Abstract: The thickness of a liquid crystal layer of a reflection type or semi-transparent type liquid crystal display device and the driving voltage are determined in such a manner that the reflectance of the liquid crystal layer to the blue light component has a maximum value; the values of reflectance to the red, green and blue light components are close to one another in the range lower than the driving voltage; the reflection type or semi-transparent type liquid crystal display device produces a full color image in the driving voltage range where the values of reflectance are close to one another so that the color irregularity and tint irregularity are suppressed.

Abstract: A miniature actuator, e.g., for use in a Micro Air Vehicle, comprises at least one nested array of magnets, with an outer annular magnet with a magnetization pointing in an axial direction, a middle annular magnet with a radial magnetization, and an inner cylindrical magnet with a magnetization directed anti-parallel to the magnetization of the outer annular magnet. In one embodiment, a permanent magnet actuator comprises such an array, and a conductive coil having a current distributed over the volume of the conductive coil, wherein the magnetic field of the array is perpendicular to the current located in the coil. The coil may be located above or below the first magnetic array. In another embodiment, a conductive coil is disposed between two magnetic arrays. The coil may have a winding that is pancake-shaped, solenoidal, or toroidal and may comprise more than one winding.

Abstract: For use in already known plug connections, an electrical contact element is proposed that can be formed as a socket contact or as a pin contact and is provided with a plug region and a terminal end, a sleeve being capable of being screwed onto the terminal end of the contact element. The sleeve has inwardly directed spring arms that enter into a conical bore in the terminal end. Positioned between said spring arms is an electrical conductor, the spring arm tips exerting a force-locking wedge action on the electrical conductor to an ever greater extent, the further the sleeve is screwed onto the terminal end.

Abstract: An optical semiconductor device includes: an insulating base; and a lead structure which further includes: a flange supported on a first surface of the insulating base; at least a first type lead supported by the insulating base; at least an island for mounting at least an optical semiconductor element thereon, which is electrically connected to the at least first type lead; and at least a connection part extending between the at least island and the flange. The flange, the at least connection part, and the at least island comprise a single united part of the lead structure. The flange, the at least connection part, the at least island, and the at least first type lead comprise a same conductive material.

Abstract: An internal combustion engine includes air amplifiers to increase airflow. Air amplification with a high-pressure supply provides a practical way to provide large airflow producing higher rear wheel power. When synchronized to the valve openings the efficiency is enhanced while adding to the system complexity. These additions also apply to an engine with a supercharger of turbocharger. When used in the exhaust path the air amplifiers can also help scavenge exhaust gases from the cylinder for added power.

Abstract: In a gain-controlled amplifier, first, second and third transistors are provided, and a signal at one of input and output terminals is compared with a threshold voltage. When the compared signal is lower than the threshold, the second and third transistors are respectively turned into conducting and non-conducting states, and when the compared signal is higher than the threshold, the situation is in reverse. When the third transistor is non-conducting, the first and second transistors are configured to form a cascode amplifier between the input and output terminals to produce a low-noise, high-gain output signal. When the second transistor is non-conducting, the first and third transistors are configured so that the third transistor forms a base-grounded amplifier between the input and output terminals and the first transistor forms a diode for supplying a DC bias current to the third transistor to produce a low-distortion, low-gain output signal.

Abstract: A voltage controlled oscillator includes N (N is an integer equal to or more than 2) inversion-type differential amplifiers and a level converter. The N (N is an integer equal to or more than 2) inversion-type differential amplifiers are connected in a loop such that each of output signals outputted from one of the N inversion-type differential amplifiers has an opposite polarity to a corresponding one of output signals outputted from the next one of the N inversion-type differential amplifiers. The level converter is connected to one of the N inversion-type differential amplifiers as a last inversion-type differential amplifier to generate an oscillation signal from the output signals outputted from the last inversion-type differential amplifier. Each of the N inversion-type differential amplifiers operates in response to a predetermined voltage and a control voltage.

Abstract: When a content of an on-screen item representing a feature of an application program is changed without user's direct interaction, the present invention provides a visual cue that indicates the content change of the on-screen item to help attracting user's attention to the change.

Abstract: The PDP disclosed herein has a plurality of thin wire electrodes extending in the row direction, which are laid out in such a way as to widen the interval at a fixed ratio (2 times) from the discharge gap section toward the non-discharge gap section as well as to shorten the lengths of those row direction thin wire electrodes in steps with a fixed difference (approximately 20 &mgr;m×left/right) from the cell's vertical center axis toward the partition walls. They are connected by thin wire electrodes that extend in the column direction to form antenna-shaped plane electrodes and the thin wire electrodes that extend in the column direction from the center of the antenna-shaped plane electrodes and the bus electrodes that extend in the row direction are connected to form a sustaining electrode pair (scan electrode and common electrode).

Abstract: A memory module recovery method involves previously storing a defective row address and a defective column address corresponding to a memory cell in a volatile memory determined as defective, and defective device information for discriminating the volatile memory determined as defective in a non-volatile memory, transferring the defective row address, defective column address and defective device information stored in the non-volatile memory to a volatile memory upon start-up of a system for holding the information in the volatile memory, and accessing a redundant memory cell instead of the memory cell determined as defective when receiving an address corresponding to the memory cell determined as defective, based on the defective row address, defective column address and defective device information held in the volatile memory.

Abstract: In a flat panel display device, in which a display panel 1 loosely fitted on a main surface of a chassis 4 and circuit substrates held in hook portions provided on side surfaces of the chassis are connected each other through TCP's by bending the latter TCP's, and a method for manufacturing the same device, a main slit for a rounded portion of each TCP is formed in a rounded portion of the TCP and an auxiliary sub slit is also formed adjacent to the main slit. In order to reduce the peeling force exerted on connecting/fixing portions between the TCP's and the display panel, the circuit substrate is pulled up by bending the main and sub slits and then returning the sub slit to a flat state to insert the circuit substrate into the hook portions.

Abstract: A thin-film transistor is formed by a polycrystalline silicon film having a thin-film part and a thick-film part, the thin-film part minimally being used as a channel part. The polycrystalline silicon film is formed by laser annealing with an energy density that completely melts the thin-film part but does not completely melt the thick-film part. Because large coarse crystal grains growing from the boundary between the thin-film part and the thick-film part form the channel part, it is possible to use a conventional laser annealing apparatus to easily achieve high carrier mobility and low leakage current and the like.

Abstract: A cushion/backrest including an integrated reading lamp tethered at the end of a flexible member is disclosed for providing the user with a source of light for reading or watching television. The cushion may also include built in massage motors for providing the user with a massaging action to the back. Controls for adjusting the massaging action and the reading lamp may be incorporated in an armrest.

Abstract: For an electric hermaphroditic plug-in connector a hermaphroditic contact with a plug-in area and a terminal area is proposed that consists of a solid, single-piece contact part, the plug-in area being formed as an adjacent sleeve and pin contact and a separate, elastic contact element being provided in the sleeve contact.

Abstract: The invention relates to a transmitter-receiver assembly by means of which light signals can be transformed into electric signals (receiver mode), or electric signals into light signals (transmitter mode). Said assembly comprises a component (10) comprising positioning configurations (16), an optical waveguide (17), a first mirror (14) and a second mirror (15), the two mirrors (14, 15) lying in prolongation of the optical waveguide (17), and the second mirror (15), as seen from the optical waveguide (17), lying behind the first mirror (14), as well as to a component (20) having adjustment configurations (23), an optical transmitter (29) and an optical receiver (25), the transmitter (29) and the receiver (25) being arranged next to one another.

Abstract: A method for forming a metal silicide layer in a self-aligned manner on a source region and a drain region and a gate electrode of a semiconductor device formed on a semiconductor substrate, the method comprising the steps of: depositing a cobalt film over an entire surface of the semiconductor device formed on the semiconductor substrate, forming the metal silicide layer on the source region and drain region and the gate electrode by performing a heat treating thereof, and etching away an unreacted cobalt remaining on the semiconductor substrate using an admixture solution made of hydrochloric acid, hydrogen peroxide, and water, having relative concentration ratio ranging from 1:1:5 to 3:1:5, at a solution temperature of 25 to 45° C., with an etching time of 1 to 20 minutes.

Abstract: A high-frequency circuit includes a bias circuit to which a gain control voltage is input and which controls gains of transistors arranged in the bias circuit in accordance with the gain control voltage, and a band-switching circuit which switches a band and through which a reference current runs. The band-switching circuit includes two transistors electrically connected in cascode to each other, one of the two transistors which is located downstream of the other has a gate electrically connected to a gain control voltage terminal through which the gain control voltage is input, and each of the two transistors is comprised of a complete enhancement mode field effect transistor. The bias circuit includes a pair of transistors and a band-switching transistor. The band-switching transistor is electrically connected in series to a line through which the gain control voltage is supplied, and the gain control voltage is applied to the pair of transistors through the band-switching circuit.

Abstract: In an electronic device supplying a DC power to an LSI chip (20), a noise filter (1) of a distributed constant type, having an input port (2, 3) and an output port (5, 4), is mounted on a circuit board (6). The noise filter (1) reduces high-frequency noise incoming thereto and allows DC current to flow therethrough. The input port (2, 3) is connected to a DC power line (7a) and a ground conductor (8a) on the circuit board (6). The output port (5, 4) is connected to a separate power conductor (7b) and a separate ground conductor (8b) which are connected to the LSI (20) mounted on the circuit board (6). In another embodiment, the LSI (20) is mounted on a different circuit board (17) to which the output port (5, 4) is connected through conductor pins (18, 19) standing on the circuit board (6).

Abstract: The invention relates to a method of producing a thin layer of semiconductor material including: a step of implanting ions through a flat face (2) of a semiconductor wafer in order to create a layer of microcavities, the ion dose being within a specific range in order to avoid the formation of blisters on the flat face, a thermal treatment step in order to achieve coalescence of the microcavities a possibly, a step of creating at least one electronic component (5) in the thin layer (6), a separation step of separating the thin layer (6) from the rest (7) of the wafer.

Abstract: An opposite substrate of a reflection-type color liquid crystal display apparatus has a transparent insulation substrate made of glass or the like. An uneven portion is formed on a surface of the opposite substrate on the side of a liquid crystal. A flattened film made of acryl, polyimide or the like is formed to cover the uneven portion of the transparent insulation substrate. A common opposite electrode made of ITO or the like is formed on the flattened film. A liquid crystal orientation layer made of polyimide or the like is formed on the opposite electrode. A light scattering mechanism is constituted of said uneven portion of the transparent insulation substrate and the flattened film.