Abstract: Semiconductor memory device includes a cell array including a plurality of unit cells; and a test circuit configured to perform a built-in self-stress (BISS) test for detecting a defect by performing a plurality of internal operations including a write operation through an access to the unit cells using a plurality of patterns during a test procedure carried out at a wafer-level.

Abstract: In an example embodiment there is described herein an apparatus, comprising a device having an input and an output, a controllable selecting device having a first input coupled to input of the device and a second input coupled to the output of the device, and a selection control circuit having a test input for receiving a test signal and a power mode input for receiving a power mode signal. The selection control circuit is coupled to the controllable selecting device and operable to control which input the controllable selecting device selects. The selection control circuit is configured to select the first input to isolate the device responsive to the test signal indicating no testing is being performed the power mode signal indicating a low power mode.

Abstract: To provide a memory system which determines a memory state such as an exhaustion level and allows a memory to be efficiently used. The memory system includes a NAND type flash memory 1 in which data can be electrically written/erased, a nonvolatile memory 2 which counts the number of erase operations of the NAND type flash memory 1 and retains the number of erase operations and a maximum number of erase operations, and a controller 3 which has a connection interface 31 to be given a self-diagnosis command from a computer 4, and retrieves the number of erase operations and the maximum number of erase operations from the nonvolatile memory 2 based on the self-diagnosis command and outputs the number of erase operations and the maximum number of erase operations to the computer 4 through the connection interface 31.

Abstract: As a semiconductor storage device that can efficiently perform a refresh operation, provided is a semiconductor storage device comprising a non-volatile semiconductor memory storing data in blocks, the block being a unit of data erasing, and a controlling unit monitoring an error count of data stored in a monitored block selected from the blocks and refreshing data in the monitored block in which the error count is equal to or larger than a threshold value.

Abstract: Marking memory chips as faulty when a fault is detected in data from the memory chip. Upon detecting that a plurality of memory chips are faulty, determining which of a plurality of memory channels contains the faulty memory chips. Marking one of a plurality of memory channels as failing in response to determining that the number of failing memory chips has exceeded a threshold.

Abstract: Disclosed is a semiconductor chip with a digital integrated circuit, such as a memory device (e.g., static random access memory (SRAM) arrays, dynamic random access memory (DRAM) arrays, content addressable memory (CAM) arrays, etc), that can be selectively operated in either a functional mode or in a performance screening mode. In the functional mode, a first signal supplied by an external signal generator is used to activate a first device in the circuit and, in response, a second device in the circuit outputs a data output signal. In the performance screening mode, a second signal is internally generated by an internal signal generator based on the data output signal. This second signal is then used to activate the first device in the circuit and, in response, the second device outputs the data output signal.

Abstract: A semiconductor device including an electronic circuit, a memory, and an error detecting module. The electronic circuit is configured to receive an input signal having been generated by a test module, and generate an output signal based on the input signal. The memory is configured to store a predetermined output value that is expected to be output from the electronic circuit based on the electronic receiving the input signal, wherein the predetermined output value is stored in the memory prior to the input signal being generated by the test module. The error detecting module is configured to (i) generate a sample value of the output signal, (ii) compare the sample value of the output signal to the predetermined output value stored in the memory, and (iii) generate a result signal that indicates whether the sample value of the output signal matches the predetermined output value.

Abstract: Various new and non-obvious apparatus and methods for testing embedded memories in an integrated circuit are disclosed. One of the disclosed embodiments is an apparatus for testing an embedded memory in an integrated circuit. This exemplary embodiment comprises input logic that includes one or more memory-input paths coupled to respective memory inputs of the embedded memory, a memory built-in self-test (MBIST) controller, and at least one scan cell coupled between the input logic and the MBIST controller. The scan cell of this embodiment is selectively operable in a memory-test mode and a system mode. In memory-test mode, the scan cell can apply memory-test data to the memory inputs along the memory-input paths of the integrated circuit. Any of the disclosed apparatus can be designed, simulated, and/or verified (and any of the disclosed methods can be performed) in a computer-executed application, such as an electronic-design-automation (“EDA”) software tool.

Abstract: A diagnostic extender card is plugged into a memory module socket on a personal computer (PC) motherboard. The extender card has a test socket that receives a memory module and an intercepting decoder chip that receives the chip-select (CS) from the motherboard that selects the memory module for access. When CS is activated, the intercepting decoder chip illuminates a visual indicator on the extender card, allowing a user to locate a memory module being accessed. The exact translation or mapping from logical addresses of test programs to physical addresses of the memory modules is not needed, since the visual indicator shows which memory module is really being accessed, regardless of proprietary address mapping by north bridge chips. Operating system memory accesses are filtered out by a counter that counts accesses during a period set by a timer. When the number of accesses exceeds a threshold, the visual indicator is lit.

Abstract: An error correction code system for a memory is provided. The memory is provided with a parity array that is directly accessible. An embodiment of the error correction code system includes writing and reading test data directly to the parity array. The data read from the parity array is compared with the test data written to the parity array to detect errors.

Abstract: Testing system capable of detecting different kinds of memory faults of a memory under I/O compression includes a data pattern selection circuit, writing pattern selection units, reading pattern selection units, and a data comparison circuit. The data pattern selection circuit converts a testing data into different data patterns by the writing pattern selection units and accordingly writes to the corresponding memory data ends in order to allow the corresponding memory cells to store the data with the corresponding data pattern. The data comparison circuit executes reverse-converting through the reading pattern selection units for comparing if the data stored in the memory cells corresponding to each memory data end are matched and accordingly determines if a failure memory cell exists in the memory.

Abstract: A generalized hardware architecture that supports built-in self testing (BIST) for a range of different computer memory configurations and a generalized BIST algorithm can be compiled, based on specified configuration characteristics (e.g., the number of write ports, the number of read ports, the number of entries, and the number of bits per entry in the computer memory), to generate the hardware design for a particular computer memory system. In one embodiment, the generalized hardware architecture includes a multiplexer block that enables a single BIST comparator to be multiplexed for use in performing BIST testing via different read ports of the computer memory.

Abstract: A semiconductor integrated circuit device related to an embodiment of the present invention includes an address register which includes an internal selection circuit connected with a control circuit, a signal generation instruction circuit which instructs the control circuit so that a predetermined internal control signal is generated, a latch circuit, a plurality of which are arranged corresponding to a number of bits of test parameter data, the latch circuit latching test result data which is provided from the data program/read circuit and outputting the test result data to the selection circuit and externally, the control circuit generating an internal control signal which activates the selection circuit at a timing at which a fixed value data of the test parameter data is changed, and the selection circuit controlling a test so that a fixed value data of the test parameter data is changed.

Abstract: An apparatus and method for a processor-memory unit for use in system-in-package (SiP) and system-in-package (SiP) integrated circuit devices. The apparatus includes a processing module, a memory module and a programmable system module. The programmable system module is configured to function as an interface between the memory module and the processing module, or as an interface between the memory module and a testing device. The invention facilitates integration and testing of processor-memory units including functional components having different communication protocols.

Abstract: A method and apparatus are described for performing a memory built-in self-test (MBIST) on a plurality of memory element arrays. Control packets are output over a first ring bus to respective ones of the arrays. Each of the arrays receives its respective control packet via the first ring bus, and reads commands residing in a plurality of fields within the respective control packet. Each of the arrays performs at least one self-test based on the commands, and outputs a respective result packet over a second ring bus. Each result packet indicates the results of the self-test performed on the array. Each control packet is transmitted in its own individual time slot to a respective one of the arrays.

Abstract: A semiconductor memory device includes a memory cell array, a mode setting circuit, a parity data generation unit, and a data error detection and correction unit. The memory cell array has a plurality of first memory banks for storing normal data, and a predetermined number of second memory banks less than the number of the first memory banks for storing parity data according to control of a first flag signal. The mode setting circuit sets the first flag signal and a second flag signal controlling based on whether a separate memory bank is used to store the parity data in the second memory banks. The parity data generation unit receives normal write data during a write operation, generates parity data with respect to the normal write data in response to the second flag signal, and outputs the normal data and the parity data.

Abstract: A data processing apparatus includes processing circuitry, a cache storage, and a replicated address storage having a plurality of entries. On detecting a cache record error, a record of a cache location avoid storage is allocated to store a cache record identifier for the accessed cache record. On detection of an entry error, use of the address indication currently stored in that accessed entry of the replicated address storage is prevented, and a command is issued to the cache location avoid storage. In response, a record of the cache location avoid storage is allocated to store the cache record identifier for the cache record of the cache storage associated with the accessed entry of the replicated address storage. Any cache record whose cache record identifier is stored in the cache location avoid storage is logically excluded from the plurality of cache records.

Abstract: A dynamic column redundancy replacement system for programming and reading a non-volatile memory system includes an input data replacement logic block and an output data replacement logic block. A column redundancy match logic block compares a user address to latched fuse addresses of bad columns and identifies address matches to facilitate the replacement of bits from defective memory cells with replacement redundancy bits.

Abstract: A memory system includes a selector module that selects and switches between one of N sequences of signal levels for pilot data. The N sequences are different, and N is an integer greater than 1. A multiplexer module selectively combines data and the pilot data and outputs a combined signal. A write module writes to memory based on the combined signal.

Abstract: A device for repair analysis includes a selection unit and an analysis unit. The selection unit is configured to select a part of the row addresses of a plurality of spare pivot fault cells and a part of the column addresses of the spare pivot fault cells in response to a control code. The analysis unit is configured to generate an analysis signal indicating whether row addresses of a plurality of non-spare pivot fault cells are included in selected row addresses and column addresses of the non-spare pivot fault cells are included in selected column addresses.

Abstract: When an update disable signal is at an inactivation level, a latch signal is activated in accordance with an active signal and a mode register set signal. When the update disable signal is at an activation level, the latch signal is activated in accordance with the active signal while being not activated in accordance with the mode register set signal. Based on the latch signal, the address signal is latched. Based on the latched address signal, an internal test signal is generated. With this structure, a target chip can be selectively controlled simply by activating the update disable signal in the target chip.

Abstract: A system includes a processor with a memory map specifying a user mode region with virtual address translation by a memory management unit and a kernel mode region with direct virtual address translation. The processor executes an application in the user mode region where virtual addresses are not unique. A probe receives trace information from the processor. A host system receives the trace information from the probe. The host system includes a data structure associating a process name, a process identification and a set of instruction counters. Each instruction counter is incremented upon the processing of a designated virtual address within the trace information. A profiling module processes information associated with the process name and set of instruction counters to identify a performance problem in the application.

Abstract: To provide a method and the like for testing a main memory in a multi processor system, which is capable of reducing a test execution time and accordingly a start-up time as compared with the case where a single processor is used for the test. The present invention provides a method for testing a main memory (MM) in a multi processor system (MPS) including a main processor (MP) and multiple sub processors (SP) each having a DMA transfer mechanism and a local store (LS).

Abstract: A SRAM (Static Random Access Memory) macro test flop circuit includes a flip-flop circuit, a scan control circuit, and an output buffer circuit. The flip-flop circuit includes a master latch circuit and a slave latch circuit. The master latch circuit includes a master feed-back circuit including a master storage node and a master feed-forward circuit. The slave latch circuit includes a slave feed-back circuit including a slave storage node and a slave feed-forward circuit driven from the master latch. The scan control circuit includes a scan slave feed-forward circuit, a scan latch circuit, and a scan driver circuit driven by the scan feed-back circuit. The scan latch circuit includes a scan feed-back circuit comprising a scan storage node and a scan feed-forward circuit driven from the slave latch. The output buffer circuit includes a master driver driven from master latch circuit and a slave driver driven from slave latch circuit.

Abstract: A method detects a memory error of a computing device using a baseboard management controller (BMC) of the computing device. The BMC includes a microprocessor and a storage system. The method reads data of a state register of a processor of the computing device when the microprocessor receives an interrupt signal generated by the processor due to an internal error of the processor. Then the method determines whether the internal error is a multiple-bit error of a memory of the computing device according to the read data. Upon the condition that the internal error is the multiple-bit error, the method records error information of the multiple-bit error in the storage system.

Abstract: A memory card includes a memory cell, a connector, a controller, and firmware. The memory cell can switch between a plurality of states. The connector can be connected to an external device and exchange signals including commands and data with the external device. The controller exchanges signals with the connector, analyzes a received signal, and accesses the memory cell to record, retrieve or modify data based on the analysis result. The firmware is located within the controller, controls the operation of the controller, and can be set to a test mode or a user mode. When the firmware receives a test command from the external device and the firmware is set to the test mode, the firmware performs a defect test on the memory cell and transmits the result of the defect test to the external device through the connector.

Abstract: A method for error detection includes storing in an associative memory (24, 50, 70) multiple data entries (30), each data entry including a data item (28) together with one or more check symbols (40) computed with respect to the data item. A predetermined sequence of search keys (32) is applied to the memory, thereby causing the memory to generate, in parallel, match results with respect to the data entries. The match results are processed in order to identify an error in at least one of the data entries.

Abstract: A computer system comprising a processor, a memory, and a memory controller coupled to the processor and the memory is provided. The memory controller comprises a first cache and a cache control. The cache control is configured to cause a portion of the memory to be copied into the first cache. The cache control is configured to cause first information to be provided from the first cache to the processor in response to receiving a read transaction from the processor that includes an address in the portion of memory during testing of the portion.

Abstract: Electronic apparatus, systems, and methods of operating and constructing the electronic apparatus and/or systems include an embedded processor disposed in a logic chip to direct, among other functions, self-testing of an electronic device structure in conjunction with a pattern buffer disposed in the logic chip, when the electronic device structure is coupled to the logic chip. Additional apparatus, systems, and methods are disclosed.

Abstract: A one-hot data generating unit generates one-hot data for the maximum data bit width in which a state of one bit is exclusively inverted with respect to states of other bits while sequentially shifting a bit position to be inverted, and writes the one-hot data in an area of a memory designated by an address. A short defect between wirings connected to the memory is detected by comparing the one-hot data written in the memory with the one-hot data before being written.

Abstract: An error detection control system for a nonvolatile memory comprises: a nonvolatile memory having data areas for a plurality of addresses each including a main data area and a redundant data area for one address; memory control means for controlling on the nonvolatile memory a batch erasing process on a data area group basis, a reading process on the data area basis, a programming process on the data area basis, and an overwriting process on a bit basis; error detecting means for executing the error detecting process based upon the corresponding redundant data; error detecting control means for controlling availability of execution of the error detecting process based upon data types to be classified depending on whether or not the data is subjected to the overwriting process or a storage state indicating whether or not the overwriting process has been executed.

Abstract: Aspects of the invention may be found in a method and system for testing an integrated circuit and may comprise an address selector, data selector and staging register coupled to a signal generator. The address selector may comprise a direct access memory test (DAMT) mode address control input and one or more output address pins coupled to an embedded memory device under test (DUT). The data selector may be coupled to at least one data pin and control pin of the signal generator and may comprise a DAMT mode data control input and at least one data output coupled to embedded memory DUT. A staging register comprising a first output clock rate which is one-quarter (¼) its input clock rate and matches a DUT burst write frequency may be coupled to an input of the data selector. A DAMT mode control may configure the memory DUT for DAMT operation.

Abstract: Various embodiments of a memory system are disclosed. In one exemplary embodiment, the memory system may include a semiconductor memory apparatus configured to generate error check signals in a column direction and a row direction of data groups to be transmitted through a plurality of data input/output terminals in a read operation and output the error check signals together with the data groups, and a memory controller configured to control data read/write operations of the semiconductor memory apparatus, generate error check signals by performing error check in a column direction and a row direction of data groups to be transmitted in a write operation, and provide the error check signals to the semiconductor memory apparatus together with the data groups.

Abstract: Various embodiments include methods, apparatus, and systems to scan at least a portion of a memory device for potential errors when a condition for scanning is met. The condition may be dependent on one or more of a number of read operations, a number of write operations, time, and others. Other embodiments including additional methods, apparatus, and systems are disclosed.

Abstract: Techniques are taught for reducing writes, and estimating and displaying estimated remaining lifetime of non-volatile memories. The write reducing is optionally via determining a difference between write operation results and data stored in the non-volatile memories. The estimated remaining lifetime is optionally based at least in part on a previous lifetime. The displaying is optionally via a gauge.

Abstract: A storage device testing system (100) includes at least one 310 robotic arm (200) defining a first axis (205) substantially normal to a 300 floor surface (10). The robotic arm is operable to rotate through a predetermined arc about and extend radially from the first axis. Multiple racks (300) are arranged around the robotic arm for servicing by the robotic arm. Each rack houses multiple test slots (310) that are each configured to receive a storage device transporter (550) configured to carry a storage device (500) for testing.

Abstract: A method, system, and computer-usable medium for implementing a programmable DMA master with data checking utilizing a drone system controller. According to an embodiment of the present invention, a drone processor generates a collection of random data and stores a first and second copy of the collection of random data in a first and second memory location in a drone memory. The drone processor writes a third copy of the collection of random data in a processor memory. When the drone processor retrieves the third copy from the processor memory, the drone processor writes the third copy in the second memory location in the drone memory. When the drone processor compares the first copy with the third copy, the results of the compare is written in a status location within the drone processor.

Abstract: A description is given of a circuit for creating an error coding data block for a first data block, including a first error coding path adapted to create the error coding data block in accordance with a first error coding; and a second error coding path adapted to create the error coding data block in accordance with a second error coding; the error coding data block for the first data block being created optionally by the first or second error coding paths, as a function of a control indicator, and at least the first error coding path comprising a data arrangement alteration device.

Abstract: To provide a memory system which determines a memory state such as an exhaustion level and allows a memory to be efficiently used. The memory system includes a NAND type flash memory 1 in which data can be electrically written/erased, a nonvolatile memory 2 which counts the number of erase operations of the NAND type flash memory 1 and retains the number of erase operations and a maximum number of erase operations, and a controller 3 which has a connection interface 31 to be given a self-diagnosis command from a computer 4, and retrieves the number of erase operations and the maximum number of erase operations from the nonvolatile memory 2 based on the self-diagnosis command and outputs the number of erase operations and the maximum number of erase operations to the computer 4 through the connection interface 31.

Abstract: A memory collar including a first circuit and a second circuit. The first circuit may be configured to generate one or more data sequences in response to one or more test commands. The one or more data sequences may be presented to a memory during a test mode. The second circuit may be configured to pre-process one or more outputs generated by the memory in response to the one or more data sequences.

Abstract: An apparatus and method are disclosed to configure, format, and test, a data storage subsystem product. The method supplies a data storage subsystem product comprising one or more host computer ports, a processor, one or more data storage device ports, and one or more data storage devices interconnected to the one or more data storage device ports. The method further supplies a configuration appliance comprising a storage configuration. The method connects the configuration appliance to one of the one or more storage device ports, boots up the data storage subsystem product, discovers the configuration appliance by the data storage subsystem product, imports storage configuration data into the data storage subsystem product, formats the one or more data storage device, and tests the input and output data transfer rates for the data storage subsystem product, wherein the formatting and testing are initiated concurrently.

Abstract: A method for storing data in a memory (28) that includes analog memory cells (32) includes identifying one or more defective memory cells in a group of the analog memory cells. An Error Correction Code (ECC) is selected responsively to a characteristic of the identified defective memory cells. The data is encoded using the selected ECC and the encoded data is stored in the group of the analog memory cells. In an alternative method, an identification of one or more defective memory cells among the analog memory cells is generated. Analog values are read from the analog memory cells in which the encoded data were stored, including at least one of the defective memory cells. The analog values are processed using an ECC decoding process responsively to the identification of the at least one of the defective memory cells, so as to reconstruct the data.

Abstract: A latch circuit includes a first latch that stores data provided from a data input terminal when a clock is provided from a clock input terminal, and stores scan data provided from a scan data input terminal when a first scan clock is provided from a first scan clock input terminal, a logical circuit that performs a logical operation for a second scan clock provided from the second scan clock input terminal and for an operational mode signal provided from the operation mode input terminal, and generates an update clock and a second latch including an update input terminal connected to an output terminal of the first latch, and an update clock input terminal connected to an output terminal of the logical circuit, the second latch holds the data or the scan data provided from the update input terminal when the update clock is provided.

Abstract: A semiconductor memory apparatus according to the embodiment includes a test mode controller, a first data alignment unit, a decoder, a test executing unit and a second data alignment unit. The test mode controller is configured to generate test enable signals in response to a test mode setting signal and a read command. The first data alignment unit is configured to parallely align first input data that are input in series, generate first alignment data, and transmit it to the first data driver. The decoder is configured to decode the first alignment data in response to the test enable signal and generate the decoding signal. The test executing unit is configured to execute the preset test mode in response to the decoding signal. The second data alignment unit is configured to parallely align second input data, which are input in series, in response to the test enable signal, generate second alignment data, and transmit it to a second data driver.

Abstract: According to the embodiments, a first write enable signal that changes with a constant period and a second write enable signal that changes at a time portion in which a limit time between activation/deactivation control of word lines and activation/deactivation control of bit lines is checked are input, a plurality of core control signals in which a time interval with which the core control signals change is locally shorter than a period of the first write enable signal based on the first write enable signal and the second write enable signal that are input is generated, and an operation verification of the resistive random access memory is performed by using the generated core control signals, whereby a cycle time in an arbitrary test cycle is locally and arbitrary adjusted.

Abstract: A memory system, which is connected to a host device, includes a memory, a host interface which receives a command and an address, which are output from the host device, and a controller which operates in one of a first mode in which the controller converts the address which is received by the host interface and accesses the memory by using the converted address, and a second mode in which the host device directly accesses the memory by using the address which is received by the host interface, the controller controlling switching between the first mode and second mode in accordance with the command.

Abstract: Data storage control circuitry for controlling storage and retrieval of data in a data store in which data is stored in data blocks. A group data store stores data by grouping together blocks that have at least one faulty bit into groups of at least two blocks. For each group of blocks at least one of the blocks has a non-faulty bit for each of the bit locations in the blocks. A selector data store stores indicators for each group indicating which bits of the blocks within a group are the non-faulty bits. When storing data to a data block within a group, the data is stored in each of the blocks within the group. When retrieving data from a data block within a group, the data is read from respective bits of the blocks within the group as indicated by the indicators.

Abstract: An integrated circuit and method for testing memory on the integrated circuit are provided. The integrated circuit has processing logic for performing data processing operations on data, and a plurality of memory units for storing data for access by the processing logic. Further, memory test logic is provided to perform a sequence of tests in order to seek to detect memory defects in the memory units. The memory test logic comprises a plurality of test wrapper units, each test wrapper unit associated with one of the memory units and being operable to execute tests on the associated memory unit, and a test controller for controlling performance of the sequence of tests by communicating with each of the test wrapper units to provide test data defining each test to be executed by that test wrapper unit.

Abstract: A test system includes a computer and an interface device for accessing a scan chain on an application specific integrated circuit (ASIC) under test. The computer includes a memory that contains application software that when executed by the computer quantifies soft errors and soft error rates (SER) in storage elements on the ASIC. The interface device receives commands and data from the computer, translates the commands and data from a first protocol to a second protocol and communicates the commands and data in the second protocol to the ASIC. A method for measuring SER in the ASIC includes baseline, comparison, and latch up accesses of data in a scan chain in the ASIC. Between accesses, the ASIC is exposed to a neutron flux that accelerates the occurrence of soft errors due to ionizing radiation upon the ASIC.

Abstract: The present invention relates to the architecture and operation of computer hardware memory logic, and in particular to a method and respective system for verifying hardware memory logic, wherein an Error Correction Code (ECC) is used for correcting single-bit or multi-bit errors when the ECC-bits cannot be accessed directly for a read or write process. The system and process employs the selection of data patterns that produce check bits that are all ones to ferret out errors in the ECC circuitry.