Abstract: Disclosed is a system that comprises a memory device and a processing device, operatively coupled with the memory device, to perform operations that include, determining that a value of a write counter associated with the memory device satisfies a first threshold criterion. The operations performed by the processing device further include, responsive to determining that the value of the write counter satisfies the first threshold criterion, identifying a first memory unit and a second memory unit of the memory device, the second memory unit comprising one or more memory cells adjacent to one or more memory cells of the first memory unit. The operations performed by the processing device further include performing a read operation on the second memory unit to determine a set of failed bit count statistics corresponding to a plurality of codewords of the second memory unit.

Abstract: In some embodiments, a method for die-level monitoring is provided. The method includes distributing user data throughout a plurality of storage nodes through erasure coding, wherein the plurality of storage nodes are housed within a chassis that couples the storage nodes. Each of the storage nodes has a non-volatile solid-state storage with non-volatile memory and the user data is accessible via the erasure coding from a remainder of the storage nodes in event of two of the storage nodes being unreachable. The method includes producing diagnostic information that diagnoses the non-volatile memory on a basis of per package, per die, per plane, per block, or per page, the producing performed by each of the plurality of storage nodes. The method includes writing the diagnostic information to a memory in the storage cluster.

Abstract: A method for testing a circuit includes performing, by a test engine, a test of bit write to a memory. The test includes defining a bit group based on a set of bits from an address of a memory location. The test further includes generating a bit mask for the bit group. The test further includes performing a bit write operation to the address to store a sequence of bits, the sequence of bits selected using a predetermined bit pattern. The test further includes reading content of the address. The test also includes comparing, using the bit mask, only bits corresponding to the bit group from the sequence of bits and from the content of the address.

Abstract: A diagnosis circuit makes a diagnosis of a first multiplexer. The first multiplexer receives input data elements, selects one of the input data elements, and outputs the selected one as a selected data element. The diagnosis circuit includes a comparator unit and a second multiplexer. The comparator unit compares each of the input data elements to be supplied to the first multiplexer with the selected data element provided by the first multiplexer. The second multiplexer receives comparative data elements corresponding one to one to results of comparison made by the comparator unit with respect to the input data elements and outputs, out of the comparative data elements, a comparative data element, including a result of comparison between the one input data element selected by the first multiplexer and the selected data element, as a result data element.

Abstract: The method for monitoring a wireless link of a wireless node of a CPE device during operation of the CPE device, comprises the steps of taking samples of one or several of the following parameters in a defined time interval: Received Signal Strength (RSSI), modulation rate (Physical Layer Rate) and/or the number of spatial streams used for the wireless link, and calculating an average for that parameters by including a filtering of said parameters.

Abstract: An SRAM includes multiple memory cells, each memory cell includes a data storage unit; a data I/O control adapted to input data to, and output data from, a data line (BL); and multiple access controls respectively connected to at least two access control lines (WL's) and adapted to enable and disable the data input and output from the at least two WL's (WX and WY). The access controls are configured to permit data input only when both WL's are in their respective states that permit data input. A method of writing to a group of SRAM cells include sending a first write-enable signal to the cells via a first WL, sending a group of respective second write-enable signals to the respective cells, and, for each of the cells, preventing writing data to the cell if either of the first write-enable signal and respective second write enable signal is in a disable-state.

Abstract: An arithmetic device includes an auto-command/address generation circuit, a first data storage circuit, and a second data storage circuit. The auto-command/address generation circuit generates an auto-load selection signal that activates an auto-load operation based on a level of a power source voltage. In addition, the auto-command/address generation circuit generates an auto-load command for the auto-load operation. The first data storage circuit outputs look-up table data, to which an activation function is applied, based on the auto-load command. The second data storage circuit stores the look-up table data, output from the first data storage circuit, based on the auto-load command.

Abstract: A semiconductor memory device includes a memory cell array, an error correction circuit, an error log register and a control logic circuit. The memory cell array includes a plurality of memory bank arrays and each of the memory bank arrays includes a plurality of pages. The control logic circuit is configured to control the error correction circuit to perform an ECC decoding sequentially on some of the pages designated at least one access address for detecting at least one bit error, in response to a first command received from a memory controller. The control logic circuit performs an error logging operation to write page error information into the error log register and the page error information includes a number of error occurrence on each of the some pages determined from the detecting.

Abstract: A verifying method for an error checking and correcting (ECC) circuit of a static random-access memory (SRAM) is provided. The SRAM comprises a storage unit, an ECC circuit and a checking circuit. The ECC circuit receives an original data and an output first data. The checking circuit obtains a second data according to an error-injecting mask. The checking circuit performs a bit operation on the first data and the second data to obtain a third data. The checking circuit writes the third data into a test target area of the storage unit and the written data as a fourth data. The checking circuit reads the fourth data from the test target area. The ECC circuit obtains a fifth data and an error message according to the fourth data. The checking circuit obtains the bit error detection result according to the error message and the second data.

Abstract: The disclosure relates to an initialization circuit for initializing memory cells of a memory array including a common bit line. Individual memory cells are coupled to the common bit line of the memory array via at least one pass element of the individual memory cells. The initialization circuit is operable for receiving a set of partition addresses specifying the partitions, i.e. the memory cells to be initialized. The initialization circuit is operable for successively initializing one cell of the partitions to be initialized and iteratively initializing the remaining memory cells of the partitions to be initialized. A number of memory cells initialized simultaneously in one iteration increases from one iteration to another iteration. Initializing a certain memory cell comprises activating the pass element of the cell so that the memory cell is connected to the bit line. Further aspects relate to methods for initializing memory cells and semiconductor circuits.

Abstract: A method includes writing, to a first sub-set of memory blocks of a first plane associated with a memory device, first data corresponding to recovery of an uncorrectable error and writing, to a first sub-set of memory blocks of a second memory plane associated with the memory device, second data corresponding to recovery of the uncorrectable error. A relative physical location of the first sub-set of memory blocks of the first memory plane and a relative physical location of the first sub-set of memory blocks of the second memory plane are a same relative physical location with respect to the first memory plane and the second memory plane.

Abstract: A semiconductor memory device includes a memory cell array, an error correction code (ECC) circuit and a control logic circuit to control the ECC circuit. The memory cell array includes memory cells and a normal cell region and a parity cell region The ECC circuit, in a normal mode, receives a main data, performs an ECC encoding on the main data to generate a parity data and stores the main data and the parity data in the normal cell region and the parity cell region. The ECC circuit, in a test mode, receives a test data including at least one error bit, stores the test data in one of the normal cell region and the parity cell region and performs an ECC decoding on the test data and one of the main data and the parity data to provide a decoding result data to an external device.

Abstract: A position-measuring device includes a graduation carrier having a measuring graduation, position measurement electronics, a data memory and a power supply. The data memory includes a first memory which is a volatile memory for storing additional data, a second memory which is a writable non-volatile memory, and a memory controller for controlling transfer and storage of additional data from the first into the second memory. The power supply includes an input stage, a first output stage for the position measurement electronics, a second output stage for the data memory, and a voltage monitor which will turn off the first output stage of the power supply in response to a drop below a minimum value and signal the drop to the memory controller by a backup signal. In response to the backup signal, the memory controller will transfer additional data from the first memory into the second memory.

Abstract: Methods, systems, and devices for recovery of logical-to-physical (L2P) table information for a memory device are described. A memory system may detect an error in one or more pointers of the L2P table using an error detecting code that is uncorrectable using the code. The memory system may determine a set of candidate codewords for the set of bits, where each of the candidate codewords includes one or more corresponding candidate pointers, and check whether a candidate codeword is correct based on whether a logical address corresponding to a candidate pointer of the candidate codeword matches a logical address stored as metadata for a set of data at a physical address pointed to by the candidate pointer. The memory system may limit the set of candidate codewords or order the candidate codewords for evaluate to reduce a latency associated with identifying a correct candidate codeword.

Abstract: A system and method for optimizing seasoning trim values based on form factors in memory sub-system manufacturing. An example method includes selecting a baseline set of trim values based on a set of memory sub-system form factors; generating a first modified set of trim values by modifying a first trim value of the baseline trim values; instructing each memory sub-system to perform seasoning operations using the first modified set of trim values; responsive to determining that each memory sub-system passed failure scanning operations, generating a second modified set of trim values; instructing each memory sub-system to perform seasoning operations using the second modified set; responsive to determining that a memory sub-system failed the failure scanning operations, determining whether the failed memory sub-system is defective; and responsive to determining that the failed memory sub-system does is not defective, storing the first modified trim values for the set of form factors.

Abstract: Systems and methods are disclosed including a memory device and a processing device operatively coupled to the memory device. The processing device can perform operations including determining a voltage distribution metric associated with a at least part of a block of the memory device; determining a threshold value for the voltage distribution metric associated with the block; and responsive to determining that the voltage distribution metric exceeds the threshold value, performing a media management operation with respect to the block.

Abstract: A write circuit for writing to a plurality of memory cells of a non-volatile data memory, including a buffer memory forming a single memory element which is configured to buffer a first data value before storing said value in the plurality of non-volatile memory cells of the non-volatile data memory. The write circuit also includes a first write line, by means of which the buffer memory is connected to a first memory cell of the plurality of memory cells, and a second write line, which is different from the first write line and by means of which the buffer memory is connected to a second memory cell of the plurality of memory cells.

Abstract: A memory device, and a method of operating the same, includes a plurality of pages, a peripheral circuit, and control logic. The peripheral circuit is configured to receive a command, an address, and data from an external controller to program a page selected from among the plurality of pages, and to generate internal input data depending on an input mode for the command, the address, and the data. The control logic is configured to determine whether internal input data is to be generated based on the data depending on the input mode and to control the peripheral circuit so that a program operation of programming the internal input data is performed.

Abstract: Generally, a computing system includes processing circuitry, such as one or more processors or other suitable components, and memory devices, such as chips or integrated circuits. The memory devices may be associated with thermal limits. Saving data in such a way that causes a thermal limit of the memory device to be exceeded may cause loss of stored data and/or device over-heating. As discussed herein, a memory controller associated with the processing circuitry may determine whether a thermal limit is expected to be exceeded for a current memory writing operation. When the thermal limit is expected to be exceeded, the memory controller may respond by modifying the memory operation in such a manner that the thermal limit is not exceeded, thereby improving operation of at least the memory device and/or memory controller.

Abstract: The present disclosure provides a method, a device and a terminal for testing a memory chip. The method may include setting an attack mode and random attack parameters, generating a random attack command according to the attack mode and random attack parameters, attacking the memory chip according to the random attack command, and testing the attacked memory chip and generating a test result. This method is able to simulate various types of attacks and can thus perform a suitable test on the memory chip for the types of the actual attack. In addition, since the attacks can be randomized to any memory cell of the memory chip, testing of the whole memory chip is made possible.

Abstract: A load of a data channel at the time of data writing is reduced. A memory controller includes a specific data pattern retaining unit, a comparator, and an issuance unit. The specific data pattern retaining unit retains a specific data pattern. The comparator compares write data regarding a write command from a host computer with the specific data pattern. The issuance unit issues a specific write request that requests writing of the specific data pattern without supplying the write data to a memory in a case where the write data matches the specific data pattern.

Abstract: A memory system includes a memory device including a memory device including a plurality of blocks, each block having a plurality of pages to store data; and a controller suitable for selecting specific memory blocks among the plurality memory blocks, acquiring error bit information of the plurality of pages in each of the specific memory blocks, generating a memory block group management list of each of the specific memory blocks to classify the specific memory blocks into different memory block groups or a same memory block group based on the error bit information, and performing a test read operation on the plurality of pages in each of the plurality of memory blocks based on whether the specific memory blocks are classified into different memory block groups or the same memory block group.

Abstract: An arithmetic device includes an auto-command/address generation circuit, a first data storage circuit, and a second data storage circuit. The auto-command/address generation circuit generates an auto-load selection signal that activates an auto-load operation based on a level of a power source voltage. In addition, the auto-command/address generation circuit generates an auto-load command for the auto-load operation. The first data storage circuit outputs look-up table data, to which an activation function is applied, to based on the auto-load command. The second data storage circuit stores the look-up table data, output from the first data storage circuit, based on the auto-load command.

Abstract: Methods, systems, and devices related to write broadcast operations associated with a memory device are described. In one example, a memory device in accordance with the described techniques may include a memory array, a sense amplifier array, and a signal development cache configured to store signals (e.g., cache signals, signal states) associated with logic states (e.g., memory states) that may be stored at the memory array (e.g., according to various read or write operations). The memory device may enable read broadcast operations. A read broadcast may occur from the memory array to multiple locations of the signal development cache, for example via one or more multiplexers.

Abstract: A memory apparatus may include at least one memory, and a memory controller configured to receive an address signal and a command through shared pins and store data, provided from an external source, within the memory controller when a write command is inputted without the address signal.

Abstract: A test circuit testing a storage circuit and including a controller, a pattern-generator circuit, a comparing circuit, and a first register is provided. The storage circuit includes a storage block. The controller is configured to generate a plurality of internal test signals. The pattern-generator circuit generates and provides test data to the storage circuit according to the internal test signal. The storage circuit writes the test data into the storage block and reads the storage block to generate read data. The comparing circuit compares the test data and the read data to generate a test result. The first register stores the test result. The controller determines whether the storage circuit is working normally according to the test result stored in the first register.

Abstract: An apparatus includes a central processing unit (CPU) core and a cache subsystem coupled to the CPU core. The cache subsystem includes a memory configured to store a line of data and an error correcting code (ECC) syndrome associated with the line of data, where the ECC syndrome is calculated based on the line of data and the ECC syndrome is a first type ECC. The cache subsystem also includes a controller configured to, in response to a request from a master configured to implement a second type ECC, the request being directed to the line of data, transform the first type ECC syndrome for the line of data to a second type ECC syndrome send a response to the master. The response includes the line of data and the second type ECC syndrome associated with the line of data.

Abstract: Examples of the present disclosure provide apparatuses and methods related to performing comparison operations in a memory. An example apparatus might include a first group of memory cells coupled to a first access line and configured to store a first element. An example apparatus might also include a second group of memory cells coupled to a second access line and configured to store a second element. An example apparatus might also include sensing circuitry configured to compare the first element with the second element by performing a number of AND operations, OR operations, SHIFT operations, and INVERT operations without transferring data via an input/output (I/O) line.

Abstract: A system includes a memory component, and a processing device coupled with the memory component. The processing device to identify a group of management units of the memory component, wherein the group of management units is included in a set of retired groups of management units, select a management unit from the group of management units, perform a media integrity check on the management unit to determine a failed bit count of the management unit, and in response to the failed bit count of the management unit failing to satisfy a threshold criterion, remove the group of management units from the set of retired groups of management units.

Abstract: An imaging device includes a first memory configured to perform writing to multiple addresses thereof by designating the multiple addresses on address-by-address basis, a second memory configured to perform writing simultaneously to multiple address thereof, and a control circuit that controls readout of signals from the first memory and the second memory. The control circuit is configured to perform a first operation mode to sequentially designate the multiple addresses of the first memory and sequentially perform readout of signals from the multiple addresses of the first memory, and a second operation mode to sequentially designate the multiple addresses of the second memory and sequentially perform readout of signals from the multiple addresses of the second memory so that an output value from the second memory becomes the same as a value expected as an output value from the first memory in the first operation mode.

Abstract: Examples include techniques to improve implement an error correction codeword (ECC) scheme to protect data stored to a memory from both hard and random bit errors using a hybrid ECC scheme that includes generation of first and second codewords to protect the data.

Abstract: According to one embodiment, in a memory system, a memory controller is configured to execute a first operation of observing an optimum value of a read voltage and updating a set value based on the observation result of the optimum value, at a predetermined time point of a plurality of time points for updating the set value of the read voltage for a plurality of memory cells, and execute a second operation of updating the set value based on the set value updated at one previous time point without executing the observation of the optimum value, at a time point after one time point of the predetermined time point.

Abstract: A method of verifying a hard post package repair (hPPR) includes steps as follows. A predetermined data background is written into a partial array of a volatile memory. First data are read out from a target row of the partial array of the volatile memory. The volatile memory is commanded to perform the hPPR on the target row. The predetermined data background is written into the partial array of the volatile memory anew after the hPPR has been performed. Second data are read out from a target row of the partial array of the volatile memory. The first data are compared with the second data to verify whether the hPPR fails.

Abstract: A memory apparatus may include at least one memory, and a memory controller configured to receive an address signal and a command through shared pins and store data, provided from an external source, within the memory controller when a write command is inputted without the address signal.

Abstract: A method of erasing data using a file-based protocol from a data storage apparatus for repurposing, reallocation to a new user or retirement of the data storage apparatus, the data storage apparatus comprising a memory using a file-based protocol, and the method comprises: receiving one or more signals representative of the available free space of at least one selected region of the memory; iteratively writing files to the at least one selected region of the memory using the file based protocol, wherein: at least one of the files is sized based on at least one of the received signals and the iterative writing of the files comprises writing the files in sequence such that for at least part of the sequence each file is smaller in size than the preceding file of the sequence; and wherein the files are written to collectively occupy all of the at least one selected region of the memory; and the method further comprises receiving an indication that said at least one selected region of memory is full following the

Abstract: Provided is a semiconductor integrated circuit which can continuously and stably generate an output value even after shipment and a vehicle-mounted control device using the semiconductor integrated circuit. The present invention includes a reference signal generation unit for outputting a reference signal, and detects the operation state of a semiconductor circuit on the basis of a difference between output values from the semiconductor circuit corresponding to the reference signals output at two different time points by the reference signal generation unit.

Abstract: A system for maintaining a repository replication system includes an interface and a processor. The interface is to receive a request to modify a repository, wherein the repository comprises repository copies. The processor is to determine whether modifying the repository resulted in an indication of an error, wherein the indication of the error is based at least in part on a plurality of checksums, wherein a checksum of the plurality of checksums is associated with a repository copy of the repository copies; and in the event that modifying the repository resulted in the indication of the error: queue a repair request to repair the error; and execute a repair process to repair the error associated with the repair request, wherein executing the repair process occurs asynchronously to queuing the error request.

Abstract: A non-volatile memory includes a plurality of physical pages each assigned to one of a plurality of page groups. A controller of the non-volatile memory performs a first calibration read of a sample physical page of a page group of the non-volatile memory. The controller determines if an error metric observed for the first calibration read of the sample physical page satisfies a calibration threshold. The controller calibrates read voltage thresholds of the page group utilizing a first calibration technique based on a determination that the error metric satisfies the calibration threshold and calibrates read voltage thresholds of the page group utilizing a different second calibration technique based on a determination that the error metric does not satisfy the calibration threshold.

Abstract: A mode register control circuit may include a masking signal generation circuit and a storage control pulse generation circuit. The masking signal generation circuit may be configured to generate a masking signal from data. The storage control pulse generation circuit may be configured to generate a storage control pulse for controlling a mode register write operation, from a mode register write pulse in response to the masking signal.

Abstract: Methods for verifying data path integrity are provided. One such method includes reading a partially programmed first set of data from an array of memory cells of the memory device into a page register of the memory device, loading the partially programmed first set of data into a cache register of the memory device, writing a partial set of test data to a portion of the cache register not containing the partially programmed first set of data during a read of a second set of data from the array of memory cells to the page register, reading the partial set of test data from the cache register during the read of the second set of data from the array of memory cells to the page register, and comparing the partial set of test data read from the cache register to the original partial set of test data.

Abstract: A driver of a multi-level signaling interface is provided. The driver may be configured reduce noise in a multi-level signal (e.g., a pulse amplitude modulation signal) generated by the driver using switching components of different polarities. The driver may include a pull-up circuit and/or a pull-down circuit. The pull-up circuit and the pull-down circuit may include at least one switching component of a first polarity (e.g., nmos transistor) and at least one switching component of a second polarity different from the first polarity (e.g., pmos transistor). Such a configuration of pull-up and pull down circuits may generate a more linear relationship between an output current and an output voltage of an output of the driver, thereby improving one or more characteristics of the multi-level signal.

Abstract: A semiconductor device is comprised of a memory cell array with multiple memory cells arranged in a matrix, multiple bit-line pairs provided for each memory cell column in the memory cell array, multiple input/output circuits provided respectively corresponding to the multiple bit-line pairs, and as interface control circuit that controls the data input/output to the multiple input/output circuits when performing the data write and data read for each memory cell row in a normal mode. The interface control circuit is comprised of a selection circuit. When the data write and data read are performed for each memory cell row in a test mode, the selection circuit selects the data input/output to one of first input/output circuit and a second input/output circuit, respectively corresponding to a first memory cell included in the memory cell row and a second memory cell adjoining the first memory cell, according to a test address.

Abstract: A soft information module is coupled between one or more flash memory devices and a decoder. The soft information module receives a putative value of one or more memory cells of the one or more flash memory devices based on a read of the one or more memory cells at an initial read level, and one or more respective indicators of whether the putative value was read at one or more respective different read levels offset from the initial read level, and receives a page indicator for the read. The soft information module determines a cell program region for the read based on the putative value, the one or more respective indicators, and the page indicator, identifies a predetermined confidence value for the region, and provides the confidence value to the decoder for association with the putative value, the confidence value being representative of a likelihood that the one or more memory cells was programmed to the putative value.

Abstract: A method of operation in an integrated circuit (IC) memory device. The method includes refreshing a first group of storage rows in the IC memory device at a first refresh rate. A retention time for each of the rows is tested. The testing for a given row under test includes refreshing at a second refresh rate that is slower than the first refresh rate. The testing is interruptible based on an access request for data stored in the given row under test.

Abstract: Various aspects of the disclosed technology relate to streaming data for testing identical circuit blocks in a circuit. The system for streaming data comprises a first network for transporting equal-sized data packets consecutively and a second network for configuring interface devices of the first network. Each of the data packets comprises bits of test patterns and bits of good-machine test responses. Comparison bits (pass/fail status bits) of an identical circuit block instance may be unloaded directly or may merge with those from other identical circuit block instances to generate accumulated comparison bits which are unloaded. A sticky pass/fail bit may also be generated for each of the identical circuit block instances.

Abstract: A method of forming a read head. The method includes forming first and second read sensors. A first read measurement is performed on a storage medium using the first read sensor. A second read measurement is performed on the storage medium using the second read sensor. Based on a comparison of the first and second read measurements to a predetermined quantity, either the first read sensor or the second read sensor is selected to be operational in a data storage device.

Abstract: Apparatuses and methods are described for selective determination of data error repair. An example apparatus includes a memory array and a controller coupled to the memory array. The controller is configured to direct performance, responsive to a request, of a read operation at an address in the memory array, direct detection of an error in data corresponding to the read operation address, and direct storage of the read operation address in an address error register. The controller is further configured to direct a response be sent to the enable selective determination of data error repair, where the response does not include the read operation address.

Abstract: Embodiments include novel approaches for scan-based device testing using a march controller. A march data store can have sets of march element data stored thereon, each defining a respective march element of a march test sequence. A march select register can select each stored set of march element data according to the predefined march test sequence, and a march data loader can iteratively and sequentially output each set of march element data selected by the march select register. A memory built-in self-test controller can generate, in response to receiving each set of march element data output by the march controller, test stimulus data corresponding to the received set of march element data. The test stimulus data can input to a scan chain of the integrated circuit under test, and response data can be captured from the scan chain and assessed to determine whether the integrated circuit passed the test.

Abstract: A driver of a multi-level signaling interface is provided. The driver may be configured reduce noise in a multi-level signal (e.g., a pulse amplitude modulation signal) generated by the driver using switching components of different polarities. The driver may include a pull-up circuit and/or a pull-down circuit. The pull-up circuit and the pull-down circuit may include at least one switching component of a first polarity (e.g., nmos transistor) and at least one switching component of a second polarity different from the first polarity (e.g., pmos transistor). Such a configuration of pull-up and pull down circuits may generate a more linear relationship between an output current and an output voltage of an output of the driver, thereby improving one or more characteristics of the multi-level signal.

Abstract: A memory device, a memory system, and corresponding methods are provided. The memory device includes a non-volatile random access memory. The non-volatile memory includes a suspect bit register configured to store addresses of bits that are determined to have had errors. The non-volatile memory further includes a bad bit register configured to store addresses of bits that both (i) appeared in the suspect bit register due to a first error and (ii) are determined to have had a second error. Hence, the memory device overcomes the aforementioned intrinsic write-error-rate by identifying the bad bits so they can be fused out, thus avoiding errors during use of the non-volatile random access memory.