Abstract: Semiconductor light converting constructions are disclosed. The semiconductor light converting construction includes a first semiconductor layer for absorbing at least a portion of light at a first wavelength; a semiconductor potential well for converting at least a portion of the light absorbed at the first wavelength to light at a longer second wavelength; and a second semiconductor layer that is capable of absorbing at least a portion of light at the first wavelength. The first semiconductor layer has a maximum first index of refraction at the second wavelength. The second semiconductor layer has a second index of refraction at the second wavelength that is greater than the maximum first index of refraction.

Abstract: The present invention provides a gallium nitride based compound semiconductor light-emitting device having high light emission efficiency and a low driving voltage Vf. The gallium nitride based compound semiconductor light-emitting device includes a p-type semiconductor layer, and a transparent conductive oxide film that includes dopants and is formed on the p-type semiconductor layer. A dopant concentration at an interface between the p-type semiconductor layer and the transparent conductive oxide film is higher than the bulk dopant concentration of the transparent conductive oxide film. Therefore, the contact resistance between the p-type semiconductor layer and the transparent conductive oxide film is reduced.

Abstract: By a light emitting device including a light emitting element, and a semiconductor phosphor microparticle having a core/shell structure having a shell part absorbing at least a part of the light emitted by the light emitting element, and an image display device including a light emitting element, and a semiconductor phosphor microparticle having a core/shell structure having a shell part that absorbs at least a part of the light emitted by the light emitting element, a light emitting device and an image display device having high luminous efficiency are provided.

Abstract: Provided is a package of a light emitting diode. The package includes a metal plate, a light-emitting diode chip, an insulating layer, a lead frame, a reflective coating layer, and a molding material. The light-emitting diode chip is surface-mounted on the metal plate, and the insulating layer is formed on the metal plate and is separated from the light-emitting diode chip. The lead frame is provided on the insulating layer, the reflective coating layer is formed on the lead frame, and the molding material molds the light-emitting diode chip in a predetermined shape.

Abstract: A semiconductor light emission device is disclosed. The semiconductor light emission device includes: a substrate; a current concentration preventing pattern formed in a mesh net shape on the substrate; an n-type clad layer formed on the substrate loaded with the current concentration preventing pattern; an active layer and a p-type clad layer sequentially formed on the n-type clad layer; an n-type electrode formed on a part of the n-type clad layer which is exposed by partially etching the p-type clad layer and active layer; and a p-type electrode formed on the p-type clad layer. The current concentration preventing pattern is formed in a double layer structure which includes a first layer formed from one material of SiO and SiN and on the substrate, and a second layer formed from a metal material and on the first layer.

Abstract: An active device array substrate including a substrate, a plurality of scan lines, a plurality of data lines, a plurality of active devices, a first passivation layer, a transparent pad layer, a plurality of color filter patterns, a second passivation layer, a plurality of pixel electrodes, and a black matrix layer is provided. Each of the active devices is electrically connected to one of the scan lines and one of the data lines, respectively. The transparent pad layer having a plurality of openings for accommodating the color filter patterns is disposed on the first passivation layer located above the scan lines and the data lines. The first passivation layer, the color filter patterns and the second passivation layer have a plurality of contact windows therein. The black matrix layer is disposed above the transparent pad layer to cover a portion of the pixel electrodes.

Abstract: An optical module is described, where the optical module installs an optical device whose identification mark is able to be distinguished even after the optical device is installed in the optical module. The identifying mark of the optical device is formed in a position able to be inspected from the direction of the normal line of the light-emitting facet of the optical device. Accordingly, the identifying mark becomes able to be identified through the lens after the optical device is installed in the package of the optical module.

Abstract: A light emitting packaged diode ids disclosed that includes a light emitting diode mounted in a reflective package in which the surfaces adjacent the diode are near-Lambertian reflectors. An encapsulant in the package is bordered by the Lambertian reflectors and a phosphor in the encapsulant converts frequencies emitted by the LED chip and, together with the frequencies emitted by the LED chip, produces white light. A substantially flat meniscus formed by the encapsulant defines the emitting surface of the packaged diode.

Abstract: Provided are optoelectronic components which include an optoelectronic device and a structure for self-aligning the optoelectronic device. Also provided are optoelectronic modules and methods of forming optoelectronic components.

Abstract: Proposed is a III-V-semiconductor-containing epitaxial substrate comprising at least one layer of porous III-V semiconductor material, together with a corresponding production method. Also specified is a component, particularly an LED, produced on the proposed epitaxial substrate, and a corresponding production method.

Abstract: An object of the present invention is to provide a light-emitting device in which plural kinds of circuits are formed over the same substrate, and plural kinds of thin film transistors are provided in accordance with characteristics of the plural kinds of circuits. An inverted-coplanar thin film transistor, an oxide semiconductor layer of which overlaps with a source and drain electrode layers, and a channel-etched thin film transistor are used as a thin film transistor for a pixel and a thin film transistor for a driver circuit, respectively. Between the thin film transistor for a pixel and a light-emitting element, a color filter layer is provided so as to overlap with the light-emitting element which is electrically connected to the thin film transistor for a pixel.

Abstract: Disclosed are a light emitting device and a light emitting device package having the same. The light emitting device includes a plurality of light emitting cells including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; a first electrode layer connected to the first conductive semiconductor layer of a first light emitting cell of the plural light emitting cells; a plurality of second electrode layers under the light emitting cells, a portion of the second electrode layers being connected to the first conductive semiconductor layer of an adjacent light emitting cells; a third electrode layer disposed under a last light emitting cell of the plural light emitting cells; a first electrode connected to the first electrode layer; a second electrode connected to the third electrode layer; an insulating layer around the first to third electrode layers; and a support member under the insulating layer.

Abstract: It is an object of the present invention to provide a semiconductor display device having an interlayer insulating film which can obtain planarity of a surface while controlling film formation time, can control treatment time of heating treatment with an object of removing moisture, and can prevent moisture in the interlayer insulating film from being discharged to a film or an electrode adjacent to the interlayer insulating film. An inorganic insulating film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover a TFT. Next, an organic resin film containing photosensitive acrylic resin is applied to the organic insulting film, and the organic resin film is partially exposed to light to be opened. Thereafter, an inorganic insulting film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover the opened organic resin film.

Abstract: A semiconductor light emitting device, includes: a stacked structural unit including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer provided therebetween; and an electrode including a first and second metal layers, the first metal layer including silver or silver alloy and being provided on a side of the second semiconductor layer opposite to the light emitting layer, the second metal layer including at least one element selected from gold, platinum, palladium, rhodium, iridium, ruthenium, and osmium and being provided on a side of the first metal layer opposite to the second semiconductor layer. A concentration of the element in a region including an interface between the first and second semiconductor layers is higher than that of the element in a region of the first metal layer distal to the interface.

Abstract: Disclosed is a method of fabricating a light emitting diode using a laser lift-off apparatus. The method includes growing an epitaxial layer including a first conductive-type compound semiconductor layer, an active layer and a second conductive-type compound semiconductor layer on a first substrate, bonding a second substrate, having a different thermal expansion coefficient from that of the first substrate, to the epitaxial layers at a first temperature of the first substrate higher than a room temperature, and separating the first substrate from the epitaxial layer by irradiating a laser beam through the first substrate at a second temperature of the first substrate higher than the room temperature but not more than the first temperature. Thus, during a laser lift-off process, focusing of the laser beam can be easily achieved and the epitaxial layers are prevented from cracking or fracture. The laser lift-off process is performed by a laser lift-off apparatus including a heater.

Abstract: A semiconductor light-emitting element array device includes a substrate; a plurality of removable layers being disposed on the substrate; and a thin-film semiconductor light-emitting device being disposed on each of the plurality of removable layers, being made of a different material from a surface material of the substrate, and having a semiconductor light-emitting element; wherein the plurality of removable layers are made of a material which is capable of being etched by a selective chemical etching process. An image exposing device includes an image exposing unit including the semiconductor light-emitting element array device. An image exposing device includes an image exposing unit including the semiconductor light-emitting element array device. An image display apparatus includes an image display unit including the semiconductor light-emitting element array device.

Abstract: An electro-optic apparatus has an electro-optic panel, driver semiconductor chips bonded onto the terminal portion of the electro-optic panel, and two protection films either or both of which are transparent, wherein the electro-optic panel is sealed by being sandwiched between the two protection films, and one protection film that covers the terminal portion has openings for exposing the driver semiconductor chips.

Abstract: A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat.

Abstract: A light-emitting diode (LED) cutting method includes the following steps: (A) positioning and retaining an LED chip or an LED epitaxial substrate on a chip retainer; (B) introducing a liquid medium to serve as a sound wave reflection layer medium between a cutting tool and the chip; (C) activating a power source to drive a magnetostrictive or piezoelectric ceramic material mounted on a machine to serve as a power source by inducing volume expansion/compression that generates up-and-down piston-like movement; and (D) operating the cutting tool of a proper shape that has a surface on which super hard micro-particles of diamond, CBN, or SiC are electroformed to carry out up-and-down piston-like reciprocal motion on the material retained on the chip retainer to drive the super hard micro-particles on the surface of the cutting tool into a pre-cut workpiece to perform breaking cutting.

Abstract: A laminate film includes a plurality of planar photovoltaic semi-transparent modules disposed one on top of another and laminated to each other. Each of the modules includes a substrate, first and second conductive layers and at least first and second semiconductor layers disposed between the conductive layers. The first and second semiconductor layers define a junction at an interface therebetween. At least one of the junctions is configured to convert a first spectral portion of optical energy into an electrical voltage and transmit a second spectral portion of optical energy to another of the junctions that is configured to convert at least a portion of the second spectral portion of optical energy into an electrical voltage.

Abstract: A method of manufacturing an imaging array includes providing a silicon tile having a first surface and a second, opposite surface. A buried dielectric layer is formed in the silicon tile between the first and second surfaces to define a bottom silicon layer between the first surface and the dielectric layer. A separation boundary is formed in the silicon tile between the second surface and the dielectric layer to define a top silicon layer between the dielectric layer and the separation boundary and a removable silicon layer between the separation boundary and the second surface. An oxide layer is formed on the first surface of the silicon tile and the silicon tile is bonded to a glass substrate at the oxide layer. The silicon tile is separated at the separation boundary to remove the removable silicon layer, exposing the top silicon layer. Semiconductive elements are formed using the exposed top silicon layer.

Abstract: The invention relates to a method for electrically contacting an arrangement of a plurality of semiconductor structures comprising contact regions therefor and emitting electromagnetic radiation when a voltage is applied thereto. According to said method, a viscous, hardenable material is applied to the arrangement of a plurality of semiconductor structures and hardened to form a material web. The invention also relates to a luminous element comprising a plurality of semiconductor structures (12) which are interconnected by means of an electrical contacting element (34) and emit visible electromagnetic radiation when a voltage is applied thereto. The electrical contacting element (34) at least partially comprises at least one material web (34) obtained by hardening a material which is viscous in its basic state.

Abstract: A semiconductor light-emitting device having high reliability is obtained while suppressing separation between a support substrate and a semiconductor element layer. This semiconductor light-emitting device includes a support substrate (1), a first bonding layer (2a) formed on the support substrate (1), a second bonding layer (2b) formed on the first bonding layer (2a), a third bonding layer (2c) formed on the second bonding layer (2b), and a semiconductor element layer (3) formed on the third bonding layer (2c). The melting point of the second bonding layer (2b) is lower than the melting points of the first bonding layer (2a) and the third bonding layer (2c).

Abstract: An electrode for use in an organic optoelectronic device is provided. The electrode includes a thin film of single-wall carbon nanotubes. The film may be deposited on a substrate of the device by using an elastomeric stamp. The film may be enhanced by spin-coating a smoothing layer on the film and/or doping the film to enhance conductivity. Electrodes according to the present invention may have conductivities, transparencies, and other features comparable to other materials typically used as electrodes in optoelectronic devices.

Abstract: A method for producing a luminous device is specified. A number of light emitting diodes each have a radiation-transmissive carrier and at least two semiconductor bodies spatially separated from one another. Each semiconductor body is provided for generating electromagnetic radiation. The semiconductor bodies can be driven separately from one another and the semiconductor bodies are arranged at the top side of the radiation-transmissive carrier on the radiation-transmissive carrier. A chip assemblage is composed of CMOS chips each of which has at least two connection locations at its top side. At least one of the light emitting diodes is connected to one of the CMOS chips. The light emitting diode is arranged, at the top side of the radiation-transmissive carrier, at the top side of the CMOS chip and each semiconductor body of the light emitting diode is connected to a connection location of the CMOS chip.

Abstract: Embodiments of the invention relate to methods and structures for fabricating semiconductor structures that include at least one bonding layer for attaching two or more elements to one another. The at least one bonding layer may be at least substantially comprised of zinc, silicon and oxygen.

Abstract: An active matrix substrate includes base substrate, gate lines, data lines, thin-film transistors and pixel electrodes. The gate lines are formed on the base substrate. The data lines are formed over the gate lines. Each of the data lines crosses all of the gate lines with an insulating film interposed therebetween. The thin-film transistors are formed over the base substrate. Each of the thin-film transistors is associated with one of the gate lines and operates responsive to a signal on the associated gate line. Each of the pixel electrodes is associated with one of the data lines and one of the thin-film transistors and is electrically connectable to the associated data line by way of the associated thin-film transistor. Each of the pixel electrodes and the associated thin-film transistor are connected together by way of a conductive member.

Abstract: A device such as a multicolor light emitting diode that emits different colors of light and that may combine the different colors emitted by individual light emitting diodes. The multicolor LED may include a common anode terminal that may be connected to each anode of the individual light emitting diodes. The multicolor LED may be a five terminal multicolor LED. Additionally, the multicolor LED may include two anode terminals, in which the first anode terminal may be a common anode terminal connected to three of the individual color LEDs and the second anode terminal may be connected to an anode of a white LED. In this embodiment, the multicolor LED may be a six terminal multicolor LED.

Abstract: A light emitting device with magnetic field includes a light emitting device, a thermal conductive material layer and a magnetic layer. The thermal conductive material layer is coupled with the light emitting device to dissipate heat generated by the light emitting device. The magnetic layer is coupled with thermal conductive material layer to produce a magnetic filed on the light emitting device.

Abstract: A semiconductor light emitting apparatus can include a housing filled with a wavelength conversion material-containing resin material which seals a semiconductor light emitting device inside the recess of the housing. A transparent resin material can be charged on the wavelength conversion material-containing resin material, and can be configured to prevent the resin materials from being detached from each other or from other portions, such as a housing. Furthermore, such a semiconductor light emitting apparatus can emit light with less color unevenness. The housing can include a first recessed portion and a second recessed portion. The second recessed portion can have a larger diameter than the first recessed portion so as to form a stepped area at the boundary therebetween. The first recessed portion is filled with the wavelength conversion material-containing resin material as a first resin.

Abstract: A semiconductor light emitting device includes a substrate, and a light emitting portion that is disposed on the substrate, and includes an active layer formed of a group III nitride semiconductor using a nonpolar plane or a semipolar plane as a growth principal surface, in which side end surfaces of the active layer are specular surfaces.

Abstract: A light-emitting device is disclosed, including a light-emitting element and a surface plasmon coupling element, having an intermediary layer connected to the light-emitting element and a metal structure on the intermediary layer, wherein the intermediary layer is conductive under low-frequency injection current and has the characteristics as dielectric material in a wavelength range 100 nm˜20000 nm.

Abstract: Diode comprising a substrate and an organic electroluminescent layer interposed between a lower electrode and an upper electrode, at least one of which electrodes is formed from a multilayer which is itself formed by the stack of adjacent sublayers made of amorphous carbon, having different refractive indices n1, n2. The amorphous carbon contains no added silicon, thereby making it possible to avoid using silane for the manufacture. The multilayer provides an electrode function, a multimirror function and an encapsulation function.

Abstract: An integrated circuit device, which can be a light emission device such as a light emitting diode (LED), comprises a substrate, a plurality of device layers formed on a first surface of the substrate, including a first device layer and a second device layer, a first electrode formed on the first device layer, and a second electrode formed on a second surface of the substrate which is parallel and opposite to the first surface of the substrate. A plurality of substantially identical such devices can formed on a semiconductor wafer, where one or both of the first and second electrodes are shared by the plurality of devices prior to dicing the wafer. All of the devices can be tested simultaneously on the wafer, prior to dicing. Formation of the electrodes on opposite sides of the substrate allow the device to be directly connected to a mounting substrate, without any wire bonding.

Abstract: A display device includes: a substrate; a pair of partition walls above the substrate; a light-emitting portion above the substrate that includes a first electrode, a second electrode, and a light-emitting layer located between the first electrode and the second electrode, the second electrode and the light-emitting layer located between the pair of partition walls; and a pixel circuit for applying a voltage to the first electrode. Each of the pair of partition walls includes a conductive portion and an insulating portion that covers side surfaces of the conductive portion for insulating the first electrode and the light-emitting layer from the conductive portion. The second electrode covers an upper surface of the conductive portion of each of the pair of partition walls and is electrically connected to the pixel circuit via the conductive portion.

Abstract: Provided are a nitride semiconductor light emitting element, including an n-type nitride semiconductor substrate including a dislocation bundle concentration region, and a nitride semiconductor stacked body having an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer in this order on the n-type nitride semiconductor substrate, the nitride semiconductor light emitting element having a dielectric region in a region of the nitride semiconductor stacked body corresponding to the dislocation bundle concentration region, an electrode for p-type provided to be in contact with a portion of the p-type nitride semiconductor layer and a portion of the dielectric region, and an electrode for n-type provided on a side of the n-type nitride semiconductor substrate opposite to a side on which the nitride semiconductor stacked body is provided, and a manufacturing method thereof.

Abstract: Disclosed is a light emitting device having a plurality of light emitting cells and a package having the same mounted thereon. The light emitting device includes a plurality of light emitting cells which are formed on a substrate and each of which has an N-type semiconductor layer and a P-type semiconductor layer located on a portion of the N-type semiconductor layer. The plurality of light emitting cells are bonded to a submount substrate. Accordingly, heat generated from the light emitting cells can be easily dissipated, so that a thermal load on the light emitting device can be reduced. Meanwhile, since the plurality of light emitting cells are electrically connected using connection electrodes or electrode layers formed on the submount substrate, it is possible to provide light emitting cell arrays connected to each other in series.

Abstract: A light emitting device may comprise a first semiconductor layer having a first and second surfaces, the first and second surfaces being opposite surfaces, the first semiconductor layer having a plurality of semiconductor columns extending from the second surface, the plurality of semiconductor columns being separated from each other; a light emitting structure formed over the first semiconductor layer, the light emitting structure including a first conductive semiconductor layer, an active layer and a second semiconductor layer, the light emitting structure having a side surface and an exposed side surface of a semiconductor column closest to the side surface of the light emitting structure being non-aligned with the side surface of the light emitting structure; and a substrate provided adjacent to the plurality of semiconductor columns.

Abstract: A light emitting device having high definition, a high aperture ratio, and high reliability is provided. The present invention achieves high definition and a high aperture ratio with a full color flat panel display using red, green, and blue color emission light by intentionally forming laminate portions, wherein portions of different organic compound layers of adjacent light emitting elements overlap with each other, without depending upon the method of forming the organic compound layers or the film formation precision.

Abstract: A method of manufacturing a light emitting device: an LED wafer having an array of LEDs formed on a surface thereof, the method comprises: a) fabricating a sheet of phosphor/polymer material comprising a light transmissive polymer material having at least one phosphor material distributed throughout its volume and in which the polymer material is transmissive to light generated by the LEDs and to light generated by the at least one phosphor material; b) selectively making apertures through the phosphor/polymer sheet at positions corresponding to electrode contact pads of the LEDs of the LED wafer; c) attaching the sheet of phosphor/polymer material to the surface of the LED wafer such that each aperture overlies a respective electrode contact pad; and d) dividing the wafer into individual light emitting devices. The method can further comprise, prior to dividing the LED wafer, cutting slots through the phosphor/polymer material that are configured to pass between individual LEDs.

Abstract: The present invention discloses a light emitting diode (LED) element and a method for fabricating the same, which can promote light extraction efficiency of LED, wherein a substrate is etched to obtain basins with inclined natural crystal planes, and an LED epitaxial structure is selectively formed inside the basin. Thereby, an LED element having several inclines is obtained. Via the inclines, the probability of total internal reflection is reduced, and the light extraction efficiency of LED is promoted.

Abstract: Disclosed is a light emitting device having a plurality of light emitting cells and a package having the same mounted thereon. The light emitting device includes a plurality of light emitting cells which are formed on a substrate and each of which has an N-type semiconductor layer and a P-type semiconductor layer located on a portion of the N-type semiconductor layer. The plurality of light emitting cells are bonded to a submount substrate. Accordingly, heat generated from the light emitting cells can be easily dissipated, so that a thermal load on the light emitting device can be reduced. Meanwhile, since the plurality of light emitting cells are electrically connected using connection electrodes or electrode layers formed on the submount substrate, it is possible to provide light emitting cell arrays connected to each other in series.

Abstract: The present invention relates to a process for fabricating light-emitting devices. More particularly, the aim of the invention is to allow the fabrication of light emitters with improved efficiency by using artificial materials, enabling antireflection or high-reflectivity treatments to be carried out. For this purpose, subwavelength structures are etched on one of the ends of an emissive cavity, enabling the external face to be controlled. The invention applies to any light emitter, and therefore notably to lasers and more particularly still to QCLs (quantum cascade lasers).

Abstract: There is provided a contact hole including a lower layer metal disposed on an insulating substrate; an insulating film disposed on the lower layer metal film and having an opening; an interlayer connection layer formed by solidifying a conductive liquid material disposed extending to cover at least the lower layer metal film exposed by the opening and an insulating film edge portion at the opening; and an upper layer metal film disposed on the interlayer connection layer so that the upper layer metal film extends across a coverage boundary region of the interlayer connection layer to come in contact with the insulating film. The film thickness of the lower layer metal film exposed by the opening is thinner than the film thickness of the lower layer metal film not exposed by the opening.

Abstract: A method for manufacturing a nitride based single crystal substrate and a method for manufacturing a nitride based semiconductor device. The method for manufacturing the nitride based single crystal substrate includes forming a nitride based single crystal layer on a preliminary substrate; forming a polymer support layer by applying a setting adhesive material having flowability on the upper surface of the nitride based single crystal layer and hardening the applied adhesive material; and separating the nitride based single crystal layer from the preliminary substrate by irradiating a laser beam onto the lower surface of the preliminary substrate. The method for manufacturing the nitride based single crystal substrate is applied to the manufacture of a nitride based semiconductor device having a vertical structure.

Abstract: A laser diode includes an active layer, a strip-shaped ridge provided above the active layer, a pair of resonator end faces sandwiching the active layer and the ridge from an extending direction of the ridge, and an upland section provided being contacted with both side faces of the ridge in at least one of the resonator end faces of the pair of resonator end face and in the vicinity thereof. A thickness from the active layer to a surface of the upland section is larger on the resonator end face side and is smaller on a central side of the ridge, and the thickness is continuously changed from a thick portion on the resonator end face side to a thin portion on the central side of the ridge.

Abstract: A high luminous flux warm white solid state lighting device with a high color rendering is disclosed. The device comprising two groups of semiconductor light emitting components to emit and excite four narrow-band spectrums of lights at high luminous efficacy, wherein the semiconductor light emitting components are directly mounted on a thermal effective dissipation member; a mixing cavity for blending the multi-spectrum of lights; a back-transferred light recycling member deposited on top of an LED driver and around the semiconductor light emitters; and a diffusive member to diffuse the mixture of output light from the solid state lighting device. The solid state lighting device produces a warm white light with luminous efficacy at least 80 lumens per watt and a color rendering index at least 85 for any lighting application.

Abstract: Provided is a light emitting device and a method of manufacturing the same. The light emitting device comprises a transparent substrate, an n-type compound semiconductor layer formed on the transparent substrate, an active layer, a p-type compound semiconductor layer, and a p-type electrode sequentially formed on a first region of the n-type compound semiconductor layer, and an n-type electrode formed on a second region separated from the first region of the n-type compound semiconductor layer, wherein the p-type electrode comprises first and second electrodes, each electrode having different resistance and reflectance.

Abstract: The present invention provides optical devices and systems fabricated, at least in part, via printing-based assembly and integration of device components. In specific embodiments the present invention provides light emitting systems, light collecting systems, light sensing systems and photovoltaic systems comprising printable semiconductor elements, including large area, high performance macroelectronic devices. Optical systems of the present invention comprise semiconductor elements assembled, organized and/or integrated with other device components via printing techniques that exhibit performance characteristics and functionality comparable to single crystalline semiconductor based devices fabricated using conventional high temperature processing methods. Optical systems of the present invention have device geometries and configurations, such as form factors, component densities, and component positions, accessed by printing that provide a range of useful device functionalities.

Abstract: There are provided a nitride semiconductor light emitting device having improved light extraction efficiency and a method of manufacturing the same. A nitride semiconductor light emitting device according to an aspect of the invention includes a light emitting lamination including first and second conductivity type nitride semiconductors and an active layer formed therebetween, first and second electrode pads electrically connected to the first and second conductivity nitride semiconductor layers, respectively, a plurality of patterns formed below the second electrode pad and having a depth reaching at least part of the first conductivity type nitride semiconductor layer, and an insulating film formed at an internal surface of the plurality of patterns to electrically insulate a region of a light emitting lamination, which is exposed through the plurality of patterns, from the second electrode pad.