Abstract: A surface treatment method that enables a surface of an electrostatic chuck to be smoothed, so as to improve the efficiency of heat transfer between the surface of the electrostatic chuck and a substrate. The electrostatic chuck is provided in an upper portion of a susceptor provided in a chamber of a substrate processing apparatus. In the surface treatment of the electrostatic chuck, a sprayed coating film is formed on the surface of the electrostatic chuck, next the surface of the electrostatic chuck is ground by bringing into contact therewith a grindstone, then the surface of the electrostatic chuck is ground flat by bringing into contact therewith a lapping plate onto a surface of which is sprayed a suspension, and then the surface of the electrostatic chuck is ground smooth by bringing into contact therewith a tape of a tape lapping apparatus.

Abstract: A method of manufacturing a disk substrate includes a disk substrate forming step of forming a disk substrate; and an outer chamfering step of chamfering an outer edge of the disk substrate. The outer chamfering step includes chamfering the outer edge by bringing an end surface of a cylindrical-shaped outer chamfering grindstone having a hollow portion on its end into contact with the outer edge such that the hollow portion faces the outer edge while rotating each of the outer chamfering grindstone and the disk substrate.

Abstract: A multifiber (MF) ferrule produced using a ferrule molding insert that is jig ground in order to improve the tolerance on the bumper height of a molded ferrule and the surface finish on the region of interest (ROI), thus improving manufacturing yields.

Abstract: A superfinishing system and method, wherein an abrasive is employed to process a workpiece, and wherein the system simultaneously mounts a plurality of workpieces in a diagonal turret, or mounts a plurality of different types of workpieces in a plurality of chucks for different operations thereon, or performs a plurality of different operations on the same workpiece without remounting. The system improves throughput by allowing flexibility in the operation and multitasking.

Abstract: The invention relates to a carrier for holding semiconductor wafers during a double-side polishing of the semiconductor wafers, comprising cutouts for receiving the semiconductor wafers and passage openings for a polishing agent supplied during the polishing. Some of the passage openings are formed by holes which have a diameter of 2 to 8 mm and are arranged at a distance of 1 to 10 mm around the cutouts, wherein the holes are arranged on two central sections and an inner or an outer section of a circular path.

Abstract: Embodiments of the invention describe a method for reclaiming a substrate by removing surface films with media blasting. A substrate is provided having a surface film. Media blasting is performed on the substrate to remove the surface film from the surface. In one embodiment media blasting removes a film from the substrate top surface. In another embodiment media blasting removes a film from the substrate top surface and side surface.

Abstract: A polishing system and a method are presented for uniformly polishing efficiently at a fast rate the surface of a tape-like metallic base material of several hundred meters in length. The polishing system is provided not only with devices for causing the base material to travel continuously and applying a specified tension in the base material but also with a first polishing device for randomly polishing the target surface and a second polishing device for carrying out a final polishing on the target surface in the direction of travel of the base material. Polishing marks are formed in the direction of travel on the target surface by the final polishing.

Abstract: A method for creating a concave section of glass from a glass substrate having flat surfaces includes the use of a grinding wheel and a turntable. The method includes the steps of securing the glass substrates to the turntable. The turntable is then spun to create a turntable axis of rotation. The grinding wheel is rotated about a wheel axis of rotation such that the wheel axis of rotation is perpendicular to the turntable axis of rotation. The grinding wheel and the turntable move relative to each other along the turntable axis of rotation. The glass substrate is ground by the grinding wheel contacting the glass substrate to create the concave section of glass while the glass substrate is rotating about the wheel axis of rotation and moving relative to the turntable.

Abstract: A recessed portion is formed in an area, of a rear surface of a wafer, corresponding to a device formation area is formed by a rough grinding wheel of a rough grinding unit and an annular protruding portion is concurrently formed around the recessed portion. The inner circumferential lateral surface of the recessed portion is next ground by a finishing grinding wheel of a finishing grinding unit and the bottom surface is subsequently ground.

Abstract: A polishing apparatus for polishing a periphery of a substrate includes a substrate holder configured to rotate the substrate, a first polishing section configured to polish the periphery of the substrate by bringing a polishing layer of a first polishing tool into contact with the periphery of the substrate when rotated by the substrate holder, and a second polishing section configured to polish the periphery of the substrate by bringing a polishing layer of a second polishing tool into contact with the periphery of the substrate when rotated by the substrate holder. The polishing layer of the first polishing tool has hard first abrasive grains, and the polishing layer of the second polishing tool has second abrasive grains that are softer than the first abrasive grains.

Abstract: An apparatus for machining an article (L) in the form of a slab or the like comprises—in addition to a rotary tool (24) associated with a spindle (22)—a nozzle (26) ejecting water at very high pressure. Both the rotary tool and the nozzle are supported by a carriage (20) sliding along a beam (18) in turn sliding along two shoulders (14) in a perpendicular direction. In the working area (12) and above a tank (30) normally filled with water, the article (L) is supported in a horizontal position not only by an interchangeable grid (32; 52), but preferably also by a disposable support (34) which prevent the rotary tool (24) from coming into contact with the grid. The disposable support is periodically replaced.

Abstract: A method for uniformly planarizing a wafer that includes determining a first wafer warped value at a first zone on the wafer, determining a second wafer warped value at a second zone on the wafer, and calculating a pressure difference based on the first and second wafer warped values at the first and second zones is provided. The method also includes performing a chemical mechanical polishing of the wafer, applying a first pressure based on the first wafer warped value to the wafer at the first zone during the chemical mechanical polishing, and applying a second pressure based on the second wafer warped value to the wafer at the second zone during the chemical mechanical polishing, a difference between the first pressure and the second pressure based on the pressure difference.

Abstract: In order to grind bar-shaped workpieces which have a non-circular cross-section and flat faces which are parallel to each other, two partial operations are performed consecutively. First, the bar-shaped workpiece is rough ground and finished on the faces by way of double-disk face grinding. The bar-shaped workpiece is clamped on the longitudinal sides in the first clamping position thereof, and the bar-shaped workpiece is transported between two clamping jaws, which clamp the workpiece in the second clamping position thereof on the faces. The first clamping position is then released, and the bar-shaped workpiece is rotated by the clamping jaws. A CNC-controlled peripheral grinding step is performed based on CX interpolation principles. This rough grinds and finishes the longitudinal sides of the bar-shaped workpiece. Transport from the first to the second clamping position is effected by a clamping station, which concomitantly forms the holder for the face grinding operation.

Abstract: A surface polishing method for enhancing crystal orientation on the surface of a tapelike metal substrate in order to enhance the critical current of a superconducting thin film. In an oxide superconductor comprising a tapelike substrate, an intermediate layer formed on the tapelike substrate, and an oxide superconducting thin film layer formed on the intermediate layer, the method for polishing a surface to be polished of the tapelike substrate comprises a step for polishing the surface to be polished while traveling the tapelike substrate continuously, wherein an initial polishing step and a finish polishing step are included. Ultimately, the average surface roughness Ra of the polished surface is 2 nanometer or less and the in-plane orientation ?? is 5° or less.

Abstract: A method for treating an area of a semiconductor wafer surface with a laser for reducing stress concentrations is disclosed. The wafer treatment method discloses treating an area of a wafer surface with a laser beam, wherein the treated area is ablated or melted by the beam and re-solidifies into a more planar profile, thereby reducing areas of stress concentration and stress risers that contribute to cracking and chipping during wafer singulation. Preferably, the treated area has a width less than that of a scribe street, but wider than the kerf created by a wafer dicing blade. Consequently, when the wafer is singulated, the dicing blade will preferably saw through treated areas only. It will be understood that the method of the preferred embodiments may be used to treat other areas of stress concentration and surface discontinuities on the wafer, as desired.

Abstract: A polishing apparatus polishing a surface of a substrate, such as a semiconductor substrate. The polishing apparatus including a substrate holding mechanism, a polishing table having a polishing surface, and a polishing surface temperature controller for controlling a temperature distribution of the polishing surface. The substrate holding mechanism and the polishing table provide relative movement between the surface of the substrate and the polishing surface while the substrate holding mechanism presses the surface of the substrate against the polishing surface to thereby polish the surface of the substrate. The polishing surface temperature controller controls the temperature distribution so that the polishing surface has a predetermined temperature distribution to thereby control removal rates of portions of the surface of the substrate.

Abstract: A double-side grinding apparatus is designed to be capable of minimizing thermal expansion of hydrostatic pad members and reducing nanotopography in performing wafer grinding. The double-side grinding apparatus is a double-side grinding apparatus for wafers that can simultaneously grind either surface of a wafer to be ground by pressing a grindstone against either surface of the wafer to be ground while hydrostatically supporting either surface of the wafer to be ground in a noncontact manner. Each hydrostatic supporting unit is formed with a hydrostatic pad member facing the wafer to be ground, and a base member placed on the back surface of the hydrostatic pad member. The hydrostatic pad member is made of a ceramic member, and the base member is made of a metal member.

Abstract: A servo stroking apparatus and system (10) for honing wherein the cam stroking motion follows a cam profile which produces a finite jerk profile for reducing machine vibration and optimizing one or more honing parameters. The cam profile can be selected for example from a simple harmonic cam profile, a cycloidal profile, a modified trapezoidal profile, apolynomial profile, and a modified sine profile, or a mix of cam profiles. The servo controlled stroker mechanism can include for instance a ball screw mechanism (36), a linearmotor (40), a fluid cylinder, a chain drive or a belt drive. One or more other servo controlled aspects of the honing operation can be synchronized with the servo controlled stroking operation, such as the, rotation of the honing tool.

Abstract: This wafer polishing apparatus includes: a polishing plate having a polishing pad; a carrier plate which is placed facing the polishing pad and which slides and presses wafers against the polishing pad, while rotating in a state of holding the wafers; and an abrasive slurry supply device, wherein the abrasive slurry supply device is able to supply different abrasive slurries, each of the abrasive slurries contains abrasives of which the average grain size is different from those contained in the other abrasive slurries. This method for polishing wafers includes: while supplying an abrasive slurry to a surface of a polishing pad, sliding and pressing wafers against the polishing pad, wherein different abrasive slurries are supplied to the surface of the polishing pad, and each of the abrasive slurries contains abrasives of which the average grain size is different from those contained in the other abrasive slurries.

Abstract: A manufacturing method of a thin-film head includes the steps of, laminating and patterning a soft magnetic layer with iron alloy that contains silicon and aluminum through a base layer on a substrate; laminating an insulating layer on the patterned soft magnetic layer; performing a chemical-mechanical polishing of a surface of the laminated insulating layer and the patterned soft magnetic layer with a first acid slurry; forming a lower shield layer by a mechanical polishing with a second weak acid, or neutral slurry with a pH different from that of the first slurry; and forming a lower shield gap layer and a magnetoresistive effect layer on the lower shield layer.

Abstract: In sophisticated CMP recipes, the material removal may be accomplished on the basis of a chemically reactive slurry material and a reduced down force, wherein the surface topography of a finally obtained material layer may be enhanced by using, at least in a final phase, a glazed state of the polishing pad.

Abstract: A method of producing a complex shape in a workpiece includes the steps of: i) grinding a workpiece at a maximum specific cutting energy of about 10 Hp/in3·min with at least one bonded abrasive tool, thereby forming a slot in the workpiece; and ii) grinding the slot with at least one mounted point tool, thereby producing the complex shape in the slot. The bonded abrasive tool includes at least about 3 volume % of a filamentary sol-gel alpha-alumina abrasive grain having an average length-to-cross-sectional-width ratio of greater than about 4:1 or an agglomerate thereof. A method of producing a slot in a metallic workpiece having a maximum hardness value of equal to, or less than, about 65 Rc includes the step of grinding the workpiece with a bonded abrasive tool at a material removal rate in a range of between about 0.25 in3/min·in and about 60 in3/min·in and at a maximum specific cutting energy of about 10 Hp/in3·min.

Abstract: A lens holder (16) is attached to a processing target lens (2) such that a holder center (O) coincides with a processing center position (21) of the lens. An axial deviation measuring mark (81a, 81b) is displayed on the processing target lens (2) to coincide with a reference position mark (80a, 80b) of the lens holder (16), and the circumferential surface of the processing target lens (2) undergoes primary processing. After primary processing, the axial deviation of the processing target lens (2) is measured from the reference position mark (80a, 80b) and axial deviation measuring mark (81a, 81b). When axial deviation exists, the lens holder (16) is removed from the processing target lens (2) and the processing target lens (2) is held again, so that the axial deviation is corrected. After that, the processing target lens (2) undergoes secondary processing.

Abstract: Both sides of a large diameter semiconductor wafer are polished by the following ordered steps: a) polishing the wafer backside on a polishing pad containing a fixed abrasive, a polishing agent solution free of solids being introduced between the wafer backside and the polishing pad; b) stock polishing the wafer frontside on a polishing pad which contains a fixed abrasive, a polishing agent solution free of solids being introduced between the wafer frontside of and the polishing pad; c) removing microroughness and microdamage from the wafer frontside by polishing the frontside on a polishing pad, a polishing agent solution containing abrasives being introduced between the wafer frontside and the polishing pad; and d) final polishing of the wafer frontside by polishing the frontside on a polishing pad containing no fixed abrasive, a polishing agent solution containing abrasives being introduced between the wafer frontside and the polishing pad during the polishing step.

Abstract: Semiconductor wafers with profiled edges, are produced with decreased losses due to edge or other damage by separating a semiconductor wafer from a crystal; profiling the edge in a profile producing step wherein the edge is mechanically machined to a profile that is true to scale with respect to a predefined target profile; mechanically machining the wafer to reduce the a thickness of the semiconductor wafer; and machining the edge profile to acquire the target profile.

Abstract: A device for double-sided processing of flat workpieces has upper and lower working discs forming between them a working gap containing a carrier disc with cutout(s) for workpiece(s), the carrier disc having circumferential teeth by means of which it rolls on an inner and an outer gear wheel or pin ring, wherein the gear wheels or pin rings have a multiplicity of gear or pin arrangements which engage the teeth of the carrier discs during rolling, at least one of the pin arrangements having a guide which delimits movement of the margin of the carrier disc in at least one axial direction, the guide formed by a circumferential shoulder or a circumferential groove.

Abstract: A method of processing a semiconductor wafer using a double side grinder of the type that holds the wafer in a plane with a pair of grinding wheels and a pair of hydrostatic pads. The method includes measuring a distance between the wafer and at least one sensor and determining wafer nanotopology using the measured distance. The determining includes using a processor to perform a finite element structural analysis of the wafer based on the measured distance.

Abstract: An apparatus for repairing a surface of a media storage disc is disclosed. The apparatus comprises an exterior housing having an upper lid rendered with an upper lid shaft and a base portion that includes a platform for holding the media storage disc. The disc is placed on the platform with the bottom surface facing upwards and secured by at least one locking mechanism. The apparatus further includes an abrasive pad system attached to the upper lid. The abrasive pad system includes an abrasive pad holder, at least three springs evenly arranged between a top side and a bottom side of the abrasive pad holder. The springs distribute an even amount of pressure on the media storage disc. A plurality of abrasive pads is fixed to the bottom side of the abrasive pad holder. The media storage disc is sanded, buffed, and waxed with a plurality of abrasive pads.

Abstract: The invention concerns a device for the automatic loading of workpieces into a gear manufacturing machine, in particular a hard state finishing machine, by means of a swivel device arranged on the machine, where simultaneous with the machining process of a work piece blank (2) clamped on the work spindle (1) a finish machined work piece (2) on the transfer platform (8) located opposite the work spindle is de-oiled in a work piece loading lock, removed, and a fresh work piece blank fed in. The transfer platform (8) is designed as a centrifuge station.

Abstract: In effecting two-sided surface grinding for surface-grinding the opposite surfaces of a workpiece simultaneously by a pair of oppositely disposed grinding wheels, infeed grinding is performed by oscillating the workpiece within the range where the surfaces to be ground of the workpiece do not protrude from the inner and outer peripheries of the grinding wheel surfaces of the grinding wheels, and then through-grinding is performed by feeding the workpiece to allow the surfaces to be ground to pass along the inner and outer peripheries of the grinding wheel surfaces. As an effect, worn wheel edges or the like can be prevented from being formed in the inner and outer peripheral edges, that grinding wheel surfaces can be maintained in proper shape for a prolonged time, that the grinding accuracy is better, and that dress interval can be prolonged, thus improving the life of grinding wheels.

Abstract: Semiconductor wafers are CMP polished by polishing the rear side of the semiconductor wafer by means of CMP with a material removal with a profile along the diameter of the wafer wherein material removal is higher at the center than at the edge of the rear side; and polishing the front side of the wafer by means of CMP with a material removal with a profile along the diameter of the wafer wherein material removal is lower in the center of the front side than in an edge region of the front side.

Abstract: Provided is a double-sided lapping carrier comprising a base carrier having a first major surface, a second major surface and at least one aperture for holding a workpiece, said aperture extending from the first major surface through the base carrier to the second major surface, wherein the base carrier comprises a first metal, the circumference of said aperture is defined by a third surface of the base carrier consisting of the first metal and, at least a portion of the first major surface or at least a portion of each of the first and the second major surfaces comprises a polymeric region, said polymeric region comprising a polymer having a work to failure of at least 10 Joules. Also provide are methods of lapping.

Abstract: Spots generated on a glass substrate after a polishing step are reduced. The present invention relates to a method for polishing a glass substrate including injecting a silica abrasive and a high-boiling solvent in a final glass substrate polishing step. The high-boiling solvent is preferably a solvent having a molecular weight of 300 or lower and a boiling point of 150° C. or higher. As Examples of the high-boiling solvent having a molecular weight of 300 or lower and a boiling point of 150° C. or higher includes ethylene glycol, propylene glycol and glycerine.

Abstract: A method for honing a workpiece by passing a workpiece through a hone tool having a plurality of abrasive surfaces configured to remove a portion of all exterior machining surfaces of the workpiece as it is passed through the hone tool, the exterior machining surfaces being non-uniform and wherein the hone tool is configured to hone all of the exterior machining surfaces simultaneously as workpiece is passed through the hone tool. An assembly for honing a workpiece, the assembly having a plurality of hone tools each having abrasive surfaces configured to remove a portion of exterior non-uniform surfaces of a workpiece pushed through the hone tool, wherein the hone tool is configured to surround the entire periphery of the workpiece being passed therethrough.

Abstract: A chemical-mechanical polishing apparatus including a table top, a transfer station mounted on the table top, a plurality of polishing stations mounted on the table top, a plurality of washing stations, and a plurality of carrier heads supported by a support member rotatable about an axis. Each washing station is located between a first polishing station and either a second polishing station or the transfer station, and the transfer station and the plurality of polishing stations are arranged at approximately equal angular intervals about the axis.

Abstract: A wafer manufacturing method includes after flattening both upper and lower surfaces of a wafer sliced from a single crystal ingot, processing the wafer having damage on both surfaces caused by the flattening, so as to obtain desired damage at least on the lower surface of the wafer, the desired damage having a damage depth ranging from 5 nm-10 ?m; forming a polysilicon layer at least on the lower surface of the wafer while the damage on the lower surface of the wafer remains; single-wafer etching the upper surface of the wafer; and final polishing the upper surface of the wafer to have a mirrored surface, after the single-wafer etching.

Abstract: It is to provide a double-side mirror-finished semiconductor wafer having an excellent flatness by conducting a polishing step from rough polishing to finish polishing for simultaneously polishing both surfaces of a raw wafer with the same polishing cloth to reduce the polishing amount of the raw wafer as well as a production method thereof.

Abstract: The present invention relates to a method for manufacturing silicon articles for a plasma processing apparatus. The present invention provides a method for manufacturing silicon articles, comprising: preparing a silicon ingot; forming a hollow silicon cylinder and a silicon core cylinder having a diameter less than that of the silicon ingot by coring the silicon ingot; forming a silicon annular plate having a central opening by cutting the hollow silicon cylinder and forming a silicon electrode plate by cutting the silicon core cylinder; and forming a silicon ring by processing the silicon annular plate and forming a silicon electrode by processing the silicon electrode plate. According to the present invention, a hollow silicon cylinder and a silicon core cylinder are manufactured by coring a cylindrical silicon ingot before the silicon ingot is sliced.

Abstract: The present invention generally relates to a polishing system. Particularly, the present invention relates a polishing apparatus having one or more modular polishing stations, and a plurality of polishing heads movably connected to a transferring system.

Abstract: A wafer can be thinned without occurrences of dimples. A support plate 1 has a number of through holes 10. A circuit forming surface of a wafer 2 is adhered to one surface of the support plate by an adhesive member 4, and a dimple prevention member 3 having a thickness of 100 ?m or more and having an adhesive layer 30 on one face is adhered to the other surface, thus the openings at both ends of the through holes 10 are blocked. The support plate is vacuum adsorbed to a support table through the dimple prevention member, and a non circuit-forming face of the wafer is ground/polished to thin the wafer. The dimple prevention member is stripped off, and a solvent is penetrated into the adhesive member through the through holes to detach the wafer from the support plate.

Abstract: To optimize the results of rounding and therefore to optimize the high pressure resistance of the component, it is firstly proposed that prior to the machining step of hydro-erosive rounding, the edge (5) and the surfaces (4, 6) of the high pressure-resistant component (1) which adjoin the edge (5) are each placed under compressive stresses in the region of their surface by means of a grinding and/or honing process. Also with regard to the method, and with regard to an apparatus for the hydro-erosive rounding, it is proposed that a closure element (9) is inserted into the continuing first bore (2), downstream of the second bore (3), which branches off from the first bore, as seen in the main direction of flow (S) of the liquid (8) mixed with abrasives (7), in order to divert the liquid (8) mixed with abrasives (7) from the first bore (2) into the second bore (3).

Abstract: A semiconductor wafer is produced by a method comprising a slicing step of cutting out a thin disc-shaped semiconductor wafer from a crystalline ingot; a fixed grain bonded abrasive grinding step of sandwiching the semiconductor wafer between a pair of upper and lower plates each having a pad of fixed grain bonded abrasive to simultaneously grind both surfaces of the semiconductor wafer; and a one-side polishing step subjected to both surfaces of the semiconductor wafer after the fixed grain bonded abrasive grinding step.

Abstract: A semiconductor wafer is produced by a method comprising a slicing step, a fixed grain bonded abrasive grinding step and a beveling step, in which the kerf loss is reduced and the flatness is improved.

Abstract: In a grinding machine with a grinding means for machining a workpiece surface which can be moved in a direction of conveyance relative to the grinding means and is arranged in a machining plane, wherein the grinding means has a large number of grinding heads with grinding elements (8) rotating about a respective shaft, and the grinding heads can be moved by means of an endlessly revolving transporting means (1) in a grinding region (3) by deflection about deflection rollers via rectilinear portions in a grinding region at an angle to the direction of conveyance, improved grinding results are facilitated as a result of increased degrees of freedom in the setting of the grinding parameters without high costs for drive motors if a drive means (13), with which the grinding elements (8) are driven in rotation by a common motor provided for rotationally driving these grinding elements (8), is provided for at least one group of a plurality of grinding elements (8), and in that the drive means (13) consists of a flex

Abstract: The present invention provides a carrier for double-side polishing apparatus which is set between upper and lower turn tables having polishing pads attached thereto and has a holding hole in which a semiconductor wafer sandwiched between the upper and lower turn tables is held at the time of polishing in a double-side polishing apparatus, wherein a material of the carrier is titanium, and surface roughness of the titanium carrier is 0.14 ?m or above in terms of Ra. As a result, there can be provided the carrier for double-side polishing apparatus, a double-side polishing apparatus, and a double-side polishing method that can stably and efficiently produce a high-quality wafer having reduced wafer peripheral sag and a high flatness at the time of double-side polishing of a semiconductor wafer.

Abstract: A method of grinding semiconductor wafers including simultaneously grinding both surfaces of multiple semiconductor wafers by rotating the wafers between a pair of upper and lower rotating surface plates in a state where the wafers are held on a carrier so that centers of the wafers are positioned on a circumference of a single circle, wherein a ratio of an area of a circle passing through the centers of the wafers to an area of one of the wafers is greater than or equal to 1.33 but less than 2.0; surfaces of the fixed abrasive grains comprised in the surface plates are comprised of pellets disposed in a grid-like fashion, with the pellets provided in a center portion and pellets provided in a peripheral portion being larger in size than the pellets provided in an intermediate portion.

Abstract: A method of grinding semiconductor wafers including simultaneously grinding both surfaces of multiple semiconductor wafers being ground by rotating the multiple semiconductor wafers between a pair of upper and lower rotating surface plates in a state where the multiple wafers are held on a carrier so that centers of the multiple wafers are positioned on a circumference of a single circle, wherein a ratio of an area of a circle passing through the centers of the multiple wafers to an area of one of the multiple wafers is greater than or equal to 1.33 but less than 2.0; a rotational speed of the multiple wafers falls within a range of 5 to 80 rpm; and the grinding of the multiple wafers with the rotating surface plates are conducted with fixed abrasive grains in the presence of an alkali solution.

Abstract: A lapping or polishing machine includes a material having a first finishing surface to process a surface of a work item, a measuring tool to measure a contour of the first finishing surface, and a conditioning tool having a second finishing surface to process the first finishing surface to reduce a difference between the measured contour and a desired contour of the first finishing surface.

Abstract: Embodiments of the present invention provide a polishing module configured to use in a polishing system. The polishing module comprises a base member, two polishing stations disposed on the base member, one load cup, and a carousel having three polishing heads.

Abstract: A method of manufacturing a ferrule assembly. The method including first and second polishing operations. The first polishing operation including polishing only the end face of a ferrule of an assembly. The second polishing operation including polishing only the optical fiber of the assembly.