Abstract: In a method of producing a glass substrate for a mask blank, a surface of the glass substrate is polished by the use of a polishing liquid having a pH value between 7.0 and 7.6 that contains abrasive grains, and the abrasive grains include colloidal silica abrasive grains produced by hydrolysis of an organosilicon compound. The polishing process includes a surface roughness control step for initially finishing the surface of the glass substrate to a predetermined surface roughness by moving a polishing member and the glass substrate relative to each other under a predetermined pressure. This is followed by a protrusion suppressing step, carried out immediately before the end of the polishing process, under a pressure lower than the predetermined pressure, to minimize polishing rate and suppress occurrence of a fine convex protrusion. A mask blank and then a transfer mask are formed from this polished glass substrate.

Abstract: A method of performing mechano-chemical polishing serving as a primary polishing operation for a GaAs wafer, by using a mechano-chemical polishing solution containing dichloroisocyanuric acid, sodium tripolyphosphate, sodium sulfate, sodium carbonate, and colloidal silica as components except for water, includes the steps of: mounting the wafer on a mechano-chemical polishing apparatus; performing first-stage polishing by supplying the polishing apparatus with the polishing solution having a first composition in which 20-31 mass % of sodium tripolyphosphate is contained in the components except for water; and subsequently performing second-stage polishing by supplying the polishing apparatus with the polishing solution having a second composition in which 13-19 mass % of sodium tripolyphosphate is contained in the components except for water.

Abstract: A slurry for polishing a phase change material, such as Ge—Sb—Te, or germanium-antimony-tellurium (GST), includes abrasive particles of sizes that minimize at least one of damage to (e.g., scratching of) a polished surface of phase change material, an amount of force to be applied during polishing, and a static etch rate of the phase change material, while optionally providing selectivity for the phase change material over adjacent dielectric materials. A polishing method includes applying a slurry with one or more of the above-noted properties to a phase change material, as well as bringing the polishing pad into frictional contact with the phase change material. Polishing systems are disclosed that include a plurality of sources of solids (e.g., abrasive particles) and provide for selectivity in the solids that are applied to a substrate or polishing pad.

Abstract: Disclosed herein is a planarization polishing method for polishing a polishing-target wafer for a planarized surface, the method including the step of polishing a polishing-target surface into a planarized surface by using polishing slurry that contains an abrasive grain and a surfactant encapsulated through surface coating.

Abstract: The present invention discloses a CMP abrasive comprising cerium oxide particles, a dispersant, an organic polymer having an atom or a structure capable of forming a hydrogen bond with a hydroxyl group present on a surface of a film to be polished and water, a method for polishing a substrate comprising polishing a film to be polished by moving a substrate on which the film to be polished is formed and a polishing platen while pressing the substrate against the polishing platen and a polishing cloth and supplying the CMP abrasive between the film to be polished and the polishing cloth, a method for manufacturing a semiconductor device comprising the steps of the above-mentioned polishing method, and an additive for a CMP abrasive comprising an organic polymer having an atom or a structure capable of forming a hydrogen bond with a hydroxyl group present on a surface of a film to be polished, and water.

Abstract: A method for polishing a substrate using a pad comprising, a polymeric matrix having microspheres dispersed therein, the polymeric matrix being formed of a water-based polymer or blends thereof, wherein the polymeric matrix is applied on a permeable substrate, and wherein the polishing pad exhibits reduced defectivity and improved polishing performance are provided.

Abstract: A method of polishing a substrate with a polishing composition comprising an oxidizing agent and abrasive particles having a surface, said surface of the abrasive particles being at least partially modified with 1) at least one stabilizer compound comprising aluminum, boron, tungsten, or both, said stabilizer compound being bound via a covalent bond to said abrasive particles, and 2) an organic chelating compound, said chelating compound being bound via a covalent bond to said stabilizer compound. The organic chelating compounds include one or more of 1) a nitrogen-containing moiety and between one and five other polar groups; 2) a sulfur-containing moiety and between one and five other polar groups; and 3) between two and five polar groups selected from carboxylic acid groups or salts thereof and hydroxyl groups.

Abstract: The disk-shaped substrate inner circumference polishing method for polishing an inner circumference of a disk-shaped substrate including a portion having an opening hole at the center thereof includes inserting a brush having a shaft core into the portion having the opening hole of the disk-shaped substrate; fixing one end and the other end of the brush to a pair of rotating shafts that are provided at mutually detached positions and pulling at least any one of the one end and the other end of the brush and applying tension in the axial direction to the shaft core of the brush; and rotating the brush and polishing the inner circumference of the disk-shaped substrate.

Abstract: The present invention is directed to a CMP polishing slurry comprising cerium oxide particles, an organic compound having an acetylene bond (triple bond between carbon and carbon) and water, and a method for polishing a substrate which comprises a step of polishing a film to be polished of the substrate with the polishing slurry. In a CMP (chemical mechanical polishing) technique for flattening inter layer dielectrics, insulating films for shallow trench isolation and the like in a manufacturing process of semiconductor devices, the present invention enables the effective and high-speed polishing.

Abstract: A method of operating a tribological system including the steps of: (a) providing a workpiece having a tribological working surface, the working surface including: (i) a metal surface layer; (ii) a plurality of organic particles intimately incorporated in the metal surface layer, and (iii) a plurality of inorganic particles incorporated in the working surface, the inorganic particles having a Mohs hardness of at least 8; (b) providing a counter-surface disposed opposite the working surface; (c) disposing a lubricant between the working surface and the counter-surface; (d) providing at least one mechanism, associated with at least one of the working surface and the second surface, for applying a relative motion between the surfaces, and for exerting a load on the surfaces; (e) exerting the load between the working surface and the counter-surface, and (f) applying the relative motion between the working surface and the counter-surface.

Abstract: A chemical mechanical polishing (CMP) slurry and a chemical mechanical polishing (CMP) apparatus and method reduce defects, such as scratches, while maintaining a high polishing rate of a target film to be polished through a CMP process. The CMP slurry includes a ceria-based abrasive having a concentration of 0.001-10 percent by weight and a silica-based abrasive having a concentration of 1-24 percent by weight.

Abstract: A polishing composition comprising an abrasive and water, wherein the polishing composition has an index of degree of sedimentation of 80 or more and 100 or less; a process for producing a substrate comprising polishing a substrate to be polished using the above-mentioned composition; a process for preventing clogging of a polishing pad comprising applying the above-mentioned composition; a process for preventing clogging of a polishing pad comprising applying the above-mentioned composition to polishing with a polishing pad for a nickel-containing object to be polished; and a process for preventing clogging of a polishing pad comprising applying a composition comprising a hydrophilic polymer having two or more hydrophilic groups in its molecule and a molecular weight of 300 or more, or a compound capable of dissolving nickel hydroxide at a pH of 8.0, and water to polishing with a polishing pad for a nickel-containing object to be polished.

Abstract: Semiconductor wafers have a front surface, a back surface, a notch, and an edge. A method of polishing a wafer includes polishing at least one of the surfaces and the notch of the wafer using a polishing pad and slurry. At least one surface of the wafer is cleaned of residual slurry. The cleaned surface is grasped by applying a vacuum to the cleaned surface of the wafer using a vacuum chuck. Edge of the wafer is polished using a pad and slurry while the wafer is grasped by the vacuum chuck.

Abstract: A composition and associated method for the chemical mechanical planarization (CMP) of metal substrates on semiconductor wafers are described. The composition contains a nonionic fluorocarbon surfactant and a per-type oxidizer (e.g., hydrogen peroxide). The composition and associated method are effective in controlling removal rates of low-k films during copper CMP and provide for tune-ability in removal rates of low-k films in relation to removal rates of copper, tantalum, and oxide films.

Abstract: A chemical mechanical polishing process and a method of fabricating a semiconductor device using the same are provided. The chemical mechanical polishing process includes applying a polishing activation solution with a reduced surface energy, wherein the polishing activation solution includes a surfactant; and polishing the object using the polishing activation solution. The method of fabrication includes forming a mask layer pattern on a semiconductor substrate, etching the substrate using the mask layer pattern as an etching mask, forming an insulating layer over a trench, and performing the chemical mechanical polishing above, wherein the object to be polished is the insulating layer.

Abstract: A composition and associated method for chemical mechanical planarization of a copper-containing substrate are described and which afford low defectivity levels on copper during copper CMP processing. The composition comprises a colloidal silica that is substantially free of soluble polymeric silicates.

Abstract: The polishing slurry is useful for removing ruthenium layers from patterned semiconductor substrates in the presence of at least one nonferrous interconnect metal and a dielectric. The polishing slurry includes 0.001 to 10 weight percent periodic acid or salt, at least 0.0001 weight percent inhibitor for reducing removal rate of the nonferrous interconnect metals, 0.00001 to 5 weight percent organic additive for reducing dielectric removal rate, the organic additive being selected from at least one of water soluble polymers and surfactants, the organic additive containing an ethylene oxide group or an amide group, 0.1 to 50 weight percent abrasive and balance water; and the slurry having a pH of greater than 8 to 12.

Abstract: A self-cleaning colloidal slurry and process for finishing a surface of a glass, ceramic, glass-ceramic, metal or alloy substrate for use in a data storage device, for example. The slurry comprises a carrying fluid, colloidal particles, etchant, and a surfactant adsorbed and/or precipitated onto a surface of the colloidal particles and/or substrate. The surfactant has a hydrophobic section that forms a steric hindrance barrier and substantially prevents contaminates, including colloidal particles, from bonding to the substrate surface. The slurry is applied to the surface of the substrate while a pad mechanically rubs the surface. Subsequent cleaning with standard soap solutions removes substantially all remaining contamination from the substrate surface. In an exemplary embodiment, the slurry is used to superfinish a glass disk substrate to a surface roughness of less than 2 ?, with substantially no surface contamination as seen by atomic force microscopy (AFM) after standard soap cleaning steps.

Abstract: A linear motion apparatus has a guide shaft including a spiral-shaped or linear-shaped rolling element rolling groove, a movable body including a spiral-shaped or linear-shaped rolling element rolling groove opposed to the rolling element rolling groove of the guide shaft, a large number of rolling elements rollably moving along a rolling element rolling passage formed between the rolling element rolling grooves of the guide shaft and movable body and, a rolling element return passage communicating with the rolling element rolling passage, wherein, in the portion of the rolling element rolling groove of the movable body that is adjacent to an open end of a rolling element return passage, an escape portion is formed by abrasive flow machining in such a manner that the grinding depth thereof increases gradually toward the open end of the rolling element return passage.

Abstract: The lapping of a slider is controlled based on an amplitude of a readback signal which is produced from an externally applied magnetic field. A lapping plate is used to lap a slider which includes at least one magnetic head having a read sensor. During the lapping, a coil produces a magnetic field around the slider and processing circuitry monitors both a readback signal amplitude and a resistance of the read sensor. The lapping of the slider is terminated based on the monitoring both the readback signal amplitude and the resistance. Preferably, the lapping of the slider is terminated when the resistance is within a predetermined resistance range and the readback signal amplitude is above a predetermined minimum amplitude threshold or reaches its peak value. Asymmetry can also be measured in the described system, where the lapping process is terminated based on asymmetry as well as resistance and amplitude measurements.

Abstract: The invention is directed to polished glass substrates suitable for extreme ultraviolet lithography. The elements are silica-titania glass elements having a coefficient of thermal expansion of 0±30×10?9/° C. or less, and containing 5-10 wt. % titania. The polished elements have a mid-spatial frequency peak-to-valley roughness of <10 nm and a high-spatial frequency roughness of <0.20 nm average roughness. The invention is further directed to a method of for producing optical elements suitable for extreme ultraviolet lithography (“EUVL”), the method having at least the steps of providing a glass substrate in the shape of the desired optical element and polishing the shaped substrate using a high abrasive slurry flow rate of >2.0 ml/cm2/min. Generally the flow rates are in the range of 2.0-10 ml/cm2/min. Glass substrates suitable for extreme ultraviolet lithography element have a coefficient of thermal expansion of 0±30×10?9/° C. or less.

Abstract: There is a micro-machining apparatus for removing the micro-machining dust generated at the time of machining while a workpiece M is machined within a liquid W using a probe tip. The apparatus includes a stage on which the workpiece is to be placed; a probe having the probe tip, a machining device having a moving means that moves the stage and the probe relative to each other to machine the workpiece by the probe tip, and a micro-machining dust removing device having a first electrode and a second electrode that are arranged in the liquid so as to sandwich the probe tip therebetween, and a voltage application means that applies a voltage to between both the electrodes to move the micro-machining dust in the liquid.

Abstract: The present invention is a method for producing a polishing agent in which silica particles are dispersed in an aqueous solution, comprising at least a step of removing metal compound ions from a prepared silica sol by ion exchange (B); a step of purifying further the ion-exchanged silica sol (D); a step of adding alkali metal hydroxide to the purified silica sol (F); and a step of adding an acid to the silica sol to which the alkali metal hydroxide is added (G). There is provided a method for producing a polishing agent which can extremely effectively suppress metal contamination when a silicon wafer or the like is polished can be produced.

Abstract: To provide a polishing composition which is capable of selectively polishing a silicon oxide film against a polysilicon film, and a polishing method employing such a polishing composition. The polishing composition of the present invention comprises abrasive grains selected from silica and ceria; an alkali selected from ammonia, an ammonium salt, an alkali metal salt and an alkali metal hydroxide; and an organic modified silicone oil selected from a polyoxyethylene-modified silicone oil, a poly(oxyethyleneoxypropylene)-modified silicone oil, an epoxy/polyether-modified silicone oil and an amino/polyether-modified silicone oil.

Abstract: Methods of refining using a plurality of refining elements are discussed. A refining apparatus having refining elements that can be smaller than the workpiece being refined are disclosed. New refining methods, refining apparatus, and refining elements disclosed. Methods of refining using frictional refining, chemical refining, tribochemical refining, and electrochemical refining and combinations thereof are disclosed. A refining apparatus having magnetically responsive refining elements that can be smaller than the workpiece being refined are disclosed. The refining apparatus can supply a parallel refining motion to the refining element(s) for example through magnetic coupling forces. The refining apparatus can supply multiple different parallel refining motions to multiple different refining elements for example solely through magnetic coupling forces to improve refining quality and versatility. A refining chamber can be used. New methods of control are refining disclosed.

Abstract: A method for abrasive machining of surfaces of components is provided. The method is effectuated by the device including a tool (1) having an inlet (11) and an outlet (12); a supply unit for conveying to the inlet (11) a liquid in which abrasive agents are dissolved and which emerges from the outlet (12); and a positioning means which guides the tool across a surface to be machined and simultaneously positions the tool in such manner that the outlet faces the surface to be machined, an area of an annular gap (3) defined by boundary walls (13) of the outlet (12) and the surface (2) to be machined being smaller than a cross-sectional area of the inlet (11).

Abstract: Texturing slurry for texturing a substrate for a magnetic hard disk is obtained by dispersing abrading particles of a specified kind in a specified kind of dispersant. The abrading particles include diamond clusters formed with artificial diamond particles with primary particle diameter of 20 nm or less and surrounded by impurities containing chlorine at a certain ratio. The cluster diameter and the average cluster diameter of the diamond clusters are each within a specified range. For texturing a substrate surface, the substrate is rotated, texturing slurry of this invention is supplied to the surface and a texturing tape of a specified kind is pressed against the substrate surface while it is caused to run.

Abstract: A polishing slurry including an oxidant, a metal oxide dissolver, a metal inhibitor and water and having a pH from 2 to 5. The metal oxide dissolver contains one or more compounds selected from one or more acids (A-group) selected from acids of which the negative value of the logarithm of the dissociation constant Ka (pKa) of a first dissociable acid group is less than 3.7 and from which five acids of lactic acid, phthalic acid, fumaric acid, maleic acid and aminoacetic acid are excluded, ammonium salts of the A-group and esters of the A-group, and one or more compounds selected from one or more acids (B-group) selected from acids of which the negative value of the logarithm of the dissociation constant Ka (pKa) of a first dissociable acid group is 3.7 or more and the five acids, ammonium salts of the B-group and esters of the B-group.

Abstract: Broadly speaking, the present invention provides a method and an apparatus for planarizing a semiconductor wafer (“wafer”). More specifically, the present invention provides for depositing a planarizing layer over the wafer, wherein the planarizing layer serves to fill recessed areas present on a surface of the wafer. A planar member is positioned over and proximate to a top surface of the wafer. Positioning of the planar member serves to entrap electroless plating solution between the planar member and the wafer surface. Radiant energy is applied to the wafer surface to cause a temperature increase at an interface between the wafer surface and the electroless plating solution. The temperature increase in turn causes plating reactions to occur at the wafer surface. Material deposited through the plating reactions forms a planarizing layer that conforms to a planarity of the planar member.

Abstract: A chemical mechanical polishing slurry for polishing a copper layer without excessively or destructively polishing a barrier layer beneath the copper layer is disclosed and includes an acid, a surfactant, and a silica sol having silica polishing particles that are surface modified with a surface charge modifier and that have potassium ions attached thereto. A method for preparing the chemical mechanical polishing slurry and a chemical mechanical polishing method using the chemical mechanical polishing slurry are also disclosed.

Abstract: A processing method for glass substrate of the present invention includes: applying heat and external force to a glass substrate and then cooling it down to thereby form a compression stressed part having a different etching rate from that of other parts with respect to an etching reagent to be used, on the surface of the glass substrate and in the vicinity thereof, and performing chemical etching using the etching reagent on the glass substrate having the compression stressed part formed thereon, so as to form a relief on the surface of the glass substrate.

Abstract: A rough-polishing method for conducting a rough polishing before mirror-finish polishing on a semiconductor wafer (W) using a polishing apparatus (1) includes a first polishing step for polishing the semiconductor wafer using slurry containing colloidal silica supplied by a slurry supplying unit (4) and a second polishing step for polishing the semiconductor wafer using alkali solution provided by mixing deionized water supplied from a deionized-water supplying unit (5) and alkali concentrate solution supplied by an alkali-concentrate-solution supplying unit (6). The pH value of the alkali solution and polishing time in the second polishing step are determined based on the load current value of the polishing table (2) in the first polishing step.

Abstract: Polishing slurry is caused to be present between a surface of a soft magnetic layer and a polishing tool such as a polishing pad and the surface of the soft magnetic layer and the polishing tool are moved relative to each other. The polishing slurry contains silica particles as abrading particles, compounds containing carboxylic acid and amino polycarboxylic acid and an oxidizing agent as a polishing accelerator, organic and/or inorganic compound of phosphoric acid, nitride and/or nitrite as an anti-corrosion agent and a pH conditioner such that the slurry has pH value between 4 and 11.

Abstract: Retaining rings and associated planarizing apparatuses, and related methods for planarizing micro-device workpieces are disclosed herein. A carrier head configured in accordance with one embodiment of the invention can be used to retain a micro-device workpiece during mechanical or chemical-mechanical polishing. In this embodiment, the carrier head can include a retaining ring carried by a workpiece holder. The retaining ring can include an inner surface, an outer surface, and a base surface extending at least partially between the inner and outer surfaces. The retaining ring can further include at least one annular groove and a plurality of transverse grooves. The annular groove can be positioned adjacent to the base surface between the inner and outer surfaces. The plurality of transverse grooves can extend from the inner surface of the retaining ring to the annular groove in the base surface.

Abstract: A refractory metal recovery method includes applying a coolant to a wheel grinding operation at a total rate exceeding a total rate at which the coolant evaporates and distributing the coolant across an interface with the abrasive wheel sufficient to apply the coolant at local rates exceeding local rates at which the coolant evaporates. The method produces refractory metal swarf and decreases oxidation of the swarf compared to dry grinding, allowing collection of the swarf. The abrasive grit may have a size of from about 16 to about 24 mesh and the coolant may contain a nitrite.

Abstract: An object of the present invention is to provide a polishing method and a polishing apparatus that can secure an even polished shape and can remove slurry that has contributed to polishing and contains polishing by-product to the outside of a pad efficiently to reduce scratches due to the polishing by-product, and can suppress consumption of slurry to the minimum to realize cost reduction during running for mass production.

Abstract: Reducing CMP wafer contamination by in-situ clean is disclosed herein. The invention can be employed in a method in which a conductive layer is formed on a surface of a semiconductor wafer. After a portion of the conductive layer is removed, an acidic solution is directly or indirectly applied to the semiconductor wafer. Then the semiconductor wafer is engaged with a polishing pad as the acidic solution is applied directly or indirectly to the semiconductor wafer. In one embodiment, the portion of the conductive layer is removed by a CMP tool, and the semiconductor wafer is engaged with the polishing pad before the semiconductor is removed from the CMP tool.

Abstract: The invention provides a chemical-mechanical polishing composition comprising: (a) silica particles, (b) about 5×10?3 to about 10 millimoles per kilogram of at least one alkaline earth metal selected from the group consisting of calcium, strontium, barium, and mixtures thereof, based on the total weight of the polishing composition, (c) about 0.1 to about 15 wt. % of an oxidizing agent, and (d) a liquid carrier comprising water. The invention also provides a polishing composition, which optionally comprises an oxidizing agent, comprising about 5×10?3 to about 10 millimoles per kilogram of at least one alkaline earth metal selected from the group consisting of calcium, strontium, and mixtures thereof. The invention further provides methods for polishing a substrate using the aforementioned polishing compositions.

Abstract: A polishing composition contains at least one water soluble polymer selected from the group consisting of polyvinylpyrrolidone and poly(N-vinylformamide), and an alkali, and preferably further contains at least one of a chelating agent and an abrasive grain. The water soluble polymer preferably has a weight average molecular weight of 6,000 to 4,000,000. The polishing composition is mainly used in polishing of the surfaces of semiconductor wafers such as silicon wafers, especially used in preliminary polishing of the surfaces of such wafers.

Abstract: A slurry feeding apparatus includes closed slurry bottle, piping, wet nitrogen generator, wet nitrogen supply pipe, suction and spray nozzles, temperature regulator, flow rate control valves, slurry delivery pump and controller for controlling the operation and flow rate of the slurry delivery pump. While a wafer is being polished by a CMP polisher, the controller continuously operates the pump. On the other hand, while the polisher is idling, the controller starts and stops the pump intermittently at regular intervals. No stirrer like a propeller is inserted into the slurry bottle, but the slurry is stirred up by spraying the slurry through the spray nozzle.

Abstract: Polishing compositions and methods for removing conductive materials from a substrate surface are provided. In one aspect, a method is provided for processing a substrate to remove conductive material disposed over narrow feature definitions formed in a substrate at a higher removal rate than conductive material disposed over wide feature definitions formed in a substrate by an electrochemical mechanical polishing technique, and then polishing the substrate by at least a chemical mechanical polishing technique.

Abstract: A method for producing a glass substrate for a magnetic disk by polishing a circular glass plate, which comprises a step of polishing the principal plane of the circular glass plate by using a slurry containing at least one water-soluble polymer selected from the group consisting of a water-soluble organic polymer having amino groups, a water-soluble organic polymer having amine salt groups and a water-soluble organic polymer having quaternary ammonium salt groups, and colloidal silica.

Abstract: A simple yet effective system for cleaning fans and air circulators facilitates the cleaning of ceiling and hard-to-reach units without having to remove the blades or other parts to be cleaned. A flexible bag encloses parts of a fan to be cleaned. A source of compressed air is used for inflating the bag, and a source of vacuum is used for collecting particulates used for cleaning. A user-controlled nozzle is used for spraying particulates against parts of the fan to be cleaned. The user-controlled nozzle terminates in a narrow tube operative to puncture the bag, which is preferably a transparent plastic bag. The source of compressed air and the source of vacuum may share a common vacuum unit with particulate filter such as a “shop-vac” type of equipment. The particulates used for cleaning may include any suitable abrasive though, in the preferred embodiment, granulated walnut or other nut shells are used. In contrast to devices that clean with liquids, the enclosure may envelope the motor and blades.

Abstract: A composition suitable for tantalum chemical-mechanical polishing (CMP) comprises an abrasive, an organic oxidizer, and a liquid carrier therefor. The organic oxidizer has a standard redox potential (E0) of not more than about 0.5 V relative to a standard hydrogen electrode. The oxidized form comprises at least one pi-conjugated ring, which includes at least one heteroatom directly attached to the ring. The heteroatom can be a N, O, S or a combination thereof. In a method embodiment, a CMP composition comprising an abrasive, and organic oxidizer having an E0 of not more than about 0.7 V relative to a standard hydrogen electrode, and a liquid carrier therefor, is utilized to polish a tantalum-containing surface of a substrate, by abrading the surface of the substrate with the composition, preferably with the aid of a polishing pad.

Abstract: A polishing composition for memory hard disk containing water and silica particles, wherein the silica particles have a particle size distribution in which the relationship of a particle size (R) and a cumulative volume frequency (V) in a graph of particle size-cumulative volume frequency obtained by plotting a cumulative volume frequency (%) of the silica particles counted from a small particle size side against a particle size (nm) of the silica particles in the range of particle sizes of from 40 to 100 nm satisfy the following formula (1): V?0.5×R+40 (1), wherein the particle size is determined by observation with a transmission electron microscope (TEM). The polishing composition of the present invention can be even more suitably used for the manufacture of a substrate for precision parts such as substrates for memory hard disks.

Abstract: An unexpanded perlite ore polishing composition is shown. The composition comprises base material having grains of unexpanded perlite ore of a selected distribution of particle sizes which undergo fracturing of the grains as a function of an abrasive force applied to the base material. The selected distribution of particle sizes includes a significant volume of grains of unexpanded perlite ore having a (d90) particle size in a range of about 101 to about 229 ?m. The base material is responsive to an abrasive force being applied thereto during polishing resulting in continued fracturing of the grains of unexpanded perlite ore to yield a final polishing composition having a sufficiently low level of abrasiveness under said abrasive force making it suitable for use in polishing. Compositions for polishing acrylic dentures and CRT tube surfaces using the unexpanded perlite ore polishing composition and methods for polishing the same are also shown.

Abstract: A polishing wheel including a lower polishing surface and defining a different color from a secondary portion of the polishing wheel, so as to indicate wear of the polishing surface. The polishing surface includes a plurality of main radial flutes extending from a central passage to an outer edge. A reduced profile for the main radial flutes is provided adjacent to the outer edge. A plurality of secondary radial flutes is provided extending from the outer edge, but not in communication with either the central passage or the main radial flutes.

Abstract: To provide a slurry for Chemical Mechanical Polishing, a Chemical Mechanical Polishing method using said slurry, and a method of producing electronic devices using said method that makes it possible to achieve a low scratch process capability in processing surfaces such as SiO2 film surfaces and the like and also to enable speed polishing to attain a high processing efficiency. Slurry for Chemical Mechanical Polishing characterized in comprising abrasive grains and water, wherein said abrasive grains are composite particles coated with ceria particles consisting of organic host particles and ceria particles, zeta potential of said composite particles being a negative potential, the organic host particles constituting the composite particles coated with ceria particles are organic host particles to which carboxyl groups and sulfonyl groups are introduced; the slurry is added with panarization additive; and the planarization additive is poly(methyl)acrylic acid ammonium salt.

Abstract: A particulate media/fluid delivery system comprises a tank for containing a supply of particulate media, preferably an abrasive powder. A modulator is disposed upstream of the tank for modulating the pressure of air flowing therethrough. A mixing chamber is adjacent to the tank, and an orifice is provided for delivering particulate media from the tank into the mixing chamber. A fluid inlet delivers fluid from the modulator to the tank, and a bypass tube is disposed adjacent to the fluid inlet for receiving fluid from the fluid inlet and delivering the fluid into the tank. A discharge port is provided for delivering a fluid/particulate media mixture to a tool. Control of the fluid/particulate is via differential modulation pressure. This differential modulation pressure is a function of two mechanisms, namely, the modulator in the system, including bypass (or blend) air around it that is metered, and the aforementioned bypass tube.

Abstract: Methods and apparatus for removing materials from microfeature workpieces. One embodiment of a subpad in accordance with the invention comprises a matrix having a first surface configured to support a polishing medium and a second surface opposite the first surface. The subpad in this embodiment further includes a hydro-control agent in the matrix. The hydro-control agent has a hydrophobicity that inhibits liquid from absorbing into the subpad. The hydro-control agent, for example, can be coupling agents that are generally hydrophobic, surfactants that are hydrophobic, or other agents that are compatible with the matrix and at least generally hydrophobic.