Abstract: The present invention relates to a polishing apparatus for polishing a workpiece such as a semiconductor wafer. The polishing apparatus has a processing section including a polishing section (1) for polishing a semiconductor wafer (6) and a cleaning section (10) for cleaning a polished semiconductor wafer, a receiving section (40) for supplying a semiconductor wafer (6) to be polished to the processing section and receiving a polished semiconductor wafer (6), and a cleaning chamber (20) disposed between the processing section and the receiving section and defined by partitions (102, 103) with shutters (22, 24) which separate the processing section and the receiving section from each other.

Abstract: A wafer polishing head utilizes a wafer backing member having a wafer facing pocket which is sealed against the wafer and is pressurized with air or other fluid to provide a uniform force distribution pattern across the width of the wafer inside an edge seal feature at the perimeter of the wafer to urge (or press) the wafer uniformly toward a polishing pad. Wafer polishing is carried out uniformly without variations in the amount of wafer material across the usable area of the wafer. A frictional force between the seal feature of the backing member and the surface of the wafer transfers rotational movement of the head to the wafer during polishing. A pressure controlled bellows supports and presses the wafer backing member toward the polishing pad and accommodates any dimensional variation between the polishing head and the polishing pad as the polishing head is moved relative to the polishing pad.

Abstract: The present invention provides a polishing compound which does not make stain grow on the surface of work-piece comprising, the dispersion containing 1-30 wt. % of metal oxide particles having 8-500 nm average diameter, acid or alkali and salt, and whose pH is 7-12. Desirably said polishing compound is the compound in which water soluble organic solvent is contained. Further, present invention provides edge polishing method and surface polishing method by use of said polishing compound.

Abstract: A polishing pad for semiconductor wafers having a polishing surface surrounding at least one wafer non-contact region and a method for disengaging a wafer with the polishing pad is disclosed. The wafer non-contact region(s) are located and dimensioned to provide a location for positioning the wafer prior to disengagement, thereby reducing the cohesion force of the slurry resisting the force used for lifting the wafer from the plane of the polishing pad surface. The invention provides safe disengagement of the wafer with the polishing pad, and is especially useful for polishing apparatus employing vacuum retaining means for holding the wafer.

Abstract: Devices and methods for releasably attaching substrate assemblies to carrier heads of planarizing machines in mechanical and/or chemical-mechanical planarization of microelectronic-device substrate assemblies. One aspect of the invention is directed toward a backing member for use in a carrier head to selectively couple a substrate assembly to the carrier head via a vacuum force before, during and after planarizing the substrate assembly. The backing member can include a body having a first section with a first surface configured to be received by the carrier head and a second section with a second surface configured to support a backside of the substrate assembly. The first and second sections of the body are preferably composed of flexible, incompressible materials. The backing member also includes a first vacuum passageway extending through the body and a plurality of second vacuum passageways coupled to the first passageway.

Abstract: A round groove is formed at the center of a wafer sucking face of a wafer suction pad. A plurality of annular grooves are formed on the wafer sucking face concentrically with the round groove. Each of the grooves is connected with an air intake line. Each of the air intake lines is connected with an air sucking device via a valve. Intake of the air is controlled by opening and closing of each of the valves. When holding the wafer by suction, the air is sucked only from the groove or grooves located inside the outer diameter of the held wafer. Therefore, the entire face of each of wafers of various sizes can be appropriately held by one wafer suction pad.

Abstract: Apparatus and method of polishing substrates using a carrier that does not contact the backside of the substrate during polishing. The apparatus preferably forms an air bearing between the substrate and the carrier plate during polishing. Alternatively, liquids, or combinations of liquids and gases may be used to form the bearing layer. When a water layer is formed, at least a portion of the carrier plate is formed as a microporous force applicator. The apparatuses are also capable of adjusting the force profile that is applied to the substrate so as to differentially polish different areas of the substrate. A containment ring is provided for horizontal containment of the substrate during polishing and to define an area within which the substrate precesses during polishing. A containment ring or barrier is also provided for precessing with a substrate during polishing.

Abstract: A method for off-line testing a polishing head used in a CMP polishing apparatus is disclosed. The method utilizes at least two sets of pressurizing/vacuuming/venting devices for the independent testing of at least two fluid chambers which may include a membrane chamber, a retaining ring chamber and an innertube chamber normally found in a CMP polishing head. The present invention further discloses an off-line testing apparatus for a chemical mechanical polishing head which includes at least two independent sets of pressurizing/vacuuming/venting devices for testing a CMP head that is equipped with at least two fluid chambers such as a membrane chamber, a retaining ring chamber and an innertube chamber. The method and apparatus can be used advantageously for testing a variety of defects in a CMP polishing head prior to the installation of the head into a CMP apparatus. The defects include leakage between the fluid chambers, loss of vacuum seal in the fluid chambers, and binding between the fluid chambers.

Abstract: A chuck is provided for holding a semiconductor wafer using a suction force. The chuck includes a chuck plate and may further include a manifold plate, and a seal plate to form a laminated chuck configuration. The chuck plate is disposed about a first axis and includes a first contact region disposed on a first side. The chuck plate further includes a first groove within the first contact region extending generally spirally outwardly from a first location proximate to the first axis to a second location within the first contact region. The chuck plate further includes a first plurality of vacuum holes extending from the first groove into the first side of the chuck plate. A method is provided for a probing a test pad on a semiconductor die disposed on a semiconductor wafer and removing an oxide layer disposed on the test pad. A probe needle contacts the test pad and is overdriven less than or equal to 1 micron into the test pad.

Abstract: A surface machining apparatus comprises a suction transfer device that is capable of transferring a ground thin wafer held thereon without damaging it. After the wafer is ground at two different grinding stages, the suction transfer device transfers the wafer from a chuck table to a cleaning stage. A holding surface of a suction disc in the suction transfer device is composed of a porous member having substantially the same diameter as the wafer, so that the entire surface of the wafer can be held on the holding surface of the suction disc.

Abstract: A carrier head for a chemical mechanical polishing system includes a substrate sensing mechanism. The carrier head includes a base and a flexible member connected to the base to define a chamber. A lower surface of the flexible member provides a substrate receiving surface. The substrate sensing mechanism includes a sensor to measure a pressure in the chamber and generate an output signal representative thereof, and a processor configured to indicate whether the substrate is attached to the substrate receiving surface in response to the output signal.

Abstract: A chemical mechanical polishing apparatus includes a rotatable carousel and multiple carrier head assemblies coupled to the carousel. Each carrier head assembly includes multiple carrier heads each of which can hold a single substrate. The apparatus includes multiple substrate processing stations separated from one another in substantially equal angular intervals. The carrier head assemblies can be positioned in angular alignment with the stations and can be rotated from one station to another station. At least one polishing station includes a fixed abrasive sheet and a fluid bearing surface that provides an upward pressure against the lower surface of the polishing sheet. The carrier head assembly is positioned so that the substrates are in angular alignment with the fluid bearing disposed below the polishing sheet, and the substrates are brought into contact with the polishing sheet.

Abstract: A polishing apparatus is used for polishing a workpiece such as a semiconductor wafer to a flat mirror finish. The polishing apparatus has a pusher for transferring the workpiece between a top ring of a polishing apparatus and the pusher. The polishing apparatus includes a turntable having a polishing surface, a top ring for supporting the workpiece to be polished and pressing the workpiece against the polishing surface, and a pusher for transferring the workpiece between the top ring and the pusher. The pusher comprises a workpiece support for supporting the workpiece, an actuating unit for moving the workpiece support in a vertical direction, a sliding mechanism movable within a horizontal plane, and a positioning mechanism for positioning the workpiece support and the top ring with respect to each other in association with the sliding mechanism when the workpiece is transferred between the workpiece support and the top ring.

Abstract: An apparatus for removing material from a substrate including a plurality of polishing cells. A first polishing cell detects the material on the substrate and performs a first polishing operation for removing material from the substrate. The first polishing cell includes at least one sensor for characterizing the material on the substrate and at least one polishing tool for removing material from the substrate. A second polishing cell includes at least one polishing tool for completing the polishing process.

Abstract: A carrier head for a chemical mechanical polishing apparatus includes a flexible membrane with an expandable lip portion to engage a substrate for improved chemical mechanical polishing. The lip portion can form or break a seal with the substrate in response to pressure changes in a chamber in the carrier head.

Abstract: A carrier comprising a disk-shaped body portion having fluid circulation holes, a ring-shaped diaphragm portion expanding outward from the outer peripheral surface of the body portion and having pliability, a ring-shaped edge portion projecting at least downward from an outer edge portion of the diaphragm portion and having an inner diameter of at least an outer diameter of a work piece, a pliable sheet having an outer peripheral portion affixed air tightly to a bottom end portion of said edge portion, the back surface of the sheet defining a single pressure chamber communicating with the fluid circulation holes, and a ring-shaped member surrounding the work piece affixed to the bottom surface of the sheet.

Abstract: A polishing head for a chemical mechanical polishing (CMP) apparatus. The polishing head includes a backplate, a retaining ring supported by the backplate, and a bladder member encircled by the retaining ring. The backplate of the polishing head comprises a driving plate biasedly coupled to a subcarrier by a bellows. The polishing head may further include a lift plate disposed on the subcarrier and beneath the bladder member. A method for polishing a substrate includes placing a substrate on the bladder member and positioning the substrate against a polishing pad such that the bladder member applies a selected pressure profile on the substrate.

Abstract: A carrier head for a chemical mechanical polishing apparatus includes a flexible membrane with a lip portion to engage a substrate to form a seal for improved vacuum-chucking.

Abstract: Microelectronic substrate polishing systems and methods of polishing microelectronic substrates are described. In one embodiment, a substrate carrier includes a resilient member and a vacuum mechanism. The vacuum mechanism is coupled to the substrate carrier and configured to develop pressure sufficient to draw a portion of the resilient member toward the substrate carrier. The drawing of the resilient member effects an engagement between the resilient member and a substrate which is received by the substrate carrier. A polishing fluid sensor is provided and coupled intermediate the resilient member and the vacuum mechanism. In another embodiment, the polishing fluid sensor is coupled intermediate the substrate carrier and the vacuum mechanism. In another embodiment, the vacuum mechanism comprises a vacuum conduit through which a vacuum is developed. The polishing fluid sensor can be mounted on or in the vacuum conduit.

Abstract: An apparatus and method for uniformly planarizing a surface of a semiconductor wafer and accurately stopping CMP processing at a desired endpoint. In one embodiment, a planarizing machine has a platen mounted to a support structure, an underpad attached to the platen, a polishing pad attached to the underpad, and a wafer carrier assembly. The wafer carrier assembly has a chuck with a mounting cavity in which the wafer may be mounted, and the wafer carrier assembly moves the chuck to engage a front face of the wafer with the planarizing surface of the polishing pad. The chuck and/or the platen moves with respect to the other to impart relative motion between the wafer and the polishing pad. The planarizing machine also includes a pressure sensor positioned to measure the pressure at an area of the wafer as the platen and the chuck move with respect to each other and while the wafer engages the planarizing surface of the polishing pad.

Abstract: A compact polishing apparatus has been developed which can be installed in a relatively small space, and is highly rigid without increasing the weight of the apparatus. The polishing apparatus comprises a polishing table, a top ring head for rotatably holding a substrate, a substrate transfer device for transferring the substrate to and from a substrate storage section, a substrate delivery device for delivery of the substrate between the top ring head and the substrate transfer device at a delivery position outside of the polishing table. A guide rail device is laid between the polishing table and the substrate delivery device, and a carriage device movable along the guide rail device is provided for carrying the top ring device thereon.

Abstract: An apparatus and a method for controlling a polishing profile on a substrate during a polishing process are disclosed. In the apparatus for controlling the polishing profile on a silicon wafer during a CMP process, an elastic plate that has sufficient rigidity is used as a backing plate for a wafer to be polished. By deforming the elastic plate with a contour adjusting device, the curvature of the substrate to be polished can be changed from being convex to being concave, or vice versa. The present invention novel apparatus and method therefore allows the achievement of a more uniform thickness profile after a polishing process. The present invention novel method and apparatus farther allows an in-situ control of the curvature of a elastic plate during polishing and thus a specific thickness profile on the substrate surface.

Abstract: A semi-conductor wafer polishing head includes three air lines for controlling three respective head functions, and an air control system providing precise head control and functional checking of each head sub-system, including air line pressure checking and chamber leak rate testing. The control system includes electrically operated valves for selectively coupling air chambers in the head with either a source of pressurized air, a source of negative air pressure, or a vent to atmosphere. A pair of air gauges are employed to check chamber leak rate respectively during positive and negative air pressure tests.

Abstract: An apparatus, and particularly, a wafer carrier for polishing the face of a semiconductor wafer are provided. The wafer carrier forms a first cavity which can be pressure controlled to vary the shape of a face of a platen which contacts the wafer during polishing. A second cavity within the first cavity is provided. The second cavity can be independently pressure controlled to form a vacuum for holding the wafer against the platen surface or for forming a pressure stream to separate the wafer from the platen and/or to purge the holes in the surface of the platen. A non-contact displacement sensor capable of measuring a distance between the wafer carrier mount and the platen, may be provided. An endpoint detector capable of detecting a relative surface roughness of the wafer, to determine when the wafer has been sufficiently polished, may also be provided. A ring is peripherally located about an outer edge of the platen, and is mounted and positioned to resist lateral forces on the wafer during polishing.

Abstract: A carrier and polishing apparatus enabling high precision polishing of a workpiece and enabling prevention of leak contamination and damage to the workpiece. A carrier 1 is provided with a carrier body 2, a pressure chamber 3, and a fluid passage portion 4 and a plurality of valve portions 5 are specially provided in the pressure chamber 3. Due to this, when the inside of the pressure chamber 3 becomes a negative pressure state, the valve portions 5 open and the wafer W is picked up by suction, while when it becomes a positive pressure state, the valve portions 5 close and the air in the pressure chamber 3 uniformly presses against the wafer W. Further, since the valve portions 5 close in the positive pressure state, the air in the pressure chamber 3 will not flow to the outside.

Abstract: A polishing apparatus for polishing a workpiece such as a semiconductor wafer includes a polishing section for polishing a surface of the workpiece held by the top ring, and a cleaning section for cleaning the workpiece which has been polished in the polishing section. The polishing apparatus further includes a workpiece transfer robot for transferring the workpiece to be polished to the polishing section or the workpiece which has been polished in the cleaning section. The workpiece transfer robot has a robot body, at least one arm operatively coupled to the robot body by at least one joint, a holder mechanism mounted on the: arm for holding a workpiece, and a sealing mechanism provided at the joint for preventing liquid from entering an interior of the joint.

Abstract: A stage is provided with pressing holes arranged circumferentially and suctioning holes arranged circumferentially to be close to the outer peripheral edge side compared to the pressing holes. A cavity connected to these pressing holes and suctioning holes is provided within a wafer holder. In addition, first filters, which allow a gas to flow from the cavity side to the wafer holding surface side, are arranged between the pressing holes and the cavity. Second filters, which allow a gas to flow only from the wafer holding surface side to the cavity side, are arranged between the suctioning holes and the cavity.

Abstract: The present disclosure relates to a polishing pad including a pad structure having at least first and second polishing regions defined along a polishing surface of the pad structure. The first polishing region of the pad structure is less compressible than the second polishing region of the pad structure. The present disclosure also relates to a polish platen including a platen structure having at least first and second regions adapted for supporting a polishing pad. The first region of the platen structure is less compressible than the second region of the platen structure.

Abstract: A wafer storage and wafer transfer system adjunct to a multi-station chemical mechanical polishing system. Multiple wafers are brought to the system stored in a cassette. A claw member attached to an overhead arm picks up the cassette and deposits it in a water-filled tub next to the polishing system, thereby submerging the wafers in the water with a generally vertical orientation. A blade member attached to the same arm has a recess formed in its surface connected to a vacuum generator powered by positive fluid pressure to thereby selectively apply a vacuum to the recess to vacuum chuck a wafer. The blade member vacuum chucks a wafer under the water, picks it out of the water, and deposits it on a pedestal in polishing system. One of several wafer heads on a rotating carousel picks up the wafer from the pedestal and carries it to one or more of the polishing stations for polishing. After completion of polishing, the wafer head redeposits the wafer on the pedestal.

Abstract: The first air guide groove is formed at the bottom of a carrier along the inner circumference of a circle whose radius corresponds to the maximum radius of a wafer. The air is supplied to the outer periphery of the wafer through the first air guide groove to form a pressure air layer between the carrier and the wafer. The formation of the pressure air layer makes the air pressure applied to the wafer uniform on the entire surface of the wafer, and thus, the wafer can be polished under a uniform pressure force. The second air guide groove is formed along the inner circumference of a circle whose radius corresponds to the minimum radius of the wafer, and therefore, the wafer with an orientation flat or notch can be polished under a uniform pressure force.

Abstract: A wafer polisher head drive includes a head drive housing; a head portion extending from the housing for mounting an unpolished wafer when the head drive housing and head portion are in a horizontal orientation; a pivot mechanism extending from the head drive housing for pivoting the head drive housing and the head portion from the horizontal orientation to a vertical orientation juxtaposed to a transverse vertical portion of a continuous rotating polishing belt; a drive in the housing for moving the head portion and a mounted wafer outwardly from the housing against the transverse vertical portion of the rotating polishing belt; and a drive in the housing for rotating the head portion and the mounted wafer. The head drive housing may be pivoted from the vertical orientation in a sweeping arc extending perpendicularly from the belt transverse vertical portion or in a swinging arc extending parallel from the belt transverse vertical portion.

Abstract: A carrier head for a semiconductor wafer polishing apparatus includes a rigid plate which has a major surface with a plurality of open fluid channels. A flexible wafer carrier membrane has a perforated wafer contact section for contacting the semiconductor wafer, and a bellows extending around the wafer contact section. A retaining member is secured to the rigid plate with a flange on the bellows sandwiched between the plate's major surface and the retaining ring, thereby defining a cavity between the wafer carrier membrane and the rigid plate. A fluid conduit is coupled to the rigid plate allowing a source of vacuum and a source of pressurized fluid alternately to be connected to the cavity. An additional wafer carrier membrane is internally located with respect to the cavity formed by the wafer carrier membrane, and forms another cavity with respect to the rigid plate.

Abstract: A chemical mechanical polish apparatus (FIG. 3B) for planarizing a semiconductor wafer (31) is disclosed. The apparatus includes a polishing pad (21) and a polishing head (32). The polishing pad includes a surface for polishing the semiconductor wafer. The surface has a hole (20). The polishing head is cooperatively engaged with the polishing pad. The polishing head holds the semiconductor wafer and applies it against the polishing pad. Both the polishing head and the polishing pad are rotatable.

Abstract: A surface grinding method for a thin-plate workpiece is provided including the steps of (a) roughly surface grinding a first surface of a thin-plate workpiece using a thin-plate workpiece surface grinding device to create a reference plane having no sori or waviness; (b) inverting the thin-plate workpiece, the first surface of which has been roughly surface ground and, with a surface grinding device having a hard chucking plate, chucking the first surface to the hard chucking plate to roughly surface grind a second surface of the thin-plate workpiece; (c) chucking to the hard chucking plate the first surface of the thin-plate workpiece, the second surface of which has been roughly surface ground with the surface grinding device having the hard chucking plate to further finely surface grind the second surface of the thin-plate workpiece; and (d) inverting the thin-plate workpiece, the second surface of which has been finely surface ground and, with the surface grinding device having the hard chucking plate, ch

Abstract: A wafer is polished while it is pressed against a polishing cloth through a pressure air layer, and a polished surface adjustment ring as well as the wafer are pressed against the polishing cloth. The wafer is polished in the state wherein a collapsing position of the polished surface adjustment ring with respect to the polishing cloth is set in such a way that the polishing pressure which is applied from the polishing cloth to the wafer can be constant.

Abstract: A wafer polishing head utilizes a wafer backing member having a wafer facing pocket which is sealed against the wafer and is pressurized with air or other fluid to provide a uniform force distribution pattern across the width of the wafer inside an edge seal feature at the perimeter of the wafer to urge (or press) the wafer uniformly toward a polishing pad. Wafer polishing is carried out uniformly without variations in the amount of wafer material across the usable area of the wafer. A frictional force between the seal feature of the backing member and the surface of the wafer transfers rotational movement of the head to the wafer during polishing. A pressure controlled bellows supports and presses the wafer backing member toward the polishing pad and accommodates any dimensional variation between the polishing head and the polishing pad as the polishing head is moved relative to the polishing pad.

Abstract: The present invention, in one embodiment, provides a method for eliminating agglomerate particles in a polishing slurry. In this particular embodiment, the method includes transferring a slurry that has a design particle size from a slurry source to an energy source. In many instances, the slurry forms an agglomerate that has an agglomerated particle size, which is substantially larger than the design particle size. This larger particle size is highly undesirable because it can damage the semiconductor wafer surface as it is polished. The method further includes subjecting the agglomerate to energy, such as an ultra sonic wave emanating from the energy source, and transferring energy from the energy source to the slurry to reduce the agglomerated particle size to substantially the design particle size.

Abstract: A carrier for semiconductor wafers to be polished comprises a rigid upper housing, a rigid pressure plate and a gimbal mechanism connecting the plate and housing which permits the plate to gimbal or wobble relative to the housing. The pressure plate is a one-piece component and has a central cut-out portion in which the gimbal mechanism is disposed, thereby establishing a low gimbal point and reducing the incidence of tilting. The gimbal mechanism has an inner bearing ring which is fastened to the underside of the housing, and an outer bearing ring which is fastened to an outer portion of the pressure plate.

Abstract: A method is for the polishing of semiconductor wafers, which are mounted on a front side of a support plate and one side face of which is pressed anst a polishing plate, which is covered with a polishing cloth, with a specific polishing pressure and polished. A device is provided which is suitable for carrying out the method. The method includes a) applying a specific pressure to at least one of a plurality of pressure chambers prior to the polishing of the semiconductor wafers, and b) during the polishing of the semiconductor wafers, transmitting the polishing pressure to a rear side of the support plate via elastic bearing surfaces of the pressure chambers to which pressure has been applied.

Abstract: A tool is provided for polishing, planarizing, cleaning or otherwise processing silicon wafers or other workpieces. It comprises a cylindrical roller mounted on a spindle above a platform or workstation on which a wafer is mounted. The roller is movable into and out of contact with the wafer, and is rotatable to polish the wafer. The wafer may also be rotatable and translatable on the platform. The roller has a linear region of contact with the wafer during processing operations.

Abstract: A method and apparatus for planarizing silicon wafers initially having wavy surfaces, such as might result from having been cut from a boule by means of a wire saw. A vacuum is applied to one side of a porous ceramic plate, and a perforated resilient pad is applied to the opposite side of the porous ceramic plate. The resilient pad is affixed to the ceramic plate by a peelable adhesive, and the vacuum extends through the perforations of the resilient pad to permit a wafer to be mounted on the exposed side of the resilient pad. The perforations in the resilient pad are distributed uniformally across the wafer, so that the atmospheric pressure pushing the wafer against the resilient pad is also uniform across the wafer. However, the wafer is not deformed while it is held in place for grinding. Because the wafer is not held in an elastically deformed condition while it is ground, the wafer has no tendency to spring back to its original wavy shape.

Abstract: A substrate holder assembly for retaining a substrate during chemical mechanical polishing is described. The substrate holder assembly includes: (i) a backing plate including a contact surface adapted for supporting components of the substrate holder assembly and the substrate; (ii) a shim positioned adjacent the contact surface of the backing plate for applying pressure on the substrate during chemical-mechanical polishing; and (iii) a carrier film disposed adjacent the shim such that at least a portion of the carrier film adjacent the shim protrudes outwardly.

Abstract: A carrier head for a chemical mechanical polishing system includes a substrate sensing mechanism. The carrier head includes a base and a flexible member connected to the base to define a chamber. A lower surface of the flexible member provides a substrate receiving surface. The substrate sensing mechanism includes a sensor to measure a pressure in the chamber and generate an output signal representative thereof, and a processor configured to indicate whether the substrate is attached to the substrate receiving surface in response to the output signal.

Abstract: A polishing apparatus including a plurality of polishing pads on respective rotating platens. The polishing platens, and therefore the attached pads also, may be of substantially different diameters. Multiple wafer heads can simultaneously polish multiple wafers on the multiple polishing pads or at different positions on one of the pads. The wafer heads are suspended from a rotatable carousel, which provides positioning of the heads relative to the polishing surfaces. Additionally, a loading/unloading station is provided. The carousel selectively positions the heads on the polishing surfaces, or positions one of the heads over the loading/unloading station while the remaining heads are located over polishing stations for substrate polishing, at which positions the wafers can be polished. The carousel can rotate to sweep all wafer heads attached thereto over respective polishing pads that they overlie.

Abstract: A conditioner apparatus uses one or more linear conditioners. The linear conditioners extend from the edge of the polishing pad almost to the center of the pad. The conditioner apparatus may use two conditioner rods located on either side of a radial segment. The rods gimbal so that if one rod rises, the other rod is forced downwardly. In addition, the rods can pivot independently about a lateral axis, but they cannot pivot around the vertical axis. The linear conditioners may be actuated by a piezoelectric member or swept by an arm toward and away from the center of the polishing pad.

Abstract: There is disclosed a wafer holding jig having a porous holding surface for vacuum-holding a semiconductor wafer while the wafer is ground or polished. The porosity of a center region of the holding surface is made larger than that of an outside region formed to surround the center region. The outer diameter of the center region is made less than that of the wafer, while the outer diameter of the outside region is made greater than that of the wafer. It is possible to prevent deterioration in machining accuracy, which deterioration would otherwise occur due to deformation of a wafer stemming from catch of dust or the like, or application of machining pressure to the wafer.

Abstract: A polishing apparatus is used for polishing a workpiece such as a semiconductor wafer to a flat mirror finish. The polishing apparatus has a pusher for transferring the workpiece between a top ring of a polishing apparatus and the pusher. The polishing apparatus includes a turntable having a polishing surface, a top ring for supporting the workpiece to be polished and pressing the workpiece against the polishing surface, and a pusher for transferring the workpiece between the top ring and the pusher. The pusher comprises a workpiece support for supporting the workpiece, an actuating unit for moving the workpiece support in a vertical direction, a sliding mechanism movable within a horizontal plane, and a positioning mechanism for positioning the workpiece support and the top ring with respect to each other in association with the sliding mechanism when the workpiece is transferred between the workpiece support and the top ring.

Abstract: A polishing apparatus is used for polishing a workpiece such as a semiconductor wafer to a flat mirror finish. The polishing apparatus has an exhaust device for exhausting air in the polishing apparatus. The polishing apparatus includes a housing, a polishing section housed in the housing for polishing a workpiece, a cleaning section housed in the housing for cleaning the workpiece which has been polished, and a base comprising a plurality of structural members for supporting at least one device in at least one of the cleaning section and the polishing section. At least one of the structural members has a fluid passage therein and intake openings to serve as an exhaust duct. The polishing apparatus further comprises a main exhaust duct communicating with the exhaust duct and extending to an exterior of the housing for exhausting air introduced in the exhaust duct.

Abstract: An elastic polishing pad is adhered to the top face of a rotatable table. Above the table is provided a substrate holding apparatus for holding a substrate. The substrate holding apparatus comprises a rotary shaft, a substrate holding head in the form of a disc which is provided integrally with the lower edge of the rotary shaft, a sealing member in the form of a ring which is made of an elastic material and fastened to the peripheral portion of the lower face of the substrate holding head, and a guiding member in the form of a ring which is fastened to the back face of the substrate holding head to be located outside the sealing member. A fluid under pressure is introduced into a fluid flow path formed in the rotary shaft from one end thereof and supplied to a space from the other end of the fluid flow path so as to press the substrate against the polishing pad.

Abstract: A polishing apparatus such as a semiconductor wafer. The polishing apparatus has a turntable, a cloth cartridge detachably exchangeably mounted on the turntable, and a top ring for holding a workpiece and pressing the workpiece against the polishing cloth. The cloth cartridge includes a cartridge base member and a polishing cloth bonded to an upper surface of the cartridge base member. The cartridge base member comprises a plurality of base member segments, and the polishing cloth comprises a plurality of polishing cloth segments bonded to upper surfaces of respective of the base member segments.