Abstract: A memory system is provided. The memory system includes a memory element that is configured to selectively output data stored to and data fetched from the memory element. An error checking station is configured to receive the data stored to and the data fetched from the memory element. The error checking station is further configured to perform error checking on the data.

Abstract: Expedited memory drive self test, including: determining, by a drive self test module, a base block size for testing a memory drive; determining, by a drive self test module, a block group size for testing a memory drive; determining, by the drive self test module, a percentage of the memory drive to test; and for each block group size of memory in the memory drive: testing for media defects, by the drive self test module, a number of blocks in a block group that corresponds to the percentage of the memory drive to test.

Abstract: Methods of memory management are described which can accommodate non-maskable failures in pages of physical memory. In an embodiment, when an impending non-maskable failure in a page of memory is identified, a pristine page of physical memory is used to replace the page containing the impending failure and memory mappings are updated to remap virtual pages from the failed page to the pristine page. When a new page of virtual memory is then allocated by a process, the failed page may be reused if the process identifies that it can accommodate failures and the process is provided with location information for impending failures. In another embodiment, a process may expose information on failure-tolerant regions of virtual address space such that a physical page of memory containing failures only in failure-tolerant regions may be used to store the data instead of using a pristine page.

Abstract: According to one embodiment, a nonvolatile semiconductor memory device comprises a memory cell array, a write control circuit, a latch circuit, an address control circuit, a scan control circuit, and an address latch circuit. The write control circuit executes write and verify for each page of the memory cell array. The latch circuit holds data of the verify result. The address control circuit divides the page into zones and sequentially selects the address of each of the zones. The scan control circuit executes scan so as to count the number of fail bits in zone selected by the address control circuit and determine whether the number of fail bits is not more than the number of allowable bits. The address latch circuit holds the address of a no fail zone, out of the plurality of zones, in which the number of fail bits is 0.

Abstract: In a complex semiconductor device including embedded memories, the round trip latency may be determined during a memory self-test by applying a ping signal having the same latency as control and failure signals used during the self-test. The ping signal may be used for controlling an operation counter in order to obtain a reliable correspondence between the counter value and a memory operation causing a specified memory failure.

Abstract: A data storage device (DSD) tester for testing a DSD is disclosed. The DSD tester comprises control circuitry operable to receive a DSD log from the DSD, wherein the DSD log comprises at least one entry identifying at least one error condition. A sequence of commands associated with the error condition is executed in order to determine whether the DSD is defective.

Abstract: Embodiments for providing improved reliability or extended life for a non-volatile memory component may comprise a secondary non-volatile memory component to store error correction information, for example.

Abstract: A DDR signal testing assistant device includes a body. The body is detachably locked to a motherboard integrated with a DDR connector. The DDR connector defines a plurality of pins. The body defines a plurality of testing holes corresponding and mating with the pins. Each testing hole of the body is marked with characters. The characters indicate the denomination or property of each corresponding pin of the DDR connector.

Abstract: The invention discloses a method and a system for optimizing address generation for simultaneously running proximity-based Built-In-Self-Test (BIST) algorithms. The method also describes simultaneously testing proximity-based faults for different memories having column multiplexers of different sizes using the BIST algorithms. The system described above may be embodied in the form of a Built-In-Self-Test (BIST) controller. Further, the method includes selecting a memory having the largest size of column multiplexer (CMmax). After selecting the memory, size of an address-width register is extended to form an extended address-width register. Thereafter, an extended width address is generated using the extended address-width register and the extended width address is used to generate addresses for the memories. After generating the addresses, read and write operations are performed on the memories based on pre-defined rules, wherein the read and write operations provide testing of the memories.

Abstract: Flash memory is written to by determining a measure of health for each of a plurality of locations in flash memory. At least one of the plurality of locations in flash memory is selected based at least in part on the determined measures of health and the selected location(s) in flash memory is/are written to.

Abstract: A Solid-State Disk (SSD) Manufacturing Self Test (MST) capability enables an SSD manufacturer to generate and load tests onto SSDs, run the tests, and gather results. The SSDs self execute the loaded tests when powered up. The self executing is while coupled to a host that loaded the tests or while coupled to a rack unable to load the tests but enabled to provide power to the SSDs. The rack is optionally cost-reduced to enable cost-efficient parallel testing of relatively larger numbers of SSDs for production. The host writes the tests to an ‘input’ SMART log of each SSD, and each SSD writes results to a respective included ‘output’ SMART log. The commands include write drive, erase drive, SATA PHY burn-in, delay, and stress mode. The SSD MST capability is optionally used in conjunction with an SSD virtual manufacturing model.

Abstract: In one aspect, the present disclosure provides a storage device for accounting for transmission errors to improve a usable life span of memory blocks. In some embodiments, the storage device includes: a memory array including a plurality of memory blocks; and a memory controller in communication with the memory array via an interface, wherein the memory controller is configured to detect an error event associated with data from one of the plurality of memory blocks; determine an origin of the error event; increment an error count if the origin of the error event indicates a data error in the one of the plurality of memory blocks and not if the origin of the error event indicates a transmission error; compare the error count to a threshold value; and mark the one of the plurality of memory blocks as bad when the error count exceeds the threshold value.

Abstract: In one embodiment an example apparatus includes a memory with an error detection system (EDS) that detects an error event in the memory. The error event involves at least one bit in the memory changing state erroneously. The apparatus also includes a scrub logic to scrub the memory and correct memory errors (e.g., bit errors). The apparatus also includes a scrub rate adaptive logic to selectively control a memory scrub frequency associated with the scrub logic where the control is based, at least in part, on a number of error events detected by the EDS during an interval of time. A memory scrub frequency is the rate that a memory is periodically scrubbed to remove errors.

Abstract: The method of generating an address scramble includes receiving address information for each of a plurality of memory cells included in a semiconductor memory device and the address information that includes a logical address and a physical address corresponding to each of the memory cells; generating an address scramble logical expression, the address scramble logical expression relating logical addresses to physical addresses based on the address information; and reducing the address scramble logical expression using a given algorithm.

Abstract: Implementations include systems, methods and/or devices suitable for use in a memory system that may enhance the performance of error control codes used to improve the reliability with which data can be stored and read. Some implementations include systems, methods and/or devices enabled to generate and utilize soft information for decoding encoded data read from a storage medium. More specifically, some implementations utilize a collection of characterization vectors that include soft information values for bit-tuples that may be read from the storage medium for various combinations of the storage medium characterization parameter values. Some implementations are enabled to determine and utilize read comparison signal values associated with one or more storage medium characterization parameter values.

Abstract: Various embodiments of a semiconductor memory apparatus are disclosed. In one exemplary embodiment, the semiconductor memory apparatus includes a core block configured to receive and store external input data, a control unit configured to activate a control signal in response to a test mode signal and a command, when the external input data has a predetermined value, and a fuse circuit configured to perform fuse programming when the control signal is activated.

Abstract: A support element for verifying an array repair code solution includes a memory subsystem element including product data read from multichip modules utilized in a mainframe computing device, a wafer test repair algorithm, and a system test repair algorithm. The support element also includes a CPU emulator that causes the support element to perform an initial microcode load that includes a memory test, the memory test applying the wafer test repair algorithm to the product data to generate a wafer test repair solution and the system test repair algorithm to the product data to generate a system test repair solution and one or more repair rings for storing the wafer test repair solution and the system test repair solution.

Abstract: An integrated circuit is interfaced with at least one dynamic random access memory (DRAM) via a memory interface. A plurality of user test options are received. The testing of the memory interface is controlled in accordance with the plurality of user test options. Test data, generated as a result of the testing of the memory interface, is stored.

Abstract: In a method for testing an address bus in a logic module, a logic module, a computer program and a computer program product, the method provides for a logic module to have at least one data register, into which addresses detected by the address decoder are written.

Abstract: Systems and methods for performing parallel test operations on Static Random Access Memory (SRAM) cells are disclosed. In general, each parallel test operation is a test operation performed on a block of the SRAM cells in parallel, or simultaneously. In one embodiment, the SRAM cells are arranged into multiple rows and multiple columns where the columns are further arranged into one or more column groups. The block of the SRAM cells for each parallel test operation includes SRAM cells in two or more of the rows, SRAM cells in two or more columns in the same column group, or both SRAM cells in two or more rows and SRAM cells in two or more columns in the same column group.

Abstract: An integrated circuit includes a storing unit; and a tester that executes a write and read test on the storing unit based on received test information including a pair of address and data, the tester including: a first retain unit that retains, when a write is made based on the test information, the first write address and the first write data used in the write; a first generator that generates, based on the first write address retained in the first retain unit, a first read address used for reading first read data from the first read address in the storing unit simultaneously with writing second write data to a second write address based on the test information; and a second generator that generates, based on the first write data retained in the first retain unit, an expected value of the first read data.

Abstract: A semiconductor memory in which arbitrary operation mode information is set in a plurality of CRs at test time. When a CR (configuration register) control circuit detects write commands to write to an address or read commands to read from the address in a predetermined order, the CR control circuit updates the operation mode information for each of the plurality of CRs on a time division basis. A command generation section generates the write commands, the read commands, or a test start command in response to a control signal from the outside. A data pad compression circuit changes the operation mode information to be written to the plurality of CRs by using test data inputted to part of data pads, after inverting the test data or in its original condition according to a code, as data for a rest of the data pads.

Abstract: A method for rapidly characterizing the forensic contents of a digital storage device using statistical drive sampling.

Abstract: A burn-in method for an embedded Multi Media Card (eMMC), and a test board using the same, and an eMMC tested by the same. The disclosed burn-in method comprises the steps as below: writing a test pattern to a flash memory of the eMMC; electrically connecting a command line of the eMMC to ground to operate the eMMC in a boot state; performing a burn-in procedure on the flash memory when the eMMC is in the boot state and the test pattern is recognized as being contained in the flash memory; and collecting a test report during the burn-in procedure, wherein the test report is stored in the flash memory.

Abstract: A memory system including a memory and, to perform a writing operation to store user data among a plurality of cells of the memory, a pilot generator module, a multiplexer module, and a write module. The pilot generator module is configured to randomly alternate between selection of a first scheme by which pilot data is to be stored, along with the user data, among the plurality of cells of the memory, and a second scheme by which the pilot data is to be stored, along with the user data, among the plurality of cells. The pilot data comprises a known predetermined sequence. The multiplexer module is configured to combine the pilot data and the user data in accordance with the selection of the first scheme and the second scheme. The write module is configured to write the pilot data and the user data among the plurality of cells.

Abstract: In memory devices that degrade with use, a memory controller may monitor and record a usage history of portions of the memory. The memory controller can then vary a strength of error correction coding to protect information written to various portions of the memory having different usage histories. More specifically, and memory can receive information to be stored in the memory, select a portion of memory to store the information, and store the information in the selected portion of the memory with an error correction coding having a strength that is based on a usage history of the selected portion of the memory.

Abstract: A method for operating a memory (36) includes storing data in a plurality of analog memory cells (40) that are fabricated on a first semiconductor die by writing input storage values to a group of the analog memory cells. After storing the data, multiple output storage values are read from each of the analog memory cells in the group using respective, different threshold sets of read thresholds, thus providing multiple output sets of the output storage values corresponding respectively to the threshold sets. The multiple output sets of the output storage values are preprocessed by circuitry (48) that is fabricated on the first semiconductor die, to produce preprocessed data. The preprocessed data is provided to a memory controller (28), which is fabricated on a second semiconductor die that is different from the first semiconductor die, so as to enable the memory controller to reconstruct the data responsively to the preprocessed data.

Abstract: A method and apparatus for detecting a free page of a memory device, and a method and apparatus for decoding an error correction code by using the method and apparatus for detecting a free page are provided. Free page data read from the memory is converted into a converted codeword for inclusion as an element of an error correction code field. The converted codeword is compared to an initially set target codeword to detect an amount of non-identical bits. A page read from the memory is determined to be a free page when the amount of non-identical bits is equal to or less than an initially set threshold value.

Abstract: A memory initialization method in a boot sequence of an information processing apparatus having a memory and a plurality of processors sharing the memory, the memory initialization method includes initializing a first area of the memory required for an operation of the firmware and a second area of the memory required for a kernel activation by executing the firmware stored in a first storage by a first processor, storing the kernel to the initialized second area from a second storage by executing the firmware by the first processor, making a second processor activate and execute the kernel stored in the second area by executing the firmware by the first processor, and initializing a remaining area of the memory by the kernel executed by the second processor and the firmware executed by the first processor in parallel.

Abstract: Integrated circuits with memory built-in self test (MBIST) circuitry and methods are disclosed that employ enhanced features. In one aspect of the invention, an integrated circuit is provided having MIBST circuitry configured to serially test multiple arrays of memory elements within a component of the integrated circuit and to also conduct parallel initialization of the serially tested arrays. In another aspect of the invention, the MBST circuitry is used set the memory elements of the arrays to a first state and then to an inverse state during a burn-in operation to maintain each of the two opposing states for a desired time in order to either force a failure of the integrated circuit component or produce a pre-stressed component beyond an infancy stage.

Abstract: The present invention provides a method and system for improving memory testing efficiency, raising the speed of memory testing, detecting memory failures occurring at the memory operating frequency, and reducing data reported for redundancy repair analysis. The memory testing system includes a first memory tester extracting failed memory location information from the memory at a higher memory operating frequency, an external memory tester receiving failed memory location information at a lower memory tester frequency, and an interface between the first memory tester and the external memory tester. The memory testing method uses data strobes at the memory tester frequency to clock out failed memory location information obtained at the higher memory operating frequency. In addition, the inventive method reports only enough information to the external memory tester for it to determine row, column and single bit failures repairable with the available redundant resources.

Abstract: An address signal generating circuit generates an address signal which designates the address in memory to be accessed. An inversion inhibition signal generating unit generates multiple patterns of inversion inhibition signals each having the same bit width as that of the address signal, and each having a function of preventing particular bits of the address signal from being inverted. A selector selects one of the multiple patterns of inversion inhibition signals generated by the inversion inhibition signal generating unit, and outputs the inversion inhibition signal thus selected. When an inversion control signal is asserted, an address signal inverting circuit inverts only the bits of the address signal which are not prevented from being inverted according to the inversion inhibition signal selected by the selector, and outputs the resulting address signal.

Abstract: Example methods, apparatus and articles of manufacture to diagnose temperature-induced memory errors are disclosed. A disclosed example method to diagnose a temperature-induced memory error includes detecting a memory error associated with a memory device, and writing a highest measured temperature of the memory device in the memory device when the memory error is detected, the highest temperature measured temporally near the detected memory error.

Abstract: A storage system with a data recovery function and its method reduce errors in a storage medium to a recoverable range of a general ECC function by repeating a testing and recovery procedure for one or more times to assure the accuracy of reading data and enhance the data reliability effectively. The data recovery procedure includes the steps of providing test data by a test data generator of the storage system, writing the test data into a memory block where error data is found, finding an error bit by reading the test data, reducing the error to a recoverable range of the ECC technique by the recovery procedure. If the error bit cannot be found or reduced to a recoverable range of the ECC technique within an upper limit of the number of tests, the memory block is marked as bad.

Abstract: Method for testing a memory under test (1) including a plurality of memory cells and a Memory Built-In Self-Test Engine (2) connectable to a memory under test. The MBIST engine (2) is arranged to generate appropriate addressing and read and/or write operations to the memory under test (1). The MBIST engine (2) is connected to a March Element Stress register (MESR) (3), a generic march element register (GMER) (4), and a Command Memory (5). The GMER (4) specifies one of a set of Generic March Elements (GME), and the MESR (3) specifies the stress conditions to be applied. Only a few GMEs are required in order to specify most industrial algorithms. The architecture is orthogonal and modular, and all speed related information is contained in the GME. In addition, only little memory is required for the specification of the test, providing a low implementation cost, yet with a high flexibility.

Abstract: Systems and methods are provided for selectively retiring blocks based on refresh events of those blocks. In addition to refresh events, other criteria may be applied in making a decision whether to retire a block. By applying the criteria, the system is able to selectively retire blocks that may otherwise continue to be refreshed.

Abstract: A memory hard macro designed to support multiple design for test (DFT) techniques having signal paths associated with the DFT techniques and the functional operation of the memory instance that share logic devices or components. The memory hard macro includes a functional input port and a functional output port, forming a functional memory data path, which includes input latches from the memory instance. The memory hard macro also includes a scan input port and a scan output port, forming a scan data path, which includes input latches from the array of data buffer circuits and output latches from the array of sense amplifiers. The memory hard macro further includes a BIST input port and a BIST output port, forming a BIST data path, which includes at least one input latch from the array of data buffer circuits and at least one output latch from the array of sense amplifiers.

Abstract: In one embodiment, the present invention includes a de-serializer to receive serial data at a first rate and to output a parallel data frame corresponding to the serial data aligned to a frame alignment boundary in response to a phase control signal received from a feedback loop coupled between the de-serializer and a receiver logic coupled to an output of the de-serializer. Other embodiments are described and claimed.

Abstract: Various embodiments of the invention pertain to a technique of recovering data from a portion of a non-volatile memory which was not reliably read because the number of read errors exceeded the ability of the ECC process to correct those errors. For each cell in that portion of memory, a quantized estimate is made of the amount of offset in the read reference voltage that is predicted to correct for any systematic noise that may have affected the reading of that cell. For each quantized offset, the read reference voltage is adjusted by that amount and data from the relevant cells is read. The combined results for all the cells are then processed through the ECC again.

Abstract: A scanning apparatus and a method thereof include a scanning unit scanning a document and outputting a scanned result, at least one external storage unit detachably attached to the apparatus, at least one internal storage unit, and a controller detecting an attachment state of the external storage unit and storing the scanned result in one of the external storage unit and the internal storage unit according to the attachment state of the external storage unit. The scanning unit of the scanning apparatus is combined with a user scanning unit and a user printing unit into a combination apparatus, and the scanned result is printed in a printing apparatus spaced-apart from the scanning apparatus by a distance, thereby removing cables between the scanning or printing apparatus and a personal computer.

Abstract: Detecting leaky memory during the execution of an application in a data processing system. A memory controller identifies a leaky section of memory and delegates to an allocation component to allocate more memory. An isolator component isolates the memory section and further divides the memory section into subsections. Each section and each subsection are tested to determine if memory resources are strained to identify an application or its component causing the strain. Each section and subsection are further divided and isolated until the leaky portion of memory is identified, and as a result, the software component causing the leak can also be identified.

Abstract: A method of operation of a non-volatile memory system includes: generating a test stimulus for a page in a memory array; measuring a test response from the page in the memory array based on the test stimulus; calculating a measured effective life of the page from the test response; and determining a use plan according to the measured effective life for accessing the page.

Abstract: A semiconductor memory device including a data bus inversion (DBI) determination unit, a first inverter, a cyclic redundancy check (CRC) calculation unit, a second inverter, and a DQ pin. The DBI determination unit is configured to determine whether to perform DBI based on first data on a main data line and configured to generate DBI data. The first inverter is configured to invert or non-invert the first data according to the DBI data to generate second data. The CRC calculation unit is configured to generate CRC data based on the second data and the DBI data. The second inverter is configured to invert or non-invert the first data according to the DBI data to generate third data. The DQ pin is configured to output the third data externally.

Abstract: In a memory test system with advance features for completed memory system, the hardware components are independently configured to generate versatile test patterns for performing a programmable-loading test, a real case test, and a write-feedback test. The write-feedback test is employed to independently test a memory controller which is embedded in an integrated circuit without communicating with the external SDRAM. In the integrated circuit verification stage, the memory test system supports for analyzing and distinguishing the problems inside or outside of the integrated circuit, and testing individual write and read commands.

Abstract: An integrated circuit is described that has a substrate with a memory array with dedicated support hardware formed on the substrate. An access wrapper circuit is coupled to address and data lines of the memory array and to control lines of the dedicated support hardware. The wrapper circuit is configured to provide an access port to the memory array. A test controller is formed on the substrate and coupled in parallel with the access wrapper circuit to the address and data lines of the memory array and to the control lines of the dedicated support hardware, wherein the test controller is operable to perform a test of the memory array by manipulating control signals to the support hardware in addition to those required to write data patterns into the memory array and to read the contents of the memory array.

Abstract: A method for enhancing verification efficiency regarding error handling mechanism of a controller of a Flash memory includes: providing an error generation module, for generating errors; and triggering the error generation module to actively generate errors of at least one specific type in order to increase an error rate corresponding to the specific type. An associated memory device and the controller thereof are provided, where the controller includes: a ROM arranged to store a program code; a microprocessor arranged to execute the program code to control access to the Flash memory and manage a plurality of blocks, and further enhance the verification efficiency regarding error handling mechanism of the controller; and an error generation module arranged to generate errors. The controller that executes the program code by utilizing the microprocessor triggers the error generation module to actively generate errors of at least one specific type to increase an error rate.

Abstract: A storage device according to some aspects of the invention includes a communication unit configured to perform processing for communication with a host apparatus; a storage unit configured to have a first memory area and a second memory area that store therein received data from the host apparatus, and memory area selection information; a memory control unit configured to select one of the first memory area and the second memory area as a memory area for reading, select the other one thereof as a memory area for writing, and perform control of reading and writing; and an increment determination unit configured to compare a value of data having been read out from the memory area for reading by the memory control unit and a value of the received data to determine a magnitude relation therebetween.

Abstract: A data processing method for a non-volatile memory device is provided. The non-volatile memory device includes a controller and a NAND flash memory. First, a target command and a corresponding target address are serially transmitted from the controller to the NAND flash memory. Then, the NAND flash memory calculates a first value according to the target address. Moreover, a cyclic redundancy check code corresponding to the target address is transmitted from the controller transmits to the NAND flash memory. Next, the NAND flash memory determines whether a transmission error has occurred by performing a cyclic redundancy check according to the first value and the cyclic redundancy check code. When the transmission error has occurred, a status register is set to inform the controller to re-transmit the target command and the corresponding target address.

Abstract: Failure and repair information collected during self-testing of arrays in an integrated circuit is stored in a centralized array in the integrated circuit. In that way, a centralized array can be read out to provide failure and repair information on the arrays in the integrated circuit rather than having to read from each array. In addition, the failure and repair information may also be stored in the array under test for certain of the arrays.

Abstract: A pseudo random bit stream generator is disclosed which has a fully programmable pseudo random polynomial up to the supported width of the CSRs, fully programmable tap selection for providing any specified combination of generator state taps, and fully programmable parallel sequence generation which determines the number of sequential bits calculated and how much the sequence generator advances per clock.