Abstract: A memory device may comprise a port to receive remap information regarding a memory device and may comprise a content-addressable memory (CAM) to store the remap information, wherein the CAM may comprise a nonvolatile, discretely-addressable memory.

Abstract: Subject matter disclosed herein relates to on-the-fly remapping a memory device by hardware-switching data paths to locations of the memory device.

Abstract: With increasing capacity, testing of three-dimensional mask-programmed read-only memory (3D-MPROM) becomes too time-consuming and expensive. Accordingly, the present invention discloses a field-repair system. Most of the 3D-MPROM data are not checked in the factory, but checked and repaired in the field. The field-repair system comprises a playback device with a communicating means. The playback device checks the 3D-MPROM data as they are read out. When bad data are detected, the good data to replace the bad data are fetched from a remote server with the communicating means. The remote server stores at least a copy of the content being read.

Abstract: A control module includes an encoder module, which generates a first code word for multiple drives. A detector module, in response to detecting an error in a first drive subsequent to generation of the first code word, initiates replacement of the first drive with a second drive. The encoder module generates a second code word for the second drive. A mapping module maps physical locations of data in the drives to logical locations of the first code word, assigns a predetermined value to one of the logical locations corresponding to the first drive to identify an unused logical location, and assigns the unused logical location to the second drive based on the predetermined value. A difference module generates a third code word based on the first and second code words. The encoder module generates an updated code word for the multiple drives based on the first and third code words.

Abstract: To decrease the burden of digital processing, provided is an AD conversion apparatus comprising a pattern generating section that, for each target bit specified one bit at a time moving downward in the output data, generates a pattern signal having a pulse width or number of pulses corresponding to a weighting of the target bit; an integrating section that integrates the pattern signals according to a judgment value for judging a value of the target bit each time a pattern signal is generated, and outputs a reference signal obtained by accumulating the integrated value of each pattern signal; a comparing section that, each time generation of a pattern signal is finished, compares the input signal to the reference signal; and an output section that outputs the output data to have values corresponding to the comparison results obtained after each generation of a pattern signal corresponding to a bit is finished.

Abstract: A static RAM redundancy memory for use in combination with a non-volatile memory array, such as ferroelectric RAM (FRAM), in which the power consumption of the SRAM redundancy memory is reduced. Each word of the redundancy memory includes data bit cells for storing addresses of memory cells in the FRAM array to be replaced by redundant elements, and also enable bits indicating whether redundancy is enabled for those addresses. A logical combination of the enable bits in a given word determines whether the data bit cells in that word are powered-up. As a result, the power consumption of the redundancy memory is reduced to the extent that redundancy is not enabled for segments of the FRAM array.

Abstract: An electronic device is provided including an input/output (I/O) interface, a plurality of memory elements, a controller coupled to the I/O interface and the plurality of memory elements. In the device, the controller configured for operating the plurality of memory elements during a normal operating mode of the electronic device, where responsive to receiving a command for replacing a selected memory sector in the electronic device during the normal operating mode, the controller is configured for identifying one or more available spare memory sectors in the electronic device and modifying at least one memory map in the electronic device to replace the selected memory sector with the one of the available spare memory sectors.

Abstract: Adaptive error resilience for streaming video transmission over a network is provided. In one embodiment, a method of transmitting a plurality of packets comprises generating a first proactive repair redundancy information for a first data packet; adding the first proactive repair redundancy information to a second data packet; generating a second proactive repair redundancy information for the first data packet; adding the second proactive repair redundancy information to a repair packet; and transmitting the plurality of packets, wherein the plurality of packets includes the first data packet and at least one of the second data packet and the repair packet.

Abstract: A solid state storage system includes a flash memory region comprising a plurality of memory blocks and a plurality of replacement blocks corresponding to error-occurred blocks when errors occur in the memory blocks; and a memory controller configured to perform a control operation to replace the error-occurred blocks with the replacement blocks, wherein the error-occurred blocks comprise correctable blocks and uncorrectable blocks, and wherein the memory controller determines whether the error-occurred blocks are the correctable blocks or the uncorrectable blocks and controls zones of the replacement blocks, replaced in correspondence to the correctable blocks, to be allocated a plurality of times.

Abstract: A method of screening manufacturing defects at a memory array may include programming a background pattern of physically inverse data along conductive lines extending in a first direction. The programming may include providing a program conductive line with a high value. The method may further include programming a memory cell at an intersection of the program conductive line and a conductive line extending in a second direction to a selected high value, and determining whether a cell initially at a low value and associated with a conductive line extending in the first direction and adjacent to the program conductive line is disturbed.

Abstract: The system and method are for efficient detection and restoration of data storage array defects. The system may include a data storage subsystem, wherein the data storage subsystem includes a data storage array, read-write logic coupled to the data storage array, a parity generator for producing and storing check data during write operations to the data storage array and generating check data during read operations on the data storage array, and a parity checker for verifying the stored check data with generated check data and identifying defective data read-write elements during read operations on the data storage array. The subsystem may further include a Built-in Self Test (BIST) generator operating only on the identified defective data read-write elements for determining defective data storage elements in the defective data read-write elements, and a restoration mechanism for restoring the valid operation of data access elements containing the defective data storage elements in the data storage array.

Abstract: An apparatus includes a processor, a memory, and an error module operable on the processor. The error module is configured to perform a memory scrub of the memory across a scrub cycle of multiple scrub cycles. The error module is configured to identify correctable errors of symbols in the memory that are a result of accesses from a section of the memory in response to the memory scrub. The error module is configured to perform an analysis across the multiple scrub cycles, wherein the analysis comprises a determination whether at least two symbols across the multiple scrub cycles have at least one correctable error. The error module is configured to responsive to a determination that at least two symbols across the multiple scrub cycles have at least one correctable error, execute at least one repair of the memory that includes the section of memory.

Abstract: In some example embodiments, a method includes performing a memory scrub of a memory across a scrub cycle of multiple scrub cycles. The method includes identifying correctable errors of symbols in the memory that are a result of accesses from a section of the memory in response to the memory scrub. The method also includes performing an analysis across the multiple scrub cycles, wherein the performing of the analysis comprises determining whether at least two symbols across the multiple scrub cycles have at least one correctable error. The method includes responsive to determining that at least two symbols across the multiple scrub cycles have at least one correctable error, executing at least one repair of the memory that includes the section of memory.

Abstract: Apparatus, systems, and methods are disclosed, such as those that operate within a memory device to replace one or more selected failing memory cells with one or more repair memory cells and to correct data digits read from other failing memory cells in the memory device using a different method. Additional apparatus, systems, and methods are disclosed.

Abstract: A flash storage device performs wear-leveling by tracking data errors that occur when dynamic data is read from a storage block of the flash storage device and moving the dynamic data to an available storage block of the flash storage device. Additionally, the flash storage device identifies a storage block containing static data and moves the static data to the storage block previously containing the dynamic data.

Abstract: A system for automatic lane failover includes a first device coupled to a second device via a serial communication link having a plurality of a communication lanes. The devices may communicate by operating the link in a normal mode and a degraded mode. During normal mode operation, the devices may send frames of information to each other via the serial communication link. Each frame of information may include a number of data bits and a number of error protection bits. In response to either device detecting a failure of one or more of the communication lanes, the first device may cause the serial communication link to operate in a degraded mode by removing the one or more failed communication lanes. In addition, each device may reformat and send the frame of information on the remaining communication lanes with fewer data bits and the same number of error protection bits.

Abstract: In a memory device, an on-die register is provided that is configured to store a row address as well as a column address of a memory cell that fails a test. Storing the row address frees testing from being limited to activating at one time only rows related to a common redundant segment. Storing the row address also guides repair using segmented redundancy. As an addition or alternative, information may be stored in an anti-fuse bank that is designed to provide access to a redundant cell but has not yet enabled access to that cell. If the information stored in the anti-fuse bank relates to the failure of the redundant cell, such information may be used to avoid repairing with that redundant cell.

Abstract: An apparatus, system, and method are disclosed for bad block remapping. A bad block identifier module identifies one or more data blocks on a solid-state storage element as bad blocks. A log update module writes at least a location of each bad block identified by the bad block identifier module into each of two or more redundant bad block logs. A bad block mapping module accesses at least one bad block log during a start-up operation to create in memory a bad block map. The bad block map includes a mapping between the bad block locations in the bad block log and a corresponding location of a replacement block for each bad block location. Data is stored in each replacement block instead of the corresponding bad block. The bad block mapping module creates the bad block map using one of a replacement block location and a bad block mapping algorithm.

Abstract: A method for operating a non-volatile memory is provided. The non-volatile memory includes a plurality of physical blocks having a plurality of data blocks and spare blocks. An index is obtained by comparing an average erase count of selected physical blocks with a first threshold. Each erase count for each physical block is the total number of the erase operations performed thereon. A performance capability status for the memory is determined according to the index. The performance capability status is set to a first status when the average erase count exceeds the first threshold. An indication is generated based on the performance capability status. A limp function is performed in response to the first status for configuring a minimum number of the at least some spare blocks reserved and used for data update operations.

Abstract: Memory apparatus and methods utilizing multiple bit lanes may redirect one or more signals on the bit lanes. A memory agent may include a redrive circuit having a plurality of bit lanes, a memory device or interface, and a fail-over circuit coupled between the plurality of bit lanes and the memory device or interface.

Abstract: A reproducing apparatus is provided. The reproducing apparatus includes a recording/reading unit that records data on or reads data from a disc including a defect management area in which defect information regarding data recorded in a data area of the disc and defect management information for managing the defect information are repeatedly recorded, and a controller that controls the recording/reading unit to read the defect information and the defect management information from the defect management area, and read data from the disc using the defect information. First defect information, which is repeatedly recorded, includes second defect information which is recorded in a predetermined area and defect information regarding a defective block occurring after the second defect information is recorded. The defect management information includes location information of the defect information.

Abstract: An interface processes memory redundancy data on an application specific integrated circuit (ASIC) with self-repairing random access memory (RAM) devices. The interface includes a state machine, a counter, and an array of registers. The state machine is coupled to a redundancy chain. The redundancy chain includes coupled redundant elements of respective memory elements on the ASIC. In a shift-in mode, the interface shifts data from each of the elements in the redundancy chain and compresses the data in the array of registers. The interface communicates with a test access port coupled to one or more eFuse devices to store and retrieve the compressed data. In a shift-out mode, the interface decompresses the data stored in the array of registers and shifts the decompressed data to each unit in the redundancy chain. The interface functions absent knowledge of the number, bit size and type of self-repairing RAM devices in the redundancy chain.

Abstract: A transmitter communicates with a receiver and an error corrector corrects bit errors generated during data transmission. The transmitter has a scrambler unit that scrambles data so that a running disparity of 0 and 1 in the input data is substantially zero. A bit-string converting unit 15 that adds bit data for ensuring a maximum run length of a serial bit string of the scrambled data and converts control information to bit data of a fixed value. A synchronization timing generating unit 16 divides the transmitted data by a constant interval and converts the transmission data to a data block. A bit-string converting unit extracts a fixed-value bit pattern of the control data from the bit string of the data block, converts the bit pattern to the control information, and discriminates the data and the control information. A descrambler unit reconverts the data-scrambled data to the data before scrambling.

Abstract: A flash storage device tracks performs wear-leveling by tracking data errors that occur when dynamic data is read from a storage block of the flash storage device and moving the dynamic data to an available storage block of the flash storage device. Additionally, the flash storage device identifies a storage block containing static data and moves the static data to the storage block previously containing the dynamic data.

Abstract: An apparatus and method for efficiently processing memory faults. A faulty memory is exchanged with a spare memory when the total number of faults in the memories is over a threshold. After the switching, when the number of faults in a single cache line is over a threshold, a memory page corresponding to the single cache line is blocked.

Abstract: The disclosed embodiments provide a dynamic memory device, comprising a set of dynamic memory cells and a set of replacement dynamic memory cells. The set of replacement dynamic memory cells includes data cells which contain replacement data bits for predetermined faulty cells in the set of dynamic memory cells, and address cells which contain address bits identifying the faulty cells, wherein each data cell is associated with a group of address cells that identify an associated faulty cell in the set of dynamic memory cells. The dynamic memory device also includes a remapping circuit, which remaps a faulty cell in the set of dynamic memory cells to an associated replacement cell in the set of replacement cells.

Abstract: Systems and methods disclosed herein include those that may receive a memory request including a requested memory address and may send the memory request directly to an address decoder associated with a stacked-die memory vault without knowing whether a repair address is required. If a subsequent analysis of the memory request shows that a repair address is required, an in-process decode of the requested memory address can be halted and decoding of the repair address initiated.

Abstract: Dynamically replicated memory is usable to allocate new memory space from failed memory pages by pairing compatible failed memory pages to reuse otherwise unusable failed memory pages. Dynamically replicating memory involves detecting and recording memory faults, reclaiming failed memory pages for later use, recovering from detected memory faults, and scheduling access to replicated memory pages.

Abstract: An apparatus according to the present invention is designed to perform formatting processing on an information storage medium. The storage medium has a data storage area including a user data area and a spare area. The user data area is provided to write user data on, while the spare area includes a replacement block to be used as a replacement for a block that has been detected as a defective block. The replacement block stores instruction information that instructs to read data from the defective block when data is read from the replacement block. The apparatus includes a control section for controlling the formatting processing. In performing the formatting processing, the control section updates information stored in the replacement block such that when data is read from the replacement block, the data is not read from the defective block.

Abstract: An apparatus, system, and method are disclosed for bad block remapping. A bad block identifier module identifies one or more data blocks on a solid-state storage element as bad blocks. A log update module writes at least a location of each bad block identified by the bad block identifier module into each of two or more redundant bad block logs. A bad block mapping module accesses at least one bad block log during a start-up operation to create in memory a bad block map. The bad block map includes a mapping between the bad block locations in the bad block log and a corresponding location of a replacement block for each bad block location. Data is stored in each replacement block instead of the corresponding bad block. The bad block mapping module creates the bad block map using one of a replacement block location and a bad block mapping algorithm.

Abstract: Systems and methods are disclosed herein, including those that operate to monitor a first set of operational parameters associated with a memory vault, to adjust a second set of operational parameters associated with the memory vault, and to perform alerting and reporting operations to a host device.

Abstract: In a memory device, an on-die register is provided that is configured to store a row address as well as a column address of a memory cell that fails a test. Storing the row address frees testing from being limited to activating at one time only rows related to a common redundant segment. Storing the row address also guides repair using segmented redundancy. As an addition or alternative, information may be stored in an anti-fuse bank that is designed to provide access to a redundant cell but has not yet enabled access to that cell. If the information stored in the anti-fuse bank relates to the failure of the redundant cell, such information may be used to avoid repairing with that redundant cell.

Abstract: Data storage control circuitry for controlling storage and retrieval of data in a data store in which data is stored in data blocks. A group data store stores data by grouping together blocks that have at least one faulty bit into groups of at least two blocks. For each group of blocks at least one of the blocks has a non-faulty bit for each of the bit locations in the blocks. A selector data store stores indicators for each group indicating which bits of the blocks within a group are the non-faulty bits. When storing data to a data block within a group, the data is stored in each of the blocks within the group. When retrieving data from a data block within a group, the data is read from respective bits of the blocks within the group as indicated by the indicators.

Abstract: An integrated circuit containing memory includes IEEE 1149.1 (JTAG) controlled self-repair system that permits permanent repair of the memory after the integrated circuit has been packaged. The JTAG controlled self-repair system allows a user to direct circuitry to blow fuses using an externally supplied voltage to electrically couple or isolate components to permanently repair a memory location with JTAG standard TMS and TCK signals. The system may optionally sequentially repair more than one memory location using a repair sequencer.

Abstract: A semiconductor memory device includes a data storage area wherein a plurality of data cells, respectively storing one bit of data, is arranged in a lattice form, a redundant data storage area that stores one bit parity data, the one bit parity data corresponding respectively to a line of data read out of the data storage area as a data group, a first switch section that receives a data group read out from the data storage area and a parity data bit, and a composite unit that receives an output of the first switch section and that generates correction data for the read data group, as based upon defect position information of the data storage area. The first switch section is selectively controlled to provide the parity data bit associated with the read data group as an input into the composite unit based on the defect position information.

Abstract: As a semiconductor storage device that can efficiently perform a refresh operation, provided is a semiconductor storage device comprising a non-volatile semiconductor memory storing data in blocks, the block being a unit of data erasing, and a controlling unit monitoring an error count of data stored in a monitored block selected from the blocks and refreshing data in the monitored block in which the error count is equal to or larger than a threshold value.

Abstract: The presented solid state storage system provides an efficient manner of processing read and write operations in a memory block that has a faulty page of memory within it. The solid state storage system includes a flash memory area and a memory controller. The memory controller stores link information into a buffer, allocates a first temporary physical block to resume operations of the bad block past the first bad page, updates and stores mapping information associated with the remaining portions of the bad block past the first bad page, and merges together those valid pages from among the bad block into a final physical block by merging together all prior successfully operated valid pages from among the bad block with any subsequently successfully operated valid pages which are associated with successful operations subsequently to the failure in the first bad page of the bad block.

Abstract: In one embodiment, a method includes receiving a program stream from a program source on a first channel. The method also includes detecting an unrecoverable error in the program stream, and receiving a standalone decodable repair stream from an error repair source on a second channel. The repair stream refers to a portion of the program stream, where the portion corresponds to the unrecoverable error. The method also includes combining the repair stream and the program stream to produce a presentable stream for user viewing.

Abstract: An apparatus and method for a processor-memory unit for use in system-in-package (SiP) and system-in-package (SiP) integrated circuit devices. The apparatus includes a processing module, a memory module and a programmable system module. The programmable system module is configured to function as an interface between the memory module and the processing module, or as an interface between the memory module and a testing device. The invention facilitates integration and testing of processor-memory units including functional components having different communication protocols.

Abstract: A data processing apparatus includes processing circuitry, a cache storage, and a replicated address storage having a plurality of entries. On detecting a cache record error, a record of a cache location avoid storage is allocated to store a cache record identifier for the accessed cache record. On detection of an entry error, use of the address indication currently stored in that accessed entry of the replicated address storage is prevented, and a command is issued to the cache location avoid storage. In response, a record of the cache location avoid storage is allocated to store the cache record identifier for the cache record of the cache storage associated with the accessed entry of the replicated address storage. Any cache record whose cache record identifier is stored in the cache location avoid storage is logically excluded from the plurality of cache records.

Abstract: A recording method for use by an apparatus and/or which is encoded on a computer readable medium includes selecting a defect management on mode or a defect management off mode that indicates whether defect management is to be performed or not while data is recorded in the recording medium, recording the data in the recording medium while defect management is performed on the recording medium, if the defect management on mode is selected, and recording the data in the recording medium without defect management, if the defect management off mode is selected.

Abstract: System and method for using flash memory in a memory hierarchy. A computer system includes a processor coupled to a memory hierarchy via a memory controller. The memory hierarchy includes a cache memory, a first memory region of random access memory coupled to the memory controller via a first buffer, and an auxiliary memory region of flash memory coupled to the memory controller via a flash controller. The first buffer and the flash controller are coupled to the memory controller via a single interface. The memory controller receives a request to access a particular page in the first memory region. The processor detects a page fault corresponding to the request and in response, invalidates cache lines in the cache memory that correspond to the particular page, flushes the invalid cache lines, and swaps a page from the auxiliary memory region to the first memory region.

Abstract: Electronic apparatus, systems, and methods of operating and constructing the electronic apparatus and/or systems include an embedded processor disposed in a logic chip to direct, among other functions, self-testing of an electronic device structure in conjunction with a pattern buffer disposed in the logic chip, when the electronic device structure is coupled to the logic chip. Additional apparatus, systems, and methods are disclosed.

Abstract: A block management method for managing physical blocks of a rewritable non-volatile memory, and a memory controller and a memory storage apparatus using the same are provided. The method includes grouping the physical blocks into at least a data area, a free area, and a replacement area, and grouping the physical blocks of the data area and the free area into a plurality of physical units. The method also includes when one of the physical blocks belonging to of the physical units of the data area becomes a bad physical block, getting a physical block from the replacement area and replacing the bad physical block with the gotten physical block. The method further includes associating a physical unit that contains no valid data in the free area with the replacement area. Thereby, the physical blocks can be effectively managed and the access efficiency can be improved.

Abstract: To provide a memory system which determines a memory state such as an exhaustion level and allows a memory to be efficiently used. The memory system includes a NAND type flash memory 1 in which data can be electrically written/erased, a nonvolatile memory 2 which counts the number of erase operations of the NAND type flash memory 1 and retains the number of erase operations and a maximum number of erase operations, and a controller 3 which has a connection interface 31 to be given a self-diagnosis command from a computer 4, and retrieves the number of erase operations and the maximum number of erase operations from the nonvolatile memory 2 based on the self-diagnosis command and outputs the number of erase operations and the maximum number of erase operations to the computer 4 through the connection interface 31.

Abstract: A method for operating a memory that includes multiple analog memory cells includes storing data in the memory by writing first storage values to the cells, so as to cause the cells to hold respective electrical charge levels. After storing the data, second storage values are read from at least some of the cells, including at least one interfered cell that belongs to a group of cells. A Back Pattern Dependency (BPD) distortion caused by the electrical charge levels of one or more interfering cells in the group to at least one of the second storage values read from the at least one interfered cell is detected and canceled. The second storage values, including the at least one of the second storage values in which the BPD distortion was canceled, are processed so as to reconstruct the data.

Abstract: A method for storing data in a memory (28) that includes analog memory cells (32) includes identifying one or more defective memory cells in a group of the analog memory cells. An Error Correction Code (ECC) is selected responsively to a characteristic of the identified defective memory cells. The data is encoded using the selected ECC and the encoded data is stored in the group of the analog memory cells. In an alternative method, an identification of one or more defective memory cells among the analog memory cells is generated. Analog values are read from the analog memory cells in which the encoded data were stored, including at least one of the defective memory cells. The analog values are processed using an ECC decoding process responsively to the identification of the at least one of the defective memory cells, so as to reconstruct the data.

Abstract: Herein described is at least a method and system for processing a read or write operation when one or more defects are mapped using one or more fractional sectors. The method comprises using one or more fractional sectors to map defects and to store data symbols. Furthermore, a first algorithm is used for translating a logical block address into a physical starting location such that one or more fractional sectors may be processed during a read or write operation. A second algorithm is used for temporally processing one or more portions of a track of a disk drive, wherein the one or more portions may comprise one or more defective fractional sectors, non-defective fractional sectors, frame remainders, and servo sectors. The system comprises a memory, a processor, and software resident in memory. The process executes the software that implements the first and second algorithms.

Abstract: An access method of a volatile memory accesses the volatile memory via a block access fashion. The volatile memory includes a plurality of blocks. The method includes: performing a reading operation for a block having at least one known bad cell among the blocks, which includes reading a block data and an error correction code data corresponding to the block and applying the ECC data to correct data read from the at least one known bad cell to generate a corrected block data.

Abstract: Memory apparatus and methods utilizing multiple bit lanes may redirect one or more signals on the bit lanes. A memory agent may include a redrive circuit having a plurality of bit lanes, a memory device or interface, and a fail-over circuit coupled between the plurality of bit lanes and the memory device or interface.