Abstract: In a method of executing a BIST operation on IC memory arrays having a common BIST control unit, a first BIST sequence is initiated. Each address for the arrays is incremented. The BIST control unit receives a signal indicating a maximum valid address in the array is reached, receiving a plurality of maximum valid addresses, which are recorded. A single relatively highest maximum valid address is determined. A first mode, which prevents BIST testing, is engaged in each array having reached the maximum valid address. A second BIST sequence is initiated based on having received the signal indicating a maximum valid address is reached from all the arrays connected to the common BIST control unit. An address count is decremented from the single relatively highest maximum valid address. The first mode is disengaged for each array as the address count reaches each of the maximum valid addresses during the decrementing.

Abstract: An apparatus, system, and method are disclosed for testing physical regions in a solid-state storage device. The method includes defining a physical storage region on solid-state storage media of a solid-state storage device. The physical storage region includes a subset of storage capacity of the solid-state storage media. The method includes implementing the physical storage region definition on a storage controller such that memory operations are bounded to the physical storage region. The method includes testing wear of solid-state storage media associated with the physical storage region using memory operations bounded to the physical storage region.

Abstract: An area of a memory has a diagnosis area and a non diagnosis area, with the diagnosis area divided into a plurality of Row areas which do not overlap each other, and each of the Row areas is divided into a plurality of Cell areas which do not overlap each other. A memory fault diagnostic method has a diagnostic step in a Row area to diagnose between Cell areas with respect to all the combinations of a set of Cell areas in the Row area, and a diagnostic step between Row areas to diagnose between Row areas with respect to all the combinations of a set of Row areas in the diagnosis area. A Row area size is determined to be a size in which a time of the diagnosis in a Row area becomes equal to a time of the diagnosis between Row areas.

Abstract: A repetitive bit value pattern associated to a predetermined bit position of a sequence of data words, the data words having two or more bits in a bit order, a bit position describing a position within the bit order being indicative of a value represented by the bit at the bit position, can be determined from program loop information, the program loop information having a program expression for determining an updated data word of the sequence of data words. Using the predetermined bit position, a sequence length value associated to the predetermined bit position is determined. The program expression is evaluated for a number of loop iterations indicated by the sequence length value, to obtain updated bit values associated to the predetermined bit position. The repetitive bit value pattern is determined using the updated bit values of the number of loop iterations.

Abstract: A method and apparatus for multi-site testing of computer memory devices. An embodiment of a method of testing computer memory devices includes coupling multiple memory devices, each memory device having a serializer output and a deserializer input, wherein the serializer output of a first memory device is coupled with a deserializer input of one or more of the memory devices of the plurality of memory devices. The method further includes producing test signal patterns using a test generator of each memory device, serializing the test signal pattern at each memory device, and transmitting the serialized test pattern for testing of the memory devices, wherein testing of the memory devices includes a first test mode and a second test mode.

Abstract: A Flash memory system and a method for data management using the system's sensitivity to charge-disturbing operations and the history of charge-disturbing operations executed by the system are described. In an embodiment of the invention, the sensitivity to charge-disturbing operations is embodied in a disturb-strength matrix in which selected operations have an associated numerical value that is an estimate of the relative strength of that operation to cause disturbances in charge that result in data errors. The disturb-strength matrix should also include the direction of the error which indicates either a gain or loss of charge. The disturb-strength matrix can be determined by the device conducting a self-test in which changes in the measured dispersion value are provoked by executing a selected operation until a detectable change occurs. In alternative embodiments the disturb-strength matrix is determined by testing selected units from a homogeneous population.

Abstract: A method for data storage in a memory including multiple memory cells arranged in blocks, includes storing first and second pages in respective first and second groups of the memory cells within a given block of the memory. A pattern of respective positions of one or more defective memory cells is identified in the first group. The second page is recovered by applying the pattern identified in the first group to the second group of the memory cells.

Abstract: Electronic apparatus, systems, and methods of operating and constructing the electronic apparatus and/or systems include an embedded processor disposed in a logic chip to direct, among other functions, self-testing of an electronic device structure in conjunction with a pattern buffer disposed in the logic chip, when the electronic device structure is coupled to the logic chip. Additional apparatus, systems, and methods are disclosed.

Abstract: A method for allocating storage memory space is provided. The method involves receiving a request for storage memory allocation for a file of a current size; estimating a future size of the file, different than the current size of the file, based at least on a particular attribute associated with the file; and causing allocation of storage memory space for storage of the file based on the future size of the file.

Abstract: A method includes temporarily storing write-data to be written into non-volatile memory cells, respectively, the memory cells being divided into cell groups, performing a first operation including write-phases performed in series and on an associated cell group and including applying a write-voltage to the memory cells belonging to the associated cell group in response to an associated write-data to be written into the memory cells belonging to the cell groups, and performing a second operation after the first operation is completed, which includes read-phases performed in series and on an associated cell group and including applying a first read-voltage to the memory cell or cells belonging to the associated one of the cell groups to produce first read-data therefrom, and comparing the first read-data with the write-data to be written into the memory cells belonging to the associated cell groups to produce comparison data.

Abstract: Exemplary method, system, and computer program embodiments for performing deterministic data verification by a storage controller are provided. Each of a plurality of concurrent write tasks is configured to be placed in a plurality of overlapping data storage ranges by performing at least one of: implementing a data generation function for generating pseudo-random data using a data seed, and generating a range map, the range map utilized as a lookup data structure to verify a chronological order for performing the plurality of concurrent write tasks, wherein a data address space is first designated in the range map as undetermined. Each of a plurality of read tasks is analyzed by comparing data read from a sub range in the plurality of overlapping data storage ranges against the data seed associated with the sub range.

Abstract: A pseudo random bit stream generator is disclosed which has a fully programmable pseudo random polynomial up to the supported width of the CSRs, fully programmable tap selection for providing any specified combination of generator state taps, and fully programmable parallel sequence generation which determines the number of sequential bits calculated and how much the sequence generator advances per clock.

Abstract: According to one embodiment, a semiconductor memory device includes semiconductor memory chips having writable storage regions in which data is written. The data has one or more pieces of first data, and one or more pieces of the first data includes second data. The device includes a determining unit that determines a prescribed number or fewer of semiconductor memory chips to which the first data is written; a write controller that writes the the first data and redundant information calculated from the second data and used for correcting an error in the second data into the writable storage regions in the determined semiconductor memory chips; and a storage unit that stores identification information and region specifying information associated with each other.

Abstract: A scan asynchronous memory element includes: an asynchronous memory element configured to receive an n-input; and a scan control logic circuit configured to generate an n-bit signal input and the n-input to the asynchronous memory element from a scan input. The scan control logic circuit outputs the signal input when a control signal supplied to the scan control logic circuit has a first bit pattern, the scan control logic circuit outputs the scan input when the control signal has a second bit pattern, and the scan control logic circuit outputs a bit pattern allowing the asynchronous memory element to hold a previous value when the control signal has a bit pattern other than the first and second bit patterns.

Abstract: Searching for patterns stored on a hardware storage device. A method includes, as part of a memory refresh operation, performing a read to read contents of a portion of a memory. The method further includes writing the read contents of the portion of memory back to the portion of memory. The read contents are provided to data comparison logic. Using the data comparison logic; the read contents are compared to predetermined data patterns. A determination is made as to whether or not the contents match at least one of the predetermined data patterns. When the read contents match at least one of the predetermined data patterns, a software readable indicator is provided indicating that the read contents match at least one of the predetermined data patterns. Similar embodiments may be implemented using hard drive head wear leveling operations.

Abstract: A one time programming (OTP) memory array is divided into a user section and a test section. The cells in the user section and in the test section are configured to form a checkerboard pattern, that is, having repeats of one user cell and one test cell in both column and row directions. Programming the test section and various additional tests are performed to both the user and test sections and other circuitry of the memory array while the user section is not programmed. Even though the OTP user section is not programmed or tested, the provided tests in accordance with embodiments of the invention can provide a very high probability that the OTP memory including the user section is of high quality, i.e., the OTP cells in the user section can be programmed and function appropriately.

Abstract: A pseudo random bit stream generator is disclosed which has a fully programmable pseudo random polynomial up to the supported width of the CSRs, fully programmable tap selection for providing any specified combination of generator state taps, and fully programmable parallel sequence generation which determines the number of sequential bits calculated and how much the sequence generator advances per clock.

Abstract: Mechanisms for controlling an operation of one or more cores on an integrated circuit chip are provided. The mechanisms retrieve, from an on-chip non-volatile memory of the integrated circuit chip, baseline chip characteristics data representing operational characteristics of the one or more cores prior to the integrated circuit chip being operational in the data processing system. Current operational characteristics data of the one or more cores are compared with the baseline chip characteristics data. Deviations of the current operational characteristics data from the baseline chip characteristics data are determined and used to determine modifications to an operation of the one or more cores. Control signals are sent to one or more on-chip management units based on the determined modifications to cause the operation of the one or more cores to be modified.

Abstract: A memory device and method, such as a flash memory device and method, includes a memory having a plurality of nonvolatile memory cells for storing stored values of user data. The memory device and method includes a memory controller for controlling the memory. The memory controller includes an encoder for encoding user write data for storage of code values as the stored values in the memory. The encoder includes an inserter for insertion of an indicator as part of the stored values for use in determining when the stored values are or are not in an erased state. The memory controller includes a decoder for reading the stored values from the memory to form user read data values when the stored values are not in the erased state.

Abstract: A method is for testing a non-volatile memory. A base data pattern is defined for a first pageset of the non-volatile memory. The non-volatile memory has a plurality of pages which comprise words. The base pattern is arranged so that each bitpair of a plurality of bitpairs that includes one of a group consisting of even bitpairs and odd bitpairs formed from all of the words exhibits all possible bitpair transitions during sequential accesses of the pages of the plurality of pages. The base pattern is stored in the first pageset. The pages of the plurality of pages of the first pageset are accessed sequentially.

Abstract: A method for testing a primary memory of control and regulation electronics of a frequency converter is described. The primary memory includes (i) at least one matrix of memory cells, (ii) means for addressing the at least one memory cell matrix, and (iii) a write/read circuit The method includes examining at least a part of the means for addressing with regard to address errors and examining at least a part of the memory cells with regard to cell errors. The examining steps are performed independently of one another. The examining at least a part of the means for addressing includes examining individual address bits of an n-bit wide address bus in steps that are performed independently of one another. The examining is dependent on use of the primary memory for operation of the frequency converter.

Abstract: An ECC circuit and method for an integrated circuit memory allows a user to enter a test mode and select a specific location to force a known failure on any memory chip, whether it is fully functional or partially functional. Additional circuitry is placed in the data path where existing buffers and drivers are already located, minimizing any additional speed loss or area penalty required to implement the forced data failure. In a first general method, a logic zero is forced onto a selected data line at a given time. In a second general method, a logic one is forced onto a selected data line at a given time.

Abstract: An apparatus having a memory module and an initialization module is disclosed. The initialization module may be configured to (i) mark a particular location in the memory module as an uninitialized location by writing a predetermined word into the particular location in response to an occurrence of an event, (ii) read a read word from an address in the memory module in response to a read cycle and (iii) generate an interrupt signal by analyzing the read word, the interrupt signal being asserted where the read word indicates that the address is the uninitialized location in the memory module.

Abstract: A method for testing data, has writing, in a first area of the test-target area, a test pattern, transferring, to a second area of the test-target area, the test pattern that has been written in the first area, transferring, to the first area, the test pattern that has been transferred to the second area, using as a transfer start address an address that is shifted by a predetermined amount, and inspecting whether or not the data is correctly written in and read from the test-target area by comparing the base patterns disposed next to each other in the base-pattern pair included in the test pattern that has been transferred from one of the first area and the second area to the other of the first area and the second area and by determining whether or not the base patterns disposed next to each other are identical to one another.

Abstract: Testing system capable of detecting different kinds of memory faults of a memory under I/O compression includes a data pattern selection circuit, writing pattern selection units, reading pattern selection units, and a data comparison circuit. The data pattern selection circuit converts a testing data into different data patterns by the writing pattern selection units and accordingly writes to the corresponding memory data ends in order to allow the corresponding memory cells to store the data with the corresponding data pattern. The data comparison circuit executes reverse-converting through the reading pattern selection units for comparing if the data stored in the memory cells corresponding to each memory data end are matched and accordingly determines if a failure memory cell exists in the memory.

Abstract: Real-time statistical analysis is used to perform autonomic self-healing within the context of a 3-tier regression system for analysis of a computer system design component. Throughout the system, there are mechanisms for implementing self-healing if breakage is detected. The regression layer with the highest throughput is maintained in a much cleaner state than otherwise, thereby creating a more efficient environment for identifying and removing defects in the design.

Abstract: Utilize a pattern generator to write a predetermined logic voltage to each memory cell of a memory chip. Read a predetermined logic voltage stored in the memory cell. Compare the predetermined logic voltage stored in the memory cell with the predetermined logic voltage to determine if the memory cell is a good memory cell or not and store a determination result corresponding to the memory cell in a data latch of the memory chip. And determine if the memory chip is a good memory chip or not according to determination results of all memory cells of the memory chip stored in the data latch of the memory chip.

Abstract: A one-hot data generating unit generates one-hot data for the maximum data bit width in which a state of one bit is exclusively inverted with respect to states of other bits while sequentially shifting a bit position to be inverted, and writes the one-hot data in an area of a memory designated by an address. A short defect between wirings connected to the memory is detected by comparing the one-hot data written in the memory with the one-hot data before being written.

Abstract: Electronic apparatus, systems, and methods of operating and constructing the electronic apparatus and/or systems include an embedded processor disposed in a logic chip to direct, among other functions, self-testing of an electronic device structure in conjunction with a pattern buffer disposed in the logic chip, when the electronic device structure is coupled to the logic chip. Additional apparatus, systems, and methods are disclosed.

Abstract: A method, apparatus, and system for dynamic adjustment of an error control coding (ECC) code rate are disclosed. In one embodiment, a code rate may be changed from a first code rate to a second code rate in response to a change in a bit error rate.

Abstract: An integrated circuit configured for at-speed scan testing of memory arrays. The integrated circuit includes a scan chain having a plurality of serially coupled scan elements, wherein a subset of the plurality of scan elements are coupled to provide signals to a memory array. Each scan element of the subset of the plurality of scan elements includes a flip flop having a data input, and a data output coupled to a corresponding input of the memory array, and selection circuitry configured to, in an operational mode, couple a data path to the data input, and further configured to, in a scan mode, couple to the data input one of a scan input, the data output, and a complement of the data output. The scan elements of the subset support at-speed testing of a memory array coupled thereto.

Abstract: A test and measurement instrument includes a pattern detector for detecting a beginning sequence in a signal under test (SUT), and generates a synchronization signal. In response to the synchronization signal, a memory outputs a reference test pattern. A symbol comparator compares the reference test pattern with the SUT. The symbol comparator can produce a symbol error rate. One or more 8b to 10b converters receives the SUT from the input and the digitized data from the memory, and converts the data from an 8b coded format to a 10b coded format. A bit comparator compares the 10b coded reference test pattern with the 10b coded SUT in response to the symbol comparator. The bit comparator is coupled to a bit error counter, which produces a bit error rate independent of any disparity errors that may be present in the incoming digitized data received by the test and measurement instrument.

Abstract: A semiconductor memory device including: a memory cell array including a plurality of word lines, a plurality of bit lines, and memory cells arranged in portions where the plurality of word lines and the plurality of bit lines intersect with each other; a plurality of data bus lines connected to the plurality of bit lines; a plurality of sense amplifiers individually connected to the plurality of data bus lines and configured for detecting memory data stored in corresponding memory cells based on values of currents that are generated in the individual data bus lines in accordance with the memory data.

Abstract: Searching for patterns stored on a hardware storage device. A method includes, as part of a memory refresh operation, performing a read to read contents of a portion of a memory. The method further includes writing the read contents of the portion of memory back to the portion of memory. The read contents are provided to data comparison logic. Using the data comparison logic; the read contents are compared to predetermined data patterns. A determination is made as to whether or not the contents match at least one of the predetermined data patterns. When the read contents match at least one of the predetermined data patterns, a software readable indicator is provided indicating that the read contents match at least one of the predetermined data patterns. Similar embodiments may be implemented using hard drive head wear leveling operations.

Abstract: One embodiment provides a runtime programmable system which comprises methods and apparatuses for testing a multi-port memory device to detect a multi-port memory fault, in addition to typical single-port memory faults that can be activated when accessing a single port of a memory device. More specifically, the system comprises a number of mechanisms which can be configured to activate and detect any realistic fault which affects the memory device when two simultaneous memory access operations are performed. During operation, the system can receive an instruction sequence, which implements a new test procedure for testing the memory device, while the memory device is being tested. Furthermore, the system can implement a built-in self-test (BIST) solution for testing any multi-port memory device, and can generate tests targeted to a specific memory design based in part on information from the instruction sequence.

Abstract: A semiconductor memory device including a plurality of banks, each including a plurality of memory cells, a pattern signal generator configured to generate pattern signals having combinations in response to an input signal applied through an arbitrary pad in a compression test mode. Input paths are configured to transfer the plurality of pattern signals to the corresponding banks.

Abstract: Disclosed is a control method of a non-volatile semiconductor device including cells, wherein a stress for rewriting information is applied to each of the cells, and each cell has a first time period as a period of time until a characteristic of the cell is stabilized to expectation value information after the stress for rewriting information is applied, a plurality of first sequences, in each of which writing is performed to a plurality of the cells continuously in time series, and a plurality of second sequences, in each of which verification of a plurality of the cells is performed continuously in time series, after the writing performed continuous in time series.

Abstract: An apparatus having a memory module and an initialization module is disclosed. The initialization module may be configured to (i) mark a particular location in the memory module as an uninitialized location by writing a predetermined word into the particular location in response to an occurrence of an event, (ii) read a read word from an address in the memory module in response to a read cycle and (iii) generate an interrupt signal by analyzing the read word, the interrupt signal being asserted where the read word indicates that the address is the uninitialized location in the memory module.

Abstract: A system and method for replicating a memory block throughout a main memory and modifying real addresses within an address translation buffer to reference the replicated memory blocks during test case set re-executions in order to fully test the main memory is presented. A test case generator generates a test case set (multiple test cases) along with an initial address translation buffer that includes real addresses that reference an initial memory block. A test case executor modifies the real addresses after each test case set re-execution in order for a processor to test each replicated memory block included in the main memory.

Abstract: A method for detecting disturb phenomena between neighboring blocks in non-volatile memory includes, sequentially erasing and writing test data (pattern) to each block of a plurality of blocks under test in the non-volatile memory at a first time point, dividing the plurality of blocks under test into a first block group and a second block group based on ordinal number included in each block of the plurality of blocks under test, reading data from each block of the first block group at a second time point, and comparing the data with the test data written at the first time point to generate a first detecting result, and determining applicability of each block of the first block group based on the first detecting result.

Abstract: A method for testing a random-access memory (RAM) includes six tests. The first test is performed by performing a write and read test to storage locations of the RAM. The second test is performed by testing walking 1's across each data bus of the RAM. The third test is performed by testing walking 0's across the data bus of the RAM. The fourth test is performed by testing walking 1's across each address bus of the RAM. The fifth test is performed by testing walking 0's across the address bus bit of the RAM. The sixth test is performed by performing a write and read test to random blocks in the storage locations of the RAM.

Abstract: Provided is a test module that tests a device under test, comprising a pattern generating section that generates a test pattern supplied to the device under test and an expected value pattern corresponding to the test pattern, based on a pattern program; an output pattern acquiring section that acquires an output pattern output by the device under test in response to the test pattern; a comparing section that compares the output pattern output and the expected value pattern; a fail counter that counts the number of times the comparing section indicates a mismatch between the output pattern and the expected value pattern; and a control section that controls operation of the fail counter according to control instructions in the pattern program.

Abstract: A system and method for defect analysis of multi-level memory cell devices and embedded multi-level memory in system-on-chip integrated circuits are disclosed wherein a defect data set is input into the system. When a defect data set is received, an automated test engineering system running a memory test program analyzes the defect data set to generate one or more fail bit locations and one or more fail states of the memory. The multi-level memory defect analysis system and method then classify failed bits or patterns comprising a vertical fail pattern, whereby after being classified, each memory cell failure vertical fail pattern has three data attributes comprising fail type, a number of fail bits/states, and a sequence of the fail states. The vertical fail pattern may comprise a single fail state or multi-state fail. The multi-state fail may be a continuous-states fail, discontinuous-states fail, or all-state fail.

Abstract: Test entry circuit and method for generating test entry signal including a first source signal generator configured to receive a test signal through a pad to generate a first mode source signal for a first test mode, a second source signal generator configured to count activation transitions of the test signal to generate a second mode source signal for a second test mode and an entry signal generator configured to receive the first and second mode source signals to generate a first test mode entry signal for entering the first test mode and a second test mode entry signal for entering the second test mode.

Abstract: A memory collar includes a first circuit, a second circuit and a third circuit. The first circuit may be configured to generate a first control signal, a second control signal and a third control signal in response to one or more test commands. The second circuit may be configured to generate a fourth control signal in response to said third control signal and the fourth control signal. The third circuit may be configured to generate one or more address sequences. The one or more address sequences are presented to a memory during a test mode.

Abstract: A method for testing a storage apparatus, which includes: (a) writing a specific pattern to a storage unit of a storage apparatus; (b) reading the specific pattern written to the storage apparatus; (c) determining an error bit number of the specific pattern read in the step (b); and (d) determining that the storage unit has defect when the error bit number is larger than a error bit threshold value, wherein the error bit threshold value is smaller than a correctable bit number for a error correction code corresponding to the specific pattern.

Abstract: A method for implementing at speed bit fail mapping of an embedded memory system having ABIST (Array Built In Self Testing), comprises using a high speed multiplied clock which is a multiple of an external clock of an external tester to sequence ABIST bit fail testing of the embedded memory system. Collect store fail data during ABIST testing of the embedded memory system. Perform a predetermined number of ABIST runs before issuing a bypass order substituting the external clock for the high speed multiplied clock. Use the external clock of the tester to read bit fail data out to the external tester.

Abstract: Electronic apparatus, systems, and methods of operating and constructing the electronic apparatus and/or systems include an embedded processor disposed in a logic chip to direct, among other functions, self-testing of an electronic device structure in conjunction with a pattern buffer disposed in the logic chip, when the electronic device structure is coupled to the logic chip. Additional apparatus, systems, and methods are disclosed.

Abstract: The present invention is to provide a test signal generating apparatus which can generate a test signal for testing a device that dynamically change its operational state in response to a signal or the like. The test signal generating apparatus includes: a pattern storage unit 20 having patterns; a pattern selecting unit 23 for selecting a pattern from among the patterns; a test signal generating unit 25 for generating a test signal having a pattern selected by the pattern selecting unit 23, a trigger signal receiving unit 21 for receiving at least one trigger signal, and a pattern map storage unit 22 having a pattern map defining the number of repetitions for each pattern and a pattern corresponding to a test signal to be generated by the test signal generating unit after the test signal generating unit repeats the test signal on the basis of the number of repetitions.

Abstract: A data inversion register technique for integrated circuit memory testing in which data input signals are selectively inverted in a predetermined pattern to maximize the probability of identifying failures during testing. In accordance with the technique of the present invention, on predetermined input/outputs (I/Os,) data inputs may be inverted to create a desired test pattern (such as data stripes) which are “worst case” for I/O circuitry or column stripes which are “worst case” for memory arrays. A circuit in accordance with the technique of the present invention then matches the pattern for the data out path, inverting the appropriate data outputs to obtain the expected tester data. In this way, the test mode is transparent to any memory tester.