Abstract: Embodiments of the present invention generally relate to an improved sanding apparatus for minimizing scoring of drywall and other sensitive finishes. In one embodiment of the present invention, a sanding apparatus comprises a flexible, resilient core having a top and bottom sanding surface, a first and second side sanding surface, and a first and second non-sanding surface, each disposed at an angle with respect to the top sanding surface and bottom sanding surface, respectively, and an abrasive aggregate composition disposed on the top sanding surface, bottom sanding surface and the first and second side sanding surfaces, wherein each of the first and second non-sanding surfaces are free of an abrasive aggregate composition.

Abstract: An abrasive article includes a polymer matrix and abrasive grains dispersed in the polymer matrix, wherein the abrasive article has a void volume of at least 50%. The polymer matrix is polymerized from a monomer including at least one double bond.

Abstract: A grinding method for a wafer having a mark indicating the crystal orientation. The grinding method includes a first grinding step for grinding the upper surface of the wafer by rotating a chuck table holding the wafer thereon, rotating a grinding ring, positioning the grinding ring so that the grinding ring is passed through the center of the wafer, and feeding the grinding ring in a direction perpendicular to the chuck table; a wafer positioning step for positioning the upper surface of an outer circumferential portion of the wafer directly below the locus of rotation of the grinding ring; and a second grinding step for grinding the upper surface of the wafer by first stopping the rotation of the chuck table so that the mark indicating the crystal orientation of the wafer held on the chuck table is pointed in a predetermined direction, next feeding the grinding ring in the direction perpendicular to the chuck table, and next relatively moving the chuck table and the grinding ring in parallel.

Abstract: A wafer grinding and tape attaching apparatus and method, the method includes providing a wafer to a chuck table, grinding a back side of the wafer, providing a wafer ring having dicing tape and attaching the dicing tape to the back side of the ground wafer.

Abstract: An apparatus for manufacturing a liquid crystal display (LCD) device includes a table receiving an LCD panel thereon, a first grinding part grinding a surface of the LCD panel to a first surface roughness, a second grinding part grinding the surface of the LCD panel grinded to the first surface roughness to a second surface roughness, wherein the second surface roughness is smoother than the first surface roughness, and a polishing part polishing the surface of the LCD panel which is grinded to the second surface roughness.

Abstract: A method of polishing and coloring concrete surfaces using a dry concrete grinding process which includes locking in dye colors by applying the dye to the cementicious surface mid way during a series of grinding steps using sequentially finer grit, and then applying a sealer after the dye has dried and continuing the grinding process with sequentially finer polishing grits after the sealer has dried and hardened. A second coat of sealer is then applied at the end of the grinding process. In a presently preferred embodiment, the dye is applied after grinding with a grit of substantially 400 grit, the sealer is applied after the dye is dry and grinding is continued up to about 3000 grit after the first coat of sealer dries. Lastly, a second coat of sealer is applied.

Abstract: A sander with a face plate, a porous abrasive pad coupled with the face plate for sanding a surface, and a vacuum coupled with at least a portion of the pad. The pad has a thickness or storage capacity sufficient to temporarily retain at least a portion of particles removed from the surface. The vacuum is configured to suck at least a portion of the particles removed from the surface.

Abstract: In a water jet processing method, when a nozzle adapted to emit water jet is moved relatively to a substrate to form a second cut line intersecting a first cut line, the relative travel speed of the nozzle is set to a second speed lower than a first normal speed by about 1/5 to 1/20 at least in a section anteroposterior to the intersection. Delay-inclination of a front edge of the second cut line is eliminated as much as possible to thereby prevent the occurrence of an insufficient processing area.

Abstract: The present invention generally relates to an edge deletion module positioned within an automated solar cell fabrication line. The edge deletion module may include a grinding wheel device for removing material from edge regions of a solar cell device and cleaning the edge regions of the solar cell device after removing the material. The edge deletion module may also include an abrasive element, a portion of which is ground as it is periodically, laterally advanced toward the grinding wheel device. A controller is provided for controlling the operation and function of various facets of the module.

Abstract: The invention relates to a method of manufacturing a surgical instrument having a rotatable shaft 2 and a working part 1 disposed thereon, the working part having at least one cutting edge, wherein the shaft 2 and the working part 1 are made of oxide ceramics, characterized in that for the manufacturing of the contour of the instrument, a rough grinding using a grinding tool having a grain size between 40 ?m and 110 ?m is performed, and subsequently, a fine grinding of the cutting edges using a grinding tool having a grain size between 20 ?m and 50 ?m performed.

Abstract: In an apparatus at a carding machine for grinding a clothing drawn onto a rotating roller, having a carrying device with at least one grinding element, the carrying device is attached to the carding machine. In order to make it possible, by means that are simple in terms of construction and installation, to reduce the preparation time, the grinding device with the at least one grinding element is interchangeable with one of a plurality of cover elements and/or work elements associated with the roller.

Abstract: A method can effectively eliminate a surface level difference (irregularities) in a film formed on an object without producing scratches in a surface of the film, and can polish and remove the film into a flat surface with greatly increased productivity. The method comprises carrying out a first polishing step by pressing a polishing pad of a polishing device, having a diameter which is smaller than the radius of the object, against the surface of the object at a first pressure while moving the polishing pad and the object relative to each other at a first relative speed. The first polishing step is terminated at a point in time when a surface level difference in the object is eliminated to a targeted level.

Abstract: The invention relates to a process for producing a semiconductor wafer by double-side grinding of the semiconductor wafer, in which the semiconductor wafer is simultaneously ground on both sides, first by rough-grinding and then by finish-grinding, using a grinding tool. The semiconductor wafer, between the rough-grinding and the finish-grinding, remains positioned in the grinding machine, and the grinding tool continues to apply a substantially constant load during the transition from rough-grinding to finish-grinding. The invention also relates to an apparatus for carrying out the process and to a semiconductor wafer having a local flatness value on a front surface of less than 16 nm in a measurement window of 2 mm×2 mm area and of less than 40 nm in a measurement window of 10 mm×10 mm area.

Abstract: A wafer processing method for processing a wafer (20) having bumps (B) formed on a front surface (21) comprises the steps of: holding on a table (51), a bump region-conforming member (40) that has an outer shape conforming only to a bump region (25) where said bumps are formed in the wafer; forming a resin layer (29) by applying resin around the bump region-conforming member up to a thickness equal to or greater than that of the bump region-conforming member; grinding the bump region-conforming member along with the resin layer to a predetermined thickness; removing the bump region-conforming member from the table to form a concave part (45) in the resin layer; applying a film (11) on the front surface of the wafer; and disposing the wafer in the concave part of the resin layer and holding the wafer on the table so that a back surface (22) of said wafer faces upward. After that, the back surface of the wafer can also be ground.

Abstract: A method of manufacturing a ferrule assembly. The method including first and second polishing operations. The first polishing operation including polishing only the end face of a ferrule of an assembly. The second polishing operation including polishing only the optical fiber of the assembly.

Abstract: In a wafer processing method, rough grinding using a first grinding stone is divided into first and second steps. In the first step, a wafer is processed into a concave shape at a first transfer rate with a reinforcing rib area slightly left. Thereafter, as primary rough grinding in the second step, the grinding stone is positioned slightly on the inner circumferential side and the wafer is further processed into the concave portion at a second transfer rate faster than the first transfer rate. Since the first transfer rate is suppressed to a rate not to cause a burst chipping, a burst chipping resulting from the second step fast in the processing rate to ensure productivity will occur at the stepped edge portion on the inside of the reinforcing rib area surface. Thus, the flatness of the reinforcing rib area can be ensured.

Abstract: A method of grinding a wafer, including: a wafer holding step for holding a wafer on a conical holding surface of a chuck table having the holding surface; a rough grinding step for performing rough grinding of the wafer held on the holding surface of the chuck table by positioning a grinding surface of a rough grinding wheel at a predetermined inclination angle relative to the holding surface of said chuck table, and rotating the rough grinding wheel; and a finish grinding step for performing finish grinding of the wafer by positioning a grinding surface of a finish grinding wheel in parallel to the holding surface of the chuck table, and rotating the finish grinding wheel in a grinding region of the grinding wheel in a direction toward the vertex of the contact angle between the grinding surface of the finish grinding wheel and the surface to be ground of the wafer.

Abstract: The sensitivity of the ABS shape of a suspension mounted slider to temperature variations can be greatly reduced if the backside of the slider is lapped to a smooth convex contour that is similar to the ABS shape, rather than to a planar shape, prior to mounting the slider on the suspension. When the backside surfaces of sliders are shaped in this manner, the size of changes in the crown height of the ABS shape due to temperature variations are greatly reduced and the ABS shapes are distributed more tightly, thereby increasing disk drive reliability.

Abstract: The substrate processing apparatus relating to the present invention comprises a polishing section where wafers are sequentially arranged, and that has multiple polishing platens for polishing a metal film on the wafer surface in stages. The wafers are simultaneously conveyed between the polishing platens by a rotating head mechanism. Further, the wafers polished by the polishing platen for the final stage polishing are sequentially conveyed to a cleaning section and are cleaned. The wafers from the polishing section to the cleaning section are conveyed by a load-unload unit, a post-polishing wafer reversal unit and wet robots. Then, the operation of each part is controlled by an apparatus controller to start the cleaning processing of the polished wafers by the polishing platen for the final stage polishing within a predetermined time period from the completion of polishing by the polishing platen for the final stage polishing.

Abstract: A wafer grinding machine and a wafer grinding method are disclosed. A barrier (60) is arranged around a holding unit (29) to hold at least a wafer (40) with a film (11) attached on the front surface (41) thereof and with the back surface (42) thereof directed upward. The upper surface (61) of the barrier unit is ground to the position between the back surface of the wafer held by the holding unit and the boundary between the wafer and the film. Then, the wafer is ground while being held with the back surface thereof up by the holding unit. As a result, the film is prevented from coming off from the wafer at the time of grinding the back surface of the wafer. Further, when the wafer is ground, a fluid may be supplied into the gap between the barrier unit and the outer peripheral portion of the wafer held by the holding unit.

Abstract: A polishing system and a method are presented for uniformly polishing efficiently at a fast rate the surface of a tape-like metallic base material of several hundred meters in length. The polishing system is provided not only with devices for causing the base material to travel continuously and applying a specified tension in the base material but also with a first polishing device for randomly polishing the target surface and a second polishing device for carrying out a final polishing on the target surface in the direction of travel of the base material. Polishing marks are formed in the direction of travel on the target surface by the final polishing.

Abstract: A robot system and method for the repair and/or inspection of cast surfaces in an automated comprising a robotic manipulator of at least 4 degrees of freedom and a gripping mechanism which allows taking a repair device from a tool holder rack located at one of its sides and moving it through a defined path to a repair and inspection area, where a repair process will be carried out in a sequential and programmed way to a number of cast faces to be defined. Additionally, the system allows carrying out an inspection process of the surfaces in a sequential and programmed way through the use of a vision system by taking from a tool holder rack or carrying an advanced vision system for the inspection of surfaces.

Abstract: A method for processing a work-piece is disclosed herein. The method includes the step of removing material from a work-piece to a predetermined depth with a tool that changes size. The method also includes the step of passing the tool across the work-piece in one or more passes during the removing step such that a cutting depth into the work-piece changes during a particular pass. Each pass is defined by a pass depth. The method also includes the step of maintaining a substantially constant chip thickness during the removing step. The method also includes the step of selectively maximizing one of a feed rate and a pass depth of material removal at the expense of the other during the removing step to minimize the time of the passing step.

Abstract: Methods for making polishing tools and associated tools are disclosed. In one aspect, a method of making a polishing tool is provided. Such a method may include truing a working surface of a nano-diamond impregnated substrate. The method may further include forming asperities on the working surface with a polycrystalline diamond dresser, where the asperities have a height to distance ratio of from about 1:5 to about 5:1 and where the average asperity diameter is less than about 175 ?m.

Abstract: Method for manufacturing improved contact surfaces, particularly contact surfaces in rolling bearing components such as rings or rolling bodies, is disclosed. The method subjects a surface of the rolling bearing component to a hard turning machining operation for forming by means of a hard turning tool a rolling or sliding contact surface. The hard turned surface is subjected to a finishing operation to remove the basic turning groove structure in a light machining way such that micro-pockets created in the hard turning operation remain. The hard turning tool during the hard turning machining operation is subjected to a vibration, substantially in the longitudinal direction of the tool, thereby creating in a controlled manner in the hard-turned surface a number of indentations, which are substantially arc-shaped in cross-sectional direction, prior to the finishing operation. Indentations improve lift-off and lubricating properties during later operation of the rolling bearing.

Abstract: A polishing apparatus can supply a polishing liquid uniformly and efficiently to a surface to be polished of a workpiece. The polishing apparatus includes a polishing table having a polishing surface, and a top ring for holding a semiconductor wafer and pressing the semiconductor wafer against the polishing surface. The polishing apparatus also includes a polishing liquid supply port for supplying a polishing liquid to the polishing surface, and a moving mechanism for moving the polishing liquid supply port to distribute the polishing liquid uniformly over an entire surface of the workpiece due to relative movement of the workpiece and the polishing surface.

Abstract: A rough-polishing method for conducting a rough polishing before mirror-finish polishing on a semiconductor wafer (W) using a polishing apparatus (1) includes a first polishing step for polishing the semiconductor wafer using slurry containing colloidal silica supplied by a slurry supplying unit (4) and a second polishing step for polishing the semiconductor wafer using alkali solution provided by mixing deionized water supplied from a deionized-water supplying unit (5) and alkali concentrate solution supplied by an alkali-concentrate-solution supplying unit (6). The pH value of the alkali solution and polishing time in the second polishing step are determined based on the load current value of the polishing table (2) in the first polishing step.

Abstract: The invention relates to a method for producing a semiconductor wafer with a polished edge, said method comprising the following steps: a polishing of at least one side of the semiconductor wafer, and a polishing of the edge of the polished semiconductor wafer, wherein the edge is polished in the presence of a polishing agent by means of a polishing cloth containing fixed abrasive.

Abstract: A chemical mechanical polishing aqueous dispersion comprises (A) abrasive grains, (B) at least one of quinolinecarboxylic acid and pyridinecarboxylic acid, (C) an organic acid other than quinolinecarboxylic acid and pyridinecarboxylic acid, (D) an oxidizing agent, and (E) a nonionic surfactant having a triple bond, the mass ratio (WB/WC) of the amount (WB) of the component (B) to the amount (WC) of the component (C) being 0.01 or more and less than 2, and the component (E) being shown by the following general formula (1), wherein m and n individually represent integers equal to or larger than one, provided that m+n?50 is satisfied.

Abstract: There is provided a double-side polishing method for a wafer of sandwiching a wafer held in a carrier between upper and lower turn tables each having a polishing pad attached thereto and simultaneously polishing both surfaces of the wafer while supplying a slurry to a space between the upper and lower turn tables from a plurality of slurry supply holes provided in the upper turn table, wherein a polishing amount at an outer peripheral portion of the wafer to be polished is adjusted and outer peripheral sag of the wafer is suppressed by supplying the slurry in such a manner that an amount of the slurry supplied from the slurry supply holes provided on an outer side relative to the center of rotation of the upper turn table becomes larger than an amount of the slurry supplied from the slurry supply holes provided on an inner side relative to the same at the time of polishing both the surfaces of the wafer.

Abstract: A grinding method of a rotating workpiece W having a cylindrical part 20 and a pair of end faces 21 at both sides of the cylindrical part 20 uses a grinding wheel 10 whose grinding stone is narrower than a finishing width S1 between the end faces 21. In a first grinding step, the grinding wheel 10 is relatively moved to the cylindrical part 20 in a direction crossing the rotational axis of the workpiece W and is shuttled along the rotational axis of the workpiece W at least one time between the finishing width S1 of the end faces 21 until the grinding wheel 10 reaches the cylindrical part. And in a second grinding step, the grinding wheel 10 is moved from one of the end faces 21 to the opposite end face 21 on the cylindrical part 20, so as to finish the end faces 21 to a predetermined width S1.

Abstract: A wafer polishing method is provided. First, a wafer, having a first surface, a second surface, and a plurality of opening portions depressed on the first surface, is provided. A plastic adhesive is filled in the opening portions and cured later. A polishing step is performed to thin the thickness of the wafer. Therefore, the yield of the wafer in the polishing process can be improved by the protection of the plastic adhesive.

Abstract: A process of forming an electronic device can include providing a workpiece. The workpiece can include a substrate, an interlevel dielectric overlying the substrate, a refractory-metal-containing layer over the interlevel dielectric, and a first metal-containing layer over the refractory-metal-containing layer. The first metal-containing layer can include a metal element other than a refractory metal element. The process further includes polishing the first metal-containing layer and the refractory-metal-containing layer as a continuous action to expose the interlevel dielectric. In one embodiment, the metal element can include copper, nickel, or a noble metal. In another embodiment, polishing can be performed using a selectivity agent to reduce the amount of the interlevel dielectric removed.

Abstract: An abrasive cutting blade is provided to achieve high-quality surface finishes at high feed rates. The blade is fabricated by electroplating fine abrasive onto a steel cathode disc to form a first layer, followed by electroplating a second layer of coarser abrasive onto the first layer. A third layer of fine abrasive is then electroplated onto the second layer. The resulting composite is then removed from the cathode disc to form a multi-grit, multi-layer, hub-less blade.

Abstract: In prior art, an additional radial inward movement that is performed in accordance with a rotating cam disk is imparted on the grinding disk in order to relief-grind the cutting teeth and the chamfer of taps and the cutting teeth of thread formers. The invention relates to a cam disk which can be rotated about an axis and is provided with a control cam. The control cam forms a group of curves according to a large number of possible undercut contours on the grinding teeth of the tap or thread former, which are to be relief-ground. In order to obtain a specific undercut contour on a cutting tooth, a limited angle of rotation is selected from the control cam. The area is mechanically, optically, or electronically scanned by means of a scanning device. To this avail, the cam disk performs an oscillating rotary movement only above the selected section of the control cam.

Abstract: A CMP polishing liquid being capable of using in a chemical mechanical polishing comprising of: a first chemical mechanical polishing step of polishing a conductive substance layer of a substrate having an interlayer insulation film containing convex and concave regions on a surface thereof, a barrier layer coating along the surface of the interlayer insulation film, and the conductive substance layer coating the barrier layer while filling the concave regions, and thus exposing the barrier layer in the convex regions; and a second chemical mechanical polishing step of exposing the interlayer insulation film in the convex regions by polishing the barrier layer exposed in the first chemical mechanical polishing step; characterized in that a difference (B)?(A) is 650 {acute over (?)} or less, wherein the (A) is a polishing amount of the interlayer insulation film in a field area when the interlayer insulation film in the field area having a width of 1,000 ?m or more of the interlayer insulation film region f

Abstract: A CMP process is provided. A first polishing process on a wafer is performed using a first hard polishing pad with a first slurry. Then, a buffering process on the wafer is performed using a soft polishing pad with a cleaning agent to buffer the pH value in the first polishing process and to remove at least portion of the first slurry and the cleaning agent by the contact with the first soft polishing pad simultaneously. Thereafter, a second polishing process on the wafer is performed using a second hard polishing pad with a second slurry such that the pH value after the buffering process is between the pH value in the first polishing process and the pH value in the second polishing process. The method can avoid the scratch issue of wafer surface by particles resulting from pH shock and cross contamination.

Abstract: In a method for machining rotation pieces, including at least one working step, and wherein at least one surface of the workpiece which is clamped in the device is subjected to a grinding step, at least one front-sided boring is carried out in the workpiece in the same clamping device used for the grinding step. For example, during a grinding process, the workpiece can be clamped at least at both ends in a clamping apparatus, and for the boring process, the clamping apparatus can be released at least at one end and a chuck for a boring tool can be arranged there, which then performs the desired end-face boring.

Abstract: The present invention is a method for producing a semiconductor wafer, comprising: at least a double-side polishing step; and a chamfered-portion polishing step; wherein as a first chamfered-portion polishing step, at least, a chamfered portion of the wafer is polished so that a chamfered surface of each of main surface sides in the chamfered portion is in contact with a polishing pad; then the double-side polishing is performed; as a second chamfered-portion polishing step, at least, the chamfered portion of the wafer is polished so that an end surface of the chamfered portion is in contact with a polishing pad and so that both main surfaces of the wafer are not in contact with a polishing pad. Thereby, when a semiconductor wafer is produced, scratch and such generated in the chamfered portion in a double-side polishing process can be removed and, excessive polishing in a peripheral portion of a main surface can be prevented from being caused in polishing a chamfered portion.

Abstract: A linear sander has a base, at least one rough abrasive assembly, at least one fine abrasive assembly and a reciprocating device. The base has two sides and a belt. Each rough abrasive assembly is mounted on the base above the belt and has a rotating axle and an abrasive brush mounted around the rotating axle. Each fine abrasive assembly is rotatable mounted on the base is aligned obliquely to the mounting shafts and has two mounting brackets, two mounting shafts and multiple abrasive rollers. The reciprocating device is connected to the abrasive assembly and has a pivot bracket mounted securely on one of the mounting brackets, two drive bars mounted on move the abrasive rollers linearly along the mounting shafts and a linear driver connected to the drive bar.

Abstract: A grinding apparatus and a grinding system capable of efficient and superior grinding performance prevent the falling of a belt during the grinding of an edge surface thereof. The apparatus includes two rotating bodies 31 and 32 each having segment brushes 4, 4, . . . attached in the circumferential direction at the edge thereof. The rotating bodies 31 and 32 are rotated in the same direction. The tip of the segment brushes 4, 4, . . . is opposed to one edge surface of a belt b stretched between a driving roller 21 and a driven roller 22. The segment brushes 4 of the two rotating bodies enter toward the belt b at appropriate locations on the one edge surface, such that the falling of the belt can be prevented. A grinding apparatus 1 includes a grinder 3 consisting of the rotating bodies 31 and 32, and a holder consisting of the rollers 21 and 22 and a casing 23 by which the rollers are rotatably supported.

Abstract: The present invention is a static pressure pad for supporting both sides of a raw wafer without contact by a static pressure of a fluid supplied to the both sides of the raw wafer in a double-disc grinding machine for a semiconductor wafer, wherein in patterns of lands to be banks of surrounding pockets formed on a surface side of supporting the raw wafer of the static pressure pad, an outer circumferential land pattern required to support the raw wafer is a concentric circle with respect to a rotation center of the raw wafer, and a land pattern inside the outer circumferential land pattern is a non-concentric circle with respect to the rotation center of the raw wafer and asymmetrical with respect to all the straight lines which bisect the static pressure pad.

Abstract: A target surface of a tape-shaped substrate of an oxide superconductor with an intermediate layer formed on this target surface and an oxide superconductor thin film is polished by causing the tape-shaped substrate to continuously run. The polishing step includes an initial polishing process for carrying out random polishing of the target surface and a finishing process that is carried out after the initial polishing process for forming grooves on the target surface along the running direction of the substrate. The intermediate layer has an in-plane directionality of 7° or less. The tape-shaped substrate is fabricated by rolling nickel, a nickel alloys or stainless steel.

Abstract: A polishing apparatus is configured to simultaneously polish both surfaces of a work, and includes a pair of stools rotating in opposite directions, a pair of detecting units configured to detect rotation rates of the stools, a pressurizing unit configured to compress the work between the pair of the stools, a slurry supply unit configured to supply a slurry to the stool, and a control unit configured to reduce, when determining that a frictional force between the polishing surface and the work exceeds a threshold, at least one of a load applied by the pressurizing unit, the rotation rate of the stool, and a supply amount of the slurry supplied by the slurry supply unit.

Abstract: A method of cleaning an edge of a substrate is provided. The method comprises tensioning a first polishing film in a frame; contacting the first polishing film against an edge of a substrate; conforming the first polishing film to the edge of the substrate, the edge including an outer edge and at least one bevel; and rotating the substrate while the first polishing film remains in contact with the substrate. Numerous other aspects are provided.

Abstract: A floor abrading machine is used to abrade the surface of a factory finished wooden floor so the abraded surface may be recoated with a fresh coat of wooden floor finish. Abrasion of the surface provides anchor sites to achieve a strong bond between the pre-existing abraded finish and the fresh coat of wooden floor finish. The process requires abrading, not removing the factory finish down to bare wood, and recoating to restore the luster to a factory finished wooden floor. Conventional sanders remove the finish down to bare wood to refinish a wooden floor that has been installed and finished in place.

Abstract: The invention relates to method for the surface treatment of roof racks for motor vehicles, the roof racks being composed of aluminum and/or aluminum alloy. Provision is made whereby the surface is polished at least in certain areas to achieve a brilliant finish, and the polished surface is abraded at least in certain areas to achieve a satin-finish surface section. In addition, the invention relates to a corresponding roof rack.

Abstract: A substrate processing apparatus (1) has a first polishing unit (400A) and a second polishing unit (400B) for polishing a peripheral portion of a substrate. Each of the two polishing units (400A, 400B) includes a bevel polishing device (450A, 450B) for polishing a peripheral portion of a substrate and a notch polishing device (480A, 480B) for polishing a notch of a substrate. The substrate processing apparatus (1) has a maintenance space (7) formed between the two polishing units (400A, 400B). The bevel polishing devices (450A, 450B) in the two polishing units (400A, 400B) face the maintenance space (7) so as to be accessible from the maintenance space (7).

Abstract: A method for producing a mirror (10) from a titanium-based material by using the technique of ultraprecision machining. The mirror produced using this method has both a shape accuracy and a surface roughness in the submicrometer region. The mirror (10) is made from a titanium-based material having a shape accuracy and a surface roughness in the submicrometer region, whose basic shape (11) has a has a reflecting surface (12) having a surface roughness of less than 60 nm, and in particular of less than 30 nm.

Abstract: Semiconductor wafers are processed so as to remove material on one or both sides by means of at least one grinding tool, with coolant supplied into a contact region between the semiconductor wafer and the at least one grinding tool, characterized in that the coolant flow rate is set as a function of a grinding tooth height of the at least one grinding tool and this coolant flow rate is reduced as the grinding tooth height decreases.