Abstract: An application for an apparatus for sharpening a cutting blade includes a source of high pressure water stream capable of cutting steel and a sharpening jig for positioning and holding the cutting blade perpendicular to the high pressure water stream, the sharpening jig provides a mechanism for moving the cutting blade so that a cutting edge of the cutting blade predictably passes beneath the high pressure water.

Abstract: The invention provides a chemical-mechanical polishing composition comprising silica, a compound in an amount sufficient to provide about 0.2 mM to about 10 mM of a metal cation selected from the group consisting of gallium (III), chromium (II), and chromium (III), and water, wherein the polishing composition has a pH of about 1 to about 6. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition.

Abstract: A method for fabricating a semiconductor device includes (a) depositing an insulating film on a semiconductor substrate; (b) forming a recess in the insulating film; (c) depositing a conductive film on the insulating film while filling the recess with the conductive film; and (d) polishing the conductive film. Step (d) includes a first polishing substep of using a first polisher pad conditioned with a first dresser and a second polishing substep of using a second polisher pad conditioned with a second dresser different from the first dresser.

Abstract: A method for machining a component. The method includes providing a machining apparatus configured to induce vibrations such that a vibration direction of the machining apparatus is substantially aligned with respect to a machining direction of the component, and vibrating the machining apparatus in the vibration direction to machine the component in the machining direction.

Abstract: The present application relates to polishing pads for chemical mechanical planarization (CMP) of substrates, and methods of fabrication and use thereof. The pads described in this invention are customized to polishing specifications where specifications include (but not limited to) to the material being polished, chip design and architecture, chip density and pattern density, equipment platform and type of slurry used. These pads can be designed with a specialized polymeric nano-structure with a long or short range order which allows for molecular level tuning achieving superior thermo-mechanical characteristics. More particularly, the pads can be designed and fabricated so that there is both uniform and nonuniform spatial distribution of chemical and physical properties within the pads.

Abstract: A target surface of a tape-shaped substrate of an oxide superconductor with an intermediate layer formed on this target surface and an oxide superconductor thin film is polished by causing the tape-shaped substrate to continuously run. The polishing step includes an initial polishing process for carrying out random polishing of the target surface and a finishing process that is carried out after the initial polishing process for forming grooves on the target surface along the running direction of the substrate. The intermediate layer has an in-plane directionality of 7° or less. The tape-shaped substrate is fabricated by rolling nickel, a nickel alloys or stainless steel.

Abstract: Provided is a method of polishing comprising providing a workpiece, providing a fixed abrasive article, providing conditioning particles, and relatively moving the workpiece and the fixed abrasive article in the presence of the conditioning particles to modify the surface of the workpiece and to condition the fixed abrasive. The fixed abrasive article comprises a substrate having a first surface and a region of abrasive composites distributed on the first surface of the substrate. The abrasive composites include a composite binder and abrasive particles, which may be in abrasive agglomerates together with a matrix material. The abrasive particles are harder than the workpiece. The conditioning particles are sufficient to condition one or more of the composite binder, matrix material, and abrasive agglomerates. The hardness of the conditioning particles is less than the hardness of the workpiece and they do not substantially polish the workpiece.

Abstract: A method of polishing a substrate surface containing silicon nitride and silicon oxide or silicon dioxide, comprising movably contacting the surface with a polishing pad and having a polishing composition disposed between the polishing pad and the surface, said polishing composition comprising 1) hydrous ceria abrasive; 2) polyvinylpyridine, vinyl pyridine copolymers, or both, and 3) water, wherein at 2 psi downpressure the silicon nitride removal rate is at least 500 angstroms per minute and the selectivity of silicon nitride to silicon oxide is at least 30.

Abstract: A polishing composition containing a silica, an acid, a surfactant, and water, wherein (a) the acid has solubility in water at 25° C. of 1 g or more per 100 g of an aqueous saturated solution; (b) the surfactant is a sulfonic acid represented by the formula (1) or (2), or a salt thereof; and (c) the polishing composition has a pH of a specified range; and a polishing process of a substrate using the polishing composition are provided. The polishing composition is suitably used, for example in polishing a substrate for disk recording media such as magnetic disks, optical disks and opto-magnetic disks.

Abstract: The present invention relates to a method of designing, previewing a stone veneer project in its entirety before a single stone is cut; cutting and finishing the edges of a stone to form interconnecting natural stone veneer components, each having a perimeter of a pre-determined contour and a finished edge, the method comprising: drawing or otherwise importing a design plan comprising overall dimensions and shape of a finished stone veneer project; drawing or otherwise importing a pattern of shape and placement of the stone veneer components within the design plan; programming, scanning or otherwise inputting a plurality of cutting patterns, wherein the cutting patterns are the same or different, each cutting pattern designed to form the stone veneer component having a perimeter of a pre-determined contour; converting the pattern into a machine-readable program to produce a cutting path on an abrasive waterjet machine; loading a cutting path file for the stone veneer component into the abrasive water jet mach

Abstract: A method of polishing a first component by a second component of a tribological pair is disclosed. The method includes mating the first component to the second component in a tribological configuration. The first component and the second component are moved such that a first surface of the first component and a second surface of the second component contact and slide against each other, so that the second component polishes the first component. The method further includes discontinuing moving of the first component and the second component when the first surface obtains a desired surface finish.

Abstract: A chemical mechanical polishing apparatus and a chemical mechanical polishing method thereof are provided. The chemical mechanical polishing method at least includes the following steps. In step a, a positive pressure is formed between a polishing pad and a wafer. In step b, the wafer is driven to revolve around a first central axis. In step c, a polishing slurry is injected between the polishing pad and the wafer. In step d, the positive pressure formed on the wafer by the polishing pad is adjusted for change the contacting modes of the polishing pad and the wafer as well as the wafer removal rate.

Abstract: A polishing head used for CMP is described, including a retaining ring that is for engaging with a wafer, a membrane and an edge control ring. The membrane includes a bottom part for engaging with the wafer, and a lip part contiguous with the bottom part. The edge control ring is disposed between the retaining ring and the membrane, including a bottom part that has an abutting surface. The abutting surface of the edge control ring contacts with the external surface of the lip part of the membrane when the membrane is not inflated.

Abstract: A polishing pad can include a first layer and a second layer. The first layer can have a first polishing surface and a first opening. The second layer can have an attaching surface and a second opening substantially contiguous with the first opening. The polishing pad can further include, a pad window lying within the first opening. The pad window can include a second polishing surface. When the pad would be attached to a platen, the first and second polishing surfaces can lie along a same plane, and an opposing surface of the pad window can abut an exterior surface of a platen window. In another aspect, a polishing apparatus can include an exterior surface of a platen window abutting the polishing pad. In still another aspect, a process of polishing can include polishing a workpiece such that the pad window contacts the workpiece and the platen window simultaneously.

Abstract: A retaining ring for CMP is disclosed. The retaining ring has a plurality of grooves. The grooves have rounded sidewalls. Because the sidewalls of the grooves of the retaining ring are rounded, the slurry is not apt to accumulate around them and the pad is less scratched. Accordingly, the micro-scratches on the wafer surface are reduced and the yield of the CMP step is increased. Its operational method and application system are also disclosed in this invention.

Abstract: A method of improving a removal rate of a pad includes producing a body of a pad of polyurethane from a mix; and introducing into the mix an additive which decreases an elastic rebound of the pad so as to increase a chemical-mechanical planarization removal rate; and using as the additive a substance which at least contains starch. In another embodiment, in a CMP process that includes removing a barrier and buffing a polyurethane after a bulk copper removal process, a polishing pad is used having a shore D hardness less than 35% and having at least one layer made from a mix composed of at least one of a prepolymer with an isocyanate concentration of between 6.5% and 11.0% to achieve a molal concentration, and a monomer in combination with an addition of isocyanate to achieve the substantially same molal concentration.

Abstract: In a method of producing a glass substrate for a mask blank, a surface of the glass substrate is polished by the use of a polishing liquid having a pH value between 7.0 and 7.6 that contains abrasive grains, and the abrasive grains include colloidal silica abrasive grains produced by hydrolysis of an organosilicon compound. The polishing process includes a surface roughness control step for initially finishing the surface of the glass substrate to a predetermined surface roughness by moving a polishing member and the glass substrate relative to each other under a predetermined pressure. This is followed by a protrusion suppressing step, carried out immediately before the end of the polishing process, under a pressure lower than the predetermined pressure, to minimize polishing rate and suppress occurrence of a fine convex protrusion. A mask blank and then a transfer mask are formed from this polished glass substrate.

Abstract: During polishing of the semiconductor wafer by using a double-sided polisher, a larger difference as compared to the prior art is created between a frictional resistance acting on a front surface of a silicon wafer from an upper surface plate side and a frictional resistance acting on a back surface of the silicon wafer from a lower surface plate side. Thereby, respective wafers can be rotated at as 0.1 - 1.0 rpm within corresponding wafer holding holes. Accordingly, the rotation of the wafer would not be suspended even if there were any defective condition induced during polishing. Further, partial variation or deviation in polishing volume particular in the outer periphery of the wafer would be hard to occur. Therefore, the polish-sagging is suppressed and thus the improved degree of flatness of the wafer could be obtained.

Abstract: An object is to provide a polishing carrier that can prevent scratches from occurring on the edge face of a substrate, and prevent debris from being produced from the edge face, while a single crystal silicon substrate, which is fragile, and has a high cleavage strength, is polished, and to make it difficult for debris to be produced due to rubbing against a cassette when it is stored in a cassette in subsequent processing, and prevent the substrate from being broken. Therefore a part of the internal circumference of a substrate holding hole in a polishing carrier, that makes contact with the silicon substrate is formed from a cushion whose hardness is less than that of the silicon substrate. For the cushion, any type selected from for example suede, polyamide resin, polypropylene resin, or epoxy resin may be used. Especially, the use of epoxy resin is desirable.

Abstract: A slider manufacturing method includes: providing a row bar constructed from multiple slider bodies having a surface for forming an air bearing surface (ABS); forming multiple cutting lines on the surface for forming an ABS of the row bar; forming a stress absorption region adjacent to the cut line in a cutting region defined by two adjacent cutting lines; grinding the surface for forming an ABS of the row bar; and cutting the row bar along the cutting lines to form multiple individual sliders. When the row bar is cut by a cutter into multiple individual sliders along the cutting lines, stress generated in the cutting region adjacent to cutting lines during cutting is partly or fully absorbed by the stress absorption region, reducing the chances of clear edge jumps forming at the edges of the ABS of the slider after the cutting, and disk surface scratching by the slider.

Abstract: A mechanical device and method for lapping a metal working surface, the device including: (a) a workpiece having the metal working surface; (b) a contact surface, disposed generally opposite the working surface, for moving in a relative motion to the working surface; (c) a plurality of abrasive particles, disposed between the contact surface and the working surface, and (d) a mechanism, associated with at least one of the surfaces, for applying the relative motion, and for exerting a load on the contact surface and the working surface, the contact surface for providing an at least partially elastic interaction with the abrasive particles, wherein, associated with the contact surface is a particulate additive material, and wherein, upon activation of the mechanism, the relative motion under the load causes a portion of the abrasive particles to lap the working surface, and wherein the relative motion under the load effects incorporation of a portion of the particulate additive material into the working surface

Abstract: A first polishing composition includes abrasive grains and an iodine compound and has a pH of 6 or more. The first polishing composition can suitably polish the Si [0001] plane of a single crystal silicon carbide substrate. A second polishing composition includes an iodine compound and has a pH of 8 or less. The second polishing composition can suitably polish the C [000-1] plane of a single crystal silicon carbide substrate. A third polishing composition includes abrasive grains and an iodine compound and has a pH of 6 to 8, inclusive. The third polishing composition can suitably polish each of the Si [0001] and C [000-1] planes of a single crystal silicon carbide substrate.

Abstract: The present invention mainly relates to a polishing pad comprising a base material comprising fibers; a membrane with low permeability; a two-component paste formed on the upper surface of the membrane with low permeability for adhering the base material to the membrane with low permeability; and a polyurethane paste formed on the lower surface of the membrane with low permeability. A method of polishing a substrate comprising using the polishing pad and a method for manufacturing the polishing pad as described above are also provided. The polishing pad as mentioned above prevents the polishing pad from detaching from the polishing platen or head. The polishing pad is easy to be replaced without leaving residues on the polishing platen or head.

Abstract: Compound-semiconductor-substrate polishing methods, compound semiconductor substrates, compound-semiconductor-epitaxial-substrate manufacturing methods, and compound semiconductor epitaxial substrates whereby oxygen superficially present on the substrates reduced. A compound semiconductor-substrate polishing method includes a preparation step (S10), a first polishing step (S20), and a second polishing step (S30). In the preparation step (S10), a compound semiconductor substrate is prepared. In the first polishing step (S20), the compound semiconductor substrate is polished with a chloric polishing agent. In the second polishing step (S30), subsequent to the first polishing step (S20), a polishing operation utilizing an alkaline aqueous solution containing an inorganic builder and having pH of 8.5 to 13.0 inclusive is performed.

Abstract: A CMP head includes a membrane support and a membrane. The membrane support is disk-shaped, having an origin and a radius R. The membrane support has at least a ventilator disposed in a central region within the range between origin and (2/3) R, and at least a diversion opening disposed in a peripheral region within the range between (2/3) R and R. The membrane includes a disk-shaped part disposed on the first surface of the membrane support, and an annular part surrounding the annular sidewall of the membrane support.

Abstract: A window polishing pad having a reduced stress pad window formed therein for performing optical end point detection are provided, wherein the window polishing pad comprises a pad window and a pressure relief channel, wherein the pressure relief channel extends to an outer periphery of the window polishing pad from a cavity formed behind the pad window when the window polishing pad is interfaced with a platen and wherein a membrane is provided over at least one of an inlet and an outlet of the pressure relief channel. Also disclosed are methods of making and of using the window polishing pads to polish a semiconductor wafer.

Abstract: A method of transferring a wafer is disclosed. The method comprises providing a pedestal and at least one spray orifice extending through the pedestal; disposing a wafer above the pedestal using a first robot, wherein the wafer has a first surface and a second surface, the first surface faces the pedestal, a fluid is sprayed onto the first surface simultaneously to avoid a contact of the first surface with the pedestal, and the fluid contains a charge-forming chemical substance dissolved therein; and taking the wafer using a robot for delivery. Due to the charge-forming chemical substance dissolved in the fluid, the waterfall effect to cause discharge damage on the wafer is avoided in the spraying of the fluid.

Abstract: The present invention relates to a polishing composition for a substrate including a metal such as wiring, etc., formed on a semiconductor wafer, which can provide a high polishing rate without causing scratches on the wiring metal, a method of producing the polishing composition, and a polishing method. The polishing composition for a semiconductor wafer comprises an acid and an aqueous medium dispersion containing positively-charged silica particles having an amino group-containing silane coupling agent bonded on a surface thereof, the polishing composition having a pH of 2 to 6.

Abstract: An anti-glare film, a method for manufacturing the anti-glare film, and a display device provided with the anti-glare film are provided. The anti-glare film includes fine irregularities formed on a surface of the anti-glare film, and wherein arithmetic mean roughness Ra of a roughness curve of the surface is 0.05 to 0.5 micrometers, and root mean square slope R?q is 0.003 to 0.05 micrometers.

Abstract: A sweetening and cleaning system that is used with one or more lapping machines to sweeten a lapping compound in a sweetening mode, and to clean parts of the system itself and parts of the one or more lapping machines with a cleaning compound in a cleaning mode. The system includes a virgin receptacle for holding the lapping compound, a cleaning receptacle for holding the cleaning compound, a waste receptacle for holding waste, and at least one pump.

Abstract: The present invention provides a polishing composition containing an organic nitrogen-containing compound, an organic polybasic acid, an abrasive, and water, wherein the organic nitrogen-containing compound has in the molecule two or more amino groups, two or more imino groups, or one or more amino groups and one or more imino groups; a method for manufacturing a substrate with the polishing composition; and a method for reducing surface stains of a substrate with the polishing composition. The polishing composition can be suitably used, for example, in the manufacturing step for a substrate for a hard disk such as a memory hard disk.

Abstract: An apparatus and method to test the abrasion resistance of materials. In one embodiment, the apparatus comprises a conduit network, a primary air stream generating device to generate a primary air stream in the conduit network, a secondary air stream generating device to produce a secondary air stream in the conduit network, and a particulate handling device to deposit particulate into the conduit network so that the particulate enters the secondary air stream. The conduit network merges the secondary air stream into the primary air stream to allow the particulate to enter the primary air stream, and allow the primary air stream to blow the particulate at a test sample positioned within the conduit network.

Abstract: The present invention relates to a load cup configured to speed up substrate transferring to and from a carrier head and to reduce corrosion during the transferring. One embodiment of the present invention provides a non-contact substrate holder comprising a pedestal having a top surface configured to support a substrate, and at least one injection port configured to eject a high velocity liquid stream on the top surface of the pedestal, wherein the liquid stream in configured to secure the substrate on the pedestal without the substrate contacting the top surface of the pedestal.

Abstract: A process is taught for producing a smooth, damage-free surface on a SiC wafer, suitable for subsequent epitaxial film growth or ion implantation and semiconductor device fabrication. The process uses certain oxygenated solutions in combination with a colloidal abrasive in order to remove material from the wafer surface in a controlled manner. Hydrogen peroxide with or without ozonated water, in combination with colloidal silica or alumina (or alternatively, in combination with HF to affect the oxide removal) is the preferred embodiment of the invention. The invention also provides a means to monitor the sub-surface damage depth and extent since it initially reveals this damage though the higher oxidation rate and the associated higher removal rate.

Abstract: The invention relates to an apparatus for removing material from a surface of a workpiece during grinding and/or polishing of the surface by means of abrasive particles which are delivered by a liquid. The apparatus comprises a device for setting the gas content in the liquid, in particular for adding gas, in particular air, to the liquid.

Abstract: A CMP polishing slurry of the present invention contains cerium oxide particles, water, and a polymer of at least one of a methacrylic acid and the salt thereof, and/or a polymer of at least one of a methacrylic acid and the salt thereof and a monomer having an unsaturated double bond, preferably contains furthermore a dispersant or a polymer of monomers containing at least one of an acrylic acid and the salt thereof. The present invention provides a CMP polishing slurry and a polishing method that, after polishing, give a polished film having a smaller difference in residual film thickness due to a pattern density difference.

Abstract: [Problems to Be Solved] To provide a method for obtaining a polishing composition by which a polishing speed is high and the polished surface has little surface failure. [Means to Solve the Problems] The present invention relates to a production method of a polishing composition containing zirconia oxide sol including: baking at a temperature ranging from 400 to 1000° C.

Abstract: The present invention provides a polishing slurry which remarkably inhibits the occurrence of scratch, dishing or erosion.

Abstract: Disclosed is a polishing method which is effective to prevent lowering of the polishing efficiency in the later stage of polishing. The polishing method is characterized in that polishing is performed while so adjusting a polishing liquid as to have a pH of not less than 2 and less than 7.

Abstract: There is disclosed a method for manufacturing a polishing pad that is formed of a urethane foam pad and attached to a turn table to polish a wafer, the method comprising at least steps of: slicing a urethane foam cake to provide the urethane foam pad; and performing press processing with respect to the urethane foam pad with a pressure of 15000 g/cm2 or above, a polishing pad manufactured by this method, and a method for polishing a wafer by using this polishing pad. There can be provided a method for manufacturing a polishing pad that can stably obtain a wafer with high flatness, etc.

Abstract: A polishing pad includes a guide plate, a porous slurry distribution layer and a flexible under-layer. Polishing elements are interdigitated with one another through the slurry distribution layer and the guide plate. The polishing elements may be affixed to the compressible under-layer and pass through corresponding holes in the guide plate so as to be maintained in a substantially vertical orientation with respect to the compressible under-layer but be translatable in a vertical direction with respect to the guide plate. Optionally, a membrane may be positioned between the guide plate and the slurry distribution layer. The polishing pad may also include wear sensors to assist in determinations of pad wear and end-of-life.

Abstract: A polishing composition includes more than 0.1% by mass of colloidal silica, and water, and has a pH of 6 or less. The polishing composition has the ability to polish a titanium material at a high stock removal rate. Thus, the polishing composition is suitable for use in applications for polishing a titanium-containing object.

Abstract: In a fluid polishing method for processing a fine aperture by slurry 7, the slurry is supplied from a cylinder 2a in a slurry flow rate target process until the flow rate increases to a target value of a slurry feed flow rate. When the flow rate reaches the target flow-rate, the cylinder is stopped and switched to another cylinder 2b and the operation fluid flow rate of the fine aperture is thereafter measured. In a metering process, to be executed next, a necessary processing time is calculated on the basis of the operation fluid flow rate and polishing is carried out for a necessary processing time by another cylinder 2b. Another cylinder is then stopped and switched and the operation fluid flow rate is measured. In this way, the metering process is repeated until the operation fluid flow rate reaches a predetermined value. In each process, the supply of the slurry is not interrupted.

Abstract: A proximity head and associated method of use is provided for performing confined area planarization of a semiconductor wafer. The proximity head includes a chamber defined to maintain an electrolyte solution. A cathode is disposed within the chamber in exposure to the electrolyte solution. A cation exchange membrane is disposed over a lower opening of the chamber. A top surface of the cation exchange membrane is in direct exposure to the electrolyte solution to be maintained within the chamber. A fluid supply channel is defined to expel fluid at a location adjacent to a lower surface of the cation exchange membrane. A vacuum channel is defined to provide suction at a location adjacent to the lower surface of the cation exchange membrane, such that the fluid to be expelled from the fluid supply channel is made to flow over the lower surface of the cation exchange membrane.

Abstract: An embodiment relates generally to a chemical mechanical polishing apparatus. The apparatus includes a platen adapted to receive a wafer to be chemical-mechanically polished and a polishing pad configured to polish the wafer. The apparatus also includes a slurry feed line configured to provide slurry to the polishing pad and at least one slurry dispensing outlet coupled to the slurry feed line and configured to dispense slurry as a mist of small droplets ranging from submicron to about 500 microns.

Abstract: An inline-ready method of finishing the surface of a long material (W) capable of preventing any environmental problem from occurring and the mechanical properties of the long material from deteriorating, comprising the steps of holding the long material (W) by two or more elastic endless belts (1) with a specified force, rotating the elastic endless belts (1) in the same direction as or in the reverse direction to the moving direction of the long material by moving the long material (W) and increasing or decreasing the rotating speed of the elastic endless belts (1) more than or less than the moving speed of the long material, and loading powder and granular grinding material (S) between the elastic endless belts (1), characterized in that the grinding material (S) is moved relative to the long material (W) to rub the grinding material (S) against the long material (W) so as to finish the surface of the long material (W).

Abstract: The present invention relates to a CMP polishing slurry, comprising cerium oxide particles, a dispersing agent, a water-soluble polymer and water, wherein the water-soluble polymer is a compound having a skeleton of any one of an N-mono-substituted product and an N,N-di-substituted product of any one selected from the group consisting of acrylamide, methacrylamide and ?-substituted products thereof. The amount of the water-soluble polymer is preferably in the range of 0.01 part or more by weight and 10 parts or less by weight for 100 parts by weight of the polishing slurry. Thus it is possible to provide a polishing slurry and a polishing method which make it possible to polish a film made of silicon oxide or the like effectively and rapidly and further control the process therefor easily in CMP technique for flattening an interlayer insulating film, a BPSG film, an insulator film for shallow trench isolation, and other films.

Abstract: A system for determining the magnetic permeability of a material is provided. Two electrical inductors formed as primary and secondary concentric coils share a common magnetic core space. An AC voltage applied to the primary coil creates a magnetic flux in the core proportional to the magnetic permeability of a sample of the material positioned within the core space. The magnetic flux induces an AC voltage in the secondary coil indicative of the sample magnetic permeability. When the material is a magnetorheological fluid, the magnetic permeability is proportional to the concentration of magnetic particles in the sample and can be back-calculated from the amplitude of the secondary voltage signal. Sensitivity and resolution can be increased by using two identical sets of coils wherein a reference material forms a core for the primary set and the MR fluid sample forms a core for the secondary set.

Abstract: A slider body characterized by rounded corners and edges and smooth surfaces, formed by polishing with a polymeric fiber and a free abrasive slurry of submicron particles.

Abstract: The polishing method of a disk-shaped substrate for polishing an outer circumference 13 of a disk-shaped substrate using slurry is provided with in this sequence: a first polishing process for polishing the outer circumference 13 using an abrasive-grain inclusion brush 50 made of a resin in which polishing abrasive grains are included; and a second polishing process for polishing the outer circumference 13 using a resin brush 60 made of a resin in which the polishing abrasive grains are not included.