Abstract: A method and apparatus for planarizing a microelectronic substrate. The apparatus can include a planarizing medium having a relatively hard polishing pad and a planarizing liquid disposed on a generally non-porous planarizing surface of the polishing pad. The planarizing liquid can include a colloidal suspension of colloidal particles having generally smooth external surfaces. The colloidal particles can have a variety of shapes, including a spherical shape, a cylindrical shape, a cubic shape, and a hexagonal shape, among others. The colloidal particles can be formed from a variety of materials, including silicon dioxide, manganese oxide, and cerium oxide.

Abstract: An apparatus and method is disclosed; both of which use electrochemistry to selectively grow and remove hard oxide coatings on metals, and capacitive double layers on non-metals and semiconductors in order to predict and control the rate of surface abrasion during planarization of the surface of such materials.

Abstract: A system and method for controlling a polishing tool having multiple arms is provided. In accordance with one embodiment, a first removal rate for each arm based on a first wafer run is determined. A downforce adjustment input for each arm is then determined based on a process model, for the arms, which relates a removal rate for a given arm to downforce adjustments on each of the arms and using each first removal rate. The downforce adjustment input for each arm is provided to the polishing tool for polishing a subsequent run. In this manner, the method takes into account each arms removal rate dependency on the downforce adjustments for all of the arms. This can provide reduced removal rate variations between arms as well as between wafer lots and improve the characteristics of the ultimately formed semiconductor devices.

Abstract: The present invention advantageously provides a method for using an abrasive surface and a particle-free liquid to polish a dielectric, wherein the dielectric is deposited within an isolation trench and across a polish stop surface such that a recess region of the dielectric is spaced below the polish stop surface. In an embodiment, the dielectric is an isolation oxide, and the polish stop surface belongs to an upper surface of a nitride layer formed above a silicon-based substrate. The surface of the dielectric is positioned laterally adjacent the abrasive polishing surface such that the particle-free liquid is positioned at the interface between the dielectric and the polishing surface. The particle-free liquid is preferably deionized water, and the abrasive polishing surface is preferably a polymeric matrix entrained with particles composed of, e.g., ceria.

Abstract: A system for chemical-mechanical polishing is described which includes a wafer backing film having concentric first and second portions, and a wafer carrier having corresponding first and second portions for mounting the portions of the wafer backing film thereon. The portions of the wafer backing film are of different materials. The second portion of the wafer backing film has an annular shape and surrounds the first portion; the second portion of the wafer carrier is adjustable with respect to the first portion of the wafer carrier in a vertical direction. The second portion of the wafer backing film is less compressible than the first portion, and is adjusted in the vertical direction so that the outer edge of the wafer is substantially sealed when backside air is applied to the wafer during a film removal process.

Abstract: A wafer polishing apparatus has a rotary polishing bed, an abrasive cloth provided on the polishing bed, an abrasive supply supplying abrasives to a surface of the abrasive cloth, a wafer depressor depressing the wafer onto the abrasive cloth at a predetermined pressure, a ring shaped retainer arranged surrounding the wafer and provided with a plurality of grooves extending between an inner peripheral edge and an outer peripheral edge on a surface contacting with the abrasive cloth, a rotary driver driving the wafer and the retainer on the abrasive cloth, and a rotation speed difference generator providing a difference of rotation speeds between the wafer and the retainer.

Abstract: A polishing apparatus for semiconductor wafers includes an index table with multiple wafer positions, with different surface treatment arrangements for each position. With each index motion of the table, the table is sequentially loaded and unloaded while wafers carried at the remaining stations of the index table are moved for a subsequent surface treatment step. Progress of the surface treatment at each position is monitored and, optionally, subsequent surface treatment steps may be modified to achieve a desired final condition of the substrate being processed.

Abstract: A carrier head for a chemical mechanical polishing apparatus includes a base, a flexible membrane extending beneath the base to provide a mounting surface for a substrate, and a retaining ring surrounding the mounting surface. An edge portion of the flexible membrane extends around an outer surface of a support structure. An outer surface of the support structure is tapered to reduce binding between the flexible membrane and the retaining ring. Alternately, there may be a relatively wide gap between the support structure and the retaining ring, or a sidewall portion of the flexible membrane may be reinforced.

Abstract: Apparatus for selectively polishing an elevated area of the surface of a semiconductor wafer. The apparatus makes a topographical map of the surface of a semiconductor wafer to identify a high area on the surface; positions polishing apparatus over and in contact with the elevated area; and, moves the polishing apparatus and/or the wafer to polish selectively only the elevated area of the wafer surface.

Abstract: A chemical mechanical polishing apparatus includes a rotating plate on which a substrate is received, and a polishing pad which moves across the substrate as it rotates on the plate to polish the substrate. The load of the pad against the substrate, and the rotary speed of the plate, may be varied to control the rate of material removed by the pad.

Abstract: A method for optimizing CMP (chemical mechanical polishing) processing of semiconductor wafers on a CMP machine. The optimization method includes the steps of polishing a test series of semiconductor wafers on a CMP machine. During the CMP processing, a film thickness is measured at a first point proximate to the center of each respective wafer using a film thickness detector coupled to the machine. A film thickness at a second point proximate to the outside edge of the respective wafers is also measured. Based upon the in-process film thickness measurements at the first point and the second points, the optimization process determines a polishing profile describing a removal rate and a removal uniformity with respect to a set of process variables. The process variables include different CMP machine settings for the polishing process, such as the amount of down force applied to the wafer. The polishing profile is subsequently used to polish production wafers accordingly.

Abstract: Double or multiple unit polishing heads are used thereby negating the negative effects that irregularities in the surface of the polishing pad have on the polishing results obtained. Adjacent double or multiple unit polishing heads rotate in opposite directions thereby eliminating the effects of microscopic directions in the surface of the polishing pads.

Abstract: A work W is rotated on a lower grinding wheel 13 provided on a work support base 11. Both surfaces of the work W are simultaneously subjected to grinding process by an upper grinding wheel 24 provided on a grinding shaft 22 of a grinding head 21 and the lower grinding wheel 13. The work W is applied with a pressure force of a primary load through the grinding shaft 22 by a piston rod 36 of a primary pneumatic cylinder 35 which is operated by a first air pressure. The work W is also applied with a pressure force of a secondary load through a lever member 43 by a piston rod 46 of the secondary pneumatic cylinder 45 which is operated by a second air pressure higher than the first air pressure. By adjusting the second air pressure, the pressure force is controlled.

Abstract: Microelectronic substrate polishing systems and methods of polishing microelectronic substrates are described. In one embodiment, a substrate carrier includes a resilient member and a vacuum mechanism. The vacuum mechanism is coupled to the substrate carrier and configured to develop pressure sufficient to draw a portion of the resilient member toward the substrate carrier. The drawing of the resilient member effects an engagement between the resilient member and a substrate which is received by the substrate carrier. A polishing fluid sensor is provided and coupled intermediate the resilient member and the vacuum mechanism. In another embodiment, the polishing fluid sensor is coupled intermediate the substrate carrier and the vacuum mechanism. In another embodiment, the vacuum mechanism comprises a vacuum conduit through which a vacuum is developed. The polishing fluid sensor can be mounted on or in the vacuum conduit.

Abstract: A chemical mechanical polishing apparatus includes a plurality of concentric rotatable platens for polishing a substrate. A polishing pad is attached to each platen. Each platen may be rotated independently in either clockwise or counter-clockwise direction.

Abstract: A polishing method and apparatus for a semiconductor wafer includes a loading section having a loading platform for mounting a loading cassette, and a loading robot arm for transferring a wafer from the loading cassette. The apparatus includes a standby stage having a pre-polishing stand on which the wafer is placed, and a post-polishing stand for holding the wafer after polishing, and a polishing table on which a polishing process is performed. A wafer moving device transfers the wafer from the pre-polishing stand to the polishing table and back to the post-polishing stand. An unloading section includes an unloading platform for mounting an unloading cassette, and an unloading robot arm for transferring the wafer to the unloading cassette. A measurement device, proximal to the unloading stage, analyzes a polishing state of the wafer and then a cleaning device cleans the wafer after the wafers are analyzed.

Abstract: A clamping wafer holder for chemical - mechanical planarization ("CMP") machines is provided. It comprises a plate having a surface for receiving on it the wafer, and a retainer around the surface. The retainer includes at least two jaws shaped and arranged such that they define a recess with the surface. The wafer is placed in the recess. An actuator is coupled with the retainer and adjusts it from an open position where the jaws are separated from each other, to a closed position where the jaws clamp an edge portion of the wafer. When the retainer is in the closed position the jaws preferably contact each other and define a continuous cylindrical inner surface. The surface can have a stopper that engages a flat zone of a wafer. Where the shape of the jaws does not match exactly the periphery of the wafer, elastic inserts are mounted on the jaws. A vacuum source is coupled with the plate, to hold the wafer in the holder during reorientation. The actuator is advantageously operated by the vacuum source.

Abstract: Vibrating and oscillating rates can be dynamically changed during polishing to achieve an optimal polishing process. A semiconductor device substrate (34) has a first layer with a first film (12) and a second film (10) that overlies the first film (12), where the first film (12) is harder and underlies the second film (10). In one embodiment, the substrate (34) is placed over a first region (66) of a polishing pad (60). The second film (10) is polished at a first vibrating and oscillating rates over the first region (66). An endpoint signal is received when the first film (12) is reached. The substrate (34) is moved to a second region (62) of the polishing pad (60) that is closer to the edge of the pad and has a higher feature density compared to the first region (66). Polishing is performed at a second vibrating and oscillating rates that are different from the first vibrating and oscillating rates to remove the first film (10).

Abstract: A carrier head for chemical mechanical polishing with a retaining ring having an inclined inner surface. The force of the edge of the substrate against the inclined surface causes a reactive force having a vertical component on the edge of the substrate. This vertical force can reduce the edge effect.

Abstract: A wafer carrier includes a porous media layer through which a pressurized fluid is injected. The porous media layer introduces lateral dispersion into the pressurized flow, thereby assuring a uniform pressure at the exit surface of the porous media layer, as when the porous media layer is located adjacent the wafer being polished. Alternatively, an inflatable bladder may be introduced between the porous media layer and the wafer, again with pressure being maintained uniform by the porous media layer.

Abstract: A polishing apparatus 70 is used for polishing a workpiece such as a semiconductor wafer to a flat mirror finish by a combination of chemical polishing and mechanical polishing. The polishing apparatus includes a turntable 73 with a polishing 74 cloth mounted on an upper surface thereof, a top ring 75 for supporting the workpiece to be polished and pressing the workpiece against the polishing cloth, and a dressing tool 79 for dressing the polishing cloth on the turntable. The polishing apparatus further includes a cover 10 which covers an upper surface of the turntable for preventing liquid on the turntable from being scattered, and inserting holes 17 and 21 formed in an upper wall of the cover for inserting the top ring and the dressing tool therethrough.

Abstract: Disclosed is a polishing system used for polishing a surface to be polished of an object to be polished by a polishing pad, which is capable of improving uniformity of the surface to be polished of the object to be polished by positively, accurately adjusting a polishing pressure, and a polishing method using the polishing system. Concretely, the surface to be polished of a wafer as the object to be polished is polished by relatively moving, along a plane, a polishing surface of the rotating polishing pad and the surface to be polished of the wafer in slide-contact with each other, and adjusting a pressing force applied from the polishing pad to the wafer in accordance with a polishing pressure previously set depending on a relative-positional relationship between the polishing surface of the polishing pad and the surface to be polished of the wafer.

Abstract: The present invention provides a method and apparatus for delivering one or more rinse agents to a surface, such as a polishing pad surface and preferably one or more polishing fluids. The invention also provides a method of cleaning one or more surfaces, such as a polishing pad surface and a substrate surface, by delivering a spray of one or more rinse agents to the surface and, preferably, causing the rinse agent to flow across the surface from a central region to an outer region where unwanted debris and material is collected.

Abstract: The invention involves technology related to chemical mechanical polishing using a chemical mechanical polishing apparatus having a wafer carrier for holding a semiconductor wafer, a polishing platen which is able to be rotated and which is positioned facing the surface of the wafer carrier on which the wafer is held, and a circular polishing cloth mounted on the polishing platen for polishing the semiconductor wafer, the polishing cloth having a smaller diameter than the diameter of the semiconductor wafer, and the polishing platen being movable horizontally across the surface of the semiconductor wafer. While rotating the semiconductor wafer held on the wafer carrier, the polishing platen is moved horizontally across the surface of the semiconductor wafer so that the displacement velocity of the polishing platen is slower at a central portion of the semiconductor wafer than at an outer portion, and the surface of the semiconductor wafer is polished with the polishing cloth.

Abstract: A semiconductor wafer fabrication apparatus includes a carrier head for holding a wafer and distributing a downward pressure across a back surface of the wafer. The apparatus also includes a wafer processing station disposed near the carrier head. The station includes a grinding wheel and a flat fluid bearing. The fluid bearing provides an upward pressure against a front surface of the wafer to substantially flatten the front surface of the wafer and conform it to the flatness of the bearing surface. The face of the wafer can move with very little friction across the bearing surface. The grinding wheel can be raised into contact with the front surface of the wafer and rotated to grind the front surface while the fluid bearing provides the upward pressure and the carrier head distributes the downward pressure. The technique can be used to planarize a wafer having one or more previously-formed layers despite variations in thickness of the wafer or warpage of the wafer.

Abstract: An apparatus and associated methods for polishing semiconductor wafers and other workpieces that includes a polishing surfaces, such as pads mounted on respective platens, located at multiple polishing stations. Multiple wafer heads, preferably at least one greater in number than the number of polishing stations, can be loaded with individual wafers. The wafer heads are suspended from a rotatable support, which provides circumferential positioning of the heads relative to the polishing surfaces, and the wafer heads move linearly with respect to the polishing surface, for example oscillate radially within the rotatable support. A load/unload station may be located at a position symmetric with the polishing surfaces. The rotatable support can simultaneously position one of the heads over the load/unload station while the remaining heads are located over polishing stations for wafer polishing so that loading and unloading of wafers can be performed concurrently with wafer polishing.

Abstract: In a polishing machine so configured that a surface to be polished of a wafer is brought into a sliding contact with a polishing pad spread over a rotating surface plate, while supplying a polishing liquid onto the polishing pad, for the purpose of polishing the surface to be polished of the wafer, the polishing pad includes a lower polishing web formed of a relatively soft material and spread on a surface of the rotating surface plate, and an upper polishing web formed of a relatively hard material and larger than the lower polishing web. The upper polishing web is laid on the lower polishing web with a double-adhesive-coated waterproof tape being interposed between the upper polishing web and the lower polishing web, so that a peripheral portion of the upper polishing web is bonded to a peripheral portion of the rotating surface plate with only the waterproof tape being interposed between the rotating surface plate and the peripheral portion of the upper polishing web.

Abstract: A polishing method characterized by measuring the thickness of a film of a monitoring piece to be polished which is to be used exclusively for monitoring polishing amount, and obtaining polishing amount on the basis of the results of measurement, and judging, on the basis of the resulting polishing amount, setting/change of polishing condition of a polishing object, whether it is necessary or not to replace a polishing pad, and/or completion of run-in polishing after replacement of the polishing pad, and an apparatus to be used for practicing same.

Abstract: A polishing apparatus includes a polishing layer formed of forming resin and having a plurality of mechanical polishing particles contained in the polishing layer so as to be partially exposed from a polishing surface thereof. An object to be polished and the polishing layer are rotated relative to each other so that the object is polished with the mechanical polishing particles, in a state in which the object is allowed to contact with the polishing surface of the polishing layer.

Abstract: Lapping or polishing at high speeds with fine abrasive particles offer significant advantages in the speed of lapping, savings of time in lapping, and smoothness in the finished articles.

Abstract: A system for polishing a semiconductor wafer, the system comprising a wafer polishing assembly for polishing a face of a semiconductor wafer at a polishing rate and a polishing uniformity, the wafer polishing assembly including a platen subassembly defining a polishing area, and a polishing head selectively supporting a semiconductor wafer and holding a face of the semiconductor wafer in contact with the platen subassembly to polish the wafer face; and a controller selectively adjusting one of a plurality of adjustable polishing parameters during polishing of the wafer.

Abstract: A low profile gimbal system is provided to greatly reduce the generation of moments about a pivot point of the gimbal system during polishing processes. The gimbal system is adjustable so that a preferred balance between stiffness and friction may be selected as appropriate for a variety of different polishing conditions. A locking feature ensures that the adjustment setting is maintained during polishing.

Abstract: A retaining ring is configured for use with an apparatus for polishing a substrate. The substrate has upper and lower faces and a perimeter. The apparatus has a movable polishing pad with an upper polishing surface for contacting and polishing the lower face of the substrate. The retaining ring has a retaining face for engaging and retaining the substrate against lateral movement and a bottom face for contacting the polishing surface of the polishing pad. The bottom face of the retaining ring extends downward from an inner portion adjacent the retaining face to a lowermost portion radially outboard of the retaining face.

Abstract: A chemical-mechanical polishing station comprises a polishing table that has concentric rings. The rings are separated from each other by a small gap and all rings are capable of rotating in the same prescribed direction. A polishing pad is mounted on top of each ring, and a delivery tube is positioned at a distance above the polishing pads. The delivery tube further includes a tube handle and a tube surface, and the tube surface has a plurality of holes drilled in it for delivering slurry to the polishing pad surface. Each concentric ring of the polishing table is able to rotate such that all the rings have the same tangential polishing speed. Therefore a wafer surface can be more uniformly polished. Moreover, material having different density, roughness and chemical composition can be chosen to fabricate the polishing pads so that an even better polishing result can be obtained.

Abstract: A method for planarizing a dielectric layer on a semiconductor wafer is provided. In one aspect, the wafer is coated with a resist and the resist selectively removed forming an uncoated peripheral portion of the wafer. The partially coated wafer is then exposed to an etchant such as RIE to etch the dielectric material not covered by the resist and forming a profiled dielectric layer having a thinner peripheral dielectric portion and a remaining thicker original dielectric central portion. The profiled wafer is then planarized using CMP. The dielectric layer is typically SiO.sub.2, PSG, BSP, or BPSG. In another method and apparatus of the invention, a dielectric coated wafer is secured to a rotating turntable and a liquid etchant sprayed at the periphery of the wafer from a distribution conduit to etch and remove dielectric from a circumferential edge of the wafer forming a profiled dielectric layer as above which is then planarized by CMP.

Abstract: A chemicomechanical polishing (CMP) apparatus for polishing a semiconductor wafer of the present invention includes a polishing pad and a wafer carrier disposed above the pad. A slurry feed port is positioned upstream of, but in the vicinity of, the wafer carrier in the direction of rotation of the polishing pad. Slurry is fed to the wafer supported by the wafer carrier via the slurry feed port. A slurry removing device is positioned downstream of the wafer carrier in the above direction. A conditioning mechanism for conditioning the pad is interposed between the wafer carrier and the slurry removing device.

Abstract: The present invention provides methods and apparatus for optimizing the removal of thin film layers during planarization of a semiconductor wafer to achieve global uniformity of the entire semiconductor surface while further achieving the planarity within an individual die structure. A wafer polishing system suitably comprises a wafer polishing apparatus, a controller and a wafer polishing recipe. The wafer polishing recipe may be comprised of various operational parameters utilized for controlling the operation of the polishing apparatus.

Abstract: This invention involves a containment ring that may be used in conjunction with a substrate carrier used for polishing a substrate to give the substrate a smooth and planar surface. The containment ring is generally constructed such that it tilts independently of the substrate carrier platen that supports the substrate during polishing. The containment ring is constructed with a surface that supports a small perimeter portion of the back side of the substrate during polishing and has an enclosed area sufficient to allow the substrate to precess.

Abstract: A polishing system comprises: a rotating mounting table 14 which is rotatable while holding an object W to be polished; a rotating polishing plate 28 which has a smaller diameter than that of the rotating mounting table and which is provided with an abrasive layer 30 on the surface thereof; a scanning mechanism 26 for moving the rotating polishing plate in radial directions of the rotating mounting table while pressing the abrasive layer on the object; and abrasive solution supply means 46 for supplying an abrasive solution to the surface of the object. Thus, the system can be decreased in size, and the polished quantity can be partially controlled.

Abstract: An apparatus to generate an endpoint signal to control the polishing of thin films on a semiconductor wafer surface includes a through-hole in a polish pad, a light source, a fiber optic cable, a light sensor, and a computer. A pad assembly includes the polish pad, a pad backer, and a pad backing plate. The pad backer includes a pinhole and a canal that holds the fiber optic cable. The pad backer holds the polish pad so that the through-hole is coincident with the pinhole opening. A wafer chuck holds a semiconductor wafer so that the surface to be polished is against the polish pad. The light source provides light within a predetermined bandwidth. The fiber optic cable propagates the light through the through-hole opening to illuminate the surface as the pad assembly orbits and the chuck rotates. The light sensor receives reflected light from the surface through the fiber optic cable and generates reflected spectral data. The computer receives the reflected spectral data and calculates an endpoint signal.

Abstract: A carrier assembly includes an internal pressurized fluid circuit applying positioning forces to a ring extension. Also included is an internal diaphragm having a flexible portion providing gimbal action for the carrier assembly. The pressure between the diaphragm and a pressure plate changes the surface curvature of the pressure plate in a controlled manner. An automatic ring extension is also provided.

Abstract: A slurry recycling system for a CMP apparatus includes a flow path through which a slurry used in the CMP apparatus flows. A first filter is disposed in the flow path for filtering out foreign matter of a particle size of more than 0.5 microns mixed in said slurry. A second filter is preferably disposed in the flow path at a location upstream of and away from the first filter for filtering out foreign matter of a particle size of more than 10 microns mixed in said slurry. Preferably, provisions are made for a concentration adjuster for adjusting the concentration of abrasives in said slurry to substantially an initial value before use, and a pH adjuster for adjusting the pH of said slurry to substantially an initial pH value before use.

Abstract: A polishing apparatus includes a turntable with an abrasive cloth mounted on an upper surface thereof, and a top ring disposed above the turntable for supporting a workpiece to be polished and pressing the workpiece against the abrasive cloth under a predetermined pressure. The turntable and the top ring are movable relatively to each other to polish a surface of the workpiece supported by the top ring with the abrasive cloth. The abrasive cloth has a projecting region on a surface thereof for more intensive contact with the workpiece than other surface of the abrasive cloth. The projecting region has a smaller dimension in a radial direction of the turntable than a diameter of the workpiece when the projecting region is held in contact with the workpiece. A position of the projecting region is determined on the basis of an area in which the projecting region acts on the workpiece.

Abstract: In a wafer lapping method including a first step of lapping irregularities of a surface of a wafer to flatten the surface of the wafer by pressing the surface of the wafer against an abrasion pad (2) with an abrasive agent containing abrasive particles fed onto the abrasion pad, the method further includes a second step of feeding, instead of the abrasive agent upon completion of the lapping step, onto the abrasion pad a chemical solution (6) for use in preventing agglomeration of the abrasive particles contained in the abrasive agent which remains on the abrasion pad. This results in preventing the abrasion pad from drying. Following the second step, a third step is carried out for lapping irregularities of a surface of a different wafer to flatten the surface of the different wafer by pressing the surface of the different wafer against the abrasion pad with the abrasive agent fed onto the abrasion pad instead of the chemical solution.

Abstract: The present invention provides a control device for maintaining a chemical mechanical polishing (CMP) machine in a wet mode, the CMP machine comprising a polishing pad, a slurry sprinkler for sprinkling liquid or deionized water, and at least one carrier head, the control device comprising a sensor positioned on the CMP machine for sensing the operational status of the slurry sprinkler and generating a corresponding sensing signal; and a control unit electrically connected to the sensor for measuring the time period over which the slurry sprinkler is closed wherein when the measured time period exceeds a predetermined length, the control unit will either send a warning signal or turn on the slurry sprinkler to sprinkle liquid onto the polishing pad according to a predetermined process so as to maintain the polishing pad in a wet mode.

Abstract: A polishing fixture, and method, comprising a base. A shaft is joined with the base. A platform is joined with the shaft and located remote from the base. A sample holder is joined with the shaft, wherein the platform moves relative to the base and the sample holder. In operation, the invention comprises fixing a device to the sample holder of the fixture and then placing the fixture on a polishing surface in a polishing position wherein the device is automatically positioned adjacent the polishing surface.

Abstract: A CMP machine includes several polishing tables mounted on a carousel, which rotates in one direction. Each of the polishing tables includes a polishing pad. Each polishing pad can polish one wafer on its first surface. Each polishing pad also has one distributing duct used to supply slurry onto the polishing pad. An exhaust duct is included to exhaust slurry, in which the exhaust duct has a first end and a second end. The first end of the exhaust duct is coupled to slurry. A regulating valve is included to regulate slurry exhaust. An exhaust pump is included to produce a exhausting force of slurry. The exhaust pump is coupled to the second end of the exhaust duct. A regulating valve controller is included to control the regulating valve.

Abstract: A surface polishing machine includes a polishing tool having a polishing tool face, a pressurizing member, placed on and movable in unison with a workpiece placed on the annular polishing tool, for pressurizing the workpiece toward the polishing tool, and a polishing-position retaining mechanism for holding the workpiece at a predetermined polishing position by preventing it from moving in unison with the polishing tool, while permitting it to rotate, as the polishing tool rotates. To reduce the overall size of the polishing machine and carry out highly accurate polishing, the polishing tool has its diameter larger than the diameter of the workpiece and smaller than twice the workpiece diameter. Alternatively, the polishing tool face is formed with an annular groove coaxially with the center of rotation of the polishing tool so that the annular groove extends to pass through the center of rotation of the workpiece placed on the polishing tool.

Abstract: A polishing apparatus and method capable of polishing stably irrelevant of disorder such as the change of a polishing object, change of a polishing device with lapse of time. A polishing apparatus includes polishing pad 1, polishing table 3 with the polishing pad adhered thereto, table motor 8 for driving the polishing table 3, conditioning device 5 of the polishing pad 1 and conditioning control system 12 for setting conditioning conditions. According to a polishing method of the present invention, conditioning conditions of the polishing pad 1 are set on based on a frictional force exerted between the polishing pad 1 and a substrate or on torque current 10.

Abstract: The present invention describes a method for creating a differential polish rate across a semiconductor wafer. The profile or topography of the semiconductor wafer is determined by locating the high points and low points of the wafer profile. The groove pattern of a polish pad is then adjusted to optimize the polish rate with respect to the particular wafer profile. By increasing the groove depth, width, and/or density of the groove pattern of the polish pad the polish rate may be increased in the areas that correspond to the high points of the wafer profile. By decreasing the groove depth, width, and/or density of the groove pattern of the polish pad the polish rate may be decreased in the areas that correspond to the low points of the wafer profile. A combination of these effects may be desirable in order to stabilize the polish rate across the wafer surface in order to improve the planarization of the polishing process.