Abstract: A substrate holder assembly for retaining a substrate during chemical mechanical polishing is described. The substrate holder assembly includes: (i) a backing plate including a contact surface adapted for supporting components of the substrate holder assembly and the substrate; (ii) a shim positioned adjacent the contact surface of the backing plate for applying pressure on the substrate during chemical-mechanical polishing; and (iii) a carrier film disposed adjacent the shim such that at least a portion of the carrier film adjacent the shim protrudes outwardly.

Abstract: A method and apparatus for controlling a polishing characteristic of a polishing pad used in planarization of a substrate. The method preferably includes controlling the temperature of a planarizing surface of the polishing pad so that waste matter accumulations on the planarizing surface soften and/or become more soluble, and/or material comprising the planarizing surface attains approximately its glass transition temperature. The waste matter accumulations and/or a portion of the planarizing surface are in this way softened and more easily removed. The planarizing surface is either heated directly by directing a flow of heated planarizing liquid or heated air to the planarizing surface or indirectly by heating a support surface beneath the polishing pad or by heating the air proximate to the polishing pad.

Abstract: An optical system is disclosed for the inspection of wafers during polishing which also includes a measurement system for measuring the thickness of the wafer's top layer. The optical system views the wafer through a window and includes a gripping system, which places the wafer in a predetermined viewing location while maintaining the patterned surface completely under water. The optical system also includes a pull-down unit for pulling the measurement system slightly below the horizontal prior to the measurement and returns the measuring system to the horizontal afterwards.

Abstract: A wafer polishing apparatus includes a module frame; a continuous belt rotatable with respect to the frame, the belt having at least one vertically-oriented belt transverse portion including a polishing pad assembly; and at least one pivotable wafer-holding head drive within the frame and having a distal end portion movable to a vertical first position parallel and juxtaposed to the belt transverse portion. The head drive includes a wafer carrier for holding a wafer on the distal end portion of the head drive, while a drive moves the distal end portion and a held wafer into a vertical polishing position abutting the belt transverse portion and pressure is applied to the held-wafer against the polishing pad assembly while the wafer-holding distal end portion is rotated and swept side-by-side. After polishing the drive is reversed and the head drive is pivoted away from the belt transverse portion to a horizontal or other orientation and the then polished wafer removed.

Abstract: An apparatus (96) and method for reconditioning the protective coating (14) of a digital recording disc (10) is provided. The apparatus (96) includes a turntable (98) configured to receive the non-data center section (17) of the digital disc (10), a brake (100) for controlling the rotation speed of the turntable (98) and the disc (10), a turntable support (102) for attaching the turntable (98) to a base (104), a buffing element (52), a motor (54) for rotating the buffing element (52), a buffing element support (58) for attaching the buffing element (52) to the base (104), and a protective housing (106).

Abstract: A polishing apparatus including a plurality of polishing pads on respective rotating platens. The polishing platens, and therefore the attached pads also, may be of substantially different diameters. Multiple wafer heads can simultaneously polish multiple wafers on the multiple polishing pads or at different positions on one of the pads. The wafer heads are suspended from a rotatable carousel, which provides positioning of the heads relative to the polishing surfaces. Additionally, a loading/unloading station is provided. The carousel selectively positions the heads on the polishing surfaces, or positions one of the heads over the loading/unloading station while the remaining heads are located over polishing stations for substrate polishing, at which positions the wafers can be polished. The carousel can rotate to sweep all wafer heads attached thereto over respective polishing pads that they overlie.

Abstract: A carrier fixture that does not include transport channels or openings for directing a slurry to a substrate being polished. The carrier fixture may have an inner support coupled to a ring member that contacts a substrate during polishing. The carrier fixture may also have outer supports coupled to the ring member. The carrier fixture is used to manufacture integrated circuits.

Abstract: An apparatus for chemical-mechanical-polishing(CMP) is described which employs a dedicated optical film thickness monitor for quasi in-situ assessment of the thickness of a dielectric film on an integrated circuit wafer during CMP operations involving planarization and polish-back. The wafers being polished remain mounted on the CMP wafer carrier and are transported from the polishing platen to the optical film thickness measuring device by an integral mechanical transport assembly which can be operated either manually or automatically by a computer. Real-time polishing rates are determined after each polish/measurement cycle so that time variant polishing rates are redressed.

Abstract: To planarize an insulating film formed on a semiconductor substrate, a polishing slurry containing cerium oxide is used to polish the surface of the insulating film. Using the cerium oxide included slurry as a polishing agent, the insulating film is not contaminated by alkali metals during the polishing process. Furthermore, the insulating film is polished at an enhanced polishing rate.

Abstract: A method and apparatus for polishing a semiconductor wafer using a polishing pad. Circumferential rings of alternating compressibility of hard and soft/sponge-like material are located in the polishing pad. The concentric rings may also be located off-center from the geometric center of the polishing pad.

Abstract: A chemical mechanical polishing apparatus includes a rotating plate on which a substrate is received, and a polishing pad which moves across the substrate as it rotates on the plate to polish the substrate. The load of the pad against the substrate, and the rotary speed of the plate, may be varied to control the rate of material removed by the pad.

Abstract: A sure-seal rolling pin assembly of a lapping and polishing machine for substantially eliminating friction between the sure-seal rolling pin assembly and a work carrier and for substantially reducing particle contamination between the sure-seal rolling pin assembly and the work carrier. The lapping and polishing machine has a plurality of gears operatively connected to one another by the work carrier and each gear has a counterbore which has a surface. The sure-seal rolling pin comprises a pin, a plurality of ball bearing units and a torsionally stretchable seal. The pin has a longitudinal axis, a head portion and a body portion connected to the head portion and the head portion has a diameter and an outer surface. The body portion has a lower surface located adjacent the outer surface and is removably inserted into the counterbore of one of the gears.

Abstract: For removing a scratch or stain from a surface of a disk such as a CD, a disk cleaner/scourer/polisher device has a scouring member such as a buff. The disk is rotated about its axis, and the buff is pressed against the surface of the disk and rotated also with the axis of rotation of the buff being perpendicular to the surface of the disk, scouring is uniform and does not impair surface flatness. Changing between scouring members, between scratch removal and polishing is facilitated by a lifting mechanism for selectively pressing the corresponding scouring member against the surface.

Abstract: A conditioner apparatus uses one or more linear conditioners. The linear conditioners extend from the edge of the polishing pad almost to the center of the pad. The conditioner apparatus may use two conditioner rods located on either side of a radial segment. The rods gimbal so that if one rod rises, the other rod is forced downwardly. In addition, the rods can pivot independently about a lateral axis, but they cannot pivot around the vertical axis. The linear conditioners may be actuated by a piezoelectric member or swept by an arm toward and away from the center of the polishing pad.

Abstract: The present invention relates generally to a method for conditioning polishing materials that are generally used to polish disks used for magnetic recording. The polishing material is conditioned by moving a conditioning ring relative to the polishing material. More particularly, the conditioning ring is rotated and/or orbited across the surface of the polishing material, so that the material is conditioned. Preferably, the conditioning ring comprises an annular ring of abrasive material fixedly applied to a substantially planar surface of the conditioning ring.

Abstract: A method of planarizing a substrate employs two separate chemical mechanical polishing (CMP) steps. In the first CMP step, the substrate is polished using a first CMP slurry solution and a polishing pad. A diluting solution is then applied to the polishing pad to remove slurry of the first CMP step. In the second CMP step, after applying the diluting solution to the polishing pad to remove the first slurry, second CMP slurry solution is applied to the polishing pad to facilitate additional planarization of the substrate. In a particular embodiment of this invention, the diluting solution comprises a buffer solution having a pH level corresponding to a pH level of one of the first or second CMP slurry solution. In accordance with another aspect of this embodiment, a plurality of different diluting solutions are applied to the polishing pad intermediate the respective first and second CMP steps.

Abstract: A polishing apparatus is used for polishing a workpiece such as a semiconductor wafer to a flat mirror finish. The polishing apparatus has a pusher for transferring the workpiece between a top ring of a polishing apparatus and the pusher. The polishing apparatus includes a turntable having a polishing surface, a top ring for supporting the workpiece to be polished and pressing the workpiece against the polishing surface, and a pusher for transferring the workpiece between the top ring and the pusher. The pusher comprises a workpiece support for supporting the workpiece, an actuating unit for moving the workpiece support in a vertical direction, a sliding mechanism movable within a horizontal plane, and a positioning mechanism for positioning the workpiece support and the top ring with respect to each other in association with the sliding mechanism when the workpiece is transferred between the workpiece support and the top ring.

Abstract: Methods and apparatus for planarizing the surface of a semiconductor wafer by applying non-uniform pressure distributions to a polishing pad are disclosed. According to one aspect of the present invention, a chemical mechanical polishing apparatus for polishing a surface of a semiconductor wafer includes a polishing pad with a first surface and a second surface. The first surface of the polishing pad is arranged to contact the surface of the semiconductor wafer in order to polish the surface of the semiconductor wafer. The apparatus also includes a mechanism which is used to apply a non-uniform pressure distribution over the second surface of the polishing pad, wherein applying the non-uniform pressure distribution to the polishing pad facilitates evenly polishing the surface of the semiconductor wafer. In one embodiment, the mechanism for applying the non-uniform pressure distribution to the polishing pad is an air bladder arrangement.

Abstract: A polishing apparatus is used for polishing a workpiece such as a semiconductor wafer to a flat mirror finish. The polishing apparatus has an exhaust device for exhausting air in the polishing apparatus. The polishing apparatus includes a housing, a polishing section housed in the housing for polishing a workpiece, a cleaning section housed in the housing for cleaning the workpiece which has been polished, and a base comprising a plurality of structural members for supporting at least one device in at least one of the cleaning section and the polishing section. At least one of the structural members has a fluid passage therein and intake openings to serve as an exhaust duct. The polishing apparatus further comprises a main exhaust duct communicating with the exhaust duct and extending to an exterior of the housing for exhausting air introduced in the exhaust duct.

Abstract: A chemical mechanical polishing apparatus is provided which is capable of polishing an essentially non-streaked mirrored surface in a highly efficient manner, and which is capable of achieving a degree of flatness of +/-0.1 mm or less.

Abstract: The present invention relates to a chemical mechanical polishing (CMP) machine and method in which at least one polishing device is provided with a vertically-oriented polishing surface and a slurry delivery mechanism. As a result, the footprint of the machine is greatly reduced and the prevention of contaminants embedding in the polishing device can be promoted.

Abstract: An apparatus for evenly polishing or planarizing the surfaces of workpieces includes a distributor with a reservoir and a plurality of conduits for uniformly guiding a fluid across a surface of a polishing material. The apparatus is configured to couple to a polishing machine that processes surfaces of workpieces such as semiconductor wafers and computer discs. The reservoir receives a fluid from an exterior source and the fluid is pooled in the reservoir before passing down the conduits to the polishing material. When multiple conduits are employed, the conduits are evenly spaced around the distributor to facilitate uniform application of fluid to a number of locations on the polishing material.

Abstract: Apparatuses and methods are disclosed using a fixed abrasive polishing pad to perform mechanical polishing of a surface. The apparatus includes a polishing pad positioned opposing a wafer support to provide for polishing of a surface of a wafer placed on the support. The polishing pad includes a first member having a first polishing surface formed from an abrasive first material that is structurally degradable during polishing. The polishing pad also includes a second member having a second polishing surface formed from a second material that is less degradable and less abrasive relative to said first material. The first and second polishing surfaces define a polishing face that is brought into contact with the surface to be polished.

Abstract: A polishing pad (34) with a poromeric structure polishes two dissimilar materials (56, 58). By using a relatively softer pad. and conditioning, relatively constant times can be used for polishing the dissimilar materials (56, 58). This makes polishing more predictable and increases the number of substrates that can be polished using a single polishing pad (34). Polishing pads (34) are typically changed when other maintenance is performed on the polisher rather than when the polishing rate becomes too low.

Abstract: In a chemical-mechanical-polishing (CMP) process, semiconductor substrates are rotated against a polishing pad covered by a layer of polishing slurry. A polishing pad maintenance apparatus is developed to reduce glazing effects, enhance the pad's operating life, achieve uniform planarity through a constant polishing rate, and minimize scratches or other defects from the polished surface, during a chemical-mechanical polishing process. This invention combines both the removal of particles and debris while effectively conditioning the pad surface. The polishing pad maintenance apparatus performs three main functions: loosening particles and debris; conditioning the polishing pad; and, removing the remaining particles and debris that result from the slurry and conditioning processes. The three functions are performed in sequence by a forced fluid spray, an abrasive mechanical agitator, and a vacuum.

Abstract: A technique for controlling a polishing rate across a substrate surface when performing CMP, in order to obtain uniform polishing of the substrate surface. A support housing which underlies a polishing pad includes a plurality of openings for dispensing a pressurized fluid. The openings are arranged into a pre-configured pattern for dispensing the fluid to the underside of the pad opposite the substrate surface being polished. The openings are configured into a number of groupings, in which a separate channel is used for each grouping so that fluid pressure for each group of openings can be separately and independently controlled.

Abstract: A polishing pad and method of polishing with a chemical mechanical planarization apparatus includes providing a bulk polishing pad material having a front polishing surface side and a back side. The polishing pad further includes a polishing pad wear indicator for indicating a polishing pad wear during a life cycle of the polishing pad. The polishing pad wear indicator is formed on the back side of the bulk polishing pad material.

Abstract: A workpiece holding mechanism is used for holding a wafer. The wafer is sandwiched between a holding plate of the workpiece holding mechanism and a polishing pad attached to a polishing turn table. The workpiece is pressed against the polishing pad with a predetermined pressure so that the bottom surface of the wafer is polished. Water is confined within a fluid confinement space defined between an elastic membrane and the holding plate so as to press the wafer via the elastic membrane. There is provided a volume adjustment screw that can be advanced toward the fluid confinement space and be retracted therefrom. Through adjustment of the screw, the elastic membrane is caused to have a flat surface, so that the elastic member is in close contact with the entire surface of the wafer. A holding membrane made of polyurethane foam is bonded to the surface of the elastic membrane, and a template is bonded to the surface of the holding membrane so as to improve the holding performance.

Abstract: A method of planarizing a layer of a workpiece such as a semiconductor wafer includes rotating the layer against an electrolytic polishing slurry and flowing an electrical current through the slurry and through only one major side and/or minor sides of the layer, to remove portions of the layer. The one major side carries no microelectronic components which might be damaged by the current. At least a part of each step of rotating and of flowing occurs simultaneously. An apparatus for planarizing a layer includes a rotatable workpiece carrier, a rotatable platen arranged proximately to the carrier, a polishing pad mounted on the platen, and workpiece electrodes. The workpiece electrodes are movably attached to the carrier so as to engage electrically the minor sides of a layer when a workpiece is held on the carrier.

Abstract: The present invention is a polishing pad that planarizes and cleans a semiconductor wafer in chemical-mechanical planarization processes. The polishing pad has a polishing body and a cleaning element positioned in the polishing body. The polishing body includes a planarizing surface, a basin formed in the body, and an opening at the planarizing surface defined by the basin. The cleaning element is positioned in the basin so that a cleaning surface of the cleaning element is positioned in the opening proximate to a plane defined by the planarizing surface. In operation, the cleaning surface periodically engages the wafer when the wafer is engaged with the pad to remove residual materials from the surface of the wafer.

Abstract: An apparatus for polishing wafers, preferably by chemical mechanical polishing. The apparatus includes a table defining a planar polishing surface adapted to contain a polishing medium and a wafer carrier assembly adapted to hold a wafer against the polishing surface. The wafer carrier assembly includes a wafer carrier and prevents rotation of the wafer carrier with respect to the polishing table even when the wafer carrier is moved in a circular or orbital path on the polishing surface. Polishing is carried out relative movement between the wafer carrier and the polishing surface in any direction within the plane of the polishing surface. The relative movement can be accomplished by moving the wafer carrier, the polishing table, or a combination of movements of the wafer carrier and polishing table.

Abstract: In the polishing system of the present invention, a adhering unit adheres a wafer on a carrying plate using liquid. A polishing unit polishes the wafer using a polishing plate. A feeding unit conveys the carrying plate from the adhering unit to the polishing unit. A dismounting unit removes the wafer from the carrying plate. A first discharging unit conveys the carrying plate from the polishing unit to the dismounting unit. A cleaning unit cleans the vacant carrying plate. A second discharging unit conveys the carrying plate from the dismounting unit to the cleaning unit. A third discharging unit conveys the carrying plate from the cleaning unit to the adhering unit. The units are formed into a loop lines so that the carrying plate is circulated in the loop line and the wafers are polished therein.

Abstract: The method for polishing a semiconductor substrate includes the steps of (a) forming a flowing liquid layer between a semiconductor substrate and a substrate holder to thereby support the semiconductor substrate therebetween by surface tension of the flowing liquid layer, and (b) compressing the semiconductor substrate onto a polishing cloth including process liquid therein. The method ensures that a semiconductor substrate is not damaged at a reverse surface thereof and also that a semiconductor substrate is not contaminated by particles contained in process liquid, because the flowing liquid layer prevents particles of process liquid from entering between the semiconductor substrate and the substrate holder.

Abstract: A polishing apparatus is used for polishing a workpiece such as a semiconductor wafer to a flat mirror finish. The polishing apparatus has an interlock function includes a turntable having a polishing surface thereon, a top ring for holding a workpiece to be polished and pressing the workpiece against the polishing surface on the turntable, a first motor for rotating the turntable, and a second motor for rotating the top ring. The polishing apparatus further comprises a first actuator for lifting and lowering the top ring, a second actuator for moving the top ring in a horizontal direction, and a control unit for controlling the motors and the actuators. The control unit controls the motors and the actuators in such a manner that when an abnormality is detected in at least one of the motors and the actuators, at least one of the motors and the actuators other than that of the abnormality performs a predetermined operation.

Abstract: A polishing apparatus comprises a first surface plate for supporting a polishing object, a driving mechanism for rotating the first surface plate, a second surface plate arranged so as to oppose to the first surface plate, an abrasive cloth stuck to the second surface plate, a vibration detector attached to the first surface plate or the second surface plate for detecting vibration in polishing, a controlling portion for controlling polishing operation of the first surface plate and the second surface plate, and signal analyzing unit for analyzing vibration intensity detected by the a vibration detector through frequency analysis, integrating the vibration intensity relative to time, and transmitting a polishing stop signal to stop polishing operation of the first surface plate and the second surface plate to the controlling portion when variation in a resultant integral value relative to time is less than a first reference value or when the resultant integral value is less than a second reference value.

Abstract: A dresser for dressing a polishing cloth adhered to a platen is provided with different dressing tools such as a lapping tool and a brush disposed around the lapping tool. In polishing, the platen is rotated and a wafer holding unit sucks and holds a wafer to press it against the polishing cloth while the wafer is rotated. In this manner, while polishing is performed, dressing is performed at the same time by pressing the dressing tools of the dresser against the polishing cloth. The brush and lapping tool may be rotated independently, or the dresser may be swung while it is rotated.

Abstract: A chemical mechanical polishing apparatus polishes the surface of a substrate to remove material therefrom, The apparatus includes a carrier, which positions the substrate against the rotating polishing pad. The carrier includes an integral loading member therein, which controls the load force of the substrate against the polishing pad. Multiple substrates may be simultaneously polished on a single rotating polishing pad, and the polishing pad may be rotationally oscillated to reduce the likelihood that any contaminants are transferred from one substrate to another along the polishing pad. A multi-lobed groove in the polishing pad may be used, in conjunction with a moving substrate, to polish the surface of the substrate.

Abstract: Optical polishing methods and apparatus are disclosed for polishing and planarizing surfaces of a wafer or other workpiece. A polishing apparatus according to the present invention preferably comprises a dispenser for dispensing polishing agent between a polishing body and the surface of the object to be polished. The polishing apparatus moves the polishing body and the object being polished against one another. The polishing body preferably comprises a light-permeable substance. A film-thickness measuring device for measuring the thickness of a film on the object being polished is preferably positioned on the side of the polishing body opposite of the surface of the object being polished. The film-thickness measuring device preferably measures the film thickness by using a light source to irradiate the object being polished through the polishing body. The film-thickness measuring device then uses light reflected from the film of the object being polished to determine the film's thickness.

Abstract: Grooves are cut into an under pad of a polishing pad assembly formed by an under pad and an over pad. The grooves cause channeling of the over pad so that slurry received on the polishing face of the pad assembly is delivered across the pad assembly's surface in a controlled fashion.

Abstract: A vertically-oriented wafer polishing apparatus and method is disclosed including a vertically-oriented polishing device, a semiconductor wafer carrier and a cleaning module to clean the polishing device by removing contaminants that may scratch the wafer and also reduce the polishing rate of the apparatus. The device reduces the "down time" of a polishing apparatus and, therefore, increases the yield of well-polished wafers in a given time period.

Abstract: A polishing lap which is resistant to attack from corrosive and reactive ishing media and which has a surface which is sufficiently resilient to provide good finishes without hindering dimensional controlling and accuracy of the texturing comprises: a lap substrate wherein the surface of the lap substrate has an overall shape and a localized texture; and a replaceable lap film applied to the lap substrate surface and which is deformed to correspond to the localized texture of the lap substrate surface. The polishing lap can be easily reconditioned if contaminated or easily modified for use with different abrasives and polishing media.

Abstract: An improved chemical mechanical polishing method of and apparatus (30) for performing CMP process on a plurality of semiconductor devices includes a plurality of carrier devices (14), each for receiving one of the plurality of semiconductor devices (22) such as a semiconductor wafer. A plurality of polishing pad mechanisms (12) associate with each of the carrier devices (14) so that each of the plurality of polishing pad mechanisms (12) separately and approximately simultaneously polishes one of the plurality of semiconductor devices (22). Control means controls the movement of each of the plurality of polishing pad mechanisms (12) relative to the associated semiconductor device (22) so that the semiconductor device (22) is separately polished.

Abstract: The polishing pad for a chemical mechanical polishing apparatus and a method of making the same. The polishing pad has a covering lawyer with a polishing surface and a backing layer which is adjacent to the platen. A first opening in the covering layer with a first cross-sectional area and a second opening in the backing layer with a second, different cross-sectional area form an aperture through the polishing pad. A substantially transparent polyurethane plug is positioned in the aperture, and an adhesive material fixes the plug in the aperture.

Abstract: A cutting chuck for use with a cutting blade and for holding a semiconductor wafer in place during a dicing process and a die pick for picking the segmented semiconductor wafer from the chuck. The chuck includes a surface for supporting the wafer and several ports in the surface connected to a vacuum source. Preferably, the cutting chuck includes a housing having a base and a wall. A vacuum chamber is provided within the housing and on top of the base. A porous layer is located in housing and above the vacuum chamber. A surface layer is above the porous layer and contains ports connecting the surface supporting the wafer to the vacuum chamber via the porous layer. In a most preferred embodiment, the chuck is removeably attached to the vacuum source via a check valve. The cutting chuck may also include recesses in the surface to prevent impingement on the cutting chuck by a cutting blade during wafer dicing.

Abstract: A polishing apparatus includes a turntable with an abrasive cloth mounted on an upper surface thereof, and a top ring disposed above the turntable for supporting a workpiece to be polished and pressing the workpiece against the abrasive cloth under a predetermined pressure. The turntable and the top ring are movable relatively to each other to polish a surface of the workpiece supported by the top ring with the abrasive cloth. The abrasive cloth has a projecting region on a surface thereof for more intensive contact with the workpiece than other surface regions of the abrasive cloth. The projecting region has a smaller dimension in a radial direction of the turntable than a diameter of the workpiece when the projecting region is held in contact with the workpiece. A position of the projecting region is determined on the basis of an area in which the projecting region acts on the workpiece.

Abstract: A method and apparatus provides a method for polishing a surface of a substrate with a polishing pad. The surface of the substrate is polished using the polishing pad. The surface of the substrate is deformed in response to changes in the polishing pad, wherein deformation of the surface of the substrate increases uniformity in polishing of the surface of the substrate.

Abstract: A polishing apparatus includes an arrangement of a plurality of units to deal with various operations and a robot having at least one arm. The plurality of units are disposed around the robot and include a loading unit for receiving thereon a, e.g. dry, workpiece to be polished, a polishing system including at least one polishing unit for polishing the workpiece, a washing system and a drying system at least one washing unit for washing and drying the polished workpiece, and an unloading unit for receiving thereon a resultant clean and dry polished workpiece.

Abstract: The present invention is a planarizing machine for use in chemical-mechanical planarization of semiconductor wafers that has a moveable platen, a polishing pad, a wafer carrier, and a wafer separator. The polishing pad is positioned on the platen, and it has a planarizing surface with an operational zone upon which the wafer may be planarized. The wafer carrier holds a wafer and is positionable opposite the polishing pad to engage the wafer with the operational zone of the polishing pad. The wafer separator engages either the polishing pad, the wafer, or the wafer carrier to urge a portion of the wafer away from the pad.

Abstract: A polishing apparatus makes it possible to accurately detect the temperature of a workpiece during polishing and to perform polishing end point determination on the basis of this detected temperature. The polishing apparatus polishes irregularities in a surface of a workpiece such as for example a semiconductor wafer to a flat and mirror-like finish. A top ring holding a semiconductor wafer is provided with a temperature sensor. Frictional heat generated in the semiconductor wafer by polishing is detected by the temperature sensor, and a polishing end point is determined on the basis of the detected temperature.

Abstract: Provided is a chemical mechanical polishing pad having grooves in its polishing surface which have a sub-surface cross-sectional span greater than the grooves' surface opening span. In this way, the edges of the groove are undercut. This provides both increased groove volume for a given pad surface area and groove depth, and variable flexibility in the polishing pad's surface. Grooves in pads of the invention also typically include a neck region at the top of the groove, where the groove side walls are substantially parallel. This provides a margin for the pad to wear during polishing without affecting the pad's surface area. The invention also provides a method and apparatus for cutting grooves in a chemical mechanical polishing pad.