Abstract: Methods for removing material from microfeature workpieces are disclosed. A method in accordance with one embodiment of the invention includes disposing a surfactant-bearing polishing liquid between a doped silicon material of the microfeature workpiece and a polishing pad material. At least one of the workpiece and the polishing pad material is moved relative to the other to simultaneously and uniformly remove at least some of the doped silicon material from portions of the workpiece having different crystalinities and/or different doping characteristics. The surfactant can include a generally non-ionic surfactant having a relatively low concentration in the polishing liquid, for example, from about 0.001% to about 1.0% by weight.

Abstract: A polishing head of a wafer polishing apparatus includes a body, a center supporter installed in a center of the body, a perforated plate including an upper plate and a lower plate that is disposed below the center supporter and has a plurality of thru-holes, a membrane covering the perforated plate, and a moving member for moving the lower plate up and down. By moving the lower plate up and down, the polishing head forcibly recovers an elasticity of the membrane (especially at an edge portion of the membrane).

Abstract: An apparatus for planarizing a work piece includes an easily assembled work carrier. The carrier includes a carrier insert having a work piece bladder clamped to a carrier backing plate with a plurality of clamps to form a plurality of web plenums. The outer edge of the bladder is supported by a rib that is coupled to a carrier plenum. By adjusting the pressure in the carrier plenum, the pressure exerted on the edge of a work piece during a planarization operation can be adjusted. The carrier also includes a floating wear ring that surrounds the work piece bladder and a work piece mounted on that bladder. By adjusting the force exerted by the wear ring on a polishing pad, independently of the pressure exerted by the rib at the edge of the bladder, the material removal rate near the edge of the work piece can be controlled.

Abstract: The present invention provides an apparatus and method for protecting a work piece during surface processing. The apparatus employs a protective material to protect a wafer during backside grinding. The apparatus can further include a vacuum chuck that allows the passage of a vacuum signal, a frame holding the protective material, a frame holder to hold the frame, and a fastening arrangement to fasten the frame holder to the chuck adjacent a support surface. The method provided by the invention can include providing a vacuum chuck, placing a protective material in contact with the chuck, placing a wafer in contact with the protective material, applying a vacuum signal securing the wafer with the chuck, and grinding the backside surface of the wafer.

Abstract: An apparatus for planarizing a work piece includes an easily assembled work carrier. The carrier includes a carrier insert having a work piece bladder clamped to a carrier backing plate with a plurality of clamps to form a plurality of web plenums. The outer edge of the bladder is supported by a rib that is coupled to a carrier plenum. By adjusting the pressure in the carrier plenum, the pressure exerted on the edge of a work piece during a planarization operation can be adjusted. The carrier also includes a floating wear ring that surrounds the work piece bladder and a work piece mounted on that bladder. By adjusting the force exerted by the wear ring on a polishing pad, independently of the pressure exerted by the rib at the edge of the bladder, the material removal rate near the edge of the work piece can be controlled.

Abstract: A method and apparatus of in situ monitoring and dispersing unwanted particles in slurry used during CMP polishing. The method includes providing a slurry path, applying to the slurry path a microcavitation field of a first level to detect particles of a predetermined size, applying to the slurry path a microcavitation field of a second level that is capable of dispersing said particles, and after the second applying step, feeding the slurry to a CMP polishing unit. Particle size may be detected and/or the microcavitation field strength may be set according to particle size. In addition, field strength may be calibrated according to levels determined by polystyrene control particles of a known size and/or concentration. A single or dual transducer may apply the microcavitation.

Abstract: Carrier assemblies, planarizing machines with carrier assemblies, and methods for mechanical and/or chemical-mechanical planarization of micro-device workpieces are disclosed herein. In one embodiment, the carrier assembly includes a head having a chamber, a magnetic field source carried by the head, and a fluid with magnetic elements in the chamber. The magnetic field source has a first member that induces a magnetic field in the head. The fluid and/or the magnetic elements move within the chamber under the influence of the magnetic field source to exert a force against a portion of the micro-device workpiece. In a further aspect of this embodiment, the carrier assembly includes a flexible member in the chamber. The magnetic field source can be any device that induces a magnetic field, such as a permanent magnet, an electromagnet, or an electrically conductive coil.

Abstract: A carrier head for chemical mechanical polishing of a substrate includes a base and a flexible membrane extending beneath the base to define a chamber. The flexible membrane has a core of a first material and an outer layer of a second material having a lower adhesion to the substrate than the first material. An exposed surface of the outer layer provides a mounting surface for the substrate.

Abstract: Polishing heads to polish the surface of a semiconductor wafer and methods of using the same are disclosed. A disclosed polishing head includes at least one rotating head to apply a downward force; and a plurality of vacuum cells to hold the wafer via a vacuum force and to convey a least some of the downward force from the at least one rotating head to the wafer.

Abstract: The abrasive machine of the present invention is capable of changing pressure applied to a work piece and easily defining optimum abrading conditions. The abrasive machine comprises: a pressure vessel capable of increasing and reducing inner pressure; an abrasive plate provided in the pressure vessel; a pressing plate provided on the abrasive plate, the pressing plate pressing the work piece onto the abrasive plate; a driving unit relatively moving the abrasive plate with respect to the pressing plate so as to abrade the work piece; and a pressure source connected to the pressure vessel, the pressure source increasing or reducing the inner pressure of the pressure vessel.

Abstract: The present invention provides a wafer carrier that includes an opening, which in one embodiment is a plurality of holes, disposed along the periphery of the wafer carrier. A gas emitted through the holes onto a peripheral back edge of the wafer assists in preventing the processing liquids and contaminants resulting therefrom from reaching the inner region of the base and the backside inner region of the wafer. In another embodiment, a plurality of concentric sealing members are used to prove a better seal, and the outer seal is preferably independently movable to allow cleaning of a peripheral backside of the wafer to occur while the wafer is still attached to the wafer carrier.

Abstract: A carrier head for a chemical mechanical polishing apparatus includes a flexible membrane that applies a controllable load to a substrate in an area with a controllable inner diameter.

Abstract: In one aspect, the invention provides a method for planarizing a circular disc-type semiconductor wafer or other substrate. The method includes the steps of pressing a retaining ring surrounding the wafer against a polishing pad at a first pressure; pressing a first peripheral edge portion of the wafer against the polishing pad with a second pressure; and pressing a second portion of the wafer interior to the peripheral edge portion against the polishing pad with a third pressure. The second pressure may be provided through a mechanical member in contact with the peripheral edge portion; and the second pressure may be a pneumatic pressure against a backside surface of the wafer. Desirably, the pneumatic pressure is exerted through a resilient membrane, or is exerted by gas pressing directly against at least a portion of the wafer backside surface.

Abstract: A chemical mechanical polishing (CMP) apparatus includes a polishing head that is composed of a carrier and a membrane, and is positioned on a polishing pad of a supporting part. The polishing head has a supporter installed at an internal center of the carrier, a chucking ring positioned between the carrier and the supporter, and means for moving the chucking ring up and down in a vertical direction. The supporter forms a sealed space together with the membrane, and the chucking ring chucks the wafer in vacuum.

Abstract: In a system and method to reduce wafer breakages in a wafer handling system, the position of a wafer on a platen is monitored and closing of the platen on a vacuum chamber is prevented if a misaligned wafer is detected. In one embodiment the wafer position is monitored by monitoring the air pressure in vacuum channels of a platen faceplate.

Abstract: A carrier head for chemical mechanical polishing of a substrate includes a base and a flexible membrane extending beneath the base to define a chamber. The flexible membrane has a core of a first material and an outer layer of a second material having a lower adhesion to the substrate than the first material. An exposed surface of the outer layer provides a mounting surface for the substrate.

Abstract: A CMP (chemical mechanical polishing) apparatus having a measuring device for measuring a guide ring. A polishing table is provided. A wafer loading/unloading device is located at a first side of the polishing table. A measuring device is located at a second side of the polishing table. A carrier having a first lateral and a second lateral opposite the first lateral, wherein the first lateral faces the polishing table, the wafer loading/unloading device or the measuring device. A guide ring is disposed on the first lateral of the carrier. A transfer device is disposed on the second lateral of the carrier and connected to the carrier, wherein the transfer device is used to move the carrier onto the polishing table, the wafer loading/unloading device or the measuring device. The measuring device is used to automatically and immediately measure the severity of scoring on the guide ring.

Abstract: A pad backer is described, comprising a backing plate, an elastomer layer and a pad backing ring. The elastomer layer has a bottom surface bonded to the backing plate and an upper surface with a protrudent part at the edge portion thereof. The pad backing ring has an inner bottom surface with a recessed part thereon matching with the protrudent part on the upper surface of the elastomer layer, such that the elastomer layer is fixed onto the pad backing ring through engagement of the protrudent part and the recessed part.

Abstract: An apparatus for polishing a wafer comprises a supporting portion having an abrasive pad disposed thereon, and a polishing head disposed over the abrasive pad. The polishing head comprises a carrier having at least two fluid passages, a retainer ring disposed on a lower edge of the carrier, forming a space for receiving the wafer, a supporter disposed in the carrier, and a flexible membrane disposed to be in contact with the wafer. The supporter has an upper surface portion, a lower surface portion, a plurality of first holes, a plurality of second holes, and a first chamber. The upper surface portion of the supporter forms a second chamber along with an inner surface of the carrier. The second chamber is in communication with one of the two fluid passages of the carrier and the second holes are formed in a lower surface portion of the supporter to communicate with the second chamber.

Abstract: A method and apparatus for improving uniformity of the rate of removal of material from the surface of a workpiece, such as semiconductor substrate, by polishing. In accordance with the invention, the workpiece is subjected to a vibratory polishing method, and optionally at least one additional polishing motion selected from rotational, oscillating, sweeping, orbital and linear polishing motions. As a result, polished workpieces, such as semiconductor wafers, have reduced surface defects, improved planarity, and are polished more uniformly over a wider area.

Abstract: The polishing pad for a chemical mechanical polishing apparatus, and a method of making the same. The polishing pad has a covering layer with a polishing surface and a backing layer which is adjacent to the platen. A first opening in the covering layer with a first cross-sectional area and a second opening in the backing layer with a second, different cross-sectional area form an aperture through the polishing pad. A substantially transparent polyurethane plug is positioned in the aperture, and an adhesive material fixes the plug in the aperture.

Abstract: A system for polishing a substrate has a controller, pressure source, a platen, and a carrier for handling the substrate. The carrier must be able to detect if a substrate is present. In either the case of a false detection of substrate presence or the failure to detect substrate presence, the likely result is damaged substrates, wasted polishing consumables, and down time of the manufacturing facility. Detection is achieved by the substrate causing movement of a plunger and by such movement resulting in a pressure differential that is detected. The reliability of this detection is improved by one or more of a precise relationship of the plunger to a plate that applies pressure to the substrate, a controlled seal that is ensured of being broken when the plunger is moved by the presence of a substrate, and proper spring pressure applied to the plunger to prevent spurious plunger movement.

Abstract: In a polishing apparatus, a polishing tool including abrasive particles and a binder for bonding together the abrasive particles is pressed against a substrate to polish the substrate. The polishing apparatus has a light source for irradiating a polishing surface with light rays for weakening a bond force of the binder for bonding together the abrasive particles, and a waste matter removing mechanism for forcefully removing waste matter produced by polishing or waste matter produced by irradiation. By irradiating the polishing surface with the light rays, dressing of the polishing surface is performed, and products resulting from dressing and the like are removed. The polishing apparatus supplies abrasive particles to the polishing surface stably by dressing and allows high-speed polishing of the substrate.

Abstract: The polishing pad for a chemical mechanical polishing apparatus and method of making the same has a polishing pad with a bottom layer, a polishing surface on a top layer and a transparent sheet of material interposed between the two layers. Slurry from the chemical mechanical polishing process is prevented from penetrating the impermeable transparent sheet to the bottom layer of the polishing pad.

Abstract: A carrier head with a flexible member connected to a base to define a first chamber, a second chamber and a third chamber. A lower surface of the flexible member provides a substrate receiving surface with an inner portion associated with the first chamber, a substantially annular middle portion surrounding the inner portion and associated with the second chamber, and a substantially annular outer portion surrounding the middle portion and associated with the third chamber. The width of the outer portion may be significantly less than the width of the middle portion. The carrier head may also include a flange connected to a drive shaft and a gimbal pivotally connecting the flange to the base.

Abstract: A system (100) and method for polishing and planarizing a substrate (105) is provided that reduces non-uniformities in the removal of material from the edge of the substrate due to a rebound effect. In one embodiment system (100) includes a polishing head (140) having a carrier (155), a subcarrier (160) carried by the carrier and adapted to hold the substrate during a polishing operation, and a retaining ring (170) having an inner edge (220) disposed about the subcarrier. A lower surface (210) of the retaining ring (170) is in contact with a polishing surface (125) during the polishing operation, and has at least one annular recess (215) formed therein to enable the polishing surface compressed under the retaining ring to rebound into the annular recess, thereby reducing the rebound effect and inhibiting non-planar polishing of the surface of the substrate (105).

Abstract: A carrier head for chemical mechanical polishing of a substrate having a front surface, a back surface and an edge. The carrier head has a base, an inner retaining ring positioned beneath the base, and an outer retaining ring surrounding the inner retaining ring to retain the inner retaining ring. The inner retaining ring has a main portion with a first surface to apply a load to a perimeter portion of the back surface of the substrate and an annular lower projection protruding downwardly from the main portion with a second surface to circumferentially surround the edge of the substrate to retain the substrate.

Abstract: In a process for polishing the chamfered peripheral part of a wafer using a polishing cloth while supplying a polishing slurry in order to improve productivity of the process by reducing a polishing time, at least two steps of polishing processes are performed in sequence. The process comprises a first polishing process to polish a particular part, e.g. the part corresponding to the {110} plane of a peripheral part of the wafer and a second polishing process in which the whole part of a peripheral part of the wafer is polished for finishing by means of varying a hardness of the polishing clothes and/or a particle size of abrasives in the slurry such as the hardness of the polishing cloth in the second polishing process being softer than that of in the first polishing process and a particle size of abrasives in the slurry in the second polishing process being finer than that of in the first polishing process.

Abstract: A chemical mechanical polishing (CMP) apparatus includes a polishing head that is composed of a carrier and a membrane, and is positioned on a polishing pad of a supporting part. The polishing head has a supporter installed at an internal center of the carrier, a chucking ring positioned between the carrier and the supporter, and means for moving the chucking ring up and down in a vertical direction. The supporter forms a sealed space together with the membrane, and the chucking ring chucks the wafer in vacuum.

Abstract: Systems and methods for monitoring characteristics of a polishing pad used in polishing a micro-device workpiece are disclosed herein. In one embodiment, a method for monitoring a characteristic of a polishing pad includes applying ultrasonic energy to the polishing pad and determining a status of the characteristic based on a measurement of the ultrasonic energy applied to the polishing pad. In one aspect of this embodiment, applying ultrasonic energy includes applying ultrasonic energy from a transducer. The transducer can be carried by a conditioner, a fluid arm, a micro-device workpiece carrier, or a table. In another aspect of this embodiment, determining the status of the characteristic includes determining a thickness, density, surface contour, roughness, or texture of the polishing pad.

Abstract: An article of manufacture, a method, and an apparatus for use in a chemical mechanical polishing system is provided. In one aspect, an article of manufacture is provided for polishing a substrate including a polishing article having a polishing surface, the polishing surface including a first polishing portion having a first polishing material of a first hardness for polishing a first portion of the substrate, and a second polishing portion having a second polishing material of a second hardness for polishing a second portion of the substrate. The article of manufacture may be disposed on a rotatable, stationary, or linear platen for processing a substrate. In another aspect, a method is provided for processing a substrate, including providing a platen containing the polishing article disposed on the rotatable platen, delivering a polishing composition to the polishing article, and contacting a substrate on the polishing article.

Abstract: An objective of the present invention is to provide a polishing pad for a semiconductor wafer and a laminated body for polishing of a semiconductor wafer equipped with the same which can perform optical endpoint detection without lowering the polishing performance as well as methods for polishing of a semiconductor wafer using them. The polishing pad of the invention comprises a water-insoluble matrix material such as crosslinked 1,2-polybutadiene, and a water-soluble particle such as ?-cyclodextrin dispersed in this water-insoluble matrix material, and has a light transmitting properties so that a polishing endpoint can be detected with a light.

Abstract: An apparatus for polishing a wafer includes a polishing station having a platen on which a polishing pad is installed, a polishing head having a membrane that contacts a surface of the wafer, the membrane securing the wafer and pressuring the wafer against the polishing pad, wherein the polishing station includes a transfer stage for loading the wafer on or unloading the wafer from the polishing head, and wherein the transfer stage includes a pedestal on which the wafer is placed and a fluid supply part for supplying a fluid into a boundary region between the wafer and the membrane to reduce a surface tension between the wafer and the membrane. Preferably, the apparatus further includes a stopper for preventing the wafer placed on the pedestal from being lifted up along with the membrane when the wafer is unloaded from the polishing head onto the pedestal.

Abstract: A linear chemical mechanical polishing apparatus that is equipped with a programmable pneumatic support platen and a method for controlling the polishing profile on a wafer surface during a linear CMP process are disclosed. The programmable pneumatic support platen is positioned juxtaposed to a bottom surface of a continuous belt for the linear CMP apparatus and positioned corresponding to a position of the wafer carrier so as to force the polishing pad against the wafer surface to be polished. The support platen has a predetermined thickness, a plurality of apertures through the thickness and a plurality of openings in a top surface in fluid communication with a gas source through the plurality of apertures.

Abstract: A flat-object holder can hold a flat object-and-frame assembly, and the holder has the flat object fixed to the frame with protection tape. The flat-object holder includes at least a flat object supporting area for fixedly holding the flat object via the protection tape by applying a suction force, and a frame fixing area for fastening the frame. The flat-object holder bearing the flat object-and-frame assembly can be fixedly held by a selected chuck table by applying a negative pressure to the flat object supporting area. The flat-object holder can transfer and put the flat object-and-frame assembly in a container. Thus, no matter how thin the flat object may be, it can be handled without the fear of breaking.

Abstract: A semiconductor device production method and a semiconductor device production apparatus are provided. The semiconductor device production method includes the steps of: sticking a wafer to a stretch tape stretchable by a physical process; dicing the wafer into individual semiconductor chips; stretching the stretch tape by performing the physical process on the stretch tape after the dicing: and grinding the rear surface of the wafer stuck to the stretch tape after the tape stretching.

Abstract: A method and apparatus for the wireless transfer of measurements made during chemical-mechanical planarization of semiconductor wafers with a planarizing machine. The apparatus includes a sensor connected to the semiconductor substrate or a movable portion of the planarizing machine. The apparatus further comprises a display spaced apart from the sensor and a wireless communication link coupled between the sensor and the display to transmit a signal from the sensor to the display. The wireless communication link may include an infrared link, a radio link, an acoustic link, or an inductive link. The sensor may measure force, pressure, temperature, pH, electrical resistance or other planarizing parameters. The sensor may also detect light reflected from a reflective surface of a substrate that is used to calibrate the planarizing machine.

Abstract: A projected gimbal point drive system is disclosed. The projected gimbal point drive system includes a spindle capable of apply a torque, and having a concave spherical surface formed on its lower portion. Further included is a wafer carrier disposed partially within the lower portion of the spindle. The wafer carrier has a convex spherical surface formed on a surface opposite the concave spherical surface of the spindle. In addition, a drive cup is included that is disposed between the spindle and the wafer carrier. The drive cup has a concave inner surface and a convex outer surface, and allows the wafer carrier to be tilted about a predefined gimbal point. In this manner, torque can be applied without affecting the gimbal action.

Abstract: Wafers are prevented from getting damaged on delivery thereof from a sucking and carrying device to a table. A wafer before planarization sucked and held by a sucking board is positioned above a table. Next, wafer is vacuum-attracted by the table, and the table is moved upward by that attraction power in a direction to suck the wafer so as to vacuum-suck it on the table. Subsequently, the wafer is sucked and held only by the table by releasing the sucking and holding thereof by the sucking board.

Abstract: A slurry feeding apparatus includes closed slurry bottle, piping, wet nitrogen generator, wet nitrogen supply pipe, suction and spray nozzles, temperature regulator, flow rate control valves, slurry delivery pump and controller for controlling the operation and flow rate of the slurry delivery pump. While a wafer is being polished by a CMP polisher, the controller continuously operates the pump. On the other hand, while the polisher is idling, the controller starts and stops the pump intermittently at regular intervals. No stirrer like a propeller is inserted into the slurry bottle, but the slurry is stirred up by spraying the slurry through the spray nozzle.

Abstract: A CMP system, a wafer carrier, and components of a wafer carrier are provided for processing a semiconductor topography. In particular, a CMP system, a wafer carrier, and components of a wafer carrier are provided in which a greater pressure may be applied in a first portion of a semiconductor topography than in a second portion of the topography. The first portion may, for example, be adjacent to an outer edge of the topography, while the second portion may include the center of the topography. Alternatively, the first portion and second portion of the semiconductor topography may include any region of the topography. The wafer carrier components may include a carrier plate and/or a carrier backing film adapted to apply a greater pressure in a first portion of the semiconductor topography than in a second portion of the semiconductor topography.

Abstract: A method and apparatus for the wireless transfer of measurements made during chemical-mechanical planarization of semiconductor wafers with a planarizing machine. The apparatus includes a sensor connected to the semiconductor substrate or a movable portion of the planarizing machine. The apparatus further comprises a display spaced apart from the sensor and a wireless communication link coupled between the sensor and the display to transmit a signal from the sensor to the display. The wireless communication link may include an infrared link, a radio link, an acoustic link, or an inductive link. The sensor may measure force, pressure, temperature, pH, electrical resistance or other planarizing parameters. The sensor may also detect light reflected from a reflective surface of a substrate that is used to calibrate the planarizing machine.

Abstract: A polishing tool used for a CMP process is disclosed. The polishing tool includes a polishing platen for holding a wafer faced-up thereon and carrying the wafer to move to and fro between a first position and a second position, a polishing pad for polishing the wafer, and a holder for holding the polishing pad to self-rotate and carrying the polishing pad to move across the wafer surface and further driving the polishing pad to polish the wafer.

Abstract: A method and apparatus for the wireless transfer of measurements made during chemical-mechanical planarization of semiconductor wafers with a planarizing machine. The apparatus includes a sensor connected to the semiconductor substrate or a movable portion of the planarizing machine. The apparatus further comprises a display spaced apart from the sensor and a wireless communication link coupled between the sensor and the display to transmit a signal from the sensor to the display. The wireless communication link may include an infrared link, a radio link, an acoustic link, or an inductive link. The sensor may measure force, pressure, temperature, pH, electrical resistance or other planarizing parameters. The sensor may also detect light reflected from a reflective surface of a substrate that is used to calibrate the planarizing machine.

Abstract: A method and apparatus are provided for polishing a substrate surface. In one aspect, an apparatus for polishing a substrate includes a basin and a polishing head. A carrier is disposed in the basin and has a substrate supporting surface. A retaining ring is disposed on the carrier and at least partially circumscribes the substrate supporting surface. The polishing head is supported above the basin and includes a conductive polishing pad. Embodiments may further include a vent to allow gas to escape through the polishing head. Embodiments may further include an electrolyte supply that flows electrolyte into the polishing head and out through a permeable electrode and the conductive pad to the substrate. Embodiments may also be configured with a polishing head diameter smaller than the substrate supported by the carrier.

Abstract: Techniques for polishing a wafer (10) include closed-loop control. The wafer can be held by a carrier head (100) having at least one chamber whose pressure is controlled to apply a downward force on the wafer. Thickness-related measurements of the wafer can be obtained during polishing and a thickness profile for the wafer is calculated based on the thickness-related measurements. The calculated thickness profile is compared to a target thickness profile. The pressure in at least one carrier head chamber is adjusted based on results of the comparison. The carrier head chamber pressures can be adjusted to control the amount of downward force applied to the wafer during polishing and/or to control the size of a loading area on the wafer against which the downward force is applied.

Abstract: A chemical mechanical polishing (CMP) apparatus includes a polishing head that is composed of a carrier and a membrane, and is positioned on a polishing pad of a supporting part. The polishing head has a supporter installed at an internal center of the carrier, a chucking ring positioned between the carrier and the supporter, and means for moving the chucking ring up and down in a vertical direction. The supporter forms a sealed space together with the membrane, and the chucking ring chucks the wafer in vacuum.

Abstract: The present invention is a workpiece holder for polishing comprising at least a workpiece holder body having multiple perforated holes for holding a workpiece by vacuum adsorption and a back plate disposed on the back side of the body, which is provided with temperature controlling means or cooling means for the holder body. Thus, there is provided a workpiece holder for polishing, a polishing apparatus and a polishing method, which can provide a workpiece having good flatness by suppressing thermal deformation of the workpiece holder body and deformation of a resin film coated on the workpiece holding surface without degrading flatness of a workpiece held on the workpiece holder in the polishing of the workpiece, even when the number of polishing operation increases.

Abstract: A holder for semiconductor wafers in an apparatus for chemical-mechanical polishing of semiconductor wafers, having a disk-shaped head, a holding plate and a ring-shaped membrane attached to the carrier section and the holding plate which defines a pressure chamber between these components, the bores in the holding plate being connected with the pressure chamber, a contact membrane of elastomeric gas-impermeable material having a peripheral edge which is fixedly connected to a peripheral portion of the holding plate in a gas-tight manner and engages the lower side of the holding plate.

Abstract: An apparatus and method for chemical mechanical polishing in which a substrate is pressed against a polishing pad by a carrier head having a plurality of chambers. A common pressure is applied by the plurality of chambers in the carrier head using a common regulator, but a duration of application of the first pressure to each chamber from the plurality of chambers is controlled independently from other chambers.