Abstract: A method of manufacturing a waveguide eliminates a prior art reflow step and introduces certain new steps that permit fabricating of an ultra-low loss waveguide element on a silicon chip. The ultra-low loss waveguide element may be adapted to fabricate a number of devices, including a wedge resonator and a ultra-low loss optical delay line having an extended waveguide length.

Abstract: Provided is a method of manufacturing a semiconductor device capable of preventing a relative displacement of the positions between a range where impurity ions are injected and a range where charged particles are injected. The method of manufacturing the semiconductor device includes: irradiating impurity ions in a state in which a mask is disposed between an impurity ion irradiation apparatus and a semiconductor substrate; and irradiating charged particles to form a short carrier lifetime region, in a state in which the mask is disposed between a charged particle irradiation apparatus and the semiconductor substrate. A relative positional relationship between the mask and the semiconductor substrate is not changed from a beginning of one of the irradiating the impurity ions and the irradiating the charged particles to a completion of both of the irradiating the impurity ions and the irradiating the charged particles.

Abstract: A controlled switching memristor includes a first electrode, a second electrode, and a switching layer positioned between the first electrode and the second electrode. The switching layer includes a material to switch between an ON state and an OFF state, in which at least one of the first electrode, the second electrode, and the switching layer is to generate a permanent field within the memristor to enable a speed and an energy of switching from the ON state to the OFF state to be substantially symmetric to a speed and energy of switching from the OFF state to the ON state.

Abstract: A method and apparatus are disclosed for reducing stiction in MEMS devices. The method comprises patterning a CMOS wafer to expose Titanium-Nitride (TiN) surface for a MEMS stop and patterning the TiN to form a plurality of stop pads on the top metal aluminum surface of the CMOS wafer. The method is applied for a moveable MEMS structure bonded to a CMOS wafer. The TiN surface and/or plurality of stop pads minimize stiction between the MEMS structure and the CMOS wafer. Further, the TiN film on top of aluminum electrode suppresses the formation of aluminum hillocks which effects the MEMS structure movement.

Abstract: An apparatus for cooling a semiconductor element is provided. The apparatus can include an electron emitter configured to emit electrons such that at least some of the emitted electrons become attached to air particulates and an air accelerator configured to generate an electric field that accelerates the air particulates toward the air accelerator to create an air flow over at least a portion of the semiconductor element. The air flow carries heat away from the at least a portion of the semiconductor element.

Abstract: A spin-torque magnetoresistive memory element has a high magnetoresistance and low current density. A free magnetic, layer is positioned between first and second spin polarizers. A first tunnel barrier is positioned between the first spin polarizer and the free magnetic layer and a second tunnel barrier is positioned between the second spin polarizer and the free magnetic layer. The magnetoresistance ratio of the second tunnel barrier has a value greater than double the magnetoresistance ratio of the first tunnel barrier.

Abstract: A semiconductor device includes a semiconductor element, a connection electrode formed on the semiconductor element, and alignment marks formed on the semiconductor element. At least one of the alignment marks is made of a magnetic material.

Abstract: Systems and methods for fabricating a multi-axis sensor are provided. In one implementation, a method comprises: fabricating a first die having a first active surface with first application electronics; fabricating a second die having a second active surface with second application electronics and a plurality of electrical connections that extend from the second application electronics to a side surface interface of the second die that is adjacent to the second active surface; aligning the side surface interface to be coplanar with the first active surface; and forming at least one electrical connection between the plurality of electrical connections and the first active surface.

Abstract: A switching device including a first dielectric layer having a first top surface, two conductive features embedded in the first dielectric layer, each conductive feature having a second top surface that is substantially coplanar with the first top surface of the first dielectric layer, and a set of discrete islands of a low diffusion mobility metal between the two conductive features. The discrete islands of the low diffusion mobility metal may be either on the first top surface or embedded in the first dielectric layer. The electric conductivity across the two conductive features of the switching device increases when a prescribed voltage is applied to the two conductive features. A method of forming such a switching device is also provided.

Abstract: The ridge semiconductor laser is a semiconductor laser in which a carrier stopper layer made of an AlInAs compound, a clad layer made of an AlGaInAs compound, and an etching stopper layer made of an InGaAsP compound are stacked in sequence on one side of an active layer made of an AlGaInAs compound. The ridge semiconductor laser is provided with a ridge waveguide including, in a layer made of an InP compound, a diffraction grating made of an InGaAsP compound on the opposite side of the clad layer of the etching stopper layer.

Abstract: The design and fabrication of ultrathin poly-3-hexyl thiophene (P3HT) film based amine sensors are described herein. Ultrathin P3HT monolayer films can be built on a patterned flexible n-octadecylphosphonic acid (ODPA)/Al2O3/PET substrate, forming a flexible polymer thin film transistor according to a solution process. The mechanism of the sensor is based on the interaction of amine molecules with the surface of the P3HT monolayer. The interaction of amine molecules with the surface of the P3HT monolayer can affect the current density of the PTFT, and the change in current density can indicate the presence of amine molecules in the surroundings. The amine sensors described herein can easily detect amine molecules in a parts per billion (ppb) range. The amine sensors can be utilized, for example, as disposable sensors within food packaging to ensure the safety of the packaged food.

Abstract: A method of making a semiconductor optical integrated device includes the steps of forming, on a substrate, a plurality of semiconductor integrated devices including a first optical semiconductor element having a first bonding pad and a second optical semiconductor element; forming a plurality of bar-shaped semiconductor optical integrated device arrays by cutting the substrate, each of the semiconductor optical integrated device arrays including two or more semiconductor optical integrated devices; alternately arranging the plurality of semiconductor optical integrated device arrays and a plurality of spacers in a thickness direction of the substrate so as to be fixed in place; and forming a coating film on a facet of the semiconductor optical integrated device array. Furthermore, the spacer has a movable portion facing the first bonding pad, the movable portion protruding toward the first bonding pad and being displaceable in a protruding direction.

Abstract: A method for manufacturing a quantum cascade laser includes the steps of forming a semiconductor stacked structure including a first semiconductor region and a second semiconductor region; forming an etching mask having a striped pattern on the second semiconductor region; forming a semiconductor mesa structure having a mesa shape in cross section by etching the first and second semiconductor regions using the etching mask; forming an insulating layer over a top portion and side surfaces of the semiconductor mesa structure and the first semiconductor region; forming an opening in a portion of the insulating layer that is disposed on the top portion of the semiconductor mesa structure; and forming an electrode over the inside of the opening of the insulating layer, the top portion and side surfaces of the semiconductor mesa structure, and the first semiconductor region.

Abstract: Provided are a semiconductor laser manufacturing method and a semiconductor laser with a low device resistance. First, an active layer is deposited above a GaN substrate of a first conductivity type. A first guide layer made of GaN of a second conductivity type is deposited above the active layer. An AlN layer is deposited on the first guide layer. An opening is formed in the AlN layer. A first cladding layer made of a group-III nitride semiconductor of the second conductivity type is formed on the AlN layer and the first guide layer exposed through the opening such that a first growth rate at a start of growth on the first guide layer exposed through the opening becomes greater than a second growth rate at a start of growth on the AlN layer. A contact layer of the second conductivity type is formed on the first cladding layer.

Abstract: Methods for repairing low-k dielectrics using a plasma immersion carbon doping process are provided herein. In some embodiments, a method of repairing a low-k dielectric material disposed on a substrate having one or more features disposed through the low-k dielectric material may include depositing a conformal oxide layer on the low-k dielectric material and within the one or more features; and doping the conformal oxide layer with carbon using a plasma doping process.

Abstract: A metal electrically programmable fuse (“eFuse”) includes a metal strip, having a strip width, of a metal line adjoined to wide metal line portions, having widths greater than the metal strip width, at both ends of the metal strip. The strip width can be a lithographic minimum dimension, and the ratio of the length of the metal strip to the strip width is greater than 5 to localize heating around the center of the metal strip during programming. Localization of heating reduces required power for programming the metal eFuse. Further, a gradual temperature gradient is formed during the programming within a portion of the metal strip that is longer than the Blech length so that electromigration of metal gradually occurs reliably at the center portion of the metal strip. Metal line portions are provides at the same level as the metal eFuse to physically block debris generated during programming.

Abstract: In a specific embodiment, the present invention provides an integrated circuit device. The device includes a base substrate having a surface region and an interlayer dielectric material overlying the surface region. The device also has a thickness of single crystal silicon material overlying the interlayer dielectric material. In one or more embodiments, the thickness of single crystal silicon material has a front region and a backside region. The front region faces the interlayer dielectric material. In a preferred embodiment, the device has a plurality of transistor devices spatially arranged in the thickness of silicon crystal silicon material. Each of the transistor devices has a gate structure within a region of the interlayer dielectric material. The device also has an enclosure housing configured to form a cavity between the backside region of the thickness of silicon material and an upper inside region of the enclosure housing.

Abstract: The invention provides a TMR read sensor with low-contact-resistance metal/metal, metal/oxide and oxide/metal interfaces. The low-contact-resistance metal/metal interfaces in a reference or sense layer structure are in-situ formed in a high-vacuum deposition module of a sputtering system, without exposures to low vacuum in a transfer module and damages caused by a plasma treatment conducted in an etching module. The low-contact-resistance metal/oxide interface is formed by utilizing a thin Co—Fe—B reference layer and a thick Co—Fe reference layer to reduce boron diffusion and segregation caused by annealing. The low-contact-resistance oxide/metal interface is formed by replacing a Co—Fe—B sense layer with a Co-rich Co—Fe sense layer to eliminate boron diffusion and segregation caused by annealing. With the low-contact-resistance metal/metal, metal/oxide and oxide/metal interfaces, the TMR read sensor exhibits a junction resistance-area product of below 0.

Abstract: An ultra low-k dielectric material layer is formed on a semiconductor substrate. In one embodiment, a grid of wires is placed at a distance above a top surface of the ultra low-k dielectric material layer and is electrically biased such that the total electron emission coefficient becomes 1.0 at the energy of electrons employed in electron beam curing of the ultra low-k dielectric material layer. In another embodiment, a polymeric conductive layer is formed directly on the ultra low-k dielectric material layer and is electrically biased so that the total electron emission coefficient becomes 1.0 at the energy of electrons employed in electron beam curing of the ultra low-k dielectric material layer. By maintaining the total electron emission coefficient at 1.0, charging of the substrate is avoided, thus protecting any device on the substrate from any adverse changes in electrical characteristics.

Abstract: A method of bonding a semiconductor substrate in which a first semiconductor substrate is bonded with a second semiconductor substrate by eutectic bonding with pressurization and heating, an aluminum containing layer primarily made of aluminum and a germanium layer in a polymer state being interposed between a bonding surface of the first semiconductor substrate and a bonding surface of the second semiconductor substrate, the method including a step of: setting a weight ratio of the germanium layer to an aluminum containing layer to be eutectic alloyed is between 27 wt % to 52 wt %.

Abstract: A semiconductor device having a MTJ device excellent in operating characteristics and a manufacturing method therefor are provided. The MTJ device is formed of a laminated structure which is obtained by laminating a lower magnetic film, a tunnel insulating film, and an upper magnetic film in this order. The lower and upper magnetic films contain noncrystalline or microcrystalline ferrocobalt boron (CoFeB) as a constituent material. The tunnel insulating film contains aluminum oxide (AlOx) as a constituent material. A CAP layer is formed over the upper magnetic film and a hard mask is formed over the CAP layer. The CAP layer contains a substance of crystalline ruthenium (Ru) as a constituent material and the hard mask contains a substance of crystalline tantalum (Ta) as a constituent material. The film thickness of the hard mask is larger than that of the CAP layer.

Abstract: A light powered barrier for cooling a substrate includes a thermo-conductive layer for contacting the substrate, a first P-type layer disposed atop the thermo-conductive layer, a first N-type layer disposed over the first P-type layer and a thermoelectrically conductive insert that conducts heat from the thermo-conductive layer and electrically conducts electrons and holes from the first P-type layer and the first N-type layer.

Abstract: A barrier film for an electronic device, the barrier film including: a resin film; a layer-by-layer stack portion including a tabular inorganic particle layer and a binder layer which are alternately disposed on the resin film and are oppositely charged; and a filling portion that fills a defect portion of the tabular inorganic particle layer wherein the defect portion is a portion of the tabular inorganic particle layer where a tabular inorganic particle of the tabular inorganic particle layer is not present.

Abstract: A MEMS accelerometer uses capacitive sensing between two electrode layers. One of the electrode layers has at least four independent electrodes arranged as two pairs of electrodes, with one pair aligned orthogonally to the other such that tilting of the membrane can be detected as well as normal-direction movement of the membrane. In this way, a three axis accelerometer can be formed from a single suspended mass, and by sensing using a set of capacitor electrodes which are all in the same plane. This means the fabrication is simple and is compatible with other MEMS manufacturing processes, such as MEMS microphones.

Abstract: Provided is a silicon wafer which is stabilized in quality exerting no adverse influence on device characteristics and manufactured by restricting a boron contamination from the environment, and a manufacturing process therefor. Concretely, the silicon wafer is characterized by an attached boron amount thereon being 1×1010 atoms/cm2 or less. In order to manufacture such a wafer as contains a small amount of boron attached on the wafer surface, the wafer is treated in an atmosphere of boron concentration of 15 ng/m3 or less. Boron-less filters and boron adsorbing filters are used as filters in a clean room and the like so as to lower the boron concentration in the atmosphere.

Abstract: A carrier for effectuating semiconductor processing on a non-planar substrate is disclosed. The carrier is configured for holding at least one non-planar substrate throughout a semiconductor processing step and concurrently rotating non-planar substrates as they travel down a translational path of a processing chamber. As the non-planar substrates simultaneously rotate and translate down a processing chamber, the rotation exposes the whole or any desired portion of the surface area of the non-planar substrates to the deposition process, allowing for uniform deposition as desired. Alternatively, any predetermined pattern is able to be exposed on the surface of the non-planar substrates. Such a carrier effectuates manufacture of non-planar semiconductor devices, including, but not limited to, non-planar light emitting diodes, non-planar photovoltaic cells, and the like.

Abstract: Embodiments disclosed herein generally relate to a process of depositing a transparent conductive oxide layer over a substrate. The transparent oxide layer is sometimes deposited onto a substrate for later use in a solar cell device. The transparent conductive oxide layer may be deposited by a “cold” sputtering process. In other words, during the sputtering process, a plasma is ignited in the processing chamber which naturally heats the substrate. No additional heat is provided to the substrate during deposition such as from the susceptor. After the transparent conductive oxide layer is deposited, the substrate may be annealed and etched, in either order, to texture the transparent conductive oxide layer. In order to tailor the shape of the texturing, different wet etch chemistries may be utilized. The different etch chemistries may be used to shape the surface of the transparent conductive oxide and the etch rate.

Abstract: A semiconductor structure and a method for operating the same are provided. The semiconductor structure includes a substrate, a first doped region, a second doped region, a third doped region, a first trench structure and a second gate structure. The first doped region is in the substrate. The first doped region has a first conductivity type. The second doped region is in the first doped region. The second doped region has a second conductivity type opposite to the first conductivity type. The third doped region having the first conductivity type is in the second doped region. The first trench structure has a first gate structure. The first gate structure and the second gate structure are respectively on different sides of the second doped region.

Abstract: The invention provides a nanolithographic method, comprising: (i) providing a substrate; (ii) providing a nanoscopic tip coated with a patterning compound; (iii) contacting the coated tip with the substrate so that the patterning compound is applied to the substrate to produce a desired pattern; and (iv) wherein the patterning compound is anchored to the substrate.

Abstract: Provided is a method of producing a semiconductor wafer. The method includes forming an alignment mark on a base wafer, forming, on the base wafer in a region that includes the alignment mark, an inhibition layer for inhibiting crystal growth after forming the alignment mark, forming, in a region of the inhibition layer where no alignment mark is provided, an opening in which the base wafer is exposed, on the basis of information that indicates a location where the opening is to be formed with reference to the position of the alignment mark, and growing a semiconductor crystal inside the opening.

Abstract: One embodiment of the present inventions sets forth a method for decreasing a temperature coefficient of frequency (TCF) of a MEMS resonator. The method comprises lithographically defining slots in the MEMS resonator beams and filling the slots with a compensating material (for example, an oxide) wherein the temperature coefficient of Young's Modulus (TCE) of the compensating material has a sign opposite to a TCE of the material of the resonating element.

Abstract: A micro-electromechanical systems (MEMS) switch having a thermally tolerant anchor configuration is provided. The MEMS switch includes a substrate onto which first and second conductive pads are formed. A conductive cantilever beam having a first end portion, a middle portion, a second end portion, a top surface, and a bottom surface includes an internal surface that defines an open space through the first end portion. A conductive anchor coupled to the internal surface of the first end portion extends through the open space and is coupled to the first conductive pad such that the bottom surface of the second end portion of the conductive cantilever beam is suspended above the second conductive pad by a predetermined distance. The MEMS switch also includes a conductive actuator plate formed on the substrate at a location beneath the middle portion of the conductive cantilever beam and between the first and second conductive pads.

Abstract: Adverse effects when a carrier is open, such as particles adhesion to the substrate or natural oxidation film deposits on the substrate, as well as a rise in oxygen concentration and contamination of the substrate transfer chamber are prevented. Semiconductor manufacturing apparatus includes a carrier in which a cover unit is provided on a substrate loading/unloading opening for loading and unloading a substrate, a carrier open/close chamber continuously arranged to the carrier, a substrate transfer chamber continuously arranged to the carrier open/close chamber, a substrate processing chamber continuously arranged to the substrate transfer chamber, an exhaust means for exhausting the atmosphere in the carrier open/close chamber by suction, and an exhaust quantity adjuster means for adjusting the suction exhaust quantity of the exhaust means.

Abstract: Processes and fixtures for producing electromechanical devices, and particularly three-dimensional electromechanical devices such as inertial measurement units (IMUs), through the use of a fabrication process and a three-dimensional assembly process that entail joining single-axis device-IC chips while positioned within a mounting fixture that maintains the orientations and relative positions of the chips during the joining operation.

Abstract: An electronic MEMS device is formed by a chip having with a main face and bonded to a support via an adhesive layer. A cavity extends inside the chip from its main face and is closed by a flexible film covering the main face of the chip at least in the area of the cavity. The support has a depressed portion facing the cavity and delimited by a protruding portion facing the main face of the chip. Inside the depressed portion, the adhesive layer has a greater thickness than the projecting portion so as to be able to absorb any swelling of the flexible film as a result of the expansion of the gas contained inside the cavity during thermal processes.

Abstract: A phase change random access memory device includes a bottom electrode contact formed within a bottom electrode contact hole, a phase-change material pattern formed to surround a side of an upper portion of the bottom electrode contact, and an insulating layer buried within the phase-change material pattern and formed on an upper surface of the bottom electrode contact.

Abstract: A MTJ for a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/Ni)n composition or the like where n is from 2 to 30. The seed layer is preferably NiCr, NiFeCr, Hf, or a composite thereof with a thickness from 10 to 100 Angstroms. Furthermore, a magnetic layer such as CoFeB may be formed between the laminated layer and a tunnel barrier layer to serve as a transitional layer between a (111) laminate and (100) MgO tunnel barrier. There may be a Ta insertion layer between the CoFeB layer and laminated layer to promote (100) crystallization in the CoFeB layer. The laminated layer may be used as a reference layer, dipole layer, or free layer in a MTJ. Annealing between 300° C. and 400° C. may be used to further enhance PMA in the laminated layer.

Abstract: A spintronic device and a method for making said spintronic device. The spintronic device includes an epitaxial crystalline ferromagnetic oxide formed directly on the semiconductor material thereby allowing spin-polarized current to be efficiently injected from the ferromagnetic oxide into the semiconductor material. A host crystal lattice includes multiple sets of stacked oxide layers of material A and B of a perovskite structure with a formula of ABO3. After an oxide layer of B is grown, magnetic ions are introduced to intermix with the B material, which may replace some of the ions of the B material. The process of growing additional stacked oxide layers of material A and B and introducing further magnetic ions after the deposition of the oxide layer of B continues until enough magnetic ions are sufficiently close to one another that they align in the same direction thereby forming a ferromagnetic oxide on the semiconductor material.

Abstract: Acetylene is treated to remove some residual storage solvent that may be present with the acetylene in a source of acetylene such as a container. Such treatment may be performed prior to supplying the acetylene to a deposition chamber or other reactor where acetylene is a reactant. After treatment, the acetylene gas stream has a relatively constant concentration of storage solvent, regardless of how much acetylene has been released from the acetylene source. The treatment may involve condensing the storage solvent from the gas stream at a certain temperature and separating the storage solvent from the gas stream.

Abstract: A method of forming a microphone forms a backplate, and a flexible diaphragm on at least a portion of a wet etch removable sacrificial layer. The method adds a wet etch resistant material, where a portion of the wet etch resistant material is positioned between the diaphragm and the backplate to support the diaphragm. Some of the wet etch resistant material is not positioned between the diaphragm and backplate. The method then removes the sacrificial material before removing any of the wet etch resistant material added during the prior noted act of adding. The wet etch resistant material then is removed substantially in its entirety after removing at least part of the sacrificial material.

Abstract: A method of manufacturing a magnetic memory element includes the steps of forming a permanent magnetic layer on top a bottom electrode, forming a pinning layer on top the permanent magnetic layer, forming a magnetic tunnel junction (MTJ) including a barrier layer on top of the pinning layer, forming a top electrode on top of the MTJ, forming a hard mask on top of the top electrode, and using the hard mask to perform a series of etching processes to reduce the width of the MTJ and the top electrode to substantially a desired width, where one of these etching processes is stopped when a predetermined material in the pinning layer is detected thereby avoiding deposition of metal onto the barrier layer of the etching process thereby preventing shorting.

Abstract: There is provided a method for manufacturing a semiconductor device, comprising simultaneously or alternately exposing a substrate, which has two or more kinds of thin films having different elemental components laminated or exposed; and performing different modification treatments to the thin films respectively.

Abstract: Semiconductor-centered MEMS (100) integrates the movable MEMS parts, such as mechanical elements, flexible membranes, and sensors, with the low-cost device package, and leaving only the electronics and signal-processing parts in the integrated circuitry of the semiconductor chip. The package is substrate-based and has an opening through the thickness of the substrate. Substrate materials include polymer tapes with attached metal foil, and polymer-based and ceramic-based multi-metal-layer dielectric composites with attached metal foil. The movable part is formed from the metal foil attached to a substrate surface and extends at least partially across the opening. The chip is flip-assembled to span at least partially across the membrane, and is separated from the membrane by a gap.

Abstract: A system includes a semiconductor device. The semiconductor device includes a first semiconductor layer comprising first transistors, wherein the first transistors are interconnected by at least one metal layer comprising aluminum or copper. The second mono-crystallized semiconductor layer includes second transistors and is overlaying the at least one metal layer, wherein the second mono-crystallized semiconductor layer is less than 150 nm in thickness, and at least one of the second transistors is an N-type transistor and at least one of the second transistors is a P-type transistor.

Abstract: This device includes a dielectric stack including at least one electret layer (2E), and two electrodes (16, 20) on two opposite faces (18, 22) of the stack. The electret is mineral. The device notably applies to the field of telecommunications.

Abstract: A wire (24) and a pixel electrode (25) are formed on a surface of a flat supporting substrate (21) which surface is opposite to a surface on which a TFT (16) is formed. Accordingly, it is possible to provide an active matrix substrate (2) which makes it possible to suppress a decline in yield.

Abstract: A microlaser system, including a microlaser, having an elongated generally cylindrical substrate, a thin dopant film encircling at least a portion of the substrate, and a pumping laser positioned to shine onto the thin film. The thin film is between about 2 and about 10 microns thick. When the pumping laser shines on the thin film, the thin film lases in whispering gallery mode. The dopant is preferably selected from the group including transition metals and rare-earth elements. In a most preferred embodiment, the thin film is titanium-doped amorphous aluminum nitride.

Abstract: An impurity-doped PZT film in an amorphous state doped with La, Ca, Sr, Si, Nb and/or the like is formed on a Pt film composing a bottom electrode film. Next, crystallization annealing for the impurity-doped PZT film is performed. Next, a PZT film is formed on the impurity-doped PZT film by an MOCVD method. Thereafter, an IrOX film, an IrOY film and an Ir film are formed on the PZT film.

Abstract: A yellow Light Emitting Diode (LED) with a peak emission wavelength in the range 560-580 nm is disclosed. The LED is grown on one or more III-nitride-based semipolar planes and an active layer of the LED is composed of indium (In) containing single or multi-quantum well structures. The LED quantum wells have a thickness in the range 2-7 nm. A multi-color LED or white LED comprised of at least one semipolar yellow LED is also disclosed.

Abstract: When the initial displacement greatly varies among cells in an element, there is a need to reduce a bias voltage to be applied between electrodes. This decreases the sensitivity. An electromechanical transducer of the present invention includes an element having a plurality of cells. Each of the cells includes a first electrode and a second electrode that are provided with a cavity being disposed therebetween. A groove is provided at a position at a predetermined distance from the cavity of the cell on the outermost periphery of the element.