Abstract: Methods are presented for fabrication of alignment features of a desired depth, and shallow trench isolation (STI) features in Silicon-On-Insulator (SOI) material. Specific embodiments require no more than two lithography and etch processes, which represents an improvement over current methodology requiring three lithography and etch processes in order to produce the desired features during manufacture of a semiconductor device.

Abstract: A device and method for manufacturing thereof for a MirrorBit® Flash memory includes providing a semiconductor substrate and successively depositing a first insulating layer, a charge-trapping layer, and a second insulating layer. First and second bitlines are implanted and wordlines are formed before completing the memory. Spacers are formed between the wordlines and an inter-layer dielectric layer is formed over the wordlines. One or more of the second insulating layer, wordlines, spacers, and inter-layer dielectric layers are deuterated, replacing hydrogen bonds with deuterium, thus improving data retention and substantially reducing charge loss.

Abstract: A method for filling narrow isolation trenches during a semiconductor fabrication process is disclosed. The semiconductor includes both high-aspect ratio narrow isolation trenches formed in a core area of a substrate, and wide isolation trenches formed in a circuit area of the substrate. After trench formation, a thick liner oxidation is performed in all of the isolation trenches in which a layer of thermal oxide is grown to a thickness sufficient to completely fill the high-aspect ratio narrow isolation trenches. Subsequent to the liner oxidation, the wide isolation trenches are filled with an isolation dielectric, whereby all of the trenches are uniformly filled with minimal voids.

Abstract: A fuse cell circuit includes a first fuse and a first fuse sense circuit that senses a programming state of the first fuse and supplies an indication thereof. A sense control circuit includes a plurality of reference fuses and a second fuse sense circuit coupled to the reference fuses. The sense control circuit supplies a sense control signal to the fuse cell circuits to cause the fuse cell circuits to sense the programming state of the first fuse when the sense control signal is asserted. The sense control signal is asserted for a time period determined , at least in part, by a resistance value of the reference fuses. The integrated circuit may also include a resistance varying circuit coupled to vary a resistance value of a current path of the reference fuses according to one or more control signals.

Abstract: A thin filmed fully-depleted silicon-on-insulator (SOI) metal oxide semiconductor field defect transistor (MOSFET) utilizes a local insulation structure. The local insulative structure includes a buried silicon dioxide region under the channel region. The MOSFET body thickness is very small and yet silicon available outside of the channel region and buried silicon dioxide region is available for sufficient depths of silicide in the source and drain regions. The buried silicon dioxide region can be formed by a trench isolation technique or a LOCOS technique.

Abstract: The present invention involves a method for fabricating interconnecting lines and vias. According to the invention, copper is grown from a seed layer to substantially fill openings in a two layer structure wherein the two layers are independently either dielectric or resist layers. According to one aspect of the invention, first and second resist layers are formed into a dual damascene structure. Copper is grown by plating from the copper seed layer to form copper features that fill the pattern gaps.

Abstract: A method and apparatus for passing device configuration information to a shared controller. In one embodiment, a host controller may be configured to read configuration from one or more peripheral devices coupled to a serial bus. The peripheral devices may include coder/decoder (codec) circuitry, and may be implemented using a riser card. The host controller may employ one or more of several different techniques in order to read configuration information from the peripheral device. The configuration information at a minimum includes a device identifier, which may identify the vendor and the function of the device. Additional information needed to configure the device to communicate over the peripheral bus may also be obtained with a read of the device, or various lookup mechanisms, such as a lookup table or a tree-like data structure.

Abstract: The present invention relates to a method of manufacturing a silicon-on-insulator substrate, comprising the steps of (1) providing a silicon-on-insulator semiconductor wafer having at least one surface of a silicon film; (2) implanting an inert atom into the at least one surface to form a damaged surface layer including a gettering site on the silicon film and to leave an undamaged region of the silicon film; (3) subjecting the wafer to conditions to getter at least one impurity from the silicon film into the gettering site; and (4) removing the damaged surface layer.

Abstract: Various methods and systems for mapping virtual addresses having more than 32 bits, such as 48 or 64 bits, to physical addresses are disclosed. A processor includes a translation unit that translates or maps a virtual address to a physical address. The translation unit may translate a virtual address to a physical address using either a first or second mapping mechanism (e.g., a first or second plurality of paging tables, with entries respectively having first and second sizes) supporting virtual addresses having at most a first number of bits, such as 32 bits, or a third page mapping mechanism (e.g., a third plurality of page tables) supporting virtual address having more than the first number of bits, such as 48 bits or 64 bits. The translation unit may select the first or second plurality of paging tables depending on the active operating mode of the processor.

Abstract: For fabricating a first device within a core region and a second device within a periphery region, of a semiconductor substrate, disposable spacers having a first width are formed at sidewalls of a first gate stack of the core region and a second gate stack of the periphery region. Drain and source junctions of the second device are formed in the periphery region to the sides of the disposable spacers of the second gate stack. The disposable spacers are removed and permanent spacers having a second width are formed at the sidewalls of the first and second gate stacks, with the second width being less than the first width. Silicide is formed with an exposed portion of a drain bit line junction within the core region after forming the permanent spacers.

Abstract: A test circuit for exposing higher order speed paths. A test circuit includes a clock generation circuit coupled to a test clock control unit. The clock generation circuit is configured to receive an input clock signal and to generate an output clock signal. The test clock control unit is configured to selectively provide a user programmable test vector or a fixed test vector to control the generation of the output clock signal by the clock generation circuit depending upon a state of a first mode select signal.

Abstract: An integrated circuit wafer and a manufacturing process for etching low K spin-on dielectrics such as HSQ in a High Density Plasma etch reactor utilizes roof and wall temperature to improve across-the-wafer uniformity, and a mixture of C4F8 and C2F6 etch gases to eliminate mid via etch stop and to maintain selectivity over underlying etch-stop layers.

Abstract: A method of program verifying a memory cell that includes generating a program verify pulse with stepped portions and programming the memory cell with the program verify pulse.

Abstract: In a first aspect of the invention, branch prediction hardware, comprising logic and interconnect, is configurable via a control line to alter the manner in which the branch prediction is generated. The configuration can be done programmatically in software. Or, the configuration can be done by hardware in response to processor events. Such processor events include the loading of the CS register and changes in the instruction workload. In a second aspect of the invention, related to speculative execution, the directions of a plurality of branches are predicted based partly on resolved branch history information. Tentative branch history information is then stored for each of the predicted branches. When a predicted branch is resolved, the resolved branch history information is updated based on the stored tentative branch history information for the branch most recently resolved. Additionally, the predictions may be partly based on preceding unresolved branch predictions if any are outstanding.

Abstract: A system and method for transferring a data stream between devices having different clock domains. The method initiates a serial data stream between a transmitter and a receiver. The transmitter operates according to a first clock having a first clock rate, and the receiver operates according to a second clock having a second clock rate. A ratio between the second clock rate and the first clock rate is an integer number greater than or equal to one. A first state is provided over a serial line between the transmitter and the receiver One or more start bits are provided over the serial line. The start bits indicate a second state different from the first state. One or more ratio bits are provided over the serial line after the start bit. The ratio bits indicate the ratio between the second clock rate and the first clock rate. The start bits are received. Using a transition between the first state and the second state evident in receiving each of the start bits, the ratio bits are received.

Abstract: A method includes supplying a signal to rotationally drive a conditioning wheel of a conditioning tool. A polishing pad of a polishing tool is conditioned using the rotationally driven conditioning wheel. Changes in the signal driving the conditioning wheel during the conditioning process are monitored. A conditioning effectiveness of the conditioning wheel is determined based on the changes observed in the monitored signal. A system includes a conditioning tool and a controller. The conditioning tool is adapted to condition a polishing pad of a polishing tool. The controller is coupled to at least one of the polishing tool or the conditioning tool. The controller is adapted to supply a signal to rotationally drive a conditioning wheel of the conditioning tool, monitor changes in the signal driving the conditioning wheel during a conditioning process, and determine a conditioning effectiveness of the conditioning wheel based on changes observed in the monitored signal.

Abstract: A Metal Oxide Semiconductor (MOS) transistor and method for improving device scaling comprises a trenched polysilicon gate formed within a trench etched in a semiconductor substrate and further includes a source region a drain region and a channel region. The source and drain region are laterally separated by the trench in which the trenched polysilicon gate is formed and partially extend laterally beneath the bottom surface of the trench. The channel region is formed in the silicon substrate beneath the bottom surface of the trench. In one embodiment the top surface of the trenched polysilicon gate is substantially planar to the substrate surface. In another embodiment the top surface and a portion of the trenched polysilicon gate are disposed above the substrate surface.

Abstract: Multi-level semiconductor devices are formed with reduced parasitic capacitance without sacrificing structural integrity or electromigration performance by removing the inter-layer dielectrics and depositing a metal silicide to line the interconnection system. Embodiments include a semiconductor device comprising a dielectric sealing layer, e.g., silicon nitride, between the substrate and first patterned metal layer, tungsten silicide lining the interconnection system and dielectric protective layers, e.g., a silane derived oxide bottommost protective layer, on the uppermost metallization level.

Abstract: A method of forming a NAND-type flash memory device including forming a stacked gate flash memory structure (346) containing an interpoly dielectric layer (322) for one or more flash memory cells in a core region (305). The method also includes forming a select gate transistor structure (348) having a first gate oxide (322) formed of the interpoly dielectric material and a gate conductor (338) overlying the first gate oxide (322) in the core region (305). A NAND-type flash memory device includes a core region (305) comprising a stacked gate flash memory cell structure (346) and a select gate transistor (348) and a periphery region (314, 315) comprising a low voltage transistor (342) and a high voltage transistor (350).

Abstract: A novel method is provided for in situ monitoring of a film being deposited on a wafer for manufacturing a semiconductor device. The method involves producing an incident beam of radiation directed during a deposition process to a film being deposited on a wafer in a deposition reactor. The Raman scattered radiation resulted from interaction of the incident beam with molecules of the deposited film is detected to produce a Raman spectrum of the deposited film.