Abstract: A spin valve element according to an embodiment includes: a nonmagnetic base layer; a first terminal including a first magnetic layer connecting to a portion near one of opposing end faces of the nonmagnetic base layer; a second terminal including a second magnetic layer disposed and connecting to the nonmagnetic base layer so as to be at a distance from the first terminal; a third terminal including a third magnetic layer disposed and connecting to the nonmagnetic base layer so as to be at distances from the first and second terminals, the second terminal and the third terminal connecting to a current source that passes a sense current, and the first terminal and one of the second terminal and the third terminal connecting to a voltage detection unit that detects a voltage.

Abstract: Methods for providing magnetic storage elements with high magneto-resistance using Heusler alloys are provided. One such method includes depositing a substrate including NiFe, depositing a seed layer on the substrate, depositing a buffer layer on the seed layer, and growing, epitaxially, an upper layer on the buffer layer, the upper layer including a Heusler alloy.

Abstract: In one embodiment, a magnetic head includes at least one magnetoresistive (MR) element positioned at a media-facing surface of the magnetic head, a lower portion of the at least one MR element extending in an element height direction away from the media-facing surface of the magnetic head farther than an upper portion of the at least one MR element, at least one back wiring layer positioned behind the upper portion of the at least one MR element in the element height direction and above the lower portion of the at least one MR element, the at least one back wiring layer being configured to electrically communicate with the at least one MR element, and an upper wiring layer positioned above the at least one MR element at the media-facing surface of the magnetic head and extending in the element height direction away from the media-facing surface of the magnetic head.

Abstract: Disclosed are methods for making read sensors using developable bottom anti-reflective coating and amorphous carbon (a-C) layers as junction milling masks. The methods described herein provide an excellent chemical mechanical polishing or planarization (CMP) stop, and improve control in reader critical physical parameters, shield to shield spacing (SSS) and free layer track width (FLTW).

Abstract: A heat-assisted magnetic recording (HAMR) air-bearing slider has an optically-transparent protective film over the near-field transducer (NFT) to protect the NFT from excessive heat caused by the accumulation of carbonaceous material on the slider's overcoat. The NFT is thus separated from the overcoat by the protective film. The protective film does not cover the write pole end, which is covered only by the overcoat, so there is no spacing loss between the write pole end and the recording layer on the disk. In one embodiment the protective film is coplanar with the recording-layer-facing surface of the slider and the overcoat covers both the protective film and the write pole end. In another embodiment the overcoat has a window that surrounds the protective film, with the protective film being substantially coplanar with the air-bearing surface (ABS) of the slider. In both embodiments the smooth topography of the slider's ABS is maintained.

Abstract: A method and apparatus for reading electronic memory comprising a current source, a spin transfer oscillator, an external field source, coupled to the current source, for generating an RF signal, the spin torque oscillator positioned proximate a magnetic media comprising a plurality of bit regions of varying magnetic permeability, wherein a frequency of the RF signal varies in response to the permeability of a bit region in the plurality of bit regions being proximate the spin torque oscillator.

Abstract: Technologies are described herein for detecting an external magnetic field affecting a magnetic storage device through use of the read/write heads of the device. The magneto-resistive resistance (“MRR”) associated with a pair of read/write heads oriented to read and write opposite recording surfaces of the storage medium. If the change in the MRR associated with the first read/write head is in an inverse direction to the change in MRR associated with the second read/write head and the change in the MRR of either read/write head exceeds a threshold, then all operations of the storage device are halted and the read/write heads are parked.

Abstract: A data storage device may be generally directed to a data transducing head capable of magnetoresistive data reading. Such a data transducing head may be configured with at least a trilayer reader that contacts and is biased by a coupling feature. The coupling feature may have a smaller extent from an air bearing surface (ABS) than the trilayer reader.

Abstract: The present invention relates to a magnetic sensor that provides the sensitivity adjustment on a wafer and that has a superior mass productiveness and a small characteristic variation. The magnetic sensor includes a magnetic sensitive portion provided on a substrate that is made of a compound semiconductor and that has a cross-shaped pattern. This magnetic sensitive portion includes input terminals and output terminals. At least one of input terminals of the input terminal is series-connected to a trimming portion having a compound semiconductor via a connection electrode. By performing laser trimming on the trimming portion series-connected via the connection electrode to the magnetic sensitive portion while performing a wafer probing (electric test), the adjustment of the constant voltage sensitivity is provided.

Abstract: According to one embodiment, a spin-torque oscillator includes a non-magnetic unit, one or more first magnetic unit, and a second magnetic unit. The non-magnetic unit is formed of a non-magnetic body. The one or more first magnetic unit is connected to the non-magnetic unit and generates a pure spin current indicating the flow of the electron spin that does not accompany an electric charge current. The second magnetic unit is connected to the non-magnetic unit in a manner such that a distance between the second magnetic unit and the first magnetic unit is shorter than a spin diffusion length indicating a distance that an electronic spin polarization is maintained in the non-magnetic unit. The second magnetic unit oscillates by the pure spin current.

Abstract: In accordance with certain embodiments, a method can be utilized that includes depositing a backfill material layer over a reader stack; depositing a chemical-mechanical-polishing stop layer above the layer of backfill material; and depositing a sacrificial layer on top of the chemical-mechanical-polishing stop layer.

Abstract: A magnetoresistance effect element having a magnetoresistance effect film and a pair of electrode, the magnetoresistance effect film having a first magnetic layer whose direction of magnetization is substantially pinned in one direction, a second magnetization layer whose direction of magnetization changes in response to an external magnetic field, a nonmagnetic intermediate layer located between the first and second magnetic layers, and a film provided in the first magnetic layer, in the second magnetic layer, at an interface between the first magnetic layer and the nonmagnetic intermediate layer, and/or at an interface between the second magnetic layer and the nonmagnetic intermediate layer.

Abstract: Embodiments relate to xMR sensors, in particular AMR and/or TMR angle sensors with an angle range of 360 degrees. In embodiments, AMR angle sensors with a range of 360 degrees combine conventional, highly accurate AMR angle structures with structures in which an AMR layer is continuously magnetically biased by an exchange bias coupling effect. The equivalent bias field is lower than the external rotating magnetic field and is applied continuously to separate sensor structures. Thus, in contrast with conventional solutions, no temporary, auxiliary magnetic field need be generated, and embodiments are suitable for magnetic fields up to about 100 mT or more. Additional embodiments relate to combined TMR and AMR structures. In such embodiments, a TMR stack with a free layer functioning as an AMR structure is used. With a single such stack, contacted in different modes, a high-precision angle sensor with 360 degrees of uniqueness can be realized.

Abstract: A system for testing a magnetic sensor has a plurality of coils, wherein the coils are positioned along perpendicular planes. A magnetic field is generated along each of the perpendicular planes when a current is sent to each of the plurality of coils.

Abstract: A magnetic sensor comprises a first ferromagnetic body, a second ferromagnetic body, a channel extending from the first ferromagnetic body to the second ferromagnetic body, a magnetic shield covering the channel, and an insulating film disposed between the channel and the magnetic shield, while the magnetic shield has a through-hole extending toward the channel.

Abstract: A method for fabricating a structure in magnetic recording head is described. First and second hard mask layers are provided on the layer(s) for the structure. A BARC layer and photoresist mask having a pattern are provided on the second hard mask layer. The pattern includes a line corresponding to the structure. The pattern is transferred to the BARC layer and the second hard mask layer in a single etch using an etch chemistry. At least the second hard mask layer is trimmed using substantially the same first etch chemistry. A mask including a hard mask line corresponding to the line and less than thirty nanometers wide is thus formed. The pattern of the second hard mask is transferred to the first hard mask layer. The pattern of the first hard mask layer is transferred to the layer(s) such that the structure has substantially the width.

Abstract: A synthetic antiferromagnetic device includes a reference layer having a first and second ruthenium layer, a magnesium oxide spacer layer disposed on the reference layer, a cobalt iron boron layer disposed on the magnesium oxide spacer layer and a third ruthenium layer disposed on the cobalt iron boron layer, the third ruthenium layer having a thickness of approximately 0 angstroms to 18 angstroms.

Abstract: A data storage device may be generally directed to a data transducing head capable of magnetoresistive data reading. Such a data transducing head may be configured with at least a trilayer reader that contacts and is biased by a coupling feature. The coupling feature may have a smaller extent from an air bearing surface (ABS) than the trilayer reader.

Abstract: A method to measure a magnetic field is provided. The method includes applying an alternating drive current to a drive strap overlaying a magnetoresistive sensor to shift an operating point of the magnetoresistive sensor to a low noise region. An alternating magnetic drive field is generated in the magnetoresistive sensor by the alternating drive current. When the magnetic field to be measured is superimposed on the alternating magnetic drive field in the magnetoresistive sensor, the method further comprises extracting a second harmonic component of an output of the magnetoresistive sensor. The magnetic field to be measured is proportional to a signed amplitude of the extracted second harmonic component.

Abstract: A write head includes a first pole P1, a P1 pedestal, a first back gap layer plated on top of the first pole P1 leaving a region between the P1 pedestal and the first back gap layer for plating a coil. Further, a first insulation layer is applied on top of the P1 pedestal and the first back gap layer and the region between the P1 pedestal and the first back gap layer. The write head further includes a coil, patterned at least partially on top of the P1 pedestal and the first back gap layer and the region between the P1 pedestal and the first back gap layer, copper plated in the coil patterns, and a second insulation layer is applied to fill the spaces in between the coil turns. The resulting structure is planarized via chemical mechanical polishing.

Abstract: A method of manufacturing a thermally-assisted magnetic head includes aligning the light source unit to the thermally-assisted magnetic head section on the slider body; and performing a bonding between the unit substrate and the slider body with a bonding layer in between. And process of the bonding includes irradiating the bonding layer with a first laser shot, pausing for a time interval after the first laser shot, and then irradiating a second laser shot, wherein a first irradiating power of the first laser shot is weaker than a second irradiating power of the second laser shot, and a first irradiating time of the first laser shot is shorter than a second irradiating time of the second laser shot. The method can keep an accurate alignment of the unit substrate with respect to the slider after a bonding process and, in turns improve performance of the thermally-assisted magnetic head.

Abstract: Tolerances for manufacturing reader structures for transducer heads continue to grow smaller and storage density in corresponding storage media increases. Reader stop layers may be utilized during manufacturing of reader structures to protect various layers of the reader structure from recession and/or scratches while processing other non-protected layers of the reader structure. For example, the stop layer may have a very low polish rate during mechanical or chemical-mechanical polishing. Surrounding areas may be significantly polished while a structure protected by a stop layer with a very low polish rate is substantially unaffected. The stop layer may then be removed via etching, for example, after the mechanical or chemical-mechanical polishing is completed.

Abstract: A spin accumulation sensor having a three terminal design that allows the free layer to be located at the air bearing surface. A non-magnetic conductive spin transport layer extends from a free layer structure (located at the ABS) to a reference layer structure removed from the ABS. The sensor includes a current or voltage source for applying a current across a reference layer structure. The current or voltage source has a lead that is connected with the non-magnetic spin transport layer and also to electric ground. Circuitry for measuring a signal voltage measures a voltage between a shield that is electrically connected with the free layer structure and the ground. The free layer structure can include a spin diffusion layer that ensures that all spin current is completely dissipated before reaching the lead to the voltage source, thereby preventing shunting of the spin current to the voltage source.

Abstract: Systems and methods for providing magnetic storage elements with high magneto-resistance using Heusler alloys are provided. One such method includes depositing a substrate including NiFe, depositing a seed layer on the substrate, depositing a buffer layer on the seed layer, and growing, epitaxially, an upper layer on the buffer layer, the upper layer including a Heusler alloy.

Abstract: Implementations described and claimed herein provide a read sensor structure having a synthetic anti-ferromagnetic (SAF) structure with a pinning that is canted with respect to an air bearing surface (ABS) of the read sensor. In an implementation of the read sensor, the angle between the pinning direction of a reference layer (RL) and the pinning direction of a free layer (FL) is obtuse.

Abstract: A magnetoresistance device comprises a substrate, an elongate semiconductor channel extending in a first direction and at least two conductive leads providing a set of contacts to the channel. The device may comprise an optional semiconductor shunt in contact with the channel. The optional shunt, channel and set of contacts are stacked relative to the substrate in a second direction which is perpendicular to the first direction and the surface of the substrate. The device has a side face running along the channel. The device is responsive to a magnetic field generally perpendicular to the side face.

Abstract: An apparatus and associated method may be used to produce a magnetic element capable of detecting changes in magnetic states. Various embodiments of the present invention are generally directed to a magnetically responsive lamination of layers with a first portion and a laterally adjacent second portion. The second portion having a predetermined roughness between at least two layers capable of producing orange-peel coupling.

Abstract: A method for fabricating a magnetic tunnel junction element includes forming a magneto resistance layer including a first magnetic layer, an insulation layer and a second magnetic layer on a substrate, forming a magnetic loss area by doping a magnetic loss impurity into a region of the magneto resistance layer to cause a magnetic loss, and etching the magnetic loss area to form a magnetic tunnel junction element.

Abstract: A measuring circuit system in a magnetic field measuring apparatus of the invention has an amplifier and a band-pass filter connected in sequence on an output terminal side of the TMR element, the band-pass filter is a narrow-range band-pass filter such that a peak pass frequency of the filter that is a center is a basic frequency selected from a range of 10 to 40 GHz and a band width centered around the basic frequency is a narrow range of ±0.5 to ±4 GHz; and with the measuring circuit system, an S/N ratio (SNR) of 3 dB or greater is obtained, the SNR being defined by a ratio of an amplitude S of a high-frequency generated signal induced by the TMR element to a total noise N that is a sum of a head noise generated by the TMR element and a circuit noise generated by the amplifier. With such a configuration, an in-plane high-frequency magnetic field generated by a microwave-assisted magnetic head is reliably and precisely measured.

Abstract: An apparatus and generally associated method may be directed to a magnetic reader capable of concurrently or independently data access and environmental measurements. Various embodiments construct such a magnetic reader with first and second data transducing elements that are each adapted to selectively read data and measure clearance from an adjacent data storage media.

Abstract: A magnetic junction memory array and methods of using the same are described. The magnetic junction memory array includes a plurality of electrically conductive word lines extending in a first direction, a plurality of electrically conductive bit lines extending in a second direction and forming a cross-point array with the plurality of electrically conductive word lines, and a memory cell proximate to, at least selected, cross-points forming a magnetic junction memory array. Each memory cell includes a magnetic pinned layer electrically between a magnetic bit and an isolation transistor. The isolation transistor has a current source and a gate. The current source is electrically coupled to the cross-point bit line and the gate is electrically coupled to the cross-point word line. An electrically conductive cover layer is disposed on and in electrical communication with the magnetic bits.

Abstract: A method and system for providing a magnetic read transducer is described. The magnetic read transducer includes a bilayer magnetic seed layer, an antiferromagnetic (AFM) layer, and a read sensor. The bilayer magnetic seed layer includes a Ni1-xFex layer and a Ni1-yFey layer on the Ni1-xFex layer, where x is at least 0.3 and not more than 1 and where y is not more than 0.19. The AFM layer resides on the bilayer magnetic seed layer. The read sensor is on the AFM layer.

Abstract: A method of forming a hardened layer on a tape drive head assembly comprising building a tape drive head assembly, in which a number of layers of amorphous material are applied along read and write components of the tape drive head assembly as the tape drive head assembly is built and selectively heating portions of the amorphous material. A drive head assembly comprising a write component, a magnetic resistive element, and a number of layers of amorphous material, in which a portion of the amorphous material is hardened.

Abstract: A method of manufacturing a sensor module includes providing a substrate comprising an array of magnetically sensitive elements on a first main face of the substrate. An array of conducting lines is applied over the first main face of the substrate. An array of electrical interconnects is applied over the first main face of the substrate. The substrate is singulated after application of the electrical interconnects.

Abstract: The invention provides a method for fixing up the deterioration of a magneto-resistive effect device. A hard disk system is provided in it with a head heating means for heating a thin-film magnetic head, and by that head heating means, a defective site of the magneto-resistive effect device, which occurs as the hard disk system is in operation and is confined in a quasi-stable state, is fixed up in such a way as to return back to its own normal stable state. Thus, the deteriorated site of the magneto-resistive effect device (reproducing device) in the thin-film magnetic head, which is caused by the so-called thermal asperity as the hard disk system is in operation, is fixed up while it remains built in the hard disk system, i.e., without dismantling the hard disk system.

Abstract: Various embodiments of the present invention are generally directed to a magnetically responsive lamination that may be constructed with a spacer layer disposed between a first and second ferromagnetic free layer. At least one ferromagnetic free layer can have a coupling sub-layer that enhances magnetoresistance ratio (MR) of the magnetically responsive lamination.

Abstract: A magnetic sensor comprises a channel, a ferromagnetic body and first and second reference electrodes on the channel, a magnetic shield covering a part of the channel opposing the ferromagnetic body, and an insulating film disposed between the channel and the magnetic shield, while the magnetic shield has a through-hole extending toward the part of the channel opposing the ferromagnetic body.

Abstract: A read sensor for a read transducer is fabricated. The read transducer has field and device regions. A read sensor stack is deposited. A mask covering part of the stack corresponding to the read sensor is provided. The read sensor having inboard and outboard junction angles is defined from the stack in a track width direction. A critical junction (CJ) focused ion beam scan (FIBS) polishing that removes part of the read sensor based on the junction angles is performed. A hard bias structure is deposited and the transducer planarized. A remaining portion of the mask is removed. A stripe height mask covering part of the read sensor and hard bias structure in a stripe height direction is provided. The read sensor stripe height is defined. A tunneling magnetoresistance (TMR) FIBS polishing that removes part of the stack in the field region is performed. An insulating layer is provided.

Abstract: A system, method, and apparatus for forming a high quality master pattern for patterned media, including features to support servo patterns, is disclosed. Block copolymer self-assembly is used to facilitate the formation of a track pattern with narrower tracks. E-beam lithography forms a chemical contrast pattern of concentric rings, where the spacing of the rings is equal to an integral multiple of the target track pitch. The rings include regions within each servo sector header where the rings are offset radially by a fraction of a track pitch. Self-assembly is performed to form a new ring pattern at the target track pitch on top of the chemical contrast pattern, including the radial offsets in the servo sector headers. When this pattern is transferred to disks via nanoimprinting and etching, it creates tracks separated by nonmagnetic grooves, with the grooves and tracks including the radial offset regions.

Abstract: In one embodiment, a magnetic head includes at least one magnetic head element for reading from and/or writing to a magnetic medium, the element having an air bearing surface (ABS) facing toward a magnetic medium, an adhesive film including silicon nitride above the ABS having a characteristic of being formed under a water vapor partial pressure, and a protective film above the adhesive film, the protective film including carbon. Also, in another embodiment, a method includes forming an ABS of a magnetic head, the ABS being a surface of the magnetic head which is closest to a magnetic medium when in use, forming an adhesive film above the ABS of the magnetic head, the adhesive film being formed under a water vapor partial pressure, and forming a protective film above the adhesive film, the protective film including carbon.

Abstract: In one embodiment, a magnetic head includes a lower shield layer, a sensor stack positioned above the lower shield layer, the sensor stack including a free layer, a layered hard bias magnet positioned above the lower shield layer and on both sides of the sensor stack in a track width direction, and an upper shield layer positioned above the hard bias magnet and the sensor stack. The hard bias magnet includes a perpendicular anisotropy film positioned above the lower shield layer and aligned with both sides of the sensor stack in the track width direction, wherein the perpendicular anisotropy film directs magnetic fields in a direction perpendicular to planes of formation thereof, and an in-plane anisotropy film positioned above the perpendicular anisotropy film, wherein the in-plane anisotropy film directs magnetic fields in a direction of planes of formation thereof.

Abstract: A magnetoresistive element includes a lamination body and a pair of electrodes. The lamination body includes a first magnetic layer, a second magnetic layer, and a spacer layer. The spacer layer is provided between the first magnetic layer and the second magnetic layer and includes an oxide layer. The oxide layer includes at least one element selected from the group consisting of Zn, In, Sn, and Cd, and at least one element selected from the group consisting of Fe, Co, and Ni.

Abstract: A method and system for providing a magnetic read transducer is described. The magnetic read transducer includes a bilayer magnetic seed layer, an antiferromagnetic (AFM) layer, and a read sensor. The bilayer magnetic seed layer includes a Ni1-xFex layer and a Ni1-yFey layer on the Ni1-xFex layer, where x is at least 0.3 and not more than 1 and where y is not more than 0.19. The AFM layer resides on the bilayer magnetic seed layer. The read sensor is on the AFM layer.

Abstract: A measuring circuit system in a magnetic field measuring apparatus of the invention has an amplifier and a band-pass filter connected in sequence on an output terminal side of the TMR element, the band-pass filter is a narrow-range band-pass filter such that a peak pass frequency of the filter that is a center is a basic frequency selected from a range of 10 to 40 GHz and a band width centered around the basic frequency is a narrow range of ±0.5 to ±4 GHz; and with the measuring circuit system, an SIN ratio (SNR) of 3 dB or greater is obtained, the SNR being defined by a ratio of an amplitude S of a high-frequency generated signal induced by the TMR element to a total noise N that is a sum of a head noise generated by the TMR element and a circuit noise generated by the amplifier. With such a configuration, an in-plane high-frequency magnetic field generated by a microwave-assisted magnetic head is reliably and precisely measured.

Abstract: A method and system provide a magnetoresistive structure from a magnetoresistive stack that includes a plurality of layers. The method and system include providing a mask that exposes a portion of the magnetoresistive stack. The mask has at least one side, a top, and a base at least as wide as the top. The method and system also include removing the portion of the magnetoresistive stack to define the magnetoresistive structure. The method and system further include providing an insulating layer. A portion of the insulating layer resides on the at least one side of the mask. The method and system further include removing the portion of the insulating layer on the at least one side of the mask and removing the mask.

Abstract: In certain embodiments, an apparatus includes a magnetoresistive (MR) sensor having a first and second electrode positioned at a first side of the MR sensor and a third electrode positioned at a second side of the MR sensor opposite the first side.

Abstract: Read elements and associated methods of fabrication are disclosed. A read element as described herein includes a magnetoresistance (MR) sensor sandwiched between first and second shields. The read element uses the first shield as an active portion of the MR sensor. Instead of implementing an AFM pinning layer in the MR sensor, the first shield takes the place of the AFM pinning layer. The first shield is orthogonally coupled to the pinned layer through an orthogonal coupling layer, such as a thin layer of AFM material. Through this structure, the magnetic moment of the first shield pins the magnetic moment of the pinned layer transverse to the ABS of the read element, and an AFM pinning layer is not needed.

Abstract: In one illustrative example, a magnetic storage device includes a three terminal magnetic sensor having a collector region made of a semiconductor material, a base region, and an emitter region. An insulator layer is formed between the collector region and a slider body which carries the three terminal magnetic sensor. The insulator layer serves to reduce a capacitance otherwise present between the collector region and magnetic media at a magnetic field sensing plane of the three terminal magnetic sensor. Thus, the insulator layer electrically isolates the collector region from the slider body. The structure may be formed through use of a separation by implanting oxygen (SIMOX) technique or a wafer-bonding technique, as examples.

Abstract: A move-sled-home device is used in an optical disc drive. The move-sled-home device includes a processing unit, a motor actuator, a sled, a sled motor, and a current-detecting unit. The processing unit outputs a control signal. The motor actuator generates a driving voltage according to the control signal. The sled motor generates a driving current according to the driving voltage to move the sled. The current-detecting unit is used for receiving and converting the driving current into an indicating signal, and issuing the indicating signal to the processing unit. During a move-sled-home action, the processing unit realizes a magnitude of the driving current according to the indicating signal, thereby determining whether the move-sled-home action is finished.

Abstract: An apparatus and associated method may be used to produce a magnetic element capable of detecting changes in magnetic states. Various embodiments of the present invention are generally directed to a magnetically responsive lamination of layers with a first portion and a laterally adjacent second portion. The second portion having a predetermined roughness between at least two layers capable of producing orange-peel coupling.