Abstract: A semiconductor process includes polishing a substrate with a slurry in an enclosure. Polishing the substrate is stopped. First mist is injected into the enclosure, such that the first mist has at least about 80% of saturation of a liquid or gaseous solvent in a carrier within the enclosure.

Abstract: A method and device for forecasting/detecting a polishing end point and for monitoring a real-time film thickness to suppress Joule heat loss due to the eddy current to the minimum, to precisely forecast/detect a polishing end point, to precisely calculate the remaining film thickness to be removed, and polishing rate.

Abstract: A method for the simultaneous double-side grinding of a plurality of semiconductor wafers, involves a process wherein each semiconductor wafer lies such that it is freely moveable in a cutout of one of a plurality of carriers caused to rotate by means of a rolling apparatus and is thereby moved on a cycloidal trajectory, wherein the semiconductor wafers are machined in material-removing fashion between two rotating working disks, wherein each working disk comprises a working layer containing bonded abrasive. The method according to the invention makes it possible, by means of specific kinematics, to produce extremely planar semiconductor wafers.

Abstract: A substrate processing method is used to polish a substrate. The substrate processing method includes rotating a substrate 13 by a motor 12, polishing a first surface of a peripheral portion of the substrate 13 by pressing a polishing surface of a polishing mechanism 20 against the first surface, determining a polishing end point of the first surface by monitoring a polished state of the first surface, stopping the polishing according to the determining the polishing end point, determining a polishing time spent for the polishing, determining a polishing time for a second surface of the peripheral portion based on the polishing time of the first surface, and polishing the second surface for the determined polishing time.

Abstract: The present invention is to provide a lens evaluation method capable of easily evaluating whether there is a difference which greatly changes locally in a lens, and evaluating the degree of the difference. According to the lens evaluation method of the present invention, first, power a distribution of a plurality of measurement point in an arbitrary direction. Next, a calculation power distribution (a design power distribution) is created. Further, a difference distribution between an actually measured power distribution, which indicates an actual power distribution, and a calculation power distribution is obtained. Further, the difference distribution is differentiated to obtain a difference index, and an evaluation is performed based on the difference index to evaluate whether there is a difference which greatly changes locally in a lens, and evaluate the degree of the difference.

Abstract: A method and device for forecasting and detecting a polishing endpoint and real time film thickness monitoring capable of suppressing to a minimum Joule heat loss due to an eddy current, and precisely forecasting and detecting the polishing endpoint, and precisely calculating a remaining film amount to be removed and a polishing rate. A high frequency inductor sensor is positioned close to the conductive film, and monitors a flux change induced in the conductive film. When a film thickness becomes a film thickness corresponding to a skin depth of the conductive film a method of calculating on the spot a polishing rate and a remaining film amount to be removed is provided.

Abstract: A method for forecasting a polishing end time or point, wherein an inductor 36 in a sensor is placed adjacent to the conductive film 28. The magnetic flux formed by the inductor 36 is monitored, and a change of magnetic flux induced in the conductive film 28 is detected. Based on the skin effect of the material of the conductive film 28 as a factor, a process is used in which an eddy current formed with the decrease of the film thickness by polishing increases and a process in which the eddy current formed with the decrease of the film thickness substantially decreases when the polishing is progressed. Based on the characteristic change of the magnetic flux induced in the conductive film 28, the polishing end point is forecasted, and at the same time, the magnetic flux induced in the conductive film 28 is alleviated or turned off.

Abstract: A tapered cutting edge portion and a continuous raised portion from the tapered cutting edge portion are ground in an edge portion of a straight grinding raw material so that an eccentricity is not generated. In a method for grinding a treatment device, one end portion of a tapered grinding raw material is inserted between a grinding surface of a grindstone and a pressing surface of a press block, and finishing surfaces opposite each other while having a predetermined dimension, shape, and angle are ground so that a direction in which abrasive grains of the grindstone run corresponds to a direction of a shaft center. At this point, before the finishing surfaces are ground in the predetermined dimension, shape, and angle which are previously set corresponding to an objective reamer, pre-grinding is performed while a necessary finishing margin with respect to at least one of the surfaces, and then finishing grinding is performed to the other surface.

Abstract: Combinatorial processing including rotation and movement within a region is described, including defining multiple regions of at least one substrate, processing the multiple regions of the at least one substrate in a combinatorial manner, rotating a head in one of the multiple regions to perform the processing, and repositioning the head relative to the one of the multiple regions while rotating the head during the processing.

Abstract: The object is to aim at the reduction in the influence of noises in an output of an AE sensor in a working machine. In a working system comprising a working device for working a work W by causing a tool 14 to come into contact work W, an AE sensor 21, and an AE signal processing section 22 for processing an AE signal output from the AE sensor, AE signal processing section 22 comprises an A/D converter 33 for converting an AE signal into a digital signal, a frequency analysis section 34 for calculating the frequency characteristics of a digital AE signal, storage sections 35, 37 for storing the frequency characteristics when the tool is not in contact with the work or tool dresser as non-contact frequency characteristics, and a difference calculation section 35 for calculating a difference between the frequency characteristics of the detected digital AE signal and the non-contact frequency characteristics.

Abstract: A polishing apparatus for polishing semiconductor wafers comprises a main polishing structure, which includes a plurality of polishing tables, a plurality of polishing heads and a plurality of load-and-unload stations, and an add-on polishing structure, which includes an additional polishing table and an additional polishing head. The add-on polishing structure can be attached to the main polishing structure to form a larger polishing structure with the additional polishing table and the additional polishing head.

Abstract: A continuous flow recirculating jet machining system incorporates a dynamic particle separator downstream of the fluid collection reservoir, for directing the water or other liquid in a serpentine path to promote separation of larger-diameter particulates. A filter bank downstream of the dynamic separator removes fine particles in several stages, providing several alternative fluid flow paths at each stage to facilitate filter replacement and other maintenance at each stage without interrupting system operation. The system further can incorporate a settlement tank between the dynamic separator and the filter bank to separate larger and intermediate sized particles upstream of the filter bank.

Abstract: A cutting apparatus for cutting corner pieces formed of stone or other materials for use as building faces or for cutting flat pieces is disclosed herein. The cutting apparatus includes a frame with a first and a second conveyor operatively attached to the frame. The first and the second conveyors are configured to carry a workpiece from a first end of the frame to the second end of the frame. The first conveyor is disposed at an angle of about 45 degrees to a ground surface supporting the cutting apparatus. The second conveyor is disposed at an angle of about 45 degrees to the ground surface supporting the cutting apparatus, wherein the second conveyor is positioned perpendicularly to the first conveyor so as to form a V-shaped channel therewith.

Abstract: An automatic machine for arrissing the edges of glass sheets, comprising devices that allow to work glass sheets by way of rigid tools, such as diamond grinding wheels, by acting simultaneously on the two face edges along the perimeter of the sheet. The machine comprises at least one working head, provided with a tool with a probe and feedback circuits for grinding symmetrically the glass sheet and following the perimetric profile of the sheet by a combined action of moving the glass sheet and at least one working head.

Abstract: A polishing pad thickness measuring method measures the thickness of a polishing pad attached to an upper surface of a surface plate. The polishing pad thickness measuring method measures a first distance between an upper surface of the polishing pad and a reference position on a vertical line perpendicular to the surface of the polishing pad and a second distance between an upper surface of the surface plate and the reference position on the vertical line, and calculates the thickness of the polishing pad from the difference between the first and second distances.

Abstract: Methods and apparatus for spectrum-based endpointing. An endpointing method includes selecting a reference spectrum. The reference spectrum is a spectrum of white light reflected from a film of interest on a first substrate and has a thickness greater than a target thickness. The reference spectrum is empirically selected for particular spectrum-based endpoint determination logic so that the target thickness is achieved when endpoint is called by applying the particular spectrum-based endpoint logic. The method includes obtaining a current spectrum. The current spectrum is a spectrum of white light reflected from a film of interest on a second substrate when the film of interest is being subjected to a polishing step and has a current thickness that is greater than the target thickness. The method includes determining, for the second substrate, when an endpoint of the polishing step has been achieved. The determining is based on the reference and current spectra.

Abstract: A nozzle for spraying sublimable solid particles and preventing frost from forming at surfaces of the nozzle. The nozzle includes: a cleaning agent block for phase-changing a cleaning agent into a snow containing sublimable solid particles; a nozzle block for growing the cleaning agent snow through adiabatic expansion and spraying the grown cleaning agent snow onto a surface of an object; a carrier gas block for supplying a carrier gas to the nozzle block to mix with the cleaning agent snow; and a heater for heating at least a portion of the carrier gas supplied from the carrier gas supply source. Fine dry ice particles and liquid CO2, passing through a solenoid valve from a CO2 reservoir tank and a pressure drop of a flow rate regulation valve, are introduced into the spray nozzle and then mixed with the carrier gas, such as N2 or purified air, and discharged.

Abstract: The shaper device for shaping an ophthalmic lens comprises a blocking support on a blocking axis, a shaper tool, an electronic or computer unit for controlling the position of said shaper tool, and a man/machine interface connected to said electronic or computer unit, and comprising a display screen (253) and input means for inputting numerical values.

Abstract: A system for lapping a head on a wafer including at least one head each having an electrical lapping guide (ELG), a plurality of wafer contacts in electrical communication with the ELG, and a closure formed thereon defining a slot in which the wafer contacts are positioned, the system comprising a lapping cable coupled to a testing device, the lapping cable including a plurality of lapping cable contacts extending outwardly therefrom; wherein the lapping cable contacts are removably positionable in electrical communication with the wafer contacts during a lapping process. Additional systems and methods are also presented.

Abstract: This is to present a protecting device for processing tool of machine tool used in a machine tool of a type of machining such as grinding and cutting a work by rotating a processing tool mounted on a rotary spindle, for protecting the processing tool by preventing from damage or breakage due to excessive torque load. In a honing machine, for example, a magnetic coupling device (25) for transmitting the rotating force of a servo motor (16) to a rotary spindle (2) by magnetic action is provided between the rotary spindle (2) on which a honing tool (1) as processing tool is mounted and the servo motor (16) of a spindle rotation driving part (3) for rotating the rotary spindle (2), and the magnetic transmission torque of the magnetic coupling device (25) for transmitting the rotating force is set smaller than a specified torque load applied to the honing tool (1) (for example, breakage torque of honing tool (1)).

Abstract: In a mask blank substrate to be chucked by a mask stage of an exposure system, the flatness of a rectangular flatness measurement area excluding an area of 2 mm inward from an outer peripheral end surface on a main surface of the mask blank substrate on its side to be chucked by the mask stage is 0.6 ?m or less, and at least three of four corner portions of the flatness measurement area each have a shape that rises toward the outer peripheral side.

Abstract: A method of determining pattern evolution of a semiconductor wafer during chemical mechanical polishing prior to polishing end point by determining the periodic change in the variance and FT or FFT frequency spectra of shear force and change in variance and FT or FFT frequency spectra of COF, shear force and/or down force between the semiconductor wafer and the polishing pad.

Abstract: A method for treating an area of a semiconductor wafer surface with a laser for reducing stress concentrations is disclosed. The wafer treatment method discloses treating an area of a wafer surface with a laser beam, wherein the treated area is ablated or melted by the beam and re-solidifies into a more planar profile, thereby reducing areas of stress concentration and stress risers that contribute to cracking and chipping during wafer singulation. Preferably, the treated area has a width less than that of a scribe street, but wider than the kerf created by a wafer dicing blade. Consequently, when the wafer is singulated, the dicing blade will preferably saw through treated areas only. It will be understood that the method of the preferred embodiments may be used to treat other areas of stress concentration and surface discontinuities on the wafer, as desired.

Abstract: An apparatus for processing a chamfering of an eyeglass lens, including means for inputting a width of the chamfering and a range of the chamfering from a periphery of a lens shape at at least one position adjacent to a nose or far away from the nose, arithmetic control means for obtaining a trace for the chamfering on a refractive surface of the eyeglass lens and obtaining the position of the edge end of the eyeglass lens after the processing of the chamfering, and means for displaying the trace of the chamfering by overlapping the lens shape.

Abstract: A method for processing a chamfering of an eyeglass lens, including the steps of inputting a width of the chamfering and a range of the chamfering from a periphery of a lens shape at a position adjacent to a nose and/or a position far away form the nose, obtaining a trace of the chamfering on a refractive surface of the eyeglass lens and displaying the trace of the chamfering by overlapping the lens shape.

Abstract: A method of lapping a magnetic head slider includes a step of lapping a lapping surface of a row bar provided with a plurality of MR read head elements arranged along at least one line, a step of obtaining at least one output signal from at least one of the plurality of MR read head elements of the row bar during lapping, the at least one output signal corresponding to element resistance, a step of detecting at least one peak value of the obtained at least one output signal, and a step of controlling an amount of lapping of the row bar depending upon the detected at least one peak value.

Abstract: In an eyeglass lens processing apparatus for beveling a peripheral edge of an eyeglass lens, if the high curve lens processing mode is selected by the mode selector, a computing unit acquires a high curve bevel path for locating the bevel apex on a front surface curve of the eyeglass lens or for locating the bevel apex at a position shifted by a predetermined quantity from the front surface curve toward the rear side on the basis of the edge position information acquired by the edge position detector, thereby providing high curve beveling data for the rear surface beveling grindstone, or for the front surface and rear surface beveling grindstones; and a beveling controller bevels the peripheral edge of the eyeglass lens by the rear surface beveling grindstone, or by the front surface and rear surface beveling grindstones on the basis of the high curve beveling data.

Abstract: Embodiments described herein provide a method for polishing a substrate surface. The methods generally include storing processing components in multiple storage units during processing, and combining the processing components to create a slurry while flowing the processing components to a polishing pad. A substrate is polished using the slurry, and the thickness of a material layer disposed on the substrate is determined. The flow rate of one or more processing components is then adjusted to affect the rate of removal of the material layer disposed on the substrate.

Abstract: A method and apparatus for buffing tread from a tire carcass, the method comprising the steps of: receiving a signal from a sensor, the signal generated as a function of a distance between the sensor and a belt in the tire and a tire characteristic; selecting a signal response curve from a plurality of signal response curves, the selected signal response curve representing the function of the distance between the sensor and the tire belt and the tire characteristic; determining from the response curve the distance between the sensor and the belt for the signal response received; buffing tread from the tire until the distance between the sensor and the belt reaches a final distance.

Abstract: A sander can include a housing, an indicator disposed on the housing, and a motor assembly in the housing. The motor assembly can include an output member. A platen can be driven by the output member. A sensor assembly can be configured to sense a condition in which a pressing force in excess of a predetermined force is applied to the sander in a direction normal to the platen and generate a sensor signal in response thereto. A controller can receive the sensor signal from the sensor assembly and control operation of the indicator in response thereto. The sensor assembly can include a force sensing resistor. The force sensing resistor can be disposed adjacent to a gripping portion of the power sanding tool. The indicator can include at least one light source. The controller can illuminate the light source according to a schedule.

Abstract: Head elements are formed on a wafer to suppress deterioration in pinning strength of a pinned layer, which is caused by ESD generated during air bearing surface polishing of a thin film magnetic head. The wafer is cut into rovers in each of which are connected head elements. Rover air bearing surfaces are polished until an MR elements attain a predetermined height. A final polishing step finishes air bearing surfaces by applying an electroconductive polishing liquid to achieve a predetermined shape and surface roughness with high accuracy. A pinning defect occurrence rate is reduced by suppressing deterioration in pinning strength of a pinned layer of a read element. To achieve this, a specific resistance of the electroconductive polishing liquid is controlled to 5 G?·cm or less. A shallow rail and a deep rail are formed on the air bearing surfaces, and the rover is cut into thin film magnetic heads.

Abstract: A method of forming bare silicon substrates is described. A bare silicon substrate is measured, wherein measuring is performed by a non-contact capacitance measurement device to obtain a signal at a point on the substrate. The signal or a thickness indicated by the signal is communicated to a controller. An adjusted polishing parameter according to the signal or thickness indicated by the signal is determined. After determining an adjusted polishing parameter, the bare silicon substrate is polished on a polisher using the adjusted polishing parameter.

Abstract: A computer-implemented method includes polishing substrates simultaneously in a polishing apparatus. Each substrate has a polishing rate independently controllable by an independently variable polishing parameter. Measurement data that varies with the thickness of each of the substrates is acquired from each of the substrates during polishing with an in-situ monitoring system. A projected time at which each substrate will reach a target thickness is determined based on the measurement data. The polishing parameter for at least one substrate is adjusted to adjust the polishing rate of the at least one substrate such that the substrates reach the target thickness closer to the same time than without the adjustment.

Abstract: At least one wafer is suspended on a respective jig shaft above a polishing platen. The degree of parallelism between the wafer and the polishing platen is controlled using a three-point suspension, which allows for planar pitch adjustments using vertical actuation algorithms. As the wafer is lowered into contact against the polishing platen, a load cell senses how much of the weight of the jig shaft, wafer mount and wafer continues to be supported by the jig. The vertical displacement of the wafer is controlled using a linear actuator responsive to a signal from the load cell. Vertical actuation of the wafer serves to increase or decrease this amount of supported weight, in turn decreasing or increasing the amount of applied down-force exerted between the wafer and the platen. A compression spring is used to increase the resolution of the pressure control. Finally, system components exposed to the work environment are encapsulated by chemically resistive components to prevent corrosion of system components.

Abstract: A device grinding method comprising the steps of holding the undersurface of a protective member which supports a plurality of devices by affixing their front surfaces onto the top surface of the protective member, on the chuck table of a grinding machine and grinding the rear surfaces of the plurality of devices held on the chuck table through the protective member by a grinding means while the chuck table is rotated, to form the thicknesses of the plurality of the devices to have a predetermined value, wherein the metering portion of a non-contact thickness metering equipment is brought to a position right above the rotating rotation locus of a predetermined device out of the plurality of devices supported on the chuck table through the protective member, the rear surfaces of the plurality of devices are ground by the grinding means while the thickness of the rotating predetermined device is measured with the non-contact thickness metering equipment, and the grinding by the grinding means is terminated when

Abstract: A method of conditioning a CMP polishing pad to attain a desired thickness profile in a polished layer on a wafer is disclosed. The incoming thickness profile of the layer to be polished, the thickness profile of the polishing pad, a polish rate of layer as a function of pressure and the removal rate of polishing pad material by a conditioning block are used to compute a sweep pattern for the conditioning block which will produce a desired thickness profile on the polishing pad. The method may be applied to maintaining the desired profile on the polishing pad during the course of polishing multiple wafers. The pad profile may be adjusted to keep pressure between the pad and the wafer to a safe limit to reduce polishing defects.

Abstract: A visual feedback system and method for airfoil polishing is disclosed. In one aspect there is a system for providing visual feedback during a polishing operation of a workpiece. In this system there is a model having a representation of a desired shape of the workpiece. A scanning system generates a representation of a current shape of the workpiece while in-process during the polishing operation. A comparator compares the current shape of the workpiece to the desired shape of the workpiece. An illumination system highlights the workpiece with visible light during the polishing operation. The highlighting of the workpiece with visible light is a function of the comparison between the current shape and the desired shape. The illumination system highlights a portion of the workpiece that needs additional polishing to conform to the desired shape.

Abstract: A method of polishing objects using an apparatus comprised of a rotary positioning device comprising a turret; a base mounted on the turret; a drive wheel connected to a rotatable shaft, the drive wheel having a perimeter, and the rotatable shaft disposed in a housing. The polishing wheel assembly may include an elongated arm including a proximal end joined to the base, and a distal end; a rotatable polishing wheel supported at the end of the elongated arm; and a polishing belt comprising an inner surface and an outer surface, the inner surface engageable with the perimeters of the drive wheel and the polishing wheel. The method is comprised of contacting the outer surface of the polishing belt to a contact region of the surface of the object; and controlling the contact region by rotating the elongated arm around the turret axis.

Abstract: The present invention relates to a substrate polishing apparatus and a substrate polishing method for polishing a substrate such as a semiconductor wafer to a flat finish. The substrate polishing apparatus includes a polishing table (100) having a polishing surface (101), a substrate holder (1) for holding and pressing a substrate (W) against the polishing surface (101) of the polishing table (100), and a film thickness measuring device (200) for measuring a thickness of a film on the substrate (W). The substrate holder (1) has a plurality of pressure adjustable chambers (22 to 25), and pressures in the respective chambers (22 to 25) are adjusted based on the film thickness measured by the film thickness measuring device (200).

Abstract: A method and apparatus for polishing or planarzing a substrate by a chemical mechanical polishing process. In one embodiment a method of processing a semiconductor substrate is provided. The method comprises positioning a substrate on a polishing apparatus comprising a polishing pad assembly, delivering a polishing slurry to a surface of the polishing pad assembly, polishing the substrate with the surface of the polishing pad assembly, monitoring the removal rate of material from a plurality of regions on the surface of the substrate, determining whether the plurality of regions on the surface of the substrate are polishing uniformly, and selectively delivering a polishing slurry additive to at least one region of the plurality of regions to obtain a uniform removal rate of material from the plurality of regions on the surface of the substrate, wherein the removal rate of material from the at least one region is different than at least one other region of the plurality of regions.

Abstract: A grinding method and to a cylindrical grinding machine grinds metal rod that is pushed through a chuck of a workpiece spindle head. Two backrest seats are ground on and two backrests are then seated. The support of an end area enables a front cone to be ground. A grinding wheel comprised of two different individual wheels serves to grind the front cone and is advanced toward the round rod in the X-direction. The front cone is lodged in a hollow punch at a front end of a quill by displacement of the quill. The desired cylindrical grinding a final contour of the end area is done. Working the rod is done with a single chucking and the end area is cut off from the round rod by one of the individual wheels.

Abstract: According to a method for the fine machining of internal surfaces of bore holes in tools by fine boring and subsequent honing, the following steps are executed: Fine boring of at least one bore hole (131) in a tool (130) by means of a fine boring tool (128) of a fine boring device (120) for the creation of a fine bored hole; Transfer of the tool to a machining position of a honing device (140) for the machining of the fine bored bore hole by means of a honing tool (148A) of the honing device; Measurement of the fine bored bore hole with one of the measurement devices (160) allocated to the honing device in the machining position for the creation of at least one bore hole measurement signal representing the properties of the fine bored bore hole. The fine boring device is controlled subject to the bore hole measuring signal.

Abstract: Apparatus and methods are provided to polish a notch of a substrate. The invention includes a polishing head adapted to apply a polishing tape against the notch of the substrate, including: a plunger; and an actuator, wherein the actuator is adapted to move the plunger with respect to the polishing tape. Numerous other aspects are provided.

Abstract: A grinding machine includes: a workhead (22) that rotatably supports a solid cylindrical or hollow cylindrical workpiece (W); a grinding wheel (43) that moves relative to the workhead (22) in a direction that intersects with a rotation axis of the workhead (22) to grind an outer peripheral surface of the workpiece (W); a measuring apparatus (50) that measures a position of an outer peripheral surface of the workpiece (W) corresponding to a rotation angle of the workhead (22); an outer peripheral surface shape calculation unit (64) that calculates an outer peripheral surface shape of the workpiece (W) on the basis of the position of the outer peripheral surface of the workpiece (W) measured by the measuring apparatus (50) during grinding; and a grinding condition determination unit (65) that determines a condition of grinding, which is performed after measurement by the measuring apparatus (50), on the basis of the calculated outer peripheral surface shape of the workpiece (W).

Abstract: An adjustable handle assembly for a road surface cutting saw is provided that includes a back plate attached to the saw housing, an outer gear attached to the back plate, a bracket assembly including an inner gear, a tubular member slidably attached to the bracket assembly, and an adjustment lever having a threaded engagement end. The adjustment lever secures the bracket assembly to the saw such that the inner gear engages the outer gear. When the adjustment lever is loosened a bias spring biases the bracket assembly away from the saw such that the inner gear disengages from the outer gear to thereby allow rotation of the handle assembly to a desired operating position.

Abstract: In-situ monitoring during processing of a substrate includes processing a conductive film on a substrate in a semiconductor processing apparatus and generating a signal from an eddy current sensor during processing. The signal includes a first portion generated when the eddy current sensor is adjacent the substrate, a second portion generated when the eddy current sensor is adjacent a metal body and not adjacent the substrate, and a third portion generated when the eddy current sensor is adjacent neither the metal body nor the substrate. The second portion of the signal is compared to the third portion of the signal and a gain is determined based at least on a result of the comparing, and the first portion of the signal is multiplied by the gain to generate an adjusted signal.

Abstract: A method for (a) determining the shear force between a wafer head and a polishing pad in a polishing tool using a CMP polishing tool with a plate above the wafer head which hangs or rests on the plate. The plate is connected to the CMP polishing tool by (b) low friction motion means (c). A load cell sensor is fixed to the framework of the polishing tool or another immovable structure. (d) The load cell determines the force from the leading edge of the plate when the wafer head is in contact with the polishing pad. (e) Signals from the load cell sensor reporting the shear force. A CMP polishing tool which includes elements corresponding to each of points (a)-(e) in the above method.

Abstract: A method of processing a semiconductor wafer using a double side grinder of the type that holds the wafer in a plane with a pair of grinding wheels and a pair of hydrostatic pads. The method includes measuring a distance between the wafer and at least one sensor and determining wafer nanotopology using the measured distance. The determining includes using a processor to perform a finite element structural analysis of the wafer based on the measured distance.

Abstract: In a grinding machine, a bed 10 has secured thereon a work head 11 which rotatably supports a work spindle 12 for supporting a workpiece W and mounts thereon a slide base 15 reciprocatively movable in a Z-direction parallel to the axis of the work spindle, and a wheel head 16 carrying a rotating grinding wheel 17 is reciprocatively movable on the slide base in an X-direction intersecting with the Z-direction. A measuring device 25 for measuring the dimension of the workpiece ground with the grinding wheel is mounted on an extreme end of a support arm 21 secured to the slide base to extend in the X-direction, through an actuator device 23 which is operable for moving the measuring device between a measuring position for engagement with the workpiece and a parked position for disengagement therefrom. The support arm passes over the workpiece, or passes through a space between the bed and the workpiece, or passes through the inside of the bed.

Abstract: A method and apparatus for measuring the polishability of a solid material such as a dental restorative material includes using a series of apparatus to perform the steps of forming the material into a desired specimen with a generally planar surface, conditioning the surface by abrasion, measuring the abraded surface with a profile determination device, optionally measuring the amount of material abraded from the surface and the gloss of the abraded surface, polishing a portion of the abraded surface with a polishing device at a controlled load for a pre-determined time and measuring the roughness and/or gloss of the polished surface followed by comparison thereof to the corresponding measurements of the unpolished, conditioned portion of the specimen surface. Polishing materials and devices may also be tested using the apparatus and method for polishing a standardized material.