Abstract: Embodiments of the present invention provide a method of manufacturing a magnetic head slider, the method being adapted so that throat height of a main magnetic pole piece of a perpendicular recording magnetic head can be controlled with high accuracy. According to one embodiment, a first Electrical Lapping Guide element (ELG) is disposed on the same layer as a plated underlayer of a shield of one write head in a row bar, and other ELGs are disposed on the same layer as that of a main magnetic pole piece of another write head. Front end positions (Tops) are detected from changes in resistance values of the other ELGs and an ending position of lapping is calculated. Since the front end positions (Tops) of the other ELGs are accurate, it is possible to assign a correlation to throat height “Th” of the main magnetic pole piece and the resistance value of the first ELG by detecting this resistance value existing when the front end positions (Tops) are detected.

Abstract: An apparatus (1) for removing a film layer on a glass plate includes: a movable base (5) which is movable in an X direction and a Y direction along a glass-plate placing surface (3); a moving means (6) for moving the movable base (5) in the X direction and the Y direction along the glass-plate placing surface (3); a movable base (7) provided on the movable base (5) in such a manner to be movable in a Z direction so as to be capable of moving toward or away from the glass-plate placing surface (3); a moving means (8) for moving the movable base (7) in the Z direction so as to cause the movable base (7) to move toward or away from the glass-plate placing surface (3); a grinding wheel (9) provided on the movable base (7) in such a manner as to be capable of being lifted or lowered with respect to the movable base (7); a resiliently pressing means (15) for resiliently pressing the grinding wheel (9) against a film layer (14); and a detecting means (17) for detecting the lifted or lowered position of the grinding

Abstract: In one aspect of the present invention, an outer diameter (O.D.) centerless grinding machine for use in grinding a diamond workpiece has a grinding wheel positioned parallel to a regulating wheel which is adapted to press a cylindrical workpiece into the grinding wheel as the regulating wheel rotates. Electronic equipment may be adapted to adjust a pressure of the regulating wheel against the grinding wheel. Also, a carrier may be adapted to house the workpiece, the carrier being attached to a translation mechanism adapted to move the carrier between the wheels such that the workpiece is in contact with both wheels.

Abstract: A jet of water in a cylindrical form is supplied from a jet nozzle onto a measurement surface of a substrate to form a column of the water extending between the nozzle and the measurement surface. Light is emitted from an irradiation fiber and transmitted through the column of water to the measurement surface. The light reflected by the measurement surface is received by a light-receiving fiber through the column of water. A measurement calculation unit measures the thickness of a film formed on the substrate, based on the intensity of the reflected light.

Abstract: An apparatus and method for polishing objects, such as semiconductor wafers, uses at least one object cleaner, which may be a movable object cleaner. The movable object cleaner allows access to different parts of the apparatus for maintenance.

Abstract: A rough-polishing method for conducting a rough polishing before mirror-finish polishing on a semiconductor wafer using a polishing apparatus includes a first polishing step for polishing the semiconductor wafer using slurry containing colloidal silica supplied by a slurry supplying unit and a second polishing step for polishing the semiconductor wafer using alkali solution provided by mixing deionized water supplied from a deionized-water supplying unit and alkali concentrate solution supplied by an alkali-concentrate-solution supplying unit. The pH value of the alkali solution and polishing time in the second polishing step are determined based on the load current value of the polishing table in the first polishing step.

Abstract: Provided is a gear matching device capable of shortening time taken for the gear matching, and also to provide a gear machining apparatus using the gear matching device.

Abstract: While data that indicate a relationship between a dressing position P defined by a distance between a rotating shaft 11 of a polishing pad 13 and a rotating shaft 31 of a dresser 30 and shape change of the polishing pad 13 based on input of a target shape of the polishing pad 13 and alternating repetition of dressing the polishing pad 13 by the dresser 30 and measurement of shape of the polishing pad 13 by a pad shape measurement instrument 20 is acquired at a stage prior to commencement of a series of polishing steps for continuously polishing a plurality of polishing target objects (semiconductor wafer W) by a polishing tool 10, the polishing pad 13 is machined to the target shape 13 while the dressing position P is controlled, whereby the dressing position P is set during the polishing steps on the basis of a processing result of this data.

Abstract: An interlayer insulating film is formed on a semiconductor substrate having a semiconductor element formed thereon. At this time, there are protrusions higher than surroundings thereof and non-protruding portions lower than the protrusions on the surface of the interlayer insulating film. First, a first polishing process is carried out on the surface of the interlayer insulating film with use of a first abrasive having non-Prestonian properties produced by mixing abrasive materials including abrasive grains, a polymer additive and water at a predetermined first mixture ratio. Then, after the first abrasive process shifts to an automatically stopping state, a second polishing process is carried out on the surface of the interlayer insulating film with use of a second abrasive having the concentration of polymer additive lower than that of the first abrasive and produced by mixing the abrasive materials at a second mixture ratio different from the first mixture ratio.

Abstract: In one aspect of the present invention, an outer diameter (O.D.) centerless grinding machine for use in grinding a diamond workpiece has a grinding wheel positioned parallel to a regulating wheel which is adapted to press a cylindrical workpiece into the grinding wheel as the regulating wheel rotates. Electronic equipment may be adapted to adjust a pressure of the regulating wheel against the grinding wheel. Also, a carrier may be adapted to house the workpiece, the carrier being attached to a translation mechanism adapted to move the carrier between the wheels such that the workpiece is in contact with both wheels.

Abstract: The present invention relates to a polishing apparatus and a polishing method for polishing a substrate, such as a semiconductor wafer, to planarize the substrate.

Abstract: A method and apparatus for monitoring polishing pad conditioning mechanisms is provided. In one embodiment, a semiconductor substrate polishing system includes a rinse station, a polishing surface, a conditioning element, and a conditioning mechanism. The conditioning mechanism selectively positions the conditioning element over the polishing surface and over the rinse station. At least one sensor is provided and is configured to detect a first position and a second position of the conditioning element when disposed over the rinse station.

Abstract: A polishing system includes a platen, a carrier head to hold a surface of a substrate against a polishing pad on the platen, a monitoring module including a light source and a detector, an optical fiber having a proximate end coupled to the monitoring module and a distal end, and an optical head removably mounted in the platen. The optical head holds the distal end of the optical fiber to direct light through a window in the polishing pad to the surface of the substrate and receive reflected light from the surface of the substrate, and the optical head is configured to adjust a distance from the distal end of the fiber to the window.

Abstract: A polishing state monitoring apparatus measures characteristic values of a surface, being polished, of a workpiece to determine the timing of a polishing end point. The polishing state monitoring apparatus includes a light-emitting unit for applying light from a light source to a surface of a workpiece being polished, a light-receiving unit for receiving reflected light from the surface of the workpiece, a spectroscope unit for dividing the reflected light received by the light-receiving unit into a plurality of light rays having respective wavelengths, and light-receiving elements for accumulating the detected light rays as electrical information.

Abstract: An apparatus for lapping a slider comprises a lapping head for supporting elements while pressing the elements against a rotating lapping plate, the elements that are to be formed into sliders, a holding mechanism for supporting the lapping head, the holding mechanism having a first engaging member that extends in a vertical direction, a base for supporting the holding mechanism, the base having a second engaging member that extends in the vertical direction, wherein the second engaging member is engaged with the first engaging member to form an internal space therebetween, and a decompressing mechanism for decompressing the internal space. The holding mechanism is subjected to vertically upward force from the decompressed internal space in order to be movably supported by the base in the vertical direction.

Abstract: The present invention provides a polishing apparatus and a polishing method capable of calculating outside diameters of rolls of a polishing tape on a polishing-tape supply reel and a polishing-tape recovery reel and capable of calculating a remaining amount of the polishing tape and a consumption of the polishing tape from the outside diameters of the rolls. This polishing apparatus includes a polishing-tape supply reel (46), a polishing head (44), a polishing-tape drawing-out mechanism G1, and a polishing-tape supply and recovery mechanism (45) configured to recover the polishing tape (43) from the polishing-tape supply reel (46) via the polishing head (44).

Abstract: A method and apparatus for conditioning a polishing pad is provided. The conditioning element is held by a conditioning arm rotatably mounted to a base at a pivot point. An actuator pivots the arm about the pivot point. The conditioning element is urged against the surface of the polishing pad, and translated with respect to the polishing pad to remove material from the polishing pad and roughen its surface. The interaction of the abrasive conditioning surface with the polishing pad surface generates a frictional force. The frictional force may be monitored by monitoring the torque applied to the pivot point, and material removal controlled thereby. The conditioning time, down force, translation rate, or rotation of the conditioning pad may be adjusted based on the measured torque.

Abstract: The present invention provides a polishing pad with a pressure sensor and the polishing apparatus thereof. The polishing pad is used in the polishing process of semiconductor and other work piece, which includes at least one substrate, at least one pressure sensor and at least one signal transmitting module. The substrate has a polishing face, a bottom face opposite to the polishing face, and at least one cavity set on the bottom face of the substrate. The pressure sensor is set in the cavity and configured for providing a pressure signal. The signal transmitting module is set on the polishing pad and configured for transmitting a pressure signal. The pressure signal is a loading pressure value and/or loading pressure distribution on the polishing pad with a preset range. Thus, with the pressure signal, the polishing apparatus prevents the concerned work piece from being over polished to further improve polishing quality and yield.

Abstract: Embodiments of the present invention allow control over the element height of read and write heads without damage to a lapping surface table when an air-bearing surface is lapped with a row bar or magnetic head slider tilted. According to one embodiment, the air-bearing surface is lapped with the row bar tilted in the longitudinal direction of a slider to compensate element height-wise positional deviations of the read head and the write head. The lapping is performed while changing an inclination angle stepwise and swinging the row bar in the longitudinal direction of the slider centering around an inclination angle at each step. Thus, the element heights of the magnetic pole piece and the read element can be controlled without damage to a lapping surface table.

Abstract: An embodiment of a planarization system for planarizing a substrate includes a planarizing surface and an encircling element formed to at least partially laterally enclose the substrate, wherein the planarizing system is configured to planarize the substrate with the substrate abutting the planarizing surface during a relative lateral movement between the substrate and the planarizing surface. The substrate is at least partially laterally enclosed by the encircling element. The encircling element abuts the planarizing surface.

Abstract: The present invention relates to methods and apparatus for improving productivity of chemical mechanical polishing (CMP) processes and lowering operating costs of CMP systems. Embodiments of the present invention provide a method for improving the ratio of the layer thickness of composite polishing pads for improved removal rates. Embodiments of the present also provide specific polishing pad identification for monitoring and controlling processes developed for the specific pad to improve overall productivity and reduce downtime of the CMP system.

Abstract: The invention relates to a machine tool for machining workpieces, comprising a workpiece holder. Said workpiece holder comprises a support, a workpiece spindle head mounted on a first side of the support, and a tailstock. Said tailstock is mounted on a second side of the support which is different from the first side in a manner so as to be displaceable.

Abstract: A novel polisher for chemical mechanical planarization process is described. The polisher design can have many variations. For process development and consumable evaluation, the CMP process can be performed on a single die or a section of the wafer. The size of testing wafer can be as small as 2? and as large as 18?. Furthermore, several variations can characterize the slurry for their static etch rate, dynamic etch rate, material removal rate, and viscosity in a single experiment. For production level wafer processing, Chemical Mechanical Polishing of all dies on the wafer surface is achieved by using multi-armed polishing heads or a single polishing head with small piece of a pad at the bottom of the head. The within wafer uniformity can be easily controlled and the equipment can be easily scaled up or down. This inventive design may translate to significant cost reduction for wafer processing at production level as well as evaluation of consumables at research and development level.

Abstract: In a grinding device, first, an eddy-current-sensor detects a distance from the eddy-current-sensor to an outer peripheral surface of a belt layer while a tire to be retreaded held by a pair of half rims is caused to rotate. Thus, an eccentricity amount and an eccentricity direction of the tire to be retreaded with respect to a device axial center, corresponding to the phase of the tire to be retreaded, can be respectively determined, so position control signals corresponding to the phase, eccentricity amount and eccentricity direction of the tire to be retreaded can be generated. Next, on the basis of the position control signal, a carriage causes a rasp to be moved in a radial direction with respect to the tire to be retreaded along the radial direction whose center is a device axial center, and the rasp grinds a tread surface of the rotating tire to be retreaded.

Abstract: In accordance with at least one example embodiment, a method of chemical-mechanical polishing includes re-polishing a polished layer on a wafer based on a measured thickness of the polished layer. In accordance with at least one example embodiment, an apparatus for chemical-mechanical polishing may include a thickness measuring unit configured to measure a thickness of a polished surface on a wafer and to determine a re-polishing time based on the measured thickness. In accordance with example embodiments, a thickness deviation between different lots, wafers, or chips inside a wafer is reduced regardless of the durability of a polishing pad, a polishing head, or a disk used in a polishing apparatus.

Abstract: In one embodiment a method is provided for maintaining a substrate processing surface. The method generally includes performing a set of measurements on the substrate processing surface, wherein the set of measurements are taken using a displacement sensor coupled to a processing surface conditioning arm, determining a processing surface profile based on the set of measurements, comparing the processing surface profile to a minimum profile threshold, and communicating a result of the profile comparison.

Abstract: A lapping or polishing machine includes a material having a first finishing surface to process a surface of a work item, a measuring tool to measure a contour of the first finishing surface, and a conditioning tool having a second finishing surface to process the first finishing surface to reduce a difference between the measured contour and a desired contour of the first finishing surface.

Abstract: The double-side polishing apparatus for polishing both faces of a wafer is capable of reliably measuring not only a thickness of an outer part of the wafer but also a thickness of a center part thereof. The double-side polishing apparatus comprises: a lower polishing plate; an upper polishing plate held by a frame; and a carrier having a through-hole for holding the wafer. A window section, through which a laser beam passes, is formed in a part of the upper polishing plate, under which the wafer held by the carrier passes. An optical thickness measuring equipment is provided to a part of the frame, under which the window section passes while the upper polishing plate is rotated. The thickness measuring equipment emits the laser beam through the window section, receives reflected beams reflected from an upper face and a lower face of the wafer, and calculates the thickness of the wafer on the basis of peak values of the reflected beams.

Abstract: In order to manufacture an epitaxial wafer having satisfactory flatness over its entire surface, epitaxial layers are experimentally grown upon actual wafer samples under various different layer formation conditions, the thickness profiles are measured over the entire surfaces of these wafers before and after growth of the layers, and, from the differences thereof, layer thickness profiles over the entire areas of the epitaxial layers under the various different layer formation conditions are ascertained and stored. Thereafter, the thickness profile of a substrate wafer is measured over its entire area, this is added to each of the layer thickness profiles under the various different layer formation conditions which have been stored, and the planarities of the manufactured wafers which would be manufactured under these various different layer formation conditions are predicted.

Abstract: In an apparatus on a carding machine for grinding a fiber processing clothing on a roller or a card flat, grinding equipment includes at least one grinding element and an infeed device serving to position the grinding element against the clothing. To permit reliable detection and monitoring of the contact between the at least one grinding element and the clothing in a simple manner, a structure-borne noise sensor is associated with the grinding equipment and an electronic evaluator is capable of determining from the structure-borne noise the intensity of the contact between the at least one grinding element and the clothing.

Abstract: Shape memory chemical mechanical polishing methods are provided that use shape memory chemical mechanical polishing pads having a polishing layer in a densified state, wherein the polishing pad thickness and/or groove depth is monitored and the polishing layer is selectively exposed to an activating stimulus causing a transition from the densified state to a recovered state.

Abstract: A signal processing technique that decomposes complex, dynamically changing non-stationary signals from machine components such as bearings into different scales by means of a continuous wavelet transform. The envelope signal in each scale is then calculated from the modulus of the wavelet coefficients. Subsequently, Fourier transform is performed repetitively on the envelope of the signal at each scale, resulting in an “envelope spectrum” of the original signal at the various scales. The final output is a three-dimensional scale-frequency map that indicates the intensity and location of the defect-related frequency lines. The technique is generic in nature, and applicable not only to machine condition monitoring, but also to the health monitoring of a wide range of dynamic systems, including human beings.

Abstract: A system method and apparatus to monitor a frictional coefficient of a substrate undergoing polishing is described. A polishing pad assembly includes a polishing layer including a polishing surface, and a substrate contacting member flexibly coupled to the polishing layer having a top surface to contact an exposed surface of a substrate. At least a portion of the top surface is substantially coplanar with the polishing surface. A sensor is provided to measure a lateral displacement of the substrate contacting member. Some embodiments may provide accurate endpoint detection during chemical mechanical polishing to indicate the exposure of an underlying layer.

Abstract: An eyeglass lens processing apparatus includes: an edge position detector which detects front and rear edge positions of an eyeglass lens based on target lens shape data; a bevel locus setting unit which includes: a) a provisional bevel locus calculator which obtains a provisional bevel locus by obtaining a bevel curve substantially equal to a frame curve; b) a nose-side bevel position determining unit which determines a corrected bevel apex position at a nose-side edge position; c) an ear-side bevel position determining unit which determines a corrected bevel apex position at an ear-side edge position; and d) a corrected bevel locus calculator which obtains a corrected bevel locus which has a curve value equal to the bevel curve; and a processing controller which obtains beveling information based on the corrected bevel locus and controls an operation of the apparatus according to the beveling data.

Abstract: A wafer grinding method and a wafer grinding machine are disclosed for grinding a wafer by executing both the rough grinding process and the finish grinding process. After the rough grinding process before the finish grinding process, the wafer thickness is measured with a noncontact-type thickness gauge, and during the finish grinding process, the finish thickness is finely adjusted by use of a contact-type thickness gauge and referring to the measurement data of the noncontact-type thickness gauge.

Abstract: A machining quality judging method for a wafer grinding machine and wafer grinding machine are disclosed. The thickness of a wafer 2 is acquired from the feed amount of a grinding unit 3 while at the same time actually measuring the thickness of the wafer 2 appropriately. The wafer grinding machine includes a machining quality judging unit 20 for comparing the thickness of the wafer 2 based on the feed amount of the grinding unit 3 with the actually measured thickness of the wafer 2 and judges the machining quality of the ground surface of the wafer 2. Upon judgment of a machining failure, a command is issued to stop the back surface grinding operation.

Abstract: A polishing apparatus is provided for polishing wafers at a high yield rate even if roll-off exists. The polishing apparatus polishes a wafer W by applying a pressure between a polishing member (polishing pad) 201 and the wafer W held by a holding member (top ring) 52 and relatively moving the polishing member 201 to the wafer W. The polishing apparatus comprises a top ring 52 for holding the wafer W, a pressure adjusting mechanism 206 for adjusting a supporting pressure with which the wafer W is supported on a supporting surface by a retainer ring 203, and a control unit 208 for controlling the pressure adjusting mechanism 206 to bring the supporting pressure to a desired pressure based on a roll off quantity of the wafer W. The top ring 52 comprises an air bag 202 for pressing the wafer W against the polishing pad 201, a retainer ring 203 which surrounds the wafer W, and an air bag 204 for pressing the retainer ring 203.

Abstract: In a non-circular workpiece grinding machine, a proximity sensor is arranged to face a non-circular portion of a workpiece for sensing a maximum diameter portion of the non-circular portion to detect that the maximum diameter portion is rotating in a detection phase section when the work spindle is rotating in a low speed rotational phase region in which the work spindle is controlled by a numerical controller to rotate at a low speed. Abnormality judging means is provided for judging that an abnormal workpiece rotation is occurring when the maximum diameter portion of the non-circular portion is not detected by the proximity sensor in the state that the work spindle is rotating in the low speed rotational phase region.

Abstract: In a mask blank substrate to be chucked by a mask stage of an exposure system, the flatness of a rectangular flatness measurement area excluding an area of 2 mm inward from an outer peripheral end surface on a main surface of the mask blank substrate on its side to be chucked by the mask stage is 0.6 ?m or less, and at least three of four corner portions of the flatness measurement area each have a shape that rises toward the outer peripheral side.

Abstract: The present invention provides a blasting device, comprising: a container in which a blast medium is stored; a suction pipe which is inserted in the container to be rotatably supported, and is formed substantially in an L-shape with a lower suction port bent at a right angle; a rotary drive part which rotates the suction pipe; a hose connected to the suction pipe via a rotary joint; an ejector nozzle connected to the hose; an air compressor which supplies compressed air to the ejector nozzle; a pressure sensor which measures pressure in the suction pipe; and a control part which controls a rotational frequency of the suction pipe by the rotary drive mechanism based on a measured value by the pressure sensor.

Abstract: Some embodiments of the present invention provide processes and apparatus for electrochemically fabricating multilayer structures (e.g. mesoscale or microscale structures) with improved endpoint detection and parallelism maintenance for materials (e.g. layers) that are planarized during the electrochemical fabrication process. Some methods involve the use of a fixture during planarization that ensures that planarized planes of material are parallel to other deposited planes within a given tolerance. Some methods involve the use of an endpoint detection fixture that ensures precise heights of deposited materials relative to an initial surface of a substrate, relative to a first deposited layer, or relative to some other layer formed during the fabrication process. In some embodiments planarization may occur via lapping while other embodiments may use a diamond fly cutting machine.

Abstract: An apparatus for processing a magnetic head slider used for a magnetic disk apparatus for performing a magnetic recording/reproducing process in a discoid recording medium. The apparatus for processing a magnetic head slider includes a discoid recording medium used as an abrasive material, a holding unit configured to hold a suspension arm on which a magnetic head slider is disposed, an elevating unit configured to bring the magnetic head slider into contact with the discoid recording medium in a sliding manner by elevating and lowering the discoid recording medium, and a rotating unit configured to rotate the discoid recording medium at a rotation speed lower than a rotation speed upon the magnetic recording/reproducing process.

Abstract: A computer-implemented method for process control in chemical mechanical polishing in which an initial pre-polishing thickness of a substrate is measured at a metrology station, a parameter of an endpoint algorithm is determined from the initial thickness of the substrate, a substrates is polished at a polishing station, and polishing stops when an endpoint criterion is detected using the endpoint algorithm.

Abstract: A method of manufacturing an optical component comprising a substrate and a mounting frame with plural contact portions disposed at predetermined distances from each other is provided. The method comprises providing a measuring frame separate from the mounting frame for mounting the substrate, which measuring frame comprises a number of contact portions equal to a number of the contact portions of the mounting frame, wherein respective distances between the contact portions of the measuring frame are substantially equal to the corresponding distances between those of the mounting frame, measuring a shape of the optical surface of the substrate, while the substrate is mounted on the measuring frame, and mounting the substrate on the mounting frame such that the contact portions of the mounting frame are attached to the substrate at regions which are substantially the same as contact regions at which the substrate was attached to the measuring frame.

Abstract: A polishing device has a reel core around which a polishing tape is wound and a reel plate with flanges that engage with the polishing tape and sandwich it from both sides. A memory element with data on the polishing tape is provided to the reel core such that errors caused by using a wrong kind of polishing tape can be obviated.

Abstract: A method can effectively eliminate a surface level difference (irregularities) in a film formed on an object without producing scratches in a surface of the film, and can polish and remove the film into a flat surface with greatly increased productivity. The method comprises carrying out a first polishing step by pressing a polishing pad of a polishing device, having a diameter which is smaller than the radius of the object, against the surface of the object at a first pressure while moving the polishing pad and the object relative to each other at a first relative speed. The first polishing step is terminated at a point in time when a surface level difference in the object is eliminated to a targeted level.

Abstract: An apparatus for processing, finishing, and planarizing is disclosed. A methods of processing are disclosed. New methods of control for processing are disclosed. The methods and apparatus, can help improve yield and lower the cost of manufacture for planarizing of workpieces having extremely close tolerances such as semiconductor wafers. Cost of manufacture parameters are used for control. Methods to determine preferred changes to process control parameters are disclosed. Use of a model for improving manufacture, cost of manufacture, and profitability is discussed.

Abstract: A method and apparatus for conditioning polishing pads that utilize an apertured conditioning disk for introducing operation-specific slurries, without the need for additional tooling, platens, and materials handling. The method and apparatus utilize a vacuum capability to pull waste material out of the conditioning pad and through the apertured conditioning disk to evacuate the apparatus through an outlet port, the apparatus may also include self-contained flushing means and a piezo-electric device for vibrating the pad conditioning apparatus.

Abstract: A factory, an apparatus, and methods of using an in situ finishing information for finishing workpieces and semiconductor wafers are described. Changes or improvements to cost of manufacture of a workpiece using in-process cost of manufacture information, tracked in-process cost of manufacture information, or cost of manufacture parameters are discussed. Appreciable changes to quality or cost of manufacture of a workpiece using tracking, using in-process tracked information, networks including a multiplicity of apparatus, and using in situ finishing information are discussed. A factory, apparatus, and methods to change or improve process control are discussed. A factory, apparatus, and methods to change or improve real-time process control are discussed. A factory, apparatus, and methods to change or improve predictive control are discussed. The workpieces can be tracked individually or by process group such as a process batch.

Abstract: A method of operating a substrate processing apparatus, upon the occurrence of a nonfatal failure in the apparatus, makes it possible to continue part of the apparatus operations for substrates to clean and recover a substrate or to easily discharge a substrate from the apparatus, without stopping an entire apparatus, thereby reducing the risk of a substrate becoming unprocessable. The method of operating a substrate processing apparatus having a polishing section, a cleaning section and a transferring mechanism, includes: classifying substrates, upon detection of a malfunction in any of the polishing section, the cleaning section and the transferring mechanism, according to the site of the malfunction and to the positions of the substrates in the substrate processing apparatus; and carrying out an operation for each of the substrates after the detection of the malfunction, the operation varying depending on the classification of the substrate.