Abstract: A polishing method and polishing apparatus capable of improving the flatness of a wafer are provided. When a wafer is adhered to a wafer holding plate for polishing a surface to be polished of the wafer by pressing and rubbing the surface to be polished against a polishing pad on a polishing turn table, the wafer is held by vacuum-chucking the surface to be polished of the wafer such that a surface to be adhered of the wafer forms a convex surface in a vicinity including an arbitrary point in the surface to be adhered within a region surrounding a center of the surface to be adhered of the wafer, and the region being at least not less than 50% of an entire adhesion area; and the wafer is adhered to the wafer holding plate from a central portion of the surface to be adhered of the wafer.

Abstract: A conditioning bar assembly includes a polycarbonate member, an abrasion member, and a rigid metal element. The abrasion member is supported on an outer surface of the polycarbonate member. The rigid metal element is supported on the polycarbonate member, at least a portion of the polycarbonate member disposed between the rigid metal element and at least a portion of the abrasion member.

Abstract: An invention is provided for a carrier head that includes a metal plate having an opening formed in a central location. The metal plate has a wafer side, which faces the backside of a wafer during a CMP operation, and a non-wafer side. Positioned above the non-wafer side of the metal plate, and located above the opening in the metal plate, is a bladder or membrane. To facilitate uniformity during polishing, an inflating pressure is applied to the bladder, or membrane, that is substantially equivalent to a polishing pressure utilized during the CMP operation. To facilitate transporting the wafer, a vacuum can be applied to the opening in the metal plate to adhere the wafer to the carrier head. Further, to release the wafer from the carrier head, the bladder, or membrane, can be inflated such that it protrudes through the opening in the metal plate.

Abstract: Disclosed are apparatus and methods of chemical mechanical polishing a semiconductor wafer to minimize formation of scratches on a surface of a wafer. According to one example, a method of planarizing a pattern of a wafer by rotating the wafer that is fixed to a carrier head, on a polishing pad by pressing the wafer against the polishing pad and injecting slurry onto the polishing pad is disclosed. The method may include performing a first planarization process by injecting the slurry onto the polishing pad and rotating the wafer as the wafer contacts the polishing pad and performing a second planarization process during which the wafer is spaced apart from the polishing pad at a given spacing, wherein air is injected into the polishing pad to produce bubbles in the slurry on the polishing pad while the wafer is rotated.

Abstract: A polishing head with a floating knife-edge mechanism includes a base, a retaining ring secured to the base defining a pocket area beneath the base, and a lower assembly floating within the pocket area via a diaphragm seal. The lower assembly includes a disk-shaped support plate having a plurality of apertures distributed in a center region of the support plate, a clamp ring used to secure the diaphragm seal along a rim region of the support plate, and the floating knife-edge mechanism positioned between the rim region and the center region of the support plate.

Abstract: Disclosed are a method for assembling a polishing while inspecting for air leakage in the polishing head and an apparatus for performing the same. By the present invention, a polishing head may be tested for air leakage at each assembly step thereof, so that the polishing head may be assembled free of air leakage, thereby reducing testing time of the polishing head, and failure of the polishing head due to air leakage may be prevented. The apparatus includes a housing supporting the polishing head and having coupling lines coupled with ends of tubes provided in the assembled polishing head, or the polishing head being assembled. A pneumatic pressure regulating section selectively supplies positive pressure or vacuum to the tubes through the coupling lines. A sensor section detects the pressure and level of vacuum in the tubes. A determining section determines if there is air leakage in the polishing head.

Abstract: CMP systems and methods provide necessary vacuum and pressure to be applied from a vacuum chuck through a carrier film to a wafer without interfering with desired wafer planarization during CMP operations. Prior low polish rate-areas on the wafer may be eliminated from an exposed surface of the wafer by structure to uniformly compress the carrier film in response to a force from the wafer on the carrier film during the CMP operations. A distance between, and diameters of, adjacent holes of the carrier film are reduced, and the locations of the holes are in an array to coordinate with passageways through the vacuum chuck. The structure significantly reduces a maximum value of compression of the carrier film during CMP operations. As a result, during the CMP operations the wafer does not deform in a manner that exactly matches the compression of the carrier film, but remains essentially flat.

Abstract: The present invention relates to a polishing method and apparatus for polishing a workpiece such as a semiconductor wafer to a flat mirror finish. A polishing liquid is supplied onto a polishing cloth attached on a turntable, and a semiconductor wafer to be polished is held by a top ring. The turntable and the top ring are rotated, respectively. A surface, to be polished, of the semiconductor wafer held by the top ring is pressed against the polishing cloth on the turntable to polish the semiconductor wafer. When a polished semiconductor wafer held by the top ring is to be removed from the polishing cloth on the turntable, a relative speed of the turntable and the top ring is increased as compared with a relative speed of the turntable and the top ring at a period of polishing.

Abstract: A polishing head assembly for use in a chemical mechanical planarization apparatus is provided. The polishing head assembly includes a carrier head shaped substantially like a disk having a circumference, a top surface, a bottom surface, and an outer wall, the outer wall having a groove therein, the groove extending into the carrier head from the bottom surface of the carrier head, and the groove running the entire circumference of the carrier head; and a retainer ring having an interior wall and an exterior wall, the interior wall of the retainer ring being in contact with the outer wall of the carrier head, the interior wall having a slot therein, the slot defining a lower portion of the interior wall as a flexible leg, the flexible leg having a receiving end that is adapted to secure an object having a surface to be polished, the slot having a first terminal end adjacent to the groove in the carrier head and a second terminal end, opposite the first terminal end, in the body of the retainer ring.

Abstract: A method and apparatus for the wireless transfer of measurements made during chemical-mechanical planarization of semiconductor wafers with a planarizing machine. The apparatus includes a sensor connected to the semiconductor substrate or a movable portion of the planarizing machine. The apparatus further comprises a display spaced apart from the sensor and a wireless communication link coupled between the sensor and the display to transmit a signal from the sensor to the display. The wireless communication link may include an infrared link, a radio link, an acoustic link, or an inductive link. The sensor may measure force, pressure, temperature, pH, electrical resistance or other planarizing parameters. The sensor may also detect light reflected from a reflective surface of a substrate that is used to calibrate the planarizing machine.

Abstract: A polishing head for polishing the end surface of a semiconductor wafer has a driver roller, a driving motor for rotating it, a pair of upper and lower follower rollers one above the other parallel to and horizontally separated from the driver roller and an endless polishing belt around these rollers. As the driving motor causes the polishing belt to run around the rollers, the semiconductor wafer is pushed against the polishing belt between the upper and lower follower rollers. A pair of upper and lower tension-controlling rollers are provided for controlling the tension in the polishing belt between the two follower rollers. At least one of these tension-controlling rollers is movable vertically. A polisher is formed with such a polishing head, a holder for holding and rotating the wafer and an attaching device for attaching the polishing head to the polisher.

Abstract: The invention shows a workpiece template and a number of additional elements for forming wafers of varying thicknesses=. The template is formed of a main disk including a plurality of cavities extending through a main plate with either a frictionless material or a backing plate forming the cavity base. The template shows additional elements to aid in the lapping/polishing abrasive fluid movement in the form of spiraling channels moving across the top surface of the template. The channels can extend through the template cavity walls. Also shown are the improvement previously stated applied to a template having notched gear-like teeth for another type of lapping/polishing machine.

Abstract: A polishing apparatus comprises a carrier having a pressing surface to be engaged with a platy workpiece to press it against a polishing surface, whereby the workpiece is polished by being subjected to a relative sliding motion relative to the polishing surface while being pressed thereagainst. The pressing surface includes a suction opening provided along an outer peripheral portion of the pressing surface for applying a vacuum to hold the workpiece on the pressing surface during polishing of the workpiece. The carrier further comprises a pressure applying opening provided inside of the suction opening for applying a pressure to press the workpiece against the polishing surface during polishing of the workpiece.

Abstract: A linear polishing apparatus for polishing a semiconductor substrate including a novel polishing belt arrangement with at least two polishing belts forming a continuous loop. Each belt having an outside polishing surface and an inside smooth surface. The belts are spaced alongside each other sharing a common axis at each end. The belts are looped around a pair of rollers making up a driver roller at one end and a driven roller at the other end. A platen member interposes each belt and is placed between the pairs of rollers. The platen provides a polishing plane and supporting surface for the polishing belts. The polishing plane includes a plurality of holes communicating with an elongated plenum chamber underlying the plane. The chamber supplies a compressed gas to impart an upward pressure against the polishing belts. The driver rollers are coupled to separate motors to independently drive and control at least said two of the polishing belts.

Abstract: The invention is an endface polishing method and an endface polishing apparatus improving polishing accuracy of an optical fiber and making polishing time and polishing work shorten. Polishing is performed making a boundary line center axis while observing the boundary line of brightness and darkness formed at outer circumference face of an optical fiber by irradiating substantial parallel light from the predetermined direction crossing at the right angle to the axis of the optical fiber in an endface polishing method polishing a tip end of the optical fiber held by a jig by a polishing member attached at a polishing disk in an apparatus providing the polishing disk supported by a main body of the apparatus and the jig holding the optical fiber.

Abstract: In a polishing apparatus having a cover body with fluid pressing mechanism, during polishing, vibration and migration of sticking portion between a retainer and a membrane generated in downstream of rotation of a polishing platen is prevented by reducing sticking force between the retainer and the membrane to less than force needed to wafer polishing with rotation of the cover body.

Abstract: A chemical mechanical head includes a retaining ring to maintain a substrate beneath the mounting surface during polishing. The retaining ring has a lower portion with a bottom surface for contacting a polishing pad during polishing and made of a first material, such as plastic, and an upper portion made of a second, different material, such as metal.

Abstract: The present invention uses some type of inflatable membrane during processing to establish a vacuum and/or provide a resilient cushion on which the backside of the wafer can rest. In one aspect, the present invention provides an outer vacuum that allow for attachment of the wafer to the carrier head during processing, and also provides an inner inflatable membrane that provides a resilient cushion on which the backside of the wafer can rest during processing. In other aspects, the present invention provides a membrane that is displaceable with a vacuum within certain cavity regions to provide for attachment of the wafer to the wafer carrier.

Abstract: A wafer polishing apparatus for polishing a semiconductor wafer. The polisher comprises a base, a turntable, a polishing pad and a head drive mechanism for driven rotation of a polishing head. The polishing head comprises a sealing ring adapted to hold at least one wafer for engaging a front surface of the wafer with a work surface of the polishing pad. The sealing ring allows for application of uniform air pressure over the rear surface of the wafer. The sealing ring is constructed so that the wafer itself defines a portion of a pressure cavity receiving pressurized air.

Abstract: A carrier head for a chemical mechanical polishing system includes a substrate sensing mechanism. The carrier head includes a base and a flexible member connected to the base to define a chamber. A lower surface of the flexible member provides a substrate receiving surface. The substrate sensing mechanism includes a sensor to measure a pressure in the chamber and generate an output signal representative thereof, and a processor configured to indicate whether the substrate is attached to the substrate receiving surface in response to the output signal.

Abstract: A polishing head and an apparatus for the chemical mechanical polishing (CMP) of a substrate are provided in which a conditioning surface is integrated in or directly coupled to the polishing head so that a simplified structure of the CMP apparatus can be obtained. Furthermore, establishing quite similar pad conditions may be achieved. Preferably, the conditioning surface is integrated into the retaining element of sophisticated CMP apparatuses, thereby allowing the application of an adjustable pressure to the conditioning surface.

Abstract: A substrate holder is described which has a movable plate elastically mounted inside a main body. With the substrate holder, a polishing operation can be performed in two basic operation modes corresponding to two different vertical end positions of the movable plate. In a first (downward) mode the movable plate stays in mechanical contact with the substrate whereas in a second (upward) mode an air cushion is generated in a chamber between the movable plate and the substrate for pressurizing the substrate onto the polishing pad.

Abstract: In the wafer abrasive machine of the present invention, a gravity center and a rotational axis of a wafer can be corresponded while abrading the wafer and a holding plate can be smoothly moved in a head member. The abrasive machine comprises: the head member including a concave section, in which the holding plate is accommodated; an elastic sheet member suspending the holding plate and being reinforced by a cloth-formed reinforcing member; a space for storing pressure fluid which pushes the holding plate toward the abrasive plate, the space being formed between the elastic sheet member and the concave section; and a plurality of spherical bodies being provided between an outer circumferential face of the holding plate and an inner circumferential face of the concave section, the spherical bodies simultaneously point-contact the both circumferential faces.

Abstract: A wafer carrier structure for a chemical-mechanical polishing device. The wafer carrier structure includes a holder and a slurry supply pipeline. The slurry supply pipeline is attached to the side of the holder such that a portion of the supply pipeline near the outlet end is either parallel or perpendicular to the sidewall of the holder.

Abstract: A wafer processing module is provided. In one example, the wafer processing module includes a sub-aperture CMP processing system and a pad exchange system including a pad magazine for storing CMP processing pads and a pad exchange robot for transferring CMP processing pads between the sub-aperture CMP processing system and the pad magazine. The wafer processing module includes a module frame that integrates the sub-aperture CMP processing system including the pad exchange system, with a wafer scrubber unit and a wafer SRD unit.

Abstract: A wafer carrier head assembly for holding a wafer in chemical mechanical planarization applications is dis;losed that includes a downwardly protruding wafer retaining ring that moves independent of the wafer carrier head and retains an edge of the wafer on said polishing surface. An adjustable wafer holding mechanism that applies one of a uniform downward force and a uniform upward force to the wafer is also included. Application of the upward force allows the wafer holding mechanism to retain and transport the wafer to a polishing surface. Application of the downward force allows the wafer holding mechanism to retain the wafer on the polishing surface and allows the wafer to be uniformly polished. The wafer carrier head assembly herein disclosed is also configured to pivotally accommodate changes in parallelism between the wafer and the polishing surface when the wafer is being polished.

Abstract: An apparatus for polishing a wafer comprises a supporting portion having an abrasive pad disposed thereon, and a polishing head disposed over the abrasive pad. The polishing head comprises a carrier having at least two fluid passages, a retainer ring disposed on a lower edge of the carrier, forming a space for receiving the wafer, a supporter disposed in the carrier, and a flexible membrane disposed to be in contact with the wafer. The supporter has an upper surface portion, a lower surface portion, a plurality of first holes, a plurality of second holes, and a first chamber. The upper surface portion of the supporter forms a second chamber along with an inner surface of the carrier. The second chamber is in communication with one of the two fluid passages of the carrier and the second holes are formed in a lower surface portion of the supporter to communicate with the second chamber.

Abstract: The present invention has an object to provide a retention plate used in a polishing device that mirror polishes semiconductor substrates such as silicon wafers, particularly a retention plate used with the hard chuck method, that can prevent roll-off, and can achieve a high improvement in flatness. According to the present invention, by means of using a retention plate of a constitution that is of a smaller diameter than that of the wafer and which gives a region in which the area of contact with the wafer is reduced by means of groove processing, or a porous structure and the like, on the outer peripheral part, a reduction of the processing pressure of the outer peripheral part becomes possible, and, because the polishing of the region in which roll-off occurs is delayed, the amount removed by polishing becomes uniform over the wafer surface, and high precision wafer processing becomes possible.

Abstract: A chuck means for flat workpieces, in particular semi-conductor wafer for the chemical-mechanical polishing, comprising a circular housing which is attached to a driving spindle for rotation therewith and has a top wall and an annular side wall, a retaining ring which forms the lower part of the side wall, a chuck plate of rigid, however elastically deformable material which has an upper and a lower side and a plurality of openings at the lower side as well which openings are in connection with radial and axial parallel passages in the chuck plate, the passages being in fluid connection with an axial passage in the spindle, the axial passage being connected to a vacuum and/or fluid source, the chuck plate being floatingly and vertically movably located in the housing, a plurality of pressure chambers above the chuck plate, the pressure chambers having lower wall portions which are yieldable and engage the upper side of the chuck plate, pressure manifold means which are connected with a fluid source under pres

Abstract: An apparatus and method for planarizing a substrate are provided. The apparatus (101) includes a subcarrier (354) having an outer surface (378) with an annular first membrane (376) coupled thereto. The first membrane (376) has a receiving surface (380) adapted to receive the substrate (356) thereon, and a lip (382) adapted to seal with a backside of the substrate to define a first chamber (384) therebetween. A second membrane (386) positioned above the first membrane (376), and coupled to the subcarrier (354) defines a second chamber (388). During a polishing operation pressurized fluid introduced into the second chamber (388) causes it to expand outward to exert a force on a portion of the backside of the substrate (356), thereby pressing a predetermined area (392) of the surface of the substrate against the polishing pad. The predetermined area (392) is directly proportional to the pressure of the fluid introduced into the second chamber (388).

Abstract: An apparatus and method are disclosed for planarizing a wafer in a carrier with adjustable pressure zones and adjustable barriers between zones. The carrier has an independently controlled central zone and concentric surrounding zones for distributing the pressure on the backside of a wafer while the wafer is being pressed against an abrasive surface in a chemical-mechanical polishing tool. The pressure zones may be created by mounting an elastic web diaphragm to a carrier housing that has a plurality of recesses. A corresponding plurality of elastic ring shaped ribs may extend from the web diaphragm opposite the recesses. The plurality of ring shaped ribs thereby defines a central zone surrounded by one or more concentric surrounding zones. The zones and barriers may be individually pressurized by utilizing corresponding fluid communication paths during the planarization process.

Abstract: A method and apparatus for the wireless transfer of measurements made during chemical-mechanical planarization of semiconductor wafers with a planarizing machine. The apparatus includes a sensor connected to the semiconductor substrate or a movable portion of the planarizing machine. The apparatus further comprises a display spaced apart from the sensor and a wireless communication link coupled between the sensor and the display to transmit a signal from the sensor to the display. The wireless communication link may include an infrared link, a radio link, an acoustic link, or an inductive link. The sensor may measure force, pressure, temperature, pH, electrical resistance or other planarizing parameters. The sensor may also detect light reflected from a reflective surface of a substrate that is used to calibrate the planarizing machine.

Abstract: A method and apparatus for forming wafers of varying thickness'. The apparatus includes a template. The template is formed of a main disk including a plurality of cavities extending into a first side thereof and a backing plate positioned on a side of the main disk opposite the first side. Holding disks are moistened and positioned within respective cavities for releasably securing a wafer in the cavity. When the template is releasably secured to and rotatable with a rotating head and positioned such that the first side faces a lapping and polishing surface, wafers received by the cavities are lapped and polished upon rotation of the rotating head. A plurality of shims are selectively received within respective cavities between a base of the cavity and the holding disk for adjusting a depth of the cavity thereby adjusting an amount of a wafer to be lapped and polished. The shims have varying thickness' and are color coated, each color being representative of a predetermined thickness for the shim.

Abstract: A polishing head and an apparatus for the chemical mechanical polishing (CMP) of a substrate are provided in which a conditioning surface is integrated in or directly coupled to the polishing head so that a simplified structure of the CMP apparatus can be obtained. Furthermore, establishing quite similar pad conditions may be achieved. Preferably, the conditioning surface is integrated into the retaining element of sophisticated CMP apparatuses, thereby allowing the application of an adjustable pressure to the conditioning surface.

Abstract: A membrane for vacuum suction of a silicon water typically used inside a polishing head. The membrane has a flat main body and a plurality of protrusions each having a particle-like profile over the surface of the flat main body. The protrusions are formed in positions that correspond to the holes of a supporting multiple-hole panel. The protrusions on the flat main body lower the suction pressure between the wafer and the membrane somewhat so that wafer unloading failure is minimized.

Abstract: A carrier head for a chemical mechanical polishing system includes a substrate sensing mechanism. The carrier head includes a base and a flexible member connected to the base to define a chamber. A lower surface of the flexible member provides a substrate receiving surface. The substrate sensing mechanism includes a sensor to measure a pressure in the chamber and generate an output signal representative thereof, and a processor configured to indicate whether the substrate is attached to the substrate receiving surface in response to the output signal.

Abstract: Generally, a method and apparatus for retaining polishing material is provided. In one embodiment, the apparatus includes a platen having a top surface, a plurality of channels and one or more vacuum ports. The top surface is adapted to support the polishing material. The plurality of channels are formed in a polishing area of the top surface. The vacuum ports are disposed in the platen and at least one port is in communication with at least one of the channels. Upon application of a vacuum to the ports, the channels remove fluids under the polishing material while securing the polishing material to the top surface.

Abstract: A carrier head for chemical mechanical polishing of a substrate includes a base and a flexible membrane extending beneath the base to define a chamber. The flexible membrane has a core of a first material and an outer layer of a second material having a lower adhesion to the substrate than the first material. An exposed surface of the outer layer provides a mounting surface for the substrate.

Abstract: CMP systems and methods provide necessary vacuum and pressure to be applied from a vacuum chuck through a carrier film to a wafer without interfering with desired wafer planarization during CMP operations. Prior low polish rate-areas on the wafer may be eliminated from an exposed surface of the wafer by structure to uniformly compress the carrier film in response to a force from the wafer on the carrier film during the CMP operations. A distance between, and diameters of, adjacent holes of the carrier film are reduced, and the locations of the holes are in an array to coordinate with passageways through the vacuum chuck. The structure significantly reduces a maximum value of compression of the carrier film during CMIP operations. As a result, during the CMP operations the wafer does not deform in a manner that exactly matches the compression of the carrier film, but remains essentially flat.

Abstract: A method for controlling a process in a multi-zonal processing apparatus and specifically for determining the optimum values to set for processing parameters J(Zi) in each of the zones of that apparatus includes processing a test work piece in the apparatus with initial values Jl(Zi) of the parameters in each zone i to achieve a process result Ql(x). Then a process result Qf(x) to be expected from incremental changes in the parameters to values Jf(x) is calculated. The expected process results Qf(x) are related to the initial process results Ql(x) by the relationship: Qf(x)=Ql(x)*Jf(x)/Jl(x). After determining optimum values of J(Zi) to reduce the difference between the expected process result and a target process result, a work piece is processed through the process apparatus using those optimum values of J(Zi).

Abstract: A polishing apparatus is used for polishing a surface of a workpiece such as a semiconductor wafer or a glass substrate. The polishing apparatus comprises a polishing table having a polishing surface thereon, a plurality of workpiece holders each for holding a workpiece and pressing the workpiece against the polishing surface, and a controller for controlling the workpiece holders individually so that polishing operations of the workpiece holders are controlled independently of each other.

Abstract: The invention is a carrier that determines if a wafer has been properly loaded. The carrier includes a body having a cavity covered by a membrane, thereby forming an initial plenum. One or more annular ribs may extend from the body to the membrane to divide the initial plenum into a plurality of plenums. A sensor is positioned within one of the plenums to detect the presence of the wafer. Pump(s) with pressure regulators may be used to pressurize the plenum(s). A first plenum may be pressurized sufficient to hold the wafer to the membrane by creating a partial vacuum between the membrane and the wafer. A second plenum may be pressurized sufficient to urge the membrane away from the sensor if the wafer is not properly loaded in the carrier. If the membrane is near the sensor, the wafer has been properly loaded into the carrier.

Abstract: A carrier with adjustable pressure zones and adjustable barriers between zones for distributing the pressure on the backside of a wafer. The pressure zones may be created using an elastic web diaphragm. One or more grooves are formed in the surface of the diaphragm to relieve vacuum formed between the diaphragm and wafer.

Abstract: A carrier head for a chemical mechanical polishing system includes a flexible membrane with a substrate receiving surface, a sensor mechanism to determine if a substrate is properly attached to the carrier head, and means for preventing fluid that may be located between the substrate and the flexible membrane from interfering with the substrate detection mechanism.

Abstract: A wafer polishing apparatus for polishing a semiconductor wafer. The polisher comprises a base, a turntable, a polishing pad and a head drive mechanism for driven rotation of a polishing head. The polishing head comprises a sealing ring adapted to hold at least one wafer for engaging a front surface of the wafer with a work surface of the polishing pad. The sealing ring allows for application of uniform air pressure over the rear surface of the wafer. The sealing ring is constructed so that the wafer itself defines a portion of a pressure cavity receiving pressurized air.

Abstract: The present invention provides a composite polishing pad, comprising. In an advantageous embodiment, the composite polishing pad includes a polishing pad member comprising a material having a predetermined hardness and an annular support member underlying a periphery of the polishing pad member, the annular support member having a hardness less than the predetermined hardness of the polishing pad member.

Abstract: A method and apparatus for the wireless transfer of measurements made during chemical-mechanical planarization of semiconductor wafers with a planarizing machine. The apparatus includes a sensor connected to the semiconductor substrate or a movable portion of the planarizing machine. The apparatus further comprises a display spaced apart from the sensor and a wireless communication link coupled between the sensor and the display to transmit a signal from the sensor to the display. The wireless communication link may include an infrared link, a radio link, an acoustic link, or an inductive link. The sensor may measure force, pressure, temperature, pH, electrical resistance or other planarizing parameters. The sensor may also detect light reflected from a reflective surface of a substrate that is used to calibrate the planarizing machine.

Abstract: A multi-channel rotary joint including a first joint structural member rotatably linked to a second joint structural member. Sealing regions defined and formed by mechanical seals that are lined up concentrically around relative rotational axis are provided between opposing peripheral surfaces in a relative rotational axial direction of the first and second joint structural members. A plurality of channels passing independently through the sealing regions (except for the sealing region which is used as a drain region) are provided for the first and second joint structural members, and an electrical wire insertion path is provided so as to pass through the inner peripheral region of a mechanical seal that has the smallest diameter. A drain path that opens into the drain region is provided for the joint structural member.

Abstract: A polishing apparatus (100) and method for polishing and planarizing a substrate (105) is provided that achieves a high-planarization uniformity across the substrate, while providing a more efficient use of slurry. In one embodiment, the apparatus (100) includes a subcarrier (160) with a flexible member (185) attached to a lower surface (165) of it on which the substrate is held. The flexible member (185) has at least one hole (195) therein so that a pressurized fluid introduced between the flexible member and the subcarrier (160) directly presses the substrate (105) against a polishing surface (125) during operation. The number and size of the holes (195) are selected to provide sufficient friction between the flexible member (185) and the substrate (105) to cause it to rotate when a drive mechanism rotates the subcarrier (160).

Abstract: The polishing pad for a chemical mechanical polishing apparatus and method of making the same has a polishing pad with a bottom layer, a polishing surface on a top layer and a transparent sheet of material interposed between the two layers. Slurry from the chemical mechanical polishing process is prevented from penetrating the impermeable transparent sheet to the bottom layer of the polishing pad.