Abstract: A thin film sensor, such as a glucose sensor, is provided for transcutaneous placement at a selected site within the body of a patient. The sensor includes several sensor layers that include conductive layers and includes a proximal segment defining conductive contacts adapted for electrical connection to a suitable monitor, and a distal segment with sensor electrodes for transcutaneous placement. The sensor electrode layers are disposed generally above each other, for example with the reference electrode above the working electrode and the working electrode above the counter electrode. The electrode layers are separated by dielectric layer.

Abstract: The invention relates to a protective coating, having the chemical composition CaSibBdNeOgHlMem, wherein Me is at least one metal of the group consisting of {Al, Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, W, Y, Sc, La, Ce, Nd, Pm, Sm, Pr, Mg, Ni, Co, Fe, Mn}, with a+b+d+e+g+l+m=1. According to the invention, the following conditions are satisfied: 0.45?a?0.98, 0.01?b?0.40, 0.01?d?0.30, 0?e?0.35, 0?g?0.20, 0?l?0.35, 0?m?0.20. The invention relates also to a coated member having a protective coating, as well as to a method for producing a protective coating, in particular a multilayer film for a member.

Abstract: To provide a production process to produce a laminate having excellent moisture resistance and abrasion resistance, and a laminate. The process for producing a laminate 1 comprises a first step of forming a dielectric layer 121, a metal layer 122 and a dielectric layer 121 in this order on a transparent substrate, and a second step of, after the first step, forming a tin zinc oxide layer 13 containing an oxide of tin and zinc as the main component. Formation of the tin zinc oxide layer 13 in the second step is carried out by sputtering using a metal target containing tin and zinc as the main component in a gas atmosphere in which a gas containing carbon atoms substantially functions as an oxidizing gas. Formation of the dielectric layer 121 in the first step is carried out in a gas atmosphere in which a gas containing no carbon atom substantially functions as an oxidizing gas.

Abstract: The invention provides a coater, and methods of using the coater, for depositing thin films onto generally-opposed major surfaces of a sheet-like substrate. The coater has a substrate transport system adapted for supporting the substrate in a vertical-offset configuration wherein the substrate is not in a perfectly vertical position but rather is offset from vertical by an acute angle. The transport system defines a path of substrate travel extending through the coater. The transport system is adapted for conveying the substrate along the path of substrate travel. Preferably, the transport system includes a side support for supporting a rear major surface of the substrate. The preferred side support bounds at least one passage through which coating material passes when such coating material is deposited onto the substrate's rear major surface. Preferably, the coater includes at least one coating apparatus (e.g.

Abstract: Embodiments of the present disclosure are directed towards techniques and configurations for formation of a dielectric with a smooth surface. In one embodiment, a method includes providing a dielectric with first and second surfaces, a conductive feature formed on the first surface, and a laminate applied to the second surface, curing the second surface while the laminate remains applied, and removing the laminate. Other embodiments may be described and/or claimed.

Abstract: The present invention includes nanotubes or rods, methods and arrays using plasmonic-magnetic bifunctional nanotubes or rods comprising: one or more silica nanotubes or rods; one or more nanomagnets embedded in a portion of the silica nanotubes or rods; and plasmonic metal nanoparticles uniformly coating in or on at least a portion of the surface of the nanomagnets and the silica nanotubes surface-coated.

Abstract: Techniques described herein are generally related to metamaterial structures for Q-switching in laser systems. The various described techniques may be applied to methods, systems, devices or combinations thereof. Sonic described metamaterial structures may include a substrate and a first conductive layer disposed on a first surface of the substrate. A dielectric layer may be disposed on a first surface of the first conductive layer and a second conductive layer having a substantially symmetric geometric shape may be disposed on a first surface of the dielectric layer. The second conductive layer may cover a portion of the first surface of the dielectric layer.

Abstract: This disclosure provides (a) methods of making an oxide layer (e.g., a dielectric layer) based on yttrium and titanium, to have a high dielectric constant and low leakage characteristic and (b) related devices and structures. An oxide layer having both yttrium and titanium may be fabricated either as an amorphous oxide or as an alternating series of monolayers. In several embodiments, the oxide is characterized by a yttrium contribution to total metal that is specifically controlled. The oxide layer can be produced as the result of a reactive process, if desired, via either a PVD process or, alternatively, via an atomic layer deposition process that employs specific precursor materials to allow for a common process temperature window for both titanium and yttrium reactions.

Abstract: In a method of switching magnet flux distribution, a magnet is arranged on a rear side of a backing plate with respect to a target holding side thereof in a magnetron sputtering cathode, and placing an article that exhibits ferromagnetism at room temperature on the target holding side of the backing plate or removing the article therefrom so that the magnet flux distribution is switched between a balanced distribution of the magnetic flux and unbalanced distribution of the magnetic flux.

Abstract: Provided is a method for making a reflective anode electrode for use in an organic electroluminescent display, comprising the steps of: sputtering a reflective Ag layer on a substrate in the presence of the inert gas in a first chamber; sputtering a transparent oxide conductive buffer layer on said Ag layer in the presence of the inert gas in a second chamber; and sputtering a transparent oxide conductive contact layer on said buffer layer in the presence of both inert gas and oxygen in the second chamber, to obtain the resulted reflective anode electrode. Also provided is a reflective anode electrode made by above method. The reflective anode electrode according to the present invention has higher reflectance and transmittance, due to the presence of the transparent conductive oxide buffer layer therein, which leads to the oxidation of the reflective layer minimized and the total transmittance substantially not affected.

Abstract: A medical implant has a microscopically rough outer coating that serves to bond the implant to animal tissue. The coating is applied to the implant by physical vapor deposition. The coating preferable is applied via a generally oblique coating flux or a low energy coating flux. In some embodiments, the coating has pores. The pores can contain a drug, which can diffuse over a period of time. The coating may be partially nonporous to protect the implant from corrosion. The coating can have an outer porous layer that can bond with animal tissue easily.

Abstract: A substrate having a coating is disclosed. The coating is formed of a plurality of layers. At least one of the layers includes a super alloy and at least two additional layers including silver. A coating for a substrate is also disclosed. A method of applying a coating to a substrate is further disclosed.

Abstract: A method for producing a metal article may include: Producing a supply of a composite metal powder by: providing a supply of molybdenum metal powder; providing a supply of a sodium compound; combining the molybdenum metal powder and the sodium compound with a liquid to form a slurry; feeding the slurry into a stream of hot gas; and recovering the composite metal powder; and consolidating the composite metal powder to form the metal article, the metal article comprising a sodium/molybdenum metal matrix. Also disclosed is a metal article produced accordance with this method.

Abstract: A coated glass ceramic cooking plate is provided, which has a multilayer coating on its lower surface. The multilayer coating includes a metallic layer of an alloy including components chromium, iron, nickel, and silicon. The silicon content of the alloy is at least 2 atomic percent. This metallic layer is covered by a barrier layer in form of an oxide of an alloy including components chromium, iron, nickel, and silicon, also with a silicon content of at least 2 atomic percent. The molar content of oxygen of the barrier layer is greater by at least a factor of 10 than that of the metallic layer.

Abstract: A method of preparing or operating a mass spectrometer vacuum interface comprising a skimmer apparatus having a skimmer aperture and an internal surface of the skimmer apparatus, comprising disposing an adsorbent or getter material on the internal surface. The internal surface has a deposition region where matter from plasma flows may be deposited and the material is disposed on part or all of the deposition region. The disposing step may be performed before a first use and/or intermittently, especially to refresh a previously disposed material. Providing such material serves to trap or collect deposition matter which might anyway be deposited but in such a way that subsequent liberation of that matter is prevented or at least reduced.

Abstract: A cathode assembly for a sputter deposition apparatus and a method for coating a substrate is provided. The cathode assembly has a coating side for coating on a substrate. Further, the cathode assembly includes a rotary target assembly adapted for rotating a target material around a rotary axis; at least a first magnet having an inner magnet pole and at least one outer magnet poles and being adapted for generating one or more plasma regions. The cathode assembly has a first angular coordinate for a magnet pole, the magnet pole being provided for the coating side, and a second angular coordinate for a further magnet pole, the magnet pole being provided for the coating side; wherein the first angular coordinate and the second angular coordinate define an angle a larger than about 20 degrees and smaller than about 160 degrees.

Abstract: The present invention relates to a high glossy molding sheet and a method for manufacturing the same that may realize a same outer appearance with an actual metal surface by forming a reverse pattern with an opposite shape to an original pattern of a metal board using a transfer of an ultraviolet curable resin layer, and forming a metal deposition layer on the top and laminating on a board.

Abstract: The present invention relates to an indium oxide film formed by chemical vapor deposition or atomic layer deposition, or to an oxide film containing indium, and to a method for forming same. By chemical vapor deposition or atomic layer deposition, wherein an indium material that is a liquid at room temperature is used, an oxide film containing indium can be formed on a substrate having a large area, and particularly a substrate for manufacturing a display device.

Abstract: A deformable implantable medical device such as a stent comprising metallic, polymer and/or composite substrate having a columnar structured plasma polymer surface capable of binding functional biological molecules. The polymer surface can be bound to the substrate through a mixed or graded interface formed by a co-deposition process where a substrate material is deposited with carbon containing species while gradually reducing the substrate material proportion and increasing the carbon containing species proportion. The device is able to undergo deformation without substantial delamination of the plasma polymer surface.

Abstract: A multi-step process performed in a plasma sputter chamber including sputter deposition from the target and argon sputter etching of the substrate. The chamber includes a quadruple electromagnetic coil array coaxially arranged in a rectangular array about a chamber axis outside the sidewalls of a plasma sputter reactor in back of an RF coil within the chamber. The coil currents can be separately controlled to produce different magnetic field distributions, for example, between a sputter deposition mode in which the sputter target is powered to sputter target material onto a wafer and a sputter etch mode in which the RF coil supports the argon sputtering plasma. A TaN/Ta barrier is first sputter deposited with high target power and wafer bias. Argon etching is performed with even higher wafer bias. A flash step is applied with reduced target power and wafer bias.

Abstract: The present disclosure provides, among other things, scale-coated surfaces, vessels with controlled deposits of scale, and associated methods for enhanced boiling heat transfer. It is presently found that creating and/or maintaining a scale deposit at a controlled thickness actually enhances a type of boiling called nucleate boiling, which improves heat transfer.

Abstract: Various embodiments provide a method and apparatus for forming a three-dimensional article through successive fusion of parts of at least one layer of a powder bed provided on a work table in an additive manufacturing machine, which parts corresponds to successive cross sections of the three-dimensional article. The method comprises the steps of: applying a layer of predetermined thickness of powder particles on the work table, applying a coating on at least a portion of the powder particles, which coating is at least partially covering the powder particles, and fusing the powder particles on the work table with an electron beam.

Abstract: A high traction synthetic rope comprising a braided sheath (8) adhered to a synthetic strength member (7) by means of a first synthetic portion (9) and portions of material (23) adhered to the outside surface of the braided sheath by means of a second synthetic portion (21), where the portions of material (23) are formed of a substance that differs from a substance mainly forming the second synthetic portion (21) and exhibits greater friction when wet or with greasy conditions and measured on an iron surface than does the substance mainly forming the second synthetic portion. Also methods of manufacturing such a high traction synthetic rope are disclosed. The rope shows reliable traction on driven rotating elements during wet/greasy conditions.

Abstract: A method of depositing lithium-containing films on a battery substrate in a sputtering chamber is provided. At least one pair of sputtering targets that each comprise a lithium-containing sputtering member is provided in the sputtering chamber, the sputtering targets selected to each have a conductivity of at least about 5×10?6 S·cm?1. A substrate carrier holding at least one battery substrate is placed in the sputtering chamber. A pressure of sputtering gas is maintained in the sputtering chamber. The sputtering gas is energized by applying to the pair of sputtering targets, an electrical power at a frequency of from about 10 to about 100 kHz.

Abstract: A cutting tool insert for machining by chip removal includes a body of polycrystalline cubic boron nitride compact (PCBN), either as a solid insert or attached to a backing body, onto which a hard and wear resistant PVD coating is deposited. The coating includes a polycrystalline nanolaminated structure of alternating A and B layers, where layer A is (Ti,Al,Me1)N and Me1 is one or more of the metal elements from group 3, 4, 5 or 6 in the periodic table, layer B is (Ti,Si,Me2)N and Me2 is one or more of the metal elements from group 3, 4, 5 or 6 in the periodic table including Al with a thickness between 0.5 and 10 ?m. The insert is particularly useful in metal cutting applications generating high temperatures, e.g., high speed machining of steels, cast irons, super alloys and hardened steels.

Abstract: Ion-enhanced physical vapor deposition is augmented by sputtering to deposit multi-component materials. The process may be used to deposit coatings and repair material on Ti alloy turbine engine parts. The physical vapor deposition may be ion-enhanced electron beam physical vapor deposition.

Abstract: A press molding glass material including: a core portion composed of optical glass; and a surface layer covering the core portion, wherein the surface layer includes an outermost layer contacting with a molding surface of a molding die in press molding and an intermediate layer adjacent to the outermost layer, the outermost layer is a silicon oxide film having a surface free energy measured by a three-solution method of equal to or less than 75 mJ/m2 and having a film thickness of less than 15 nm, and the intermediate layer is a film composed of a film material having a bond-radius difference from a silicon oxide based on a stoichiometric composition of more than 0.10 ?, wherein, in a case in which the bond-radius difference is more than 0.10 ? and equal to or less than 0.40 ?, a film thickness of the intermediate layer is equal to or less than 5 nm.

Abstract: Planetary carriers (22) for workpieces mounted on a carousel (19) are provided within a vacuum chamber. A source (24) for a cloud comprising ions (CL) is provided so that a central axis (ACL) of the cloud intercepts the rotary axis (A20) of the carousel (19). The cloud (CL) has an ion density profile at the moving path (T) of planetary axes (A22) which drops to 50% of the maximum ion density at a distance from the addressed center axis (ACL) which is at most half the diameter of the planetary carriers (22). When workpieces upon the planetary carriers (22) are etched by the cloud comprising ions material which is etched off is substantially not redeposited on neighboring planetary carriers but rather ejected towards the wall of the vacuum chamber.

Abstract: In one aspect, coated cutting tools are described herein which, in some embodiments, can demonstrate improved wear resistance in one or more cutting applications. In some embodiments, a coated cutting tool described herein comprises a substrate and a coating adhered to the substrate, the coating comprising an inner layer deposited by physical vapor deposition and an outer deposited by physical vapor deposition over the inner layer.

Abstract: A system and method for combinatorial processing of substrates in a processing chamber. The system includes a plurality of generators for supplying power into the processing chamber. A plurality of sputter guns provides power to different regions of a substrate. A switchbox switches power from a generator to a sputter gun via a plurality of coaxial switches. A controller positioned within the switchbox automatically distributes power from a specific generator to a specific sputter gun under programmable logic control.

Abstract: A cutting tool insert for machining by chip removal includes a body of a hard alloy of cemented carbide, cermet, ceramics, cubic boron nitride based material or high speed steel, onto which a hard and wear resistant coating is deposited by physical vapor deposition. The coating includes a polycrystalline nanolaminated structure of alternating layers A and B where layer A is (Ti,Al,Me1)N and Me1 is optionally one or more of the metal elements from group 3, 4, 5 or 6 in the periodic table, layer B is (Ti,Si,Me2)N and Me2 is optionally one or more of the metal elements from group 3, 4, 5 or 6 in the periodic table including Al with a thickness between 0.5 and 20 ?m and method of making the same. This insert is particularly useful in metal cutting applications generating high temperatures with improved edge integrity, machining of super alloys, stainless and hardened steels.

Abstract: A method for producing a cubic boron nitride (cBN) thin film includes depositing cBN onto nanocrystalline diamond having controlled surface irregularity characteristics to improve the adhesion at the interface of cBN/nanocrystalline diamond, while incorporating hydrogen to a reaction gas upon the synthesis of cBN and controlling the feed time of hydrogen, so that harmful reactions occurring on a surface of nanocrystalline diamond and residual stress applied to cBN may be inhibited. Also, a cBN thin film structure is obtained by the method. The cBN thin film is formed on the nanocrystalline diamond thin film by using a physical vapor deposition process, wherein a reaction gas supplied when the deposition of a thin film occurs is a mixed gas of argon (Ar) with nitrogen (N2), and hydrogen (H2) is added to the reaction gas at a time after the deposition of a thin film occurs.

Abstract: A material for fuel cell separator, wherein a surface layer 6 containing Au and Cr is formed on a surface of a Ti base 2, and an intermediate layer 2a containing Ti, O, Cr, and less than 20 atomic % of Au is present between the Ti base and the surface layer, a thickness of an area containing 65 atomic % or more of Au being 1.5 nm or more, a maximum concentration of Au being 80 atomic % or more, a coating amount of Au being 9000 to 40000 ng/cm2, a ratio represented by (Au coating amount)/(Cr coating amount) being 10 or more, a coating amount of Cr being 200 ng/cm2 or more, and in the intermediate layer having an area containing 10% or more of Ti, 10% or more of O and 20% or more of Cr being 1 nm or more.

Abstract: A method and system for DC magnetron sputtering deposition of films on plastic substrates. The method includes using a shield to block deposition in a spatial region corresponding to a plasma region formed during magnetron sputtering. An optoelectronic device including an amorphous electrode film is also disclosed.

Abstract: A power storage device with favorable battery characteristics and a manufacturing method thereof are provided. The power storage device includes at least a positive electrode and a negative electrode provided so as to face the positive electrode with an electrolyte provided therebetween. The positive electrode includes a collector and a film containing an active material over the collector. The film containing the active material contains LieFefPgOh satisfying relations 3.5?h/g?4.5, 0.6?g/f?1.1, and 0?e/f?1.3 and LiaFebPcOd satisfying relations 3.5?d/c?4.5, 0.6?c/b?1.8, and 0.7?a/b?2.8. The film containing the active material contains the LiaFebPcOd satisfying the relations 3.5?d/c?4.5, 0.6?c/b?1.8, and 0.7?a/b?2.8 in a region which is in contact with the electrolyte.

Abstract: Provided is High Productivity Combinatorial (HPC) testing methodology of semiconductor substrates, each including multiple site isolated regions. The site isolated regions are used for testing different compositions and/or structures of barrier layers disposed over silver reflectors. The tested barrier layers may include all or at least two of nickel, chromium, titanium, and aluminum. In some embodiments, the barrier layers include oxygen. This combination allows using relative thin barrier layers (e.g., 5-30 Angstroms thick) that have high transparency yet provide sufficient protection to the silver reflector. The amount of nickel in a barrier layer may be 5-10% by weight, chromium—25-30%, titanium and aluminum—30%-35% each. The barrier layer may be co-sputtered in a reactive or inert-environment using one or more targets that include all four metals. An article may include multiple silver reflectors, each having its own barrier layer.

Abstract: Embodiments provided herein describe low-e panels and methods for forming low-e panels. A transparent substrate is provided. A reflective layer is formed above the transparent substrate. An over-coating layer is formed above the reflective layer. The over-coating layer includes first, second, and third sub-layers.

Abstract: Embodiments provided herein describe anti-glare coatings and panels and methods for forming anti-glare coatings and panels. A transparent substrate is provided. A polymer is sputtered onto the transparent substrate to form an anti-glare coating on the transparent substrate.

Abstract: Low emissivity panels can include a protection layer of silicon nitride on a layer of ZnO on a layer of Zn2SnOx. The low emissivity panels can also include NiNbTiOx as a barrier layer. The low emissivity panels have high light to solar gain, color neutral, together with similar observable color and light transmission before and after a heat treatment process.

Abstract: In some embodiments, oxidants such as ozone (O3) and/or nitrous oxide (N2O) are used during the reactive sputtering of metal-based semiconductor layers used in TFT devices. The O3 and N2O gases are stronger oxidants and result in a decrease in the concentration of oxygen vacancies within the metal-based semiconductor layer. The decrease in the concentration of oxygen vacancies may result in improved stability under conditions of negative bias illumination stress (NBIS).

Abstract: A patterned multilayered barrier film for protecting devices from permeation of moisture and gases includes a substrate, a first layer on the substrate acting as a barrier layer, a second layer on the first layer and acting as a decoupling or planarization layer, and a third layer on the second layer, and acting as a barrier layer. Each of the first and third layers has an area greater than an area of the second layer such that the second layer is completely enclosed between the first and third layers defining an edge perimeter surrounding the second layer that is completely sealed between the first and third layers. The patterned multilayered barrier film may be cut into individual barrier units between portions of the second layer such that portions of the second layer of each individual barrier unit are completely edge-sealed between the first and third layers.

Abstract: A system for depositing a film on a substrate comprises a lateral control shutter disposed between the substrate and a material source. The lateral control shutter is configured to block some predetermined portion of source material to prevent deposition of source material onto undesirable portion of the substrate. One of the lateral control shutter or the substrate moves with respect to the other to facilitate moving a lateral growth boundary originating from one or more seed crystals. A lateral epitaxial deposition across the substrate ensues, by having an advancing growth front that expands grain size and forms a single crystal film on the surface of the substrate.

Abstract: The present invention provides hard coating film which excels conventional surface coating layer in wear resistance, has lower frictional coefficient and better slideability, a material coated with the hard coating film, a die for cold plastic working, and a method for forming the hard coating film. The hard coating film according to the present invention is a hard coating film comprising (NbxM1?x)y(BaCbN1?a?b)1?y, where 0.2?x?1.0??Equation (1) 0?a?0.3??Equation (2) 0?1?a?b?0.5??Equation (3) 0.5?b=1??Equation (4) 0.4?1?y?0.9??Equation (5) [however, M denotes at least one species of elements belonging to Groups 4a, 5a, and 6a and Si and Al; x, 1?x, a, b, and 1?a?b represent respectively the atomic ratio of Nb, M, B, C and N; and y and 1?y represent respectively the ratio of (NbxM1?x) and (BaCbN1?a?b).

Abstract: A mold for plastic forming having excellent seizure resistance controlled by adjusting its surface properties. In addition, a process producing the mold, that includes: roughening a surface of a base material by a shot blast method to adjust its arithmetic averaged roughness Ra: higher than 1 ?m but 2 ?m or lower; polishing the surface of the base material to adjust its skewness Rsk to 0 or lower while retaining Ra: 0.3 ?m or higher; and forming a hard film on the surface of the base material where the surface of the hard film has an arithmetic averaged roughness Ra: 0.3 ?m or higher but 2 ?m or lower and skewness Rsk: 0 or lower. Adjusting the surface of the mold to have a non-concave-biased configuration, limits the capacity for concaves to accumulate lubricant, such that the lubricant is sufficiently deposited on the surfaces of the convexes.

Abstract: A method for manufacturing a sputtering target with which an oxide semiconductor film with a small amount of defects can be formed is provided. Alternatively, an oxide semiconductor film with a small amount of defects is formed. A method for manufacturing a sputtering target is provided, which includes the steps of: forming a polycrystalline In-M-Zn oxide (M represents a metal chosen among aluminum, titanium, gallium, yttrium, zirconium, lanthanum, cesium, neodymium, and hafnium) powder by mixing, sintering, and grinding indium oxide, an oxide of the metal, and zinc oxide; forming a mixture by mixing the polycrystalline In-M-Zn oxide powder and a zinc oxide powder; forming a compact by compacting the mixture; and sintering the compact.

Abstract: Certain example embodiments relate to systems and/or methods for preferentially and selectively heat treating conductive coatings such as ITO using specifically tuned near infrared-short wave infrared (NIR-SWIR) radiation. In certain example embodiments, the coating is preferentially heated, thereby improving its properties while at the underlying substrate is kept at low temperatures. Such techniques are advantageous for applications on glass and/or other substrates, e.g., where elevated substrate temperatures can lead to stress changes that adversely effect downstream processing (such as, for example, cutting, grinding, etc.) and may sometimes even result in substrate breakage or deformation. Selective heating of the coating may in certain example embodiments be obtained by using IR emitters with peak outputs over spectral wavelengths where the conductive coating (or the conductive layer(s) in the conductive coating) is significantly absorbing but where the substrate has reduced or minimal absorption.

Abstract: The substrate with a transparent electrode includes a first dielectric material layer mainly composed of SiOx, a second dielectric material layer mainly composed of a metal oxide, a third dielectric material layer mainly composed of SiOy, and a transparent electrode layer, in this order on a transparent film substrate. The transparent electrode layer is patterned to have an electrode layer-formed part and an electrode layer non-formed part. The transparent electrode layer is a layer mainly composed of an indium-tin composite oxide and having a thickness of 20 nm to 35 nm. The refractive index n1 of the first dielectric material layer, the refractive index n2 of the second dielectric material layer, and the refractive index n3 of the third dielectric material layer satisfy n3<n1<n2. The first dielectric material layer, the second dielectric material layer and the third dielectric material layer each have specific thicknesses.

Abstract: A method of forming a CZT(S,Se) thin film from a quaternary target involves sputtering a quaternary target onto a substrate, wherein the quaternary target comprises (a) copper, (b) zinc, (c) tin, and (d) selenium and/or sulfur, wherein each component (a) through (d) is present in the quaternary target within ±50% of a 2:1:1:4 molar ratio, respectively, thereby forming a CZT(S,Se) thin film on the substrate, wherein the CZT(S,Se) thin film has a kesterite crystalline phase and a band gap of about 1.0 to 1.5 eV. In an embodiment, a ternary target is employed.

Abstract: A system that incorporates teachings of the subject disclosure may include, for example, a method in which a selection is made for a first major constituent, a second major constituent and a minor constituent for forming a desired material. The method can include mixing the first major constituent, the second major constituent and the minor constituent in a single mixing step to provide a mixture of constituents. The method can include drying the mixture of constituents to provide a dried mixture of constituents and calcining the dried mixture of constituents to provide a calcinated mixture of constituents. The method can include processing the calcinated mixture of constituents to provide a powder of constituents. Other embodiments are disclosed.

Abstract: A power storage device with favorable battery characteristics and a manufacturing method thereof are provided. The power storage device includes at least a positive electrode and a negative electrode provided so as to face the positive electrode with an electrolyte provided therebetween. The positive electrode includes a collector and a film containing an active material over the collector. The film containing the active material contains LieFefPgOh satisfying relations 3.5?h/g?4.5, 0.6?g/f?1.1, and 0?e/f?1.3 and LiaFebPcOd satisfying relations 3.5?d/c?4.5, 0.6?c/b?1.8, and 0.7?a/b?2.8. The film containing the active material contains the LiaFebPcOd satisfying the relations 3.5?d/c?4.5, 0.6?c/b?1.8, and 0.7?a/b?2.8 in a region which is in contact with the electrolyte.