Abstract: A light emitting diode device emitting at a wavelength of 390-415 nm has a bulk gallium and nitrogen containing substrate with an active region. The device has a current density of greater than about 175 Amps/cm2 and an external quantum efficiency with a roll off of less than about 5% absolute efficiency.

Abstract: The present invention provides a method for producing a Group III nitride semiconductor light-emitting device, the device including a light-emitting layer which is formed so as to contour a stripe-pattern embossment and to have a uniform thickness. In the production method, firstly, a stripe-pattern embossment having a serrated cross section is formed on one surface of a substrate. Subsequently, on the surface of the substrate on the side of the stripe-pattern embossment having a serrated cross section, an n-type layer, a light-emitting layer, and a p-type layer are sequentially deposited through reduced-pressure MOCVD so as to contour the embossment. Thus, each of the layers is formed so as to contour the embossment, and to have a stripe pattern with a serrated cross section. In this MOCVD process, the direction of gas flow is parallel with the direction of the stripe of the embossment. Thus, the light-emitting layer has uniform thickness and composition in an in-plane direction.

Abstract: A method for manufacturing a light-emitting device comprising the steps of: providing a substrate comprising a first surface and a second surface; forming a plurality of cutting lines on the substrate by a laser beam; cleaning the substrate by a chemical solution; and forming a light-emitting stack on an first surface of the substrate after cleaning the substrate.

Abstract: Embodiments of the present invention generally provide a process and apparatus for increasing the absorption coefficient of a chamber component disposed in a thermal process chamber. In one embodiment, a method generally includes providing a substrate carrier having a first surface and a second surface, the first surface is configured to support a substrate and being parallel and opposite to the second surface, subjecting the second surface of the substrate carrier to a surface treatment process to roughen the second surface of the substrate carrier, wherein the substrate carrier contains a material comprising silicon carbide, and forming an oxide-containing layer on the roughened second surface of the substrate carrier. The formed oxide-containing layer has optical absorption properties at wavelengths close to the radiation delivered from one or more energy sources used to heat the chamber component.

Abstract: A method of manufacturing a semiconductor light-emitting device which includes the steps of forming a plurality of light-emitting device sections (40), having an approximately rectangular shape in plan view, on a substrate (10) in a matrix shape, forming a first dividing groove (61) between the long sides (41) of the light-emitting device sections (40) so that the long side (41) of the light-emitting device section (40) is along an easily cleaved plane of the substrate (10), forming a second dividing groove (62), having a larger width than the width of the first dividing groove (61), between short sides (42) of the light-emitting device sections (40), and dividing the substrate (10) along a first dividing groove (61) and a second dividing groove (62) to cut out the light-emitting device section (40).

Abstract: A method of manufacturing an optical semiconductor device includes: forming a mesa structure having an n-type cladding layer, an active layer and a p-type cladding layer in this order on a substrate; forming a p-type semiconductor layer on a side face of the mesa structure and a plane area located at both sides of the mesa structure, the p-type semiconductor layer having a thickness of 5 nm to 45 nm on the plane area; and forming a current blocking semiconductor layer on the p-type semiconductor layer so as to bury the mesa structure, a product of the thickness of the p-type semiconductor layer and a concentration of p-type impurity of the p-type semiconductor layer on the plane area being 2.5×1019 nm/cm3 or less.

Abstract: To facilitate electrode connections and achieve a high light emitting efficiency, a rod-like light-emitting device includes a semiconductor core of a first conductivity type having a rod shape, and a semiconductor layer of a second conductivity type formed to cover the semiconductor core. The outer peripheral surface of part of the semiconductor core is exposed.

Abstract: An electro-optical device that drives each of plural pixels individually arranged in two dimensions so as to display information, is provided with a group of pixels displaying the information within an effective display region among the plural pixels arranged in two dimensions. A group of plural pseudo-pixels that do not contribute to the display of the information are located adjacent to a group of pixels within the effective display region. A bank layer separates a pixel in the group of the plural pseudo-pixels from a pixel in the group of pixels in the effective display region, and shields light leaked from a space between pixels located adjacently each other within the effective display region.

Abstract: An exemplary LED module includes a base, an anisotropic conductive film on the base, multiple LED dies on the anisotropic conductive film, multiple first electrodes between the base and the anisotropic conductive film, and multiple second electrodes on the LED dies. The LED dies are arranged in multiple rows by multiple columns. The first electrodes each are elongated and parallel to each other. The second electrodes each are elongated and parallel to each other. The LED dies of each column are connected to one of the first electrodes electrically. Each second electrode is electrically coupled to the LED dies of one row.

Abstract: A method for controlling color accuracy of a light-emitting semiconductor-based device, and a process for producing a light-emitting semiconductor-based device with desired color accuracy is disclosed. The color accuracy is controlled by defining a desired color accuracy of a light produced by mixing colors emitted by at least two light sources over a first range of operating conditions; determining characteristics of the light as a function of operating conditions; and establishing desired light characteristics of the at least two light sources over a second range of operating condition in accordance with the step of defining and the step of determining.

Abstract: A display apparatus including a TFT array substrate on which TFTs are formed in an array, a counter substrate disposed so as to face the TFT array substrate, and a sealing pattern for adhering the TFT array substrate and the counter substrate to each other, wherein the counter substrate has a counter electrode, and the TFT array substrate has a first conductive layer, a first insulating film formed on the first conductive layer, a second conductive layer disposed so as to intersect the first conductive layer via the first insulating film, a second insulating film formed on the second conductive layer and having at least two layers, and common electrode wiring provided below the sealing pattern and electrically connected to the counter electrode by the sealing pattern, and the sealing pattern overlaps the second conductive layer via the second insulating film.

Abstract: A substrate for an optoelectronic device, with a fabric of monofilaments and/or fibres of a polymer, which is designed for purposes of implementing and/or supporting an electrode layer, wherein the fibres have a fibre diameter of between 20 ?m and 100 ?m, in particular of between 30 ?m and 80 ?m, the fabric has mesh openings that implement an open surface area of 70% to 85%, and the fabric is provided with a coating having a transparent, electrically non-conducting polymer material such that the fibres are at least partially surrounded by the polymer material.

Abstract: According to an embodiment of the present invention, a method for manuafacturing a color electrophoretic display device includes forming a thin film transistor (TFT) array substrate including a display region, wherein a plurality of pixel regions is defined in a matrix, and alignment keys are provided at the outside of the display region, forming an electrophoretic layer including a micro capsule layer formed so as to correspond to the display region of the TFT array substrate, and forming a color filter layer on an outer surface of the electrophoretic layer using the alignment keys so as to correspond to the respective pixel regions of the display region.

Abstract: A light-emitting device is disclosed capable of reducing the variation of an emission spectrum depending on an angle of viewing a light extraction surface. More particularly, a light-emitting device is disclosed capable of preventing impurities from dispersing from a light-emitting element into a thin film transistor as well as reducing the variation of an emission spectrum depending on an angle of viewing a light extraction surface. The disclosed light-emitting device comprises a substrate; a first insulating layer provided over the substrate; a transistor provided over the first insulating layer; and a second insulating layer having a first opening portion so that the transistor is covered and the substrate is exposed; wherein a light-emitting element is provided inside the first opening portion.

Abstract: An LED die structure and a method for manufacturing the bottom terminal of the LED die structure, wherein the LED die includes a substrate, a light-emitting layer positioned at the top of the substrate, at least one bottom terminal positioned at the bottom of the substrate, at least one top terminal positioned at the top of the light-emitting layer, and at least one side terminal positioned at the side of the bottom of the substrate, and wherein the method comprises the following steps: a) recessing the bottom side of the wafer to a predetermined height when the LED is formed in a wafer type; b) coating the metal material to the bottom of the wafer and to the inside of the recesses; and c) dividing the wafer along the recesses into dies. In this way, the bottom terminal and the side terminal are formed at the bottom of the substrate of the die. Moreover, the LED die structure enhances the quality of the electric connection between the die-bonding paste and the LED die.

Abstract: The present invention relates to a light emitting device (1) comprising a light emitter (10) and a support (13) to which a plurality of protruding fibers (11) are attached. The light emitter (10) and the protruding fibers (11) are arranged to interact with light emitted from the light emitter (10) so that the light may be diffused. The plurality of protruding fibers comprises fibers (11) which are inclined or perpendicular in relation to the support (13).

Abstract: An improved solid-state light source (103) for producing illuminating light (114) generated by interaction of light from an LED source (105) with a quantum dot, in one embodiment located in a well (117). A solid-state illuminator with integrated quantum dots advantageously allows for an efficient broadband or narrow band LED to be produced in a variety of specified colors and color temperatures, and allows for a more compact, less heat producing, and more energy efficient manufacturable illumination device, and further facilitates integration of the illuminator and detector into medical, industrial, and laboratory illuminators, microchips, or lab-on-chip devices or systems. Methods of use are also disclosed.

Abstract: Embodiments of the present invention provide an LED having a Wavelength Shift Layer (WSL) and method of manufacture. Specifically, under embodiment of the present invention, a WSL layer is applied over an LED chip. The WSL itself typically comprises two layers: an adhesion layer applied over a set (at least one) of LED chips, and a conformal coating over the adhesion layer. The adhesion layer provides improved adhesive effect of the conformal coating to the LED chip(s). The conformal coating is comprised of a particular phosphor ratio that is determined based on a wavelength measurement of the underlying LED chip(s). Specifically, under the present invention, a wavelength of a light output by an LED chip(s) (e.g., blue or ultra-violet (UV)) is measured (e.g., at the wafer level). Typically, the phosphor ratio of is comprised of at least one of the following colors: yellow, green, or red. Regardless, this conformal coating is applied over a glue layer that itself is applied over the LED chip.

Abstract: Several embodiments of light emitting diode packaging configurations including a substrate with a cavity are disclosed herein. In one embodiment, a cavity is formed on a substrate to contain an LED and phosphor layer. The substrate has a channel separating the substrate into a first portion containing the cavity and a second portion. A filler of encapsulant material or other electrically insulating material is molded in the channel. The first portion can serve as a cathode for the LED and the second portion can serve as the anode.

Abstract: Disclosed is a light emitting device. The light emitting device includes a light emitting structure comprising an active layer to generate first light, a first conductive semiconductor layer on the active layer, and a second conductive semiconductor layer on the active layer so that the active layer is disposed between the first and second conductive semiconductor layers, wherein a portion of the light emitting structure is implanted with at least one element which generates second light from the first light.

Abstract: Disclosed is a light emitting diode (LED) street lamp using an LED as a light source and capable of minimizing a luminance deviation within an illuminated area while increasing the luminance of the entire illuminated area. The LED street lamp includes a case provided at a front end of a lamp post; a board provided inside the case and having a plurality of LEDs spaced apart from each other; and heat dissipation units closely adhered to the board and dissipating heat generated when the LEDs emit light, wherein the plurality of LEDs have different luminance levels from each other, the luminance levels gradually increase from the center of the board to the edge of the board, and diffusing members diffusing the light generated from the plurality of LEDs are provided on board portions corresponding to areas between each of the plurality of LEDs.

Abstract: A touch sensing type liquid crystal display device includes an array substrate includes a first substrate, a common electrode, a pixel electrode, and a touch sensing unit; a color filter substrate including a second substrate and facing the array substrate; an anti-static layer on an outer side of the second substrate and including an organic material and a carbon nano-tube; and a liquid crystal layer between the first substrate and an inner side of the second substrate.

Abstract: A thin film transistor including: an active layer formed on a substrate; a gate insulating layer pattern formed on a predetermined region of the active layer; a gate electrode formed on a predetermined region of the gate insulating layer pattern; an etching preventing layer pattern covering the gate insulating layer pattern and the gate electrode; and a source member and a drain member formed on the active layer and the etching preventing layer pattern.

Abstract: While suppressing the frequency of a signal line driver circuit, a blur of a moving image of a light-emitting device using a light-emitting transistor can be prevented, without reducing a frame frequency. A switching element is provided in a path of a current which flows between a source and a drain of a light-emitting transistor, and the light-emitting transistor is made not to emit light by turning off the switching element, whereby pseudo-impulse driving is performed. Switching of the switching element can be controlled by a scan line driver circuit. In a specific structural example, the light-emitting device includes, in a pixel, a light-emitting transistor, a first switching element which controls supply of a potential of a video signal to a gate of the light-emitting transistor, and a second switching element which controls a current which flows between a source and a drain of the light-emitting transistor.

Abstract: According to one embodiment, a semiconductor light emitting device includes, a first semiconductor layer, a second semiconductor layer, a first electrode, a second electrode, a first interconnection, and a second interconnection. The first semiconductor layer has a first major surface, a second major surface provided on an opposite side to the first major surface, a protrusion selectively provided on the second major surface, and a trench formed from the second major surface to the first major surface. The second semiconductor layer is stacked on the protrusion of the first semiconductor layer and includes a light emitting layer. The first electrode is provided on the second major surface of the first semiconductor layer and a side surface of the trench. The second electrode is provided on a surface of the second semiconductor layer on an opposite side to the first semiconductor layer.

Abstract: An organic light emitting display device having high transmittance with respect to external light and a method of manufacturing the same. The organic light emitting display device includes a substrate; a plurality of pixels formed on the substrate, each of the pixels including a first region that emits light and a second region that transmits external light; a plurality of thin film transistors disposed in the first region of each pixel; a plurality of first electrodes disposed in the first region of each pixel and electrically connected to the thin film transistors, respectively; a second electrode formed opposite to the plurality of first electrodes and comprising a plurality of transmission windows corresponding to the second regions; and an organic layer formed between the first electrodes and the second electrode. The transmission windows can be formed in the second electrode, that is, a cathode.

Abstract: There is provided an electric device which can prevent a deterioration in a frequency characteristic due to a large electric power external switch connected to an opposite electrode and can prevent a decrease in the number of gradations. The electric device includes a plurality of source signal lines, a plurality of gate signal lines, a plurality of power source supply lines, a plurality of power source control lines, and a plurality of pixels. Each of the plurality of pixels includes a switching TFT, an EL driving TFT, a power source controlling TFT, and an EL element, and the power source controlling TFT controls a potential difference between a cathode and an anode of the EL element.

Abstract: A semiconductor wafer includes a substrate, a first separating structure and a semiconductor stacked layer structure. The substrate has a first surface. The first separating structure is formed on the first surface to divide the first surface into a plurality of independent regions. The minimum area of each of the regions is more than or equal to one square inch. The semiconductor stacked layer structure is disposed on the first surface and the first separating structure. The semiconductor wafer can prevent bowing of the semiconductor wafer during an epitaxial growth process so as to enhance quality of the semiconductor wafer.

Abstract: A method of manufacturing a light emitting device is provided. An epitaxial layer is first formed at a plurality of separated regions on a substrate and a second electrode layer is formed on the epitaxial layer. Subsequently, the substrate is removed from the epitaxial layer and a first electrode layer is formed under the epitaxial layer, after which the second electrode layer is divided into chip units.

Abstract: A flip-chip LED module fabrication method includes the steps of (a) growing an epitaxial layer consisting of a N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer on a wafer substrate, (b) dividing the wafer into individual light-emitting chips, (c) selecting qualified light-emitting chips, (d) coating an UV-curable adhesive on o a film and then bonding the selected light-emitting chips to the film by means of the UV-curable adhesive, (e) curing the UV-curable adhesive with ultraviolet rays, and (f) operating push-up needles of an equipment to knock the opposite side of the film to let the light-emitting chips be separated from the film without causing damage.

Abstract: A barrier film composite includes a decoupling layer and a barrier layer. The barrier layer includes a first region and a second region that is thinner than the first region.

Abstract: A display device includes an array of light emitting cells. Each light emitting cell includes first and second electrodes, and an organic light emitting layer located between the first and second electrodes. Banks are above the first electrode that partition the organic light emitting layer to define each of the light emitting cells. First and second light emitting cells are adjacent to one another and located in a peripheral region of the array. The first light emitting cell is closer to a center of the array than the second light emitting cell. A first bank borders the first light emitting cell and the second light emitting cell. An inclination angle of an innermost sidewall of the first bank that is adjacent the first light emitting cell is greater than an inclination angle of an outermost sidewall of the first bank that is adjacent the second light emitting cell.

Abstract: Disclosed is a light emitting element comprising a first array having a plurality of vertical light emitting cells connected in series on a single substrate; and a second array that has another plurality of vertical light emitting cells connected in series on the single substrate and is connected to the first array in reverse parallel. In the light emitting element, each of the vertical light emitting cells in the first and second arrays has a first electrode pad on a bottom surface thereof and a second electrode pad on a top surface thereof, and a connection portion is provided to electrically connect the first electrode pad of the vertical light emitting cell in the first array to the first electrode pad of the vertical light emitting cell in the second array.

Abstract: One or more circuit elements such as silicon diodes, resistors, capacitors, and inductors are disposed between the semiconductor structure of a semiconductor light emitting device and the connection layers used to connect the device to an external structure. In some embodiments, the n-contacts to the semiconductor structure are distributed across multiple vias, which are isolated from the p-contacts by one or more dielectric layers. The circuit elements are formed in the contacts-dielectric layers-connection layers stack.

Abstract: A light emitting device with magnetic field includes a light-emitting structure and a first magnetic-source layer. The light-emitting structure includes a first doped structural layer, a second doped structural layer, an active layer between the two doped structural layers, a first electrode, and a second electrode. The first magnetic-source layer is integrated with the light-emitting structure to produce a magnetic field in the light-emitting structure. The magnetic field transversely shifts a driving current of the light-emitting structure to redistribute in the light-emitting structure.

Abstract: Solid state lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state light device includes a light emitting diode with an N-type gallium nitride (GaN) material, a P-type GaN material spaced apart from the N-type GaN material, and an indium gallium nitride (InGaN) material directly between the N-type GaN material and the P-type GaN material. At least one of the N-type GaN, InGaN, and P-type GaN materials has a non-planar surface.

Abstract: A semiconductor chip comprises: a semiconductor body which comprises a semiconductor layer sequence suitable for emitting electromagnetic radiation of a first wavelength range from its front side; and a first wavelength-converting layer on at least one first partial region of the front side of the semiconductor body with a first wavelength conversion substance, which converts radiation of the first wavelength range into radiation of a second wavelength range, which is different from the first wavelength range, wherein at least one second partial region of the front side is free of the first wavelength-converting layer. An optoelectronic component comprising such a semiconductor chip and a method for producing the semiconductor chip are furthermore described.

Abstract: A method of forming a light emitting diode is provided. The method includes providing a growth substrate; sequentially forming a sacrificial layer and an epitaxial layer on the growing substrate; forming one or more epitaxial layer openings penetrating the epitaxial layer and exposing the sacrificial layer; forming a supporting layer on the epitaxial layer, the supporting layer having one or more supporting layer openings penetrating the supporting layer and joining the epitaxial layer openings; and selectively etching the sacrificial layer to separate the growth substrate from the epitaxial layer.

Abstract: Semiconductor material is formed on a host substrate of a material exhibiting optical transparency with an intervening radiation lift off layer. A transfer device, intermediate substrate or target substrate is brought into adhesive contact with the semiconductor material and the radiation lift off layer is irradiated to weaken it, allowing the semiconductor material to be transferred off the host substrate. Electronic devices may be formed in the semiconductor layer while it is attached to the host substrate or the intermediate substrate.

Abstract: Provided are a conductive adhesive capable of ensuring both conductive properties and adhesion properties and an LED substrate using the conductive adhesive. The conductive adhesive contains a conductive filler, a binder resin, and a solvent as main components thereof, and the conductive filler contains a metal powder having an average particle size of 2 to 30 ?m as a main component thereof and contains ultrafine metal particles having an average particle size of 100 nm or less.

Abstract: A semiconductor light-emitting device and a method for manufacturing the same is disclosed, which improves light extraction efficiency by forming a plurality of protrusions on a surface of a substrate for growing a nitride semiconductor material thereon, the semiconductor light-emitting device comprising a substrate; one or more first protrusions on the substrate, each first protrusion having a recess through which a surface of the substrate is exposed planarly; a first semiconductor layer on the substrate including the first protrusions; an active layer on the first semiconductor layer; a second semiconductor layer on the active layer; a first electrode on a predetermined portion of the first semiconductor layer, wherein the active layer and second semiconductor layer are not formed on the predetermined portion of the first semiconductor layer; and a second electrode on the second semiconductor layer.

Abstract: A method of manufacturing a solid state imaging device having a photo-electric conversion portion array and a transfer electrode array, these arrays being provided in parallel to each other, upper surfaces and side wall surfaces of the transfer electrode array being covered with a light-shielding layer, and a transparent layer showing an oxidizing property at the time of film formation, the transparent layer being formed on the photo-electric conversion parts and the light-shielding layer.

Abstract: A light-emissive device includes a substrate having a first electrode formed on the substrate. A colloidal light-emitting layer comprising inorganic, light-emissive particles is formed over the first electrode. A second electrode is formed over the light-emitting layer. At least one of the first and second electrodes is transparent. The transparent electrode preferably has a refractive index substantially equal to or greater than the refractive index of the colloidal light-emitting layer. Finally, a light-scattering layer is formed on a side of the transparent electrode opposite the colloidal light-emitting layer.

Abstract: An organic electroluminescent display device in which a plurality of light-emitting cells each having an organic electroluminescent portion are arranged on a substrate, wherein, for each of the light-emitting cells, a first transistor which controls energization on the organic electroluminescent portion, and a second transistor which switches a signal to be given to an input of the first transistor are disposed, active layers of the first and second transistors are formed by an amorphous oxide semiconductor, and, the first and second transistors are formed so that, when the first and second transistors are driven under same conditions, an amount of an output current of the first transistor is smaller than an amount of an output current of the second transistor.

Abstract: A semiconductor light-emitting device includes: a first semiconductor layer having a first major surface and a second major surface which is an opposite side to the first major surface; a second semiconductor layer provided on the second major surface of the first semiconductor layer and including a light-emitting layer; a first electrode provided on the second major surface of the first semiconductor layer; a second electrode provided on a surface of the second semiconductor layer, the surface being an opposite side to the first semiconductor layer; an insulating film provided on a side surface of the second semiconductor layer, and an edge of an interface between the first semiconductor layer and the second semiconductor layer; and a metal film provided on the insulating film from the second electrode side toward the edge of the interface.

Abstract: The present invention is related to a supporting substrate for manufacturing vertically-structured semiconductor light emitting device and a vertically-structured semiconductor light emitting device using the same, which minimize damage and breaking of a multi-layered light-emitting structure thin film separated from a sapphire substrate during the manufacturing process, thereby improving the whole performance of the semiconductor light emitting device.

Abstract: A method of manufacturing an organic light emitting diode display, the method including forming an amorphous silicon layer on a buffer layer disposed on substrate, heat-treating the amorphous silicon film to form a microcrystalline silicon film; and scanning and irradiating a linear laser beam twice or more onto the microcrystalline silicon film to form a polysilicon film, wherein a subsequent scanning of the linear laser beam partially overlaps previous scanning of the linear laser beam in a width direction.

Abstract: In a display device, the display device includes a substrate, a red color filter layer, a green color filter layer, and a blue color filter layer. The substrate has red, green and blue sub-pixel regions. The red color filter layer is located on the red, green and blue sub-pixel regions, and has a first opening formed in the green sub-pixel region and a second opening formed in the blue sub-pixel region. The green color filter layer is located in the first opening. The blue color filter layer is located in the second opening. Since the red color filter layer is used as an interlayer insulating layer, there is no need to perform a separate process to form a color filter layer and a process for an interlayer insulating layer can be omitted. Thus, it can simplify a process.

Abstract: In a method for producing an optoelectronic component, a growth substrate having a first coefficient of thermal expansion is provided. A multilayered buffer layer sequence is applied thereto. A layer sequence having a second coefficient of thermal expansion—different than the first coefficient of thermal expansion—is subsequently deposited epitaxially. It furthermore comprises an active layer for emitting electromagnetic radiation. A carrier substrate is subsequently applied on the epitaxially deposited layer sequence. The growth substrate is removed and the multilayered buffer layer sequence is structured in order to increase a coupling-out of electromagnetic radiation. Finally, contact is made with the epitaxially deposited layer sequence.

Abstract: Semiconductor light converting constructions are disclosed. The semiconductor light converting construction includes a semiconductor potential well for converting at least a portion of light at a first wavelength to light at a longer second wavelength; an outer layer that is disposed on the semiconductor potential well and has a first index of refraction; and a structured layer that is disposed on the outer layer and has a second index of refraction that is smaller than the first index of refraction. The structured layer includes a plurality of structures that are disposed directly on the outer layer and a plurality of openings that expose the outer layer. The semiconductor light converting construction further includes a structured overcoat that is disposed directly on at least a portion of the structured layer and a portion of the outer layer in the plurality of openings. The overcoat has a third index of refraction that is greater than the second index of refraction.