Abstract: A method of forming a metallic material on a substrate includes coating a chuck of a metallic material deposition chamber with an elemental metal coating, loading a substrate onto the chuck of the metallic material deposition chamber, and depositing an elemental metal layer on the substrate by thermal decomposition of a metal precursor gas including metal compound molecules. Each of the metal compound molecules includes an atom of the elemental metal and a first number of atoms of a non-metallic element. The metal compound molecules react with atoms of the elemental metal in the metal coating to generate molecules of an intermediate reaction compound including an atom of the elemental metal and a second number of atoms of the non-metallic element, the second number of atoms being less than the first number of atoms. The metal layer on the substrate is formed by thermal decomposition of the intermediate reaction compound.

Abstract: Apparatus and methods to deposit a film using a batch processing chamber with a plurality of heating zones are described. The film is deposited on one or more substrates and the uniformity of the deposition thickness is determined at a plurality of points. The heating zones set points are applied to a sensitivity matrix and new temperature or power set points for the heating zones are determined and set. One or more substrates are processed using the new set points and the thickness uniformity is determined and may be adjusted again to increase the uniformity.

Abstract: The present application discloses an evaporation plate for depositing a deposition material on a substrate. The evaporation plate has a first side and a second side opposite to the first side. The evaporation plate includes a main body plate; a first cooling layer on the main body plate and on the first side of the evaporation plate; and a first heating layer on a side of the first cooling layer distal to the main body plate. The first cooling layer is configured to cool the first heating layer on the first side of the evaporation plate. The first heating layer is configured to heat a material deposited on the first side of the evaporation plate.

Abstract: In a method of manufacturing a permanent magnet having a curved surface, a permeating material including metal particles and a flux is applied to the curved surface of a magnet. The magnet to which the permeating material is applied is then positioned within a furnace and the furnace is placed in a vacuum or filled with inert gas to volatilize a solvent and the like of the flux contained in the permeating material. The furnace is set to be a temperature within a range of 300 through 500 degrees C. to heat the permeating material. This enables the flux to be carbonized to form reticulated carbon. The furnace is then set to be a temperature within a range of 500 through 800 degrees C. to melt the metal particles in the permeating material, thereby permeating the melted metal particles into the magnet through the reticulated carbon uniformly.

Abstract: A monitoring unit for monitoring a plasma process chamber includes a piezoelectric member comprising a surface that is exposed within the plasma process chamber, a first electrode coupled to the piezoelectric member, a power supply unit coupled to the first electrode and configured to apply a voltage to the piezoelectric member through the first electrode, and a control unit coupled to the piezoelectric member and configured to detect a vibration frequency of the piezoelectric member. The vibration frequency is generated in response to the voltage applied to the piezoelectric member.

Abstract: A method for processing a stack with a carbon based patterned mask is provided. The stack is placed in an etch chamber. A silicon oxide layer is deposited by atomic layer deposition over the carbon based patterned mask by providing a plurality of cycles, wherein each of the cycles of the plurality of cycles, comprises providing a silicon precursor deposition phase, comprising flowing an atomic layer deposition precursor gas into the etch chamber, where the atomic layer deposition precursor gas is deposited while plasmaless and stopping the flow of the atomic layer deposition precursor gas and providing an oxygen deposition phase, comprising flowing ozone gas into the etch chamber, wherein the ozone gas binds with the deposited precursor gas while plasmaless and stopping the flow of ozone gas into the etch chamber. Part of the silicon oxide layer is etched. The stack is removed from the etch chamber.

Abstract: In some embodiments, a method of forming a cobalt layer on a substrate disposed in a process chamber, includes: (a) exposing the substrate to a first process gas comprising a cobalt precursor and a hydrogen containing gas to grow a smooth cobalt layer on a first surface of the substrate and on sidewalls and a bottom surface of a feature formed in the first surface of the substrate; (b) purging the first process gas from the process chamber; and (c) annealing the substrate in a hydrogen atmosphere to fill in voids within the cobalt layer to form a void-free cobalt layer. In some embodiments, plasma treating the substrate in gas under low pressure and/or thermally baking the substrate in gas in an atmosphere under a low pressure, may be performed prior to anneal.

Abstract: Provided are novel compositions of current compliance layers (CCLs) as well as novel methods of fabricating such CCLs and novel architectures of arranging CCLs and memory cells in memory arrays. A CCL may comprise one of sulfur (S), selenium (Se), and tellurium (Te). The CCL may further comprise one of germanium (Ge) and silicon (Si). CCLs may be fabricated as amorphous structure and remain amorphous when heated to 400° C. or 450° C. and above. In some embodiments, CCLs have crystallization temperatures of greater than 400° C. and, in some embodiments, glass transition temperatures of greater than 400° C. CCLs may be fabricated using atomic layer deposition (ALD) as a nanolaminate of layers having different compositions. The composition, number, and arrangement of the layers in the nanolaminate is specifically selected to yield a desired composition of CCL.

Abstract: Disclosed are organosilane precursors, methods of synthesizing the same, and methods of using the same to deposit silicon-containing films using vapor deposition processes. The disclosed organosilane precursors have the following formula: SiHx(RN—(CR)n—NR)y(NRR)z wherein R may each independently be H, a C1 to C6 alkyl group, or a C3-C20 aryl or heterocycle group, x+y+z=4 and n, x, y and z are integers, provided that x?3 when y=1. Preferably, n=1 to 3, x=0 to 2, y=1 to 2, and z=1 to 3.

Abstract: Liquid-impregnated textured coatings containing one or more materials on a variety of surfaces are described herein. The coatings can be prepared by chemical vapor deposition techniques or other techniques known in the art. The texture can be random, fractal, or patterned. The texture can be pores, cavities, and/or micro- and/or nanoscale features/structures. The capillary forces arising from the nano- or microscopic texture of the coating stabilizes the liquid within the textured features and at the surface of the coating resulting in non-wetting properties for a variety of surfaces. They coatings may be formed in a single layer or as multiple layers. In order to maximize ease of deposition and processing, the coating may be formed of graded composition to optimize both bulk and surface properties without the need for multiple coatings.

Abstract: A method for subjecting a surface of a substrate to successive surface reactions of precursors according to the principles of atomic layer deposition includes subjecting the surface of the substrate to the first precursor in a first precursor zone and subjecting the surface of the substrate to the second precursor in a second precursor zone, changing the first precursor in the first precursor zone to a subsequent precursor which is different than the first and second precursors, subjecting the surface of the substrate to the subsequent precursor in the first precursor zone, and subjecting the surface of the substrate to the second precursor in the second precursor zone.

Abstract: Provided are an optical device and a manufacturing method thereof. The method of manufacturing an optical device may include providing a substrate structure, and depositing an array including curved structures on the substrate structure. The curved structures may include a crystalline organic compound.

Abstract: A negative-electrode active material comprises a graphite including boron and nitrogen. A ratio R1 satisfies 0.5?R1?1, where R1=SBN/SB, and SB denotes a total peak area of a boron 1s spectrum of the graphite obtained by X-ray photoelectron spectroscopy, and SBN denotes a peak area of a spectrum assigned to boron bonded to nitrogen in the boron 1s spectrum. A ratio R2 satisfies 0<R2?0.05, where R2=SB/(SB+SC+SN), and SC denotes a peak area of a carbon 1s spectrum of the graphite obtained by X-ray photoelectron spectroscopy, and SN denotes a peak area of a nitrogen 1s spectrum of the graphite obtained by X-ray photoelectron spectroscopy.

Abstract: Articles comprising carbon composites are disclosed. The carbon composites contain carbon microstructures having interstitial spaces among the carbon microstructures; and a binder disposed in at least some of the interstitial spaces; wherein the carbon microstructures comprise unfilled voids within the carbon microstructures. Alternatively, the carbon composites contain: at least two carbon microstructures; and a binding phase disposed between the at least two carbon microstructures; wherein the binding phase comprises a binder comprising one or more of the following: SiO2; Si; B; B2O3; a metal; or an alloy of the metal; and wherein the metal is at least one of aluminum; copper; titanium; nickel; tungsten; chromium; iron; manganese; zirconium; hafnium; vanadium; niobium; molybdenum; tin; bismuth; antimony; lead; cadmium; or selenium.

Abstract: A method for manufacturing a semiconductor device includes introducing a gas into a chamber from a showerhead. The chamber has a sidewall surrounding a pedestal. The temperature of the showerhead is increased. The showerhead is thermally connected to the sidewall of the chamber, and a temperature of the sidewall of the chamber is increased by increasing the temperature of the showerhead.

Abstract: Described herein are precursors and methods for forming silicon-containing films. In one aspect, the precursor comprises a compound represented by one of following Formulae A through E below: In one particular embodiment, the organoaminosilane precursors are effective for a low temperature (e.g., 350° C. or less), atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of a silicon-containing film. In addition, described herein is a composition comprising an organoaminosilane described herein wherein the organoaminosilane is substantially free of at least one selected from the amines, halides (e.g., Cl, F, I, Br), higher molecular weight species, and trace metals.

Abstract: A magnetoresistance effect element has favorable symmetry of an MR ratio even if the sign of a bias voltage is different, which is capable of reversing magnetization to a current, which has a high MR ratio. A magnetoresistance effect element includes a laminate in which an underlayer, a first ferromagnetic metal layer, a tunnel barrier layer, and a second ferromagnetic metal layer are laminated in that order, wherein the underlayer is made of one or more selected from a group containing of TiN, VN, NbN, and TaN, or mixed crystals thereof, and wherein the tunnel barrier layer is made of a compound having a spinel structure and represented by the following composition formula (1). (1): AxGa2Oy where A is a non-magnetic divalent cation and represents a cation of at least one element selected from the group consisting of magnesium, zinc, and cadmium, x is a number that satisfies 0<x?2, and y is a number that satisfies 0<y?4.

Abstract: Containment devices and methods of manufacture and assembly are provided. In an embodiment, the device includes at least one microchip element, which includes a containment reservoir that can be electrically activated to open, and a first electronic printed circuit board (PCB) which comprises a biocompatible substrate. The first PCB may have a first side on which one or more electronic components are fixed and an opposed second side on which the microchip element is fixed in electrical connection to the one or more electronic components. The device may further include a second PCB and a housing ring securing the first PCB together with the second PCB. The microchip element may include a plurality of containment reservoirs, which may be microreservoirs, and/or which may contain a drug formulation or a sensor element.

Abstract: A method for selectively depositing a metallic film on a substrate comprising a first dielectric surface and a second metallic surface is disclosed. The method may include, exposing the substrate to a passivating agent, performing a surface treatment on the second metallic surface, and selectively depositing the metallic film on the first dielectric surface relative to the second metallic surface. Semiconductor device structures including a metallic film selectively deposited by the methods of the disclosure are also disclosed.

Abstract: Provided is a method of forming a thin film having a target thickness T on a substrate by an atomic layer deposition (ALD) method. The method includes n processing conditions each having a film growth rate that is different from the others, and determining a1 to an that are cycles of a first processing condition to an n-th processing condition so that a value of |T?(a1×G1+a2×G2+ . . . +an×Gn)| is less than a minimum value among G1, G2, . . . , and Gn, where n is 2 or greater integer, G1, . . . , and Gn respectively denote a first film growth rate that is a film growth rate of the first processing condition, . . . and an n-th film growth rate that is a film growth rate of the n-th processing condition, and the film growth rate denotes a thickness of a film formed per a unit cycle in each of the processing conditions. The film forming method may precisely and uniformly control a thickness of the thin film when an ALD is performed.

Abstract: A substrate processing system includes a first chamber, a second chamber, a gas control part for controlling a gas flow in at least one of the chambers, a gate which can be set in an open state to connect the first chamber and the second chamber, and which can be set in a shutoff state to shut off the first chamber and the second chamber, a first selecting device which permits setting of the gate in the open state on the basis of a recipe, and a second selecting device which permits setting of the gate in the open state only when control with the gas control part satisfies a safety condition, wherein the gate is set in the open state only when setting of the gate in the open state is permitted both by the first selecting device and by the second selecting device.

Abstract: A system and method for Selective Laser Fusing of a 3D part is disclosed. The system may comprise a platform, a gantry, a dispenser, a first press, a laser configured to emit a laser beam onto powdered material, a positive pressure chamber at least partially surrounding the laser, and a controller. The controller may be configured to: (a) receive data that includes a representation of the 3D part sliced into a plurality of layers; (b) rotate on a path about an axis either the platform or simultaneously each of the dispenser, the first press, the positive pressure chamber and the laser; (c) activate the dispenser to deposit the powdered material during (b); (d) activate the laser to emit during (b) the laser beam onto the powdered material to Fuse the powdered material into a layer of the plurality of layers; and (e) repeat (b)-(d) to make the 3D part.

Abstract: A silicon carbide epitaxial wafer manufacturing method includes: a stabilization step of nitriding, oxidizing or oxynitriding and stabilizing silicon carbide attached to an inner wall surface of a growth furnace; after the stabilization step, a bringing step of bringing a substrate in the growth furnace; and after the bringing step, a growth step of epitaxially growing a silicon carbide epitaxial layer on the substrate by supplying a process gas into the growth furnace to manufacture a silicon carbide epitaxial wafer.

Abstract: A semiconductor device and method of manufacture comprise forming a channel-less, porous low K material. The material may be formed using a silicon backbone precursor and a hydrocarbon precursor to form a matrix material. The material may then be cured to remove a porogen and help to collapse channels within the material. As such, the material may be formed with a scaling factor of less than or equal to about 1.8.

Abstract: A liner assembly for a substrate processing system includes a first liner and a second liner. The first liner includes an annular body and an outer peripheral surface including a first fluid guide. The first fluid guide is curved about a circumferential line extending around the first liner. The second liner includes an annular body, an outer rim, an inner rim, a second fluid guide extending between the outer rim and the inner rim, and a plurality of partition walls extending outwardly from the second fluid guide. The second fluid guide is curved about the circumferential line when the first and second liners are positioned within the processing system.

Abstract: The invention to which this application relates is improvements to the provision of Molybdenum and/or Tungsten containing coatings of the type which can be used to improve certain characteristics of the surface of a substrate to which the coating is applied. In one embodiment the coating also includes Ti to provide the advantages of high adhesion, high humidity and wear resistance of the coating and TiB2 to promote the formation of a relatively uniform, dense, coating, so strengthening the coating which is formed and improving the high temperature performance of the coatings.

Abstract: The present disclosure relates to perovskite thin film low-pressure chemical deposition equipment and a usage method thereof, and application of the usage method.

Abstract: The present invention relates to a method for preparing a two-dimensional transition metal dichalcogenide and, more particularly, to a method for preparing a highly uniform two-dimensional transition metal dichalcogenide thin film. More specifically, the present invention is directed to a preparation method for a highly uniform two-dimensional transition metal dichalcogenide thin film at low temperature of 500° C. or below.

Abstract: A method and apparatus for manufacturing a nitrogen-doped CZTSSe layer for a solar cell is disclosed. A substrate is mounted in a vacuum chamber. A plurality of effusion cells are placed within the vacuum chamber in order to evaporate copper, zinc, tin, sulfur, and/or selenium to form elemental vapors in a region proximate the substrate. An RF-based nitrogen source delivers a nitrogen plasma in the region proximal to the substrate. The elemental vapors and the nitrogen plasma form a gas mixture in the region near the substrate, which then react at the substrate to form a CZTSSe absorber layer for a solar cell.

Abstract: Vacuum annealing-based techniques for forming perovskite materials are provided. In one aspect, a method of forming a perovskite material is provided. The method includes the steps of: depositing a metal halide layer on a sample substrate; and vacuum annealing the metal halide layer and methylammonium halide under conditions sufficient to form methylammonium halide vapor which reacts with the metal halide layer and forms the perovskite material on the sample substrate. A perovskite-based photovoltaic device and method of formation thereof are also provided.

Abstract: An apparatus and method for generating a vapor with a compact vaporizer design and exposing the gas and liquid mixture for vaporization to a reduced maximum temperature. A gas and liquid droplet flow through a metal housing configured to heat the gas and liquid droplet mixture flow for vaporization includes directing the gas and liquid droplet mixture through an inlet of the metal housing and flowing the gas through a tortious flow path defined by a plurality of tubular flow passageways arranged around a central axis for vaporization. The flow path is directed through a heat exchanger including one more changes in direction of flow path before flowing into the further tortious flow path described above. Residual liquid droplets may be further vaporized by flowing through a second metal housing configured to heat the gas and liquid droplet mixture for vaporization and having a similar construction to the first metal housing and providing a second tortious flow path.

Abstract: A substrate support device formed of a metal and having a high withstand voltage and a high thermal resistance is provided. A substrate support device according to the present invention includes a plate section formed of a metal; a shaft section connected to the plate section and formed of a metal; a heating element provided in the plate section; and an insulating film formed on a first surface of the plate section, the first surface opposite to the shaft section, by ceramic thermal spraying. The substrate support device may further include an insulating film formed on a second surface of the plate section which intersects the first surface of the plate section approximately perpendicularly.

Abstract: The present invention discloses a highly conducting polyethylenedioxythiphene (PEDOT) flexible paper with a very low sheet resistance and high conductivity and process for preparation thereof, by inducing the polymerization at the interface of two immiscible liquids on a cellulose paper to trigger PEDOT growth along the fibers of the cellulose paper. The present invention discloses the use of the said conducting paper for the preparation of flexible supercapacitor and for the preparation of counter electrode in Dye Sensitized Solar Cell (DSSC).

Abstract: A method of forming a thin film includes forming a niobium-containing film on a substrate by using a niobium precursor composition and a reactant, the niobium precursor composition including a niobium compound represented by Formula (1): Nb(R5Cp)2(L)??Formula (1) (where each R is independently H, a C1 to C6 alkyl group, or R13Si, with each R1 being independently H or a C1 to C6 alkyl group, Cp is a cyclopentadienyl group, and L is a formamidinate, an amidinate, or a guanidinate.

Abstract: A method to increase the damping of a substrate using a face-centered cubic damping material foil containing voids.

Abstract: Methods and apparatus for selective gas injection and extraction for use in a substrate processing chamber are provided herein. In some embodiments, a gas injection and extraction apparatus includes a plate having a plurality of apertures through a thickness of the plate, each aperture of the plurality of apertures having an aperture wall; a plurality of tubes, each tube partially disposed within one of the plurality of apertures, wherein a disposed portion of each of the tubes is spaced apart from at least a portion of the aperture wall of the aperture in which it is disposed, thereby forming an interstice between at least a portion of the aperture wall and the disposed portion of the tube; a gas supply fluidly coupled to each of the tubes; and a vacuum source fluidly coupled to each of the interstices.

Abstract: Described are methods of depositing a titanium aluminum nitride film on a substrate surface with a controlled amount of carbon. The methods include exposing a substrate surface to a titanium precursor, a nitrogen reactant and an aluminum precursor with purges of the unreacted titanium and aluminum precursors and unreacted nitrogen reactants between each exposure.

Abstract: Polymerization process control methods for making polyethylene are provided. The process control methods include performing a polymerization reaction in a polymerization reactor to produce the polyethylene, where ethylene, and optionally one or more comonomers, in the polymerization reaction is catalyzed by an electron donor-free Ziegler-Natta catalyst and an alkyl aluminum co-catalyst. A melt flow ratio (I21/I2) of the polyethylene removed from the polymerization reactor is measured and an amount of long chain branching (LCB) of the polyethylene from the polymerization reactor is controlled by adjusting a weight concentration of the alkyl aluminum co-catalyst present in the polymerization reactor.

Abstract: The native oxide layer on silicon support rods in the Siemens polysilicon production process is removed by heating the rods to a temperature of 1100-1200° C. and contacting the rods with hydrogen at a system pressure of 1.1E5 to 6E6 Pa. Oxide is rapidly removed, reducing overall process time and increasing space time yield. The use of hydrogen, optionally purified from a polysilicon deposition and containing only traces of HCl reduces reactor corrosion and loss of silicon from the support rods.

Abstract: A semiconductor device according to an embodiment includes an n-type SiC region, an electrode in contact with the SiC region, and a region including oxygen, the region provided in the SiC region, the region being provided on an electrode side of the SiC region.

Abstract: This product (10) for removing pollutants from a fluid includes, on the one hand, a porous body (12) having an outer and inner specific surface (14) and, on the other hand, a metallized layer (16), the thickness of which is at most nanoscale, covering at least part of the outer and inner specific surface (14) of the porous body (12). The metallized layer (16) includes at least a metal (Ag) bonded to the porous body (12) by chemical bonds (18) that result from the action of intramolecular forces. Further, the metallized layer (16) includes silicon (Si) also bonded to the porous body (12) by chemical bonds (18) resulting from the action of intramolecular forces.

Abstract: A method of depositing a metal seed for performing bottom-up gapfill of features of a substrate includes providing a substrate including a plurality of features; flowing a dilute metal precursor solution into the features, wherein the dilute metal precursor solution includes a metal precursor and a dilution liquid; evaporating the dilution liquid to locate the metal precursor at bottoms of the plurality of features; exposing the substrate to a plasma treatment to reduce the metal precursor to at least one of a metal or a metal alloy and to form a seed layer; performing a heat treatment on the substrate; and using a selective gapfill process to fill the features with a transition metal in contact with the seed layer.

Abstract: The present inventors have conceived of a multi-stage process gas delivery system for use in a substrate processing apparatus. In certain implementations, a first process gas may first be delivered to a substrate in a substrate processing chamber. A second process gas may be delivered, at a later time, to the substrate to aid in the even dosing of the substrate. Delivery of the first process gas and the second process gas may cease at the same time or may cease at separate times.

Abstract: Methods and apparatuses for controlling precursor flow in a semiconductor processing tool are disclosed. A method may include flowing gas through a gas line, opening an ampoule valve(s), before a dose step, to start a flow of precursor from the ampoule to a process chamber through the gas line, closing the ampoule valve(s) to stop the precursor from flowing out of the ampoule, opening a process chamber valve, at the beginning of the dose step, to allow the flow of precursor to enter the process chamber, and closing the process chamber valve, at the end of the dose step, to stop the flow of precursor from entering the process chamber. A controller may include at least one memory and at least one processor and the at least one memory may store instructions for controlling the at least one processor to control precursor flow in a semiconductor processing tool.

Abstract: A hot gas path component for an engine may generally include a substrate extending between an outer surface and an inner surface opposite the outer surface. The outer surface may be configured to be exposed to a hot gas path of the engine. In addition, the substrate may be formed from a non-metallic composite material. The hot gas path component may also include a thermal coating disposed on the inner surface of the substrate. The thermal coating may be applied to the inner surface so as to have a non-uniform distribution along at least a portion of the inner surface, wherein the non-uniform distribution provides for change in a thermal gradient experienced across the hot gas path component between the outer and inner surfaces of the substrate.

Abstract: A formation method of a silicon film which contributes to improvements in cycle characteristics and an increase in charge/discharge capacity and can be used as an active material layer is provided. In addition, a manufacturing method of a power storage device including the silicon film is provided. The formation method is as follows. A crystalline silicon film is formed over a conductive layer by an LPCVD method. The supply of a source gas is stopped and heat treatment is performed on the silicon film while the source gas is exhausted. The silicon film is grown to have whisker-like portions by an LPCVD method while the source gas is supplied into the reaction space. A power storage device is manufactured using, as an active material layer included in a negative electrode, the silicon film grown to have whisker-like portions.

Abstract: In some aspects, a method for manufacturing graphene applied to grow graphene layers on an insulated surface of a work piece, includes: preparing a work piece; preparing a catalyst having a gasiform transition metal element; preparing a carbon feedstock; preparing hydrogen; mixing the carbon feedstock, the hydrogen and the catalyst over the work piece, the flow rate of the catalyst is between 4 sccm and 1,200 sccm; and warming the carbon feedstock, the hydrogen and the catalyst to the temperature between 200 degrees and 1,200 degrees centigrade, and maintaining the pressure inside the chamber between 1 mTorr and 800 Torr to make the catalyst source react with the carbon feedstock and the hydrogen so as to catalyze the decomposition of carbon feedstock to generate a plurality of carbon atoms, and the plurality of carbon atoms form the graphene layers directly on the insulated substrates of the work piece.

Abstract: Antimony oxide thin films are deposited by atomic layer deposition using an antimony reactant and an oxygen source. Antimony reactants may include antimony halides, such as SbCl3, antimony alkylamines, and antimony alkoxides, such as Sb(OEt)3. The oxygen source may be, for example, ozone. In some embodiments the antimony oxide thin films are deposited in a batch reactor. The antimony oxide thin films may serve, for example, as etch stop layers or sacrificial layers.

Abstract: A method for template fabrication of ultra-precise nanoscale shapes. Structures with a smooth shape (e.g., circular cross-section pillars) are formed on a substrate using electron beam lithography. The structures are subject to an atomic layer deposition of a dielectric interleaved with a deposition of a conductive film leading to nanoscale sharp shapes with features that exceed electron beam resolution capability of sub-10 nm resolution. A resist imprint of the nanoscale sharp shapes is performed using J-FIL. The nanoscale sharp shapes are etched into underlying functional films on the substrate forming a nansohaped template with nanoscale sharp shapes that include sharp corners and/or ultra-small gaps. In this manner, sharp shapes can be retained at the nanoscale level. Furthermore, in this manner, imprint based shape control for novel shapes beyond elementary nanoscale structures, such as dots and lines, can occur at the nanoscale level.

Abstract: The present invention provides a method for forming an oxide film by which normal formation of an oxide film is always achieved without receiving an influence of a change in the atmosphere, a metal oxide film having a low resistance can be formed, and a high efficiency of film formation is obtained. In the present invention, a raw material solution containing an alkyl compound is formed into a mist and ejected to a substrate (100) in the atmosphere. Additionally, an oxidizing agent that exerts an oxidizing effect on the alkyl compound is supplied to the mist of the raw material solution. Through the above-described processes, an oxide film is formed on the substrate in the present invention.