Abstract: The present disclosure relates to an active x-ray attack prevention structure for secure integrated circuits. In particular, the present disclosure relates to a structure including a functional circuit, and at least one latchup sensitive diode circuit configured to induce a latchup condition in the functional circuit, placed in proximity of the functional circuit.

Abstract: A memory system includes a non-volatile memory and a memory controller. During a read operation to read data stored in the non-volatile memory as an N-dimensional error correction code, where N is two or more, the memory controller performs an error correction process on the N-dimensional error correction code iteratively, the error correction process including a first decoding process on a first decoding input to produce a first decoding output and a second decoding process on a second decoding input to produce a second decoding output. During the error correction process, upon determining that errors remaining in the second decoding output after a most recent iteration would not be correctable, the memory controller performs a next iteration using a first decoding input for the next iteration, which is a modified form of the second decoding output of the most recent iteration.

Abstract: Memories including a controller configured to cause the memory to read a plurality of memory cells using a read voltage having a particular voltage level, determine a number of memory cells of a first subset of memory cells of the plurality of memory cells having a particular data state in response to the read voltage having the particular voltage level, and in response to determining that the number of memory cells of the first subset of memory cells having the particular data state is less than a particular threshold, adjust the voltage level of the read voltage based on the number of memory cells of the first subset of memory cells having the particular data state, and re-read the plurality of memory cells using the read voltage having the adjusted voltage level.

Abstract: A memory device includes a plurality of pages. Each page includes a data region configured to store data, an error correction code (ECC) region configured to store ECC data that is used to detect and correct one or more errors occurring in the data stored in the data region, and a metadata region configured to store a write count of a corresponding page.

Abstract: Systems and methods are provided for decoding a codeword encoded by a linear block code. A method may comprise performing a hard decision decoding on a codeword, determining which check nodes are satisfied and which check nodes are unsatisfied after the hard decision decoding, scheduling a check node processing order by moving at least one unsatisfied check node to be processed ahead of at least one satisfied check node and performing a soft decision decoding on the codeword according to the check node processing order.

Abstract: Devices and techniques are disclosed herein to control recovery of a memory device from a reduced power state. A memory controller can include a detection circuit configured to monitor the power supply voltage to an array of memory cells during the reduced power state. Control circuitry an initialization procedure for recovery of the memory device from the reduced power state, based on the state of the detection circuit.

Abstract: Protecting in-memory configuration state registers. A request to access an in-memory configuration state register, such as a read or write request, is obtained. The in-memory configuration state register is mapped to memory. Error correction code of the memory is used to protect the access to the in-memory configuration state register.

Abstract: A semiconductor memory device includes an ECC circuit; an error information register; a scrubbing control circuit to count refresh row addresses and output a scrubbing address for a scrubbing operation to be performed on at least one sub-page in a first memory cell row each time N refresh row addresses are counted; and a control logic circuit configured to: control the ECC circuit to sequentially read data corresponding to a first codeword, perform error detection on the first codeword, and provide error information based on the error detection, the error information indicating an error occurrence count in the first codeword; and record the error information in the error information register and selectively determine, based on the error information, whether to write back a corrected first codeword in a memory location in which the data corresponding to the first codeword is stored.

Abstract: A data storage device includes a memory device and a memory controller. The memory device includes multiple memory blocks. The memory blocks include multiple table blocks configured to store tables and multiple data blocks configured to store data. The memory controller is configured to receive a predefined command which is a command from a host device to instruct the memory controller to perform initialization of the data storage device. The initialization of the data storage device includes a plurality of processing procedures which include a first portion of processing procedures and a second portion of processing procedures. The memory controller is configured to perform the first portion of processing procedures in response to the predefined command. After the first portion of processing procedures has been finished, the memory controller is configured to notify the host device that the data storage device is ready.

Abstract: Application data and error correction code (ECC) checkbits associated with that application data are stored in a first memory. The ECC checkbits, but not the application data, are stored in a second memory. In response to a request to read the application data from the first memory, the ECC checkbits from the first memory are also read and used to detect, and possibly correct, errors in the read application data. The ECC checkbits are further output from both the first and second memories for bit-by-bit comparison. In response to a failure of the bit-by-bit comparison, a signal indicating possible malfunction of one or the other or both of the first and second memories is generated.

Abstract: Examples described herein relate generally to content aware bit flipping decoders. An example device includes a decoder. The decoder is configured to: process one or more flip thresholds based on statistics of data to be decoded; and perform a bit flipping algorithm on the data using the one or more processed flip thresholds. Other examples relate to methods of processing one or more flip thresholds based on statistics of data to be decoded and performing a bit flipping algorithm on the data using the one or more processed flip thresholds.

Abstract: A method of processing data in a memory can include accessing an array of memory cells located on a semiconductor memory die to provide a row of data including n bits, latching the n bits in one or more row buffer circuits adjacent to the array of memory cells on the semiconductor memory die to provide latched n bits operatively coupled to a column address selection circuit on the semiconductor memory die to provide a portion of the n latched bits as data output from the semiconductor memory die responsive to a memory read operation, and serially transferring the latched n bits in the row buffer circuit to an arithmetic logic unit (ALU) circuit located adjacent to the row buffer circuit on the semiconductor memory die.

Abstract: An encoding method includes: receiving, by an encoder, an information for encoding; generating, by the encoder, a first portion codeword according to a first encoding rule and the information for encoding, wherein the first encoding rule is an encoding rule configured to generate LDPC code; generating, by the encoder, a second portion codeword according to a second encoding rule different from the first encoding rule and a double check region of the first portion codeword; and concatenating, by the encoder, the first portion codeword and the second portion codeword to generate a codeword. A plurality of trapping sets corresponding to the first encoding rule include at least one error bit within the double check region.

Abstract: An apparatus includes an error correction component coupled to read recovery control circuitry. The error correction component can be configured to perform one or more initial error correction operations on codewords contained within a managed unit received thereto. The read recovery control circuitry can be configured to receive the error corrected codewords from the error correction component and determine whether codewords among the error corrected codewords contain an uncorrectable error. The read recovery control circuitry can be further configured to determine that a redundant array of independent disks (RAID) codeword included in the plurality of error corrected codewords contains the uncorrectable error, request that codewords among the error corrected codewords that contain the uncorrectable error are rewritten in response to the determination, and cause the plurality of error corrected codewords to be transferred to a host coupleable to the read recovery control circuitry.

Abstract: A method includes registering, by a first computing device, with a distributed storage network (DSN) to indicate that a first storage site is connected via a common local area network with the first computing device and is the primary storage site for the first computing device. The method continues with the first computing device to store a write threshold number of encoded data slices (EDSs) to the first storage site, obtaining a first writing pattern for writing the write threshold number of EDSs to the first plurality of storage units, and transmitting at least a portion of a remaining number of EDSs to one or more storage units at a second storage site, where the remaining number of EDSs are EDSs not included in the write threshold number of EDSs and the second storage site and the first storage site are each one of a sharing group of storage sites.

Abstract: Provided herein may be a memory system and a method of operating the memory system. The memory system may include: a semiconductor memory device including a plurality of memory cells to be programmed to an erase state and a plurality of program state; and a controller configured to control the semiconductor memory device to perform a program operation or a read operation in response to a request of a host. The controller may control the semiconductor memory device such that when, after a first program operation of the program operation has been performed, a number of program fail bits of the plurality of memory cells is greater than a maximum allowed number of ECC bits, a second program operation is performed on selected memory cells of the plurality of memory cells.

Abstract: An apparatus and method are described for implementing a hybrid layer of address mapping for an IOMMU implementation.

Abstract: Aspects of the present disclosure relate to techniques for identifying susceptibility to induced charge leakage. In examples, a susceptibility test sequence comprising a cache line flush instruction is used to repeatedly activate a row of a memory unit. The susceptibility test sequence causes induced charge leakage within rows that are physically adjacent to the activated row, such that a physical adjacency map can be generated. In other examples, a physical adjacency map is used to identify a set of adjacent rows to a target row. A susceptibility test sequence is used to repeatedly activate the set of adjacent rows, after which the content of the target row is analyzed to determine whether the any bits of the target row flipped as a result of induced charge leakage. If flipped bits are not identified, an indication is generated that the memory unit is not susceptible to induced charge leakage.

Abstract: Disclosed are techniques for managing parity information for data stored on a storage device. A method can be implemented at a computing device communicably coupled to the storage device, and include (1) receiving a request to write data into a data band of the storage device, (2) writing the data into stripes of the data band, comprising, for each stripe of the data band: (i) calculating first parity information for the data written into the stripe, (ii) writing the first parity information into a volatile memory, and (iii) in response to determining that a threshold number of stripes have been written: converting the first parity information into smaller second parity information, and (3) in response to determining that the data band is read-verified: (i) converting the second parity information into smaller third parity information, and (ii) storing the smaller third parity information into a parity band of the storage device.

Abstract: A method begins by obtaining, for a set of data access requests to a set of storage units of a dispersed storage network, a storage-revision indicator from each of at least some storage units of the set of storage units, where the set of data access requests is regarding a data access transaction involving a set of encoded data slices. The method continues by generating an anticipated storage-revision indicator for the data access transaction based on a current revision level of the set of encoded data slices and a data access type of the data access transaction. The method continues by comparing the anticipated storage-revision indicator with the storage-revision indicators received from the at least some storage units. When a threshold number of the storage-revision indicators received from the at least some storage units substantially match the anticipated storage-revision indicator, the method continues by executing the data access transaction.

Abstract: In general, according to an embodiment, a memory system includes a memory device including a memory cell; and a controller. The controller is configured to: receive first data from the memory cell in a first data reading; receive second data from the memory cell in a second data reading that is different from the first data reading; convert a first value that is based on the first data and the second data, to a second value in accordance with a first relationship; and convert the first value to a third value in accordance with a second relationship that is different from the first relationship.

Abstract: Various methods, computer storage media, and systems for implementing hierarchical data integrity verification, in distributed computing systems, are provided. A data manager operates to perform hierarchical data integrity verification operations on message-digests that are associated based on a linear property of a non-cryptographic function, such that a data integrity of source data is verifiable based on the message-digests combined based on an exclusive-or (XOR) operator. The data manager accesses data fragments that are erasure coded fragments and a parity fragment generated from the data fragments, which correspond to source data. The data manager generates and stores the data-fragment message-digests, data-parity message-digests, and parity-fragment message-digests in corresponding data fragment zones and parity fragment zones.

Abstract: An error correcting circuit receives a codeword including user data and a parity code, and performs an error correction operation on the user data. The circuit includes a first buffer, a decoder, a second buffer and a processor. The first buffer stores the codeword and sequentially outputs pieces of subgroup data obtained by dividing the codeword. The decoder generates pieces of integrity data for each of the pieces of subgroup data received from the first buffer, and performs the error correction operation on the user data using the parity code. The second buffer sequentially stores the pieces of integrity data for each of the pieces of subgroup data. The processor determines whether an error is present in the codeword based on the pieces of integrity data stored in the second buffer when at least one of the pieces of integrity data is updated in the second buffer.

Abstract: Described are fountain code constructs that solve multiple problems in distributed storage systems by providing systematic encoding, reduced repair locality, reduced encoding/decoding complexity, and enhanced reliability. Embodiments are suitable for the storage of large files and exhibit performance superior to existing codes, and demonstrate reduced implementation complexity and enhanced symbol repair locality.

Abstract: One or more blocks from a pool of storage area blocks of the memory component are allocated to a first set of purposed blocks. First write operations are performed to write first data to first data stripes at user blocks of the memory component. Whether the blocks in the first set of purposed blocks satisfy a condition indicating that the first set of purposed blocks are to be retired is determined. Responsive to the blocks in the first set of purposed blocks satisfying the condition, one or more other blocks from the pool of storage area blocks of the memory component are allocated to a second set of purposed blocks. Second write operations are performed to write second data to second data stripes at the user blocks of the memory component.

Abstract: Enhanced error correction for data stored in storage devices are presented herein. An error correction circuit decodes an encoded data segment retrieved from a storage media. This decode uses a selected error correction scheme having an error correction limit. The error correction circuit tracks a number of bit corrections made to the encoded data segment during decode. A detection circuit sends a redundant version of the encoded data segment to the error correction circuit in response to the number of bit corrections satisfying a threshold limit set below the error correction limit to mitigate undetected errors in decoding the encoded data segment. An output circuit can transfer resultant data decoded by the error correction circuit to other systems, such as a host device.

Abstract: A heterogeneous memory system is implemented using a low-latency near memory (NM) and a high-latency far memory (FM). Pages in the memory system include NM blocks stored in the NM and FM blocks stored in the FM. A page is assigned to a region in the memory system based on the proportion of NM blocks in the page. When accessing a block, the block address is used to determine a region of the memory system, and a block offset is used to determine whether the block is stored in NM or FM. The memory system may observe memory accesses to determine the access statistics of the page and the block. Based on a page's hotness and access density, the page may be migrated to a different region. Based on a block's hotness, the block may be migrated between NM and FM allocated to the page.

Abstract: A memory system is disclosed, including a memory component and a processing device configured to decode one or more codewords saved to a memory region of the memory component, detect that a number of bit errors corresponding to the decoding of the codeword exceeds a correction capability of the processing device, and execute an error recovery routine to reduce the number of detected bit errors to within the correction capability. The error recovery routine can include error recovery operations that are sequentially executed either until the number of bit errors is successfully reduced to within the correction capability or until a set of the error recovery operations has been executed. The error recovery operations can be ordered according to one or more factors, including energy used to execute a respective error recovery operation, a duration of the respective operation, and/or a likelihood of success of the respective operation.

Abstract: An apparatus includes a binary content addressable memory (BCAM) to store a plurality of error protection code (ECC) generated codewords (CWs), the BCAM divided into segments (sub-BCAMs), wherein the sub-BCAMs are to respectively store pre-defined first portions of the CWs, and to store corresponding second portions of a search word. In embodiments, the apparatus further includes logic circuitry, to obtain partial match results between the first portions of the CWs and corresponding second portions of the search word, and identify one or more CWs of the plurality of CWs that match the search word, based at least in part on the partial match results, wherein the match indicates that data included in the one or more CW is the same as the data included in the search word.

Abstract: A contactless communication device includes a near field communication (NFC) module for generating an electromagnetic carrier signal and modulating the carrier signal according to data to be transmitted, and an antenna circuit coupled to and driven by said NFC module with the modulated carrier signal. The device includes an RF front end coupled between said NFC module and said antenna circuit and further includes a protocol detection circuit for detecting a protocol mode in response to an incoming signal received by the device. The protocol detection circuit includes a plurality of filters being adapted to generate an envelope of the incoming signal; a plurality of decoders being adapted to generate an output in response to a respective envelope generated by a corresponding one of the plurality of filters; and a decision unit being adapted to detect a protocol mode based on the output from each of the plurality of decoders.

Abstract: An HC of a code B is first transformed into an HB. A parity bit of the code B is obtained by performing an operation on the HB and an information bit of the code B. The parity bit is used to perform RS coding on a code A, to obtain a parity bit of the code A. A check code of a GEL code is obtained by performing an operation on the parity bits of the code B and the code A. Finally, a single bit parity check bit is added. The code A is defined in a finite field GF (2l1), the code B is defined in a finite field GF (2l2), and l1 and l2 are positive integers. A success rate of decoding the code A in the first row can be improved using this method.

Abstract: A memory subsystem includes a data bus to couple a memory controller to one or more memory devices. The memory controller and one or more memory devices transfer data for memory access operations. The data transfer includes the transfer of data bits and associated check bits over a transfer cycle burst. The memory devices include internal error checking and correction (ECC) separate from the system ECC managed by the memory controller. With a 2N transfer cycle for 2{circumflex over (?)}N data bits for a memory device, the memory devices can provide up to 2N memory locations for N+1 internal check bits, which can leave up to (2N minus (N+1)) extra bits to be used by the system for more robust ECC.

Abstract: A storage device includes a nonvolatile memory (NVM) device having a plurality of memory blocks and a control circuit configured to perform a read for copy-back operation in response to a receipt of a corresponding command. The control circuit performs the read for copy-back operation by reading page data from a source memory block of the plurality, generating a syndrome from the read page data, outputting the syndrome, receiving error location data in response to outputting the syndrome, correcting the read page data using the received error location data, and writing the corrected read page data to a target memory block among the plurality.

Abstract: A control method for a memory is provided. External data is received. An error correct code scheme is performed on the external data to generate first parity data. The number of logic values equal to a specific logic value in the external data and the first parity data is calculated to generate a calculation result. First reverse data is generated according to the calculation result and tendency data. The external data and the first parity data are inverted and the inverted external data, the inverted first parity data and the first reverse data are written into a cell array in response to the calculation result and the tendency data matching a predetermined condition. The external data, the first parity data and the first reverse data are written into the cell array in response to the calculation result and the tendency data not matching the predetermined condition.

Abstract: A memory module includes a first channel of first data memories and a first error correction code (ECC) memory, and a second channel of second data memories and a second ECC memory. Each first data memory transmits a corresponding first data set of first data sets with a memory controller. Each first data set corresponds to a burst length. Each second data memory transmits a corresponding second data set of the second data sets with the memory controller. Each second data set corresponds to the burst length. The first ECC memory stores first sub parity data for detecting at least one error in all of the first data sets stored in the first data memories. The second ECC memory stores second sub parity data for detecting at least one error in all of the second data sets stored in the second data memories.

Abstract: A nonvolatile memory device includes a memory cell array; a peripheral circuit configured to perform an operation corresponding to a command provided from an external device, for the memory cell array; a fail occurrence register configured to store fail occurrence information for intentionally causing an operation fail to occur; and a control logic configured to store the fail occurrence information in the fail occurrence register based on a fail occurrence command received from the external device, control the peripheral circuit to perform a test operation corresponding to a test operation command received from the external device, for the memory cell array, and control the peripheral circuit to cause an intentional fail to occur in the test operation, based on the fail occurrence information.

Abstract: A computing device includes an interface configured to interface and communicate with a dispersed storage network (DSN), a memory that stores operational instructions, and processing circuitry operably coupled to the interface and to the memory. The processing circuitry is configured to execute the operational instructions to perform various operations and functions. The computing device detects memory error(s) associated with a plurality of sets of memory devices of sets of storage unit(s) (SU(s)) within the DSN that distributedly store a set of encoded data slices (EDSs). The computing device facilitates detection of EDS error(s) associated with the memory error(s). For a set of memory devices, the computing device establishes a corresponding memory replacement priority level and facilitates replacement of corresponding memory device(s) associated with the EDS error(s) based on the corresponding memory replacement priority level.

Abstract: Apparatuses and methods for performing an error correction code (ECC) operation are provided. One example method can include generating a codeword based on a number of low density parity check (LDPC) codewords failing a LDPC decoding operation and performing a BCH decoding operation on the codeword.

Abstract: An error correction code (ECC) decoder of a semiconductor memory device is provided. The ECC decoder includes an ECC checker, a syndrome generator, and an error detection/correction circuit. The ECC checker generates characteristic information representing first error information associated with message bits in an input codeword that is read from a target page in a memory cell array. The syndrome generator outputs a syndrome vector representing second error information associated with the input codeword by performing an operation on the message bits and parity bits in the input codeword based on a parity check matrix. The an error detection/correction circuit generates a transmission codeword by selectively correcting an error bit in the input codeword based on the characteristic information and the syndrome vector, generates a flag signal indicating whether the transmission codeword includes an error bit, and outputs a transmission message based on the transmission codeword.

Abstract: Methods and apparatus relating to techniques for avoiding cache lookup for cold cache. In an example, an apparatus comprises logic, at least partially comprising hardware logic, to receive metadata from an application, wherein the meta data indicates one or more processing operations which can accommodate a predetermined level of bit errors in read operations from memory, determine, from the metadata, pixel data for which error correction code bypass is acceptable, and generate one or more error correction code bypass hints for subsequent cache access to the pixel data for which error correction code bypass is acceptable, and transmit the one or more error correction code bypass hints to a graphics processing pipeline. Other embodiments are also disclosed and claimed.

Abstract: Provided herein may be a memory controller and an operating method thereof. The memory controller may include: a read fail control circuit configured to perform, when the read operation fails, an assist read operation of determining optimal read voltages to be used to read the selected memory cells, and determine whether a threshold voltage distribution of the selected memory cells is an abnormal distribution based on read-related information obtained by the read operation and the assist read operation; and an error correction code (ECC) engine configured to perform an ECC decoding operation on hard decision data obtained by reading the selected memory cells using the optimal read voltages based on whether the threshold voltage distribution of the selected memory cells is the abnormal distribution.

Abstract: An information handling system includes interleaved dual in-line memory modules (DIMMs) that are partitioned into logical partitions, wherein each logical partition is associated with a namespace. A DIMM controller sets a custom DIMM-level namespace-based threshold to detect a DIMM error and to identify one of the logical partitions of the DIMM error using the namespace associated with the logical partition. The detected DIMM error is repaired if it exceeds an error correcting code (ECC) threshold.

Abstract: A memory system includes: a memory device including a plurality of pages; and a controller suitable for generating a read descriptor in response to an entered command, reading and outputting read data stored in at least one page in response to the read descriptor, determining whether each per-page data of the read data includes an error, storing indicators for showing whether each per-page data includes the error, re-reading some of the read data on per-page basis, based on the indicators, without generating another read descriptor, and updating the indicators based on an error check result after the re-reading.

Abstract: A method of operating a memory system includes reading, by a controller, first data from a first memory block, performing a first error correction on the first data using a first ECC circuit, performing a second error correction on the first data using a second ECC circuit when a result of the first error correction indicates a failure, and performing, by the controller, a read reclaim operation on the first memory block when the result of the first error correction indicates the failure.

Abstract: A refreshing method is described. The method includes recognizing a set of blocks of a non-volatile memory for refreshing and then refreshing a subset of the data within the blocks, where, invalid data within the blocks is not recognized for refreshing and a group of blocks whose oldest data has not aged for a pre-set time period is not recognized for refreshing.

Abstract: A memory device comprising a main memory and a controller operably connected to the main memory is provided. The main memory can comprise a plurality of memory addresses, each corresponding to a single one of a plurality of word lines. Each memory address can be included in a tracked subset of the plurality of memory addresses. Each tracked subset can include memory addresses corresponding to more than one of the plurality of word lines. The controller is configured to track a number of read operations for each tracked subset, and to scan, in response to the number of read operations for a first tracked subset exceeding a first threshold value, a portion of data corresponding to each word line of the first tracked subset to determine an error count corresponding to each word line of the first tracked subset.

Abstract: A memory system includes a nonvolatile memory and a memory controller. The memory controller determines a read voltage for first data encoded by a first encoding scheme, by generating a first histogram indicating the number of memory cells for each threshold voltage, and estimating the read voltage using: (a) the first histogram that is corrected based on a first parameter of the first encoding scheme, and a second parameter of a second encoding scheme, and an estimation function for estimating a read voltage for second data encoded by the second encoding scheme, or (b) the uncorrected first histogram, and the estimation function that is corrected based on the first and second parameters, or (c) the first histogram after partial correction based on the first and second parameters, and the estimation function after partial correction based on the first and second parameters.

Abstract: Methods and apparatus for Exclusive OR (XOR) programming of a memory device are described. A program internal to a device calculates parity or other values using an XOR Program Rule. In some embodiments, the program generates and stores a parity result directly in the memory device itself without intervention by an external controller. A method of parity generation in a memory device comprises executing an internal self-accumulating parity program, wherein the program accumulates a parity sum by superimposing newly accumulated parity information over previously stored parity information in the auxiliary memory system. In a stand-alone device embodiment, a new command “XOR program” is received with address and input data parameters causing stored data to be read at the input address and an XOR operation of the read data and new input data is performed. The results of the computation are written into memory.

Abstract: In one example, a system for format preserving encryption utilizing a key version can include a processor, and a memory resource storing instructions executable by the processor to determine a quantity of significant bits for a value to be encrypted, mask the value to include the quantity of significant bits, perform format preserving encryption on the masked value to generate an encrypted value, and append a key version to the encrypted value.

Abstract: A decoder is implemented in a field programmable gate array (FPGA) by performing logic simplification of binary expressions associated with the decoder. To perform the logic simplification, the binary expressions are arranged in a binary matrix. Further, a set of submatrices is formed based on the binary expressions such that rows of each submatrix have common data bits in one or more columns of each submatrix. Based on the common data bits, a set of subexpressions for each submatrix is formed. The set of subexpressions of each submatrix is mapped into look-up table clusters of the FPGA, thereby implementing the decoder in the FPGA.