Abstract: Methods, systems, and apparatuses include receiving, from a host, an error check functionality request for a memory device that stores encoded data. The encoded data is written to a verification portion of memory with at least one intentional error. A read command of the verification portion is initiated in response to the request. An error check functionality indicator is determined based on a result of the read command and a number of intentional errors in the encoded data. The error check functionality indicator corresponding to the number intentional errors in the encoded data is sent to the host.

Abstract: Methods, systems, and devices related to auto-referenced memory cell read techniques are described. The auto-referenced read may encode user data to include a predetermined number of bits having a first logic state prior to storing the user data in memory cells. The auto-referenced read may store a total number of bits of the user data having a first logic state in a separate set of memory cells. Subsequently, reading the user data may be carried out by applying a read voltage to the memory cells storing the user data while monitoring a series of switching events by activating a subset of the memory cells having the first logic state. During the read operation, the auto-referenced read may compare the number of activated memory cells to either the predetermined number or the total number to determine whether all the bits having the first logic state has been detected.

Abstract: This disclosure proposes an inventive system capable of testing a component in the system during runtime. The system may comprise: a substrate; a plurality of functional components, of the plurality of functional components being mounted onto the substrate and including a circuitry; a system bus formed with electrically conductive pattern onto the substrate thereby allowing the plurality of functional components to communicate with each other; one or more wrappers, each of the one or more wrappers connected to one of the plurality of functional components; and an in-system component tester (ICT) configured to: select, as a component under test (CUT), at least one functional component, in an idle state, of the plurality of the functional components; and test, via the one or more test wrappers, the at least one functional component selected as the CUT.

Abstract: A circuit for improving control over asynchronous signal crossings during circuit scan tests includes multiple scan registers and a decoder configured to translate a combined output of the scan registers into multiple one-hot controls to the local clock gates of scan registers disposed in multiple different clock domains. Programmable registers are provided to selectively enable and disable the local clock gates of the different clock domains.

Abstract: A method for testing a memory area. The method includes jumping from a destination address to a source address, reading a data word at the source address after jumping to the source address, and examining the data word. The source address was determined based on a static test.

Abstract: Provided is a variable resistance random-access memory for suppressing degradation of performance by recovering a memory cell that fails. A variable resistance random-access memory of the disclosure includes a memory array, a row selection circuit, a column selection circuit, a controller, an error checking and correcting (ECC) circuit, an error bit flag register, and an error bit address register. The memory array includes a plurality of memory cells. The column selection circuit includes a sense amplifier and a write driver/read bias circuit. The error bit flag register stores bits for indicating presence/absence of an error bit in a write operation. The error bit address register stores an address of the error bit. The controller recovers the error bit when a predetermined event occurs.

Abstract: An apparatus for controlling an operation in a memory system includes a volatile memory including plural memory cells, a column data checking circuitry configured to determine whether all pieces of data outputted from memory cells corresponding to a bit line are identical to each other, and an error correction circuitry configured to determine whether the pieces of data include an error based at least on a type of data, a state of data, and an output of the column data checking circuitry, and to resolve the error.

Abstract: A cache memory is disclosed. The cache memory includes an instruction memory portion, a tag memory portion, and one or more peripheral circuits configured to receive a CPU address corresponding with an address of the RAM memory storing a particular CPU instruction. The one or more peripheral circuits are configured to receive a way quantity indication indicating of a number of ways into which the instruction memory portion and the tag memory portion are to be subdivided, the one or more peripheral circuits are configured to identify which bits of the CPU address form the tag portion based on the way quantity indication, and the one or more peripheral circuits are configured to determine whether the particular CPU instruction is stored in the cache memory based on the identified tag portion of the CPU address and tag data stored in the cache memory.

Abstract: A memory device includes a syndrome generating circuit and a plurality of latch circuits. The syndrome generating circuit includes a plurality of input terminals and plurality of logic circuits. The latch circuits are coupled to the syndrome generating circuit and are configured to set the input terminals of the syndrome generating circuit to a predetermined logic state according to a pre-charge reset signal. The latch circuits are configured to provide a plurality of data bits to the input terminals of the syndrome generating circuit after the input terminals of the syndrome generating circuit are set to the predetermined logic state. The syndrome generating circuit is configured to generate a syndrome bit based on the data bits by the logic circuits, wherein the syndrome bit indicates a presence of an error bit among the data bits.

Abstract: Methods, systems, and devices related to auto-referenced memory cell read techniques are described. The auto-referenced read may encode user data to include a predetermined number of bits having a first logic state prior to storing the user data in memory cells. The auto-referenced read may store a total number of bits of the user data having a first logic state in a separate set of memory cells. Subsequently, reading the user data may be carried out by applying a read voltage to the memory cells storing the user data while monitoring a series of switching events by activating a subset of the memory cells having the first logic state. During the read operation, the auto-referenced read may compare the number of activated memory cells to either the predetermined number or the total number to determine whether all the bits having the first logic state has been detected.

Abstract: There are provided a microcontroller, a memory system having the same, and a method for operating the same. A memory system includes: a semiconductor memory performing a scanning operation on ROM data stored in a microcontroller in a test operation and outputting a result of the scanning operation as a status output signal; and a controller for determining whether an error exists in the ROM data, using the status output signal.

Abstract: A memory system and a method for operating the same, wherein the memory system includes a first memory and a second memory each configured to store data. The memory system further includes a test and repair circuit operationally connected to the first memory and to the second memory. The test and repair circuit is configured to receive a test initiation signal and perform, in response to receiving the test initiation signal, a test operation on at least one of the first memory and the second memory. The test and repair circuit is also configured to perform, based on a result of the test operation, a repair operation on the at least one of the first memory and the second memory.

Abstract: A memory device includes a load generator and a memory controller. The load generator outputs loads for first accesses directed to a memory, irrespective of attributes and characteristics of master devices. The load generator outputs the loads at a constant bandwidth without a change in a bandwidth for outputting the loads. The memory controller receives the loads from the load generator, or receives requests for second accesses directed to the memory from the master devices through a bus. The memory controllers processes the loads such that operations associated with the first accesses are performed in the memory, or processes the requests such that operations associated with the second accesses are performed in the memory. The memory controller processes the loads in a manner which is identical to a manner of processing the requests.

Abstract: Provided is a variable resistance random-access memory for suppressing degradation of performance by recovering a memory cell that fails. A variable resistance random-access memory of the disclosure includes a memory array, a row selection circuit, a column selection circuit, a controller, an error checking and correcting (ECC) circuit, an error bit flag register, and an error bit address register. The memory array includes a plurality of memory cells. The column selection circuit includes a sense amplifier and a write driver/read bias circuit. The error bit flag register stores bits for indicating presence/absence of an error bit in a write operation. The error bit address register stores an address of the error bit. The controller recovers the error bit when a predetermined event occurs.

Abstract: Methods, systems, and devices related to auto-referenced memory cell read techniques are described. The auto-referenced read may encode user data to include a predetermined number of bits having a first logic state prior to storing the user data in memory cells. The auto-referenced read may store a total number of bits of the user data having a first logic state in a separate set of memory cells. Subsequently, reading the user data may be carried out by applying a read voltage to the memory cells storing the user data while monitoring a series of switching events by activating a subset of the memory cells having the first logic state. During the read operation, the auto-referenced read may compare the number of activated memory cells to either the predetermined number or the total number to determine whether all the bits having the first logic state has been detected.

Abstract: It is described a method for protecting unauthorized data access from a memory area of a computing system operable in a first operating mode and in at least one second operating mode, the method comprising: requesting, in the first operating mode, payload data stored in a memory area from a memory controller; retrieving, by the memory controller, the payload data from the memory area; retrieving, by the memory controller, second check data associated with the payload data from the memory area; failing by checking the payload data using the second check data according to a first check mechanism, while a check of the payload data using the second check data according to a second check mechanism passes.

Abstract: There are provided a memory controller and a memory system having the same. A memory controller includes: an internal memory for storing error injection information for an error test operation and error test information that is a result of the error test operation; and a central processing unit for receiving first sector data from a host, and performing an error test operation on a memory device according to the error injection information, when the error injection information is included in the first sector data.

Abstract: Methods, systems, and devices related to auto-referenced memory cell read techniques are described. The auto-referenced read may encode user data to include a predetermined number of bits having a first logic state prior to storing the user data in memory cells. The auto-referenced read may store a total number of bits of the user data having a first logic state in a separate set of memory cells. Subsequently, reading the user data may be carried out by applying a read voltage to the memory cells storing the user data while monitoring a series of switching events by activating a subset of the memory cells having the first logic state. During the read operation, the auto-referenced read may compare the number of activated memory cells to either the predetermined number or the total number to determine whether all the bits having the first logic state has been detected.

Abstract: In the disclosed design systems and methods, a schematic diagram includes nets and, connected to at least some nets, single-pin first and second imaginary devices. On any given net, a first imaginary device is associated with a tracking group property of the net (where nets in the same tracking group are in-phase) and a second imaginary device is associated with a voltage property of the net. A design layout generated based on the schematic diagram includes: net shapes representing the nets and, on net shapes that represent nets connected to the imaginary devices, tracking group and voltage labels corresponding to the tracking group and voltage properties. Net shape placement within the design layout and design rule checking are performed according to design rules that dictate placing net shapes with the same tracking group label together and further dictate minimum allowable spacing requirements depending upon the tracking group and voltage labels.

Abstract: The present invention facilitates efficient and effective utilization of storage management features. In one embodiment, a memory device comprises a memory interface, an ECC generation component, and storage components. The memory interface is configured to receive an access request to an address at which data is stored. The memory interface can also forward responses to the request including the data and ECC information associated with the data. The ECC generation component is configured to automatically establish an address at which the ECC information is stored based upon the receipt of the access request to an address at which data is stored. In one exemplary implementation, the internal establishment of the address at which the ECC information is stored is automatic. The storage components are configured to store the information.

Abstract: There is to provide a semiconductor device capable of realizing a start time diagnosis on a non-volatile memory without any external device and any non-volatile memory out of a diagnosis target. The non-volatile memory includes an address space formed by addresses continuously read and a reservation address formed by a single or a plurality of addresses, read after the address space. A previously calculated value fixed data is stored in the reservation address. When all the data stored in the address space and the value fixed data are compressed using a predetermined initial value according to a predetermined compression algorithm, the value fixed data is the data for converging the compression value to a predetermined fixed value (for example, 0).

Abstract: This document describes systems, devices, and methods for testing the integration of a content provider's origin infrastructure with a content delivery network (CDN). In embodiments, the teachings hereof enable a content provider's developer to rapidly and flexibly create test environments that send test traffic through the same CDN hardware and software that handle (or at least have the ability to handle) production traffic, but in isolation from that production traffic and from each other. Furthermore, in embodiments, the teachings hereof enable the content provider to specify an arbitrary test origin behind its corporate firewall with which the CDN should communicate.

Abstract: Methods, systems, and devices related to auto-referenced memory cell read techniques are described. The auto-referenced read may encode user data to include a predetermined number of bits having a first logic state prior to storing the user data in memory cells. The auto-referenced read may store a total number of bits of the user data having a first logic state in a separate set of memory cells. Subsequently, reading the user data may be carried out by applying a read voltage to the memory cells storing the user data while monitoring a series of switching events by activating a subset of the memory cells having the first logic state. During the read operation, the auto-referenced read may compare the number of activated memory cells to either the predetermined number or the total number to determine whether all the bits having the first logic state has been detected.

Abstract: In general, the technology relates to a method for managing persistent storage. The method includes selecting a sample set of physical addresses in a solid state memory module, and performing a garbage collection operation on the sample set of physical addresses. The method further includes, after the garbage collection operation, issuing a write request to the sample set of physical addresses, issuing a request read to the sample set of physical addresses to obtain a copy of the data stored in the sample set of physical addresses, determining an error rate in the copy of the data stored using an Error Correction Code codeword or known data in the write request, determining a calculated P/E cycle value for the SSMM using at least the error rate, and updating an in-memory data structure in a control module with the calculated P/E cycle value.

Abstract: The write reliability of a nonvolatile memory is improved by performing accurate verification of write data. In a memory controller of an information processing system, a determination unit determines whether a state of a memory cell after writing data is stable in a nonvolatile memory including the memory cell having an unstable state period after writing data. A verification unit performs verification by comparing read data which is read from the memory cell where the data is written on the basis of a result of the determination, with write data involved in the writing. A write control unit performs writing of the data and rewriting of the write data based on a result of the verification.

Abstract: An apparatus that moves stimulus data and response data between a memory and a device under test (DUT) over a plurality of data transfer banks. In a first mode the data transfer banks output the stimulus data to the DUT as respective independent banks of serial stimulus data channels, and write the response data into the memory responsive to data provided as respective independent banks of channels of serial data from the DUT. In a second mode the data transfer banks output the stimulus data to the DUT as a single bank of combined serial stimulus data channels, and write the response data into the memory responsive to the data provided as a combined single bank of channels of serial data from the DUT.

Abstract: IEEE 1149.1 Test Access Ports (TAPs) may be utilized at both IC and intellectual property core design levels. TAPs serve as serial communication ports for accessing a variety of embedded circuitry within ICs and cores including; IEEE 1149.1 boundary scan circuitry, built in test circuitry, internal scan circuitry, IEEE 1149.4 mixed signal test circuitry, IEEE P5001 in-circuit emulation circuitry, and IEEE P1532 in-system programming circuitry. Selectable access to TAPs within ICs is desirable since in many instances being able to access only the desired TAP(s) leads to improvements in the way testing, emulation, and programming may be performed within an IC. A TAP linking module is described that allows TAPs embedded within an IC to be selectively accessed using 1149.1 instruction scan operations.

Abstract: A memory system includes a semiconductor memory device and a test device. The semiconductor memory device includes a memory cell array, an error correction circuit and a test circuit. The test device controls a test of the semiconductor memory device, and the test device includes a first fail address memory and a second fail address memory. The test circuit performs a first test on the memory cell array to selectively record a first test result associated with the first test in the first fail address memory and performs a second test on the memory cell array to record a second test result associated with the second test in the second fail address memory. The test circuit is configured to perform the first test and the second test based on a test pattern data from the test device in a test mode.

Abstract: A memory device and a data reading method are provided. A dummy circuit performs a read operation in synchronism with a data access circuit according to an address signal, so as to estimate time points at which the data access circuit completes each of operating procedures, and enable the data access circuit to execute a next operating procedure when completing an operating procedure.

Abstract: A semiconductor memory device and a scrambling method thereof are provided, which are capable of realizing a balance between a data scrambling function and an accessible time. The semiconductor memory device of the invention includes a page buffer/sense circuit with the data scrambling function. During a programming operation, the page buffer/sense circuit holds data to be programmed, performs a scrambling process on the held data and programs the scrambled data to a selected page of a memory array. During a reading operation, the page buffer/sense circuit holds data read from the selected page and performs a descrambling process on the held data.

Abstract: Provided are a memory device and a memory module, which perform both an ECC operation and a redundancy repair operation. The memory device repairs a single-bit error due to a ‘fail’ cell by using an error correction code (ECC) operation, and also repairs the ‘fail’ cell by using a redundancy repair operation when the ‘fail’ cell is not repairable by the ECC operation. The redundancy repair operation includes a data line repair and a block repair. The ECC operation may change a codeword corresponding to data per one unit of memory cells including the ‘fail’ cell, and may also change the size of parity bits regarding the changed codeword.

Abstract: Systems, methods, and/or devices are used to implement variable bit encoding per NAND flash cell to extend life of flash-based storage devices and preserve over-provisioning. In some embodiments, the method includes detecting a trigger condition with respect to one or more non-volatile memory portions (e.g., portions configured to store data encoded in a first encoding format and having a first storage density) of a plurality of non-volatile memory portions of a storage device. In response to detecting the trigger condition and in accordance with a first determination that a projected amount of over-provisioning (e.g., corresponding to over-provisioning for the storage device after reconfiguring the one or more non-volatile memory portions to store data encoded in a second encoding format and having a second storage density) meets predefined over-provisioning criteria, the method includes reconfiguring the one or more non-volatile memory portions to store data encoded in the second encoding format.

Abstract: A portion of a reprogrammable storage device is used to implement permanent data storage. The storage device includes a plurality of electrically erasable memory elements and a controller. The plurality of electrically erasable memory elements are configured to store data. Each memory element is programmable a number of write cycles before reaching a write failure state. The controller is coupled to the plurality of memory elements. The controller includes a receiver and a write engine. The receiver receives an instruction to drive a selected memory element to the write failure state. The write engine repeatedly writes a data value, in a plurality of write operations, to the selected memory element until the write failure state of the selected memory element is established.

Abstract: IEEE 1149.1 Test Access Ports (TAPs) may be utilized at both IC and intellectual property core design levels. TAPs serve as serial communication ports for accessing a variety of embedded circuitry within ICs and cores including; IEEE 1149.1 boundary scan circuitry, built in test circuitry, internal scan circuitry, IEEE 1149.4 mixed signal test circuitry, IEEE P5001 in-circuit emulation circuitry, and IEEE P1532 in-system programming circuitry. Selectable access to TAPs within ICs is desirable since in many instances being able to access only the desired TAP(s) leads to improvements in the way testing, emulation, and programming may be performed within an IC. A TAP linking module is described that allows TAPs embedded within an IC to be selectively accessed using 1149.1 instruction scan operations.

Abstract: A controller has an error correction capability by including: a state monitoring unit that analyzes a state of a monitoring target and outputs state information; an error correction processing unit that switches error correction codes so that a correction rate for the respective states becomes a value within a predetermined range; and a correction rate calculation unit that calculates the correction rate for the respective states based on the correction result by the error correction processing unit.

Abstract: A test circuit includes a control circuit that tests a memory having a plurality of data holding circuits holding data, a plurality of write ports, and a plurality of read ports, a write port selection circuit that selects any one of the plurality of write ports based on the write port identification information identifying any one of the plurality of write ports; and a read port selection circuit that selects any one of the plurality of read ports based on the read port identification information identifying any one of the plurality of read ports, wherein the control circuit sets the write port identification information and sets the read port identification information and carries out a test on the memory via the selected write port and the selected read port.

Abstract: Various embodiments of the invention allow to protect data in a logic circuit from being detected by commonly known observation methods. In certain embodiments, this is accomplished by selecting a set of reconfigurable logic blocks within the logic circuit to form a routing path in such a manner that the circuit performs a given function while making it virtually impossible to follow data through the circuit as the data is being processed. The routing path may be selected in a random or pseudorandom fashion, for example, in response to detecting an environmental change. In some embodiments, known data is injected into the logic path and the output is compared to a known value. If the result is incorrect, for example, because a section of the hardware ceased to properly perform due to a faulty circuit component, signals are routed through an operational part of the circuit to provide a different and valid logic path, while avoiding faulty logic gates.

Abstract: A system for test plural memories simultaneously includes a pattern generation part which generates a pattern signal for testing and transmits the signal to the memories, a delay part which receives data through a first data line from a first memory device that is disposed in a closest position from the delay part and a second data line from a second memory device that is disposed in a farthest position from the delay part, and a determination part which determines the result of testing by comparing the data from the first memory device and the second memory device. The delay part output the first data and the second data to the determination part simultaneously.

Abstract: Techniques and mechanisms to facilitate an operational mode of a memory device to prepare for a targeted refresh of a row in memory. In an embodiment, the memory device performs one or more operations while in the mode to prepare for a future command from a memory controller, the command to implement, at least in part, a targeted refresh of a row in a first bank of the memory device. Prior to such a command, the memory device services another command from the memory controller. In another embodiment, servicing the other command includes the memory device accessing a second bank of the memory device while the memory device operates in the mode, and before completion of an expected future targeted row refresh.

Abstract: A codeword is generated from a message. One or more anchor values are appended to the codeword at predetermined anchor positions. Before the codeword is stored in a memory block, the locations and values of stuck cells in the memory block are determined. Based on the values and positions of the stuck cells, the values of the codeword are remapped so that values of the codeword that are the same as the values of the stuck cells are placed at the positions of the stuck cells. The remapped codeword is stored in the memory block. When the message is later read, the original codeword can be recovered from the remapped codeword based on the locations of the anchor values in the remapped codeword.

Abstract: A method for producing a LDPC encoded test pattern for media in a LDPC based drive system includes adding error detection code data to a predominantly zero bit test pattern and adding additional zero bits to produce a test pattern of a desirable length. The test pattern may then be scrambled to produce a desirable flaw detection test pattern. The flaw detection test pattern may then be encoding with an LDPC code, or other error correction code with minimal disturbance to the run length constraints of the data pattern, and written to a storage medium.

Abstract: Disclosed is a storage tester capable of individual control for a plurality of storages, which comprises a host terminal for receiving user's control signal for storage test; a communication interface unit transmitting data among the host terminal, an embedded processor and a data engine unit; a data engine unit for generating pattern data and command data and reading the data from the storage; a sequence control module for controlling respectively a plurality of SATA/SAS/PCIe interface units; and SATA/SAS/PCIe interface unit for connecting to the storage through one among SATA, SAS, PCIe interface according to the signal for interface selection generated from the embedded processor and controlling a plurality of storages according to control of the sequence control module by the embedded processor in order to test respectively connected storage.

Abstract: A system for simultaneously determining a memory test result includes a pattern generation part generating a pattern signal for testing so as to transmit the signal through an address line and a command line; a delay part receiving read data through a first data line from a closest memory device that is disposed closer to the system and to receive read data through a second data line from a farthest memory device that is disposed farther from the system; and a determination part simultaneously determining the read data of the closest memory device and the read data of the farthest memory device, which are simultaneously output from the delay part, using a determination clock, wherein the delay part recognizes the read data of the closest memory device and the read data of the farthest memory device.

Abstract: A direct memory access controller for efficiently detecting a character string within memory, the direct memory access controller generating signatures of character strings stored within the memory and comparing the generated signatures with the signature of the character string for which detection is desired.

Abstract: The present invention is related to systems and methods for harmonizing testing and using a storage media. As an example, a data system is set forth that includes: a data decoder circuit, a data processing circuit, and a write circuit. The data decoder circuit is configured to decode a test data set to yield a result. The data processing circuit is configured to encode a user data set guided by the result to yield a codeword. The write circuit is configured to store an information set corresponding to the codeword to a storage medium.

Abstract: In a method of executing a BIST operation on IC memory arrays having a common BIST control unit, a first BIST sequence is initiated. Each address for the arrays is incremented. The BIST control unit receives a signal indicating a maximum valid address in the array is reached, receiving a plurality of maximum valid addresses, which are recorded. A single relatively highest maximum valid address is determined. A first mode, which prevents BIST testing, is engaged in each array having reached the maximum valid address. A second BIST sequence is initiated based on having received the signal indicating a maximum valid address is reached from all the arrays connected to the common BIST control unit. An address count is decremented from the single relatively highest maximum valid address. The first mode is disengaged for each array as the address count reaches each of the maximum valid addresses during the decrementing.

Abstract: Method for testing a memory under test (1) including a plurality of memory cells and a Memory Built-In Self-Test Engine (2) connectable to a memory under test. The MBIST engine (2) is arranged to generate appropriate addressing and read and/or write operations to the memory under test (1). The MBIST engine (2) is connected to a March Element Stress register (MESR) (3), a generic march element register (GMER) (4), and a Command Memory (5). The GMER (4) specifies one of a set of Generic March Elements (GME), and the MESR (3) specifies the stress conditions to be applied. Only a few GMEs are required in order to specify most industrial algorithms. The architecture is orthogonal and modular, and all speed related information is contained in the GME. In addition, only little memory is required for the specification of the test, providing a low implementation cost, yet with a high flexibility.

Abstract: Exemplary method, system, and computer program embodiments for performing deterministic data verification by a storage controller are provided. Each of a plurality of concurrent write tasks is configured to be placed in a plurality of overlapping data storage ranges by performing at least one of: implementing a data generation function for generating pseudo-random data using a data seed, and generating a range map, the range map utilized as a lookup data structure to verify a chronological order for performing the plurality of concurrent write tasks, wherein a data address space is first designated in the range map as undetermined. Each of a plurality of read tasks is analyzed by comparing data read from a sub range in the plurality of overlapping data storage ranges against the data seed associated with the sub range.

Abstract: Electronic apparatus, systems, and methods of operating and constructing the electronic apparatus and/or systems include an embedded processor disposed in a logic chip to direct, among other functions, self-testing of an electronic device structure in conjunction with a pattern buffer disposed in the logic chip, when the electronic device structure is coupled to the logic chip. Additional apparatus, systems, and methods are disclosed.

Abstract: A method includes receiving in a computing apparatus a model of an integrated circuit device including a memory array. The memory array is modeled as a plurality of device primitives. A test pattern analysis of the memory array is performed using the model in the computing apparatus. A system includes a memory array modeling unit and a test pattern analysis unit. The memory array modeling unit is operable to generate a model of an integrated circuit device including an memory array. The memory array is modeled as a plurality of device primitives. The test pattern analysis unit is operable to performing a test pattern analysis of the memory array using the model in the computing apparatus.