Each cavity has notches cut in the walls thereof and a pattern etched in the base thereof. Holding disks are moistened and positioned within respective cavities for releasably securing a wafer in the cavity. A moistening liquid is dispensed and diffuses into the cavities via the notches cut in the walls and collects in the pattern etched on the base of the cavity thereby increasing the suctional force used to secure the holding disk. When the template is releasably secured within a cavity, rotatably connected to a rotating head and positioned such that the first side faces a lapping and polishing surface, wafers received by the cavities are lapped and polished upon rotation of the rotating head.

Abstract: A carrier head is provided that improves the pressure uniformity of a semiconductor wafer against the polishing pad in chemical mechanical polishing (CMP). The carrier head includes a carrier, a carrier film, and a guide ring. The objective of CMP is to provide planarization of the surface of a semiconductor wafer by uniformly removing material. One embodiment of the invention uses independent adjusting screws threaded in the carrier to provide uniform wafer pressure and lengthen guide ring life. The adjusting screws are threaded internally to accept holding screws attached to the guide ring using a backing. This facilitates variation in the spacing between the carrier and guide ring at each adjusting screw. A locking nut on each adjusting screw is used to maintain each gap setting. This embodiment eliminates the need for shims and the associated trial-and-error set-up time in selecting shims. In addition, compensating for guide ring wear can be easily performed without disassembling the carrier head.

Abstract: Generally, a method and apparatus for retaining a substrate is provided. In one embodiment, a carrier for retaining a substrate comprises a carrier plate having a lower surface, at least one first fluid outlet and a second fluid outlet. The first fluid outlet is fluidly coupled to the lower surface of the carrier plate. The second fluid outlet is fluidly coupled to the lower surface of the carrier plate. A first fluid circuit is coupled to the first fluid outlet and is adapted to flow a fluid forms a fluidic layer between the carrier plate and the substrate. A second fluid circuit is coupled to the second fluid outlet and is separate from the first fluid circuit.

Abstract: New, versatile finishing surfaces are described. Unitary finishing elements having discrete finishing members attached to unitary resilient body are disclosed for finishing microdevices such as semiconductor wafers. Finishing surfaces such as discrete finishing members can be comprised of a multiphase polymeric composition. The new unitary finishing elements have lower cost to manufacture and high precision. The unitary finishing elements and finishing surfaces can reduce unwanted surface defect creation on the semiconductor wafers during finishing.

Abstract: An apparatus (100) and method are provided for polishing a substrate (105) that achieves a high-planarization uniformity. In one embodiment, the apparatus (100) includes a subcarrier (165) with a lower surface (170), a flexible member (245) extending across the lower surface, and a control-insert (280) disposed between the flexible member and the lower surface. The flexible member (245) has a surface adapted to press the substrate against a polishing pad. The control-insert (280) inhibits non-planar polishing by providing a variable removal rate across the substrate surface. The control-insert (245) can be an annular ring (280A) located near an outer edge of the flexible member (245) to control the removal rate near an edge of the substrate (105), or a disk (280B) near a center (290) of the flexible member to control the removal rate near a center of the substrate. The removal rate can be further controlled by varying a cross-sectional thickness of the control-insert (245).

Abstract: A polishing bar is provided with a plurality of backings that are carried via blocks of impact absorbent material on a bar of greater stiffness. Each backing is shaped with two surfaces at an angle to each other. A polishing tape is disposed over the angled surfaces of each backing. The portion of the polishing tape over the forward surface of the backing is employed to polish the angled edge of the top wafer of a rotating bonded wafer pair.

Abstract: An optical window structure is disclosed. The optical window structure includes a support layer that has a reinforcement layer and a cushioning layer. In addition, the optical windows structure has a polishing pad which is attached to a top surface of the support layer. Furthermore, the optical window structure has an optical window opening and a shaped optical window. The shaped optical window at least partially protrudes into the optical window opening in the support layer and the polishing pad during operation.

Abstract: The present invention has an object to provide a retention plate used in a polishing device that mirror polishes semiconductor substrates such as silicon wafers, particularly a retention plate used with the hard chuck method, that can prevent roll-off, and can achieve a high improvement in flatness. According to the present invention, by means of using a retention plate of a constitution that is of a smaller diameter than that of the wafer and which gives a region in which the area of contact with the wafer is reduced by means of groove processing, or a porous structure and the like, on the outer peripheral part, a reduction of the processing pressure of the outer peripheral part becomes possible, and, because the polishing of the region in which roll-off occurs is delayed, the amount removed by polishing becomes uniform over the wafer surface, and high precision wafer processing becomes possible.

Abstract: Disclosed is a polishing apparatus that comprises a polishing tool, a substrate holding member, a measuring device to measure a drive current of a drive unit while the drive unit drives at least one of the polishing tool and the substrate holding member, and a failure detection unit to detect either jumping of the substrate from the substrate member or breakage of the substrate. While a substrate is held by a substrate holding member and pressed against the polishing tool during a polishing operation, the failure detection unit will detect jumping of the substrate from the substrate holding member or breakage of the substrate based on a comparison of the value of the drive current with a threshold value, or a comparison of a waveform pattern of the drive current with a predetermined waveform pattern.

Abstract: A method for cleaning a polishing tool capable of reliably removing deposited solidified abrasive and impurities and thereby capable of suppressing scratching of a polished object and reducing residual particles on the polished face of the polished object, comprising the steps of arranging with respect to the polishing tool a cleaning member provided with facing surfaces for forming clearances with cleaned surfaces of the polishing tool feeding a cleaning solution to clearances formed between the facing surfaces and the cleaned surfaces to form cleaning solution films, and cleaning the cleaned surfaces by rotating the polishing tool, the cleaning solution being fed to clearances between the cleaned surfaces and the facing surfaces through feed ports formed in the cleaning member and opened in the facing surfaces, and a polishing method and polishing apparatus using the same.

Abstract: The present invention is a polishing pad conditioning head for a CMP and similar types of apparatus that is especially useful in conditioning the surface of fixed-abrasive CMP polishing pads to maintain optimal process conditions for the planarization process on dielectric and metal films on semiconductor wafers, as well as wafers and disks used in computer hard disk drives. The polishing pad conditioning head comprises a substrate and a layer of fine-grain chemical vapor deposited polycrystalline diamond that is bonded onto the substrate. Alternatively, a thin sheet of polycrystalline diamond may be deposited on a preferred growth substrate by a chemical vapor deposition process, then removed from the growth substrate and then bonded to the CMP conditioning disk substrate.

Abstract: Embodiments of the present invention provide a chemical-mechanical planarization method for planarizing a wafer. The method comprises polishing a surface of the wafer to be planarized, and optically measuring feature heights of features on the surface of the wafer to obtain measurement data during said polishing of the surface. In some embodiments, the feature heights are measured by directing incident light at the surface of the wafer and observing a reflected light intensity of light reflected from the surface. In specific embodiments, the method includes adjusting, in real time, parameters controlling said polishing of the surface in response to the measurement data. The parameters may include a spinning speed of the polishing pad used to polish the surface, an orbiting speed of the polishing pad, a rotational speed of the wafer, a position of the polishing pad, a force between the polishing pad and the object, or the like.

Abstract: Embodiments of the present invention are directed to a carrier head for positioning a substrate on a polishing surface. The carrier head includes a housing connectable to a drive shaft to rotate therewith; a base; a detachable plate removably mounted on top of the housing; a gimbal mechanism connecting the housing to the base to permit the base to move with respect to the housing such that the base remains substantially parallel to the polishing surface; and a flexible membrane defining a mounting surface for the substrate.

Abstract: A method and apparatus for planarizing a microelectronic substrate. In one embodiment, one surface of the microelectronic substrate is engaged with a planarizing pad and the opposite surface of the microelectronic substrate is positioned proximate to a substrate support. A bearing liquid, such as a planarizing liquid, is directed toward the second surface of the microelectronic substrate to form a liquid bearing between the substrate and substrate support. The microelectronic substrate can precess relative the substrate support as the substrate support moves relative to the planarizing pad. The substrate support can include a sensor to determine a characteristic, such as a thickness, of the liquid bearing. In another embodiment, a portion of the liquid bearing can be removed from the second surface of the microelectronic substrate to control the thickness of the liquid bearing and/or to remove particulate matter from the liquid bearing.

Abstract: A method is provided for controlling a wafer polishing process. The method includes determining a polishing characteristic for a particular type of device from a set of measurements obtained from a wafer having a device of the particular type, and updating the polishing characteristic in response to polishing and measuring a wafer having a device of the particular type. The method further includes determining the polish rate of a polisher using a set of measurements obtained from a wafer polished on the polisher; and updating the polish rate of the polisher in response to polishing a wafer on the polisher and measuring the wafer. The method also includes determining a desired polishing time on the polisher for a wafer having a device of the particular type using the updated polishing characteristic of the device and the updated polish rate of the polisher.

Abstract: A method and apparatus for measuring wear of the thickness of a chemical mechanical polishing pad are provided. The apparatus includes a chemical mechanical polishing pad having a plurality of reliefs in a main polishing surface for determining wear of the pad. In one aspect, the pad reliefs comprise through-holes in the pad or extend partially through a thickness of the pad. The method for measuring wear of the thickness of a chemical mechanical polishing pad includes providing a plurality of reliefs in a main polishing surface of the pad and measuring a distance from the main polishing surface to a bottom surface of each of a plurality of the reliefs.

Abstract: An asymmetric double-sided substrate scrubber is provided. The asymmetric double-sided substrate scrubber includes a first roller and a second roller. The first roller is constructed from a first material having a first density and the second roller is constructed from a second material having a second density. The second density is designed to be greater than the first density. The first roller is designed to be applied onto a first side of a substrate with a first force and the second roller is designed to be applied onto a second side of the substrate with a second force. The second force is configured to be substantially equivalent to the first force.

Abstract: The invention provides a polishing system comprising (a) a liquid carrier, (b) an alkali metal ion, (c) a compound comprising an amine group and at least one polar moiety, wherein the polar moiety contains at least one oxygen atom, and (d) a polishing pad and/or an abrasive, wherein the total ion concentration of the system is above the critical coagulation concentration. The invention also provides a method of planarizing or polishing a composite substrate comprising contacting the substrate with a the aforementioned polishing system or a polishing system comprising (a) a liquid carrier, (b) an alkali metal ion, (c) a compound comprising an amine group and at least one polar moiety, wherein the polar moiety contains at least one oxygen atom, and (d) a polishing pad and/or an abrasive, and polishing at least a portion of the substrate therewith in about 6 hours or less after the polishing system is prepared.

Abstract: A work piece carrier head can carry a semiconductor wafer during both plating and polishing operations. The carrier head includes a first component secured to a shaft by which the carrier head can be rotated, translated, and moved up and down, a second component connected to the first component and movable by fluid pressure relative to the first component between retracted and extended positions, and a third component connected to the first and second components for up and down movement between wafer loading or unloading and wafer plating or polishing positions. The third carrier head component includes a contact element by which electrical contact with the wafer is provided to permit wafer plating.