Abstract: Method to control the lowering movement of the lifting cylinder or cylinders (1, 2) of a truck. When a lowering is to take place the pump (5) is started in the pumping direction for increasing the pressure between the pump and a loadholding valve (3, 4) until essentially the pressure has been achieved as in the hydraulic cylinder (1, 2), whereafter the pump with its motor is switched over to regenerative operation, that is the pump works as motor and the motor as generator. The holding valve (3, 4) is opened so that the oil while driving the pump can flow back through this.

Abstract: A method for controlling reading data that can increase the data transfer rate in an SDRAM of a posted CAS standard. A memory cell array is constituted by two sub-arrays that can be independently activated. When a READ command is received as an input one clock cycle after the input of an ACTV command, a row decoder activates only the sub-array containing the memory cell that is selected by a row address AX and column address AY, and then carries out the operations for reading data. The present invention thus reduces the areas that must be activated, thereby decreasing the load on the power supply and, when amplifying bit lines, shortening the time for the voltage of bit lines to attain the stipulated voltage. Consequently, the present invention increases the speed of reading data.

Abstract: A clock control circuit comprises a control circuit 102 for outputting a control signal for adding or subtracting a phase to a reference clock, which is an input clock or a clock generated from the input clock, on each clock period of the reference clock, and a phase adjustment circuit 101 fed with the input clock and outputting an output clock having the phase adjusted to the reference clock.

Abstract: A semiconductor device is provided with a semiconductor substrate, a gate insulation film formed on the semiconductor substrate, a gate electrode formed on the gate insulation film and having a portion increasing upward in the length along a gate length direction, a side wall formed on a side surface of the gate electrode so as to be covered behind a top part of the gate electrode as seen in plan view, and an interlayer insulation film covering the gate electrode. The side wall is in contact with the interlayer insulation film.

Abstract: A vehicle area detector correctly detects a vehicle area. The vehicle area detector detects a vehicle area in a vehicle candidate area having a high probability of existence of a vehicle in an image produced by imaging means mounted on a vehicle.

Abstract: There is disclosed a flip chip semiconductor integrated circuit, which comprises an internal cell, an I/O buffer as an interface between the internal cell and an external unit, a solder ball, a GND or power supply wire, and an I/O buffer unit arranged on a chip. In this case, the components except the I/O buffer unit are formed in a unit and arranged on the chip, and the I/O buffer unit includes a signal solder ball for transferring signals with the external unit, an I/O buffer having a signal terminal connected to the signal solder ball, a first I/O buffer GND wire connected to a GND terminal of the I/O buffer, and a first I/O buffer power supply wire connected to a power supply terminal of the I/O buffer.

Abstract: A niobium-based superconductor is manufactured by establishing multiple niobium components in a billet of a ductile metal, working the composite billet through a series of reduction steps to form the niobium components into elongated elements, each niobium element having a thickness on the order of 1 to 25 microns, surrounding the billet prior to the last reduction step with a porous confining layer of an acid resistant metal, immersing the confined billet in an acid or a high temperature liquid metal to remove the ductile metal from between the niobium elements while the niobium elements remain confined by said porous layer, exposing the confined mass of niobium elements to a material capable of reacting with Nb to form a superconductor.

Abstract: On a transparent substrate, by use of, for instance, vapor deposition, an Al film is formed. Subsequently, with a DC-bias applied on a surface of the Al film, a first zinc oxide thin film is formed by use of a sputtering method. On a surface of the first zinc oxide thin film, according to an atmospheric MO-CVD method, a second zinc oxide thin film is formed. When the second zinc oxide thin film deposited by use of an MO-CVD method is formed on the first zinc oxide thin film having a-axis orientation, the second zinc oxide thin film becomes to have the a-axis orientation. Since the Al thin film, owing to heat during the deposition by use of the MO-CVD method, is absorbed in the first zinc oxide thin film, the transparency is improved. As a result, a sample having a ZnO/ZnO/Al/glass structure becomes high in the transparency as a whole.

Abstract: A discharge electrode structure of a plasma display panel is described. The discharge electrode structure includes a plurality of expanding electrodes or expanding portions that each one has a symmetric structure. The expanding electrodes are alternately coupled to a pair of conductive electrodes that are on the edge of a plurality of luminant cells in one row. Therefore, oblique symmetric electrodes are disposed at opposite corner location of each luminant cell.

Abstract: A method for absorbing and releasing hydrogen comprises applying repeatedly hydrogen pressurization and depressurization to a hydrogen storage metal alloy of a body-centered cubic structure-type phase exerting a two-stage or inclined plateau characteristic in a hydrogen storage amount vs hydrogen pressure relation in an appropriate fashion to absorb and release hydrogen. At least at one stage during the release of hydrogen, the temperature (T2) of the above-mentioned hydrogen storage metal alloy is made higher than the temperature (T1) of the hydrogen storage metal alloy during the hydrogen absorption process (T2>T1). This enables the release and utilization of occluded hydrogen at a low-pressure plateau region or an inclined plateau lower region.

Abstract: A composition and method of treating severe itching by topically administering a therapeutically effective amount of colloidal sulfur suspended in a pharmaceutically acceptable carrier including a diketone.

Abstract: A charge-collecting circuit is connected between a clamping circuit on the side of the sustain electrodes and a clamping circuit on the side of the scan electrodes so as to be parallel to a capacitance between said sustain electrodes and said scan electrodes. In write-discharge, sustain-discharge, and the like, when a sustain-electrode potential staying at the level of the ground potential with a switch S2 being turned ON is to be increased to the level of the power potential that is the same as the level of a scan-electrode potential staying at the power potential with a switch S5 being turned ON, the switch S2 is first turned OFF, a current is then applied to flow from the scan-electrode to the sustain-electrode side to thereby slowly increase the potential on the side of the sustain electrodes in the charge-collecting circuit. Then, the switch S1 is subsequently turned ON, thereby, the sustain-electrode potential is clamped to the power potential at the same level as that of the scan-electrode potential.

Abstract: A semiconductor integrated circuit including a logic circuit is disclosed, in which the decoder area can be reduced and which has an effect of reduction of the whole chip size. Among the MOS FETs included in the logic circuit, those other than a MOS FET for supplying electric charges via an output terminal have threshold voltage values lower than the threshold voltage value of the MOS FET for supplying electric charges. The direction of the gate width of each MOS FET is perpendicular to the direction along which word lines extend in the memory cell areas, and all of the MOS FETs are aligned in a direction perpendicular to the direction along which the word lines extend.

Abstract: A semiconductor integrated circuit including a logic circuit is disclosed, in which the decoder area can be reduced and which has an effect of reduction of the whole chip size. Among the MOS FETs included in the logic circuit, those other than a MOS FET for supplying electric charges via an output terminal have threshold voltage values lower than the threshold voltage value of the MOS FET for supplying electric charges. The direction of the gate width of each MOS FET is perpendicular to the direction along which word lines extend in the memory cell areas, and all of the MOS FETs are aligned in a direction perpendicular to the direction along which the word lines extend.

Abstract: A semi-transmission type liquid crystal display that maximizes the luminance in reflection mode and transmission mode. The liquid crystal display comprises a lower substrate with thin film transistors, an opposite substrate facing the lower substrate, a liquid crystal layer between the lower substrate and the opposite substrate, a reflection electrode formed in a reflection area of the lower substrate, a transparent electrode formed in a transparent area of the lower substrate, a common electrode formed on the opposite substrate, and a drive circuit for applying a voltage between the reflection electrode and the transparent electrode and the common electrode. The potential difference between a drive voltage applied to that surface of the lower substrate which contacts the liquid crystal layer and a drive voltage applied to that surface of the opposite substrate which contacts the liquid crystal layer is lower in the transparent area than in the reflection area.

Abstract: A liquid crystal display includes an electro-luminescence portion which has electro-luminescence elements and a liquid crystal portion which has liquid crystal layer, scanning electrodes and signal electrodes and controls the transmittance of light emitted by the electro-luminescence elements. First, scanning pulses are applied in sequence to the scanning electrodes. Next, a gradation signal are applied associated with image data to the signal electrodes. Then, the electro-luminescence portion is allowed to emit light of a plurality of colors at the same time in pixels after transmissivity of the liquid crystal layers in the pixels reaches a predetermined value. The pixels are located at the intersections between a scanning electrode to which the scanning pulse is applied and the signal electrodes to which the gradation signal is applied.

Abstract: A method for creating a web-based database application that is data dictionary driven is disclosed. A web site, containing various computer programs, data for a database application and a data dictionary describing both the structure of an application database and the requirements for the database application, creates web pages for facilitating the execution of a database application over the internet. The method comprises the steps of creating, updating and maintaining an on-line data dictionary, and creating and initially populating a database for the application. The various programs at the web site create web pages for the application, update the data dictionary and facilitate modification of the data structure for the application. The data dictionary may be initialized: from electronic data uploaded to the web site; from the data-dictionary records describing an existing web-based application; or directly by the user via a web interface.

Abstract: A gettering layer for capturing heavy metal impurities is formed on a wafer back surface. Immediately before formation of a metal wiring layer, a semiconductor device is subjected to first heat treatment at a predetermined temperature so that the heavy metal impurities are heat-diffused and captured in the gettering layer. The gettering layer with the heavy metal impurities captured therein is removed before second heat treatment following the first heat treatment. After removing the gettering layer, a first amorphous silicon layer as a filler for filling a contact hole is deposited on a wafer device surface including a device active region while a second amorphous silicon layer having an impurity concentration equal to that of the first amorphous silicon layer is simultaneously deposited on the wafer back surface.

Abstract: Many electrical sensing devices include an array of transducer elements for converting external stimuli to electrical indications. Novel technologies to realize improvements in low power consumption, low noise, and analog output path which occupies minimal die area while maintaining certain data rates are disclosed. A two stage pipeline architecture of the invention in the analog output path maintains fast pixel rates with minimal ADC (analog digital converter) arrangement. A novel power supply and the use of differential amplifiers in connection with a black signal level as a reference voltage are also described.