Abstract: A method and apparatus for filtering a slurry used in a chemical mechanical polishing apparatus is disclosed. Magnets are provided along the piping network between a slurry reservoir and the CMP apparatus. A magnet may also be placed adjacent to the slurry reservoir to prevent iron oxide particles from traveling with the slurry to the CMP apparatus. The magnets attract iron oxide particles from the slurry and remove those particles from the slurry prior to polishing. This reduces the amount of defects caused by the iron oxide particles in the slurry.

Abstract: A chemical mechanical polishing machine and a fabrication process using the same. The chemical mechanical polishing machine comprises a retainer ring having a plurality of slurry passages at the bottom of the retainer ring. The retainer ring further comprises a circular path. By conducting the slurry through the slurry passages and the circular, a wafer is planarized within the chemical mechanical polishing machine.

Abstract: A rotary joint for fluids that provides a completely sealed path for the flow of polishing solution and which permits the supply of electricity to a polished surface detector. The rotary joint of the present invention is essentially made up of a joint block (1) and a rotator assembly (2). To the rotator assembly (2) rotatably held in the joint block (1) is attached a polishing pad shaft (104). Between the joint block (1) and the rotator assembly (2) is formed a seal space closed by a pair of seal units (5, 5), each comprising sealing rings (51, 52) which rotate in relation to each other. A fluid passage (7) continuous via a seal space (50) and running through the joint block (1) and the rotator assembly (2) is formed, and a wiring conduit running from an electric source unit (3) to the polished surface detector on the polishing pad (104) is also formed.

Abstract: A preferred embodiment of a workpiece finishing system impinges a grit and fluid slurry onto a workpiece and then recycles the slurry for subsequent reuse. In another aspect of the present invention, a recovery tank is used for generally settling and concentrating the grit in the slurry, and for separating out a portion of the fluid from the grit. A further aspect of the present invention provides a venturi-type nozzle for expelling the grit and fluid onto a workpiece, wherein the nozzle has a selectively movable inlet thereby varying the slurry concentration properties of the nozzle.

Abstract: A method of manufacturing a semiconductor device using a polishing apparatus is provided. A top ring holding a wafer is arranged on a pad. A polishing chemical liquid supply line for supplying a polishing chemical liquid is arranged above the pad in a direction ahead of rotation with respect to the top ring. Around the center of rotation of the pad, a partition plate having a columnar side surface is arranged. Above the pad on a side which goes away from the top ring when the pad is rotated, a polishing chemical liquid draining mechanism is arranged extending continuously from the partition plate to the outer periphery of the pad. Accordingly, a polishing apparatus is obtained by which the amount of polishing of the surface to be polished of the semiconductor substrate is stabilized and generation of microscratches on the surface to be polished can be suppressed.

Abstract: A slurry feeding apparatus includes closed slurry bottle, piping, wet nitrogen generator, wet nitrogen supply pipe, suction and spray nozzles, temperature regulator, flow rate control valves, slurry delivery pump and controller for controlling the operation and flow rate of the slurry delivery pump. While a wafer is being polished by a CMP polisher, the controller continuously operates the pump. On the other hand, while the polisher is idling, the controller starts and stops the pump intermittently at regular intervals. No stirrer like a propeller is inserted into the slurry bottle, but the slurry is stirred up by spraying the slurry through the spray nozzle.

Abstract: A new method of chemical mechanical polishing using a submerged polishing table is described. A polishing table is provided having a polishing pad thereon wherein the polishing table is fixed within a container. A channel exists between an outer edge of the polishing table and an inner edge of the container. Outlets lie in a bottom surface of the channel. A wafer carrier presses a wafer onto the polishing pad. Slurry is dispensed onto the polishing pad at a high rate wherein the slurry polishes the wafer and wherein the slurry flushes away particles from a surface of the polishing pad into the container and out through the outlets. Even heavy particles such as diamond bits from a diamond-embedded dresser on the polishing pad can be flushed away using the method and polishing table of the invention.

Abstract: A system for supplying a slurry of a liquid containing suspended particles to a semiconductor processing machine, where the slurry is used in processing semiconductor wafers, is disclosed. The system includes a supply of slurry and a delivery subsystem operatively associated with the supply of slurry, the delivery subsystem being configured to deliver slurry to the semiconductor processing machine. The supply typically is configured to provide slurry from a location remote from the semiconductor processing machine to a location proximate the semiconductor processing machine, where the slurry at the location proximate the semiconductor processing machine is unpressurized. The delivery subsystem typically is configured to agitate slurry in the basin by flowing the slurry through the basin, thereby inhibiting the settling of suspended particles in the slurry.

Abstract: A slurry delivery system for use with a polishing machine wherein the slurry delivery system is designed to reduce the incidence of oxidized metals or rust from flowing into a slurry compound used to polish substrates used in the manufacture of disk drives. The slurry delivery system comprises an extended drive shaft made from type 416 stainless steel having a longitudinally extending inner channel Inside of this inner channel is a type 316 slurry feed tube that is used to shield the type 416 stainless steel from a slurry containing corrosive de-ionized water. The drive shaft has a first end connected to a drive motor and a second distal end. Connected to the second distal end is a type 316 stainless steel hub. The hub is surrounded by a urethane slurry distribution plate that has channels cut for allowing slurry to flow.

Abstract: The present invention is an ultrasonic transducer slurry dispensing device and method for efficiently distributing slurry. The present invention utilizes ultrasonic energy to facilitate efficient slurry application in a IC wafer fabrication process to permits reduced manufacturing times and slurry consumption during IC wafer fabrication. In one embodiment a chemical mechanical polishing (CMP) ultrasonic transducer slurry dispenser device includes a slurry dispensing slot, a slurry chamber coupled and an ultrasonic transducer. The slurry chamber receives the slurry and transports it to the slurry dispensing slots that apply slurry to a polishing pad. The ultrasonic transducer transmits ultrasonic energy to the slurry.

Abstract: A first pump collects used slurry which is employed for a CMP technique. A new slurry supply device supplies new slurry having a concentration higher than a concentration of the used slurry, to the used slurry. A sensor measures a concentration of recycled slurry produced by mixing the used slurry with the new slurry. The new slurry supply device stops supplying the new slurry, in a case where the concentration which the sensor measures is equal to or above a predetermined value. A second pump supplies recycled slurry onto a polishing stage, after the used slurry is completely recycled.

Abstract: A chemical mechanical polishing machine and a fabrication process using the same. The chemical mechanical polishing machine comprises a retainer ring having a plurality of slurry passages at the bottom of the retainer ring. The retainer ring further comprises a circular path. By conducting the slurry through the slurry passages and the circular, a wafer is planarized within the chemical mechanical polishing machine.

Abstract: A CMP slurry pumping system which uses the slurry pump inlet pressure as input to the pump controller, and adjusts pump speed to account for variations in inlet pressure.

Abstract: The first present invention provides an apparatus for activating a polishing liquid including polishing particles and hydrogen peroxide for carrying out a chemical mechanical polishing method to a surface of a wafer to be polished, wherein the apparatus comprises an ultraviolet ray irradiation system for an irradiation of an ultraviolet ray to the polishing liquid.

Abstract: A method for polishing radially expandable surgical stents is disclosed where fluid abrasive media M flows over surfaces of the stent 10 causing the surfaces of the stent 10 to be polished and streamlined. The stent 10 is temporarily provided with cylindrical support ends 20, which are not radially expandable to support the stent 10 during the polishing process. An interior polishing fixture 100 is provided which has cylindrical chambers 135 therein adapted to receive a stent 10 therein. Fluid abrasive media M then flows into bores 108 in the fixture 100 leading to the cylindrical chambers 135 and adjacent the inner diameter surfaces of the stent 10. Surfaces of the stent 10 forming the outer diameter are polished by placing the stent 10 within an exterior polishing fixture 200 which has a cylindrical recess 220 therein.

Abstract: Various apparatus for CMP processing of workpieces are provided. In one aspect, a CMP tool is provided that includes a polish pad for polishing a workpiece and a head assembly for holding the workpiece during polishing. A fluid dispenser is also provided for dispensing a fluid to process the workpiece. The fluid dispenser has a housing and a tube coupled to the housing for dispensing a semiconductor processing fluid. The tube has a first end that is operable to move from a first elevation to a second elevation. A first shape memory member is provided that has a first end coupled to the housing and a second end coupled to the tube. The shape memory member is operable to deform in response to a thermal stimulation to selectively move the tube from the first elevation to the second elevation. The tool provides selective dispersal of processing fluids on a CMP polish pad or other processing surface is before, during and after CMP or other processes.

Abstract: A fluid collection apparatus having an accumulator for contacting a polishing surface of a polishing pad and collecting fluid from the polishing pad, a reservoir for receiving fluid from the accumulator, and a volume maintainer for maintaining a set volume of fluid in the reservoir.

Abstract: There is disclosed a polishing machine capable of flattening a wafer surface uniformly. The machine can modify the flatness of the surface during polishing. The machine has an index table and a polishing head 18. The table attracts the wafer to be polished such that the wafer faces upward. The table rotates to the primary polishing station. The polishing head has a pressure application cylinder 21 and a base plate 22. The cylinder is held to a carrier at a given angle. The base plate holds polishing cloth 24 and is mounted to the cylinder so as to be swingable in three dimensions. The cloth touches the wafer surface and rotates at a high speed, thus flattening it. At the second polishing station, polishing cloth attached to another polishing head touches the wafer surface and rotates at a high speed, thus finally polishing the wafer surface.

Abstract: A managing system for managing slurry, which is supplied to a wire saw. Slurry is prepared in a preparing tank and sent to the wire saw and used to cut workpieces. After usage for cutting workpieces, the slurry is sent to a separating apparatus from the wire saw. The separating apparatus separates impurities from the used slurry to recover a mixture of recyclable dispersing liquid and abrasive grains from the used slurry. The recovered mixture is returned to the preparing tank. The recovered mixture is mixed with fresh abrasive grains and dispersing liquid in the preparing tank to prepare slurry. The property (specific gravity and viscosity) of the slurry in the preparing tank is detected. The amount of fresh abrasive grains and dispersing liquid supplied to the preparing tank is adjusted in accordance with the detection results. Accordingly, slurry having properties that are optimal for the cutting of workpieces is prepared.

Abstract: The bottom of each collection groove for collecting a used abrasive slurry and a rinsing solution is formed like the letter V, an exhaust port is formed at the lowest position of the bottom of the groove, the collection pipe of a slurry supply unit and the collection pipe of a rinsing solution supply unit are connected to the exhaust port, and the collection pipe of the rinsing solution exhaust unit is connected to a suction pump for forcedly discharging the rinsing solution by suction.

Abstract: An apparatus is provided with a wafer polishing tool, a source of slurry, and a source of low pressure de-ionized water. The slurry is supplied to the tool for chemical-mechanical planarization. Periodically, the slurry source is shut off and the de-ionized water is used to flush the apparatus. The desired safe low pressure of the de-ionized water may be maintained by opposed one-way check valves. The flushing system prevents the slurry from clogging or becoming stagnant, and prevents valves and pumps within the apparatus from malfunctioning. Moreover, the low pressure de-ionized water will not contaminate the higher pressure slurry even in the event of a system malfunction.

Abstract: By polishing an optical device such as .beta.-BBO crystals using a liquid suspension comprising a fine powder of silicon oxide and a liquid lubricant of saturated hydrocarbon, satisfactory mirror face polishing can be applied to the optical device, without deteriorating the surface property while reducing occurrence of fine optical defects.

Abstract: A slurry providing system, located between a main slurry providing system and a CMP machine, includes a providing barrel, which can either be used as a buffer tank to provide slurry to the CMP machine with interruption, or as an independent backup tank for store slurry. The providing barrel also includes an impeller to stir slurry to prevent slurry deposition, and a liquid level sensor to monitor slurry level. The slurry providing system further includes a pump to continuously provide slurry from the providing barrel when the main slurry providing system is down. There is a pressure-regulating valve between the slurry providing system and the CMP machine.

Abstract: A surface treating device is provided for rotating a primary surface treating arrangement supplied with a surface treating material relative to a working surface. A driving mechanism is provided for rotating the primary surface treating arrangement including a driven output tube operably connected to the primary surface treating arrangement. In the preferred embodiment, an auxiliary surface treating arrangement is spaced inwardly of the output tube and is non-rotatably mounted on the driving mechanism. The auxiliary surface treating arrangement includes a manually actuated pump slidably mounted relative to the output tube for controllably delivering a supply of the surface treating material to the primary surface treating arrangement.

Abstract: A portable slurry distribution system comprising a first liquid tank containing a first liquid; a second liquid tank containing a second liquid; the first and the second liquid tanks being fluidly connected to a product mixing tank for receiving and mixing the first and the second liquids into a slurry; the product mixing tank being fluidly connected to a valve box having a valve for receiving the slurry; a means connected to the valve for distributing the slurry to a tool; and wherein the first liquid tank, the second liquid tank and the product mixing tank are on a wheeled cart.

Abstract: A chemical-mechanical polishing station comprises a polishing table that has concentric rings. The rings are separated from each other by a small gap and all rings are capable of rotating in the same prescribed direction. A polishing pad is mounted on top of each ring, and a delivery tube is positioned at a distance above the polishing pads. The delivery tube further includes a tube handle and a tube surface, and the tube surface has a plurality of holes drilled in it for delivering slurry to the polishing pad surface. Each concentric ring of the polishing table is able to rotate such that all the rings have the same tangential polishing speed. Therefore a wafer surface can be more uniformly polished. Moreover, material having different density, roughness and chemical composition can be chosen to fabricate the polishing pads so that an even better polishing result can be obtained.

Abstract: A chemicomechanical polishing (CMP) apparatus for polishing a semiconductor wafer of the present invention includes a polishing pad and a wafer carrier disposed above the pad. A slurry feed port is positioned upstream of, but in the vicinity of, the wafer carrier in the direction of rotation of the polishing pad. Slurry is fed to the wafer supported by the wafer carrier via the slurry feed port. A slurry removing device is positioned downstream of the wafer carrier in the above direction. A conditioning mechanism for conditioning the pad is interposed between the wafer carrier and the slurry removing device.

Abstract: A polishing plant includes a polishing apparatus having a top ring for holding a workpiece and a turn table for polishing a surface of the workpiece held by the top ring. A cleaning apparatus has cleaning machines for cleaning the workpiece polished by the polishing apparatus. At least one drainage pipe connected to the polishing apparatus discharges a waste liquid from the polishing apparatus, and at least one drainage pipe connected to the cleaning apparatus to discharges a waste liquid from the cleaning apparatus are provided as separate plural of drainage pipe lines, depending on the type of waste liquid. By use of the polishing plant of the present invention, treatment waste liquids can be efficiently conducted.

Abstract: A slurry recycle process for use in free-abrasive machining operations such as for wire saws used in wafer slicing of ingots, where the used slurry is separated into kerf-rich and abrasive-rich components, and the abrasive-rich component is reconstituted into a makeup slurry. During the process, the average particle size of the makeup slurry is controlled by monitoring the condition of the kerf and abrasive components and making necessary adjustments to the separating force and dwell time of the separator apparatus. Related pre-separator and post separator treatments, and feedback of one or the other separator slurry output components for mixing with incoming used slurry and recirculation through the separator, provide further effectiveness and additional control points in the process.

Abstract: A chemical mechanical polishing apparatus comprises a delivery system for supplying a slurry, wherein the slurry includes suspended particles and at least one acoustic element, connected to the delivery system, the acoustic element generating sound waves for agitating the slurry and maintaining the particles in suspension.

Abstract: A chemical-mechanical polishing (CMP) apparatus includes a filtering apparatus for filtering slurry. The filtering apparatus includes an input aperture located at the top of the filter housing and connected to a slurry supplying machine. An output aperture located at the side of the filter housing is connected to a polishing pad. The filtering apparatus also includes a filter attached to the top of the filter housing and a stirring objected located below the filter. A stirrer is located below the filter housing for driving the stirring object without a mechanical contact. The stirring object is preferably bar-shaped and enclosed with PTFE.

Abstract: A slurry recycling system for a CMP apparatus includes a flow path through which a slurry used in the CMP apparatus flows. A first filter is disposed in the flow path for filtering out foreign matter of a particle size of more than 0.5 microns mixed in said slurry. A second filter is preferably disposed in the flow path at a location upstream of and away from the first filter for filtering out foreign matter of a particle size of more than 10 microns mixed in said slurry. Preferably, provisions are made for a concentration adjuster for adjusting the concentration of abrasives in said slurry to substantially an initial value before use, and a pH adjuster for adjusting the pH of said slurry to substantially an initial pH value before use.

Abstract: An apparatus is provided with a wafer polishing tool, a source of slurry, and a source of low pressure de-ionized water. The slurry is supplied to the tool for chemical-mechanical planarization. Periodically, the slurry source is shut off and the de-ionized water is used to flush the apparatus. The desired safe low pressure of the de-ionized water may be maintained by opposed one-way check valves. The flushing system prevents the slurry from clogging or becoming stagnant, and prevents valves and pumps within the apparatus from malfunctioning. Moreover, the low pressure de-ionized water will not contaminate the higher pressure slurry even in the event of a system malfunction.

Abstract: A mixture of water and glass beads is ejected to a root of a gear which has been cut to form gear teeth. The glass beads are oriented so as to be ejected to the root, and the glass beads and the water impart compressive stresses to the surface of the root and grind the surface of the root.

Abstract: A media assist and gaseous fluid flow distribution system for a cryogenic deflashing machine. Dry-nitrogen or other dry gas is supplied to the media assist distribution system of the present invention in order to supply a cryogenic deflashing machine with gas fluid flow. The gaseous nitrogen is distributed into the interior of the cryogenic deflashing chamber as well as serving to propel deflashing media shot into a throw wheel impeller. The throw wheel impeller then propels the media into the cryogenic deflashing chamber to deflash plastic, metal, or other appropriate work pieces. The gas distribution portion of the present invention also supplies a blast of dry nitrogen against the door to ensure that debris collecting nearby is directed towards the drain of the cryogenic deflashing chamber and the media/flash separator. Via the gaseous distribution system of the present invention, the amount of media required for impact deflashing is greatly reduced.

Abstract: A method for polishing radially expandable surgical stents is disclosed where fluid abrasive media M flows over surfaces of the stent 10 causing the surfaces of the stent 10 to be polished and streamlined. The stent 10 is temporarily provided with cylindrical support ends 20, which are not radially expandable to support the stent 10 during the polishing process. An interior polishing fixture 100 is provided which has cylindrical chambers 135 therein adapted to receive a stent 10 therein. Fluid abrasive media M then flows into bores 108 in the fixture 100 leading to the cylindrical chambers 135 and adjacent the inner diameter surfaces of the stent 10. Surfaces of the stent 10 forming the outer diameter are polished by placing the stent 10 within an exterior polishing fixture 200 which has a cylindrical recess 220 therein.

Abstract: A powder beam working system for working a surface to be worked of an object to be worked by dispersing fine particles in high-pressure gas and projecting a solid-gas two-phase flow thus produced to the surface of the object to be worked which comprises means which temporarily stores the fine particles, a dispersing chamber which forms a portion of a flow path for the high-pressure gas and sending means which sends out the fine particles stored in the storing means into the dispersing chamber at a predetermined rate as the fine particles are in a solid phase state, thereby being capable of adjusting a flow rate of the produced solid-gas two-phase flow and an amount of the fine particles contained in the solid-gas two-phase flow easily and individually.

Abstract: A method of fabricating a silicon semiconductor discrete wafer is disclosed that assures excellent finishing accuracy and productivity. The method for fabricating a discrete wafer having a double-layer structure including an impurity diffused layer at one side and an impurity non-diffused layer at the opposite side includes cutting a wafer, having one of the impurity diffused layers formed on both surfaces of the silicon semiconductor wafer and having an oxide film formed on the surface of the diffused layer, into two pieces at the center of thickness with an ID saw slicing machine. Then, both surfaces of the cutting surface are ground to a predetermined thickness with a surface grinding machine, and the grinding surfaces are lapped with abrasive grains having a count of at least #2000 and no more than #6000. The processing surface is wet-etched as the final processing.

Abstract: A chemical mechanical polishing apparatus for controlling slurry distribution is disclosed. The slurry flowing through the mesh before transferring to the polishing pad, the mesh being used to distribute the slurry onto surface of the polishing pad. There are different netting densities over the mesh, achieving the purpose of controlling slurry distribution.

Abstract: The first pipe 34 delivers the first solution 21 containing polishing particles. The second pipe 37, containing a liquid mass flow unit 36, delivers the second solution containing a chemical substance. The outlet port of the first pipe and the outlet port of the second pipe are connected to one end portion of the third pipe 31. The third pipe has the other end portion with an inner diameter almost equal to the inner diameter of its one end portion. The first and second solutions introduced into the third pipe are mixed in the third pipe to generate a polishing liquid. The generated polishing liquid is supplied from the other end portion of the third pipe onto a polishing pad 13 to polish a semiconductor wafer 16.

Abstract: A grit tank (1), the inside of which is partitioned into an upper chamber (2), intermediate chamber and lower chamber (5), the intermediate chamber being partitioned into a left intermediate chamber (3) and a right intermediate chamber (4), is connected to a transport pipe (16) via a discharge port (9) of the lower chamber (5). The intermediate chambers (3, 4) are respectively communicated with the upper chamber (2) and the lower chamber (5) via a left upper communicating port (6) and a right upper communicating port (10) and also via a left lower communicating port (8) and a right lower communicating port (12). The communicating ports are respectively provided with a left filling valve (7), right filling valve (11) and changeover type feed valve (13).

Abstract: A filtering device used to filter the slurry is disclosed, including a crossflow fan within the filter housing, and a driving mechanism relative to the crossflow fan under the filter housing to drive the crossflow fan spinning to agitate the slurry in the filter housing, so as to prevent the particles in the slurry from adhering to the surface of the filter. The filtering device further includes a spoiler between the crossflow fan and the filter, so that larger particles remain circulating somewhere between the tip of the spoiler and the crossflow fan, instead of flowing to the filter, to prolong the lifetime of the filter.

Abstract: Substrates to be used in manufacturing hard disks are polished in a two-step process entailing a coarse and fine polishing in a single polishing machine. The use of this method and apparatus eliminates the need for two separate polishing machines and for transferring the disks from one polishing machine to another. Furthermore, the overall quality of hard disk substrates polished by this method and apparatus, including smoothness, flatness and edge roll-off, is superior to that achieved by the prior art.

Abstract: A grinding method includes a grit sticking step and a grinding step. In the grit sticking step, grit particles are stuck in a first tool by contacting the first tool with a second tool which is harder than the first tool, rotating the first tool and the second tool, and feeding the grit to the contacting surface between the first tool and the second tool. In the grinding step, the workpiece is ground by contacting the first tool with the workpiece and rotating the first tool or the workpiece.

Abstract: A filter media for physically separating agglomerations of abrasive particles from a chemical-mechanical polishing (CMP) process slurry stream. The media is provided as being formed of at least one fabric sheet having a first and second surface defining a first thickness dimension of the sheet therebetween, with the fabric being woven of polymeric monofilament fibers. In service, the slurry stream is supplied to the first side of the filter media, and is passed through the media to the second side thereof such that at least a substantial portion of the agglomerations of abrasive particles are retained on the first side of the media.

Abstract: Disclosed is a blade cover in a cutting apparatus comprising a chuck table for holding a workpiece to be cut and cutting means for cutting the workpiece, which comprises a spindle having a rotary blade detachably attached thereto and a spindle housing for rotatably holding the spindle. The blade cover is fixed to the spindle housing on its front side, and it comprises: a rear nozzle assembly for flushing water to the rotary blade on its rear side; a front nozzle assembly for flushing water to the rotary blade on its front side; and blade detecting means for detecting the condition of the rotary blade. The front nozzle assembly is adapted to be put selectively in operative or inoperative position, and the blade detecting means is adapted to be put selectively in operative or inoperative position in unison with the front nozzle assembly. With this arrangement the rotary blade can be changed readily.

Abstract: A method for cutting an ingot with a wire. The method includes the steps of moving a wire in a lengthwise direction and contacting an ingot with the moving wire. The method also includes the step of supplying an abrasive slurry containing cutting oil and abrasive particles having an average diameter of about 13 .mu.m to about 15 .mu.m to the ingot when the ingot and the wire are contacting. This results in the ingot being cut with the wire and abrasive particles.

Abstract: An apparatus for polishing a semiconductor wafer is provided comprising a wafer carrier to provide a force against a wafer and a rotating polishing pad during the polishing operation and a polishing slurry distributor device disposed to provide a spray of the slurry on the polishing pad. The wafer is polished using less slurry than a conventional polishing apparatus while still maintaining the polishing rates and polishing uniformity of the prior art polishing apparatus. A preferred spraying means is a closed elongated tube having a plurality of openings which tube is positioned over at least one-half the diameter of the polishing pad and a polishing slurry under pressure is directed onto the surface of the pad, preferably in a substantially transverse spray stream.

Abstract: A slurry filtration system for supplying a slurry to a polisher to perform a chemical mechanical polishing process. The system comprises a first three-way valve, to receive the slurry supplied from an external system; a slurry pump, to control the slurry flowing from the first three-way valve, and to maintain a circulating state of the slurry within the circulating system after the chemical mechanical polishing process comes to a stop; a slurry filter, to filter a plurality of large size particles in the slurry pumped from the slurry pump; a second three-way valve, to supply the slurry flowing from the filter to the polisher; and a transportation pipe, connecting between the first and the second three-way valves to transport the slurry from the second three-way valve back to the first three-way valve when the polishing process has stopped.

Abstract: A method and an apparatus of uninterrupted slurry supply. A plurality of polishers are provided. A slurry supply system comprises a slurry supply source, a plurality of valve boxes having a corresponding number as the polishers, a plurality of pipes to connect the valve boxes and the slurry supply source and the valve boxes and the polishers, a plurality of bypasses to connect between an inlet and an outlet of each of the valve boxes, and a plurality elbow type manually controlled three-way valve at a plurality of joints of the pipes and the bypasses. A slurry is supplied from the slurry supply source. A flowing direction of the slurry is selected by adjusting the three-way valve to supply the polishers for polishing.