Abstract: Provided is a memory system and wear-leveling method. A memory system includes a flash memory device and a memory controller. The flash memory device includes a plurality of memory blocks, each including a plurality of memory cells. The memory controller is configured to control the flash memory device based on erase event information and error checking and correction (ECC) event information of each of the memory blocks such that use of the memory blocks is distributed more uniformly.

Abstract: Some embodiments include apparatuses and methods having a first interface to communicate with a processing unit, a second interface to communicate with a memory device, and a module coupled to the first and second interfaces. In at least one of the embodiments, the module can be configured to obtain information stored in the memory device and perform at least one of testing and repairing of a memory structure of the memory device based at least in part on the information.

Abstract: A method and apparatus are provided for error correction of a memory by using a first memory (18) and second memory (14) to perform error correction code (ECC) processing on data retrieved from the first memory and to use status control bits (35-37) in the second memory to detect and manage hard and soft errors identified by the ECC processing.

Abstract: A technique of selectively activating inactive distributed storage units of a dispersed storage network to retrieve a threshold number of data slices that are required to recover the original data, instead of utilizing all of the distributed storage units.

Abstract: A method for operating a memory device includes performing a single read operation that includes additional one or more combinations of read and/or write cycles, and performing a single write operation that includes additional one or more combinations of read and/or write cycles. For example, a method for auto-correcting errors in a memory device having plurality of memory cells includes performing a first read operation of the memory cell to obtain a first read data value, performing a first write operation to the memory cell to write a second data value, which is a complement of the first data value, into the memory cell, performing a second read operation of the memory cell to obtain a third data value, and performing a second write operation to the memory cell to write a fourth data value, which is a complement of the third data value, to the memory cell.

Abstract: Methods, port units, and computer readable storage media for testing network connections are disclosed. A plurality of Transmission Control Protocol (TCP) connections with one or remote devices may be established via a network. Metadata may be extracted from TCP packets transmitted via the plurality of TCP connections and TCP packets received via the plurality of TCP connections. The extracted metadata may be stored in a memory.

Abstract: Provided is a method of preventing simultaneous activation of redundancy memory line or spare word lines, the method including: programming a fail address of a memory line determined to be defective; reprogramming the fail address if a first spare line for the memory line is determined to be defective; storing additional information with respect to the reprogrammed fail address; and activating a second spare line and inactivating the first spare line, referring to the additional information.

Abstract: A memory module including a first memory, a second memory, a test module, and a control module. The first memory is configured to store pages of data to be tested for errors. The second memory is configured to store addresses for the pages of data and store copies of the pages of data. The test module is configured to perform testing on the pages of data stored in the first memory. The control module is configured to, prior to the testing being performed by the test module on the pages of data stored in the first memory, cause the second memory to store the addresses and the copies of the pages of data stored in the first memory and, subsequent to the testing being performed by the test module, store the copies of the pages of data to the first memory based on the addresses stored in the second memory.

Abstract: A storage drive including first, second, third, fourth and fifth modules. The first module is configured to control transfer of blocks of data between a host device and the storage drive. The second module is configured to transfer the blocks of data to and from a non-volatile semiconductor memory in the storage drive. The third module is configured to generate a first descriptor, which describes a transfer of blocks of data between the second module and the non-volatile semiconductor memory. The fourth module is configured to, according to the first descriptor, generate second descriptors. Each of the second descriptors corresponds to a respective one of the blocks of data. The fifth module is configured to generate instruction signals based on the second descriptors. The second module is configured to, based on the instruction signals, transfer the blocks of data between the first module and the non-volatile semiconductor memory.

Abstract: The present invention provides systems and methods for logically organizing data for storage and recovery on a data storage medium using a multi-level format. The present invention also provides systems and methods for protecting data stored on data storage medium so that the data may be recovered without errors.

Abstract: A data processing device includes a first register unit, a second register unit and a data handling unit. The first register unit generates an address signal based on a first control signal. The address signal points to a region in an external storage device where first data is stored. The second register unit receives the first data output from the external storage device, generates second data based on the first data and a second control signal, and selectively generates a detectable error in the second data according to an operating mode when a fault is injected into the first data. A bit number of the detectable error in the second data is larger than a bit number of the fault injected into the first data. The data handling unit selectively processes the second data depending on whether the detectable error is generated.

Abstract: Techniques are presented for dealing with errors that arise from cluster fails, where a number of memory cells in the same area fail. An ECC code word can tolerate a given total amount of error while still being able to still be decoded, so that if error due to clusters can be identified and removed or lessened, it may be possible to still decode the word not otherwise decodable. After identifying possible error bit cluster locations, one or more bits in the cluster locations are flipped to see if the data content of the code word can be extracted. For embodiments using LDPC ECC code, uncertainty can be added for the bits of a suspected cluster location. To reduce the effects of cluster failures, code words can be interleaved within a page and the difference code words can have differing levels of ECC capability.

Abstract: Some embodiments include apparatuses and methods having a first interface to communicate with a processing unit, a second interface to communicate with a memory device, and a module coupled to the first and second interfaces. In at least one of the embodiments, the module can be configured to obtain information stored in the memory device and perform at least one of testing and repairing of a memory structure of the memory device based at least in part on the information.

Abstract: A semiconductor memory device includes memory blocks including pages connected to plural main cells, a spare block, including pages connected to spare cells, configured to store a random seed for randomization to the spare cells connected to each page, page buffers configured to scramble data inputted for program operation by using random seed read from a page of the spare block selected by a control signal to transmit the scrambled data to the bit line, and configured to descramble data read from a main cell selected for read operation and output the descrambled data, and a controller configured to output the control signal to select a page of the spare block corresponding to an address of a page of the memory block selected for the programming or reading, and configured to control a scramble operation and a descramble operation of the page buffers.

Abstract: A memory device with background built-in self-testing (BBIST) includes a plurality of memory blocks; a memory buffer to offload data from one of the plurality of memory blocks temporarily; and a memory block stress controller to control a stress test applied to the one of the memory blocks when the data is temporarily offloaded on the memory buffer. The stress test tests for errors in the one of the plurality of the memory blocks.

Abstract: A semiconductor memory device includes a memory cell array including a normal region for storing a plurality of data, an error information region for storing a plurality of error information data corresponding to the plurality of normal data, respectively, and a redundancy region for replacing the normal region, an error detection unit suitable for detecting an error on the plurality of data in response to the plurality of error information data, and storing an error location information, which indicates a storage region of a data having an error in the normal and redundancy regions, based on an error detection result, and a repair operation unit suitable for replacing the storage region, which is indicated by the error location information, by the redundancy region during a repair operation period.

Abstract: A CAM device includes a CAM array that can implement column redundancy in which a defective column segment in a selected block can be functionally replaced by a selected column segment of the same block, and/or by a spare column segment of the same block.

Abstract: A device for repairing a memory device may include spare memory blocks that may replace corresponding memory blocks that include at least one non-operational memory cell. One or more registers may be coupled in a chain to store memory repair information. A memory repair module may identify, upon a power-up test of the memory device, non-operational memory cells, which are incremental to previously identified defective memory cells in previous power-up tests, and may provide corresponding memory repair information of the identified non-operational memory cells. A logic circuit may block access to one or more registers and may facilitate storing, in one or more unblocked registers, the corresponding memory repair information of the identified one or more non-operational memory cells. The memory repair module may swap a memory block including the identified non-operational memory cells with a spare memory block based on content of the one or more unblocked registers.

Abstract: Methods and apparatuses are disclosed in which a repair instruction, such as from a tester, causes an integrated circuit undergoing testing to substitute defective locations of a first set of memory cells in the integrated circuit with a second set of memory cells in the integrated circuit, despite the repair instruction omitting the defective locations of the first set of memory cells of the integrated circuit.

Abstract: A memory module includes a plurality of memory chips stacked on top of one another, each of the plurality of memory chips including a memory cell unit that is divided into a plurality of blocks, and an address scrambling circuit that processes an input address signal and that selects a block to be operated.

Abstract: Technologies are described herein for generating field replaceable unit (FRU) information files in a format that is readable by a management controller in accordance with IPMI such that the FRU and the management controller are interoperable. In particular, a FRU installation station is in operative communication with a general purpose computer comprising a FRU information conversion module. A script utilized by the FRU information conversion module is configured to receive FRU information relating to a specified FRU and convert the information FRU binary files or a FRU image binary. The FRU binary files or FRU image binary are then received by the FRU installation station where they are subsequently transmitted to the inventory device of the specified FRU storage space according to the specified IPMI standard.

Abstract: A data storage device includes: a nonvolatile memory device comprising a plurality of memory blocks, each including a plurality of pages; and a controller suitable for controlling an operation of the nonvolatile memory device in response to a request from an external device, wherein the controller determines whether or not a memory block including damaged pages in which stored data are damaged occurs in the memory blocks, sets a memory block including the damaged pages to an invalid memory block based on the determination result, and regenerates free pages of the memory block set as the invalid memory block into a valid memory block.

Abstract: To decrease the burden of digital processing, provided is an AD conversion apparatus comprising a pattern generating section that, for each target bit specified one bit at a time moving downward in the output data, generates a pattern signal having a pulse width or number of pulses corresponding to a weighting of the target bit; an integrating section that integrates the pattern signals according to a judgment value for judging a value of the target bit each time a pattern signal is generated, and outputs a reference signal obtained by accumulating the integrated value of each pattern signal; a comparing section that, each time generation of a pattern signal is finished, compares the input signal to the reference signal; and an output section that outputs the output data to have values corresponding to the comparison results obtained after each generation of a pattern signal corresponding to a bit is finished.

Abstract: A system for managing redundancy in a memory device includes memory arrays and associated periphery logic circuits, and redundant memory arrays and associated redundant periphery logic circuits. The memory arrays and a first set of logic circuits associated with the periphery logic circuits corresponding to the memory arrays are connected to the power supply by way of memory I/O switches. The redundant memory arrays and associated redundant periphery logic circuits are connected to the power supply by way of redundant I/O switches. The memory and redundant I/O switches are switched on/off based on an acknowledgement signal generated during a built-in-self-test (BIST) operation of the memory device.

Abstract: The disclosed embodiments provide a dynamic memory device, comprising a set of dynamic memory cells and a set of replacement dynamic memory cells. The set of replacement dynamic memory cells includes data cells which contain replacement data bits for predetermined faulty cells in the set of dynamic memory cells, and address cells which contain address bits identifying the faulty cells, wherein each data cell is associated with a group of address cells that identify an associated faulty cell in the set of dynamic memory cells. The dynamic memory device also includes a remapping circuit, which remaps a faulty cell in the set of dynamic memory cells to an associated replacement cell in the set of replacement cells.

Abstract: A one-time program cell array circuit includes a cell array configured to include a plurality of one-time program memory cells, and to program an inputted program data and output a stored program data as a read data, a code generation circuit configured to generate an error correction code to be programmed in the cell array based on the inputted program data during a program operation; and an error detection circuit configured to detect an error of the read data based on the error correction code and the read data that are outputted from the cell array during a read operation and to be enabled or disabled in response to a first enable signal. The concern caused by applying the error correction scheme to the one-time program cell array circuit may be resolved by controlling the enabling or disabling of an error correction scheme, while increasing reliability.

Abstract: In a method of executing a BIST operation on IC memory arrays having a common BIST control unit, a first BIST sequence is initiated. Each address for the arrays is incremented. The BIST control unit receives a signal indicating a maximum valid address in the array is reached, receiving a plurality of maximum valid addresses, which are recorded. A single relatively highest maximum valid address is determined. A first mode, which prevents BIST testing, is engaged in each array having reached the maximum valid address. A second BIST sequence is initiated based on having received the signal indicating a maximum valid address is reached from all the arrays connected to the common BIST control unit. An address count is decremented from the single relatively highest maximum valid address. The first mode is disengaged for each array as the address count reaches each of the maximum valid addresses during the decrementing.

Abstract: An operating method for a memory controller that controls operation of a nonvolatile memory device that stores data according to a plurality of multiple blocks includes; determining that a block among the plurality of blocks is a bad block, and then determining a type of the bad block, determining a number of free blocks, and providing a replacement block to the nonvolatile memory device for the bad block using a replacement block provision policy that is responsive to the type of the bad block and the number of free blocks.

Abstract: The present invention is directed to a bit-level memory controller and method adaptable to managing defect bits of a non-volatile memory. A bad column management (BCM) unit retrieves a bit-level mapping table, in which defect bits are respectively marked, based on which the BCM unit constructs a bit-level script (BLS) that contains a plurality of entries denoting defect-bit groups respectively. An internal buffer is configured to store data managed by the BCM unit according to the BLS.

Abstract: A method for managing a flash memory that includes a plurality of primary cells and a plurality of spare cells includes interrogating the flash memory to determine which spare cells have been used to replace respective primary cells and using at least a portion of a remainder of the spare cells as reference cells.

Abstract: A memory device with a background built-in self-repair module (BBISRM) includes a main memory, an arbiter, and a redundant memory to repair a target memory under test (TMUT). The memory device also includes a background built-in self-test module (BBISTM) to identify portions of memory needing background built-in self-repair (BBISR). The BBISRM or the BBISTM can operate simultaneously while the memory device is operational for performing external accesses during field operation. The BBISR can detect and correct a single data bit error in the data stored in the TMUT. The arbiter configured to receive a read or write access memory request including a memory address, to determine if the memory address of the read or write access memory request matches the memory address mapped to the selected portion of the redundant memory, and to read or write data from the selected portion of the redundant memory, respectively.

Abstract: Memory systems, systems and methods are disclosed that may include a plurality of stacked memory device dice and a logic die connected to each other by through silicon vias. One such logic die includes an error code generator that generates error checking codes corresponding to write data. The error checking codes are stored in the memory device dice and are subsequently compared to error checking codes generated from data subsequently read from the memory device dice. In the event the codes do not match, an error signal can be generated. The logic die may contain a controller that records the address from which the data was read. The controller or memory access device may redirect accesses to the memory device dice at the recorded addresses. The controller can also examine addresses or data resulting in the error signals being generated to identify faults in the through silicon vias.

Abstract: A read only memory (ROM) with redundancy and methods of use are provided. The ROM with redundancy includes a programmable array coupled to a repair circuit having one or more redundant repairs. The one or more redundant repairs include a word address match logic block, a data I/O address, and a tri-state buffer. The word address match logic block is provided to the tri-state buffer as a control input and the data I/O address is provided to the tri-state buffer as an input. An output of the tri-state buffer of each redundant repair is provided as a first input to one or more logic devices. One or more data outputs of a ROM bit cell array is provided as a second input to a respective one of the one or more logic devices.

Abstract: Architecture that implements error correcting pointers (ECPs) with a memory row, which point to the address of failed memory cells, each of which is paired with a replacement cell to be substituted for the failed cell. If two error correcting pointers in the array point to the same cell, a precedence rule dictates the array entry with the higher index (the entry created later) takes precedence. To count the number of error correcting pointers in use, a null pointer address can be employed to indicate that a pointer is inactive, an activation bit can be added, and/or a counter, that represents the number of error correcting pointers that are active. Mechanisms are provided for wear-leveling within the error correction structure, or for pairing this scheme with single-error correcting bits for instances where transient failures may occur. The architecture also employs pointers to correct errors in volatile and non-volatile memories.

Abstract: A nonvolatile memory device includes a first storage unit configured to store a plurality of first fault address information provided in a first test operation, a second storage unit configured to store a plurality of second fault address information provided in a second test operation which is performed later than the first test operation; a redundancy operation unit configured to, in performing a redundancy operation, determine the number of operation circuits corresponding to the first fault address information and the number of operation circuits corresponding to the second fault address information among a plurality of redundancy operation circuits based on address number information; and an address providing unit configured to read the plurality of first fault address information and the plurality of second fault address information, and sequentially provide the read information to the redundancy operation unit, wherein the address providing unit is further configured to detect the number of the first f

Abstract: A method begins by tracking age related failure levels of memory devices within the storage unit. The method continues by maintaining a data location table that maps a range of DSN addresses allocated to the storage unit to the memory devices and further records storing of encoded data slices having specific DSN addresses within the memory devices. The method continues, when the age related failure level for a memory device compares unfavorably to a first failure level threshold, by determining to reassign a portion of DSN addresses assigned to the memory device. The method continues by identifying a second memory device having a corresponding age related soft failure level comparing favorable to the first failure level threshold. The method continues by reassigning the portion of the DSN addresses from the memory device to the second memory device and updating the data location table.

Abstract: A system comprising a processor and a memory, wherein said memory comprises instructions that when executed by said processor implement a method. The method includes loading a first portion of a set of redundancy data into a register of the processor for each redundant sector of a plurality of redundant sectors. A second portion of a set of redundancy data is also loaded into the volatile memory for each redundant sector of the plurality of redundant sectors. Loading the second portions of the sets of redundancy data comprises loading a third portion of redundancy data comprising a plurality of second portions of redundancy data for the plurality of redundant sectors.

Abstract: A method for correcting faults in semiconductor memory components provides an application system having a multichip module (1) which has a semiconductor memory component (2) containing a volatile memory and a diverting circuit (7). When the application system is being booted up, addresses of faulty memory cells in the semiconductor memory component (2) are loaded into the multichip module (1), with the result that the diverting circuit (7) diverts access to a memory cell in the replacement data memory if a faulty memory cell in the semiconductor memory component (2) is accessed.

Abstract: Subject matter disclosed herein relates to on-the-fly remapping a memory device by hardware-switching data paths to locations of the memory device.

Abstract: A method of controlling a nonvolatile semiconductor memory includes checking, at a first interval period, an error count of data stored in a first group, the first group including a plurality of blocks/units, and when a first block/unit in the first group satisfies a first condition, assigning the first block/unit to a second group. The method includes checking, at a second interval period, an error count of data stored in the second group, the second interval period being shorter than the first interval period, and when a second block/unit in the second group satisfies a second condition, moving data stored in the second block/unit to an erased block/unit in which stored data is erased among the plurality of blocks/units.

Abstract: Embodiments relate to a method including detecting a first error when reading a first cache line, recording a first address of the first error, detecting a second error when reading a second cache line and recording a second address of the second error. Embodiments also include comparing the first and second bitline address, comparing the first and second wordline address, activating a bitline delete mode based on matching first and second bitline addresses and not matching the first and second wordline addresses, detecting a third error when reading a third cache line, recording a third bitline address of the third error, comparing the second bitline address to a third bitline address and deleting a location corresponding to the third cache line from available cache locations based on the activated bitline delete mode and the third bitline address matching the second bitline address.

Abstract: A recording apparatus includes: a recording unit to record information by laser irradiation on a recording medium having multiple recording layers where information is recorded, with a track formed in the layers as a continuous recording area and data recorded within a track, and also multiple tracks set to one layer according to recording purpose; and a control unit to determine a sparing destination where information is recorded on a recording position specified according to a recording request, and if sparing processing occurs, as a first priority the next recording address of a track being recorded is selected as a sparing destination, and as a second priority the next recording address of a track overlapped with a track where recording is performed according to the recording request in a layering direction of the layers is selected as a sparing destination, and to cause the recording unit to execute sparing recording.

Abstract: Electronic apparatus, systems, and methods of operating and constructing the electronic apparatus and/or systems include an embedded processor disposed in a logic chip to direct, among other functions, self-testing of an electronic device structure in conjunction with a pattern buffer disposed in the logic chip, when the electronic device structure is coupled to the logic chip. Additional apparatus, systems, and methods are disclosed.

Abstract: A memory repair mechanism for the memories clustered across the multiple power domains and can be switched on and off independent of each other, thereby enabling low power operation. Enhancements in the shared Fuse Wrapper Architecture enable sharing of a plurality of parallel links connecting the memory blocks of each power domains to the Shared Fuse Wrapper architecture.

Abstract: A method and apparatus for performing half-column redundancy in a CAM device is disclosed, capable of replacing a defective half-column in the CAM array with only one half of another column. For example, present embodiments can provide twice the redundancy by replacing only one half of a defective CAM cell with one half of a spare cell or of a selected cell. The half-column redundancy disclosed herein provides finer granularity and higher effectiveness to the redundancy scheme as compared to conventional redundancy schemes employed on a CAM array. Thus, the CAM array can be designed and fabricated with a higher yield without having to accommodate for more spare columns than employed by conventional redundancy schemes, allowing for more efficient use of silicon area and a more robust CAM array design.

Abstract: A system includes a first device, a first storage element, a comparator and a second device. The first device is configured to test memory cells in an array of memory cells to detect defective memory cells. The defective memory cells include a first memory cell and a second memory cell. The first storage element is configured to store a first address of the first memory cell. The comparator is configured to compare a second address of the second memory cell to the first address.

Abstract: A component identification system and method, including an identifier associated with a replacement component, a memory to store one or more identifiers for each previously used component corresponding to the replacement component, and a processor to compare the identifier of the replacement component with the one or more stored identifiers of each previously used component. The replacement component is acceptable where the identifier of the replacement component differs from the one or more stored identifiers of each previously used component, and the replacement component is unacceptable where the identifier of the replacement component corresponds to one or more stored identifiers of each previously used component. Prior to accepting the replacement component, one or more predetermined validation operations can be performed on the identifier of the replacement component, with the identifier being formed in a serial number or code type scheme.

Abstract: A method for operating a non-volatile memory is provided. The non-volatile memory includes a plurality of physical blocks having a plurality of data blocks and spare blocks. An index is obtained by comparing an average erase count of selected physical blocks with a first threshold. Each erase count for each physical block is the total number of the erase operations performed thereon. A performance capability status for the memory is determined according to the index. The performance capability status is set to a first status when the average erase count exceeds the first threshold. An indication is generated based on the performance capability status. A limp function is performed in response to the first status for configuring a minimum number of the at least some spare blocks reserved and used for data update operations.

Abstract: Memory systems, systems and methods are described that may include a plurality of stacked memory device dice and a logic die connected to each other by through silicon vias. One such logic die includes an error code generator that generates error checking codes corresponding to write data. The error checking codes are stored in the memory device dice and are subsequently compared to error checking codes generated from data subsequently read from the memory device dice. In the event the codes do not match, an error signal can be generated. The logic die may contain a controller that records the address from which the data was read. The controller or memory access device may redirect accesses to the memory device dice at the recorded addresses. The controller can also examine addresses or data resulting in the error signals being generated to identify faults in the through silicon vias.

Abstract: An approach for interleaving memory repair data compression and fuse programming operations in a single fusebay architecture is described. In one embodiment, the single fusebay architecture includes a multiple of pages that are used with a partitioning and interleaving approach to handling memory repair data compression and fuse programming operations. In particular, for each page in the single fusebay architecture, a memory repair data compression operation is performed on memory repair data followed by a fuse programming operation performed on the compressed memory repair data.