Abstract: Provided is a thin film vapor deposition method capable of implementing ALD or cyclic CVD without the need for operating a valve and vapor depositing a thin film with higher productivity over the conventional method. A thin film vapor deposition apparatus includes a substrate supporting portion having a plurality of substrate mounting portions; and a gas jetting portion comprising a source gas supplier, a reaction gas supplier, and a mixture gas supplier, provided at the upper portion of the substrate supporting portion in which the source gas supplier, the reaction gas supplier and the mixture gas supplier are radially placed, wherein the substrate supporting portion and the gas jetting portion are provided so as to be able to relatively rotate.

Abstract: A method of forming a material over a substrate includes performing at least one iteration of the following temporally separated ALD-type sequence. First, an outermost surface of a substrate is contacted with a first precursor to chemisorb a first species onto the outermost surface from the first precursor. Second, the outermost surface is contacted with a second precursor to chemisorb a second species different from the first species onto the outermost surface from the second precursor. The first and second precursors include ligands and different central atoms. At least one of the first and second precursors includes at least two different composition ligands. The two different composition ligands are polyatomic or a lone halogen. Third, the chemisorbed first species and the chemisorbed second species are contacted with a reactant which reacts with the first species and with the second species to form a reaction product new outermost surface of the substrate.

Abstract: A method for manufacturing a carbon nanostructure according to the present invention includes a preparation step of preparing a base body, an oxidization step and a step of growing a carbon nanostructure. In the step of preparing a base body, a base body with at least a part of a contact portion or an integral portion of a catalyst member and a separation member having been oxidized is prepared. In the step of growing a carbon nanostructure, a carbon nanostructure is grown in a separation interface region between the catalyst member and the separation member. The step of growing a carbon nanostructure includes at least one of a step of locally supplying a source gas to a portion of the catalyst member facing the separation interface region where the carbon nanostructure is being grown, and a step of locally heating the separation interface region.

Abstract: The invention relates to lubricants for magnetic recording media, and in particular, to such lubricants containing cyclotriphosphazene. Methods for preparing the lubricants are also disclosed.

Abstract: Implementations described herein inject feedstock gases into multiple zones of an inductively coupled plasma processing reactor with minimal or no effect on process skew. In one embodiment, an integrated gas and coil assembly is provided that includes an upper surface and a lower surface, a first RF field applicator coil bounded at the upper surface and the lower surface, a second RF field applicator coil circumscribed by the first RF field applicator coil and bounded at the upper surface and the lower surface and an RF shield disposed between the first and second RF field generator wherein the RF shield extends from the lower surface and past the upper surface. The RF shield may have at least one gas channel disposed therethrough.

Abstract: The fabrication of small-scale structures is disclosed. A unit-cell of a small-scale structure with non-planar features is fabricated by forming a membrane on a suitable material. A pattern is formed in the membrane and a portion of the substrate underneath the membrane is removed to form a cavity. Resonators are then directionally deposited on the wall or sides of the cavity. The cavity may be rotated during deposition to form closed-loop resonators. The resonators may be non-planar. The unit-cells can be formed in a layer that includes an array of unit-cells.

Abstract: A method of fabricating a carbon fiber-reinforced article includes providing carbon fibers that have surfaces that include an initial interfacial bonding strength capacity with respect to bonding with boron nitride. The surfaces are then modified to reduce the initial interfacial bonding strength capacity. A layer of boron nitride is then deposited on the modified surfaces and the carbon fibers are then embedded in a ceramic matrix. A carbon fiber-reinforced article includes the carbon fibers, the layer of boron nitride on the surfaces of the carbon fibers, and the ceramic matrix. The article exhibits non-brittle fracture.

Abstract: A solar cell. The solar cell includes a substrate, a first layer comprising a first copper-based material deposited upon the substrate, the first copper-based material electrically attracted to the substrate or to a first optional deposit layer deposited between the substrate and the first layer, and a second layer comprising a second copper-based material deposited upon the first layer or an second optional deposit layer deposited between the first layer and the second layer, the second copper-based material electrically attracted to the first layer or to the second optional deposit layer, wherein the first copper-based material and the second copper-based material are selected from the group consisting of copper indium gallium (di)selenide (CIGS), copper indium selenium (CIS), and cadmium sulfate (CdS).

Abstract: The present disclosure relates to a wafer transfer robot having a robot blade that can be used to handle substrates that are patterned on both sides without causing warpage of the substrates. In some embodiments, the wafer transfer robot has a robot blade coupled to a transfer arm that varies a position of the robot blade. The robot blade has a wafer reception area that receives a substrate. Two or more spatially distinct contact points are located at positions along a perimeter of the wafer reception area that provide support to opposing edges of the substrate. The two or more contact points are separated by a cavity in the robot blade. The cavity mitigates contact between a backside of the substrate and the robot blade, while providing support to opposing sides of the substrate to prevent warpage of the substrate.

Abstract: A method and system for validating energy measurement in a high pressure gas distribution network. The method comprises the steps of calculating a validation energy value using an artificial neural network (ANN) engine based on measured parameters associated with a gas flow in the gas distribution network; measuring an actual energy value of the gas flow; and comparing the validation energy value and the actual energy value, wherein the actual energy value is validated if the validation energy value and the actual energy value are substantially equal.

Abstract: A method for manufacturing a silicon carbide semiconductor device includes the following steps. A silicon carbide substrate is prepared. A first heating step of heating the silicon carbide substrate in an atmosphere of oxygen is performed. A second heating step of heating the silicon carbide substrate to a temperature of 1300° C. or more and 1500° C. or less in an atmosphere of gas containing nitrogen atoms or phosphorus atoms is performed after the first heating step. A third heating step of heating the silicon carbide substrate in an atmosphere of a first inert gas is performed after the second heating step. Thus, the silicon carbide semiconductor device in which threshold voltage variation is small, and a method for manufacturing the same can be provided.

Abstract: Provided is a substrate processing apparatus capable of suppressing inferiority when heat treatment is controlled using a temperature sensor.

Abstract: A system for image analysis and a method thereof are disclosed. In one embodiment, the system includes a detector configured to receive an image of a sample, isolate particles from a background image of the sample image and detect positions of the isolated particles and a first operator configured to calculate a static degree of randomness values of the particles using Lennard-Jones potentials based on the detected positions. The system may further include a second operator configured to obtain a dynamic degree of randomness values of particles based at least in part on the sum of tensile forces between particles by implicit integration added until the particles reach a dynamic equilibrium, and calculate a positional degree of randomness of particles based at least in part on subtraction of the dynamic degree of randomness values from the static degree of randomness values.

Abstract: A method for forming a resistive random access memory (RRAM) device is disclosed. The method comprises forming a first electrode, forming a resistive switching oxide layer comprising a metal oxide by thermal atomic layer deposition (ALD), doping the resistive switching oxide layer with a metal dopant different from metal forming the metal oxide, and forming a second electrode by thermal atomic layer deposition (ALD), where the resistive switching layer is interposed between the first electrode and the second electrode. In some embodiments, forming the resistive switching oxide may be performed without exposing a surface of the switching oxide layer to a surface-modifying plasma treatment after depositing the metal oxide.

Abstract: According to an embodiment of present disclosure, a method of forming a carbon film on a substrate to be processed is provided. The method includes loading a substrate to be processed with a carbon film formed thereon into a processing chamber of a film forming apparatus (Process 1), and thermally decomposing a hydrocarbon-based carbon source gas in the processing chamber to form a carbon film on the substrate to be processed (Process 2). In Process 2, a film forming temperature of the carbon film is set to a temperature less than a thermal decomposition temperature of a simple substance of the hydrocarbon-based carbon source gas without plasma assistance, the hydrocarbon-based carbon source gas and a thermal decomposition temperature drop gas containing a halogen element are introduced into the processing chamber, and a non-plasma thermal CVD method is performed.

Abstract: A device for passing a biopolymer molecule includes a nanochannel formed between a surface relief structure, a patterned layer forming sidewalls of the nanochannel and a sealing layer formed over the patterned layer to encapsulate the nanochannel. The surface relief structure includes a three-dimensionally rounded surface that reduces a channel dimension of the nanochannel at a portion of nanochannel and gradually increases the dimension along the nanochannel toward an opening position, which is configured to receive a biopolymer.

Abstract: Techniques for producing an organic electroluminescent element while collecting a vapor deposition material that is vapor-deposited on a vapor deposition device, collecting a vapor-deposited film by use of a collection device, and producing an organic electroluminescent element by use of a collection device. In one example, a film is provided on at least a part of a surface of each of a vapor deposition preventing plate and a shutter of a vacuum chamber on which surface vapor deposition particles are vapor-deposited, the film being provided so as to be peeled off from the each of the vapor deposition preventing plate and the shutter, and the film being made of a material differing in at least one of a melting point, a sublimation point, solubility in a given solvent, microbial biodegradability, and photodegradability from a material of which a vapor-deposited film that is formed on the film is made.

Abstract: Systems and methods of use for continuous analyte measurement of a host's vascular system are provided. In some embodiments, a continuous glucose measurement system includes an electrochemical sensor incorporating a silver/silver chloride reference electrode, wherein a capacity of the reference electrode is controlled.

Abstract: Some embodiments include methods utilizing atomic layer deposition to form material containing silicon and nitrogen (e.g., silicon nitride). The atomic layer deposition uses SiI4 as one precursor and uses a nitrogen-containing material as another precursor. Some embodiments include methods of forming a structure in which a chalcogenide region is formed over a semiconductor substrate; and in which SiI4 is used as a precursor during formation of silicon nitride material directly against a surface of the chalcogenide region.

Abstract: An RF ablation device comprises an electrode including a DLC coating deposited on at least a portion thereof. A method of forming an RF ablation device, comprises forming a DLC coating on a portion of a metallic electrode.

Abstract: A method of forming a silicon-containing dielectric material. The method includes forming a plasma comprising nitrogen radicals, absorbing the nitrogen radicals onto a substrate, and exposing the substrate to a silicon-containing precursor in a non-plasma environment to form monolayers of a silicon-containing dielectric material on the substrate. Additional methods are also described, as are semiconductor device structures including the silicon-containing dielectric material and methods of forming the semiconductor device structures.

Abstract: A method of fabricating a semiconductor device, such as a three-dimensional monolithic NAND memory string, includes providing an opening having a different sidewall material exposed on a sidewall of the opening than a bottom material exposed on a bottom of the opening, selectively forming a sacrificial material on the bottom of the opening but not on the sidewall of the opening, selectively forming a first layer on the sidewall of the opening but not on the sacrificial material located on the bottom of the opening, and selectively removing the sacrificial material to expose the bottom material on the bottom of the opening such that the first layer remains on the sidewall of the opening.

Abstract: Wafer treatment process and apparatus is provided with a wafer carrier arranged to hold wafers and to inject a fill gas into gaps between the wafers and the wafer carrier. The apparatus is arranged to vary the composition, flow rate, or both of the fill gas so as to counteract undesired patterns of temperature non-uniformity of the wafers.

Abstract: A method of fabricating a semiconductor device includes forming an interface layer on a substrate, forming a first gate insulating layer having a first dielectric constant on the interface layer, forming a second gate insulating layer having a second dielectric constant smaller than the first dielectric constant on the first gate insulating layer, annealing the substrate, nitriding a resultant of the annealed first and second gate insulating layers to form a nitrided gate insulator, forming a work function control layer on the nitride gate insulator, and forming a metal gate electrode on the work function control layer. At least one of the work function control layer and the metal gate electrode is of or includes aluminum (Al).

Abstract: The invention relates to a process for drying a wet film including the steps of: a) determining a desired loss on drying (LOD) for the wet film; b) determining a relationship between LOD and a rate of temperature rise of the wet film or a rate of change of the rate of temperature rise of the wet film; c) drying a wet film with continuous monitoring of the temperature of the wet film; and d) continuously adjusting one or more drying parameters to maintain the rate of temperature rise of the wet film or the rate of change of the rate of temperature rise of the wet film that produces the desired LOD.

Abstract: A structure for preparing an substantially aligned array of carbon nanotubes include a substrate having a first side and a second side, a buffer layer on the first side of the substrate, a catalyst on the buffer layer, and a plurality of channels through the structure for allowing a gaseous carbon source to enter the substrate at the second side and flow through the structure to the catalyst. After preparing the array, a fiber of carbon nanotubes may be spun from the array. Prior to spinning, the array can be immersed in a polymer solution. After spinning, the polymer can be cured.

Abstract: A method of operating a film forming apparatus includes forming a carbon film on each of surfaces of a plurality of objects held by a holding unit in a processing container and performing a cleaning process with a cleaning gas to remove an unnecessary carbon film adhered on a inside of the processing container, wherein the method further includes, before the forming of the carbon film, forming, on a surface of a member contacting a processing space in the processing container, a tolerant pre-coating film which has a tolerance to the cleaning gas and improves adhesion of the carbon film to the surface of the member. Accordingly, the adhesion of the carbon film is improved, and further, the tolerant pre-coating film remains even when the cleaning process of removing the unnecessary carbon film is performed.

Abstract: Apparatus for high productivity combinatorial (HPC) processing of semiconductor substrates and HPC methods are described. An apparatus includes a showerhead and two or more pressure-controlled one-way valves connected to the showerhead and used for controlling flow of different processing gases into the showerhead. The pressure-controlled one-way valves are not externally controlled by any control systems. Instead, these valves open and close in response to preset conditions, such as pressure differentials and/or flow differentials. One example of such pressure-controlled one-way valves is a check valve. These valves generally allow the flow only in one direction, i.e., into the showerhead. Furthermore, lack of external controls and specific mechanical designs allow positioning these pressure-controlled one-way valves in close proximity to the showerhead thereby reducing the dead volume between the valves and the showerhead and also operating these valves at high temperatures.

Abstract: A method of forming a thin film on a substrate which includes a step of contacting a surface with a precursor compound having a transition metal and one or more alkyl-1,3-diazabutadiene ligands is provided. The resulting modified surface is then contacted with an activating compound.

Abstract: A method for protecting an electronic device comprising an organic device body. The method involves the use of a hybrid layer deposited by chemical vapor deposition. The hybrid layer comprises a mixture of a polymeric material and a non-polymeric material, wherein the weight ratio of polymeric to non-polymeric material is in the range of 95:5 to 5:95, and wherein the polymeric material and the non-polymeric material are created from the same source of precursor material. Also disclosed are techniques for impeding the lateral diffusion of environmental contaminants.

Abstract: Apparatus and systems may operate to provide a first reactant as a gas that flows under reduced atmospheric pressure to interact with a surface, such as a tool body surface, the interaction confined to a passage within the tool body, wherein the passage includes the surface and extends without interruption from an entrance end of the passage to an exit end of the passage. Additional activity may include providing a second reactant as a gas under the reduced atmospheric pressure, subsequent to the first reactant, to interact with the surface of the tool body; and repeated provision of the first and second reactants until a selected coating thickness on the surface is formed. Additional apparatus, systems, and methods are disclosed.

Abstract: Provided is a method of forming a film of metal compound of first and second materials on an object to be processed, one of the first and second materials being metal, which includes: supplying a raw material gas containing the first material to the object such that the first material is adsorbed onto the object; supplying a raw material gas containing the second material to the object with the first material adsorbed thereon such that the second material is adsorbed onto the object with the first material adsorbed thereon; and supplying a third material different from the first and second materials onto the first and second materials adsorbed onto the object such that the first to third materials are chemically combined with one another.

Abstract: Provided are methods of depositing hafnium or zirconium containing metal alloy films. Certain methods comprise sequentially exposing a substrate surface to alternating flows of an organometallic precursor and a reductant comprising M(BH4)4 to produce a metal alloy film on the substrate surface, wherein M is selected from hafnium and zirconium, and the organometallic precursor contains a metal N. Gate stacks are described comprising a copper barrier layer comprising boron, a first metal M selected from Hf and Zr, and a second metal N selected from tantalum, tungsten, copper, ruthenium, rhodium, cobalt and nickel; and a copper layer overlying the copper barrier seed layer.

Abstract: The inventive concept provides porous, low-k dielectric materials and methods of manufacturing and using the same. In some embodiments, porous, low-k dielectric materials are manufactured by forming a porogen-containing dielectric layer on a substrate and then removing at least a portion of said porogen from the layer.

Abstract: Methods and apparatus for gas delivery are disclosed herein. In some embodiments, a gas delivery system includes an ampoule for storing a precursor in solid or liquid form, a first conduit coupled to the ampoule and having a first end coupled to a first gas source to draw a vapor of the precursor from the ampoule into the first conduit, a second conduit coupled to the first conduit at a first junction located downstream of the ampoule and having a first end coupled to a second gas source and a second end coupled to a process chamber, and a heat source configured to heat the ampoule and at least a first portion of the first conduit from the ampoule to the second conduit and to heat only a second portion of the second conduit, wherein the second portion of the second conduit includes the first junction.

Abstract: A device includes a substrate having a front side and a backside, the backside being opposite the front side. An isolation layer is disposed on the front side of the substrate, wherein first portions of isolation layer and the substrate are in physical contact. A through substrate via (TSV) extends from the front side to the backside of the substrate. An oxide liner is on a sidewall of the TSV. The oxide liner extends between second portions of the substrate and the isolation layer. A dielectric layer having a metal pad is disposed over the isolation layer on the front side of the substrate. The metal pad and the TSV are formed of a same material.

Abstract: Disclosed is a method for forming a Ge—Sb—Te film, in which a substrate is disposed within a process chamber, a gaseous Ge material, a gaseous Sb material, and a Te material are introduced into the process chamber, so that a Ge—Sb—Te film formed of Ge2Sb2Te5 is formed on the substrate by CVD. The method for forming a Ge—Sb—Te film comprises: a step (step 2) wherein the gaseous Ge material and the gaseous Sb material or alternatively a small amount of the gaseous Te material not sufficient for formed of Ge2Sb2Te5 in addition to the gaseous Ge material and the gaseous Sb material are introduced into the process chamber so that a precursor film, which does not contain Te or contains Te in an amount smaller than that in Ge2Sb2Te5, is formed on the substrate; and a step (step 3) wherein the gaseous Te material is introduced into the process chamber and the precursor film is caused to adsorb Te, so that the Te concentration in the film is adjusted.

Abstract: The present invention provides methods for uniform growth of nanostructures such as nanotubes (e.g., carbon nanotubes) on the surface of a substrate, wherein the long axes of the nanostructures may be substantially aligned. The nanostructures may be further processed for use in various applications, such as composite materials. The present invention also provides systems and methods for growth of nanostructures, including batch processes and continuous processes. For example, in certain embodiments, a system for growing nanostructures is provided which includes a growth substrate, a region able to expose the surface of the growth substrate to a set of conditions selected to cause catalytic formation of nanostructures on the surface of the growth substrate, and a region able to expose the surface of the growth substrate to a set of conditions selected to remove nanostructures from the surface of the growth substrate.

Abstract: Chemical vapor deposition apparatus comprises a process chamber, a bubbler for supplying a volatile precursor to the chamber, a vacuum pump for drawing an exhaust gas from the process chamber, an abatement device for treating the exhaust gas, and a bypass line for conveying the precursor from the bubbler to the abatement device, the bypass line bypassing both the process chamber and the vacuum pump.

Abstract: A carbon nanotube array suitable for use in labeling is provided. The carbon nanotube array includes at least two different isotope-doped carbon nanotube sub-arrays. Each isotope-doped carbon nanotube sub-array includes a plurality of carbon nanotubes. The carbon nanotubes in different isotope-doped carbon nanotube sub-arrays are composed of different kinds of carbon isotopes.

Abstract: Provided is a method for producing a substrate with a metal body. This method provides excellent film-forming properties (reflectance and adhesion), is easy to be used on a large substrate, and can be carried out at a low cost. The method includes the steps of: (A) heating a complex to a first temperature so as to generate a vapor of the complex; and (B) contacting the vapor with a substrate heated to a second temperature that is not higher than the first temperature so as to form a metal body containing a central metal of the complex, either in uncombined form or as a compound thereof (exclusive of the complex), on at least part of a surface of the substrate. The second temperature in step (B) is lower than the decomposition temperature of the complex. The central metal of the complex is aluminum or titanium.

Abstract: Organic light-emitting devices having a multi-component organic electroluminescent layer. The organic electroluminescent layer comprises a phosphorescent dopant and a host material that is a mixture of at least three different compounds: a wide band gap host compound, an electron-transporting host compound, and a hole-transporting host compound. Use of such a multi-component organic electroluminescent layer may improve device efficiency and lifetime.

Abstract: A liquid ejection head includes a substrate and a flow path forming member on the substrate, the flow path forming member forming an ejection orifice from which a liquid is ejected and a liquid flow path. The flow path forming member is formed of an inorganic material, contains at least a flow path side wall portion forming a side of the liquid flow path and has a member covering a substrate side end part of an inner wall of the flow path side wall portion.

Abstract: The present invention generally relates to devices comprising graphene and a conductive polymer (e.g., poly(3,4-ethylenedioxythiophene) (PEDOT)), and related systems and methods. In some embodiments, the conductive polymer is formed by oxidative chemical vapor deposition.

Abstract: A vacuum pumping system comprises a primary foreline for receiving a gas stream from an outlet of a chamber, a first vacuum pump for evacuating the chamber, a second vacuum pump for evacuating the chamber, a first secondary foreline for conveying gas from the primary foreline to the first vacuum pump, a second secondary foreline for conveying gas from the primary foreline to the second vacuum pump, and valve means for selectively connecting a chosen one of the first and second secondary forelines to the primary foreline. The condition of the vacuum pumps is monitored during use. When both vacuum pumps are operating normally, the valve means is controlled to divert a first reactant-rich gas from the primary foreline into the first secondary foreline, and to divert a second reactant-rich gas from the primary foreline to the second secondary foreline, thereby inhibiting mixing of the first and second reactants within the vacuum pumps.

Abstract: A film forming apparatus for forming a polyimide film on a substrate installed within a film forming container. The apparatus includes: a first vaporizer configured to vaporize a first raw material in a solid state, and supply the vaporized first raw material gas to the substrate; a second vaporizer configured to vaporize a second raw material in a liquid state, and supply the vaporized second raw material gas to the substrate; a first pressure measurement unit configured to measure the internal pressure of the first vaporizer; a second pressure measurement unit configured to measure the internal pressure of the second vaporizer; and a controller configured to calculate a supply amount of the first and second raw material gases by the first and second pressure measurement units, respectively, and control the first and second vaporizers to supply the first and second raw material gases in a uniform amount.

Abstract: A semiconductor structure comprising aluminum oxide. The semiconductor structure comprises a dielectric material overlying a substrate. The aluminum oxide overlies the dielectric material in a first region of the structure. A second region of the structure includes a first titanium nitride portion overlying the dielectric material, magnesium over the first titanium nitride portion, and a second titanium nitride portion over the magnesium. Methods of forming the semiconductor structure including aluminum oxide are also disclosed.

Abstract: There is provided a method for manufacturing a carbon nanostructure with reduced occurrence of a bend and the like. The method for manufacturing a carbon nanostructure according to the present invention includes the steps of: preparing a base body formed of a catalyst member including a catalyst and a separation member that are in contact with or integral with each other (preparation step); oxidizing at least a part of a contact portion or integral portion of the catalyst member and the separation member (oxidation step); bringing a carbon-containing source gas into contact with the catalyst member and/or the separation member (CNT growth step); and growing a carbon nanostructure (CNT growth step). In the CNT growth step, the carbon nanostructure is grown in a separation interface region between the catalyst member and the separation member, by heating the base body while separating the separation member from the catalyst member.

Abstract: Embodiments of the invention provide dielectric films and low-k dielectric films and methods for making dielectric and low-k dielectric films. Dielectric films are made from carbosilane-containing precursors. In embodiments of the invention, dielectric film precursors comprise attached porogen molecules. In further embodiments, dielectric films have nanometer-dimensioned pores.

Abstract: A substrate processing apparatus capable of suppressing generation of by-products in a buffer space in even a single-wafer apparatus using the buffer space, and a method of manufacturing a semiconductor device are provided. The substrate processing apparatus includes a process chamber including a placement unit having a placing surface whereon a substrate is placed, a shower head including a buffer chamber and installed at upstream side of the process chamber, a gas supply system configured to alternately supply at least two types of gases into the process chamber via the buffer chamber of the shower head, and a heating unit configured to heat the buffer chamber to a first temperature and the process chamber to a second temperature which is higher than the first temperature while the at least two types of gases are supplied via the gas supply system.