Abstract: A heterojunction bipolar transistor has a raised breakdown voltage and restrains the rising characteristic of IC-VCE characteristic from degrading. The collector region includes first, second, and third collector layers of semiconductor. The first collector layer is made of a doped or undoped semiconductor in such a way as to contact the sub-collector region. The second collector layer is made of a doped or undoped semiconductor having a narrower band gap than the first collector layer in such a way as to contact the base region. The third collector layer has a higher doping concentration than the second collector layer in such a way as to be located between or sandwiched by the first collector layer and the second collector layer.

Abstract: A method and device for oxidization of materials in supercritical water. The method involves a) introducing a fluid containing water and an oxidizing agent in a ring-shaped area and through a first end of a substantially tube-shaped reactor comprising an external wall and an internal tube, b) heating the fluid in the ring-shaped area, c) introducing the heated fluid into the internal tube and simultaneously introducing material to be treated into said internal tube at a second end of the reactor, d) mixing the fluid and the material to be treated in a first portion of the internal tube, followed by cooling the obtained mixture in a second portion of the internal tube, and e) isobarically discharging the fluid/oxidized material from the internal tube of the reactor.

Abstract: The invention provides a noncontact measuring system for electrical conductivity, which uses a microwave. In the measuring system for electrical conductivity, the microwave generated in a network analyzer (NA) 110 is guided to a surface of a silicon wafer (sample) 160 through a waveguide 130 and a sensor 140. The surface of the silicon wafer 160 is irradiated with the microwave, and the sensor 140 receives the reflected microwave. The electrical conductivity of the silicon wafer 160 is measured in such a manner that a computer (personal computer) 120 calculates the electrical conductivity from an amplitude ratio A and phase difference ? to a reflected wave of the silicon wafer 160, which is determined with the network analyzer 110. The computer 120 performs not only the calculation of the measurement but also whole control of the measuring system such as positioning of the sample.

Abstract: In a semiconductor device manufacturing apparatus comprising at least a reaction chamber and a substrate holder located within the reaction chamber, a silicon nitride film is deposited on the substrate holder within the reaction chamber, and then, a semiconductor substrate is put on the silicon nitride film of the substrate holder within the reaction chamber. A titanium film or a titanium nitride film is deposited on the semiconductor substrate within the reaction chamber, by a chemical vapor deposition process using a titanium halide as a raw material gas.

Abstract: Projector has projection optical system for projecting an image onto a projection surface and optical zoom mechanism for actuating projection optical system to enlarge and reduce the image projected onto the projection surface. Projector also has distortion correcting circuit for correcting distorted quadrilateral projected images, which are projected onto the projection surface along an optical axis that is oblique vertically and horizontally to the projection surface, into respective square corrected images, zoom setting detector for detecting a zoom setting of optical zoom mechanism, and CPU for generating corrective data to be set in distortion correcting circuit based on the zoom setting detected by zoom setting detector.

Abstract: A method of forming a resist pattern effectively controls the manner/style and the amount of modification of a resist pattern in its reflowing process, realizing a desired resist pattern with a desired accuracy even if the deformation amount of the resist pattern is increased in the reflowing process. A second layer is formed on a first layer and then, a first resist pattern is formed on the second layer. The second layer is selectively etched using the first resist pattern as a mask. Thereafter, wettability of at least part of an exposed area of the second or first layer from the first resist pattern is adjusted, thereby forming a wettability-adjusted part. The first resist pattern is modified in such a way as to extend to the wettability-adjusted area by reflowing the first resist pattern using an organic solvent, thereby forming a second resist pattern for selectively etching the first layer or the second layer.

Abstract: In a scan flip-flop circuit, a first master latch circuit receives usual mode data at a usual data input terminal in synchronization with a first clock signal. A second master latch circuit receives scan-in data at a scan-in data input terminal in synchronization with first and second scan clock signals. A slave latch circuit receives an output signal of the first master latch circuit in synchronization with said first clock signal and the second scan clock signal. The slave latch circuit is constructed by a control circuit for controlling transfer of the usual mode data to the output terminal in synchronization with the second scan clock signal.

Abstract: A washing, cleaning and sterilizing solution is produced by electrolyzing an electrolyte solution composed of mixed caustic soda and salt in an electrolyzer. The solution is used as it is or diluted with tap water or non-potable water. The solution is applicable to washing, cleaning and sterilizing metal goods, medical instruments, nursing products, foodstuff, farm products, marine products, dishes, cooking utensils, plastic goods, surrounding, facilities, fiber products, machine parts, machine goods, various containers, electrical communication components, vehicles, or the like.

Abstract: The invention relates to a photomask for use in a thermal flow process in which: a photomask is prepared in which a plurality of exposure openings are formed; a resist is applied to the surface of a layer of a semiconductor integrated circuit that is to undergo processing; this resist is patterned by an exposure process through the photomask to form a plurality of openings in the resist that correspond to each of the exposure openings; and the patterned resist is then heated to cause each of the openings to shrink; wherein at least a portion of exposure openings among the plurality of exposure openings are formed in shapes that compensate for anisotropic deformation that occurs in the openings when the patterned resist is heated to cause each of the openings to shrink. Since the openings that are formed in the resist are provided in advance with shapes that compensate for the deformation that occurs when the openings shrink, these openings attain the proper shape after undergoing shrinking and deformation.

Abstract: A rubbing device for alignment-treating an alignment layer on a substrate of a liquid crystal display, and the liquid crystal display in which the alignment layer on the substrate is rubbed by using the rubbing device. The rubbing device comprises a rubbing roller having a roller base and a rubbing cloth stuck on the outer surface of the roller base. The rubbing cloth has a plurality of slits formed parallel along the longitudinal direction of the roller base. The rubbing cloth may also comprises a plurality of separate rubbing cloth members which are stuck on the roller base via gaps therebetween and each of which has at least one slit formed parallel along the longitudinal direction of the roller base.

Abstract: In a semiconductor thin film forming system for modifying a predetermined region of a semiconductor thin film by exposing the semiconductor thin film to a projected light patterned through a pattern formed on a photo mask, the system includes a mechanism (opt20?) for uniformizing the light for exposure in a predetermined area on the photo mask. This system can provide a crystallized silicon film having a trap state density less than 1012 cm?2 and can provide a silicon-insulating film interface exhibiting a low interface state density.

Abstract: A method for preparing zinc oxide semiconductor material in which an organometallic compound containing zinc as a metal composition is introduced into a reaction chamber and the zinc-containing organic compound is vaporized to effect a specific decomposition reaction on a substrate, thereby forming a zinc oxide semiconductor material on the substrate. The zinc-containing organic compound employed is one having a low reactivity with oxygen in a vapor phase under the temperature atmosphere in the reaction chamber.

Abstract: A connector for receiving a plug-in card comprises a carrier which defines a receiving space for the plug-in card, at least one guide hole which is formed in the carrier and which opens in the receiving space, a contact element which is movably arranged in the guide hole, a spring which urges the contact element towards the receiving space, and a conductor path which is electrically connected with the contact element.

Abstract: A high-temperature connectorized thermocouple probe assembly for use in land gas turbine environments consistent with the present invention comprises a thermocouple junction having a plurality of conductors, a high temperature connector having at least one conductor, a length of cable having at least one conductor coupling at least one of the conductors of the thermocouple junction with at least one conductor of the high temperature connector; and a bushing disposed around the length of cable. In a further aspect, a land gas turbine system consistent with the present invention comprises a land gas turbine and a thermocouple probe assembly disposed at least partly within the land gas turbine, wherein the thermocouple probe assembly comprises a thermocouple junction and a high temperature connector coupled to the thermocouple junction, and wherein the thermocouple probe assembly is removably connected to, or is adapted for removable connection to, the land gas turbine via the high temperature connector.

Abstract: Addition of juniper berry oil to a malt beverage after completion of the brewing process, in an amount below the threshold where it imparts any perceptible juniper berry flavor to the beverage, mitigates or nullifies bitterness imparted the hops.

Abstract: A semiconductor device having a semiconductor element and a plurality of segments formed by dividing a conductive plate. Some of the segments are electrically coupled with electrodes of said semiconductor element and constitute lead pad portions as mounting electrodes of the semiconductor device. Other segments among the plurality of divided segments constitute die pad portions on which the semiconductor element is mounted. The plurality of divided segments and the semiconductor element are sealed and supported together by a resin material portion. The resin material portion fills the space between the divided segments as the lead pad portions. Semiconductor devices having various package sizes can be fabricated by using standardized common parts.

Abstract: A release agent for bituminous material is disclosed which comprises a mineral oil-free composition containing an aqueous dispersion of a polyalkenamer, preferably a polyoctenamer. The release agent may additionally contain a dispersing agent and at least one fatty acid ester. The release agent also may be used for the cleaning of surfaces such as motor vehicles, road making machines and environmental surfaces contaminated with bituminous material.

Abstract: In a plasma CVD apparatus, a plate formed with a plurality of perforated holes is arranged to separate a plasma generation region and a processing region. The aperture ratio of the perforated holes to the plate is not greater than five percent. Plasma including radicals and excited species is generated from an oxygen (O2) gas in the plasma generation region, then the radicals and excited species flow into the processing region through the perforated holes. A monosilane (SiH4) gas is also supplied into the processing region, but the backward flow of the monosilane gas into the plasma generation region is suppressed by the plate. In the processing region, the radicals and the excited species and the monosilane gas result in a gas phase reaction that yields the silicon dioxide film formed on the substrate or the wafer with high quality.

Abstract: An apparatus for supporting a combined substrate structure, comprising first and second substrates combined, includes: level-adjustable supporting mechanisms for supporting plural supporting points of a bottom surface of the combined substrate structure; a level-detecting system for detecting respective levels of corresponding points of a top surface of the combined substrate structure to the plural supporting points of the bottom surface; and a control system for receiving the detected levels from the level-detecting system and for controlling the plurality of level-adjustable supporting mechanism in respective level-adjustment operations in accordance with the detected levels.