Abstract: A coated glass pane comprising at least the following layers in sequence: a glass substrate; a lower anti-reflection layer; a silver-based functional layer; a barrier layer, comprising at least the following three partial barrier layers in sequence from the silver-based functional layer, a lower partial barrier layer based on an oxide of Zn, Ti, ZnSn, InSn, Zr, Al, Sn and/or Si, and/or an (oxi)nitride of Si and/or of Al, having a thickness of at most 5 nm, a central partial barrier layer based on an oxide of Zn, Ti, Zn Sn, InSn, Zr, Al, Sn and/or Si, and/or an (oxi)nitride of Si and/or of Al, having a thickness of at most 5 nm, and an upper partial barrier layer based on an oxide of Zn, Ti, Zn Sn, InSn, Zr, Al, Sn and/or Si, and/or an (oxi)nitride of Si and/or of Al, having a thickness of at most 10 nm; and an upper anti-reflection layer; wherein the central partial barrier layer has a different composition to both the lower partial barrier layer and the upper partial barrier layer.

Abstract: A sputtering device includes: a sputtering target; a substrate supporter facing the sputtering target and upon which a substrate is disposed; an anode mask between the sputtering target and the substrate which is on the substrate supporter; and a gas distribution member between the anode mask and the sputtering target, and including a plurality of gas distribution tubes separated from each other. Each gas distribution tube includes a plurality of discharge holes defined therein and through which gas is discharged to a vacuum chamber configured to receive the sputtering device.

Abstract: In a thin film device including a thin film electrode which has a main electrode layer formed of tungsten, a thin film electrode having a low resistivity is realized. There is provided a thin film device including a thin film electrode that has an underlayer and a main electrode layer formed on the underlayer. The underlayer is formed of a titanium-tungsten alloy having a crystalline structure with a wavy-like surface morphology, and the main electrode layer is formed of tungsten having a crystalline structure with a wavy-like surface morphology.

Abstract: A multilayer stack is described. The multilayer stack includes: (i) one or more inorganic barrier layers for reducing transport of gas or vapor molecules therethrough; (ii) an inorganic reactive layer disposed adjacent to one or more of the inorganic barrier layers, and the reactive layer capable of reacting with the gas or the vapor molecules; and (iii) wherein, in an operational state of the multilayer stack, the vapor or the gas molecules that diffuse through one or more of the inorganic barrier layers react with the inorganic reactive layer, and thereby allow said multilayer stack to be substantially impervious to the gas or the vapor molecules.

Abstract: A device and a method of facing target sputtering are provided, which can easily change magnetic flux line patterns between facing targets, thereby enabling to conveniently perform a plurality of kinds of sputtering such as facing target sputtering with facing mode, facing target sputtering with mixed mode composed of facing mode and magnetron mode. Thus, the device and the method of facing target sputtering effective for each material is provided. The sputtering device for forming a thin film in which a pair of target holders 2 having targets 1 arranged thereon is provided so as to arrange targets faced to each other. A pole group including a plurality of pole elements having at least a different pole direction is arranged at the back side of the target holders opposite to surfaces on which the targets are arranged. The pole elements are any of a permanent magnet 4, a yoke 7, 8 and an electromagnet 13 or a combination of them.

Abstract: The invention relates to a method for producing the thin film made of lead zirconate titanate in a 111-oriented perovskite structure, comprising the following steps: providing a substrate having a substrate temperature above 450° C. and a lead target, a zirconium target, and a titanium target; applying the thin film by sputtering lead, zirconium, and titanium from the respective targets onto the substrate, wherein the total deposition rate of lead, zirconium, and titanium is greater than 10 nm/min, the deposition rate of zirconium is selected in such a way that the atomic concentration of zirconium with respect to the atomic concentration of zirconium together with titanium in the thin film is between 0.2 and 0.

Abstract: A transparent electrode is provided for an organic light emitting diode (OLED) device. The electrode may be made according to a method including: sputter-depositing a first layer of or including indium tin oxide (ITO) on a substrate; sputter-depositing a thin second metallic or substantially metallic layer on the glass substrate over the first layer to form an electrode structure, and heat treating the electrode structure at temperature(s) of at least about 400 degrees C. in order to thermally activate at least the first layer of or including ITO. The electrode structure may then be provided in an OLED device on the light-emitting side of the organic light emitting semiconductor layer.

Abstract: In a method for using a sputtering target, by making an ion collide with the sputtering target, a sputtered particle whose size is greater than or equal to 1/3000 and less than or equal to 1/20, preferably greater than or equal to 1/1000 and less than or equal to 1/30 of a crystal grain is generated.

Abstract: A method of processing a semiconductor workpiece includes placing a back surface of the workpiece on a workpiece support in a chamber so that the front surface of the workpiece faces into the chamber for processing, and the back surface is in fluid communication with a back region having an associated back gas pressure. The method further includes performing a workpiece processing step at a first chamber pressure Pc1 and a first back pressure Pb1, wherein Pc1 and Pb1 give rise to a pressure differential, Pb1-Pc1, and performing a workpiece cooling step at a second chamber pressure Pc2 and a second back pressure Pb2, wherein Pc2 and Pb2 are higher than Pc1 and Pb1, respectively.

Abstract: Compounds having the formula LiaEC1M1bM2cOx, wherein “a” ranges from about 0.5 to about 3; b+c ranges from about 0.1 to about 1; c/(b+c) ranges from about 0.1 to about 0.9; and wherein x is about 0.1 to about 50, are disclosed. Methods of making these compounds as well as their use in thin film materials and electrochromic devices are also disclosed.

Abstract: Provided is a silicon target material in which particles are not easily generated during a sputtering process and to form a low-defect (high quality) silicon-containing film. A silicon target material having a specific resistance of 20 ?·cm or more at room temperature is used for forming a silicon-containing film. The silicon target material may be polycrystalline or noncrystalline. However, when the silicon target material is single-crystalline, a more stable discharge state can be obtained. Also, a single-crystal silicon in which crystals are grown by an FZ method is a preferable material as a highly-pure silicon target material because its content of oxygen is low. Further, a target material having n-type conductivity and containing donor impurities is preferable to obtain stable discharge characteristics. Only a single or a plurality of silicon target materials according to the present invention may be used for sputtering film formation of the silicon-containing film.

Abstract: There is disclosed articles for and methods of confining volatile materials in the void volume defined by crystalline void materials. In one embodiment, the hydrogen isotopes are confined inside carbon nanotubes for storage and the production of energy. There is also disclosed a method of generating various reactions by confining the volatile materials inside the crystalline void structure and releasing the confined volatile material. In this embodiment, the released volatile material may be combined with a different material to initiate or sustain a chemical, thermal, nuclear, electrical, mechanical, or biological reaction.

Abstract: A machine (12, 13) for painting small three-dimensional objects (2) comprises a plurality of spindles (9) equipped with holders (10) for objects (2) to be painted. A unit (15) able to rotate about an axis (16) is equipped with a plurality of seats (17) structured to receive a spindle (9). The spindle (9) is removably associable with said seat (17). An airless painting device (25) is operatively positioned at a painting station (26) designed to receive said seats (17) in sequence. First actuator means (27) drive the rotation about a painting axis (18) at least of the holder (10) when the seat is positioned at the painting station (26). Means (29) for transferring the objects (2) grip a spindle (9) positioned along a transfer line (3) and place it in one of the seats (17) and/or vice versa.

Abstract: To provide a sputtering target which enables an In—Zn oxide film with a high degree of crystallinity to be formed and a method for using the sputtering target. The sputtering target includes a polycrystalline In—Zn oxide containing a plurality of crystal grains whose average grain size is greater than or equal to 0.06 ?m and less than or equal to 3 ?m. Further, the crystal grains each have a cleavage plane, and as the method for using the sputtering target, sputtered particles are separated from the cleavage planes by collision of an ion with the sputtering target, and the sputtered particles are positively charged and deposited on a deposition surface uniformly while repelling with each other.

Abstract: To provide a gas barrier laminate film containing a substrate film having on at least one surface thereof one layer or plural layers of an inorganic thin film layer, a first layer of the inorganic thin film layer on a side of the substrate film being formed by a facing target sputtering method, and a method for producing a gas barrier laminate film, containing forming one layer or plural layers of an inorganic thin film layer on at least one surface of a substrate film, a first layer of the inorganic thin film layer on a side of the substrate film being formed by a facing target sputtering method, and thus to provide a gas barrier laminate film with high gas barrier property having a dense inorganic thin film layer that inflicts less damage to a substrate film, particularly to a resin film, on which the inorganic thin film layer is formed, and a method for producing the same.

Abstract: A two-layered copper-clad laminate material, in which one surface or both surfaces of a polyimide film having a thickness of 12.5 to 50 ?m is subjected to a modification treatment by means of a glow discharge plasma treatment in an oxygen gas atmosphere, and a copper layer having a thickness of 1 to 5 ?m is formed by means of sputtering or electroplating on one surface or both surfaces of the polyimide film after the modification treatment; characterized in that the integrated intensity ratio of a C1S peak at 287 to 290 eV to a C1S peak at 283 to 287 eV, obtained by analyzing the photoelectron spectroscopy (XPS) spectra of the surface of the polyimide film after the plasma treatment, is within the range of 0.03 to 0.11.

Abstract: A deposition apparatus comprises a vacuum chamber; a substrate holder; a target; and an angle correcting plate provided so as to cover an upper space of the principal surface of the substrate, and provided outside a spatial region encompassed by line segments connecting a periphery of the principal surface of the target and a periphery of the principal surface of the substrate, wherein when an arbitrary point on the principal surface of the substrate is denoted by B and at least a center point on the principal surface of the target is denoted by C, a part of the principal surface of the angle correcting plate exists on each line which forms 45° from the respective point B with respect to each line which connects the respective point B and the point C, and another part of the principal surface of the angle correcting plate extends to a side opposite to the target.

Abstract: The present invention provides a hydrogen separation membrane based on nanoporous, composite metal carbide or metal sulfide coated membranes capable of high flux and permselectivity for hydrogen without platinum group metals. The present invention is capable of being operated over a broad temperature range, including at elevated temperatures, while maintaining hydrogen selectivity.

Abstract: It is provided a device for supporting a rotatable target of a deposition apparatus for sputtering material onto a substrate, wherein the device includes a drive unit for rotating the rotatable target; a ring-shaped part connected to the drive unit for attaching the drive unit to the rotatable target; and, a shield for covering the ring-shaped part. The shield is adapted for rotating together with the ring-shaped part and includes a plurality of parts assembled together. Furthermore, a sputtering apparatus and a method for supporting a rotatable target are provided.

Abstract: In order to obtain a ferroelectric thin film having good crystallinity and realizing high piezoelectric properties, and a production method therefor, provided is a ferroelectric thin film constituting a dielectric material having a perovskite structure that comprises Zr and Ti formed on a substrate, wherein a layer having a Zr ratio that is smaller than a predetermined ratio and having good crystallinity and a layer that realizes good piezoelectric properties and has a Zr ratio that is about as great as the predetermined ratio are combined. A production method is also provided.

Abstract: A method of manufacturing a thermochromic window, with which the thermochromic window can have increased visible light transmittance while maintaining the thermochromic characteristics thereof. The method includes the steps of forming a first transparent conductive film on a substrate, forming a pre-thermochromic thin film on the first transparent conductive film, and heat-treating a multilayer structure that includes the substrate, the first transparent conductive film and the pre-thermochromic thin film, thereby reforming the pre-thermochromic thin film into a thermochromic thin film.

Abstract: A method of manufacturing a semiconductor device comprises forming a contact hole within an interlayer insulating film of a substrate and forming a contact plug while the substrate is heated. In forming the contact plug, the substrate is held on a stage within the chamber of a sputtering apparatus through a chuck, and an ESC voltage applied to the chuck is increased stepwise in a plurality of steps. First target power is applied to a target within the chamber to form a first Al film in the contact hole. Next, second target power higher than the first target power is applied to the target within the chamber to form a second Al film on the first Al film.

Abstract: To form an oxide film with a high degree of crystallinity, which includes a plurality of metal elements. Further, to provide a sputtering target which enables the oxide film to be formed and a method for using the sputtering target. The sputtering target includes a polycrystalline oxide containing a plurality of crystal grains whose average grain size is less than or equal to 3 ?m. The plurality of crystal grains each have a cleavage plane. When the sputtering target includes a plurality of crystal grains whose average grain size is less than or equal to 3 ?m, by making an ion collide with the sputtering target, a sputtered particle can be separated from the cleavage plane of the crystal grain.

Abstract: A method and article of manufacture of intermixed tunable resistance composite materials. A conducting material and an insulating material are deposited by such methods as ALD or CVD to construct composites with intermixed materials which do not have structure or properties like their bulk counterparts.

Abstract: A process in which both an optical coating, for example, an AR coating, and an ETC coating are deposited on a glass substrate article, in sequential steps, with the optical coating being deposited first and the ETC coating being deposited second, using the same apparatus and without exposing the article to the atmosphere at any time during the application of the optical coating and ETC coating.

Abstract: A lattice matching layer for use in a multilayer substrate structure comprises a lattice matching layer. The lattice matching layer includes a first chemical element and a second chemical element. Each of the first and second chemical elements has a hexagonal close-packed structure at room temperature that transforms to a body-centered cubic structure at an ?-? phase transition temperature higher than the room temperature. The hexagonal close-packed structure of the first chemical element has a first lattice parameter. The hexagonal close-packed structure of the second chemical element has a second lattice parameter. The second chemical element is miscible with the first chemical element to form an alloy with a hexagonal close-packed structure at the room temperature. A lattice constant of the alloy is approximately equal to a lattice constant of a member of group III-V compound semiconductors.

Abstract: Thin film sputtering apparatus and methods for depositing thin films using the apparatus are provided. The sputtering apparatus comprise a sputtering chamber that houses a deposition substrate and a sputtering source configured to deposit a thin film of material onto the deposition substrate. The deposition substrate has a deposition surface with a central axis running parallel with the deposition surface normal. The magnetron sputtering source comprises two or more sputtering targets, each sputtering target having a sputtering surface with a central axis running parallel with the sputtering surface normal. The sputtering surfaces are disposed opposite the deposition surface, such that the sputtering surfaces face the deposition surface in a parallel or substantially parallel arrangement, and the central axes of the sputtering surfaces run parallel with, but are transversely offset with respect to, the central axis of the deposition surface.

Abstract: A reflective film laminate is provided with high productivity and at low cost in which a protective film with minimized pinholes is provided to improve the alkali resistance and warm water resistance of the reflective film laminate including a pure Al film or an Al-based alloy film so that a reflectivity reduction resulting from the elution or oxidization of the Al film in an alkaline or warm water environment is less likely to occur. The reflective film laminate of the present invention includes, over a substrate, a pure Al film or an Al-based alloy film as a first layer, and an oxide film of a metal containing one or more elements selected from the group consisting of Zr, Cr, Y, Nb, Hf, Ta, W, Ti, Si, and Mo as a second layer over the first layer. The thickness of the second layer is 0.1 to 10 nm.

Abstract: A housing is provided which includes an aluminum or aluminum alloy substrate, an aluminum layer and a corrosion resistant layer formed on the aluminum or aluminum alloy substrate in that order. The corrosion resistant layer is an Al—O layer. Then, Gd ions are implanted in the Al—O layer by ion implantation process. The atomic percentages of O in the Al—O gradient layer gradually increase from the side of Al—O gradient layer near the aluminum or aluminum alloy substrate to the other side of Al—O gradient layer, away from aluminum or aluminum alloy substrate. Therefore the housing has a high corrosion resistance. A method for making the housing is also provided.

Abstract: A barrier film including a substrate, a base (co)polymer layer applied on a major surface of the substrate, an oxide layer applied on the base (co)polymer layer, and a protective (co)polymer layer applied on the oxide layer. The protective (co)polymer layer is formed as the reaction product of a first (meth)acryloyl compound and a (meth)acryl-silane compound derived from a Michael reaction between a second (meth)acryloyl compound and an aminosilane. The first and second (meth)acryloyl compounds may be the same. In some embodiments, a multiplicity of alternating layers of the oxide layer and the protective (co)polymer layer may be used. An oxide layer can be applied over the top protective (co)polymer layer. The barrier films provide, in some embodiments, enhanced resistance to moisture and improved peel strength adhesion of the protective (co)polymer layer(s) to the underlying layers. A process of making, and methods of using the barrier film are also described.

Abstract: A method for making low emissivity panels, comprising forming highly smooth layers of silver on highly smooth layers of base or seed films. The highly smooth layers can be achieved by collimated sputtering, lowering the angular distribution of the sputtered particles when reaching the substrate.

Abstract: A housing is provided which includes an aluminum or aluminum alloy substrate, an aluminum layer and a corrosion resistant layer formed on the aluminum or aluminum alloy substrate in that order. The corrosion resistant layer is an Al—O layer. Then, Nd ions are implanted in the Al—O layer by ion implantation process. The atomic percentages of O in the Al—O gradient layer gradually increases from the side of Al—O gradient layer near the aluminum or aluminum alloy substrate to the other side of Al—O gradient layer, away from aluminum or aluminum alloy substrate. Therefore the housing has a high corrosion resistance. A method for making the housing is also provided.

Abstract: A housing is provided which includes an aluminum or aluminum alloy substrate, an aluminum layer and a corrosion resistant layer formed on the aluminum or aluminum alloy substrate in that order. The corrosion resistant layer is an Al—O layer. Then, La ions are implanted in the Al—O layer by ion implantation process. The atomic percentages of O in the Al—O gradient layer gradually increase from the side of Al—O gradient layer near the aluminum or aluminum alloy substrate to the other side of Al—O gradient layer, away from aluminum or aluminum alloy substrate. Therefore the housing has a high corrosion resistance. A method for making the housing is also provided.

Abstract: A method of magnetron sputtering, comprises rotating a magnet of a magnetron with an angular frequency ?, and, during sputtering of material from a source of the magnetron onto a substrate, periodically modulating a power level applied to the source with at least a component comprising a frequency f which is a harmonic of the angular frequency ? of rotation of the magnet other than the first harmonic.

Abstract: A substrate having a coating is disclosed. The coating is formed of a plurality of layers. At least one of the layers includes a super alloy and at least two additional layers including silver. A coating for a substrate is also disclosed. A method of applying a coating to a substrate is further disclosed.

Abstract: The method of making devices is disclosed herein. More particularly, a method of manufacturing a device, comprises: vacuum depositing a device-forming metal onto an unpatterned, exterior surface of a generally cylindrical substrate to form a generally tubular, unpatterned crystalline metal film under at least one vacuum deposition process condition selected from at least one of chamber pressure, deposition pressure, and partial pressure of a process gas, said at least one process condition optimized to substantially eliminate formation of chemical and intra- and intergranular precipitates in the bulk material; and removing the deposited generally tubular, unpatterned crystalline metal film from the generally cylindrical substrate.

Abstract: A housing is provided which includes an aluminum or aluminum alloys substrate, an aluminum layer and a corrosion resistant layer formed on the aluminum or aluminum alloys substrate in that order. The corrosion resistant layer is an Al—O—N layer. Then, La ions is implanted in the Al—O—N layer by ion implantation process. The atomic percentages of N and O in the Al—O—N gradient layer gradually increase from the bottom of the layer near the aluminum or aluminum alloys substrate to the top of the layer away from aluminum or aluminum alloys substrate by physical vapor deposition. The housing has a higher corrosion resistance. A method for making the housing is also provided.

Abstract: A method for producing a polarizing element includes the steps of: forming an island-shaped film of a metal halide on a glass substrate; forming needle-shaped particles of the metal halide by stretching the glass substrate through heating to elongate the island-shaped film; and forming needle-shaped metal particles composed of a metal by reducing the metal halide of the needle-shaped particles, wherein the metal halide is deposited on the glass substrate by a reactive physical vapor deposition method.

Abstract: A watch cover glass having high hardness and excellent abrasion, and also having flaw resistance and antireflection function even after being used for a long period of time. The watch cover glass comprises a transparent substrate and, provided on at least one surface of the substrate, an antireflection film having a lamination structure that a SiON film (SiO2 and Si3N4 mixed film) and a Si3N4 film are laminated and the outermost layer is the SiON film. Accordingly, the proper antireflection effect can be obtained, the hardness of the antireflection film is increased and the abrasion resistance is remarkably increased. As a result, even after being used for a long period of time, the surface of the antireflection film is not finely flawed and is not peeled off, and it hardly occurs that the hands or dial plate are invisible due to surface mist and the antireflection function can be maintained.

Abstract: A sampling cone of a mass spectrometer is disclosed having a metallic boride coating such as titanium diboride.

Abstract: A method, comprising: generating a vapour of a material from a source of said material comprising a plurality of separate solid pieces of said material supported on a surface of a base in a configuration in which said plurality of solid pieces of said target material are arranged at two or more levels to cover the whole of said surface of said base whilst providing a gap between adjacent pieces at the same level; and depositing said material from said vapour onto a substrate.

Abstract: Embodiments of process kit shields and physical vapor deposition (PVD) chambers incorporating same are provided herein. In some embodiments, a process kit shield for use in depositing a first material in a physical vapor deposition process may include an annular body defining an opening surrounded by the body, wherein the annular body is fabricated from the first material, and an etch stop coating formed on opening-facing surfaces of the annular body, the etch stop coating is fabricated from a second material that is different from the first material, the second material having a high etch selectivity with respect to the first material.

Abstract: Embodiments of the present invention provide methods and apparatuses using sputtering from a mosaic sputtering target for depositing layers onto a substrate, and provide the capability of depositing layers onto site isolated regions of the substrate in a combinatorial manner. A sputtering source is provided including a sputtering target comprising a first region having a first composition, and a second region having a second composition. A selection mechanism is capable of selecting a composition of emitted material from the sputtering source that can range from 0% to 100% of the first composition and from 0% to 100% of the second composition. The selection mechanism can comprise a movable magnetron or a moveable aperture.

Abstract: A rare earth sintered magnet as an anisotropic sintered body comprising Nd2Fe14B crystal phase as primary phase and having the composition R1aTbMcSidBe wherein R1 is a rare earth element inclusive of Sc and Y, T is Fe and/or Co, H is Al, Cu, Zn, In, P, S, Ti, V, Cr, Mn, Ni, Ga, Ge, Zr, Nb, Mo, Pd, Ag, Cd, Sn, Sb, Hf, Ta, or W, “a” to “e” are 12?a?17, 0?c?10, 0.3?d?7, 5?e?10, and the balance of b, wherein Dy and/or Tb is diffused into the sintered body from its surface.

Abstract: The present invention relates to a glass product, comprising a glass substrate with a transparent and conductive indium tin oxide layer having a covering layer, which forms a redox barrier for the indium tin oxide layer, wherein the indium tin oxide layer is obtained by pulsed, highly ionizing high-power magnetron sputtering (HPPMS) in which—the pulses of the magnetron have a peak power density greater than 1.5 kW/cm2,—the pulses of the magnetron have a time duration that is ?200 ?s, and—the mean current flow density rise upon ignition of the plasma within a time interval that is ?0.025 ms is at least 106 ?(ms cm2), and the indium tin oxide layer has a crystalline structure, in such a way that the (222)-reflection of an X-ray diffraction spectrum after the production of the indium tin oxide layer is shifted relative to the powder spectrum of indium tin oxide by a maximum of 1 degree, preferably by 0.3 degrees to 0.

Abstract: a composite dielectric thin film capable of high dielectric constant, low leakage current characteristics, and high dielectric breakdown voltage while being deposited at a room temperature, a capacitor and a field effect transistor (FET) using the same, and their fabrication methods. The composite dielectric thin film is deposited at a room temperature or less than 200° C. and comprises crystalline or amorphous insulating filler uniformly distributed within an amorphous dielectric matrix or within an amorphous and partially nanocrystalline dielectric matrix.

Abstract: Bone graft materials include a bone-grafting material, which encourages regeneration of a missing bone tissue while being absorbed by the missing bone tissue, and a coating material, which is composed of at least one selected from the group consisting of magnesium, calcium hydroxyapatite, and mixtures thereof.

Abstract: A method for producing a polarizing element includes the steps of: forming a coating film of a metal on a glass substrate; forming an island-shaped film composed of a metal halide on the glass substrate by partially removing the coating film and also halogenating the metal; forming needle-shaped particles of the metal halide by stretching the glass substrate through heating to elongate the island-shaped film; and forming needle-shaped metal particles composed of a metal by reducing the metal halide of the needle-shaped particles.

Abstract: A piezoelectric thin film element includes a vibration plate, a lower electrode provided on the vibration plate and made of a conductive oxide, a piezoelectric thin film provided on the lower electrode and made of a polycrystalline substance, and an upper electrode provided on the piezoelectric thin film, wherein the lower electrode includes a titanium oxide film formed on the vibration plate, a platinum film formed on the titanium oxide film, and a conductive oxide film formed on the platinum film and, the platinum film and the conductive oxide film being a solid film with no holes.

Abstract: There are provided a method for manufacturing a Si(1-v-w-x)CwAlxNv substrate having a reduced number of cracks and high processability, a method for manufacturing an epitaxial wafer, a Si(1-v-w-x)CwAlxNv substrate, and an epitaxial wafer. A method for manufacturing a Si(1-v-w-x)CwAlxNv substrate 10a includes the following steps. First, a Si substrate 11 is prepared. A Si(1-v-w-x)CwAlxNv layer (0<v<1, 0<w<1, 0<x<1, and 0<v+w+x<1) is then grown on the Si substrate at a temperature below 550° C.