Abstract: There is disxlosed a process for preparing a novel superconducting material. This material has the formula YBa.sub.2 Cu.sub.3 O.sub.7-x wherin x is equal to or less than 0.3, the material has a bulk density of from about 90 to about 96 percent, and the hardness of the material is in excess of 5.0 GigaPascals.In the first step of the process, there is provided a pure powder comprised of barium, yttrium, and copper in a mole ratio of 2/1/3. Such powder is comprised of less than 1.0 mole percent of impurity.In the second step of the process, the powder is compacted. Thereafter, the compacted powder is fired at a temperature of from about 1,000 to about 1,300 degrees Clesius for a period not exceeding 12 hours.In the third step of the process, the temperature of the fired powder is reduced at least 20 degrees Celsius to a first reduced temperature within the range of from about 960 to about 990 degrees Celsius, and the powder is than held within this reduced temperature range for at least 1 hour.
Type:
Grant
Filed:
June 9, 1988
Date of Patent:
November 20, 1990
Assignee:
Alfred University
Inventors:
Jenifer Taylor, Prinya Sainamthip, David F. Dockery
Abstract: A superconductive ring or coil is irradiated with a light ray so that its superconducting state is destroyed for a short period of time. Under the destruction of the superconducting state, removal of energy from the superconductive ring or coil or storage of energy therein is stably controlled.
Abstract: A method is shown of applying in accordance with a pattern thin layers of an oxidic superconductive material onto a substrate in which a copper oxidic based material that after heating is rendered superconducting at a desired service temperature is covered in a desired pattern with a composition that renders the underlying oxidic material non-superconducting.
Abstract: A patterned crystalline superconducting layer is formed by first providing a copper oxide lift-off layer under an amorphous metal oxide superconducing precursor layer and then photolithographically forming a pattern in the layers. The patterned layers are then heat treated to form the final crystalline superconducting layer.
Abstract: This invention concerns a novel superconductive oxide crystal and a production process thereof, the novel superconductive oxide crystal comprising a superconductive oxide crystal composed of a rare earth element, an alkaline earth meal, copper, and oxygen, in which copper (II) oxide (CuO)) is dispersed like detached islands.
Abstract: A metalorganic deposition method is disclosed for manufacturing a heavy pnictide superconducting oxide film on a substrate, in which a mixed metalorganic precursor is coated and heated to its thermal decomposition temperature to create an amorphous mixed metal oxide layer. The amorphous layer is then converted to a crystalline coating by further heating followed by cooling in the presence of oxygen.
Type:
Grant
Filed:
May 31, 1989
Date of Patent:
August 21, 1990
Assignee:
Eastman Kodak Company
Inventors:
John A. Agostinelli, Gustavo R. Paz-Pujalt, Arun K. Mehrotra, Liang-Sun Hung
Abstract: A novel process for preparing superconductor of bismuth-containing compound oxide such as Bi--Sr--Ca--Cu system.In the present invention, firstly an intermediate compound oxide containing metal elements of the superconductor except bismuth is prepared and then the intermediate compound oxide is contacted with bismuth oxide vapour at a temperature between 750.degree. and 950.degree. C. so that bismuth oxide is reacted with said intermediate compound oxide.
Abstract: Oxide materials having the formulae (L.sub.x A.sub.1-x).sub.i MO.sub.y, (L.sub.x A.sub.1-x).sub.i -M.sub.1-z Cu.sub.z O.sub.y and (L.sub.x A.sub.1-x).sub.i MO.sub.j-.delta. G.sub.k, wherein L is Sc, Y, lanthanides, etc.; A is Ba, Sr, Ca, etc.; M is V, Nb, Ta, Ti, Zr or Hf; 0<x<1; 0<z<1; i=1, 3/2 or 2; 0<y.ltoreq.4; G is F, Cl or N; .delta. is oxygen defect, and having a perovskite-like crystal structure, show superconductivity at a temperature higher than the liquid nitrogen temperature these oxide materials can be produced by a substitution diffusion reaction between a substrate and a film or layer deposited on the substrate.