Abstract: The present invention provides a method of handling abrasive solids materials used in an abrasive cutting procedure which jets a high-pressure abrasive slurry through a nozzle (7) onto a work piece over and/or in a catcher tank (8). This handling method includes catching the used abrasive slurry together with work piece kerf material in the catcher tank, and passing at least some abrasive solids collected in the catcher tank as a slurry to a partitioning apparatus which includes a vibratory sieve (27). The handling method also includes partitioning the slurry with the partitioning apparatus in order to provide at least two solids streams. One of the solid streams passes through the sieve and the other passes across the sieve whilst entrained as a slurry. The handling method further includes passing as a slurry to the nozzle (7) for jetting a pressurised or pressurisable slurry that has partitioned solids stream which has passed through the sieve (27).

Abstract: The invention provides a method for polishing a substrate comprising a metal in an oxidized form, the method comprising the steps of: (a) providing a substrate comprising a metal in an oxidized form, (b) contacting a portion of the substrate with a chemical-mechanical polishing system comprising: (i) a polishing component, (ii) a reducing agent, and (iii) a liquid carrier, and (c) abrading at least a portion of the metal in an oxidized form to polish the substrate. The reducing agent can be selected from the group consisting of 3-hydroxy-4-pyrones, ?-hydroxy-?-butyrolactones, ascorbic acid, borane, borohydrides, dialkylamine boranes, formaldehyde, formic acid, hydrogen, hydroquinones, hydroxylamine, hypophosphorous acid, phosphorous acid, a metal or metal ions in an oxidation state having a standard redox potential that is less than the standard redox potential of the metal in an oxidized form, trihydroxybenzenes, solvated electrons, sulfurous acid, salts thereof, and mixtures thereof.

Abstract: The present invention belongs to the field of surface modification of solid materials, specifically relates to a method of changing the surface wettability of polymer materials. The method of the present invention comprises of rubbing the surface of the polymer materials various times by using sand paper of different grades (GB/T 15305) with a determined pressure at the ambient temperature, so as to change the contact angle of said surface of polymer material with water thereby changing the surface wettability of the polymer materials to different degrees. The method of the present invention has advantages of using devices that are simple, low cost, and the surface characteristics of the polymer materials could be changed from hydrophilicity to hydrophobicity, from hydrophobicity to super hydrophobicity, or from hydrophilicity to super hydrophilicity, at ambient temperature without any special requirement to the polymer materials or the preparation process thereof.

Abstract: A polishing method includes the steps of, performing a chemical-mechanical polishing with a first acid slurry, in the case of polishing soft magnetic layer with iron alloy that contains silicon and aluminum, and performing a mechanical polishing with a second weak acid or neutral slurry with a pH different from that of the first slurry.

Abstract: A substrate holding rotating mechanism is used to hold and rotate a substrate to be processed. The substrate holding rotating mechanism according to the present invention includes at least three spindles, clamp rollers mounted respectively on the spindles for holding a periphery of a substrate, a rotating device for rotating at least one of the clamp rollers, at least one base member on which at least one of the spindles is installed, and a rotational mechanism adapted to allow the base member to be rotatable.

Abstract: A chemical mechanical polishing process includes rotating at least one of a semiconductor substrate and polishing pad relative to the other. A chemical mechanical polishing slurry is provided intermediate the substrate and pad. The substrate is polished with the slurry and pad during the rotating. The chemical mechanical polishing slurry includes liquid and abrasive solid components. At least some of the abrasive solid component includes individually non-homogeneous abrasive particles.

Abstract: A polishing pad (20) for polishing a wafer (32) or other article, the pad having a groove network (60) configured to increase the residence time polishing medium (46) on the pad. The groove network has a first portion (72) that may extend substantially radially outwardly and an oscillating portion (74) that begins at a transition point (76) and is configured to slow the radially outward flow of the polishing medium.

Abstract: Finishing a seal assembly as a unit is proposed, which prevents alignment of the end gaps of the annular body and the annular ring of the seal assembly, provides the ability to manufacture the seal assembly to very low tolerances, and establishes virtually perfect parallelism between the upper and lower surfaces of the seal assembly. A finishing process is characterized by lapping a seal assembly as an assembled unit with a lapper using gritted oil as a polishing medium.

Abstract: A method for removing at least a portion of a structure, such as a layer, film, or deposit, including ruthenium metal and/or ruthenium dioxide includes contacting the structure with a material including ceric ammonium nitrate. A material for removing ruthenium metal and amorphous ruthenium dioxide includes ceric ammonium nitrate and may be in the form of an aqueous solution including ceric ammonium nitrate and, optionally, other solid or liquid solutes providing desired properties. In one application, the method and material may be utilized to etch, shape, or pattern layers or films of ruthenium metal and/or ruthenium dioxide in the fabrication of semiconductor systems and their elements, components, and devices, such as wires, electrical contacts, word lines, bit lines, interconnects, vias, electrodes, capacitors, transistors, diodes, and memory devices.

Abstract: The lapping of a slider is controlled based on an amplitude of a readback signal which is produced from an externally applied magnetic field. A lapping plate is used to lap a slider which includes at least one magnetic head having a read sensor. During the lapping, a coil produces a magnetic field around the slider and processing circuitry monitors both a readback signal amplitude and a resistance of the read sensor. The lapping of the slider is terminated based on the monitoring both the readback signal amplitude and the resistance. Preferably, the lapping of the slider is terminated when the resistance is within a predetermined resistance range and the readback signal amplitude is above a predetermined minimum amplitude threshold or reaches its peak value. Asymmetry can also be measured in the described system, where the lapping process is terminated based on asymmetry as well as resistance and amplitude measurements.

Abstract: An abrasive flow apparatus for polishing a workpiece wherein a horizontal machine tool is adapted such that a workpiece may be secured to first shaft rotatable about a first longitudinal axis. A conjugate form to the workpiece may be secured to a second shaft which is rotatable about a second longitudinal axis. The workpiece and conjugate form are secured to each shaft in a manner such that they are facing one another and slightly set apart to define a gap. A flowable abrasive media is introduced within this gap. The centerlines of the workpiece and the conjugate form are offset from one another such that rotation of the shafts in the same direction and at the same rotational speed produces relative motion between the workpiece and the conjugate form thereby polishing the workpiece. A slide may be used for axially positioning the first shaft and the second shaft a predetermined distance to define the size of the gap.

Abstract: A chemical mechanical polishing aqueous dispersion comprises abrasives (A) containing ceria, an anionic water-soluble polymer (B) and a cationic surfactant (C), wherein the amount of the anionic water-soluble polymer (B) is in the range of 60 to 600 parts by mass based on 100 parts by mass of the abrasives (A) containing ceria, and the amount of the cationic surfactant (C) is in the range of 0.1 to 100 ppm based on the whole amount of the chemical mechanical polishing aqueous dispersion.

Abstract: A method of polishing workpieces in a magnetic float polishing chamber comprising a lower chamber piece and an upper chamber piece which is removably receivable in the lower chamber piece and is connected to a powered spindle for rotating the upper chamber piece in the polishing operation. The method preferably comprises one or more of the steps of (a) geometrically aligning the upper chamber piece with the powered spindle by machining the upper chamber piece in-situ, (b) machining the contact surface of the upper chamber piece in-situ between various polishing runs, and (c) mounting the lower chamber piece in a manner effective for causing the lower piece to automatically self-align coaxially with the upper chamber piece.

Abstract: A polishing pad has a resin sheet having a flat surface and abrading particles fixed inside and on the surface of this resin sheet. Its tensile strength is in the range of 30 MPa or greater and 70 MPa or less and preferably in the range of 40 MPa or greater and 60 MPa or less. Its tensile tear elongation is in the range of 50% or less, preferably 20% or less and more preferably 5% or less. The average diameter of the primary particles of the abrading particles is in the range of 0.005 ?m or greater and less than 0.5 ?m, and preferably in the range of 0.005 ?m or greater and 0.2 ?m or less. The content of the abrading particles fixed to the resin sheet is 10 volume % or greater and 50 volume % or less, or preferably 10 volume % or greater and 24 volume or less.

Abstract: A method of forming a device, such as an electrode array for a cochlear implant. The method comprises a step of forming a predetermined pattern of relatively electrically conductive regions and relatively electrically resistive regions in a sheet of biocompatible electrically conductive material, such as platinum foil. The method can comprise a step of working on the sheet to remove predetermined portions therefrom to form the one or more discrete relatively conducting regions. The step of working on the sheet can comprise embossing the sheet, cutting or slicing the sheet, or using electrical discharge machining (EDM) to remove unwanted portions of the sheet, the EDM equipment having a cutting tool comprising an electrode.

Abstract: A surface finishing method for aluminum shapes by barrel polishing, wherein caps are mounted at both open ends of a hollow aluminum shape, and two aluminum shapes each mounted with the caps are set on two right and left holders so as not to interfere with each other, the two aluminum shapes held above and below by the two right and left holders are next put in a barrel pot, and water, a compound, and a medium are put in the barrel pot, and then the barrel pot is closed by a lid. A plurality of barrel pots are installed on a centrifugal barreling machine, and the centrifugal barreling machine is operated so that the aluminum shapes are rotated and revolved.

Abstract: A variety of techniques may be employed, alone or in combination, to enhance contact between a processed substrate and applied megasonic energy. In accordance with one embodiment of the new invention, the vibration plate is brought into intimate contact with one surface of the substrate, while cleaning or processing fluid contacts the other. In accordance with an alternative embodiment of the present invention, a reflecting surface may be provided to cause emanated energy to be reflected back into the near field and make it more uniform. In accordance with another alternative embodiment of the present invention, energy may be transferred across a substrate bounded on both sides by liquid with incidence of megasonic energy that is either normal to the substrate surface or within a critical range of incident angles. In yet another embodiment, generated dilatational waves may be converted to surface waves prior to contacting the substrate.

Abstract: The polishing apparatus is capable of transferring a work piece to a top ring without moving the work piece from the center and capable of precisely polishing the work piece. The polishing apparatus has a transfer unit for transferring the work piece to the top ring. The transfer unit comprises: a guide member having a receiving section, which centers the work piece; a mounting table vertically moving with respect to the guide member, the mounting table having a mounting section, which receives the centered work piece; and a supporting mechanism supporting the mounting table and allowing the mounting table to move downward. The mounting table is relatively moved close to the top ring and presses the work piece onto the top ring so as to transfer the work piece to the top ring.

Abstract: An ingot 3 of a hexagonal III-nitride crystal is cut using a wire array 21 composed of a wire 22. On this occasion, the ingot 3 is cut in such a manner that the ingot 3 is sliced with supply of an abrasive fluid while feeding at least one of the ingot 3 and wire 22 in a direction perpendicular to an extending direction B of the wire 22. During cutting the ingot 3, the extending direction B of the wire 22 is inclined at 3° or more to the {1-100} plane of the ingot 3.

Abstract: Methods and apparatuses for planarizing a microelectronic substrate. In one aspect of the invention, a first portion of an energy-sensitive, non-sacrificial planarizing pad material is exposed to a selected energy without exposing a second portion of the material to the selected energy source. The planarizing pad material is exposed to a solvent to remove material from one of the first or second portions of the planarizing pad material at a faster rate than removing material from the other of the first and second portions. The process forms a plurality of recesses directly in the surface of the planarizing pad which are configured to support a planarizing liquid proximate to the surface of the planarizing pad material during planarization of the microelectronic substrate. Alternatively, the process can form a mold having protrusions that are pressed into the planarizing pad to define the recesses in the pad.

Abstract: A method of separating, recovering and reusing components of an exhausted slurry used in slicing silicon wafers from a silicon ingot. In the method, the solid particles and lubricating fluid of the exhausted slurry are separated without decreasing the viscosity of the exhausted slurry. The separated lubricating fluid may be collected and reused in the preparation of a fresh slurry. Additionally, the silicon particulate and metal slicing wire particulate are dissolved and separated from the abrasive grains. The abrasive grains are separated into spent abrasive grains and unspent abrasive grains. The separated unspent abrasive grains are suitable for reuse in the preparation of a fresh slurry.

Abstract: A method and apparatus for measuring an abrasion amount and a friction force of a polishing pad using a thickness change of a slurry film in a chemical mechanical polishing operation are provided. In a preferred method, for example, a first displacement of a semiconductor wafer with respect to a polishing pad is measured during an initial stage and a first reference range of the thickness change of the slurry film is preferably set to determine a replacement time corresponding to the abrasion amount of the polishing pad. A conditioning condition of the polishing pad conditioning can also be set, and a second displacement of the semiconductor wafer with respect to the polishing pad can be measured when the surface of the semiconductor wafer is polished by the polishing pad. The first displacement is then preferably compared with the second displacement to calculate the thickness change of the slurry film formed between the polishing pad and the semiconductor wafer.

Abstract: It is an object of the present invention to provide a blasting method and a shot material, which are very practical both in the cost and the treatment performance. (a) A shot material containing a styrene ion-exchange resin or a waste material caused therefrom, or/and a dried sludge-derived material, (b) a shot material containing a resin which is comprised of a resin containing a rubber component and a resin containing no rubber component, and (c) a shot material containing at least one component selected from the group consisting of an epoxy resin composition and inorganic filler, and a blasting method using the shot material.

Abstract: The present invention is an apparatus for polishing a precision screw. The apparatus uses abrasive in a sealed container for polishing. Hence, the present invention can do precise polishing to obtain smooth surface of thread by removing tiny burrs with the abrasive.

Abstract: Disclosed herein are a system and method of polishing a layer of a substrate. The disclosed method includes providing a polishing apparatus adapted to impart relative movement between a polishing pad and a substrate having a first layer to be polished; providing a liquid medium having a pH between 4 and 11 to an interface between the substrate and the polishing pad, the liquid medium including a pH controlling substance including at least one of an acid and a base, a carbonate and a stabilizer additive comprising at least one selected from the group consisting of amino acids and polyacrylic acid; and moving at least one of the substrate and the polishing pad relative to the other to polish the layer of the substrate.

Abstract: Double-sided polishing equipment configured to polish a rectangular substrate, comprising a carrier having a pocket configured to accommodate a rectangular substrate, a lateral linear moving mechanism configured to move the carrier, first and second polishing pads with first and second rotational axes, respectively, offset from centers of the pads, the polishing surfaces of the first and second polishing pads being parallel. The equipment further includes at least one elevating mechanism coupled to at least one of the polishing pads, first and second rotary drive mechanisms coupled to each of the first and second polishing pads, respectively; and configured to rotate the first and second pads about the first and second rotational axes. A polishing-agent supplying device is present and configured to supply polishing agent to a plane where a substrate that is accommodated in the pocket to accommodate the substrate comes into contact with the polishing pads.

Abstract: The present invention relates to a polishing composition more suitable for use in polishing synthetic resin products or metal products. The polishing composition includes a reaction product produced by a reaction between a polyalkylene oxide and a compound having a functional group having reactivity with a hydroxyl group, aluminum oxide, a polishing accelerator including at least one salt selected from the group consisting of a metal salt of an inorganic acid or organic acid and an ammonium salt of an inorganic acid or organic acid, and water.

Abstract: A polishing apparatus comprises a polishing tool having a polishing surface, and a holder device (top ring) for holding a semiconductor wafer (a substrate). The polishing apparatus further comprises a color CCD camera for taking a color image of a region on the polishing surface; an image processor for determining whether or not any foreign matter exists on the polishing surface based on a condition of a color in color image data acquired by the color CCD camera; and an apparatus operation control section which in response to determination of the image processing section, stops relative movement between the semiconductor wafer and the polishing surface and separates the top ring and the polishing surface from each other.

Abstract: A centrifugal processor is disclosed with includes an outer frame having an inner surface and an axis. At least one inner vessel positioned within the outer frame and is adapted to receive an object to be processed. A drive system rotate the inner vessel with respect to the outer frame and along the inner surface of the outer frame. The drive system includes a central shaft engaged with the vessel for rotating the vessel about the axis. An environmental control system is included which channels a secondary medium to or from the vessel to assist in the processing of the object. The environmental control system includes a manifold formed in at least a portion of the central shaft and adapted to channel the secondary medium. At least one port is formed in the central shaft and connected to the manifold. A conduit connects the port and the inner vessel for channeling the secondary medium between the manifold and the interior of the vessel.

Abstract: A chemical-mechanical polishing pad, and method of polishing a substrate using a polishing pad, comprising (a) a resilient subpad, and (b) a polymeric polishing film substantially coextensive with the resilient subpad, wherein the polymeric polishing film comprises (i) a polishing surface that is substantially free of bound abrasive particles, and (ii) a back surface releasably associated with the resilient subpad.

Abstract: Method and apparatus for chemically, mechanically and/or electrolytically removing material from microelectronic substrates. A polishing medium for removing material can include a liquid carrier, an electrolyte disposed in the liquid carrier, and abrasives disposed in the liquid carrier, with the abrasives forming up to about 1% of the polishing liquid by weight. The polishing medium can further include a chelating agent. An electrical current can be selectively applied to the microelectronic substrate via the polishing liquid, and a downforce applied to the microelectronic substrate can be selected based on the level of current applied electrolytically to the microelectronic substrate. The microelectronic substrate can undergo an electrolytic and nonelectrolytic processing on the same polishing pad, or can be moved from one polishing pad to another while being supported by a single substrate carrier.

Abstract: A system and method are disclosed for edge blending hard drive head sliders by oscillating abrasive lapping tape across the edges of multiple sliders simultaneously. Lapping tape is inserted between each of a number of head sliders bonded to a edge blending jig of an edge blending assembly. The edge blending assembly is adjusted to cause the lapping tape to partially wrap an edge of each slider. The head sliders are edge blended by the relative movement between the sliders and the lapping tape.

Abstract: Planarizing workpieces, e.g., microelectronic workpieces, can employ a process indicator that is adapted to change an optical property in response to a planarizing condition. This process indicator may, for example, change color in response to reaching a particular temperature or in response to a particular shear force. In this example, the change in color of the process indicator may be correlated with an ongoing operating condition of the planarizing machine, such as excessive downforce, or correlated with an endpoint of the planarizing operation. Incorporating the process indicator in the planarizing medium, as proposed for select applications, can enable relatively simple, real-time collection of information that can be used to control a planarizing operation.

Abstract: Methods are provided for shaping, maintaining the shape of, and cleaning a probe tip using a pad such as a multi-layer adhesive and abrasive pad. The multi-layer adhesive and abrasive pad may be formed from layers of adhesive material having abrasive particles in-between each layer. Using the pad, probe tips may be shaped as desired from an unfinished probe stock, substantially limiting the use of relatively expensive conventional machining operations. Further, the pad may also be used to maintain probe tips in a desired operating shape. Still further, the pad may be used to clean accumulated debris from the probe tip. Preferably, the maintenance and cleaning operations are performed on-line, with the probes operatively installed in connection with testing machinery.

Abstract: There is disclosed a polishing method comprising contacting a polishing surface of a semiconductor substrate with a polishing pad comprising a resin as a main component and attached to a turntable, and dropping a CMP slurry onto the polishing pad to polish the polishing surface, the CMP slurry comprising a resin particle, an inorganic particle, a polymerizable component, and a polymerization initiator.

Abstract: A method and apparatus for removing conductive material from a microelectronic substrate. In one embodiment, a support member supports a microelectronic substrate relative to a material removal medium, which can include first and second electrodes and a polishing pad. One or more electrolytes are disposed between the electrodes and the microelectronic substrate to electrically link the electrodes to the microelectronic substrate. The electrodes are then coupled to a source of varying current that electrically removes the conductive material from the substrate. The microelectronic substrate and/or the electrodes can be moved relative to each other to position the electrodes relative to a selected portion of the microelectronic substrate, and/or to polish the microelectronic substrate. The material removal medium can remove gas formed during the process from the microelectronic substrate and/or the electrodes.

Abstract: A method of using finishing aids for advanced finishing control is described. A finishing surface is used generally to induce frictional wear. The finishing aids with preferred in situ control can improve control of the coefficient of friction, the tangential force of friction, a finishing rate, a regional finishing rate(s), a differential finishing rate, and help reduce unwanted defects. A finishing aid can reduce friction. A lubricant is an illustrative finishing aid. The method uses finishing control subsystem having a multiplicity of operative process sensors along with tracked information to improve in situ control of finishing. Differential finishing rate methods are described to differentially finish semiconductor wafers. Differential lubricating film methods are described to differentially finish semiconductor wafers. Planarization and localized finishing can be improved using differential lubricating boundary layer methods of finishing with improved real time control.

Abstract: A polishing pad (20) for polishing a wafer (32) or other article, the pad having a groove network (60) configured to vary the residence time across the wafer track of the reaction products formed by the interaction of reactants in the polishing medium (46) with structure on the wafer. The groove network has a first portion (72) that may extend substantially radially outward and a second portion (74) that is configured to vary the speed of the radially outward flow of the polishing medium.

Abstract: Methods and apparatuses for selectively removing conductive materials from a microelectronic substrate. A method in accordance with an embodiment of the invention includes positioning the microelectronic substrate proximate to and spaced apart from an electrode pair that includes a first electrode and a second electrode spaced apart from the first electrode. An electrolytic liquid can be directed through a first flow passage to an interface region between the microelectronic substrate and the electrode pair. A varying electrical signal can be passed through the electrode pair and the electrolytic liquid to remove conductive material from the microelectronic substrate. The electrolytic liquid can be removed through a second flow passage proximate to the first flow passage and the electrode pair.

Abstract: A method for removing a metal oxide overlayer over a target polishing surface in conjunction with a chemical mechanical polishing (CMP) process to improve polishing uniformity including providing a substrate target polishing surface having a layer of an oxide of a metal overlying said metal to be chemically mechanically polished; removing the layer of an oxide of the metal using an oxide removal solution prior to performing a CMP process with an abrasive slurry; and, polishing the target polishing surface according to an a CMP process with an abrasive slurry including at least one of an oxidizer and a complexing agent.

Abstract: A polishing agent for polishing a surface of a target object without unduly scratching it includes mother particles and very fine abrading particles which are supported on the surfaces of the mother particles and remain so supported during a polishing process, becoming reattached if removed. Such an agent is produced by adding the mother particles into the abrading particles and stirring them together. In a polishing process, a specified amount of such an agent is supplied onto a lapping plate and a lapping process is carried out while the plate is rotated at a specified rotational speed.

Abstract: A surface of the gas turbine blade is smoothed by way of a drag finish process. A first ring-shaped container is filled with a liquid abrasive medium. A second container which is arranged next to the first container is filled with a second liquid abrasive medium. A pivoting arm is arranged between and above the containers and can be pivoted along a pivoting direction. A drag device is arranged on the pivoting arm. The drag device leads a gas turbine blade on a carrier arm through the abrasive medium.

Abstract: For planarizing an IC (integrate circuit) material, a first slurry is dispensed for a first planarization of the IC material using the first slurry, and a second slurry is dispensed for a second planarization of the IC material using the second slurry. The first and second slurries are different. For example, the first slurry is silica based for faster planarization during the first planarization. Thereafter, the second planarization is performed with the second slurry that is ceria based with higher planarity for attaining sufficient planarization of the IC material.

Abstract: A polishing wheel including a lower polishing surface and defining a different color from a secondary portion of the polishing wheel, so as to indicate wear of the polishing surface. The polishing surface includes a plurality of main radial flutes extending from a central passage to an outer edge. A reduced profile for the main radial flutes is provided adjacent to the outer edge. A plurality of secondary radial flutes is provided extending from the outer edge, but not in communication with either the central passage or the main radial flutes.

Abstract: An apparatus is provided for destroying or disabling an information or data storage device comprising a first layer and a second layer bonded together. A mechanical device or energy form is inserted into the information or data storage device to cause the first and second layers to separate from each other.

Abstract: The invention is about reducing friction and wear and risk of seizure of mechanically interacting lubricated surfaces. A working surface of a mechanical piece engaged with another piece in relative sliding movement is processed for reduced friction. Two distinctly separate zones are allocated on the surface, one attractive to a lubricant used and the other repelling to the lubricant. The repellency may be conveyed to the repelling zone by either a mechanical modifying process or by a chemical change. In a preferred embodiment of the invention the repellency is obtained by lapping. The lubricant attractive layers are associated in a preferred embodiment of the invention with an assembly of recessed microstructures.

Abstract: A system for cutting steel plate, in particular for cutting the bottom and/or the wall of an oil storage tank, comprising a hydraulic or pneumatic pump and a movable cutting device comprising a hydraulic or pneumatic motor for moving the cutting device, wherein the pump and the motor are hydraulically or pneumatically interconnected by means of hoses.

Abstract: A planarization method includes providing a Group VIII metal-containing surface (preferably, a platinum-containing surface) and positioning it for contact with a fixed abrasive article in the presence of a planarization composition, wherein the fixed abrasive article comprises a plurality of abrasive particles having a hardness of no greater than about 6.5 Mohs dispersed within a binder adhered to at least one surface of a backing material.

Abstract: For PMR (Perpendicular Magnetic Recording) design, one of the major technology problems is the use of CMP to fabricate the pole structure. If the device is under-polished there is a danger of leaving behind a magnetic shorting layer while if it is over-polished there may be damage to the main pole. This problem has been overcome by surrounding the main pole, write gap, stitched write head pillar with a layer of CMP etch stop material which, using optical inspection alone, allows CMP (performed under a first set of conditions) to be terminated just as the stitched write head gets exposed. This is followed by a second CMP step (performed under a second set of conditions) for further fine trimming of the stitched head, as needed.

Abstract: During the processing of workpieces using a water jet, standstill times or even operating interruptions arise on the machine tools when the processed workpieces are removed and the workpieces to be processed are positioned on the machine. This is made more difficult above all in water-abrasive jet cutting, which is known to be performed on immersed workpieces. Through a water basin, which may be flooded in a simple way and has a foldable side wall having lift-pivot cylinders on its front side, supports may be pushed into and out of the water basin. A loading station, having lifting devices, positioned behind the machine tool allows the preparation of workpieces while the machine tool executes a jet processing. The loading station having a linear drive allows the stacking of prepared supports. According to the method, the flooding of the water basin and the control of the foldable side wall are tailored to the loading station, through which a performance increase of the machine tool arises.