Abstract: To provide a substrate which is not substantially chipped or cracked on the substrate end faces even when the substrate is a silicon substrate made of a brittle material, and provide a substrate which prevents dust raising from the substrate end faces and prevents dust raising due to rubbing with a processing cassette. A silicon substrate for a magnetic recording medium is formed by setting the lengths L of chamfered portions between the main surfaces of the substrate and the outer circumferential side end face to 0.1±0.03 mm and setting the angles ? between the main surfaces and the chamfered portions between the main surfaces and the outer circumferential side end face to 45 degrees ±5 degrees. It is also possible for a curved portion with a radius of 0.01 mm or more and less than 0.3 mm is interposed between the main surfaces and the outer circumferential side chamfered portions of the substrate.

Abstract: Methods and apparatus for providing a flushing system for flushing a top surface of an optical head. The flushing system includes a source of gas configured to provide a flow of gas, a delivery nozzle, a delivery line that connects the source of gas to the delivery nozzle, a vacuum source configured to provide a vacuum, a vacuum nozzle, and a vacuum line that connects the vacuum source to the vacuum nozzle. The source of gas and the delivery nozzle are configured to direct a flow of gas across the top surface of the optical head. The vacuum nozzle and vacuum sources are configured so that the flow if gas is laminar.

Abstract: Embodiments described herein provide methods for manufacturing an optical device having shaped sidewalls. A substrate material can be shaped to form a substrate portion of an optical device comprising an exit face and sidewalls positioned and shaped to reflect light to the exit face to allow light to escape the exit face. The sidewalls can be polished to a desired degree of polish. Polishing can be done using a polishing tool, etching, particle jet polishing or other polishing method.

Abstract: Provided is a CMP method. According to the CMP method, an interlayer insulating layer having two or more layers is etched to form a trench and/or via hole, and a combined thickness of the two or more layers are measured. A barrier metal layer and a metal layer are sequentially formed in the trench and/or via hole. Portions of the metal layer, the barrier metal layer and the interlayer insulating layer are removed. After that, the combined thickness of the two or more insulating layers is measured again.

Abstract: Planarizing workpieces, e.g., microelectronic workpieces, can employ a process indicator which is adapted to change an optical property in response to a planarizing condition. This process indicator may, for example, change color in response to reaching a particular temperature or in response to a particular shear force. In this example, the change in color of the process indicator may be correlated with an ongoing operating condition of the planarizing machine, such as excessive downforce, or correlated with an endpoint of the planarizing operation. Incorporating the process indicator in the planarizing medium, as proposed for select applications, can enable relatively simple, real-time collection of information which can be used to control a planarizing operation.

Abstract: When manufacturing welded blisk drums for gas-turbine engines, two or more integrally bladed blisks are joined to a blisk drum by welding, with this drum being subsequently heat-treated. In the final processing step, the blisk blades are polished, with the blisk drum as a whole being immerged into a flowable, pasty abrasive medium, and with a relative movement between the blisk drum and the abrasive medium being generated by translation and/or vibration and/or rotation of the blisk drum or a tub containing the abrasive medium. In order to avoid changes in shape of the blade edges during polishing, relative movement in these areas is prevented by guiding elements. The blade edges may also be masked, or surplus material may be provided on the blade edges, which afterwards is removed during grinding.

Abstract: Ultrasonic machining is used to fabricate at least a portion of patterned surfaces that are used directly or indirectly for guided tissue generation. Tissues may be cultivated directly in the patterned surfaces or the patterned surfaces may be used as molds for polymer tissue scaffolds.

Abstract: A method of producing silicon blocks by cutting a silicon ingot is provided. The method uses a silicon ingot cutting slurry containing abrasive grains and an alkaline substance so as to provide the silicon blocks that can be produced into silicon wafers each having a thin thickness with reduced substrate damage at the time of producing a solar battery. The alkaline substance has a content mass that is at least 3.5% with respect to the mass of the entire liquid components of said slurry, and the slurry contains an organic amine having a mass ratio of 0.5 to 5.0 with respect to water in the liquid components of the slurry. The slurry is used at a pH of 12 or more and at a temperature of from 65 to 95 degrees C.

Abstract: A mechanical device including: (a) a metal workpiece having a working surface for bearing a load, the working surface including a nanometric, adhesive, solid film containing carbon atoms, the film being intimately bonded to the workpiece, wherein the film is intimately bonded to the workpiece on one face of the film, and wherein an opposing face of the film is exposed, for contacting with a lubricant, (b) a contact surface, disposed substantially opposite the working surface; (c) a lubricant, disposed between the working surface and the contact surface, and (d) a mechanism for causing a relative movement between the working surface and the contact surface.

Abstract: An apparatus for processing a magnetic head slider used for a magnetic disk apparatus for performing a magnetic recording/reproducing process in a discoid recording medium. The apparatus for processing a magnetic head slider includes a discoid recording medium used as an abrasive material, a holding unit configured to hold a suspension arm on which a magnetic head slider is disposed, an elevating unit configured to bring the magnetic head slider into contact with the discoid recording medium in a sliding manner by elevating and lowering the discoid recording medium, and a rotating unit configured to rotate the discoid recording medium at a rotation speed lower than a rotation speed upon the magnetic recording/reproducing process.

Abstract: The present invention is directed to provide an apparatus which is capable of continuously and effectively shattering wastes including organic substances and even such wastes as including fat or other doggy substances suspended in a water, without obstructing an operation of the apparatus. The apparatus comprises a cylindrical vertical housing having annular passages partitioned by adjacent two or more substantially concentric cylindrical walls, a water injection device which produces a pressurized water flow so as to supply high-speed water flows tangentially into the annular passages, and a nozzle which is disposed in any one of the cylindrical walls so as to supply a slurry including organic substance particulates into the high-speed water flows and thus ultrafinely shatters the organic granular substances into particulates having the size of a few micrometers by cavitation effect and/or shearing effect produced in the high-speed water flows.

Abstract: Diamond clusters are used as a polishing material of free abrading particles, each being a combination of artificial diamond particles having primary particle diameters of 20 nm or less and impurities that are attached around these diamond particles. The density of non-diamond carbon contained in the impurities is in the range of 95% or more and 99% or less, and the density of chlorine contained in other than non-diamond carbon in the impurities is 0.5% or more and preferably 3.5% or less. The diameters of these diamond clusters are in the range of 30 nm or more and 500 nm or less, and their average diameter is in the range of 30 nm or more and 200 nm or less.

Abstract: A chemical mechanical polishing aqueous dispersion of the invention includes (A) a first water-soluble polymer having a weight average molecular weight of 500,000 to 2,000,000 and including a heterocyclic ring in its molecule, (B) a second water-soluble polymer or its salt having a weight average molecular weight of 1000 to 10,000 and including one group selected from a carboxyl group and a sulfonic group, (C) an oxidizing agent, and (D) abrasive grains, and has a pH of 7 to 12.

Abstract: A method of preparing a low friction diamond surface comprises removing asperities from a surface of a polycrystalline diamond film disposed on a substrate, e.g., by removing not more than about 500 nm (e.g., not more than about 100 nm, 50 nm, 25 nm, or 10 nm) of diamond, on average, from the surface of the film. The removal step can be controlled to preserve depressions in the surface, which can provide useful properties, such as reservoirs for lubrication, which contribute to the low friction properties of diamond films prepared by the methods of the present invention. The diamond films of the invention preferably have an average grain size of about 2000 nm or less (e.g., less than or equal to about 1000 nm, 100 nm, 50 nm, 20 nm or 10 nm), and preferably include fewer than about 2000 asperities per square millimeter of diamond surface, or about 4/mm on a linear basis, as determined using a 2 ?m diameter profilometer stylus tip.

Abstract: A mechanical device for lapping, and a method therefore, the device including: (a) a metal workpiece having a metal working surface; (b) a contact surface, disposed generally opposite the working surface, for moving in a relative motion to the working surface; (c) abrasive particles disposed between the contact surface and the working surface, and (d) a mechanism, associated with the working surface and/or the contact surface, for applying the relative motion, and for exerting a load in a substantially normal direction to the contact surface and the working surface, the contact surface for providing an at least partially elastic interaction with the plurality of abrasive particles, wherein, associated with the contact surface is a particulate additive, and wherein, upon activation of the mechanism, the relative motion under the load causes a portion of the abrasive particles to penetrate the working surface, and wherein the relative motion under the load effects incorporation of a portion of the particulate a

Abstract: The invention relates to a method of manufacturing a semiconductor device (10) with a substrate (11) and a semiconductor body (2) which is provided with at least one semiconductor element and the surface of which is provided with an aluminum layer (3) that is patterned by means of a chemical-mechanical polishing process, the side of the device (10) covered with the aluminum layer (3) being pressed against a polishing pad (5), the device (10) and the pad (5) being moved with respect to each other, a slurry (6) containing an abrasive and having a pH level lower than about 12 being applied between the device (10) and the pad (5), and the polishing process being continued till a sufficient amount of the aluminum layer (3) has been removed. According to the invention, the slurry (6) between the device (10) and the pad (5) is provided with a pH level lower than 5 and the pH level is created using merely an acid the aluminum salt of which dissolves well in the slurry (6).

Abstract: This polishing method and polishing apparatus include: a polishing characteristics measurement step in which electrochemical characteristics of a slurry in relation to a material to be polished are measured; and a preparation step in which the slurry is prepared based on the measured electrochemical characteristics, wherein, in the polishing characteristics measurement step, a slurry is supplied from a slurry supply apparatus 202, and using a sample polishing pad that is formed from the same material as the polishing pad and a sample material to be polished that is formed from the same material as the material to be polished, the electrochemical characteristics are measured both when the sample material to be polished is being polished by the sample polishing pad and when the sample material to be polished is not being polished by the sample polishing pad.

Abstract: A polishing method can safely detach and lift up a workpiece from a polishing surface without carrying out the operation of making the workpiece overhang the polishing surface. The polishing method includes carrying out processing of a surface to be polished of a workpiece by supplying a liquid to a polishing surface while pressing the surface to be polished of the workpiece held by a holding device against the polishing surface and moving the workpiece and the polishing surface relative to each other, attracting the workpiece after the processing to the holding device while supplying the liquid to the polishing surface at a decreased flow rate, thereby detaching the workpiece from the polishing surface, and lifting up the holding device together with the workpiece on confirmation of detachment of the workpiece from the polishing surface and attachment of the workpiece to the holding device.

Abstract: The present invention relates to the reduction or complete prevention of Cu corrosion during a planarization or polishing process. In one aspect of the invention, RF signal is used to establish a negative bias in front of the wafer surface following polishing to eliminate Cu+ or Cu2+ migrations. In another aspect of the invention, a DC Voltage power supply is used to establish the negative bias.

Abstract: A carrier head (100) for a CMP tool, wherein the membrane (108) defining a chamber with a contact surface (102) of the carrier head (100) has a number of integral tubes (110) termining in openings coupled directly to the substrate (106), in addition to a main fluid flow passage (104) coupled to the chamber defined by the membrane (108). In use, during loading and polishing, a vacuum is applied to the main fluid flow passage (104) and the tubes (110) to hold the substrate (106) in flat engagement with the membrane (108) and contact surface (102). In order to unload the substrate (106), fluid pressure is applied to the substrate (106) via the tubes (110), whilst maintaining the application of the vacuum via the main fluid flow passage (104) so as to minimise bending and breakage of the substrate (106).

Abstract: Semiconductor wafers have a front surface, a back surface, a notch, and an edge. A method of polishing a wafer includes polishing at least one of the surfaces and the notch of the wafer using a polishing pad and slurry. At least one surface of the wafer is cleaned of residual slurry. The cleaned surface is grasped by applying a vacuum to the cleaned surface of the wafer using a vacuum chuck. Edge of the wafer is polished using a pad and slurry while the wafer is grasped by the vacuum chuck.

Abstract: An apparatus for the repair and resurfacing of compact discs using a motorized, abrasive surface.

Abstract: A polishing system and a method are presented for uniformly polishing efficiently at a fast rate the surface of a tape-like metallic base material of several hundred meters in length. The polishing system is provided not only with devices for causing the base material to travel continuously and applying a specified tension in the base material but also with a first polishing device for randomly polishing the target surface and a second polishing device for carrying out a final polishing on the target surface in the direction of travel of the base material. Polishing marks are formed in the direction of travel on the target surface by the final polishing.

Abstract: A polishing apparatus comprises a polishing plate (24), an abrasive cloth (25) attached to the surface of the polishing plate (24), a chuck (19) for holding and pressing one surface of a wafer (39) against the abrasive cloth (25), and a circular retaining ring (23) concentrically arranged on the periphery of the chuck (19). The retaining ring (23) is rotatable and vertically movable with respect to the chuck (19), and is pressed against the abrasive cloth (25) during the lapping step. The retaining ring (23) is lifted upward during the final polishing step, thereby preventing lapping grains from being brought into the final polishing stage. Accordingly, lapping and final polishing can be successively conducted using the same polishing head. With this structure, cost cutting of the apparatus can be realized, since lapping and final polishing are successively conducted using the same polishing head without bringing the lapping grains used for lapping into the final polishing stage.

Abstract: The present invention provides a polishing apparatus for polishing a periphery of a substrate. This polishing apparatus includes a rotary holding mechanism configured to hold the substrate horizontally and rotate the substrate, plural polishing head assemblies provided around the substrate, plural tape supplying and recovering mechanisms configured to supply polishing tapes to the plural polishing head assemblies and recover the polishing tapes from the plural polishing head assemblies, and plural moving mechanisms configured to move the plural polishing head assemblies in radial directions of the substrate held by the rotary holding mechanism. The tape supplying and recovering mechanisms are located outwardly of the plural polishing head assemblies in the radial directions of the substrate, and the tape supplying and recovering mechanisms are fixed in position.

Abstract: A rough-polishing method for conducting a rough polishing before mirror-finish polishing on a semiconductor wafer (W) using a polishing apparatus (1) includes a first polishing step for polishing the semiconductor wafer using slurry containing colloidal silica supplied by a slurry supplying unit (4) and a second polishing step for polishing the semiconductor wafer using alkali solution provided by mixing deionized water supplied from a deionized-water supplying unit (5) and alkali concentrate solution supplied by an alkali-concentrate-solution supplying unit (6). The pH value of the alkali solution and polishing time in the second polishing step are determined based on the load current value of the polishing table (2) in the first polishing step.

Abstract: The present invention relates to methods of using amidoxime compositions for cleaning polishing pads, particularly after chemical mechanical planarization or polishing is provided. A polishing pad is cleaned of Cu CMP by-products, subsequent to or during planarizing a wafer, to reduce pad-glazing by applying to the polishing pad surface a composition comprising an aqueous amidoxime compound solution in water.

Abstract: Disclosed is a method for fabricating a fixed abrasive pad in use of a chemical mechanical polishing process. The method includes: forming one or more etching molds providing a plurality of different real contact areas; attaching the etching mold(s) to a roller or press; and forming a fixed abrasive pad using the roller or press, The fixed abrasive pad has a plurality of polishing portions, each having a different real contact area. Especially, the fixed abrasive pad can comprise a low-density polishing portion having a real contact area less than 20% and a high-density polishing portion having a real contact area of 20%˜50%.

Abstract: A soluble abrasive is used to lap workpieces to overcome the problem of embedding and retaining abrasive particles in the workpieces. The soluble abrasives are dissolved from the workpiece even if they become embedded in the workpiece. For example, the abrasives may be dissolved with water and comprise ionic salts. The soluble abrasive has a hardness that is equal to or slightly greater than the hardness of the metal being lapped.

Abstract: A polish pad (120) and platen (130) assembly for use in chemical mechanical polishing of semiconductor devices includes a platen (130) having a grooved or channeled surface (136) which is sealed from the processing environment by an ungrooved portion (131) at the periphery of the platen (130). In addition, the platen (130) includes one or more passageways (132) that provide a pathway to ambient or sub-ambient environment. The combination of the sealing region (131) and the passageway(s) (132) prevent liquids, vapors or other undesirable contaminants from infiltrating between the pad and platen, and also vent trapped air pockets between the pad and platen.

Abstract: A chemical mechanical polishing aqueous dispersion comprises (A) abrasive grains, (B) at least one of quinolinecarboxylic acid and pyridinecarboxylic acid, (C) an organic acid other than quinolinecarboxylic acid and pyridinecarboxylic acid, (D) an oxidizing agent, and (E) a nonionic surfactant having a triple bond, the mass ratio (WB/WC) of the amount (WB) of the component (B) to the amount (WC) of the component (C) being 0.01 or more and less than 2, and the component (E) being shown by the following general formula (1), wherein m and n individually represent integers equal to or larger than one, provided that m+n?50 is satisfied.

Abstract: A polishing slurry for metal comprises an oxidizer, a metal oxide dissolving agent, a metal inhibitor, and water, wherein the metal inhibitor is at least one of a compound having an amino-triazole skeleton and a compound having an imidazole skeleton. The use of the polishing slurry for metal makes it possible to raise the polishing speed sufficiently while keeping the etching speed low, restrain the generation of corrosion of the surface of a metal and dishing, and form a metal-film-buried pattern having a high reliability in the process of formation of wiring of semiconductor devices.

Abstract: A viscoelastic polisher to be used for polishing. The viscoelastic polisher includes a viscoelastic layer provided on a major surface of a base disk and having a hole of a predetermined radius formed in a center portion thereof, and the base disk has a plurality of grooves equiangularly provided in the major surface thereof as extending radially outward from a center portion thereof. This arrangement ensures stable supply of an abrasive liquid, and obviates a need for formation of grooves in the viscoelastic layer.

Abstract: The present invention relates to a method of designing, previewing a natural stone veneer project in its entirety before a single stone is cut; cutting and finishing the edges of a natural veneer stone to form interconnecting finished natural stone veneer components having a weathered appearance, each component having a perimeter of a pre-determined contour and a finished edge.

Abstract: A polishing composition for a hard disk substrate includes alumina particles, silica particles, and water. The volume median diameter of secondary particles of the alumina particles measured by a laser beam diffraction method is 0.1 to 0.8 ?m. The volume median diameter of primary particles of the silica particles measured by transmission electron microscope observation is 40 to 150 nm. The standard deviation in number-basis particle size of the primary particles of the silica particles measured by the transmission electron microscope observation is 11 to 35 nm. The polishing composition for a hard disk substrate can preferably reduce the embedding of alumina abrasive grains into the substrate without impairing the productivity.

Abstract: An object of the present invention is to provide a polishing pad excellent in polishing rate and superior in longevity without generating center slow. Another object of the present invention is to provide a method of manufacturing a semiconductor device with the polishing pad. Disclosed is a polishing pad having a polishing layer consisting of a polyurethane foam having fine cells, wherein a high-molecular-weight polyol component that is a starting component of the polyurethane foam contains a hydrophobic high-molecular-weight polyol A having a number-average molecular weight of 550 to 800 and a hydrophobic high-molecular-weight polyol B having a number-average molecular weight of 950 to 1300 in an A/B ratio of from 10/90 to 50/50 by weight.

Abstract: A polishing pad and a polishing method for polishing a substrate are described. The polishing pad includes a polishing layer and at least two grooves. The grooves form polishing tracks respectively. The polishing tracks collectively construct an even tracking zone. A better polishing uniformity of a substrate surface is achieved with the even tracking zone.

Abstract: The invention is directed to a method for polishing a surface comprising tungsten carbide, comprising contacting a surface comprising tungsten carbide with an oxidizing agent, a polishing component, and a liquid carrier, and abrading at least a portion of the surface to polish the surface. The invention further provides a method for reconditioning a workpiece comprising tungsten carbide. The invention also provides a cutting tool insert having a highly polished surface.

Abstract: Improved slurry compositions comprising a mixture of a first type of particles and a second type of abrasive particles dispersed within an aqueous medium, and abrasive slurry compositions for use chemical mechanical planarization (CMP) processes, particularly abrasive slurry compositions for polishing of sapphire. These abrasive slurry compositions comprise a mixture of a first type of abrasive particles having a hardness that is harder than the surface being polished and a second type of abrasive particles have a hardness that is softer than the surface being polished, particularly mixtures of silicon carbide abrasive particles and silica abrasive particles, dispersed within an aqueous medium.

Abstract: A retaining ring for chemical mechanical polishing is described. The ring has a bottom surface with non-intersecting grooves. Alternating grooves are at opposing angles to one another.

Abstract: A polish pad (40, 42) and platen (50) assembly for use in chemical mechanical polishing of semiconductor devices includes a platen (50) having a vented endpoint window (62, 72, 82) with one or more venting passageways (e.g., 64, 66) and/or a grooved or channeled platen surface (176) to prevent air pressure buildup in the air gap (46) by discharging or venting air through one or more vent pathways (52) formed in the platen to provide a pathway to ambient or sub-ambient environment. The air permeable construction of the vented endpoint window (72) provides pressure relief for the air gap (46) between the pad endpoint window (44) and the vented endpoint window (72), but may also include passages (75, 76) that are filled with an air permeable hydrophobic material which protects the underlying endpoint detection system (30, 32) from contamination during cleaning of the platen endpoint window (72).

Abstract: A grinding method for a wafer having a plurality of devices on the front side, wherein the back side of the wafer is ground by a grinding wheel to suppress the motion of heavy metal in the wafer by a gettering effect and also to maintain the die strength of each device at about 1,000 MPa or more. The grinding wheel is composed of a frame and an abrasive member fixed to the free end of the frame. The abrasive member is produced by fixing diamond abrasive grains having a grain size of less than or equal to 1 ?m with a vitrified bond. A protective member is attached to the front side of the wafer and the wafer is held on a chuck table in the condition where the protective member is in contact with the chuck table. The grinding wheel is rotated as rotating the chuck table to thereby grind the back side of the wafer by means of the abrasive member so that the average surface roughness of the back side of the wafer becomes less than or equal to 0.

Abstract: A composition including an abrasive, a suspension agent, a surfactant, and a lubricant, is provided for removing scratches, hazing, discoloration, and other defects from plastic surfaces. The composition is applied to a surface and used to polish the surface. The defects within the surface are removed without the removal of significant amounts of the material. Accordingly, the present invention removes defects from surfaces without creating optical distortion.

Abstract: Improved slurry compositions comprising silicon carbide particles and alumina particles dispersed within an aqueous medium. Slurry compositions in the form of abrasive slurry compositions for use chemical mechanical planarization (CMP) processes, particularly abrasive slurry compositions for polishing of sapphire, and methods of use.

Abstract: Polishing tools and their methods of manufacture and use are disclosed. In one aspect, a polishing device is provided, including a plurality of polymeric fibers longitudinally arranged and embedded in a polymeric binder, the polymeric binder having a stiffness that is less than a stiffness of the polymeric fibers, and a working end of the plurality of polymeric fibers configured such that tips of the polymeric fibers are oriented to contact a work piece.

Abstract: An object of the invention is to provide a polishing pad which hardly generates a scratch on a surface of a polishing object, and is excellent in planarization property. In addition, an object of the invention is to provide a polishing pad which has a high polishing rate and is excellent in planarization property. In addition, an object of the invention is to provide a polishing pad in which a groove is scarcely clogged with abrasive grains or polishing swarf during polishing and, even when continuously used for a long period of time, a polishing rate is scarcely reduced.

Abstract: A chemical-mechanical nanogrinding process achieves near-zero pole tip recession (PTR) to minimize magnetic space loss of the head transducer to media spacing loss, alumina recession and trailing edge profile variation, and smooth surface finish with minimal smearing across multi-layers of thin films and the hard substrate to meet the requirements of high areal density thin film magnetic heads for hard disk drives (HDD). With a fine chemical mechanical nanogrinding process, PTR can be improved to a mean of about 0.5 nm.

Abstract: A system and method for producing micro-texture on a slider substrate using chemical & mechanical polishing techniques is described. In certain embodiments of the present invention, this is accomplished by a method comprising formulating an abrasive slurry solution of predetermined acidity (or pH value), treating a chemical mechanical polishing pad with the abrasive slurry, disposing magnetic heads on the chemical mechanical polishing pad and lapping and grinding the magnetic heads for a predetermined period of time. In certain embodiment of the present invention the lapping and grinding of the magnetic heads are accomplished using an apparatus comprising an abrasive slurry solution of predetermined acidity (pH value), a chemical mechanical polishing pad treated with the abrasive slurry solution, wherein the magnetic heads are attached to a fixture capable of disposing the heads on the chemical mechanical polishing pad.

Abstract: The inventive method comprises chemically-mechanically polishing a substrate with an inventive polishing composition comprising a liquid carrier and abrasive particles that have been treated with a compound.

Abstract: An application for an apparatus for sharpening a cutting blade includes a source of high pressure water stream capable of cutting steel and a sharpening jig for positioning and holding the cutting blade perpendicular to the high pressure water stream, the sharpening jig provides a mechanism for moving the cutting blade so that a cutting edge of the cutting blade predictably passes beneath the high pressure water.