Abstract: Semiconductor processors, sensors, semiconductor processing systems, semiconductor workpiece processing methods, and turbidity monitoring methods are provided. According to one aspect, a semiconductor processor includes a process chamber configured to receive a semiconductor workpiece for processing; a supply connection in fluid communication with the process chamber and configured to a supply slurry to the process chamber; and a sensor configured to monitor the turbidity of the slurry. Another aspect provides a semiconductor workpiece processing method including providing a semiconductor process chamber; supplying slurry to the semiconductor process chamber; and monitoring the turbidity of the slurry using a sensor.

Abstract: An abrasive device may include first ring-shaped container filled with a liquid abrasive medium. A second container may be arranged next to the first container and filled with a second liquid abrasive medium. A pivoting arm may be arranged between and above the containers and can be pivoted along a pivoting direction. A drag device may be arranged on the pivoting arm. The drag device may lead a gas turbine blade on a carrier arm through the abrasive medium.

Abstract: There is disclosed a polishing cloth having an abrasive layer containing a polymer material which is a hydrolyzable with an aqueous medium and being capable of exhibiting a stable polishing performance for a relatively long period of time without necessitating a dressing treatment.

Abstract: The present invention relates to a polishing method for polishing a workpiece by pressing the workpiece, to be polished, against a fixed abrasive and bringing the workpiece into sliding contact with the fixed abrasive. The polishing method includes a first step of polishing the workpiece while supplying a polishing liquid which contains an anionic surface-active agent and does not contain abrasive particles, and a second step of polishing the workpiece while supplying a polishing liquid which contains a cationic surface-active agent and does not contain abrasive particles.

Abstract: A substrate processing apparatus equipped to employ electrical potential to assist in planarization and/or conditioning is provided.

Abstract: The invention provides a method of polishing a substrate comprising a noble metal comprising (i) contacting the substrate with a CMP system and (ii) abrading at least a portion of the substrate to polish the substrate. The CMP system comprises an abrasive and/or polishing pad, a liquid carrier, and a sulfonic acid compound.

Abstract: A microelectronic substrate and method for removing conductive material from a microelectronic substrate. In one embodiment, the microelectronic substrate includes a conductive or semiconductive material with a recess having an initially sharp corner at the surface of the conductive material. The corner can be blunted or rounded, for example, by applying a voltage to an electrode in fluid communication with an electrolytic fluid disposed adjacent to the corner. Electrical current flowing through the corner from the electrode can oxidize the conductive material at the corner, and the oxidized material can be removed with a chemical etch process.

Abstract: A method of magnetic-abrasive machining of parts has the steps of supporting a part, generating a magnetic field by magnetic means located at one side of the part, placing a magnetic-abrasive powder on a surface located at another, opposite side of the part, so that the magnetic-abrasive powder is attracted by the magnetic means and pressed to the surface of the part, and providing a relative movement of the parts and the magnetic abrasive powder retained by the magnetic means relative to one another so as to machine the surface of the part which is therefore open for observation and supply of the magnetic abrasive powder; and an apparatus is proposed as well.

Abstract: There is provided a surface treated product that moves relatively in a fluid, wherein a surface of the surface treated product has continuous dimples, each dimple having a diameter of 10 to 2500 ?m and a depth of 50 ?m or less. The surface treated product significantly reduces resistance of a fluid to an object in the fluid, and significantly improves a flow state of the fluid.

Abstract: A polishing solution, comprising copper ions and chloride ions in Cu/Cl molar ratio of 10?1 to 103 and at pH 0.5 to 10, is suited for polishing a surface composed of a nonferrous metal material such as copper or copper alloy. Thicker metal film can be polished at high removal rate, so that distribution in film thickness becomes uniform.

Abstract: The aqueous dispersion comprising (A) abrasive grains, (B) at least one compound selected from the group consisting of 2-bromo-2-nitro-1,3-propanediol, 2-bromo-2-nitro-1, 3-butanediol, 2,2-dibromo-2-nitroethanol, and 2,2-dibromo-3-nitrilopropionamide, and (C) an organic component other than the compounds of component (B) is disclosed. The aqueous dispersion has no problem of rotting even if stored or used in a neutral pH region and produces an excellent polished surface with almost no dishing or scratches, when applied particularly to the STI process for manufacturing of semiconductor devices.

Abstract: A method and apparatus for delivering a polishing fluid to a chemical mechanical polishing surface is provided. In one embodiment, an apparatus for delivering a polishing fluid to a chemical mechanical polishing surface includes an arm having a plurality of holes formed in the arm for retaining a plurality of polishing fluid delivery tubes. Each of the tubes are disposed through one of the holes and coupled to the arm. The number of holes exceeds the number of tubes, thereby allowing the distribution of polishing fluid to a polishing surface and correspondingly the local polishing rates across a diameter of a substrate being polished to be controlled.

Abstract: Abrasive composition for the chemical-mechanical polishing in one stage of substrates used in the microelectronics semiconductors industry containing at least one metal layer and one insulator layer, comprising an acid aqueous suspension of individualized particles of colloidal silica, not linked to each other by siloxane bonds, having a mean particle diameter of between 5 and 20 nm and an oxidizing agent, and chemical-mechanical polishing process using such a composition.

Abstract: A modular fluid-dispensing system includes a master control dispenser and/or one or more satellite dispensers that communicate bi-directionally with the master control dispenser. The master control dispenser is programmable and may dispense one or more solutions. Each satellite may dispense fluid in either a stand-alone mode or under control of another fluid-dispensing-system component, such as a master control dispenser, or a grinder/polisher. A master control dispenser may store various multi-step dispensing methods and may advance a dispensing method to a next step automatically or based on a control signal received from a grinder/polisher. A master control dispenser may perform a fluid-dispensing method that is synchronized with a corresponding grinder/polisher method performed by a grinder/polisher that is coupled to the master control dispenser.

Abstract: A polishing composition to remove metal from a dielectric layer by, either single step CMP polishing, or two step CMP polishing, the composition including, an aqueous solution provided with a substance having molecules with respective silanols, and a concentration of ions that solublize the silanols to adsorb on a hydrated surface of the dielectric layer during said polishing.

Abstract: Method and apparatus for polishing substrates. A chemical mechanical polishing article comprises a body and a patterned surface. The patterned surface comprises a plurality of slurry distribution grooves and a plurality of islands on the body. Each of the plurality of the islands comprises a base portion, a polishing surface disposed thereon, and a contoured surface disposed therebetween. The base portion comprises one or more sidewalls defining at least a portion of the plurality of slurry distribution grooves. The polishing surface is smaller than the base portion, the difference therebetween attributable to the contoured surface. In a particular embodiment, conductive materials and low k dielectric films are polished with reduced or minimum substrate surface damage.

Abstract: A method of honing a cutting edge of a rotary cutting tool comprising inserting the cutting tool into a liquid bath having an abrasive media therein such that at least the cutting edges are immersed, and providing a relative displacement of the cutting tool and the liquid bath such that the abrasive media flows over the cutting edges.

Abstract: A process and apparatus for surface treating boundary walls of an interior chamber formed in a workpiece. Nozzle members are inserted through access openings which communicate with opposite sides of the interior chamber and are positioned so that discharge openings of the nozzle members are disposed in closely adjacent and directly opposed relationship. High velocity streams of carrier fluid having entrained solid abrasive media therein are simultaneously discharged from the nozzle members so that the opposed streams directly violently impact and are deflected radially outwardly for impact against the surrounding boundary walls. The opposed nozzle members are preferably simultaneously synchronously moved lengthwise of the chamber to effect treating of the boundary walls.

Abstract: By adding silica to ceria-based CMP slurries the polish process starts much faster than without silica thereby eliminating dead time in the polish process and eliminating process instability caused by changes in the dead time with operating conditions. A slurry for performing chemical mechanical polishing (CMP) of patterned oxides (e.g., STI, PMD, ILD) on a substrate, comprises: ceria particles having a concentration of 1.0–5.0 wt % and silica particles having a concentration of 0.1–5.0 wt %. A ratio of ceria concentration to silica concentration (ceria:silica) is from approximately 10:1 to nearly 1:1 by weight. The ceria particles have a particle size of 150–250 nm, and the silica particles have a particle size of greater than 100 nm. The silica may be fumed or colloidal. The slurry has a pH of approximately 9.0.

Abstract: The present invention includes a method of producing a planar display device by application of the method. The fine partition walls are formed on the surface of a second substrate that constitutes a second panel by jet processing using an abrasive comprised of a powder of calcium carbonate coated with silicone on the surfaces thereof. Each of the particles constituting the abrasive has a three-dimensional shape comprised of a stack of different-sized triangular or more-angular polygonal layers. The maximum particle diameter of the abrasive is not more than ½ times the width of the fine partition walls, and the mean particle diameter of the abrasive is not more than ? times the width of the fine partition walls.

Abstract: An apparatus and method for applying a blasting media, comprised of at least first and second separate types of particles, to a surface to be treated. Each type of particle may comprise a core coated with a desired component, e.g. abrasive, absorptive, polishing, etc., and the components are selected so as to minimize the density variation of different types of media being combined with one another for the surface treatment. The different types of particles are mixed with one another prior to application to a surface to be treated. The mixing may occur in a mixing tank prior to use, in the media supply conduit prior to the nozzle, at the discharge outlet of the nozzle, or just prior to contacting the surface to be treated. By employing different types of particles, cleaning and reuse of the media is facilitated while also minimizing the amount of media consumed per unit area of wall to be treated.

Abstract: A method and apparatus for conditioning polishing pads that utilize an apertured conditioning disk for introducing operation-specific slurries, without the need for additional tooling, platens, and materials handling. The a method and apparatus utilize a vacuum capability to pull waste material out of the conditioning pad and through the apertured conditioning disk to evacuate the apparatus through an outlet port, the apparatus may also include self-contained flushing means and a piezo-electric device for vibrating the pad conditioning apparatus.

Abstract: The described embodiments relate to methods and systems of forming slots in a substrate. One exemplary embodiment forms a feature into a substrate having a first substrate surface and a second substrate surface, and moves a sand drill nozzle along the substrate to remove substrate material sufficient to form, in combination with said forming, a slot through the substrate.

Abstract: In a method for the machine polishing of workpieces, the workpiece is immersed into a container filled with abrasive and is moved relative to the abrasive container. The workpiece is here moved up and down in the vertical direction, rotated about its own central axis and moved with its central axis inside the container.

Abstract: A method of chemical mechanical polishing that polishes a substrate by abrading a target material formed on the substrate with a polishing pad containing a slurry includes setting a polishing end time, at which time a predetermined thickness of the target material will have been removed from the substrate by polishing, polishing the substrate to remove the predetermined thickness of the target material, and increasing a level of byproduct contamination in the polishing pad to decrease a polishing rate, while polishing the substrate, so that the polishing rate decreases to approximately zero at the polishing end time.

Abstract: An abrasive jet apparatus is provided which includes an abrasive dispenser defining a compartment for storing a granular abrasive material and at least one metering orifice disposed in open communication therewith for dispensing the granular abrasive material. The apparatus also includes a shutter assembly disposed adjacent the metering orifice, which includes a shutter member angularly displaceable between first and second positions relative to the metering orifice. The shutter member has formed therethrough at least one shutter opening which in the first position is substantially fully aligned with the metering orifice, and in the second position is substantially fully offset therefrom. The apparatus further includes a position actuator operatively coupled to the shutter mechanism for reversibly displacing the shutter member to the first and second positions and a plurality of intermediate positions therebetween for occluding a selective portion of the metering orifice.

Abstract: A pipe renovating method and system in which a pipe is first cleaned and then coated with a suitable coating material. In the cleaning step, pressurized air and particles of abrasive material are pumped into a first end of a pipe while suction is applied to the second end of the pipe via a vacuum pump to improve flow along the entire length of the pipe. The coating material is subsequently pumped in at one end of the cleaned pipe while suction is applied at the other end. In each step, the suction flow rate is higher than the input flow rate, so as to steer the mixture towards the second end. This method can be used to coat and clean different sections of a pipe system, by connecting the input materials successively to different access ports in the system.

Abstract: Methods for removing material from microfeature workpieces are disclosed. A method in accordance with one embodiment of the invention includes disposing a surfactant-bearing polishing liquid between a doped silicon material of the microfeature workpiece and a polishing pad material. At least one of the workpiece and the polishing pad material is moved relative to the other to simultaneously and uniformly remove at least some of the doped silicon material from portions of the workpiece having different crystalinities and/or different doping characteristics. The surfactant can include a generally non-ionic surfactant having a relatively low concentration in the polishing liquid, for example, from about 0.001% to about 1.0% by weight.

Abstract: An inline-ready method of finishing the surface of a long material (W) capable of preventing any environmental problem from occurring and the mechanical properties of the long material from deteriorating, comprising the steps of holding the long material (W) by two or more elastic endless belts (1) with a specified force, rotating the elastic endless belts (1) in the same direction as or in the reverse direction to the moving direction of the long material by moving the long material (W) and increasing or decreasing the rotating speed of the elastic endless belts (1) more than or less than the moving speed of the long material, and loading powder and granular grinding material (S) between the elastic endless belts (1), characterized in that the grinding material (S) is moved relative to the long material (W) to rub the grinding material (S) against the long material (W) so as to finish the surface of the long material (W).

Abstract: A chemical mechanical polishing slurry composition and method for using the slurry composition for polishing copper, barrier material and dielectric material that comprises first and second-step slurries. The first-step slurry has a high removal rate on copper and a low removal rate on barrier material. The second-step slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first slurry comprises at least an organic polymeric abrasive.

Abstract: A surface of the gas turbine blade is smoothed by way of a drag finish process. A first ring-shaped container is filled with a liquid abrasive medium. A second container which is arranged next to the first container is filled with a second liquid abrasive medium. A pivoting arm is arranged between and above the containers and can be pivoted along a pivoting direction. A drag device is arranged on the pivoting arm. The drag device leads a gas turbine blade on a carrier arm through the abrasive medium.

Abstract: A method for manufacturing a substrate, a polishing process for a substrate, a method of reducing microwaviness for a substrate, each including the step of polishing a substrate to be polished with a polishing composition containing an abrasive and water with a polishing pad of which surface member has an average pore size of from 1 to 35 ?m; and a method of reducing scratches for a substrate, comprising the step of polishing a substrate to be polished with a polishing composition comprising an abrasive, an oxidizing agent, an acid, a salt thereof, or a mixture thereof and water, with a polishing pad of which surface member has an average pore size of from 1 to 35 ?m. The method for manufacturing a substrate can be used for finish polishing of a memory hard disk or for polishing of a semiconductor element.

Abstract: A method and apparatus of in situ monitoring and dispersing unwanted particles in slurry used during CMP polishing. The method includes providing a slurry path, applying to the slurry path a microcavitation field of a first level to detect particles of a predetermined size, applying to the slurry path a microcavitation field of a second level that is capable of dispersing said particles, and after the second applying step, feeding the slurry to a CMP polishing unit. Particle size may be detected and/or the microcavitation field strength may be set according to particle size. In addition, field strength may be calibrated according to levels determined by polystyrene control particles of a known size and/or concentration. A single or dual transducer may apply the microcavitation.

Abstract: A wafer polishing solution and method for polishing a wafer comprising an amino acid and calcium ions or barium ions. The wafer polishing solution can be adjusted to control cut rate and selectivity for modifying semiconductor wafers using a fixed abrasive CMP process.

Abstract: The circumferential edges of glass or ceramic disks used in disk drive data storage devices are preferably finished by ductile grinding to produce an essentially fracture-free surface, which is not chemically strengthened. Preferably, the material is glass, and both the inner and outer edges of the disk are finished. Edge finishing is preferably achieved in a two-stage process, involving a coarse grind and a ductile grind, using air bearing spindles rotated at high speed for grinding wheels and workpiece. Preferably, the grinding wheels are shaped to provide a radius at the juncture of the circumferential edges and flat disk surfaces.

Abstract: For use with a chemical mechanical polishing apparatus for polishing a semiconductor wafer having a platen, a polishing pad and a wafer carrier, an optical closed-loop control system. In one embodiment, the system includes a plurality of optical probes impacting a corresponding probe window and rigidly mountable through the platen. The system also includes a flash lamp configured to provide light to each of the plurality of optical probes and minimize an exposure time of the light onto the semiconductor wafer, a spectrograph configured to spatially image light received by each of the plurality of optical probes to a common charge-coupled device and produce real-time spectral reflectometry data therefrom. The system further includes a control subsystem configured to analyze the real-time spectral reflectometry data and determine at least one wafer state parameter therefrom, and cause the polishing to be adjusted based upon the at least one wafer state parameter.

Abstract: Aspects of the invention generally provide a method and apparatus for polishing a substrate using electrochemical deposition techniques. In one aspect, an apparatus for polishing a substrate comprises a counter-electrode and a pad positioned between a substrate and the counter-electrode and a pad positioned between a substrate and the counter-electrode. A dielectric insert is positioned between the counter-electrode and the substrate. The dielectric insert has a plurality of zones, each zone permitting a separate current density between the counter-electrode and the substrate. In another embodiment, an apparatus for polishing a substrate that include a conductive layer comprises a counter-electrode to the material layer. The counter-electrode comprises a plurality of electrically isolated conductive elements. An electrical connector is separately coupled to each of the conductive elements.

Abstract: The present invention is directed to methods for polishing and cleaning a wafer having CoFeNi structures within alumina fill to achieve corrosion-free, smooth, and planar surface. A preferred chemical mechanical polishing (CMP) method includes a CMP polishing compound including alumina abrasive particulates, 1H-Benzotriazole (BTA), and hydrogen peroxide (H2O2). A cleaning solution for CoFeNi structures in alumina fill of the present invention preferably includes 4-Methyl-1H-Benzotriazole in a concentration range of from 1% to 5%, 5-Methyl-1H-Benzotriazole in a concentration range of from 1% to 5%, hydrogenated 4-Methyl-1H-Benzotriazole in a concentration range of from 1% to 5%, hydrogenated 5-Methyl-1H-Benzotriazole in a concentration range of from 1% to 5%, sodium octanoate in a concentration range of from 5% to 10%, and water in a concentration range of from 65% to 95%. The cleaning solution is typically used with DI water to create an applied solution having a range of from 0.

Abstract: A disposable polish applying and buffing mitt comprising a multilayered mitt with a polish impervious layer removably attached to a material pervious to polish such that the material pervious to polish would stain the hand of the user if used to apply the polish but is suitable for buffing the object to which the polish has been applied. A disposable polish applying and buffing kit comprising a multilayered mitt with a first layer of polish impervious material removably secured to a second layer of polish impervious material forming a compartment therebetween which can hold a polish. The first layer of polish impervious material is removed from the second layer of polish impervious material to expose the polish for application. After the polish is applied to the object, the second layer of polish impervious material is removed to expose the buffing mitt.

Abstract: Disclosed are a polishing agent containing at least globular-silica powder and alumina powder, as well as a lapping method in which a workpiece is held between an upper turn table and a lower turn table and is lapped by rotating the upper and the lower turn tables while being supplied with a polishing agent, wherein the polishing agent supplied is the polishing agent containing at least globular-silica powder and alumina powder. Thus, there can be provided a polishing agent capable of further improving the quality, especially, the flatness of workpieces such as silicon wafers and capable of polishing the workpieces at an excellent polishing rate.

Abstract: A liquid suspension for planarizing an outer surface of a material comprises a liquid suspension medium of a specific liquid density; and a plurality of solid, contact-sensitive abrasive particles of a constant solid density and suspended in the liquid suspension medium. The liquid and solid densities are approximately the same so that the abrasive particles freely and stably suspend in the liquid suspension medium, without gravitational separation by settling down or floating up. In this way, damaging contacts of the solid abrasive particles with one another are minimized.

Abstract: A method and system for planarizing or polishing a substrate, particularly a memory or rigid disk, are provided. The method comprises abrading at least a portion of the surface with a polishing system comprising (i) a polishing composition comprising water, an oxidizing agent, and about 0.04 M or higher phosphate ion or phosphonate ion, and (ii) abrasive material. The present invention also provides a system for planarizing or polishing a substrate comprising (i) a polishing composition comprising water, an oxidizing agent, and about 0.04 M or higher phosphate ion or phosphonate ion, and (ii) silica particles.

Abstract: A magnetic hard disk substrate is produced by rotating an aluminum substrate or a glass substrate, supplying polishing slurry on its surface, pressing a polishing tape on the surface and running it in a direction opposite to the direction of rotation of the substrate. Texturing marks are formed with a line density greater than 70 lines/?m in the radial direction on the surface. The polishing slurry has abrading particles dispersed in a dispersant. The abrading particles may be monocrystalline diamond particles, polycrystalline diamond particles or cluster particles with such monocrystalline and polycrystalline diamond particles with diameters in the range of 1-50 nm. Agglomerated particles of such cluster particles that are agglomerated in the dispersant may also be included as the abrading particles.

Abstract: A chemical mechanical polishing process includes rotating at least one of a semiconductor substrate and polishing pad relative to the other. A chemical mechanical polishing slurry is provided intermediate the substrate and pad. The substrate is polished with the slurry and pad during the rotating. The chemical mechanical polishing slurry includes liquid and abrasive solid components. At least some of the abrasive solid component includes individually non-homogeneous abrasive particles.

Abstract: The present invention provides a multi-step aqueous composition useful for polishing a tantalum barrier material and copper from a semiconductor wafer, comprising by weight percent 0.1 to 30 oxidizer, 0.01 to 3 inorganic salt or acid, 0.01 to 4 inhibitor, 0.1 to 30 abrasive, 0 to 15 complexing agent and balance water, wherein the aqueous composition has a pH between 1.5 to 6.

Abstract: A chemical-mechanical polishing process for planarizing at least one or more of thin films formed on a substrate, wherein the chemical-mechanical polishing is performed using a slurry containing abrasive particles mainly made of sialon or boehmite. This process is advantageous in improvement of a polishing rate without degradation in planarity of the processed surface and in level of metal impurities.

Abstract: A scheme for filling plugs through chemical mechanical polishing comprises depositing a malleable conductive layer over a dielectric layer having openings formed therein. The malleable conductive layer is deposited such that a liner is formed within the openings, however the openings are not completely filled. A chemical mechanical polishing process using an alumina based slurry at a neutral or slightly basic pH and no oxidizer is used to smear the malleable conductive layer sufficiently to fill the remainder of the openings in the dielectric layer forming filled or substantially filled plugs.

Abstract: A pad conditioning system for conditioning a polishing pad in conjunction with polishing of a workpiece includes a pad conditioning head coupled with a positioning unit. The pad conditioning head includes a conditioning surface that is configured to be moved into contact with a polishing pad to condition the polishing pad. The pad conditioning system also includes a polishing liquid supply port disposed in the conditioning surface. The polishing liquid supply port is configured to selectively discharge polishing liquid during the conditioning operation. The discharged polishing liquid is worked into the polishing pad by the pad conditioning head during the conditioning operation. A workpiece, such as a semiconductor wafer, that is also moved into contact with the polishing pad is polished using the discharged polishing liquid.

Abstract: A new technical advancement in the field of precision aluminum optics permits high quality optical polishing of aluminum monolith, which, in the field of optics, offers numerous benefits because of its machinability, lightweight, and low cost. This invention combines diamond turning and conventional polishing along with india ink, a newly adopted material, for the polishing to accomplish a significant improvement in surface precision of aluminum monolith for optical purposes. This invention guarantees the precise optical polishing of typical bare aluminum monolith to surface roughness of less than about 30 angstroms rms and preferably about 5 angstroms rms while maintaining a surface figure accuracy in terms of surface figure error of not more than one-fifteenth of wave peak-to-valley.

Abstract: A device for finishing workpieces, such as automobile wheels. The device includes a bowl assembly containing polishing media therein, and a drive assembly including a rotatable turret which carries the wheels thereon so that same are orbitally driven through the polishing media. A cam arrangement is provided which essentially continuously adjusts the angle of the wheels relative to the polishing media by pivoting the wheels about respective vertical axes. The device is additionally provided with a vertical drive assembly which allows vertical oscillation of the wheels relative to the media, and the polishing device also permits adjustment of the pitch or rake angle of the wheels relative to the horizontal.