Abstract: A method for performing an operation of a memory arrangement, comprising receiving a command at a layer of a computer system, determining if the command received is one of a first command type or a second command type, determining a type of command that is able to be received and is capable of operation of the memory arrangement, comparing the type of command capable of operation of the memory arrangement and the received command at the layer, and converting the command received at the layer to a command type capable of operation of the memory arrangement when the type of command received at the layer is different than type of command that is able to be received and is capable of operation of the memory arrangement.

Abstract: A data storage device includes a memory device and a memory controller. The memory controller is configured to configure a predetermined memory block as an active memory block to receive data from a host device and accordingly record a plurality of logical addresses in a first mapping table. In response to a determination of recommending for activating one or more sub-regions of the memory device or delivering one or more Host Performance Booster (HPB) entries is required, the memory controller is further configured to update a second mapping table based on the first mapping table before delivering the HPB entries to the host device. The memory controller is further configured to generate the HPB entries according to the second mapping table after the second mapping table has been updated based on the first mapping table and deliver a packet comprising the HPB entries to the host device.

Abstract: The invention relates to a data processing system and a date processing method. The data processing system is configured to perform a hardware transactional memory (HTM) transaction. The data processing system comprises a byte-addressable nonvolatile memory for persistently storing data and a processor being configured to execute an atomic HTM write operation in connection with committing the HTM transaction by writing an indicator to the nonvolatile memory indicating the successful commit of the HTM transaction.

Abstract: The invention provides a memory device including a memory array, an internal memory, and a processor. The memory array stores node mapping tables for access data in the memory array. The internal memory includes a namespace table and an index table The processor obtains a data access command from a host device to determine whether a data of the data access command contains one of the NSIDs, assigns the at least one internal NSID to the data of the data access command according to the data access command in response to the data of the data access command that does not contain the namespace identifier, and, the processor manages the data with the internal NSID by the namespace table and the index table.

Abstract: The present technology relates to a memory controller capable of shortening a time required for a read operation by storing a map segment output based on a result of counting the number of times a map entry is called in a host. The memory controller controlling a memory device includes a central processing device configured to receive a read request from a host and perform an operation for outputting data corresponding to the read request to the host, and a flash translation layer configured to search for a map entry indicating a mapping relationship between a logical block address and a physical block address by receiving the logical block address corresponding to the read request from the central processing device, and store a read count table based on a result of searching the map entry.

Abstract: A memory control method, a memory storage device, and a memory control circuit unit are provided. The memory control method includes: programming multiple first memory cells in a first physical erasing unit in a rewritable non-volatile memory module; and applying an electronic pulse to at least one word line in the rewritable non-volatile memory module. The at least one word line is coupled to multiple second memory cells in the first physical erasing unit. The second memory cells include the first memory cells. The electronic pulse is not configured to read, program, or erase the second memory cells.

Abstract: A system includes a memory device, and a processing device, operatively coupled to the memory device, to perform operations including receiving a request to sequentially write data to a block of a memory device, in response to receiving the request, writing the data to the block to obtain sequentially written data, initiating accumulation of logical-to-physical (L2P) mapping data corresponding to the sequentially written data, determining that a criterion for terminating the accumulation of the L2P mapping data is satisfied, in response to determining that the criterion is satisfied, terminating the accumulation of the L2P mapping data to obtain accumulated L2P mapping data, and updating an L2P mapping data structure based on the accumulated L2P mapping data.

Abstract: A non-volatile data storage device includes memory cells arranged in a plurality of blocks and a memory controller coupled to the memory cells for controlling operations of the memory cells. The memory controller is configured to determine if a given block is a bad m-bit multi-level block. In an m-bit multi-level block, each memory cell is an m-bit multi-level cell (MLC), m being an integer equal to or greater than 2. Upon determining that the given block is a good m-bit multi-level block, the memory controller assigns the given block to be an m-bit multi-level user block. Upon determining that the given block is a bad m-bit multi-level block, the memory controller determines if the given block is a good n-bit block. In an n-bit block, each memory cell is an n-bit cell, n being an integer less than m. Upon determining that the given block is a good n-bit block, the memory controller assigns the given block to be an n-bit user block or an n-bit write-buffer block.

Abstract: Disclosed is a system, and a method of using the system, that includes a memory component and a processing device. The processing device provides, to a host system, a failure notification that includes an indication of memory cell(s) of the memory device storing a data that was corrupted during a memory operation. The processing device then receives a replacement data from the host system. The replacement data is provided in response to the host system identifying a range of logical addresses corresponding to the corrupted data, based on geometric parameters of the memory device and the failure notification.

Abstract: An example method for managing a memory device includes a non-volatile memory. The example method further includes providing a first time-stamp to the memory device, wherein the first time-stamp is a power-down time-stamp of the memory device, storing the first time-stamp, associating the first time-stamp with at least one region of the non-volatile memory, providing a second time-stamp to the memory device, wherein the second time-stamp is a subsequent power-up time-stamp of the memory device, associating the second time-stamp with the at least one region of the non-volatile memory, determining a difference time between the first time-stamp and the second time-stamp, and, based on the difference time, performing a refresh operation of the at least one region of the non-volatile memory. Further, a related memory device is disclosed, as well as a method for measuring the off-time of a memory device.

Abstract: Methods, systems, and devices for status check using signaling are described. A memory system may receive ready signals from memory dies. The ready signal may indicate whether a memory die is available to receive a command. The memory system may generate an indicator of whether the memory die is available based on values of ready signals. The memory system may output the indicator to a controller over one or more pins based on generating the indicator.

Abstract: One embodiment provides a network system. The network system includes an application layer to execute one or more networking applications to generate or receive data packets having flow identification (ID) information; and a packet processing layer having profiling circuitry to generate a sketch table indicative of packet flow count data; the sketch table having a plurality of buckets, each bucket includes a first section including a plurality of data fields, each data field of the first section to store flow ID and packet count data, each bucket also having a second section having a plurality of data fields, each data field of the second section to store packet count data.

Abstract: An apparatus includes a media management superblock component. The media management superblock component determines that a quantity of blocks of a superblock of a non-volatile memory array are bad blocks. The media management superblock component compares the quantity of bad blocks to a bad block criteria. The media management superblock component writes host data to the superblock with the quantity of bad blocks in response to the quantity of bad blocks meeting the bad block criteria.

Abstract: The present disclosure includes apparatuses and methods for performing data restore operations in memory. An embodiment includes a memory, and a controller configured to perform a data restore operation on data stored in the memory using a first table and a second table stored in the controller, wherein the first table includes a current mapping of the data stored in the memory that is based on a previous assessment of previous error rates associated with the data stored in the memory, and the second table includes a new mapping of the data stored in the memory that is based on a current assessment of current error rates associated with the data stored in the memory.

Abstract: An apparatus, system, and method for controlling data transfer to an output port of a serial data link interface in a semiconductor memory is disclosed. In one example, a flash memory device may have multiple serial data links, multiple memory banks and control input ports that enable the memory device to transfer the serial data to a serial data output port of the memory device. In another example, a flash memory device may have a single serial data link, a single memory bank, a serial data input port, a control input port for receiving output enable signals. The flash memory devices may be cascaded in a daisy-chain configuration using echo signal lines to serially communicate between memory devices.

Abstract: A method of managing blocks in a flash memory includes: detecting states of blocks of a reserved area in the flash memory and building a bad block management table accordingly; recording mappings between bad blocks of an user area in the flash memory and good blocks of the reserved area into the bad block management table; when the bad block management table indicates there is no good block remaining in the reserved area that can be mapped to, selecting one of bad blocks of the reserved area or the user area and obtaining a recollected block after erasing the selected bad block; recording a mapping between the recollected block and a bad block in the user area into the bad block management table; and based on the bad block management table, programming data into the recollected block.

Abstract: An apparatus includes a non-volatile memory media and a storage controller. The storage controller is configured to fetch a storage command from a submission queue of a host. The submission queue has a submission queue identifier (SQID). The storage controller then determines a submission queue fetch error in response to receiving a Transport Layer Packet (TLP) error as a result of fetching the storage command. Next, the storage controller is configured to determine a command identifier (CID) for the storage command associated with the submission queue fetch error. The storage controller then sends a completion message to the host. The completion message uniquely identifies the storage command of the submission queue associated with the submission queue fetch error using the SQID and CID.

Abstract: A processing device in a memory sub-system identifies a first memory device and a second memory device and configures the second memory device with a zone namespace. The processing device identifies a first portion and a second portion of the first memory device, the first portion storing zone namespace metadata corresponding to the zone namespace on the second memory device. The processing device further exposes the second portion of the first memory device to a host system as a non-zoned addressable memory region.

Abstract: An electronic device may include a host device and a storage device which are connected in a universal flash storage standard, wherein the host device may include processing circuitry configured to process a submission queue (SQ) and a completion queue (CQ), wherein the SQ is a processing standby line of a command, and the CQ is a processing standby line of a response received from the storage device, transmit the command to the storage device, store a host command credit in a host command register, the host command credit indicating an estimated command accommodation limit of the storage device, store the response in a response slot, and store a host response credit in a host command register, the host command credit indicating a limit of the response slot.

Abstract: A processing device, operatively coupled with a memory component, is configured to provide a plurality of virtual memory controllers and to provide a plurality of physical functions, wherein each of the plurality of physical functions corresponds to a different one of the plurality of virtual memory controllers. The processing device further presents the plurality of physical functions to a host computing system over a peripheral component interconnect express (PCIe) interface, wherein each of the plurality of physical functions corresponds to a different virtual machine running on the host computing system, and manages input/output (IO) operations received from the host computing systems and directed to the plurality of physical functions, as well as background operations performed on the memory component, in view of class of service parameters associated with the plurality of physical functions.

Abstract: Converting RAID data between persistent storage types, including: for each portion of a RAID shard of a RAID stripe: writing, to a respective plurality of source solid state drives, the portion of the RAID shard; detecting that all portions of the RAID shard have been successfully written; copying, from one of the plurality of source solid state drives to a respective target solid state drive among a plurality of target solid state drives from one of the plurality of source solid state drives, the RAID shard, where the RAID shard is copied from a source solid state drive that is different from where each other RAID shard of the RAID stripe is copied from.

Abstract: Disclosed herein is an apparatus for managing disaggregated memory, which is located in a virtual machine in a physical node. The apparatus is configured to select, depending on the proportion of valid pages, direct transfer between remote memory units or indirect transfer via local memory for each of the memory pages of the source remote memory to be migrated, among at least one remote memory unit used by the virtual machine, to transfer the memory pages of the source remote memory to target remote memory based on the direct transfer or the indirect transfer, and to release the source remote memory.

Abstract: A storage device includes 3D NAND including layers of multi-level cells. Test reads are performed by reading only LSB pages and reading layers in a repeating pattern of reading two and skipping two. A test read of a block is performed when its read count reaches a threshold. The counter threshold is updated according to errors detected during the test read such that the frequency of test reads increases with increase in errors detected. Counter thresholds according to errors may be specified in a table. The table may be selected as corresponding to a range of PEC values including the current PEC count of the 3D NAND. Each table further specifies a number of errors that will result in garbage collection being performed.

Abstract: Devices, systems, and methods are provided that cause a controller to receive a first command to read or write first data from or to a first logical address; and determine a first mapped logical address that the first logical address is mapped to. A first plurality of logical addresses is mapped to the first mapped logical address and includes the first logical address. The controller reads a first data structure at the first mapped logical address. The first data structure includes a pointer to a first intermediate physical address. The controller reads a second data structure at the first intermediate physical address. The second data structure includes a plurality of pointers to target physical addresses. The plurality of pointers includes a pointer to a first target physical address for the first logical address. The controller reads or writes the first data from or to the first target physical address.

Abstract: Disclosed herein are techniques for managing context information for data stored within a non-volatile memory of a computing device. According to some embodiments, the method can include (1) loading, into a volatile memory of the computing device, the context information from the non-volatile memory, where the context information is separated into a plurality of silos, (2) writing transactions into a log stored within the non-volatile memory, and (3) each time a condition is satisfied: (i) identifying a next silo of the plurality of silos to be written into the non-volatile memory, (ii) updating the next silo to reflect the transactions that apply to the next silo, and (iii) writing the next silo into the non-volatile memory. In turn, when an inadvertent shutdown of the computing device occurs, the silos of which the context information is comprised can be sequentially accessed and restored in an efficient manner.

Abstract: An integrated memory assembly comprises a memory die and a control die bonded to the memory die. The memory die includes a memory structure of non-volatile memory cells. The control die is configured to program user data to and read user data from the memory die in response to commands from a memory controller. To utilize space more efficiently on the memory die, the control die compacts fragmented data on the memory die.

Abstract: Methods, systems, and devices for the dynamic selection of cores for processing responses are described. A memory sub-system can receive, from a host system, a read command to retrieve data. The memory sub-system can include a first core and a second core. The first core can process the read command based on receiving the read command. The first core can identify the second core for processing a read response associated with the read command. The first core can issue an internal command to retrieve the data from a memory device of the memory sub-system. The internal command can include an indication of the second core selected to process the read response.

Abstract: A memory system includes a memory device and a memory controller. The memory device includes a plurality of memory cells. The memory controller is configured to manage the memory device using a cell level assignment with respect to a plurality of memory cell levels, determine a cell count for each of the cell levels associated with original data of the memory device that is to be accessed, predict an error rate from the cell counts, and selectively adjust the cell level assignment based on the error rate.

Abstract: A solid state drive having at least one component solid state drive, a spare solid state drive, and a drive aggregator. The drive aggregator has at least one host interface, at least one drive interface connected to the at least one component solid state drive, and an interface connected to the spare solid state drive. The drive aggregator is configured to maintain, in the spare solid state drive, a copy of a dataset that is stored in the component solid state drive. In response to a failure of the component solid state drive, the drive aggregator is configured to substitute a function of the component solid state drive with respect to the dataset with a corresponding function of the spare solid state drive, based on the copy of the dataset maintained in the spare solid state drive.

Abstract: A memory system includes a management-information restoring unit. The management-information restoring unit determines whether a short break has occurred referring to a pre-log or a post-log in a NAND memory. The management-information restoring unit determines that a short break has occurred when the pre-log or the post-log is present in the NAND memory. In that case, the management-information restoring unit determines timing of occurrence of the short break, and, after selecting a pre-log or a post-log used for restoration, performs restoration of the management information reflecting these logs on a snapshot. Thereafter, the management-information restoring unit applies recovery processing to all write-once blocks in the NAND memory, takes the snapshot again, and opens the snapshot and the logs in the past.

Abstract: The present invention provides a memory controller configured to access a plurality of channels, wherein each of the channels includes a plurality flash memory chips, and the memory controller includes a flash translation layer and a plurality of control modules. The flash translation layer is configured to generate commands with corresponding physical addresses of at least one of the channels. The plurality of control modules are connected to the plurality of channels, respectively, and each of the control modules operates independently to receive the corresponding command with the corresponding physical address from the flash translation layer, to access the flash memory chips within the corresponding channels.

Abstract: A method may include storing at least a portion of a metadata buffer of a persistent data structure in volatile memory, and storing at least a portion of a data buffer of the persistent data structure in persistent memory. A system may include a processor, a volatile memory coupled to the processor, and a persistent memory coupled to the processor. The processor may be configured to execute procedures including storing at least a portion of a metadata buffer of a persistent data structure in volatile memory, and storing at least a portion of a data buffer of the persistent data structure in persistent memory. A method may include storing at least a portion of a transient part of a persistent data structure in volatile memory, and storing at least a portion of a persistent part of the persistent data structure in persistent memory.

Abstract: An embodiment of a memory controller device includes technology to control access to a multi-level memory including at least a first level memory and a second level memory, provide direct access to the first level memory based on a system memory address, cache accesses to the second level memory in a second portion of the first level memory, and address a memory space with a total memory capacity which includes a first capacity of the first portion of the first level memory plus a second capacity of the second level memory. Other embodiments are disclosed and claimed.

Abstract: Disclosed is a memory system including a plurality of memory dies configured to store data in various storage modes; and a controller coupled with the plurality of memory dies via a plurality of channels and configured to perform a correlation operation on multiple read requests among a plurality of read requests received from a host so that the plurality of memory dies output plural pieces of data corresponding to the plurality of read requests via the plurality of channels in an interleaving way, wherein the controller is configured to determine whether to perform the correlation operation based on the number of read requests, and perform the correlation operation on the multiple read requests which are related to the same storage mode and different channels.

Abstract: Systems and methods for adapting garbage collection (GC) operations in a memory device to a pattern of host accessing the device are discussed. The host access pattern can be represented by how frequent the device is in idle states free of active host access. An exemplary memory device includes a memory controller to track a count of idle periods during a specified time window, and to adjust an amount of memory space to be freed by a GC operation in accordance with the count of idle periods. The memory controller can also dynamically reallocate a portion of the memory cells between a single level cell (SLC) cache and a multi-level cell (MLC) storage according to the count of idle periods during the specified time window.

Abstract: A flash memory control method, a flash memory storage device and a flash memory controller are provided. The method includes the following. A flash memory module is instructed to perform a data merge operation to copy first data in a first physical unit into at least one second physical unit. After the first data is copied and before the first physical unit is erased, another programming operation is performed on the first physical unit to change a data storage state of at least a part of memory cells in the first physical unit from a first state into a second state. After the first physical unit is programmed, an erase operation is performed on the first physical unit.

Abstract: In an information processing apparatus, a second central processing unit (CICU) uses an alteration detection program stored in a second memory to perform alteration detection on a program to be executed at a time of activation of a first CPU stored in a first memory. In a case where no alteration is detected in the program to be executed at the time of activation, the second CPU activates the first CPU using the program to be executed at the time of activation, and uses the activated first CPU to switch a program to be executed by the second CPU from the alteration detection program stored in the second memory to another processing program stored in the first memory.

Abstract: A method performed by a processor to improve wear-leveling in a cross-point (X3D) memory, comprises detecting, by a processor coupled to the X3D memory, a trigger event, wherein the X3D memory comprises a first section of memory units and a second section of memory units, and in response to detecting the trigger event, relocating, by the processor, data stored in a first memory unit of the first section of memory units to a memory unit adjacent to a last memory unit of the first section of memory units, and relocating, by the processor, data stored in a first memory unit of the second section of memory units to a memory unit adjacent to a last memory unit of the second section of memory units.

Abstract: The present technology relates to an electronic system including a host and a memory system. The host includes a request merge manager configured to generate one or more operation request sets, a first request set queue configured to store one or more of transmission request sets and operation request sets, a first scheduler configured to control the priorities of the operation request sets and the transmission request sets, a second request set queue configured to store the operation request sets sequentially output from the first request set queue, a second scheduler configured to generate a transmission request set, and a request set detector configured to transmit, to the first scheduler, request information on a request set having a highest priority.

Abstract: A processing device in a memory system identifies, while the memory device is in a first state condition, a plurality of workload conditions associated with the memory device, wherein the plurality of workload conditions comprise data reflecting a performance condition of the memory device. The processing device determines, while the memory device is in the first state condition, a host rate of a host system write performance for the memory device based on one or more workload conditions of the plurality of workload conditions. The processing device determines that one or more workload conditions of the plurality of workload conditions satisfies a first threshold criterion. Responsive to determining that the one or more workload conditions of the plurality of workload conditions satisfies the first threshold criterion, the processing device detects a change in a condition of the memory device from the first state to a second state.

Abstract: A system and method employing a distributed hardware architecture, either independently or in cooperation with an attendant data structure, in connection with various data processing strategies and data analytics implementations are disclosed. A compute node may be implemented independent of a host compute system to manage and to execute data processing operations. Additionally, an unique algorithm architecture and processing system and method are also disclosed. Different types of nodes may be implemented, either independently or in cooperation with an attendant data structure, in connection with various data processing strategies and data analytics implementations.

Abstract: A device includes a memory array with first memory cell and second memory cell, and control logic, operatively coupled with the memory array, to cause a first threshold voltage (Vt) state read out of the first memory cell to be converted to a first integer value and a second Vt state read out of the second memory cell to be converted to a second integer value; translate a combination of the first integer value and the second integer value to a set of three logical bits; and output, as a group of logical bits to be returned in response to a read request, the set of three logical bits with a second set of logical bits corresponding to the first Vt state and a third set of logical bits corresponding to the second Vt state.

Abstract: Systems and methods are described for enabling garbage collection on data storage systems. Traditional garbage collection often attempts to track use of data items on an individual level, deleting each item when it is no longer used. In distributed systems, tracking use on an individual level is difficult, and may require centralized knowledge across the system with respect to individual data items. Provided herein is a “coarse-grained” garbage collection mechanism, which divides objects into logical groups referred to as “roots.” Each root has a life cycle. While active, new data can be stored in a root. While inactive, use of data within a root can cause that date to be copied to a different, active root. When the system detects that data hasn't been used in an inactive root for a threshold period, the root can be considered “dead” and data within the root may be deleted.

Abstract: A memory device includes: a memory array used for implementing neural networks (NN); and a controller coupled to the memory array. The controller is configured for: in updating and writing unrewritable data into the memory array in a training phase, marching the unrewritable data into a buffer zone of the memory array; and in updating and writing rewritable data into the memory array in the training phase, marching the rewritable data by skipping the buffer zone.

Abstract: A predictive method for scheduling of the operations is described. The predictive method utilizes data generated from computing an expected lifetime of the individual files or objects within the container. The expected lifetime of individual files or objects can be generated based on machine learning techniques. Operations such as garbage collection are scheduled at an epoch where computational efficiencies are realized for performing the operation.

Abstract: A storage device includes a memory and a memory controller which transmits a command to the memory. The memory includes at least one memory cell array, a memory temperature sensor which measures a temperature of the memory, and a control logic. The control logic outputs a busy signal in response to the command, receives the temperature of the memory from the memory temperature sensor in response to the command, and determines whether to perform a command operation according to the command on the memory cell array based on the received temperature of the memory.

Abstract: A data storage device may include a first memory apparatus including a plurality of data blocks having data classified in units of data blocks; a second memory apparatus in communication with the first memory apparatus to store data cached from the first memory apparatus; and a controller in communication with the first memory apparatus and the second memory apparatus. The controller is configured to perform a caching group based caching operation by controlling the first memory apparatus to cache data from the first memory apparatus to the second memory apparatus on a caching group basis. Each caching group includes a first data block requested for caching and one or more other data blocks having the same write count as a write count of the first data block.

Abstract: An apparatus includes a memory and a controller. The memory may be configured to store data. The controller may be configured to process a plurality of input/output requests to a plurality of blocks of the memory that are not marked as bad on a block list, perform a code rate test that programs the plurality of blocks of the memory at three or more code rates of an error correction code scheme, and mark any of the plurality of blocks identified as bad during the code rate test on the block list.

Abstract: A data storage apparatus may include a storage and a controller. The storage includes a plurality of planes each composed of a plurality of memory blocks, and is divided into a first region and a second region. An original of system data and a copy of the system data are stored in the first region. The controller is configured to perform a relief operation of moving the copy of the system data stored in a source memory block of the first region to a victim plane and switching the source memory block to a region replaceable with the second region.

Abstract: Technologies for performing a quick reliability scan include, for a particular block of a set of blocks of different block types. Each block of the set of blocks includes pages of memory of a physical memory device. A subset of the pages of the block is identified. The block is scanned by scanning the subset of the plurality of pages of the block for a fold condition. A page of the subset of the plurality of pages is determined to have the fold condition. After the set of blocks has been scanned, the folding of the block that includes the page that has been determined to have the fold condition is requested.